You are on page 1of 65

I HC QUC GIA H NI

TRNG I HC CNG NGH

BI VIT CHUNG

T TRNG CA VI CU TRC T VI
BIN THIN T TRNG LN

LUN VN THAC SI VT LIU VA LINH KIN NANO

H NI - 2016
I HC QUC GIA H NI
TRNG I HC CNG NGH

BI VIT CHUNG

T TRNG CA VI CU TRC T VI
BIN THIN T TRNG LN

Chuyn ngnh:Vt liu v linh kin nano


M s: Chuyn nghnh o to th im

LUN VN THAC SI VT LIU VA LINH KIN NANO

Cn b hng dn: PGS. TS. Phm c Thng

H NI - 2016
LI CM N

Trc ht, ti xin by t lng knh trng v bit n su sc bi s hng


dn tn tnh ca PGS. TS. Phm c Thng. Thy to iu kin cho mi hot
ng nghin cu ca ti trong qu trnh thc hin lun vn. Ti xin c chn
thnh cm n ThS. L Vit Cng gip v c cc trao i nhit tnh, xin
c cm n CN. Nguyn Don Thnh, TS. Bi nh T v cc ng nghip
cng tc ti Khoa Vt l k thut v Cng ngh nano, trng i hc Cng ngh
(i hc Quc gia H Ni) ng vin v h tr ti trong thi gian qua.

Ti cng xin gi li cm n ti Ban lnh o v cc ng nghip ti


trng THCS Nhn Chnh, phng Nhn Chnh, qun Thanh Xun, H Ni ni
ti cng tc.

Lun vn c hoan thanh vi s h tr mt phn t ti 103.02-


2015.80 ca Qu pht trin Khoa hc v Cng ngh Quc gia.

Sau cng, ti mun gi tnh cm yu thng nht v s bit n ti b, m,


cng nh tt c nhng ngi thn trong gia nh v bn b lun c v, ng
vin ti vt qua kh khn, hon thnh tt ni dung nghin cu trong bn
lun vn ny.

H Ni, ngy 11 thng 11 nm 2016

Bi Vit Chung
LI CAM OAN

Ti xin cam oan lun vn ny l kt qu nghin cu ca ti thc hin.


Cc kt qu nghin cu ca lun vn l trung thc, cc ti liu tham kho c
trch dn y .

H Ni, ngy 11 thng 11 nm 2016


Hc vin

Bi Vit Chung
DANH MC HNH NH

Hnh 1. 1. ng cong t tr M(H) ca vt liu st t vi lc khng t


HC, t d MR, t bo ha MS. 9
Hnh 1. 2. ng cong t tr ca vt liu t mm v vt liu t cng. 10
Hnh 2. 1. T trng do dng in trn bn knh R sinh ra ti im P bt
k. 13
Hnh 2. 2. T trng do cun dy sinh ra ti im P bt k. 16
Hnh 2. 3. Nam chm hnh tr c t d vi n m-men t lng cc
(a) v cc dng in tng ng (b). 17
Hnh 2. 4. Nam chm hnh tr vi v s phn t t (a) v s tnh ton
t th do mt phn t t sinh ra ti im P (0; 0; z) (b). 20
Hnh 2. 5. Giao din m-un thit k (a) v giao din m-un tnh ton
(b) ca phn mm MacMMems. 22
Hnh 2. 6. Giao din ca phn mm m phng Ansys Maxwell. 23
Hnh 3. 1. Cu hnh 11 nam chm tr v v tr tnh ton t trng, s
bin thin t trng. 26
Hnh 3. 2. T trng thnh phn Bz c m phng dc theo cc ng
qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau. 27
Hnh 3. 3. S bin thin ca thnh phn t trng Bz theo y (dBz/dy) c
m phng dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc
nhau. 30
Hnh 3. 4. S bin thin ca thnh phn t trng Bz theo z (dBz/dz) c
m phng dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc
nhau. 31
Hnh 3. 5. Cu hnh 22 nam chm v v tr tnh ton t trng, s bin
thin t trng. 32
Hnh 3. 6. T trng thnh phn Bz c m phng dc theo cc ng
qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau. 34
Hnh 3. 7. S bin thin ca thnh phn t trng Bz theo y (dBz/dy) c
m phng dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc
nhau. 35
Hnh 3. 8. S bin thin ca thnh phn t trng Bz theo z (dBz/dz) c
m phng dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc
nhau. 36
Hnh 3. 9. Cu hnh 33 nam chm v v tr tnh ton t trng, s bin
thin t trng. 37
Hnh 3. 10. T trng thnh phn Bz c m phng dc theo cc ng
qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau. 38
Hnh 3. 11. S bin thin ca thnh phn t trng Bz theo y (dBz/dy)
c m phng dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d
khc nhau. 39
Hnh 3. 12. S bin thin ca thnh phn t trng Bz theo z (dBz/dz)
c m phng dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d
khc nhau. 40
Hnh 3. 13. Cu hnh 44 (a) v 55 (b) nam chm v v tr tnh ton t
trng, s bin thin t trng. 41
Hnh 3. 14. T trng thnh phn Bz c m phng dc theo cc ng
qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau. 42
Hnh 3. 15. S bin thin ca thnh phn t trng Bz theo y (dBz/dy)
c m phng dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d
khc nhau. 43
Hnh 3. 16. S bin thin ca thnh phn t trng Bz theo z (dBz/dz)
c m phng dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d
khc nhau. 44
Hnh 3. 17. T trng thnh phn Bz c m phng dc theo cc ng
qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau. 45
Hnh 3. 18. S bin thin ca thnh phn t trng Bz theo y (dBz/dy)
c m phng dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d
khc nhau. 46
Hnh 3. 19. S bin thin ca thnh phn t trng Bz theo z (dBz/dz)
c m phng dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d
khc nhau. 47
Hnh 3. 20. Cu hnh 11 nam chm v cc v tr kho st t trng bng
phn mm Ansys Maxwell. 48
Hnh 3. 21. Thnh phn t trng Bz c m phng ti cc im nm
trn trc nam chm cch mt trn nam chm mt khong d (a), ti cc im nm
trn ng thng qua mp nam chm v song song vi trc nam chm cch mt
trn nam chm mt khong d (b), ti cc im nm trn ng thng song song
vi trc nam chm v cch trc nam chm mt khong 2R (c). 49
Hnh 3. 22. Khng gian t trng ngay st b mt cc nam chm (a), mt
mt ct ca khng gian t trng dc theo khong cch d t b mt nam chm
(b). 53
MC LC

M U 3
CHNG 1. TNG QUAN 4
1.1. T trng v cc i lng c bn 4
1.2. Cc phng trnh c bn ca t trng tnh 4
1.3. Phn loi mt s vt liu t 6
1.3.1. Vt liu nghch t 7
1.3.2. Vt liu thun t 7
1.4. ng cong t tr 8
1.5. Mc tiu ca lun vn 11
CHNG 2. M HNH L THUYT V PHN MM M PHNG 13
2.1. M hnh l thuyt 13
2.1.1. M hnh dng tng ng 13
2.1.2. M hnh t tch 18
2.2. Phn mm m phng 21
2.2.1. Phn mm MacMMems 22
2.2.2. Phn mm Ansys Maxwell 23
CHNG 3. KT QU V THO LUN 25
3.1. Kt qu kho st t trng bng phn mm MacMMems 25
3.1.1. Cu hnh 11 nam chm 25

3.1.2. Cu hnh 22 nam chm 32

3.1.3. Cu hnh 33 nam chm 37

3.1.4. Cu hnh 44 v 55 nam chm 41


a) Cu hnh 44 nam chm 41
b) Cu hnh 55 nam chm 45

8
3.2. So snh t trng v s bin thin t trng b mt ca mt s cu hnh
nam chm m phng c bng cc phn mm m phng v tnh ton l
thuyt 48
3.2.1. Cu hnh 11 nam chm 48
3.2.2. Cu hnh 22 nam chm 52
KT LUN 55
TI LIU THAM KHO 56

9
M U

Nam chm v t trng l nhng thnh phn quan trng trong nhiu thit
b k thut. Ngy nay, nam chm c s dng trong nhiu ng c t, cc
u c v ghi thng tin trong lnh vc my tnh. Vi s pht trin ca cng
ngh nano, nhu cu v cc nam chm mnh v to ra c t trng khng ng
nht (bin thin) ln trong khng gian nh hn ngy cng nhiu.
Cho n nay vic phn tch cc i tng t tnh v phi t tnh cng nh
cc truyn ng s dng lc t thng thng s dng t trng c to ra bi
cc cun solenoid, cc nam chm in v cc nam chm siu dn. Gn y, mt
s nhm nghin cu thnh cng trong vic s dng cc nam chm vnh cu
to ra t trng ln thay th cc nam chm truyn thng. T trng ln ny
c to ra ph hp vi c im d hng t mnh ca cc vt liu c s
dng lm nam chm vnh cu, thng l hp cht ca vt liu t him v
kim loi chuyn tip. Tuy nhin, t trng ng nht khng phi l thun li v
cc phn tch s dng t tnh i hi ngun t trng c cng ln v bin
thin mnh. Bi v lc t tc dng ln cc i tng t l thun vi cm t
ca i tng, cm ng t v bin thin ca cm ng t. C th, mt phn t
(i tng) t tnh khi c t trong mt mi trng t khng ng nht s
chu tc dng ca lc t cho bi cng thc sau:

vi V l th tch ca phn t t, l s chnh lch thm t ca phn t t


(p) v mi trng (m), B l ln ca t trng.
Ty thuc vo gi tr ca m phn t t s chu tc dng ca lc ht
hay lc y do t trng tc ng. Nu > 0 th cc phn t s chu tc ng
ca lc ht v b ht v nhng v tr c lc ht mnh nht (thng l cc cnh
ca nam chm), trong khi cc phn t s b y ra xa khi ngun t trng ti
nhng v tr c lc y nh nht nu < 0.
Ngoi ra, khi trong dung dch v c nh ln cc cu trc t, cc phn
t cn chu tc ng ca cc lc khc nh: trng lc (Fg), lc y Archimedes
(FA), lc ko ca dng cht lng v th cc phn t thng c xu hng di
chuyn (magnetophoresis) ti nhng v tr n nh ni m tng cc lc tc ng
ln phn t c xu hng cn bng. Vic tnh ton cc lc tc dng ln phn t t
cho php chng ta xc nh v tin on c cch m phn t t di chuyn v

