5 & 6

5 & 6

M

. ,
( , ), (cd rom)
. 30% .

(cell) (bit)
( 0 1).

(bits) byte 8 bits.
byte 4 bits nibbles. 4 bits
(4 bits),
nibble (Low Nibble) 4 nibble, (High Nibble).
(word)
bytes
. High Byte Low Byte 16 bits
High Nibble Low Nibble Byte.

:
. .
. (cells).
.
. .
. .

1
 5 & 6

.
. .
. .

(Access time (tacc))

(1)

2
 5 & 6

(1) .

(1 1) (timing
diagram) RAM
( ).
(Cycle time ( ))


.

cells .
4 bits 4
16 16 16 4 bits = 64
bits.
(bits) . 2048
8 2 8 2048 8 bits 2048 * 8 =
16384 bits. 2 .. 1024
= 2^10 Kbyte byte Gbyte
1000 1024 bytes M 1024 * 1024 G 1024 * 1024 *
1024.

3
 5 & 6

(Address Bus)
(Data Bus). address
bus data bus
.

. ()
.
, ,
(control bus).

(bidirectional).


.

. (2).

. (3)

4
 5 & 6

. (4).

chip.
chip
cell. n
2^n . 10
2^10 = 1024 .

, , .
. .. RAM
.

.

5
 5 & 6

. (Random access)


.
. .

. ,
...

:
1. .
2. MOS (Metal oxide Semiconductor) N-MOS P-MOS. Flash
FET FAMOS.
3.
(TTL, MOS)
Bi-MOS.

(Random Access
Memory, RAM) (Read Only Memory ROM).

RAM.

6
 5 & 6

RAM
.

.
ROM
,

.

ROM (Read Only Memory)

MASKED ROM (Masked Read Only Memory)

ROMs
. chip
chip.

7
 5 & 6

Masked ROMs
.

.

PROM (Programmable Read Only Memory)

PROM.
ROM
,
(fuses)
. , PROM
,
. 0
.
ROM PROM ( Kbytes
Mbytes) 80
150ns. -
.

,

. ,
ROM PROM
(BJT), 15ns.

8
 5 & 6

EPROM, EEPROM FLASH

, .

(floating
gate transistor ), (5)

(5)

( Fowler-Nordheim (FN)
tunneling Channel Hot Electron (CHE) injection).
( 20V), ,

(charge pumps).
(threshold voltage VT),
(control gate),
:
(
) VT ,
0 ( )
( ) VT
1 ( ).
,
100.000 1.000.000 .

9
 5 & 6

EPROM (Erasable Programmable Read Only Memory)

,
.
.
UV . :
)
UV
) .
) .

(6) PROM.

EEPROM (Electrical Erasable Programmable Read Only Memory)

EEPROM FLASH
, .
:
1. EEPROM: 8 bit

. eeprom,

.
flash. flash
.

10
 5 & 6

2. EEPROM:
.
.


SPI, I2C, microwire, one wire.

.
24C (24C512), 93CXX, 93C56.

FLASH

EEPROM.
EPROM EEPROM. EPROM
PROM.
.
, , ,
(memory sticks) .

memory stick Flash.

FLASH

FLASH

Flash:

11
 5 & 6

1. NAND Flash
2. H NOR Flash

NAND FLASH
NOR FLASH
.

( )
NAND FLASH ( , memory
sticks ..).
NAND FLASH


Fowler-Nordheim (FN) tunneling. NAND FLASH

.
NAND FLASH -
(BL) (WL). ,
(pages) -
. (7).

12
 5 & 6

(7)

NAND FLASH .
264 (256+8) 528 (512+16) bytes.
( 16 32) (block) 4
8 , (.. 512
).

,
, 7.
,
(page select).
(BL)
, MOS,
.

-.
NAND FLASH
. .

.
NAND FLASH
100%
. -,

13
 5 & 6

. ,
bytes,
.
.
NAND-FLASH
2% .
NOR-FLASH

.
(wordline - WL) (bitline
(8)

(BL).
.
Flash Wear levelling

blocks .
block
blocks
.

