Bi ging K thut in t

CHNG III: CC NG DNG C BN

1. Mch chnh lu bn k (half ware rectifier)
T tn hiu xoay chiu ca khu vc (220V 50Hz) hay thp hn (qua bin th), dng
diode vi tn cht ch dn in theo mt chiu (P-N) i in thnh DC.
Vi

D
t

Vi R Vo
V0

Bn k +: D phn cc thun nn dn, nn dng in I L qua ti RL cng c gi tr s

bin thin theo bn k + ca ngun. Nn in th ra trn ti V L cng c dng bn k + ca
V2.

Bn k -: D phn cc nghch nn khng dn, do khng c dng qua ti I L, nn VL

= 0.

Kt qu: l dng chy q ua ti IL, v in th trn ti V L ch cn li bn k +, nn

c gi l mch chnh lu bn k.

in p trn ti:

1 V
VDC
2 0
Vm sin td t cos t 0 m 0.45Vhd

Tng t cho dng trn ti:

Im Vm V
I DC 0.45 RMS
RL RL

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Bi ging K thut in t

2. Chnh lu ton k (Full ware rectifier)

Bin th y l bin th c chu gia lm im chung, in p 2 u ngc pha
nhau so vi im gia. Vi

D t

Vi
Vi
R
D t

VL

- Bn k + ti A: D1 dn, D2 ngng => dng I A chy qua D1 qua R tr v im gia

bin p.
- Bn k ti A (chnh l bn k + ti B): D1 ngng, D2 dn => dng I B chy qu a
D2 qua R v im gia ca bin p.
Do dng qua ti chnh l tng ca 2 dng I A v IB.
in p trung bnh trn ti:
Vm
VDC 2 0.636V 0.9V
m RMS

Tng t cho dng trn ti:
2Im 2Vm V
I DC 0.9 RMS
RL RL
Nhn xt: gn sng ca mch chnh lu ton sng gim so vi chnh lu bn k.
3. Chnh lu cu.
Thay v phi s dng bin p c chu gia, +
ta khng cn m ch cn sp xp cc diode Vi
c th dn in c 2 bn k.
-
- Bn k u V A > Vc: D1D3 dn, D2 R

D4 tt => dng chy A->D1->R->D3->C.

- Bn k sau V A < Vc : D1 D3 tt, D2
D4 dn => dng t C ->D2->R->D4->A.
Cng thc tnh dng v p nh 2 diode

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4. Mch lc
D

VL
Vi
R
D
t

hiu ra trong cc mch chnh lu c gn sng kh ln v V DC thp (ton k V DC

= 0.636 Vm). Do ci thin gn sng ngi ta mc thm cc mc h lc.

ng ra, khi D1 dn, dng qua ti R v np cho t C. nh A, in th gim, t lp

tc x in qua ti vi thi gian T = R L.C. Khi t x n B, D2 dn v li np cho t ln
nh A, c th tip tc. Kt qu l dng sng ra nh hnh v c V DC tng v gn sng
gim so vi lc cha c t lc.

5. Mch xn
Mch xn cn gi l mch gii hn bin tn hiu, trong tn hiu V 0 lun t l vi
tn hiu vo V i nu V i cha vt qu mt gi tr ngng cho trc V R, cn khi Vi vt qu
mc ngng th tn hi u ra V0 lun gi mt gi tr khng i.

Cc linh kin tch cc c s dng trong mch xn thng l diode, transistor, n

in t cng nh cc vi mch tuyn tnh. Tuy nhin mch xn dng diode c s dng
rng ri hn v mch cu to n gin, tin c y cao.

Cc mch xn dng diode:

Mch ni tip: ti ni tip diode.

Mch song song: ti song song vi diode.

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Gi thit diode l tng.