10
v tr n nh ca chng khi c t vo mi trng t. Do , tng c
hiu qu ca phn tch t tnh, bn cnh cc yu cu khc th gi tr ca tch cao
cng c yu cu.
Theo d on vi cc k thut ch to cc h thng vi c in t v cc vi
nam chm ngy nay, cc cu trc t vnh cu c th tch hp c trong cc h
thng phn tch vi lu, do m rng cc kh nng ng dng ca nam chm.
Mt thc t r rng l cc h thng phn tch t ny kh phc tp, t tin v
cn nhiu cng on cng nh thi gian ch to. Do , cc phng php
thit k l thuyt c s dng thu c m hnh h thng ti u trc khi
ch to. Cng vic u tin v quan trng nht ca qu trnh thit k l thuyt
ny l m phng t trng. V vy trong lun vn ny, chng ti nghin cu l
thuyt v m phng t trng ca mt s cu trc t kch thc micro-nano, c
tnh t cng v d hng t ln theo mt trc. Ti vin ca cc nam chm, t
trng (B) rt mnh v bin thin (B) ln c to ra, vi tch gi tr (BB) c
th t 103 105 T2/m.

11
CHNG 1. TNG QUAN

1.1. T trng v cc i lng c bn


T trng l mi trng vt cht c bit bao quanh in tch chuyn
ng v tc dng lc ln in tch chuyn ng trong n. T trng c th sinh
ra bng hai cch: s dng cc cun dy c dng in chy trong dy dn hoc
nam chm vnh cu. Trong cc nam chm vnh cu khng c cc dng in theo
ngha thng thng m ch c chuyn ng qu o v chuyn ng spin ca
in t. cng chnh l ngun gc c bn ca hin tng t trong vt liu.
Cm ng t l i lng vct, c trng cho t trng v phng din
tc dng lc.
Cng t trng hay cn gi l vct cng t trng c trng
cho mnh yu ca t trng. Trong chn khng hoc khng kh, cng t
trng H c chiu ging nh chiu ca cm ng t B. Chng lin kt vi nhau
bi phng trnh [1, 2]:
(1. 1)
vi 0 = 410-7 N.A-2 l t thm ca chn khng.
Trong cc vt liu t, mi vt liu t c mt t trng ni ti (t ) nn
khi c t trong t trng ngoi , cm ng t B s bao gm c thnh phn ca
t trng ngoi , v t bn trong vt liu:
(1. 2)
cm t thit lp mi quan h gia M v H theo phng trnh sau:
(1. 3)
T cc phng trnh trn, chng ta c th thy:
(1. 4)
vi r l t thm tng i ca vt liu so vi chn khng.
1.2. Cc phng trnh c bn ca t trng tnh
Nh chng ta bit in trng v t trng ng thi tn ti trong
khng gian to thnh mt trng thng nht gi l trng in t. V vy m
t v trng in t, Maxwell nu ra mt h thng cc phng trnh sau [20]:
- Dng vi phn:
12
(1. 5)

(1. 6)

(1. 7)

(1. 8)

- Dng tch phn:

(1. 9)

(1. 10)

(1. 11)

(1. 12)

(1. 13)

(1. 14)

trong : l vc t cng in trng, c n v (V/m)


l vct cng t trng, c n v (A/m)
l in cm, c n v (C/m2)
l mt in tch, c n v (C/m3)
vct cm ng t, c n v (T)
d vct vi phn din tch c hng vung gc vi mt S c n v
(m2)
dV vi phn th tch V c bao bc bi din tch S, c n v (m3)
d vct vi phn ca ng cong tip tuyn vi ng cong (C) bao
quanh din tch S, c n v (m)
, l hng s in mi v t thm ca mi trng
H cc phng trnh Maxwell vit nh trn ch c p dng trong nhng
iu kin sau:

13
- Cc vt th ng yn hoc chuyn ng chm trong in t trng.
- Cc i lng c trng cho tnh cht in t ca mi trng khng
ph thuc thi gian v khng ph thuc cc vct c trng cho in t trng.
Nh vy, h phng trnh Maxwell cho php ta xc nh c trng thi
ca in t trng mt cch n gin. Khi p dng h phng trnh Maxwell
cho t trng tnh, ta phi cho cc o hm theo thi gian bng 0 v cho (khng
c mt dng) do cc phng trnh Maxwell s n gin i nhiu. T
nhng iu kin trn, ta c th vit li h phng trnh Maxwell cho trng tnh
t gm cc phng trnh sau y:

(1. 15)

(1. 16)

(1. 17)

(1. 18)

1.3. Phn loi mt s vt liu t


T trng c nh ngha bng cc ng sc t, khi t trng tng
tc vi bt k loi vt liu no , s ng sc t c th tng hoc gim.
Ngun t trng theo c th c khuch i hay gim i trong vt liu nh
l kt qu ca s tng tc. Cc cht khc nhau tng tc vi t trng mc
khc nhau. biu din mc tng tc ca vt liu vi t trng ngoi,
ngi ta da vo cng thc 1.3. Thng qua cng thc ny ngi ta a ra khi
nim h s t ha l i lng c trng cho mc b t ha ca vt liu.
Da vo gi tr ca h s ny, cc vt liu t thng c chia lm ba nhm,
bao gm vt liu nghch t, thun t v st t. Nhm vt liu st t c th c
coi l lp con ca thun t nhng vn c tch ring bi c nhng tnh cht t
quan trng [1, 2, 20].
1.3.1. Vt liu nghch t
Nh ta bit, hiu ng nghch t c mi nguyn t t trong t trng
ngoi. Do tnh cht nghch t c mi cht. Tuy nhin, tnh cht nghch t s
th hin r ch yu nhng cht m khi cha t trong t trng ngoi, tng
m-men t nguyn t (hay phn t) ca chng bng 0, ngha l mi m-men t
qu o v m-men t spin hon ton trit tiu ln nhau. l nhng cht kh
him (He, Ne, Ar, Kr, Ze, Rn) hoc cc ion (Na+, Cl-) c cc lp in t ging
14
nh kh him. Tnh cht nghch t cng th hin c mt s cht c m-men t
nguyn t chim u th so vi hiu ng thun t nh Cu, Ag, Sb, Bi. Ngoi ra,
cc cht nh Pb, Zn, Si, Ge, S, CO2, H2O, thy tinh v a s cc hp cht hu c
cng l cc cht nghch t. Khi c t trong t trng ngoi, t ca cc vt
liu ny l rt yu v ngc hng vi t trng ngoi. cm t c gi tr m
nm trong khong t -10-6 ti -10-4 v khng thay i theo nhit .
1.3.2. Vt liu thun t
Khc vi cht nghch t, cht thun t khi b t ha s sinh ra mt t
trng ph hng cng chiu vi t trng ngoi.
Tnh cht ny th hin nhng cht m khi cha c t trng ngoi, m-
men t nguyn t (hay phn t) ca chng khc 0. l nhng cht nh cc
kim loi kim (Na, K,), Al, NO, Pt, O2, N2, cc nguyn t t him,
Khi cha t khi vt liu thun t vo trong t trng ngoi, theo l
thuyt Langevin, do chuyn ng nhit, cc m-men t nguyn t sp xp hon
ton hn lon nn tng m-men t ca c khi thun t bng 0. Khi t khi vt
liu thun t vo trong t trng ngoi, cc m-men t nguyn t c xu hng
sp xp theo hng ca t trng ngoi. Tuy nhin chuyn ng nhit li c xu
hng lm cho chng sp xp hn lon. Di tc dng ng thi ca c hai
nguyn nhn trn, cc m-men t nguyn t s sp xp c th t hn theo
hng ca t trng ngoi, to ra mt m-men t tng trong khi vt liu thun
t, m-men t tng ny s bin mt khi t trng ngoi c loi b. cm t
ca vt liu thun t c gi tr trong khong t 10-4 ti 10-3 v ph thuc vo
nhit , cm t ln hn nhit thp v gim dn khi nhit tng do
dao ng nhit ca cc m-men t.

