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Microstrip Antennas Overview PDF
Microstrip Antennas Overview PDF
David R. Jackson
Dept. of ECE
University of Houston
Overview of Microstrip Antennas
Also called patch antennas
Microstrip Antenna Integrated into a System: HIC Antenna Base-Station for 28-43 GHz
L x
h
x
L
Advantages of Microstrip Antennas
Hence E z Ez ( x, y )
E z ( x, y )
h
Thin Substrate Approximation
Magnetic field inside patch cavity:
1
H = E
j
( zE z ( x, y ) )
1
=
j
=
1
j
( z Ez ( x, y ) )
Hence
H ( x, y ) =
j
(
1
z E ( x, y ) )
z
Thin Substrate Approximation (cont.)
H ( x, y ) =
1
j
( z E ( x, y ) )
z
E z ( x, y )
h
H ( x, y )
Magnetic Wall Approximation
On edges of patch, y
J s n = 0 Js
W n
Also, on lower surface of t
patch conductor we have x
J s = ( z H ) L
Js
n
Hence, h
Ht = 0
Magnetic Wall Approximation (cont.)
y
Since the magnetic field is
approximately independent of z,
we have an approximate PMC
Js
condition on the edge. W t n
x
H t = 0 (PMC) L
n
h
PMC
Magnetic Wall Approximation (cont.)
n H ( x, y ) = 0 y
H ( x, y ) =
1
j
( z E ( x, y ) )
z
Js
W t n
Hence,
x
n ( z Ez ( x, y ) ) = 0 L
z ( n Ez ( x, y ) ) = 0
n
h
Ez
=0
n PMC
Resonance Frequencies
y
Ez + k Ez = 0
2 2
m 2 n 2
+ k Ez = 0
2
L W
m 2 n 2
+k =0
2
Hence
L W
Resonance Frequencies (cont.)
y
m n
2 2
k =
2
+
L W (x0, y0)
W
Recall that
k = 0 0 r x
L
= 2 f
Hence
m n
2 2
c
f = + c = 1/ 0 0
2 r L W
Resonance Frequencies (cont.)
y
Hence f = f mn
(x0, y0)
W
(resonance frequency of
(m, n) mode)
x
L
m n
2 2
c
f mn = +
2 r L W
(1,0) Mode
y
current
This mode is usually used because the
radiation pattern has a broadside beam.
W
x
=
Ez cos
L x
L
c1
f10 =
2 r L This mode acts as a wide
microstrip line (width W)
that has a resonant length
1 x of 0.5 guided wavelengths
J s = x sin
j 0 L L in the x direction.
Basic Properties of Microstrip Antennas
Resonance Frequency
The resonance frequency is controlled by the patch
length L and the substrate permittivity.
Approximately,
Note: this is equivalent to saying that
c 1 the length L is one-half of a
f10 = wavelength in the dielectric:
r
2 L
0 / 2
kL = L = d / 2 =
r
Note: a higher substrate permittivity allows for a smaller
antenna (miniaturization) but lower bandwidth.
Resonance Frequency (cont.)
The calculation can be improved by adding a
fringing length extension L to each edge of the
patch to get an effective length Le .
y
Le = L + 2L
L L
c 1
f10 = L
2 r Le x
Le
Resonance Frequency (cont.)
Hammerstad formula:
eff W
( r + 0.3) h + 0.264
L / h = 0.412
eff 0.258 W + 0.8
( r ) h
1/ 2
r +1 r 1 h
eff
r = + 1 + 12
2 2 W
Resonance Frequency (cont.)
Note: L 0.5 h
1
NORMALIZED FREQUENCY Hammerstad
Measured
0.95
0.9
0.85
0.8
0.75
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07
h / 0
W = 1.5 L is typical.
Basic Properties of Microstrip Antennas
30
25
r = 10.8
BANDWIDTH (%)
20
15
10
5 2.2
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
h / 0
The discrete data points are measured values. The solid curves are
from a CAD formula.
r = 2.2 or 10.8 W/ L = 1.5
Basic Properties of Microstrip Antennas
Resonant Input Resistance
The resonant input resistance is almost independent
of the substrate thickness h.
The resonant input resistance is proportional to r.