V = 0
rf =0 (in tr thun)
IS = 0 (dng r, dng ngc)
rr = (in tr ngc)

Mch xn trn:

Mch ni tip Mch song song

Nu vi > VN Nu vi VN
Diode tt Diode dn
v0 = VN v0 = VN
Nu vi VN Nu vi < VN
Diode dn Diode tt
v0 = v i v0 = v i

Mch xn di:

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Mch ni tip Mch song song

Nu vi < VN Nu vi VN
Diode tt Diode dn
v0 = VN v0 = VN
Nu vi VN Nu vi > VN
Diode dn Diode tt
v0 = v i v0 = v i

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CHNG IV: MCH KHUCH I

1. Khi nim v mch khuch i
1.1 Khi nim mch khuch i

Khuch i l qu trnh bin i mt i lng (dng in hoc in p) t bin

nh thnh bin ln m khng lm thay i dng ca n.

Tu theo dng ca tn hiu cn khuch i m ngi ta phn ra: b khuch i tn

hiu mt chiu (tng qut hn: tn hiu bin thin chm) v b khuch i tn hiu xoay
chiu. B khuch i th 2 li c chia lm 2 loi: tn s thp (m tn) v b khuch i
tn s cao.

1.2 Cc thng s c trng ca mc h khuch i

vL
- H s khuch i in p: Av l t s gia in p ra VL v in p vo VS.
vS

iL
- H s khuch i dng in: Ai .
ii

P0 VL I L
- H s khuch i cng sut ( li cng sut): A p
Pi Vi I i

vi
- Tng tr ng vo: Z i
ii

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Bi ging K thut in t

- Tng tr ng ra: Z o.

Cht lng b khuch i cng tt khi Z i cng ln v Z o cng nh.

.1.3 Cc thng s Hybrid

Phng trnh mng 4 cc vit theo thng s Hybrid :

v1 = h11i1 + h12v2

i2 = h21i1 + h22v2

Thay cc thng s mng 2 ca bng cc thng s h ca transistor :

v1 = h i i 1 + h r v2

i 2 = h f i 1 + h 0 v2

Trong cc thng s h ca transistor c nh ngha nh sau :

v1
hi : tr khng vo ngn mch
i1 v2 0

v1
hr : li in p ngc khi h mch
v2 i1 0

i2
hf : li dng thun ngn mch
i1 v2 0

i2
ho : tng dn ng ra h mch
v2 i1 0

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ng dng vi cch mc khc nhau (EC, BC, CC) m ch th 2 c ch nh. V d :

hoe, hie,

2. Cc khi nim c bn ca mch khuch i mt tng

2.1 im lm vic tnh v ng ti mt chiu

Xt mt tng khuch i dng BJT mc EC nh hnh 3.3.

BJT c kh nng khuch i tn hiu, chuyn tip J E phn cc thun cn chuyn

tip JC phn cc nghch. mch ny, ngun E 1 cng in tr R B to ra in p mt chiu
lm cho chuyn tip JE phn cc thun mt mc nht nh, ngha l lm cho dng I B v
in p VBE trong mch vo c nhng gi tr I BQ, VBEQ no . Trn c tuyn vo ca
BJT, cp gi tr I BQ v VBEQ l to im Q, gi l im lm vic tnh ng v o ca BJT.
Ngun E 2 cng in tr R C to ra in p mt chiu lm phn cc nghch chuyn tip J C,
khin cho dng IC v in p V CE ng ra c nhng gi tr xc nh: I CQ v VCEQ. Cp gi
tr I CQ v VCEQ s xc nh nn mt im Q, gi l im lm vic t nh ng ra.

Nh vy vi mt BJT cho, ngun E 1, E2 cng cc in tr phn cc RB, RE s

quyt nh gi tr tc thi ca dng in v i n p trn BJT, ni cch khc chng s quyt
nh im lm vic tnh ca mch.

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Dng IB v p VBE lin h vi nhau the o c tuyn tnh ca BJT (ng s 1 hnh
3.4). Mt khc theo nh lut Kirchoff II:

E1 = IBRB + VB
VBE E1
=> I B
RB RB

Giao im ca 2 th ni trn xc nh im lm vic tnh Q ca ng ti mch

vo.