1.3.3. Vt liu st t
Nghch t v thun t l nhng vt liu t yu. St t l mt loi vt liu
t mnh. cm t ca vt liu st t c th ln hn cm t ca vt liu
nghch t thun t hng trm triu ln. cm t ca vt liu st t c gi tr
trong khong t 102 ti 105 [3, 4, 6, 9-11, 14-16, 20-26].
Cc nguyn t ha hc c tnh cht st t l Fe, Ni, Co, Gd, mt s
nguyn t t him nhit rt thp, Ngoi ra cn mt s lng ln cht st
t l hp kim ca cc nguyn t st t vi nhau, hp kim ca cc nguyn t st

15
t vi cc nguyn t khng st t (nh Fe-Ni, Fe-Ni-Al,) v mt s hp kim
ca cc nguyn t khng st t vi nhau (nh Cu-Mn-Al),
Ging vt liu thun t ch c m-men t tnh, nhng cc m-men t
ny lin kt cht ch vi nhau. Cc m-men t nguyn t lin kt v sp xp
song song v cng chiu vi nhau qua mt vng khng gian gi l min Weiss
(domain). Nhit tng trong cc cht st t cng lm gim m-men t tng
ca vt liu bi dao ng nhit ca cc m-men t ring r. Cc cht st t mc
d c t t pht nhng m-men t tng cng vn c th bng 0 v m-men t
tng ca cc min Weiss lin kt ngu nhin vi nhau v khng c nh hng
u tin. Khi vt liu c t trong t trng ngoi vi cng tng dn, cc
m-men t nguyn t s c sp xp cng hng vi t trng ngoi cho ti
khi t trng thi bo ha t (MS). Khi vt liu t c trng thi bo ha t,
nu t trng ngoi c loi b th vt liu st t vn tn ti mt m-men t
tng tng ng vi nh hng u tin ca cc m-men thnh phn sau khi
c t ha, gi l t d (MR). Lc ny, nu t trng ngoi c a vo
theo hng ngc li v tng dn cng cc m-men t ca vt liu t
trng thi bo ha mt ln na th t ca vt liu l mt hm ca t trng
ngoi v c ng v khc ng i. th s ph thuc ca t vt liu st
t vo t trng ngoi gi l ng cong t tr. ng cong t tr l mt tnh
cht quan trng ca vt liu st t v lm cho vt liu st t c nhiu tim nng
ng dng m mt trong nhng ng dng c bn v in hnh nht ca chng l
dng ch to nam chm.
1.4. ng cong t tr
T tr (magnetic hysteresis) l hin tng bt thun nghch gia qu trnh
t ha v o t cc vt liu st t do kh nng gi li t tnh ca cc vt liu
st t. Hin tng t tr c biu hin thng qua ng cong t tr (t - t
trng M(H), hay cm ng t - t trng B(H)), c m t nh sau: sau khi t
ha mt vt st t n mt t trng bt k, nu ta gim dn t trng v quay
li theo chiu ngc, th n khng quay tr v ng cong t ha ban u na,
m i theo ng khc, v nu ta o t theo mt chu trnh kn (thay i t
trng ngoi theo hng ngc li), th ta s c mt ng cong kn gi l
ng cong t tr hay chu trnh t tr [1, 15] (hnh 1.1). Tnh cht t tr l mt
tnh cht ni ti c trng ca cc vt liu st t, v hin tng tr biu hin kh
nng t tnh ca ca cc cht st t [20].

16
Hnh 1. 1. ng cong t tr M(H) ca vt liu st t vi lc khng t HC, t d
MR, t bo ha MS.
Trn ng cong t tr, ta s xc nh c cc i lng c trng ca
cht st t nh:
- T bo ha (MS): l t t c trong trng thi bo ha t, c
ngha l tt c cc mmen t ca cht st t song song vi nhau.
- T d (MR): l gi tr t khi t trng ngoi c kh v 0.
- Lc khng t (HC): l t trng ngoi cn thit kh hon ton m
men t ca vt liu, hay l gi tr t i chiu. i khi lc khng t cn
c gi l trng o t.
Nguyn nhn c bn ca hin tng t tr l s tng tc gia cc m
men t c tc dng ngn cn chng quay theo t trng ngoi. C nhiu c ch
khc nhau to nn hin tng t tr cng nh cc dng ng cong t tr khc
nhau: c ch quay cc m men t, c ch hm dch chuyn vch men, c ch
hm s pht trin ca mm o t.
Vic phn tch ng cong t tr ca cc vt liu st t dn ti khi nim
vt liu t cng v vt liu t mm (hnh 1.2).

17
Hnh 1. 2. ng cong t tr ca vt liu t mm v vt liu t cng.
Vt liu t mm l vt liu d t ha v d kh t bi t trng ngoi c
cng tng i thp. Khi t trng ngoi c loi b th vt liu t mm
gn nh tr v trng thi cn bng v khng c t d sau khi c t ha ti
trng thi bo ha. Lc khng t Hc thng nh hn 100Oe (1Oe = 1G = 0.0796
kA/m), chu trinh tr hep, t bao hoa, t thm ( 103) v h s t hoa rt
cao. Vt liu t mm thng c dng lm vt liu hot ng trong trng
ngoi, v d nh li bin th, li nam chm in, cc li dn t, my pht in,
role, sens t, cun cm, cun chn hay mn chn t,...
Vt liu t cng l vt liu st t kh kh t v kh t ha. Vt liu t
cng c nhiu c trng t hc, tnh cht t ph thuc nhiu vo nhit ,
bn, chng n mn, Cc i lng vt l c trng ca vt liu t cng l:
- Lc khng t Hc ln nm trong khong 102 103 kA/m. Ngun gc ca
lc khng t ln trong cc vt liu t cng ch yu lin quan n n d hng
t tinh th ln trong vt liu. Cc vt liu t cng thng c cu trc tinh th c
tnh i xng km hn so vi cc vt liu t mm v chng c d hng t tinh
th rt ln [1-4, 6, 9-11, 14-16, 21-26].
- Cm ng t d hay t d, thng k hiu l BR hay MR, l cm ng
t cn d sau khi ngt t trng. Vt liu t cng c cm ng t d MR ng k.
- Tch nng lng t cc i ((BH)max) l i lng c trng cho mnh
yu ca vt liu t, c c trng bi nng lng t cc i c th tn tr
trong mt n v th tch vt liu t. i lng ny c n v l n v ca mt
nng lng, J/m3. Tch nng lng t cc i c xc nh trn ng cong
t tr thuc v gc phn t th hai trn ng cong t tr, l mt im sao cho
gi tr ca tch cm ng t B v t trng H t cc i. c tch nng lng
t cao, vt liu cn c lc khng t ln v cm ng t d cao.

18
Bng 1.1 trnh by mt s tnh cht in hnh ca cc vt liu t cng ph bin
nht hin nay [21, 25, 26]. Trong s cc vt liu t cng th vt liu NdFeB c
cu trc tinh th kiu t gic vi lc khng t ln (hn 10kOe) v t bo ha
cao (ti 1.62T) nn l lo nam chm vnh cu mnh nht hin nay vi kh nng
cho tch nng lng t ln, n c s dng rng ri trong cc nghnh cng
nghip my mc, thit b truyn thng, ha hc, y hc, cc lnh vc cng ngh
cao nh hng khng v tr, hng khng, qun shn na, chng cn c s
dng trong cc nghnh cng ngip mi ni nh nghnh cng nghip nng lng
mi ca nng lng gi. Bn cnh , mt s nghin cu cho thy vic gim
kch thc nam chm NdFeB khng lm thay i tnh cht t ca chng cho
thy nam chm ny c nhiu kh nng tch hp vi cc thit b v vi h thng.
Bng 1. 1. Nhit Curie TC, t trng d hng HA, t bo ha MS, mt khi
v kh nng chng n mn ca cc hp cht kim loi chuyn tip-t him in hnh,
FePt (L10), CoPt (L10) so vi cc vt liu c in BaFe12O19, -Fe [22].

Vt liu MS HA (BH)max, th TC Kh nng


(T) (T) (kJ/m3) (K) (g/cm3) chng n mn
Nd2Fe14B 1.61 7.6 514 585 7.6 Km
SmCo5 1.05 40.0 220 1000 8.6 Km
Sm2Co17 1.30 6.4 333 1173 8.7 Km
Sm2Fe17N3 1.54 21.0 472 749 7.7 Km
FePt-L10 1.43 11.6 407 750 15.1 Tt
CoPt-L10 1.00 4.9 200 840 15.2 Tt
-Fe 2.16 - - 1043 7.9 Km
BaFe12O19 0.48 1.8 - 742 5.3 Tt
1.5. Mc tiu ca lun vn
Chng ta thy rng t tnh l mt thuc tnh c bn v quan trng ca vt
liu. V c bn, d nhiu hay t th mi vt liu u biu hin tnh cht t. Cc
vt liu t ngy nay c ng dng nhiu trong khoa hc k thut v cuc sng.
Trong tt c cc ng dng, cc vt liu t c s dng u c mt hnh dng,
kch thc v tnh cht t nht nh ph hp vi mc tiu ng dng. Tt c cc
thng s lin quan u hng ti vic to ra mt khng gian t trng nh
mong mun. V vy trc khi ch to, ngi ta thng tin hnh m phng
c th thu c vt liu t vi hnh dng v tnh cht hp l.

19
Mt trong nhng ng dng c quan tm nghin cu hin nay l kh
nng bt gi cc phn t kch thc nh da vo tnh cht t ca chng ca cc
vt liu, cu trc t nh s phn b khng ng nht ca t trng trn b mt
cc vt liu t v cu trc t. Bng vic s dng cc vt liu t c kch thc,
hnh dng, trt t v tnh cht t ph hp, chng ta c th to ra c khng
gian c cng t trng ln v s bin thin t trng mnh qua tc dng
c lc ln ln cc phn t kch thc nh.
Mc tiu chnh ca lun vn l:
- Lun vn ny c thc hin vi mc ch tnh ton, kho st l thuyt
s phn b ca t trng trn mt s nam chm t cng hnh tr NdFeB c cu
trc micro bng cc m hnh l thuyt v phn mm m phng.
- Cc gi tr thu c bng tnh ton v m phng c so snh vi nhau,
qua cho thy mc chnh xc v ng tin cy ca cc m hnh l thuyt
cng nh phn mm m phng t trng.
- Cc kt qu tnh ton v m phng thu c s lm c s cho cc
nghin, ch to cc vi cu trc t thc t c t trng v s bin thin t trng
ph hp cho mt s ng dng lin quan ti vic bt gi ht t v phn t sinh
hc.

