Electronics II Fall 2017

HW#1 (100 points)

Due Date: Sep. 27, 2017 (In Lecture)

1. For this problem we will use Matlab to plot some curves for an NMOS device with the
following parameters: VGS = 1.2V, W = 2.5m, L = 1m. For other constants, refer to the table
above for this assignment. Maximum voltage (VDS, VGS) for the following plots is 3V.
a) (15 points) Plot IDS vs. VDS.
b) (15 points) Plot gDS vs. VDS (Hint: what is the relation between this plot and part a?).
c) (15 points) Now for a fixed VDS = 2V, plot IDS vs. VGS.
d) (15 points) Plot gm vs. VGS (Hint: what is the relation between this plot and plot c?).

2. The p-channel MOSFET shown in the layout in figure 1 is biased at the operating point: VSG =
1V, VSD = 2.5V, VSB= -1V. For this problem, include LD = 0.1m (D: diffusion) in finding the
effective channel length L from the layout. Use PMOS parameters from the table above.
a) (30 points) Find the small-signal parameters gm, gmb, and ro at this operating point.
b) (10 points) Sketch the small signal model of the device.