Tng t, trong mch ra, dng I C v p VCE c quan h vi nhau theo c tuyn ra
ca BJT (ng s 1 hnh 3.5 ng vi dng I B = IBQ). Theo nh lut Kirchoff II:

E2 = ICRC + VCE
1 E
=> I C VCE 2
RC RC

Giao im ca 2 th t rn xc nh im lm vic tnh Q ca ng ti mch ra.

Nh vy im Q trn c tuyn vo v ra l mt v l duy nht. Vi tng khuch i

ang xt, cc cp gi tr (IB, VBE) hoc (I C v VCE) tho mn nh lut Kirchoff II trong
mch vo hoc ra s xc nh nn ng ti mt chiu ca mch vo hoc ra. Giao i m
ca ng ti mt chiu vi c tuyn tnh tng ng ca BJT chnh l im lm vic tnh
m to ca n l gi tr dng v p tc thi trong mch.

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1 1
dc ca ng ti AB l tg ; ca ng ti MN l tg . Nh vy,
RB RC

mt cch tng qut, dc ca ng ti mt chiu c gi tr tuyt i bng nghch o

ca in tr tng ng.

2.2 Trng thi ng th thi gian

Trng thi lm vic ca BJT hoc FET khi c tn hiu xoay chiu a n ng vo
(do xut hin in p xoay chiu hoc dng in xoay chiu ng ra) gi l trng thi
ng. Lc ny tn hiu xoay chiu V s xp chng ln in p phn cc vn c trng thi
tnh. Trn hnh 3.6 v 3.7 minh ho th thi gian ca cc dng trng thi tnh v cc
dng tng ng trng thi ng khi V s hnh sin.

Ta thy dng in tc thi trng thi ng l tng i s ca 2 thnh phn: thnh

phn mt chiu (ng vi trng thi tnh) v thnh phn xoay chiu do tn hiu Vs gy ra.

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2.3 ng ti xoay chiu

ng ti MN hnh 3.5 l tp hp tt c cc v tr c th c ca im lm vic tnh.

Ni cch khc mi im trn ng ti MN xc nh mt cp gi tr tng ng ca dng
IC v in p V CE.

i vi trng thi ng, khi c ngun tn hiu xoay chiu Vs tc ng, mi cp gi tr

tng ng ca dng vo p tc thi iC(t), vCE(t) trn ng ra s xc nh nn trn c tuyn
ra mt im lm vic ng. Khi bin V s thay i, im lm vic ng by x dch trn
mt qu o no c gi l ng ti xoay chiu.

v CE ~
in tr ti i v i tn hiu xoay chiu ca mch ra: R ~ . Vy dc ca
i C~
1
ng ti xoay chiu l: tg ; trong l gc gia ng ti xoay chiu v trc
R~

honh.

Mt khc, c th coi trng thi tnh nh l mt trng hp ring (ng vi bin V s

= 0) ca trng thi ng. Khi bin V s thay i, im lm vic ng di ng trn ng
ti xoay chiu. Khi bin V s = 0, im lm vic ng tr v trng vi im lm t nh.
iu ny chng t im lm vic tnh cng ch l mt im lm vic c bit ca ng
ti xoay chiu. Nh vy c ng ti mt chiu ln xoay chiu u cha im lm vic
tnh, hay ni cch khc, im lm vic tnh Q l giao im ca 2 ng ti ny.

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2.4 Cc ch l m vic ca phn t khuch i

Tu theo v tr im lm vic tnh trn ng ti xoay chiu, ngi ta phn bit cc

ch lm vic sau y:

2.4.1 Ch A

Khi chn in p phn cc sao cho im lm vic tnh Q nm khong gia on

MN trn ng ti xoay chiu (trong M v N l giao im ca ng ti xoay chiu vi
c tuyn ra ng vi dng cc i I Bmax v dng cc tiu I Bmin) th ta ni phn t khuch
i lm vic ch A.

c im ca ch A:

- Khuch i trung thc, t mo phi tuyn.