20
CHNG 2. M HNH L THUYT V PHN MM M PHNG

Cc m hnh tnh ton l thuyt v t trng ca cc nam chm c da


trn nn tng cc phng trnh Maxwell v cc nh lut v t trng. Hai m
hnh c s dng ph bin hin nay nghin cu v tr trng v s bin
thin t trng trong khng gian xung quanh cc nam chm l m hnh dng
tng ng v m hnh t tch. Ty thuc vo c im vt liu ca nam chm
v cc thng s u vo cng nh mc ch nghin cu ngi ta s la chn m
hnh ph hp thc hin tnh ton nhm thu c cc kt qu mong mun v
h tr cho cc nghin cu thc nghim.
2.1. M hnh l thuyt
2.1.1. M hnh dng tng ng
M hnh dng tng ng hay cn gi l m hnh dng Ampere [7, 8,
12, 13, 18]. Trong m hnh ny, tnh ton t trng c sinh ra bi cc nam
chm c t M ngi ta coi nam chm l mt cun dy hoc mt s cun dy
c hnh dng ph hp vi nam chm sao cho m-men t tng do cc cun dy
sinh ra tng ng vi m-men t d ca cc nam chm.

Hnh 2. 1. T trng do dng in trn bn knh R sinh ra ti im P bt k.


V d, xt mt nam chm hnh tr c bn knh R, chiu cao L v vect t
d 0MR hng theo trc ca nam chm. xc nh t trng trong khng
gian xung quanh nam chm, ngi ta s coi t trng cho nam chm sinh ra
tng ng vi t trng do mt cun dy c bn knh R gm N vng dy,
chiu cao L c dng in I chy qua sinh ra (xem hnh 2.1). tnh t trng do

21
cun dy ny sinh ra, trc ht chng ta xt t trng do vng dy bn knh R,
tm O (0; 0; 0) c dng in I chy qua sinh ra ti im P c ta (z; y; z).
tnh c t trng do vng dy sinh ra ti im P, ta chia vng dy
thnh v s phn t dng Id v xt phn t dng ti v tr c ta l vect ,
phn t dng ny c th vit li nh sau:

(2.1)

V tr tng i gia im P v phn t dng in Id l:

(2.2)

Vecto n v ca vect l:

((2.3)

Ta c:
((2.4)
T trng do phn t dng I sinh ra ti im P tnh theo nh lut Biot-
Savart l:

(2.5)

Suy ra t trng tng cng ti im P do c vng dy sinh ra l:

(2.6)
Nh vy, cc thnh phn t trng ti im P ln lt l:
- Thnh phn t trng theo trc Ox:

(2.7)

- Thnh phn t trng theo trc Oy:

22
(2.8)

- Thnh phn t trng theo trc Oz:

(2.9)

+ Trng hp im P nm trn trc ca vng dy, tc im P c ta


(0; 0; z):

(2.10)

(2.11)

(2.12)

Tip theo, chng ta xem xt t trng do cun dy c bn knh R gm N


vng dy, chiu di l c dng in I chy qua sinh ra ti im P c ta (x; y;
z) (hnh 2.2). tnh t trng do cun dy sinh ra, ta chia cun dy thnh v
s vng dy c chiu dy dz, mi vng dy s mang dng in:

(2.13)

Hnh 2. 2. T trng do cun dy sinh ra ti im P bt k.

23
Xt vng dy ti v tr z, t trng do vng dy ny sinh ra ti im P bt
k l:

(2.14)

(2.15)

Suy ra t trng do c cun dy sinh ra ti im P l:

(2.16)

+ Trng hp im P nm trn trc ca cun dy, tc im P c ta


(0; 0; z):

(2.17)

Tip theo, xt nam chm hnh tr c chiu cao L, bn knh R, din tch
y A v t d hng theo trc ca nam chm nh hnh 2.3. Gi n l s m-
men t lng cc c trong nam chm. T ca nam chm l:

(2.18)

(b)
(a)
24
Hnh 2. 3. Nam chm hnh tr c t d vi n m-men t lng cc (a) v cc
dng in tng ng (b).

Theo m hnh dng, mi m-men t lng cc tng ng vi mt dng


in trn, do c nam chm s gm n dng in trn ging nhau. pha bn
trong nam chm, dng in ca mt vng xc nh b trit tiu bi cc dng
ngc chiu ca cc vng ln cn. V vy, ch vin ca nam chm s trit tiu
dng khng xy ra. Do trong khi dng trung bnh bn trong nam chm b trit
tiu th vin ca nam chm xut hin dng in Ieq chy xung quanh nam chm
tng ng v ln vi t ca nam chm.

(2.19)

(2.20)

Nh vy c th tnh c t trng do nam chm sinh ra, theo m hnh


dng chng ta hon ton c th coi nam chm c t M nh mt cun dy c
dng in Ieq tng ng vi t theo cng thc (2.20) chy xung quanh
cun dy. p dng cng thc tnh t trng do cun dy sinh sinh ra trong cng
thc (2.16), chng ta rt ra c cng thc tnh t trng do nam chm sinh ra
nh sau:

(2.21)

Trong trng hp im P c ta l (0; 0; z) th cng thc (2.21) tr


thnh:

(2.22)

2.1.2. M hnh t tch


Theo m hnh ny, tnh t trng do mt nam chm sinh ra ti mt
im bt k xung quanh nam chm ngi ta coi t trng l tp hp ca cc m-
men t lng cc , mi m-men t lng cc ny s sinh ra ti im cn xt
mt t th [5, 7, 12, 13, 17, 18, 19, 20]:

25
(2.23)

vi l vecto n v theo hng ca .


T th do c nam chm sinh ra ti im ang xt l:

(2.24)

T trng do nam chm sinh ra ti im ang xt l:

(2.25)

V d tnh t trng do nam chm hnh tr bn knh R, chiu cao L, c


m-men t nm theo trc ca hnh tr (nh hnh 2.4) sinh ra ti im P nm
trn trc z, theo m hnh t tch chng ta chia nam chm thnh v s phn t t,
mi phn t cha mt lng m-men t (dV l th tch ca phn t t).
Xt m-men t ti v tr , m-men t ny sinh ra ti im P mt t th c
gi tr:

(2.26)

T th do c nam chm sinh ra ti P l:

suy ra:

suy ra:

suy ra:

suy ra:

(2.27)

Vy t trng do nam chm sinh ra ti im P l:

(2.28)

26
Hnh 2. 4. Nam chm hnh tr vi v s phn t t (a) v s tnh ton t th do mt
phn t t sinh ra ti im P (0; 0; z) (b).
D dng thy rng hai phng trnh (2.22) v (2.29) tng ng nhau,
ch sai khc nhau h s N (s vng dy). Thc vy, xt im P nm ti tm ca
mt trn ca nam chm, th phng trnh (2.22) tr thnh:

(2.29)

v phng trnh (2.28) tr thnh:

(2.30)

2.2. Phn mm m phng


Chng ta thy rng m hnh dng tng ng v m hnh t tch c th
l tng ng nhau xt v mt xc nh t trng do cc nam chm sinh ra
nh phn tch trn. Da vo cc m hnh ny chng ta c th tnh c gi
tr t trng ti nhng im xc nh do mi nam chm n l to ra. Trong
trng hp mt tp hp cc nam chm, chng ta cng c th tnh c t trng
thnh phn do mi nam chm sinh ra ri p dng nguyn l chng cht t
trng xc nh t trng tng do cc nam chm chm sinh ra. Bng cch
tnh ton t trng ca mt tp hp cc nam chm ti cc im khc nhau trong
khng gian xung quanh cc nam chm, chng ta c th kho st c s phn

27
b ca t trng cng nh tnh c s bin thin ca t trng trn b mt ca
cc nam chm.
Tuy nhin vic tnh ton s cho tp hp nhiu nam chm l rt phc tp
v mt nhiu thi gian. Chnh v vy phn mm tnh ton, m phng t trng
c xy dng v pht trin nhanh chng. Nhn chung, cc phn mm ny
u c xy dng trn c s s dng mt trong hai m hnh l thuyt tnh ton
t trng nh trnh by phn 2.1, hoc s dng ng thi c hai m hnh
tng thm la chn tnh ton cho ngi dng. Trong cc phn mm ny, vic
gii cc phng trnh tch phn ca t trng, c thc hin v c th p dng
cho cc vt liu t c tnh cht khc nhau thu c nhng gi tr s c th
tng ng. Mt s phn mm tnh ton, m phng c th k n nh:
- Infolytica MagNet (www.infolytica.com)
- Flex PDE 3.0 (www.pdesolutions.com)
- Ansys Maxwell (www.ansys.com/products/electronics/ANSYS-Maxwell)
- Lisa (www.lisa-fet.com)
- FEMLAB (www.femlab.com)
- FEMM (www.femm.foster-miller.net/wiki/HomePage)
-MacMMems (www.forge-mage.g2elab.grenoble-inp.fr/project/macmmems)
Cc phn mm m phng ny u c nhng u im ring v hng ti
nhng i tng ngi dng khc nhau. Hai phn mm c s dng trong lun
vn ny tnh ton t trng ca mt h cc vi nam chm hnh tr l phn
mm MacMMems v phn mm Ansys Maxwell.
2.2.1. Phn mm MacMMems

28
(a)

(b)

Hnh 2. 5. Giao din m-un thit k (a) v giao din m-un tnh ton (b) ca phn
mm MacMMems.
MacMMems l mt phn mm m c xy dng da trn m hnh dng
tng ng vi giao din kh n gin cho php ngi dng xc nh c
cng t trng, cm ng t do mt s nam chm c hnh dng n gin
(hnh tr, hnh hp ch nht, hnh mng nga,) sinh ra. Ngoi ra phn mm
cng cho php xc nh lc tng tc t gia cc nam chm vi nhau hoc gia

29
nam chm vi cc phn t c t tnh. Phn mm c cc m-un ring bit gip
cho vic thit k v tnh ton, ti u ha thi gian tnh ton ngn.
- M-un thit k (hnh 2.5a) cho php thit k cc nam chm vi cc
thng s v hnh dng, kch thc, v tr, thuc tnh vt l ban u (ph thuc
vo vt liu nghin cu) c th thay i nh mong mun. Ngoi ra m-un ny
cng cho php ngi dng thit lp cc thng s u ra mong mun t d liu
c sn trong m-un hoc nh ngha cc thng s u ra mi bng cch nhp
cc phng trnh tnh ton n gin.
- M-un tnh ton (hnh 2.5b) cho php thu c cc kt qu tnh di
dng th v bng s liu, v d gi tr t trng theo cc phng ta
x,y,z C th quan st s thay i ca kt qu tnh ton thu c mt cch d
dng bng cch thay i cc thng s u vo c nh ngha sn trong m-
un thit k.
2.2.2. Phn mm Ansys Maxwell

Hnh 2. 6. Giao din ca phn mm m phng Ansys Maxwell.