The resonant input resistance is directly controlled by
the location of the fed point. (maximum at edges x = 0
or x = L, zero at center of patch.
(x0, y0)
W
L L
Resonant Input Resistance (cont.)
(x0, y0)
W
x
L
Resonant Input Resistance (cont.)
For a given mode, it can be shown that the resonant input
resistance is proportional to the square of the cavity-mode
field at the feed point.
Rin Ez2 ( x0 , y0 )
y
(x0, y0)
For (1,0) mode:
W
x0
Rin cos 2
L x
L
Resonant Input Resistance (cont.)
Hence, for (1,0) mode:
y
x0
Rin = Redge cos
2
L (x0, y0)
W
150 formula.
r = 10.8
100
2.2
50
y
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08
h / 0 (x0, y0)
W
r = 2.2 or 10.8
W/L = 1.5 x0 = L/4, y0 = W/2 x
L
Basic Properties of Microstrip Antennas
Radiation Efficiency
Radiation efficiency is the ratio of power radiated
into space, to the total input power.
Pr
er =
Ptot
TM0
surface wave
x
cos () pattern
Radiation Efficiency (cont.)
Hence,
Pr Pr
er = =
Ptot Pr + ( Pc + Pd + Psw )
100
2.2
80
EFFICIENCY (%)
60
10.8
40
exact
CAD
20
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
h / 0
r = 2.2 or 10.8 W/L = 1.5 Note: CAD plot uses Pozar formulas
Results: accounting for all losses
100
2.2
80
EFFICIENCY (%)
exact
60
CAD
r = 10.8
40
20
0
0 0.02 0.04 0.06 0.08 0.1
h / 0
r = 2.2 or 10.8 W/L = 1.5 Note: CAD plot uses Pozar formulas
Basic Properties of Microstrip Antenna
Radiation Patterns
The E-plane pattern is typically broader than the H-
plane pattern.
The truncation of the ground plane will cause edge
diffraction, which tends to degrade the pattern by
introducing:
rippling in the forward direction
back-radiation
30 -30
-10
60 -20 -60
-30
120 240
150 210
180
Radiation Patterns (cont.)
H-plane pattern
45 -10 -45
-20
-30
135 225
180
Basic Properties of Microstrip Antennas
Directivity
The directivity is fairly insensitive to the substrate
thickness.
The directivity is higher for lower permittivity, because
the patch is larger.
Results: Directivity
10
r = 2.2
8
DIRECTIVITY (dB)
10.8
6
4
exact
CAD
2
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
h / 0
L
Lp
Zin R C
Approximate CAD Model (cont.)
R
Z in j Lp +
1 + j 2Q ( f / f 0 1)
R 1
Q= BW = BW is defined here by
0 L 2Q SWR < 2.0.
1
0 = 2 f 0 =
LC
L
Lp
R C
Approximate CAD Model (cont.)
R = Rin max
L
Lp
R C
Results : input resistance vs. frequency
80
70
60
CAD
50 exact
Rin ( )
40
frequency where the
30 input resistance is
20
maximum
10
0
4 4.5 5 5.5 6
FREQUENCY (GHz)
60
CAD
exact
40
Xin ( )
20
-40
4 4.5 5 5.5 6
FREQUENCY (GHz)
frequency where the
input impedance is real
0 2
Xf = ( k0 h ) + ln
2 r ( k 0 a )
X f = Lp
0 = 0 / 0 = 376.73
Approximate CAD Model (cont.)
0 2
Xf = ( k0 h) + ln
2 ( k
r 0 a )
Results: probe reactance (Xf =Xp= Lp)
40
35 r = 2.2
CAD
exact
30
W/L = 1.5
25
Xf ( )
20 h = 0.0254 0
15
a = 0.5 mm
10
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Xr
where
1
3
1 3
= 2 ( k0 h ) 60 c1 1
3
Pswhed
0 r
Hence we have
1
ehed
r = 3
3 1 1
1 + ( k0 h ) 1
4 c1 r
1 2/5
c1 = 1 +
r r2
a2 3 1
p = 1 + ( k 0 W ) + ( a2 + 2 a 4 ) ( k0 W ) + c2 ( k0 L )
2 2 4 2
10 560 5
1
+ a2 c2 ( k0 W ) ( k0 L )
2 2
70
c2 = 0.0914153
a2 = 0.16605
a4 = 0.00761
CAD Formula: Radiation Efficiency (cont.)
