Junction Field Effect Transistors (JFETs) Basics - GATE Problems 1. The pinch off voltage for a n-channel JFET is 4 V, when Vos = 1 V, the pinch — off occurs for Vps equal to @3Vv @4v (b)S V @i1v [GATE 1987: 2 Marks] Soln. Pinch — off voltage (Vp) and Vos (off) are defined as: Pinch off voltage (Vr):- It is the value of Vos at which Ip levels with ve v. Ves (off):- Value of Vos that completely pinches — off the current to zero. Magnitude of the two is same i.e. Wes COff)I = Vel When Ves = 0,[p saturates at Ipss and characteristic shows Vr. When external bias is applied gate channel still requires — Ve to achieve pinch — off. So the relation modifies to WWesl = Wel — West Where Vos on LHS is the new Vp for the applied bias. In this problem, Vp=4V &VGs=1V So, os! = \Vpl — IVes! Wps| =4-1=3V Option (a) 2. Inan n— channel JFET, Vos is held constant. Vps is less than the breakdown voltage. As Vos is increased (a) Condueting cross — sectional area of the channel ‘S’ and the channel current density ‘I’ both increaseSoln. Solin. (b)‘S’ decrease and ‘J’ decreases (c) ‘8’ decrease and ‘J’ increases (d)‘S’ increases and ‘I’ decreases [GATE 1988: 2 Marks] Given, ve is held constant and Vps is less than breakdown voltage. Now Vps is increased, so depletion width increases, thus cross sectional area of the channel decreases, We know, rt Current density J) = 4 = 5 So, as ‘S’ decreases current density will increase Option (c) The ‘Pinch — off voltage of a JFET is 5.0 volts. Its ‘cut - off voltage is, (a) (5.0) V (c)5.0V (b)2.5V (6.0)? V [GATE 1990; 2 Marks} Given, Pinch — off voltage (Vr) =5 V We know Wes (Off) = Vel So cut —off voltage = 5 V Option (c) Which of the following effects can be caused by a rise in the temperature? (a) Inerease in MOSFET current (Ips) (b) Increase in BIT current (Ic) (c) Decrease in MOSFET current (Ips) (@)Decrease in BIT current (Ic) [GATE 1990: 2 Marks]Soin. Soln. For BJT Collector current is given by Tc = Bly + (1+ B) Ico As temperature increases, Ico increases, so the current Ic increases in BJT with rice in temperature. Mobility decreases as the temperature is increa So, in MOSFET, the current (Ips) decreases with temperature. As temperature increases Ins decreases Options (b) and (c) Ann—channel JFET has pinch — off voltage Vy = —5 V,Vps(max) = 20 V,and gm = 2mA/V. The min ‘ON’ resistance is achieved in the JFET for (a) Ves = -7 V and Vps = OV. (b)Ves = OV and Vps = OV (©)Ves = OV and Vps = 20V (Ves = -7 V and Vps = 20V [GATE 1992: 2 Marks] For n-channel JEET, the minimum ‘ON’ resistance is obtained when Vos is positive and large and Vps is very small, ideally Vos =0V Since there is no option for Ves positive, so Vas Option (b) The transit time of the current carries through the channel of a FET decides its characteristic (a) Source (c) GATE (b)Drain (d)Souree and drain IGA 1994: 1 Mark]Soln. The transit time of current carriers through the channel of a JFET will decide its drain characteristics Option (b) 7. Ina JFET List -1 A. The pinch — off voltage decreases B. The transconductance increases C. The transit time of the carriers in the channel List - 11 1. The channel doping is reduced 2. The channel length is increased 3. The conductivity of the channel is increased 4 5 reduced . The channel length is reduced . The GATE area is reduced [GATE 1995: 2 Marks] Soln. A. Pinch off voltage (Vr) is given by 2, = 4@'Na Vp = "Se So, as doping is reduced Pinch off voltage decreases B. — Transconductance (gn) is given by Ip Ves im. Thus, transconductance increases as drain current increases conductivity of the channel is increased. If the channel length is reduced then the transit time of the carriers in the channel is reduced Thus, the option isA-1,B-3,C-4 Option (a) 8. Ann—channel JFET has Ipsss = 2 mA and V, = —4V. It’s transconductance gm (in mA/V), An applied GATE to source voltage Vos of - 2V is (@)0.25 (©)0.75 (b)0.5 @10 [GATE 1999: 2 Marks] Soln. Given, n channel JFET Ips =2mA Vos =-2V The expression for gm is given as =2loss|, Yes 9m Wel U~ Vp. _2x2x | Im Tl = 0.5 mA/V Option (b)