Ansys Maxwell l mt trong nhng phn mm thng mi phc tp v tt
nht hin nay cho php tnh ton, m phng t trng v cc i lng lin quan
ti t trng ca c t trng tnh v t trng bin thin theo thi gian. Phn
mm c xy dng trn c s h thng cc phng trnh Maxwell, tc l s
dng m hnh t tch xc nh t trng do cc nam chm sinh ra.

30
Phn mm ny cho php m phng t trng di dng 2D hoc 3D ca
nhiu loi nam chm vi hnh dng phc tp v vt liu khc nhau. Giao din
thit k v tnh ton c tch hp lm mt cho php hin th hnh nh m
phng khng gian t trng trc tip xung quanh cc nam chm. Tuy nhin
phn mm c cu trc kh phc tp, kh s dng v cn nhiu thi gian thc
hin qu trnh tnh ton, m phng.
Hnh khi tr trn l mt dng hnh hc c s i xng cao. Xt v mt
ng dng, hnh khi tr trn c ng dng nhiu trong cc chi tit my, cc
thit b k thut vi nam chm hnh khi tr, chng ta c th thit k ch
to cc nam chm c t trng u trong lng khi tr trn cho cc ng dng
nh trong ng c in... Trong lun vn ny, chng ti chn vi nam chm c
dng hnh khi tr trn kho st v y l hnh dng cha c nghin cu
trong nc. Bn cnh vic s dng cc m hnh tnh ton v phn mm m
phng nu, chng ti s kho st v t trng v s bin thin t trng trn
b mt ca mt i tng vi nam chm kch thc micro c th, y l vt liu
t cng NdFeB.

31
CHNG 3. KT QU V THO LUN

Trong lun vn ny, chng ti m phng v tnh ton t trng trong


khng gian xung quanh mt s vi nam chm NdFeB hnh tr vi bn knh R =
25 m, chiu cao h = 5 m v c cm ng t d Br = 1.2 T dc theo trc ca
nam chm. Gi tr t d ny ch c th t c trong cc nam chm vnh cu
cu trc nano [1, 2, 6, 26]. Cc kt qu thu c cho bit t trng v s bin
thin t trng trn b mt cc nam chm cng nh s thay i ca cc i
lng ny khi thay i s lng vi nam chm.
3.1. Kt qu kho st t trng bng phn mm MacMMems
Trong phn ny chng ti s dng phn mm m phng MacMMems
kho st t trng thnh phn Bz v s bin thin ca thnh phn t trng ny
trn b mt cc vi nam chm tr NdFeB. u tin l cu hnh 11 nam chm
kho st s phn b t trng xung quanh nam chm. Sau l cc cu hnh
22, 33, 44 v 55 nam chm, y l cu hnh gm cc nam chm ging ht
nhau sp xp trt t v tun hon. Vic nghin cu, kho st t trng trong
khng gian xung quanh cc cu hnh ny cho php chng ta hiu c s ph
thuc ca t trng v s bin thin t trng vo s lng nam chm.
Trong tt c cc cu hnh, cm ng t d ca nam chm u c gi s
nm theo trc ca nam chm (hng theo trc Oz), chnh v vy cc tnh ton v
m phng di y u tp trung vo thnh phn t trng Bz l thnh phn
song song vi trc Oz v vung gc vi b mt nam chm.
3.1.1. Cu hnh 11 nam chm
Trc ht, chng ti kho st s phn b t trng trn b mt ca mt
nam chm hnh tr. thc hin kho st ny, chng ti thc hin tnh ton cc
gi tr Bz ti cc v tr:
- Dc theo ng thng i qua tm mt trn v song song vi mt trn ca
nam chm (ng x1 trong hnh 3.1).
- Dc theo ng thng i qua mp mt trn ca nam chm v song song
vi ng x1 (ng x2 trong hnh 3.1).
- Dc theo ng thng song song vi ng x1 v cch x1 mt khong 2R
ti mt s cao d cch b mt trn nam chm nhng khong 0, 10, 20, 40 v
100 m. Cc kt qu thu c gm thnh phn t trng Bz, s bin ca thnh
32
phn ny dc theo cc ng x1, x2 v x3 (dBz/dy) v s bin thin ca thnh
phn ny dc theo theo trc z (dBz/dz) c biu din di dng th.

Hnh 3. 1. Cu hnh 11 nam chm tr v v tr tnh ton t trng, s bin thin t


trng.
Kt qu kho st t trng dc theo ng c ba ng qut cho thy t
trng gim dn khi ta tng khong cch d t b mt nam chm. Theo hnh 3.2b
ti ngay b mt ca nam chm (d = 0 m), tnh t trc ca mam chm i ra mp
ca nam chm th t trng tng dn v t gi tr cc i ngay st mp trong
nam chm (y = 24 m) Bz max ~ 0.32 T v cng t gi tr cc tiu ngay ti vng
gn mp ngoi nam chm (y = 26 m) Bz min ~ - 0.18 T. iu ny c gii
thch bi ng sc t do nam chm sinh ra l nhng ng cong khp kn i ra
t mt trn nam chm v i vo mt di nam chm, do ti mp ca nam
chm c mt ng sc t ln. ph trong nam chm, cc ng sc c
hng i ln (i ra khi mt trn nam chm) nn Bz t cc i, trong khi pha
ngoi nam chm, cc ng sc c hng i xung tr v mt di nam
chm to thnh nhng ng sc khp kn nn Bz t cc tiu. Ti nhng
khong cch d cao hn, chng ta thy rng t trng khu vc pha trong nam
chm ln v n nh trong khi ngoi mp nam chm th t trng gim gn
nh ngay v 0 T. iu ny c gii thch rng khi i ra xa mt trn nam chm
th cc ng sc tha dn v gn song song vi nhau cho nn nhng v tr
gn ng ko di ca trc nam chm th ng sc t vn cn tn ti, cn
nhng v tr xa trc ca nam chm th hu nh khng tn ti ng sc t v
gn mp nam chm cc ng sc t khp kn nn khng i ra xa khi b
mt nam chm c.

33
(a)

(b)

(c)

Hnh 3. 2. T trng thnh phn Bz c m phng dc theo cc ng qut x1 (a), x2


(b) v x3 (c) ti cc cao d khc nhau.
34
Cc kt qu kho st dc theo ng qut x2 (hnh 3.2b) cho thy t
trng ln nht ti im tip xc (y = 0 m) vi nam chm v gim dn khi i
xa im ny c v hai pha. iu ny ph hp vi thc t cc ng sc t ch
tp trung st mp (vin) nam chm, cn nhng v tr xa mp nam chm theo
cc hng trong mt phng Oxy th ng sc t khng tn ti. Ti nhng v tr
ngay st b mt nam chm (d = 0 m), t trng cc i Bz max ~ 68.4 mT ti v
tr c thnh phn ta y = 0 v t trng cc tiu Bz min ~ -178 mT ti v tr c
thnh phn ta y = 6. Trn hnh, chng ta thy khong cch gia im cc
i v im cc tiu ngy cng tng, trong khi bin gia hai gi tr cc i v
cc tiu ngy cng gim khi tng khong cch d.
Hnh 3.2c cho thy mt kt qu th v, l c s thay i im cc tiu
thnh im cc i ti nhng im c thnh phn ta y = 0 dc theo ng
qut x3 ti cc cao d khc nhau. Ti nhng v tr c d thp th t trng gy ra
ti im c thnh phn ta y = 0 ch yu do s ng gp ca cc ng sc
t cong mnh v hng xung di gn mp nam chm sinh ra do nhng
im ny c t trng cc tiu, cn nhng v tr c d cao th trng gy ra li
do s ng gp ca cc ng sc t thng gn trc nam chm sinh ra do
nhng im c thnh phn ta y = 0 tr thnh nhng v tr c t trng cc
i. Ni chung, cc kt qu kho st t trng xung quanh nam chm hnh tr
thu c trong trng hp ny ph hp vi s phn b thc t ca cc ng
sc t xung quanh nam chm tr v ph hp vi l thuyt v t trng.
kim tra chnh xc ca cc kt qu thu c t phn mm cng nh
s ph hp gia phn mm m phng MacMMems v m hnh l thuyt dng
tng ng, chng ti s dng cng thc (2.22) tnh gi tr l thuyt ca
thnh phn t trng Bz ti mt s im nm trn trc ca nam chm.

Trong cng thc trn, gc ta c t ti trc ca hnh tr v chnh


gia hnh tr. V vy khi p dng cng thc ny vi cu hnh nam chm ca
chng ta cn lu chuyn i tham s cao d trong cu hnh m phng vi
tham s z trong cng thc (2.22) cho ph hp. C th vi d = 0 m th z = L/2
m, d = 10 m th z = (L/2 + 10) m, Ngoi ra trong cng thc trn th L
chnh l chiu dy ca nam chm, tc l L = h = 5 m v 0M chnh l cm ng
t d ca nam chm hng theo trc z, tc l 0M = BR = 1.2 T. H s N trong
cng thc trn l s vng dy ca cun dy c dng in tng ng vi cm

35
ng t d ca nam chm nhng v chiu dy ca nam chm nh hn ng knh
ca nam chm 10 ln nn ta c th ly N = 1.
Kt qu tnh ton l thuyt gi tr Bz ti cc im nm trn trc ca nam
chm v cch mt trn ca nam chm mt khong d c tnh c th nh sau:
+ d = 0 m:

+ d = 10 m:

+ d = 20 m:

Bng 3. 1. So snh kt qu tnh ton l thuyt thnh phn t trng Bz bng m hnh
dng vi kt qu m phng.