Improved formula (due to Pozar)
1
e hed
=
2 ( 0 ) (
c1 )
r 1
Pswhed
2
P hed
= k h 80 2
1 + hed sp
0
Psp
r ( x 1)
3/ 2
k 2 2
=
hed 0
P 0 0
4 r (1 + x1 ) + (k0 h) x02 1 (1 + r2 x1 )
sw
x02 1 r2 + 01 + r r2 2 01 + 02
x1 = x0 = 1 +
r x02 r2 12
CAD Formula: Radiation Efficiency (cont.)
Improved formula (cont.)
0 = s tan ( k0 h ) s
1
1 = tan ( k0 h ) s +
( k0 h ) s
s cos ( k0 h ) s
2
s = r 1
CAD Formula: Bandwidth
1 Rs 1 16 p c1 h W 1
BW = d + +
0 h / 0 3 r 0 L hed
er
2
f 2 f1
BW = (multiply by 100 if you want to get %)
f0
CAD Formula: Resonant Input Resistance
(probe-feed)
x0
R = Redge cos
2
L
4 L h
(0 )
W
0
Redge =
Rs 1 16 p c1 W h 1
d + + hed
0 h / 0 3
r L
0 er
CAD Formula: Directivity
3 r
D= ( ( k1h ) )
2
tanc
pc1 r + tan ( k1h )
2
where
tanc ( x ) tan ( x ) / x
CAD Formula: Directivity (cont.)
3
D
p c1
x W E-plane
J s = x cos x
L
The probe is on the x axis.
L
CAD Formula: Radiation Patterns (cont.)
The far-field pattern can be determined by reciprocity.
ky W kx L
sin cos
WL 2 2
Ei (r , , ) = Ei ( r , , )
hex
2 ky W 2 k L 2
x
i = or 2 2 2
k x = k0 sin cos
k y = k0 sin sin
j 0 jk0 r
where E0 = e
4 r
2 tan ( k0 h N ( ) )
F ( ) = 1 + TE
( ) =
tan ( k0 h N ( ) ) j N ( ) sec
2 tan ( k0 h N ( ) ) cos
G ( ) = cos (1 + TM
( ) ) = r
tan ( k0 h N ( ) ) j cos
N ( )
N ( ) = r sin 2 ( )
Circular Polarization
y y
L L
L x L x
y
Phase shift realized with delay line L
P
L
P+g/4 LHCP
Circular Polarization: Dual Feed
Phase shift realized with 90o hybrid (branchline coupler)
Z0 / 2 Z0
L
Z0
feed
g/4 Z0
50 Ohm load L
g/4
x LHCP
Circular Polarization: Synchronous Rotation
Elements are rotated in space and fed with phase shifts
-180o
-90o
-270o
0o
a
x
h
Circular Patch: Resonance Frequency
Ez
=0 J m ( ka ) = 0
=a
Circular Patch: Resonance Frequency (cont.)
ka = xmn
a PMC
(nth root of Jm Bessel function)
c
f mn =
xmn
2 r
c
f11 = x11 x11 1.842
2 a r
Circular Patch: Resonance Frequency (cont.)
Long/Shen Formula :
2h a h a
ae = a 1 + 2h + a = +
r 2h
ln 1.7726 or ln 1.7726
a r
Circular Patch: Patterns
(based on magnetic current model)
2a x
h r k = k 0 r
infinite GP and substrate
H-plane
In patch cavity:
J1 (k ) 1
E z ( ,) = cos
J1 (ka ) h
(The edge voltage has a maximum of one volt.)
Circular Patch: Patterns (cont.)