- Dng tnh v p tnh lun khc 0, ngha l ngay trong trng thi tnh, tng khuch
i tiu hao mt nng lng ng k. Bin dng v p xoay chiu ly ra (I Cm, VCEm)
ti a ch bng dng v p tnh. V vy ch A c hiu sut th p, thng thng hiu sut
ti a ca lp A l 25%.

- Ch A thng dng trong cc tng khuch i tn hiu nh.

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2.4.2 Ch B

Nu chn in p phn cc sao cho v tr im tnh Q trng vi im D hoc im N

th phn t khuch i lm vic ch B l tng. c im ca ch ny nh sau:

- Khi dng in vo (hoc in p vo) l hnh sin, th dng in ra v in p ra ch

cn na (hoc gi na) hnh sin, ni cch khc: mo phi tuyn trm trng.

- trng thi tnh, dng ICQ 0, do nng lng tiu th bi tng khuch i rt
nh. Ch trng thi ng, dng in trung bnh I C mi tng dn theo bin tn hiu vo.
Do nng lng tiu th cng t l vi bin xoay chiu tn hiu xoay chiu ly ra.
Nh vy ch B c hiu sut cao (khong 78.5%).

- Ch thng dng trong cc tng khuch i cng sut (cc tng cui ca thit b
khuch i). khc phc mo phi tuyn, n i hi mch phi c 2 v i xng, thay
phin nhau lm vic trong 2 na chu k.

Trn thc t, ngi ta cn dng ch AB (trung gian gia ch A v ch B):

im Q chn pha trn im N v gn im ny. Lc pht huy c u im ca mi
ch , gim bt mo phi tuyn nhng hiu sut km hn ch B.

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2.4.3 Ch D

Ch ny cn c gi l ch kho hay ch ng m. Ngoi ch khuch

i, BJT hoc FET cn c th lm vic nh mt ci ng ngt in (ch kho). Lc
ny, tu theo xung dng in vo (hoc in p vo) m BJT lm vic 1 trong 2 ch
i lp: trng thi kho (trng thi tt) khi Q nm pha di im N, trng thi dn bo
ho (trng thi m) khi Q nm pha trn im M, gn im C. y l ch BJT lm vic
vi tn hiu xung.

3. Cc mch phn cc cho BJT

3.1 Dng ngun 1 chiu V BB

nh lut Kirchoff II cho vng c cha V BB:

-VBB + RBIB + VBE + REIEQ = 0

M ICQ IEQ, ICQ = IBQ

I CQ
-VBB + RB + VBE + REICQ = 0

V BB V BE
I CQ
R
RE B

nh lut Kirchoff II cho vng t VCC n mass:

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-VCC + RCICQ + VCEQ + REICQ = 0

1 1
=> ICQ = VCEQ VCC
RC R E RC R E

y chnh l phng trnh ng ti 1 chiu (DCLL) . I CQ n nh, phi chn RE

1
>> RB/ . Thng chn R B ( 1) R E ICQ n nh.
10

3.2 Dng in tr RB

nh lut Kirchoff II t V CC -> RB -> mass:

I CQ
-VCC + RB + VBE + REICQ = 0

VCC VBE
=> I CQ
RE RB /

nh lut Kirchoff II t V CC -> RC -> mass:

-VCC + RCICQ + VCEQ + REICQ = 0

=> VCEQ = VCC (RC + RE)ICQ

1 1
=> ICQ = VCEQ VCC
RC R E RC R E

y l phng trnh ng ti 1 chiu (DCLL) ca mch.