Kt qu Bz (mT)
d( Phn mm MacMMems M hnh dng
0 117.52 117.66
10 85.45 85.43
20 49.15 49.15
Cc kt qu tnh ton l thuyt ny c so snh vi cc gi tr thu c
t phn mm m phng v c tng kt trong bng 3.1. T bng so snh ta
thy kt qu tnh ton t m hnh dng tng ng v kt qu m phng t
phn mm MacMMems l ging nhau, qua cho thy s chnh xc ca phn
mm m phng so vi m hnh l thuyt.

36
(a)

(b)

(c)

Hnh 3. 3. S bin thin ca thnh phn t trng Bz theo y (dBz/dy) c m phng


dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau.

37
(a)

(b)

(c)
Hnh 3. 4. S bin thin ca thnh phn t trng Bz theo z (dBz/dz) c m phng
dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau.

38
Cc kt qu kho st s bin thin thnh phn t trng Bz theo y (dBz/dy)
v theo z (dBz/dz) thu c t phn mm m phng c biu din trong hnh
3.3 v 3.4. Ph hp vi s phn b ca mt ng sc t l nhiu ti mp
ca nam chm v ph hp vi cc gi tr t trng Bz kho st c trn, s
bin thin ca thnh phn t trng Bz theo y v theo z ln nht mp nam
chm trong trng hp kho st theo ng qut x1 v ng qut x2. C th vi
ng qut x1 th dBz/dy v dBz/dz u t gi tr ln nht v nh nht ti mp
nam chm v ln cn mp nam chm trong khi chnh gia mt nam chm th
cc gi tr ny bng 0 hoc xp x 0. Ti d = 10 m, dBz/dy max ~ 6.7103 T/m v
dBz/dz max ~ 2104 T/m. Vi ng qut x2 th c dBz/dy v dBz/dz u bng 0 ti
v tr mp nam chm, sau ti nhng im ln cn mp nam chm v c hai
pha th gi tr dBz/dy v dBz/dz t cc i hoc cc tiu nhng sau li nhanh
chng gim v 0 khi tip tc i xa mp nam chm v 2 pha. Ti d = 10 m,
dBz/dy max ~ 2.4103 T/m v dBz/dz max ~ 2104 T/m. Cn trong trng hp kho
st theo ng qut x3, ti cc im c thnh phn ta y = 0 th dBz/dy = 0 v
dBz/dz l ln nht. T cc kt qu kho st, chng ta c th thy t trng Bz v
s bin thin ca Bz ca nam chm tp trung ch yu ti mp v ln cn mp
nam chm trong khng gian ngay st nam chm, cn khng gian xa nam chm
th t tng Bz ch yu tp trung trc ca nam chm v hu nh khng c s
bin thin ca Bz.
3.1.2. Cu hnh 22 nam chm

Hnh 3. 5. Cu hnh 22 nam chm v v tr tnh ton t trng, s bin thin t


trng.

39
Tip theo chng ti m phng v kho st t trng cng vi s bin
thin t trng xung quanh cc cu hnh nhiu nam chm hn. Nguyn tc ca
cc cu hnh ny l ch tng s lng nam chm theo c hai chiu, khong cch
gia cc nam chm bng chiu rng ca cc nam chm v khng thay i bt k
cc thng s no lin quan ti kch thc, thuc tnh t ca tng nam chm.
Vic kho st ny nhm nghin cu s nh hng ca s lng nam chm ln t
trng v s bin thin t trng trong khng gian xung quanh cc nam chm.
Trc ht, chng ti kho st t trng xung quanh cu hnh gm 22
nam chm hnh tr sp xp tun hon (hnh 3.5). Cc tnh ton, m phng gi tr
t trng Bz v s bin thin ca n theo y (dBz/dy) v theo z (dBz/dz) bng phn
mm c thc hin dc theo cc ng qut x1, x2, x3 nh trong hnh 3.5 ti cc
cao d (khong cch tnh t b mt nam chm) khc nhau.
Cc kt qu thu c c biu din bng cc th trong hnh 3.6, 3.7
v 3.8. Cc kt qu cho thy gi tr ca t trng Bz v gi tr ca s bin thin
ca Bz dc theo ng qut x1 v x2 ti cc v tr tng ng vi cu hnh 11
nam chm cng nh hnh dng th khng c g thay i so vi cc th
trong hnh 3.2, 3.3 v 3.4. Cc th ny trong cu hnh 22 nam chm u xut
hin thm cc nh cc i, cc tiu ph hp vi s sp xp tun hon ca cc
nam chm. Ring cc kt qu thu c dc theo ng qut x3 trong cu hnh
22 nam chm c s thay i r rt so vi cc kt qu thu c trong cu hnh
11 nam chm. C th vi gi tr Bz, dBz/dy v dBz/dz ti cc v tr dc ng
qut x3 thu c trong cu hnh 22 nam chm ln gp i gi tr Bz tng ng
trong cu hnh 11 nam chm. iu ny c cho l do c s tng hp r rt
hn ca t trng thnh phn ca bn nam chm trong cu hnh dc theo ng
qut x3. Cc th dBz/dy trong hnh 3.7c c mt dc nht nh, iu ny
c cho l do c s ng gp bt i xng ca cc thnh phn t trng ca
cc nam chm vo t trng tng hai u th.
Nhn chung, trong cu hnh 22 nam chm, t trng v s bin thin t
trng trong khng gian xung quanh cc nam chm v mp cc nam chm
khng c s thay i so vi cu hnh 11 nam chm. Ti nhng v tr trong
khong trng gia bn nam chm, t trng v s bin thin t trng tng gp
i so vi cc v tr tng ng trong cu hnh 11 nam chm. Khng gian t
trng xung quanh cu hnh 22 nam chm cng xut hin nhiu vng bin
thin t trng hn so vi cu hnh 11 nam chm.

40
(a)

(b)

(c)

Hnh 3. 6. T trng thnh phn Bz c m phng dc theo cc ng qut x1 (a), x2


(b) v x3 (c) ti cc cao d khc nhau.

41
(a)

(b)

(c)
Hnh 3. 7. S bin thin ca thnh phn t trng Bz theo y (dBz/dy) c m phng
dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau.

42
(a)

(b)

(c)
Hnh 3. 8. S bin thin ca thnh phn t trng Bz theo z (dBz/dz) c m phng
dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau.
3.1.3. Cu hnh 33 nam chm

43
Tip theo chng ti kho st t trng v s bin thin t trng trong
khng gian xung quanh cu hnh 33 nam chm nh hnh 3.9. Cc kho st
c tin hnh dc theo cc ng qut x1, x2 v x3 ti mt s cao d tng t
nh trong cu hnh 11 nam chm v cu hnh 22 nam chm.

Hnh 3. 9. Cu hnh 33 nam chm v v tr tnh ton t trng, s bin thin


t trng
Cc kt qu kho st thu c c th hin bng cc th trong hnh
3.10, 3.11 v 3.12. V c bn cc th thu c khng thay i g c v hnh
dng ln gi tr so vi cc th tng ng thu c trong cu hnh 22 nam
chm. Thc vy, t cc th chng ta c th thy t trng Bz, s bin thin t
trng dBz/dy v dBz/dz dc theo ng qut x1 u t gi tr cc i v cc tiu
ti nhng v tr ln cn cc mp nam chm. Ti khong cch d = 10 m so vi
b mt nam chm dc theo ng qut x1, Bz max ~ 80 mT, dBz/dymax ~ 6.7103
T/m, dBz/dz max ~ 2104 T/m. Dc theo ng qut x2 ti cc cao d khc nhau,
t trng Bz, s bin thin t trng dBz/dy v dBz/dz cng t gi tr cc i v
cc tiu ti cc v tr ngay st mp nam chm, v tr im cc i v im cc
tiu l rt gn nhau. Ti khong cch d = 10 m so vi b mt nam chm dc
theo ng qut x1, Bz max ~ 30 mT, dBz/dymax ~ 5103 T/m, dBz/dz max ~ 1104 T/m.
Tng t, ti khong cch d = 10 m so vi b mt nam chm dc theo ng
qut x3, Bz max ~ -11.25 mT, dBz/dymax ~ 1.2102 T/m, dBz/dz max ~ 7.5102 T/m.
Nh vy, khng gian t trng xung quanh cu hnh 33 nam chm khng thay
i v cng v mc bin thin m ch xut hin thm cc vng bin
thin.

44
(a)

(b)

(c)
Hnh 3. 10. T trng thnh phn Bz c m phng dc theo cc ng qut x1 (a),
x2 (b) v x3 (c) ti cc cao d khc nhau.

45
(a)

(b)

(c)
Hnh 3. 11. S bin thin ca thnh phn t trng Bz theo y (dBz/dy) c m phng
dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau.

46
(a)

(b)

(c)
Hnh 3. 12. S bin thin ca thnh phn t trng Bz theo z (dBz/dz) c m phng
dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau.
3.1.4. Cu hnh 44 v 55 nam chm
47
Tip theo chng ti kho st t trng v s bin thin t trng trong
khng gian xung quanh cu hnh 44 v 55 nam chm nh hnh 3.13. Cc kho
st c tin hnh dc theo cc ng qut x1, x2 v x3 ti mt s cao d tng
t nh trong cu hnh 11, 22 v 33 nam chm.
Cc kt qu kho st thu c i vi cu hnh 44 nam chm c trnh
by trong cc hnh 3.14, 3.15 v 3.16, cc kt qu kho st thu c i vi cu
hnh 55 nam chm c trnh by trong cc hnh 3.17, 3.18 v 3.19 hon ton
tng t vi cc cu hnh nam chm m phng trn.

