O LNG IN BI TP

CHNG I: O IN P V DNG IN

1.1 Mt ampe-k dng c cu o t in c in tr c cu o R(m) =99 v dng lm lch ti a Imax =

0,1mA. in tr shunt Rs = 1. Tnh dng in tng cng i qua ampe-k trong cc trng hp:
a) kim lch ti a
b) 0,5Dm; (FSD = Imax, full scale deviation)
c) 0,25Dm

Hnh B.1.1

Gii:

a) kim lch ti a Dm:

in p hai u c cu o:
Vm=Im.Rm=0,1mA.99=99mV

Vm 9,9mV
IsRs = Vm => Is = = = 9,9mA
Rs 1

Dng tng cng:

I = Is + I = 9,9 + 0,1 = 10mA

b) 0,5Dm:
Im = 0,5 . 1mA = 0,05mA

Vm = Im.Rm = 0,05mA.99 = 4,95mV

Vm 4.95mV
Is = 4.95mA
Rs 1

I = Is + Im = 4.95mA + 0,05mA=5mA

c)0,25mA:
Im = 0,25.0,1mA = 0,025mA

Vm = ImRm = 0,025mA.99 = 2,475mV

Vm 2,475
Io= 2,475V
Rs 1

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O LNG IN BI TP

1.2 Mt c cu o t in c I= 100A, in tr ni khung quay R= 1K. Tnh in tr shunt mc vo c cu

o tr thnh mt ampe-k tng ng vi hnh 1.1.
a) Dm = 100mA = tm o 1
b) Dm = 1A = tm o 2

Gii:
a) tm o 100mA
Vm= ImRm = 100.1 = 100mV

It = Is+ Im => Is = It Im = 100mA 100A = 9,9mA

Vm 100mV
Rs = Is 99,9mA 1,001

b) tm o 1A:
Vm = ImRm = 100mV

Is= It Im = 1A- 100A= 999,9mA

Vm 100mV
Rs= Is 999,9mA 0,10001

1.3 Mt c cu o t in c ba in tr shunt c mc theo kiu shunt ayrton s dng lm ampe-k. Ba in

tr c tr s R1=0,05, R2=0,45, R3=4,5, Rm= 1k, Imax= 50A, c mch o nh hnh sau, tnh cc tr s
tm o ca ampe-k

Hnh B.1.3

Gii:

Ti lch 0,5 Dm

Vs= Imax.Rm= 50A.1k = 50mV

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Vs 50
Is= 10mA
R1 R2 R3 5

It=Is+Im=50A+10mA = 10,05mA; I=10mA.

Kha in C:
Vs= Im(Rm+R3) = 50A.(1k+4,5) = 50mV

Vs 50mV
100mA
Is= R1 R 2 0,5 4,5

Kha in D:
Vs= Im(Rm +R2 +R3) = 50A(1k + 4,5 +0,45) =50mV

Vs 50mV
Is = R1 0,05 1A.I = 50A+1A=1,00005A = 1A

1.4 Mt c cu o t in Imax =100A,in tr dy ni (dy qun) Rm = 1K c s dng lm vn k DC.

Tnh in tr tm o vnk c Vtd= 100V. Tnh in p V hai u vn k khi kim c lch 0,75Dm;
0,75Dm v 0,25Dm ( lch ti a Dm)

Hnh B.1.4
Gii:
V
V = IM (Rs + Rm) => Rs = Rm
Im

Khi V= Vtd=100V => IM = Imax =100A

100V
Rs = 100 A -1K =999K

Ti lch 0,75 Dm
Im = 0,75.100A = 75A

V= Im(Rs+ Rm) 75A(999k +1k)=75V

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Ti lch 0,5 Dm
Im = 50 A

V= 50 A(999 k+1k)=50V

Ti lch 0,25 Dm
V= 25A(999 k+1k)=25V

1.5 Mt c cu o t in c Imax=50 A; Rm =1700 c s dng lm vn k DC c tm o 10V, 50V, 100V.

tnh cc in tr tm o theo hnh sau:

Hnh B.1.5

Gii
Theo hnh a:
V
Rm R1
I max
V 10V
R1 Rm 1700 198,3k
I max 50A
50V
R2 1700 998,3k
50 A
100V
R3 1700 1,9983M
50A

Theo hnh b:
V1 10V
R1 Rm 1700 198,3k
I max 50A
V2
Rm R1 R2
Im
V2 50V
R2 R1 Rm 198,3k 1700 800k
Im ax 50A
V3 V
Rm R1 R2 R3 R3 3 R2 R1 Rm
I max Im
100V
800k 198,3k 1700 1M
50A

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O LNG IN BI TP

1.6 Mt vnk c tm o 5V, c mc vo mch, o in p hai u in tr R2 nh hnh sau:

a) Tnh in p VR2 khi cha mc Vnk.
b) Tnh VR2 khi mc vn k, c nhy 20k/V.
c) Tnh VR2 khi mc vn k, c nhy 200k/V

Hnh B.1.6

Gii:

a) VR2 khi cha mc Vnk.