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3.3 Dng in tr phn p

Theo nh l Thevenil:

R1 R2
RBB = RT = R1//R2 =
R1 R2
R2
VBB = VT = Uh = VCC
R1 R2

Theo cch tnh ton tng t nh mch ph n cc dng in p V BB, ta c:

VBB VBE
I CQ
R
RE B

1 1
ICQ = VCEQ VCC
RC R E RC R E

3.4 Phn cc nh hi tip t Collector

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mch ny, in tr R B dn in p t ng ra (cc collector) v a ngc v ng

vo (cc base):

VBE = VCE IB RB = VCC (IC + IB) RC IB RB

V vy khi nhit lm dng ra I C tng ln th nh hng s tc ng ngc v

ng vo, lm VBE gim v lm I C, ngha l b tr li s bin ng im lm vic do nhit
.

nh lut Kirchoff II cho vng t V CC -> RC -> RB -> mass:

-VCC + RC (IC + IB) + RBIB + VBE = 0

RC RB
=> -VCC + IC(RC + + )=0

VCC V BE
=> IC =
R RC
RC B

VCE = VCC - IERC

Hoc VCE = IBRB + VBE IB RB

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4. Cc mch phn cc choJFET

4.1 Phn cc cho JFET kiu t cp

Cc JFET thng c t phn cc nh in tr R s mc gia ngun v t. Dng

mng ID s h trn in tr mt in p VSM = ID.RS. Chnh in p ny phn cc
nghch cho chuyn tip P N gia cc ca v knh dn, bi v d ng qua RG xp x bng 0
nn im G gn nh ng th vi t.

VGS = - ID RS
VDS = ED ID(RD+ RS)

Ta c th xc nh im lm vic tnh Q bng th. Gi s c tuyn truyn t I D = f(VGS)

ca JFET c m phng bng biu thc:
2
VGS
ID = IDSS 1
VP

1
=> ID = VGS
RS

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Giao im Q ca th ni trn xc nh cp gi tr cn tm: V GSQ v IDQ.

ng ra, gi s c h c tuyn mng ca JFET nh hnh 3.16. Mt khc:

1 ED
ID V DS
R D RS R D RS

ng ti 1 chiu ny th hin bng ng MN. Giao im ca ng ny vi c

tuyn tnh ng vi V GS = VGSQ s xc nh tr s dng v p tnh trong mch ra.

Ngi ta cng c th xc nh im tnh Q theo phng php gii tch, khi bit cc
tham s Vp, IDSS, RD, RS

Qua 1 s php bin i ta c:

2
RS R .I
I DSS I D2 2. S DSS 1 I D I DSS 0

VP VP

y l phng trnh bc 2 i vi I D. Nghim ca n chnh l I DQ. T xc nh

c V GSQ v VDSQ.

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4.2 Phn cc cho JFET kiu phn p

2 in tr R G1 v RG2 to nn b phn p. Do I G 0 nn:

R G2
VGM E D const
R G1 R G 2

Mt khc: V SM = ID. RS.

V vy in p phn cc ng vo xc nh bi: VGS = VGM ID RS

V ng ra: VDS = ED ID (RD + RS)

Dng mng ID xc nh nh sau:

1 V
ID VGS GM
RS RS

Quan h ny (th hin bng ng thng AB) c t trc honh ti honh V GM, ct
VGM
trc tung ti tung ). Giao im ca ng ny vi c tuyn truyn t I D =
RS
f(VGS) l im tnh Q.

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5. Cc mch khuch i tn hiu nh dng BJT hoc FET

Mt thit b khuch i thng bao gm nhiu tng k tip nhau. Cc tng pha u
lm nhim v khuch i in p vi bin tn hiu cn cha ln nn c gi chung
nn c gi chung l tng khuch i tn hiu nh. Chng lm vic ch A. Cc tng
pha cui c nhim v a ra trn ti mt tn hiu cng sut ln, t mo dng v hiu sut
cao, thng gi l tng khuch i cng sut. Di y, chng ta kho st mt tng
khuch i tn hiu nh theo phng php thng dng v phng php gii tch: thay th
mch c th bng s tng ng xoay chiu, ri tin hnh n gin ho, sau tnh ra
cc thng s c trng ca mch. l cc thng s: li p, li dng, in tr vo,
in tr ra i vi tn hiu xoay chiu.