(8)

14
 5 & 6

-
,
EPROM, EEPROM, NOR NAND FLASH.

RAM (Random Access

Memory)

RAM SRAM (Static Random Access Memory)

(random access memory RAM)

-
.
.

15
 5 & 6

1. (SRAM)
flip-flops. ,
flip-flops .
2. (DRAM)
, .

(refresh cycles).
,

,

.
SRAM
:
O SRAM ( )
. SRAM
10 20 ns.
SRAM,
.
/ (pipelining).
,
. , SRAM
,
200MHz 2,5ns.
SRAM cache.

SRAM (6T cell)
(4 cell) (9).

16
 5 & 6

(9)

(9) CMOS
,
D flip-flop. flip-flop
.
SRAM -

. 32bytes 2bytes
8 72 bits.
SRAM 100A 5mA
, 40mA
150mA.

RAM (Dynamic Random Access Memory DRAM).

(main memory)
DRAM.

17
 5 & 6

DRAM
. ,
DRAM.
DRAM, 70
80ns.

DRAM

.DRAM :

Asynchronous DRAM: : DRAM

. ,
.

(10)

DRAM (10).

. CS
.
CBL (BL),
CS .
SiO2,

18
 5 & 6

(stacked storage cell),

(trench storage cell).
CS . ,
.
DRAM
(refresh) .
(10)
DRAM. ( 256 512)
BL. BL
(sense amplifier SA).
,
. DRAM
BL. , (SA)
BL. BL, SA
-,
(storage column).
BL .

(WL).
WL (
512 ).
,
. -
(10) DRAM.
DRAM
,
.
/RAS (row address strobe) /CAS (column address strobe).
(low).

, .
,
. DRAM

19
 5 & 6

(DRAM
controllers).
. (11) /RAS
tRAC (row access time)
DRAM.
( )
tRC

(11)

DRAM
CS .
,
.
DRAM (refresh)
.
(
) .

16 128msec.

20
 5 & 6

.
refresh
cycle Ref. ( DRAM Ref.4K
4096 ).
DRAM

(12)

/RAS (RAS-only refresh)

. /RAS
(refresh address).
,
BL (SA).
CS.
, /CAS
.
BL .
/CAS /RAS (CAS-before-RAS
refresh) . /CAS
/RAS ,
.

.
.
(hidden refresh).
/CAS .

21
 5 & 6

/RAS

.


. ,
.
(main memory)
DRAM.
DRAM
.
,
DRAM. DRAM, 70
80ns. /RAS
.
DRAM,
.
(burst mode),

.

(13) .

22
 5 & 6

DRAM .

1. ROR (RAS only Refresh) DRAM

2. CBR (CAS before RAS refresh):

(refresh) .
DRAM,
.
(burst mode),
.
DRAM

FPM DRAM (fast page mode DRAM):

DRAM
( - page) 40ns

EDO DRAM (extended data out DRAM):

. .
25ns.
16 64Mbit.
SDRAM (synchronous DRAM): DRAM,
(clock)
15ns
. SDRAM 64
512Mbit.
DRDRAM (direct Rambus DRAM):
/
. DRDRAM
128/144Mbit
1.25ns/2 bytes ( 1.6GB/s).

23
 5 & 6

DRAM

refresh


(
)

DRAM
, (modules),

. module
:

1. Single In-line Memory Module, SIMM: DRAM

RAM (8 Macs 9 PCs ).
32 .
, . Intel Pentium,
64 , (matched)
,
SIMM .
2. Dual In-line Memory Module, DIMM:
, DIMM
SIMM .
DIMM
SIMM
. SIMM 32 DIMM
64 .

24
 5 & 6

3. Rambus In-line Memory Module, RIMM:

DRAM DIMM
(slot).
4. Small outline DIMM, SO-DIMM: DRAM
DIMM.
laptops, netbooks .. .
5. Small outline DIMM, SO-DIMM: RIMM.