(a) (b)
Hnh 3. 13. Cu hnh 44 (a) v 55 (b) nam chm v v tr tnh ton t trng, s
bin thin t trng.
a) Cu hnh 44 nam chm
Cc kt qu m phng cho thy, v tr, cng cng nh khong cch
gia cc im c gi tr t trng cc i (Bz max), gi tr t trng cc tiu (Bz min)
trong cu hnh 44 nam chm l khng thay i so vi cc cu hnh cu
phng trn. Ti khong cch d = 10 m dc theo ng qut x1, Bz max ~ 80 mT
ti nhng v tr trong mp nam chm, cch mp nam chm khong 15 m, Bz
min ~ 20 mT ti nhng v tr ngoi mp nam chm, cch mp nam chm 5 m.

Gi tr cc i ca s bin thin t trng theo y, dBz/dy max, gi tr cc tiu


dBz/dy min cng nh gi tr cc i ca s bin thin t trng theo z, dBz/dz max,
gi tr cc tiu dBz/dz min cng khng h thay i so vi cc kt qu tng ng
thu c trong cc m hnh khc m phng trn. V d, ti khong cch d =
10 m dc theo ng qut x1, dBz/dy max ~ 6.7103 T/m, dBz/dy min ~ -6.8103
T/m ti nhng v tr ngay st mp nam chm, dBz/dz max ~ 2104 T/m ti nhng v
tr ngoi mp nam chm, cch mp nam chm 1 m, dBz/dz min ~ -2.7104 T/m
ti nhng v tr trong mp nam chm, cch mp nam chm 1 m.

48
(a)

(b)

(c)
Hnh 3. 14. T trng thnh phn Bz c m phng dc theo cc ng qut x1 (a),
x2 (b) v x3 (c) ti cc cao d khc nhau.

49
(a)

(b)

(c)

Hnh 3. 15. S bin thin ca thnh phn t trng Bz theo y (dBz/dy) c m phng
dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau.
50
(a)

(b)

(c)
Hnh 3. 16. S bin thin ca thnh phn t trng Bz theo z (dBz/dz) c m phng
dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau.

51
b) Cu hnh 55 nam chm

(a)

(b)

(c)
Hnh 3. 17. T trng thnh phn Bz c m phng dc theo cc ng qut x1 (a),
x2 (b) v x3 (c) ti cc cao d khc nhau.

52
(a)

(b)

(c)
Hnh 3. 18. S bin thin ca thnh phn t trng Bz theo y (dBz/dy) c m phng
dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau.

53
(a)

(b)

(c)
Hnh 3. 19. S bin thin ca thnh phn t trng Bz theo z (dBz/dz) c m phng
dc theo cc ng qut x1 (a), x2 (b) v x3 (c) ti cc cao d khc nhau.

54
Cc kt qu m phng thu c cho thy, vic tng s lng nam chm
m khng thay i bt k thng s no v hnh dng, kch thc cng nh thuc
tnh t ca nam chm ch gp phn gip cho khng gian t trng xung quanh
cc nam chm c thm nhiu vng t trng bin thin qua lm tng thm
cc v tr c th lm v tr n nh cho cc i tng t tnh nu trong khng
gian xung quanh cc nam chm ny.
3.2. So snh t trng v s bin thin t trng b mt ca mt s cu
hnh nam chm m phng c bng cc phn mm m phng v tnh ton
l thuyt
3.2.1. Cu hnh 11 nam chm

Hnh 3. 20. Cu hnh 11 nam chm v cc v tr kho st t trng bng phn mm


Ansys Maxwell.
Trc ht, chng ti thc hin m phng li t trng xung quanh cu
hnh 11 nam chm hnh tr nh trong phn 3.1.1 bng phn mm m phng
Ansys Maxwell s dng m hnh t tch. Trong phn ny chng ti kho st
thnh phn t trng Bz ti mt s im c trng nm trn trc nam chm (x =
0 m), nm trn ng thng song song vi trc nam chm ti mp nam chm
(x = 25 m) v nm trn ng thng song song vi trc nam chm, cch nam
chm mt khong 2R (x = 50 m) theo cc khong cch d khc nhau (hnh
3.20). Kt qu thu c c biu din bng cc th trong hnh 3.21. th
trong hnh 3.21a cho thy gi tr ca t trng Bz ti cc im nm trn trc ca
nam chm gim khi khong cch vi b mt nam chm tng. Gi tr ca t
trng Bz ti cc im trn ng tip tuyn vi nam chm v song song vi
trc nam chm c mt im cc i (Bz max ~ 75 mT) cao ~ 2.5 m so vi b
mt nam chm (hnh 3.21b). Gi tr ca t trng Bz ti cc im trn ng
55
(a)

(b)

(c)
Hnh 3. 21. Thnh phn t trng Bz c m phng ti cc im nm trn trc nam
chm cch mt trn nam chm mt khong d (a), ti cc im nm trn ng thng
qua mp nam chm v song song vi trc nam chm cch mt trn nam chm mt
khong d (b), ti cc im nm trn ng thng song song vi trc nam chm v
cch trc nam chm mt khong 2R (c).

56
x = 50 m tng dn trong di khong cch d ang xt. C th thy rng, cc kt
qu m phng thu c trong phn ny l hon ton tng ng vi cc kt qu
m phng nhng v tr tng ng trong cu hnh 11 nam chm phn
3.1.1.
Bng 3. 2. So snh gi tr ca t trng Bz tnh ton c bng m hnh dng v m
hnh t tch vi gi tr Bz m phng c bng cc phn mm ti mt s im nm trn
trc ca nam chm hnh tr dy 5 m, ng knh 50 m v t d 1.2 T dc theo
trc nam chm.

d Bz tnh ton l thuyt (mT) Bz m phng bng phn mm


(m) (mT)
M hnh t M hnh MacMMems Ansys Maxwell
tch dng
0 117.66 117.66 117.53 111.85

10 85.43 85.43 85.45 81.00

20 49.15 49.15 49.15 46.42

so snh kt qu m phng thu c vi kt qu tnh ton l thuyt


bng m hnh t tch chng ti s dng cng thc 2.31 tnh gi tr t
trng thnh phn Bz ti mt s im nm trn trc nam chm v cch mt trn
nam chm mt khong d.

p dng cng thc trn vo cu hnh nam chm ca chng ti, vi 0M l


cm ng t d BR theo trc z ca nam chm, L l chiu cao ca nam chm v (z
+ 5) chnh l khong cch d tnh t mt trn nam chm (v trong m hnh 3.20
gc ta O nm tm mt di ca nam chm). Nh vy, t trng thnh
phn Bz tnh c ti mt s im nm trn trc nam chm l:
+ d = 0 m, tc z = 5 m:

+ d = 10 m, tc z = 15 m:

+ d = 20 m, tc z = 25 m:

57
Bng 3. 3. So snh cc gi tr Bz ti mt s im trn b mt nam chm thu c bng
phn mm m phng.

Ta x cao d T trng Bz (mT)


(m) (m) Ansys Maxwell MacMMems Sai s (%)

0 111.85 117.53 4.8

10 81.00 85.45 5.2

0 20 46.42 49.15 5.5

40 14.60 15.61 6.5

100 1.13 1.59 29

0 -99.69 68.43 245

10 30.71 32.60 5.8

25 20 19.76 20.49 3.5

40 8.03 9.00 10.7

100 0.94 1.36 30.8

0 -10.24 -10.06 1.7

10 -6.75 -6.31 6.9

50 20 -2.50 -1.99 25.6

40 0.87 1.47 40.8

100 0.43 0.87 50.5

Nh vy, c th thy cc kt qu tnh ton ny hon ton ph hp vi cc


kt qu tnh ton bng m hnh dng tng ng v kt qu m phng bng
phn mm MacMMems trn (bng 3.2).
T bng 3.2 chng ta thy rng cc kt qu m phng c bng phn
mm Ansys Maxwell sai s trung bnh khong 5.9% tr mt s v tr c bit so
58
vi cc kt qu m phng c bng phn mm MacMMems v cc kt qu tnh
c t m hnh l thuyt. S sai khc ny khng c th do vic quy nh cc
thuc tnh vt l cho nam chm trong phn mm l cha thc s chnh xc, cng
nh cc khong chia li trong phn mm l cha ph hp tt.
Bng 3.3 cng cho thy hu ht cc gi tr Bz thu c bng cc phn
mm m phng sai khc nhau trung bnh 5.9%. iu ny cho thy gia cc phn
mm c mt s sai khc nht nh ph hp vi thc t rng cc phn mm m
phng c xy dng trn cc m hnh l thuyt khc nhau. Tuy nhin s sai
khc ny hon ton c th thu hp li bng cch iu chnh cc thng s tnh
ton ph hp cho qu trnh m phng. Nh vy nh c cc phn mm m phng
cng nh cc gi tr tnh ton l thuyt chng ta hon th c th xc nh c
t trng, s bin thin t trng do nam chm sinh ra ti nhng im xc nh
vi chnh xc cao.
3.2.2. Cu hnh 22 nam chm
Tip theo chng ti s dng phn mm m phng Ansys Maxwell m
phng t trng trong khng gian xung quanh cu hnh 22 nam chm nh phn
3.1.2. Cc kt qu thu c c th hin di dng cc hnh nh 3D trong hnh
3.22. Hnh 3.22a m phng khng gian t trng ngay st b mt nam chm
(khong cch d = 0 m). Hnh 3.22b m phng mt mt ct ca khng gian t
trng theo mt phng Oyz. T hnh nh thu c, chng ta thy rng t trng
ch yu tp trung mp ca cc nam chm v nhanh chng suy gim khi i xa
nam chm theo mi hng. Trong khng gian xung quanh cc nam chm (d = 0
m) tn ti mt vng t trng n nh (Bz ~ 0 T) l khu vc gia bn nam
chm, ph hp vi thc t cc ng sc t l cc ng cong khp kn ngay
st b mt nam chm nn cc ng sc ny khng th i ra xa mp nam chm.
T cc kt qu m phng thu c, chng ti rt ra gi tr ca t trng Bz ti
mt s im trong cu hnh ny so snh vi cc kt qu tng ng trong phn
3.1.2. Kt qu so snh c trnh by trong bng 3.3 v cho thy s ph hp ca
cc kt qu m phng c bng hai phn mm.