5.1 Mch khuch i dng BJT mc EC

Cng kho st cc thng s xoay chiu ca mch:

H phng trnh thng s h:

vbe hie i B hre vce

iC h fe i B hoe vce

vbe mVT mVT mh feVT

hie
iB vce 0
I BQ I CQ I CQ
Q

nhit phng, VT = 25mV. Chn m = 1

25(mV )
Vy: hie h fe
I CQ (mA)

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iC
h fe (thng s ca BJT)
iB vce 0

vbe
hre
v ce iB 0

iC
hoe (-1)
v ce iB 0

Thng thng hre v hoe c gi tr rt nh ( 10 -4)

Nh vy s tng ng ca transistor sau khi loi b nhng thng s nh

hng khng ng k vo mch :

* in tr vo :

RiE = (RB //hie)

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Thng thng tng khuch i E.C c in tr vo c 600 2k

* in tr ra :

R0E = RC

* li dng :

i L i L iC i B RC RB R R
AiE = h fe h fe iE ~
i S iC i B i S RC R L R B hie hiE R L

* li p :

v L v L i L iC i B RC 1 R
AvE = = RL ( ) h fe . = h fe ~
vi i L iC i B v i RC RL hie hie

* li p ton phn :

v L v L vi R RiE
Atp = h fe ~
v S vi v S hie RS RiE

5.2 Mch khuch i dng BJT mc BC

S tng ng tn hiu nh, vi thnh phn 1/hob c th b qua.

mVT h
hib = ie
I EQ h fe
iC iC h fe
hfb = 1
i E i B (1 h fe ) 1 h fe

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* in tr vo :

RiB = (RE //hib)

* in tr ra :

R0B = RC

* li dng :

i L i L iC i E RC RE R R
AiB = h fb ( ) h fb iB ~
i S iC i E i S RC R L R E hib hib R L

* li p :

vL v i i i RC 1 R~
AvB = L L C E R L ( ) h fb ( ) = h fb
v EB i L iC i E v EB RC R L hib hib

* li p ton phn :

vL v v R RiB
Atp = L EB h fb ~
v S v EB v S hib RiB RS

5.3 Mch khuch i dng BJT mc CC

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Vic xc nh im lm vic tnh tng t mc EC: dng phng php th hoc

gii tch.

vL = vE = (RE//RL) iE = (RE//RL) iB

iE = (1+hfe) iB
'
=> RE (1 h fe ) RE

RL' (1 h fe ) RL

* in tr vo :

RiC = RB//(hie + RE//RL)

* in tr ra :

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tnh tng tr ra ca tng khuch i, v li mch t ng ng ca hnh 2.24a.

RB RS
RoC = RE//(hib + ( // ))
1 h fe 1 h fe

* li dng in :

iL iL vL iB 1 RB
AiC = ( RE' // RL' )
iS v L i B iS RL RB hie ( RE' // RL' )

* li p :

v L v L iB iS RB 1
AvC = ( RE' // RL' )
vi i B i S vi RB hie ( RE // RL ) RS RiC
' '

5.3 Mch khuch i dng JFET mc SC

S tng ng ca mch khuch i tn hiu nh tn s thp ca JFET

Vi r GS = , rDS (xc nh trc).

I DSS VGSQ
gm = 2 1
VP VP

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* in tr vo :

RiS = (RG // ri) RG

Vi r i l in tr vo ca JFET (in tr ca chuyn tip P -N gia ca v ngun)

thng rt ln v chuyn tip ny phn cc nghch (I G 0).

Trn thc t, R iS thng c mt vi M.