R2 50k
VR 2 E 12V 5V
R1 R 2 70k 50k

b)Vi vn k c nhy 20k/V.

Rv=5V.20k/V=100k

Rv//R2=100k//50k=33,3k

Rv // R2 33,3k
E 12V 3,87V
VR2= R1 Rv // R2 70k 33,3k

c)Vi vn k c nhy 200k/V

Rv=5V.200k/V=1k

Rv//R2=1M//50k= 47,62k

47,62k
V R 2 12V =4,86V
70k 47,62k 4,86V

1.7 Mt c cu o t in c Ifs= 100A v in tr73 c cu o Rm =1k c s dng lm vnk AC

c V tm o = 100V. Mch chnh lu c dng cu s dng diode silicon nh hnh v, diode c
VF(nh) =0,7V

a) tnh in tr ni tip Rs

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O LNG IN BI TP

b) Tnh lch ca vnk khi in p a vo vnk l 75V v 50V (tr hiu dng-RMS).

c) Tnh nhy ca vn k. Tn hiu o l tn hiu xoay chiu dng sin.

Hnh B.1.7

Gii:

a) Tnh Rs:

y l mch chnh lu ton k nn ta c quan h:

IP(tr nh)= Itb/0,637

Vm (tr nh)= 2V

C cu o c:

100 A
I Fs I tb 100 A I p 157 A
0,637
tac :
1,414Vtd 2VF 1,414Vtd 2V F
Rs Rm
Rs Rm Ip
(1,414.100V ) (2.0,7V )
1k 890,7 k
157 A
b) KhiV 75V
1,414V 2VF (1,414 75V ) (2 0,7V )
I tb 0,637 I m 0,637 0,637
Rs R m 890,7 k 1k
I tb 75A
KhiV 50V
(1,414 50V ) (2 0,7V )
I tb 0,673 50 A
890,7 k 1k
c ) I m 157 A I ( RMS ) 0,707 IP 0,707 157 A 111 A
100V
R 900,9k.
111 A

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O LNG IN BI TP

900,9k
nhy= 9,009k / V
100V

1.8 Mt c cu o t in c Ifs = 50A; Rm = 1700 kt hp vi mch chnh lu bn k nh hnh sau. Diod

silicon D1 c gi tr dng in thun If (nh) ti thiu l 100 A. Khi in p o bng 20% Vtm o , diode
c VF = 0,7V, vn k c Vtm o = 50V.
a) Tnh Rs v RSH
b) Tnh nhy ca Vnk trong hai trng hp: c D2 v khng c D2

Hnh B.1.8

Gii:
a)Tnh Rs v RSH

y s dng chnh lu bn k nn ta c:

Ip=Itb/(0,5.0,673): tr nh trong trng hp chnh lu bn k

C cu o c Ifs = Itb = 50 A=> Im= 50 A/(0,5.0,673) = 157 A(tr nh)

Khi V= 20% Vtd, IF(nh) c gi tr 100 A. Vy khi V= Vtd, IF(nh) c gi tr:

100%
IF 100A 500A
20%
IF I m I SH I SH I F I M 500A 157 A 343A
V p I m Rm 157A 1700 266,9mV
Vm 266,9mV
RSH 778
I SH 343A
1,414Vtd Vm V F
IF
RS
1,414Vtd Vm VF 1,414 50V 266,9mV 0,7V
Rs 139,5k
IF 500A
b)Tnh nhy:

C D2 trong bn k dng, dng qua D1 c gi tr nh: IF=500 A

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O LNG IN BI TP

Trong bn k m, dng qua vnk c gi tr nh:

1,414Vtd 1,414.50V
I 500 A
Rs 139,5k
I hiudung 0,707.500 A 353,5A( RMR)c
50V ( RMR )
Rtng 141,4k
353,5A( RMR )
141,4k
nhay 2,8k / V
50V
Khng c D2:
Trong bn k dng:IF(nh) = 500 A. Trong bn k m: I = 0

Trong chu k ca tn hiu:

Ihiu dng =0,5I F(nh)

Vi I l dng in mch chnh chy qua Rs trong bn k dng.

T 2
1 I F2 ( inh)
( I F sin t ) 2 dt
2
I hiudung
2T 0
4
I 0,5.500A 250A
50V
R 200k
250A
200k
_ nhay : 4k / V
50V

1.9 Mt ampe k s dng c cu o t in c cu chnh lu v bin dng nh hnh v. Bit rng c cu o

c Ifs = 1mA v Rm = 1700. Bit dng c Nth = 500; Ns = 4. Diode cVF(nh) = 0,7V; Rs=20k.
Ampe k lch ti a khi dng s cp Ip = 250mA. Tnh gi tr RL.