59
(a)

(b)
Hnh 3. 22. Khng gian t trng ngay st b mt cc nam chm (a), mt mt ct ca
khng gian t trng dc theo khong cch d t b mt nam chm (b).
Bng 3. 4. So snh cc gi tr Bz ti mt s im trn b mt nam chm trong cu hnh
22 nam chm thu c bng phn mm m phng.
60
T trng Bz (mT)
Ta x cao d
Ansys Sai s (%)
(m) (m) MacMMems
Maxwell

0 108.27 115.18 6

10 78.97 83.27 5.2

0 20 45.04 47.30 4.8

40 13.75 14.63 6.1

100 1.38 1.97 30

0 -109.07 64.51 170

10 29.08 29.11 0.1

20 17.22 17.84 3.5


25
40 7.31 8.08 9.5

100 1.41 2.02 30.1

0 -21.34 -21.54 0.93

10 0.3
-13.92 -13.96

50 20 -5.27 -5.14 2.5

40 30.9
1.57 2.27

100 1.29 1.97 4.6

KT LUN
61
Trong lun vn thu c mt s kt qu nghin cu chnh nh sau:
- Nghin cu cc m hnh l thuyt dng tng ng v m hnh t tch
tnh ton t trng trn b mt vt liu t v nghin cu cc phn mm m
phng t trng tng ng.
- M phng s phn b t trng trn b mt cc nam chm t cng dng
tr NdFeB c cu trc micro-nano, kho st nh hng ca s lng vi nam
chm, so snh gia cc kt qu m phng s dng cc m hnh cng nh kim
tra bng vic tnh ton l thuyt.
- Khi tng s lng nam chm th s c thm cc vng t trng bin
thin vi gi tr cc tiu gim trong khi gi tr cc i t thay i, gip cho s
bin thin ca t trng, c th s hng (trong cng thc tnh lc t) tng ln.
Kt qu nghin cu cho thy c th t gi tr ~ 6105 T2/m ti nhng v tr
ngay st mp cc vi nam chm. Thnh phn Bz ca t trng v s bin thin
ca thnh phn ny theo phng song song vi b mt nam chm (dBz/dy) gim
mnh nhng cao cch b mt nam chm (d) ln, cn bin thin ca Bz theo
phng vung gc vi b mt nam chm (dBz/dz) thay i t nhng cao d
khc nhau. Nh vy bng vic tng s lng nam chm s cho php thnh phn
lc t to ra theo phng vung gc vi b mt cc nam chm c duy tr
nhng cao cch b mt nam chm ln, l iu kin cn ht hoc y cc
i tng t tnh ngay c khi i tng xa b mt cc nam chm.

62
TI LIU THAM KHO

Ting Vit
[1]. Nguyn Ph Thy, Vt l cc hin tng t, NXB i hc Quc gia H
Ni, 2003.
[2]. Thn c Hin, Lu Tun Ti, T hc v vt liu t, NXB i hc Bch
khoa H Ni, 2006.
Ting Anh
[3]. O. Akdogan , W. Li and G. Hadjipanayis, High coercivity of Alnico
thin films: effect of Si substrate and the emergence of a novel
magnetic phase, Journal of Nanoparticle Research, Vol. 14, 2012, pp.
891.
[4]. G. Allaedinil, S. M. Tasirinl, P. Aminayi, Magnetic properties of cobalt
ferrite synthesized by hydrothermal method, Int Nano Lett, Vol. 5, 2015,
pp. 183186.
[5]. H. Allag, J. Yonnet, M. E. H. Latreche, H. Bouchekara, Coulombian
model for 3D analytical calculation of the torque exerted on cuboidal
permanent magnets with arbitrarly oriented polarizations, International
Conference on Linear Drives for Industry Applications, Vol. 8, 2011, pp.
102-108.
[6]. L. Castaldi, H. A. Davies, M. R. J. Gibbs, Growth and
characterization of NdFeB thin films, Journal of Magnetism and
Magnetic Materials, Vol. 242-245, 2002, pp. 1284-1286.
[7]. O. Chadebec, J. L. Coulomb, F. Janet, A review of magnetostatic
moment method, IEEE Transactions on magnetics, Vol. 42, 2006,
pp. 515-520.
[8]. S. Chigirinsky, M. Kustov, N. Dempsey, C. Ndao and R.
Grechishkin, Calculations and measurements of the magnetic field
of patterned permanent magnetic films for lab on chip applications,
Rev. Adv. Mater. Sci., Vol. 20, 2009, pp. 85-91.
[9]. J. A. Christodoulides, Y. Zhang, G. C. Hadjipanayis, I. Panagiotopoulos
and D. Niarchos, CoPt and FePt Thin Films For High Density Record

63
Media, NATO Advanced Research Workshop on Nanostructured Films
and Coatings, Series 3, Vol 78, 2004, pp. 1326-1348.
[10]. A. Itabashi, M. Ohtake, S. Ouchi, F. Kirino and M. Futamoto,
FePd, FePt, and CoPt alloy epitaxial thin films with flat surface
grown on MgO(111) substrate, EPJ Web of Conferences, Vol. 75,
2014, pp. 6008.
[11]. S. Jeong, Y. Hsu, D. E. Laughlin, and M. E. McHenry, Magnetic
Properties of Nanostructured CoPt and FePt Thin Films, IEEE
Transactions On Magnetic, Vol. 36, 2000, pp. 2336-2338.
[12]. A. L. Gassner, M. Abonnenc, H. X. Chen, J. Morandini, J. Josserand, J. S.
Rossier, J. M. Busnel and H. H. Girault, Magnetic forces produced by
rectangular permanent magnets in static microsystem, Lab Chip, Vol. 9,
2009, pp. 2356-2363.
[13]. T. Mikolanda, M. Kosek, A. Richter, 3D magnetic field measurement,
visulisation and modeling, Proceeding of the 7th International
Conference, Slovakia, 2009, pp. 306-309.
[14]. F. Mohseni, M. J. Pereira, N. M. Fortunato, J. S. Amaral, Magnetic and
morphologic properties of Alnico-based rare-earth free permanent
magnets, Journal of Physics D: Applied Physics, Vol. 46, 2013, pp. 23.
[15]. V. Neu, S. Melcher, U. Hannemann, S. Fhler and L. Schultz, Growth,
microstructure and magnetic properties of highly textured and highly
coercive Nd-Fe-B films, Phys. Rev, Vol. 70, 2009, pp. 144418.
[16]. D. Ptroi, M. M. Codescu, E. A. Ptroi, V. Marinescu, Structural and
magnetic behaviour of DC sputtered Alnico type thin films,
Optoelectronics and Advanced Materials Rapid Communications, Vol.
5, 2011, p. 1130-1133.
[17]. H. L. Rakotoarison, J. P. Yonnet, Using Coulombian Approach for
Modeling Scalar Potential and Magnetic Field of a Permanent
Magnet With Radial Polarization, IEEE Transactions On Magnetics,
Vol. 43, 2007, pp. 1261-1264.
[18]. R. Ravaud and G. Lemarquand, Synthesis about Analytical Approaches
for Calculating the Magnetic Field Produced by Permanent Magnets of
Various Topologies, PIERS Proceedings, Cambridge, Vol. 11, 2010,
pp.281-297.
64
[19]. R. Ravaud and G. Lemarquand, Magnetic field produced by a
parallelepipedic magnet of various and uniform polarization, Progress In
Electromagnetics Research, Vol. 98, 2009, pp. 207-219.
[20]. I. B. Roth, Characterization and use of permanent magnets with
extremely strong field gradients, Master thesis, Department of Physics
University of Oslo, 2009, pp. 125.
[21]. K. E. B. Serrona, A. Sugimura, R. Fujisaki, T. Okuda, N. Adachi, H.
Ohsato, I. Sakamoto, A. Nakanishi, M. Motokawa, Magnetic and
structural properties of NdFeB thin film prepared by step annealing,
Materials Science and Engineering Vol. 97, 2003, pp. 59-63.
[22]. K. E. B. Serrona, A. Sugimura, N. Adachi, T. Okuda, H. Ohsato, and I.
Sakamoto, Structure and magnetic properties of high coercive NdFeB
films with a perpendicular anisotropy, Appl. Phys. Lett. Vol. 82, 2003,
pp.1751.
[23]. A. B. Shinde, Structural and Electrical Properties of Cobalt Ferrite
Nanoparticles, (IJITEE) ISSN, Vol. 3, 2013, pp. 2278-3075.
[24]. P. D. Thang, G. Rijnders, D. H. A. Blank, Stress-induced magnetic
anisotropy of CoFe2O4 thin films using pulsed laser deposition, Journal
of Magnetism and Magnetic Materials, Vol. 310, 2007, pp. 2621-2623.
[25]. P. Vaishnava, U. Senaratne, E. Buc, P. Boolchand, Magnetic properties
of cobalt-ferrite nanoparticles embeddedin polystyrene resin, Journal Of
Applied Physics Vol. 99, 2006, pp.702-708.
[26]. A. Walther, C. Marcoux, B. Desloges, R. Grechishkin, D. Givord, N. M.
Dempsey, Micro-patterning of NdFeB and SmCo magnet films for
integration into micro-electro-mechanical-systems, Journal of
Magnetism and Magnetic Materials, Vol. 321, 2009, pp. 590-594.

65

You might also like