* in tr ra :

RoS = (RD // rD) RD

Vi r D l in tr vi phn ng ra ca JFET, thng c gi tr c (0.5 1) M

* li p :

Trng H Giao thng vn ti TPHCM Trang 90

Bi ging K thut in t

vL vL iL iD RD rD
AvS = = RL g m g m ( RD // RL // rD )
v GS i L i D vGS RD RL rD RD // RL

Nu JFET mc theo s mng chun g (D.C) hoc ca chung (G.C) ta vn phn tch
theo phng php tng t. Tng D.C vn c c im v ng dng gn nh mch C.C
ca BJT: in tr vo ln, in tr ra nh li p xp x bng 1 v tn hiu ra ng pha
vi tn hiu vo.

6. Cc dng ghp lin tng

phn trn, chng ta lm quen vi mt s tng khuch i. Hnh thc mch in

ca cc tng ny c th khng ging nhau, s dng linh kin khc nhau, , nhng mt
cch tng qut, ta lun lun coi chng nh nhng mng 4 cc (hai cc vo v hai cc ra).
Mi mng c c trng bi cc thng s c bn: tr khng vo, tr khng ra, li
dng, li p, v thng thng, cc thng s ny thay i theo im lm vic v theo
tn s tn hiu.

Nh vy tn hiu ra ca tng trc ng vai tr tn hiu vo ca tng sau, in tr vo

ca tng sau lm nhim v ti ca tng trc. li chung ton thit b s l tch ca
li tng tng :

VON VO1 V02 V03 V

Av on AV 1 AV 2 AVn
Vi1 V I 1 V01 V02 Von 1

Trng H Giao thng vn ti TPHCM Trang 91

Bi ging K thut in t

Linh kin thc hin s ghp tng c th l t in, in cm, bin p, D i dy s

kho st tng dng ghp.

6.1 Ghp in tr - in dung

Kiu ghp ny c ch tnh ca cc tng c lp vi nhau.

Vic kho st b khuch i nhiu tng (xc nh im tnh, tnh cc thng s c

bn) s tin hnh ln lt cho tng tng, theo t t t sau ra trc. tnh ton thng s
xoay chiu ca cc tng khuch i tn hiu nh, ta vn dng phng php quen thuc:
u tin, xt phm vi tn s trung bnh, lp s tng ng n gin ho (coi cc t
ni tng nh ngn mch, b qua cc in dung k sinh) ri tnh ra cc thng s cn
thit. Sau xt cho phm vi tn s thp (tr khng cc t khng cn ln) v phm vi tn
s cao (xt vi vai tr cc t k sinh v s thay i theo tn s ca cc tham s transistor
nh , ).

6.2 Ghp trc tip

khuch i cc tn hiu mt chiu hoc tn s rt thp (tn hiu bin thin chm)
khng th ghp tng bng t in hoc bin p m ngi ta ni trc tip ng ra tng trc
vi ng vo tng sau. Trn hnh 2.30 l mt v d v kiu ghp ny.

Trng H Giao thng vn ti TPHCM Trang 92

Bi ging K thut in t

Ch tnh ca cc tng lin quan vi nhau. Hin tng khng n nh im lm

vic ca tng ny s gy ra s x dch im lm vic ca tng kia v do lm thay i
in p ra. V vy ngi ta thng thc hin hi tip hn ch s tri im tnh va
nu.

Trn mch hnh 2.30, R3 R6 l cc in tr n nh dng tnh ca tng transistor

(hi tip m dng in ni tip). Dng emitter ca Q 2 gy nn in p mt chiu trn R 6.
Chnh in p ny phn cc cho Q 1 (thng qua b phn p R1 R2).