E0
ER (r, ,) = 2a tanc (k z1h) cos J '1 ( k0 a sin ) Q ( )
0
E0 J1 (k0 a sin )
E ( r,,) = 2a
R
tanc (k z1h) sin P ( )
0 k0 a sin
where
tanc ( x ) = tan ( x ) / x
2 jN ( )
P ( ) = cos (1 ( )) = cos
TE
tan ( k 0 hN ( )) jN ( ) sec
2 j r cos
N ( )
Q ( ) = 1 ( ) =
TM
tan (k0 h N ( )) j r cos
N ( )
N ( ) = r sin 2 ( )
Circular Patch: Input Resistance
J12 ( k 0 )
Rin Redge 2
J1 ( ka )
Circular Patch: Input Resistance (cont.)
1
Redge = er
2 Psp
er = radiation efficiency
where
/2
( k0 a ) tanc2 ( k0 hN ( ) )
2
Psp =
80 0
Q ( ) J1 ( k0 a sin ) + P ( ) J inc
2 2 2 2
( k0 a sin ) sin d
J inc ( x ) = J1 ( x ) / x
CAD Formula:
Psp = ( k0 a ) 2 I c
80
6 e0 = 1
pc = ( k0 a ) e2 k
4 2k
I c = pc e2 = 0.400000
3 k =0
e4 = 0.0785710
e6 = 7.27509 103
e8 = 3.81786 104
e10 = 1.09839 105
e12 = 1.47731 107
Feeding Methods
Advantages:
simple
easy to obtain input match
x0
R = Redge cos
2
L
Disadvantages:
difficult to obtain input match for thicker substrates,
due to probe inductance.
significant probe radiation for thicker substrates
Feeding Methods: Inset-Feed
Advantages:
simple
allows for planar feeding
easy to obtain input match
Disadvantages:
significant line radiation for thicker substrates
for deep notches, pattern may shown distortion.
Feeding Methods: Proximity (EMC) Coupling
Advantages:
allows for planar feeding
less line radiation compared
to microstrip feed patch
microstrip line
Disadvantages:
requires multilayer fabrication
alignment is important for input match
Feeding Methods: Aperture Coupled Patch (ACP)
Advantages:
allows for planar feeding
feed radiation is isolated from patch radiation
higher bandwidth, since probe inductance
problem restriction is eliminated and a
double-resonance can be created.
allows for use of different substrates to
optimize antenna and feed-circuit
performance patch
Disadvantages: slot
requires multilayer fabrication
microstrip line
alignment is important for input match
Improving Bandwidth
L-shaped probe:
foam
microstrip
substrate
microstrip line slot
Improving Bandwidth: Stacked Patches
Bandwidth increase is due to thick low-permittivity antenna
substrates and a dual or triple-tuned resonance.
Bandwidths of 25% have been achieved using a probe feed.
Bandwidths of 100% have been achieved using an ACP feed.
microstrip line
slot
Improving Bandwidth: Stacked Patches (cont.)
-5
-10
-30
-35
-40
3 4 5 6 7 8 9 10 11 12
Frequency (GHz)
stacked patch with ACP feed
Single Layer Single Patch Wideband Microstrip Antenna, T. Huynh and K. F. Lee,
Electronics Letters, Vol. 31, No. 16, pp. 1310-1312, 1986.
Improving Bandwidth: Double U-Slot
General Principle:
low-band
low-band
high-band
High Permittivity
Quarter-Wave Patch
PIFA
Capacitive Loading
Slots
Meandering
r = 1
r = 4
W E-plane W=W/2
L=L/2
L
short-circuit
Ez = 0 vias
W E-plane W E-plane
L L=L/2
side view
side view
The capacitive loading allows for the length of the PIFA to be reduced.
Miniaturization: Slotted Patch
top view
0o 90o
linear CP
The slot forces the current to flow through a longer path, increasing
the effective dimensions of the patch.
Miniaturization: Meandering
via
via
feed feed
30 -30 30 -30
-10 -10
-30 -30
180 180
conventional
conventional RSW
RSW
RSW: Mutual Coupling
space-wave radiation
lateral radiation
surface waves
RSW: Mutual Coupling (cont.)
Reducing surface-wave excitation and lateral radiation reduces mutual coupling.
0
RSW - Measured
-10
RSW - Theory
-20 Conv - Measured
-30 Conv - Theory
-40
S12 [dB]
-50
-60
-70
-80
-90
-100
0 1 2 3 4 5 6 7 8 9 10
Separation [Wavelengths]