TOSHIBA 2SK2841 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (x-MOSV) 2SK2841 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm APPLICATIONS yp lOamax 36202. SF 4 © Low Drain-Source ON Resistance: Rpg (oN)=0.42 (Typ.) 4 “3 © High Forward Transfer Admittance : [Yg.|=8.0S (Typ.) 3 | " © Low Leakage Current : Ipgg= 100A (Max) (Vpg=400V) © Enhancement-Mode — : Vj,=2.0~4.0V (Vpg=10V, Ip=1mA) 1. 5I¥Ax, I i a MAXIMUM RATINGS (Ta =25°C) cunscrens om Drain-Source Voltage Ves. 700 v Tle) ‘Drain-Gate Voltage (RGS=20k0) Voor. 400 Vv 1. GATE 3 Gate-Source Voltage Vass 30 V_ |} 2 brain ear sinty De 1D 10 AI} 2. source Drain Current ain Curves Pulse Ipp 40, A” ||sepEC __0-220AB Drain Power Dissipation (Te=25°) |_Pp 80 W_|heray 3048 ‘Single Pulse Avalanche Energy** | Fag 360 | mJ_|rosmmpa a.opip ‘Avalanche Current, TAR 10 A = Repetitive Avalanche Bneray™ FAR 3 | _ms_| Weicht : 20¢ Channel Temperature Toh 150 “C Storage Temperature Range Tag =—55~150 |_C THERMAL CHARACTERISTICS CHARACTERISTIC symBor | Max. UNIT [Thermal Resistance, Channel to Case Run he) | 156 [OW [Thermal Resistance, Channel to Ambient | Reh (ch-a) | 88.8 [°C/W Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. 90V, Starting Teh =25°C, L=6.85mH, Rg=250, Please handle with caution. scion OTOHBA,F oopaly worRng (p,/mpoye, Te Gully ond Ge relay, prosuce, Neverhelen, semconaiqy caves general can SOUTER aru 18 chvere anders of sty, and'to stoi auatons in ch & mafoncion of elute t's FOShea prod ud cate 1 eh human body any of damoge co prop fn devoapng You! srsue tra TOSHIBA’ procot ar ued win species Sperntnsanae eft len tare rods Speci. Abs Baba Yaep mind te precovions and nde ons the eine stmonducterRelsbiy Harabook CORPORATION for any rngements Cf ntl propery or ether cht gf te ed pos ich may rena orm Huse. Ro Heese’ granted i subject to change without nonce oe © He'intormaton conttved he 1998-11-12 15TOSHIBA 2SK2841 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION man. | Typ. |Max.| unrr] (Gate Leakage Current Tass _|Vas= 225, Vpg=0v == se Gate-Source Breakdown Valtage 'V (pr) css|la= 410A, Vpg=0V t%0} — | — | v Drain Cut-off Current Tpss__[Vps=400V, Vas=0V == io ak Drain-Source Breakdown Valtage IV (eR) Ds|Ip=10mA, Veg=0V ao | — | -— |v Gate Threshold Voltage Vin 20; — | 40] Vv Drain-Source ON Resistance | Rpg (ON) — | oa] oss [ a Forward Transfer - = tenes I¥gl | Vps=10V, Ip=6.08 40} so] — | 8 Input Capacitance Cis = [asa = Reverse Transfer rss |Vps=10V, Veg=ov, f=1mz | — | 160] — | pF Capacitance (Output Capacitance Coss — [480 — ‘ ID=5.0A, Rise Time te tov ‘Vour| — | 22] - Vos wwe l Turn-on Time | ton Ry — |} 60] — Switching g =400 ns Time Fall Time Ca “ — | 3] — Vpp=200v VIN ¢ tes e<5ns, Turn-off Time | tof — | Duty =19 ty=10p8 — | 10] — Total Gate Charge (Gate- Q —T ul — ‘Source Plus Gate-Drain) ‘e Vpp#320V, Vgg=10V, c Gate-Source Charge Qe |Ip=10A = is} — | ™ (Gate-Drain Miller”) Charge | Qua = sy = SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION wan. | Typ. | Max. | UNIT] Continuous Drain Reverse _ —|_T wla Pulse Drain Reverse Current | _IDRP. = — [=| #Ta Diode Forward Voltage VpsF_[IpR=i0A, Vas=0V = = =a7[-v Reverse Recovery Time tr |IpR=10A, Vag=0V — [350 — [as Reverse Recovery Charge Qi [dlp /dt= 100 / ys =| 26) — | uc MARKING * Lot Number TYPE [Month (Starting from Alphabet A) Year (Last Number of the Christian Era) T998-11-12_2/5TOSHIBA DRAIN CURRENT Ip ‘ PORWARD TRANSFER ADMITTANCE Ns 2SK2841 1p = Vos 1p ~ vos uBON eR @] | comox sounce ‘entre | ars | Boe i a Wi dl a a a) ee DRAINSOURCR VOLTAGE Vos.) DRAINSOURCE VOLTAGE Ys « . 1p - Vos , Vos ~ Vos couwow sounee s comwox sovRce Vos=20¥ 5 reat 16) || & ‘on | . Ip=104 ‘ r= g | Hfeca-eve z 5 j i 25 ¢ i ae GATESOURCE VOLTAGE Vos > CATESOURCE VOLTAGE. Vos.) al iD Rps(ow) ~ 1p counox souRce es ‘comMON souRcE & ors 7 DRAIN CURRENT Ip «) : i a ORT Tie 30 0 DRAIN CURRENT Ip (A) 1998-11-12 3/5TOSHIBA 2SK2841 . Rps(on) - Te n pp - Vos ‘oxo source 2 a) comnox source gree = |eewe é . 4 ge g 4 ee el g | Z ° Zz os i a” Ns-0, “IV a a (CASE TEMPERATURE. Te C0) DRAINSOURCE VOLTAGE pg.) CAPACITANCE — Vg Vin - Te s ‘couow SOURCE 3 Noon 5 g é 3 mM 3 ul comiow source i ats Ce 5 Abe 3 or onoe Tew 100 oo DRAINSOURCE VOLTAGE. pg.) CASE TEMPERATURE. Te €0) pp et DYNAMIC INPUT OUTPUT won p= Te son CHARACTERISTICS wo s s lcounow source [ = i=i0n & 2 a 2 « ‘Yop=00v] Ine-t00 peg 5 3 Rie 5 g 2 uy te 2 & a 5 i a g z 4 p b= 5 5 |) & 2 ay 2 of b-vos Lf i i i % wT Te a8 CASE TEMPERATURE. Te 0) TOTAL GATE CHARGE @y U0 1998-11-12 4/5TOSHIBA 2SK2841 nth = tw. — & i 5 Far rst Z ote 1007 Tm tom TOR T 10 ruse MH SAFE OPERATING AREA Eas ~ Teh sy : ° wi Baitiue ‘ CHANNEL TEMPERATURE Ta CO) on 5 PULSE Te=25¢ Bypss Curves must be erated linearly |_Vpgs wth icrnge in trpernure. | MA av. TAR, oo ss yoo Boo 300 -15v 4 DRAIN-SOURCE VOLTAGE Yps «W) vo / csr ciRcUrT WAVE FORM Peak TAR=IOA, RG=25 pag) yy. BVDSS_ vpp=s0v, L=5s5an— AS™2*™ Gypss-Vpp) 1998-11-12 5/5