Cch phn cc nh hi tip t Q2 v Q1 nh vy s t ng n nh dng tnh ca cc

transistor. Tht vy, do bn cht ca transistor, khi nhit mi tr ng tng th cc tham
s ICEO, ICBO, , , s tng khin dng IC, IE tng v im lm vic mt n nh. i
vi hnh 2.30, nu nhit lm vic I E2 tng th in p trn R 6 tng, do (thng qua
nhn p R1 - R2) in p phn cc cho Q 1 s tng v dng I C1 tng. Nhng do ghp trc
tip:

VB2 = VC1 = VCC (IC1 + I B2) R4

Cho nn khi IC1 tng th V B2 gim. in p p hn cc ny gim s lm I E2 v IC2 gim,

ngha l hn ch s tng dng tnh ca Q 2 do nhit gy ra.

Nh vy mch ghp trc tip c hi tip trn y c im lm vic kh n nh.

li p ca mch cng kh cao. D dng chng minh c rng:

Trng H Giao thng vn ti TPHCM Trang 93

Bi ging K thut in t

RL 2
Khi R4 >> Ri2 th:AV hfE1 hfE2
Ri1

Trong RL2 l ti ca tng Q 2, Ri1 l in tr vo ca tng Q 1.

6.3 Ghp Darlington

nng cao h khuch i v in tr vo, nhiu khi ngi ta ghp hai (hoc ba)
transistor nh hnh 2.31a. T hp ny ng vai tr nh mt transistor N -P-N (hnh 2.31b),
gi l transistor phc hp hoc transistor ghp Darlington. Ti R L thng mc cc E v
do , trn hnh 2.31, transistor phc hp hot ng nh mt tng khuch i mc C.C.

Ngi ta cng c th ghp tr n transistor P-N-P vi mt transistor N -P-N nh hnh

2.32a. T hp ny ng vai tr nh mt transistor loi P -N-P (hnh 2.32b). Nh vy, trong
cch ghp phc hp, transistor Q 1 ng vai tr quyt nh loi dn in (N -P-N hay P-N-
P) ca transistor phc hp, cn Q2 ch lm nhim v khuch i dng ra.

Trng H Giao thng vn ti TPHCM Trang 94

Bi ging K thut in t

Hy xt mch hnh 2.31a lm v d. Tng Q 2, mc C.C, c in tr vo kh ln:

Ri2 = hiE2 + (1+hfE2) RL hfE2 RL

li dng :

I E2
Ai2 = 1 h fE 2 h fE 2
I B2

p dng mch tng ng ca BJT mc C.C, ta v c mt s tng ng

xoay chiu ca tng Q 1. in tr vo ca transistor phc hp (nhn t cc B 1), xc nh
theo:

1 1 R i2
ri h iE1 h fE1 1 // R i 2 h fE1 // R i 2 h fE1
h OE1 h OE1 1 R i 2 h OE1

1
y do Ri2 kh ln nn khng th b qua vai tr mc song song ca thay gi
h OE1

tr gn ng ca ca R i2 ta c:

RL
ri h fE1 h fE 2
1 h fE 2 h OE1 R L

Khi hfE2 . hOE1 RL << 1 th:

Ri hfE1 . hfE2 . RL

Trng H Giao thng vn ti TPHCM Trang 95

Bi ging K thut in t

in tr vo ca mch hnh 2.31, k n c vai tr R B:

Ri = (RB //ri)

Do ri rt ln nn tr s R B ng vai tr quyt nh.

li dng ca t ng Q1

I E1
Ai1 =
IS

Trong :

IE1 = (1+hfE1)IB1

Cn IS xc nh t in p vo:

Vi = IS (RB // ri) = IB1Ri

I B1 ri R r
Cho nn: IS = I B1 B i
(R B ri ) RB

(1 h fE1 )R B
=> Ai1 =
R B ri

Do li dng c ton mch:

RB RB
Ai = Ai1 . Ai2 = (1+hfE2) h fE1 .h fE 2
R B ri R B ri

Nu b qua tc dng phn dng ca R B th li dng ca transistor phc hp s l:

Ai hfE1 hfE2

li p xc nh tng t nh BJT mc C.C:

AV 1

Trng H Giao thng vn ti TPHCM Trang 96