SDRAM

,
.

SDRAM:

1. SDR SDRAM: SDRAM.

.
2. DDR SDRAM: SDRAM
(Double Data Rate).

SDRAM.
.
3. DDR2 SDRAM:

2003.
4. DDR3 SDRAM: SDRAM
.
.
.

25
 5 & 6

5. DDR4 SDRAM: SDRAM

2012.

RAM (Magneto resistive RAM) RAM

RAM RAM, RA
(non volatile),
.
DRAM,
, MRAM
.
.


.
MRAM Freescale.

MRAM.

NOR FLASH
.
,
,
00, 01, 10 11.
FLASH ,
DRAM
.

26
 5 & 6

(14)

FRAM.

(non-volatile memories)
,
(ferroelectric RAM FRAM FeRAM).
FRAM
. FRAM
, 100ns,
msec.
, ,

. ,
100.000.000 ( 100.000
1.000.000 -
). ,
FRAM
.
FRAM
:
,
( ).

27
 5 & 6

Phase change RAM (P-RAM)/PCM

H P-RAM
,
Flash.
Flash.
PCM.
PCM memresistor (memory
resistor) Hewlett Packard. memreristor,
HP,
, , .
H HP memristor
,


(Intel, Numonyx, Samsung). H PCM
.
Flash
.
.
PROM, EPROM.

Flash
.

.
.

28
 5 & 6

.

.
..
4 bits 8 bits


( 4 bits data bus
4 bits)
8 bits.
.
() .
,

CS CE

.
address bus.

N = 2 n
.
. .

block .
.

.

1 2 = 2= .

29
 5 & 6

. 16 4 bits 16 8 bits.

4 bits
data bus 4 .
.

30
 5 & 6

(). 16 8 bits 32 8 bits

(data bus)
.
R/W CS

. 2
4 1 1
AB4 0. 1 00-0F
(00000000 00001111) 2 10-1F (00010000-00011111).


, PLD.

31
 5 & 6

5 6

1.
(TTL ) 1 z
28C16 28C64.
display
buffer (74LS245)
- ...
.
:
1. EEPROM AT28C16 28C64 1 .
2. 74LS93 1 . 74LS393 1 ,
3. 74LS245 1 .
:
5V


5V.
(

.
1.
.
2.
3.
.
4.
.
5.
(Data Bus)

32
 5 & 6

.
6. .
7. .
8. .
1. .

2.

D7 D6 D5 D4 D3 D2 D1 D0 HEX

33
 5 & 6

2. 4 RAM 8 4 bits.
16 8 bits.
.
. NAND.
. . (
)
. . .

34
 5 & 6

. .

(Hex) (Hex)

3. 2 RAM 16 8 bits ROM

8 8 bits.
ROM FFF
RAM.
.
4. 0EC5
. .
.

35
 5 & 6

6.

1.
(TTL )
800 z
28C16. D/A
converter (1).
:
1.EEPROM AT28C16 28C64 1 .
2.74LS93 1 . 74LS393
3.74LS245 1 .
4.D/A Converter ( R-2R)
:
5V


5V.
(

.
1. .
2.
3.
.
4.
.
5.
(Data Bus)
D/A.
6. .
7. .
8.
D/A .

36
 5 & 6

9. D/A 4,096 Volts.

8 bits Data bus 255
4,096 255.

D/A .

(1)

37
 5 & 6

2. 2
1 bit. 4 4 bits.
.
. NOR.
. (
).
. . .
NOR

38
 5 & 6

. .

(Hex) (Hex)

3. ROM 16KBits .
(
).
. .
. .
.
. .
. .

39
 5 & 6

4. 28C16
4 bits Gray.
.

D7 D6 D5 D4 D3 D2 D1 D0 Hex

40
 5 & 6

AT 28C16 AT28C64

74LS93

74LS245

41
 5 & 6

42