Hnh B.1.9

Gii:
Chnh lu ton k nn ta c:
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O LNG IN BI TP

Itb 1mA
Im(tr nh) 0,637 0,673 1,57 mA

in p Em hai u cun th bin dng(tr nh):

Em = (Rm+Rs) + 2VF = 1,57mA(20k + 1700) + 1,4V= 35,5V

Es(tr hiu dng) = (0,707.35,5V) = 25,1V

Dng lm lch ti a c cu o c tr hiu dng I:

I = 11,1Itb = 11,1.1mA=11,1mA

Ta c:
N so 4
I thu I so 250mA 2mA
N thu 500
I thu I q I L I L 2mA 11,1mA 0,89mA; (vi Iq=Iqua c cu o)
Es 25,1V
RL 28,2k
EL 0,89mA

CHNG II: O IN TR

2.1 Cho Eb = 1,5; R1= 15k; Rm =1k; R2 = 1k; Imax = 50A. Xc nh tr s c ca Rx khi Ib = Imax; Im
= Imax; Im =3/4 Imax .

Gii:

Ti Im =Imax = 50A; Vm = Imax Rm = 50A 1k = 50mA.

Vm 50mV
Do : I m 50A . Nh vy dng in: Ib = 100A.
R2 1k
Eb
Vy Rx R1 # Nu R x R1 R2 // Rm 500 .
Ib
1,5V
# 100A 15k. Rx +15k = 15k; Rx = 0.
Khi Im =1/2 Imax = 25A; Vm = 25mV I2 = 25A.
1,5V
Suy ra Ib = 50A. Vy Rx + R1 # 50 A ; Rx # 15k.
Tng t nh cch tnh trn. Im = 3/4 Imax = 37,5A.

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O LNG IN BI TP

Ib = Im + I2 = 37,5A + 37,5A = 75A.

1,5V
Rx + R1 = 75A = 20k, Rx = 5k.

2.2 Mt ohm-k loi ni tip c mch o (Hinh di y). Ngun Eb = 1,5V, c cu o c Ifs = 100A.
in tr R1 + Rm = 15k.
a)Tnh dng in chy qua c cu o khi Rx = 0.
b)Tnh tr gi Rx cho kim ch thi c lch bng 1/2 FSD, 1/4 FSD, 3/4 FSD (FSD: lch ti a
thang o.)

Hnh B.2.2

Gii:

Eb 1,5V
a. I m 100A (FSD).
R x R1 Rm 0 15k

b. lch bng 1/2 FSD:

100 A
Im = 50A (v c cu o tuyn tnh.)
2
R x b R1 Rm
Eb E 1,5V
R x R1 Rm 15k 15k
Im Im 50A
lch bng 1/4 FSD:
100 A 1,5V
Im 25A ; R x 15k 45k
4 25A

lch bng 3/4 FSD:

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O LNG IN BI TP

1,5V
Im = 0,75 100A = 75A; R x 75A 15k 5k.

2.3 Mt ohm-k c mch o nh hnh sau. Bit Eb =1,5V, R1 = 15k; Rm = 50; R2 = 50; c cu o c
Ifs = 50.
Tnh tr gi Rx khi kim ch th c lch ti a: (FSD); 1/2 FSD v 3/4 FSD.

Hnh B.2.3

Gii:

Khi kim lch ti a (FSD):

Im = 50A; Vm = Im.Rm = 50A50 = 2,5mV.

Vm 2,5Vm
I2 50 A
R2 50

Dng in mch chnh: Ib = I2 + Im = 50A + 50A = 100A.

E 1,5V
R x R1 b 15k
I b 100A

Rx = ( Rx + R1) R1 = 15k - 15k = 0

Kim lch 1/2 FSD:
1,25mV
Im = 25A; Vm = 25A 50 = 1,25mV; I 2 25A
50
Ib = 25A + 25A = 50A.
1,5V
Rx R1 30k ; Rx = 30k - 15k = 15k.
50 A
Kim lch 3/4 FSD:
Im = 0,75 50A = 37,5A; Vm = 37,5A50 = 1,875mV.
1,875mV
I 2 37,5A ; Ib = 37,5A + 37,5A = 75A.
50
1,5V
R x R1 20k R x 20k 15k 5k .
75A

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O LNG IN BI TP

2.4 Mt ohm-k co mch o nhiu hnh bai 3. c ngun Eb giam xung ch cn 1,3V. Tnh tr gi mi ca
R2 ?.?li cc gi tr Rx tng ng vi lch ca kim: 1/2 FSD, 3/4 FSD.

Gii:
Eb 1,3V
Rx = 0; I b 86,67 A
R x R1 0 15k
Im = 50A (FSD); I2 = Ib Im = 86,67A 50A = 36,67A.
Vm 2,5mV
Vm = ImRm = 50A 50 = 2,5mV; R2 68,18
I2 36,67 A
Khi kim lch 1/2 FSD:
Im = 25A; Vm = 25A 50 = 12,5mV

Vm 1,25mV
I2 18,33A
R2 68,1
Ib=Im + I2 = 25A + 18,3A =43,33A
V 1,3V
R2 R1 m 30k R x 30k 15k 15k
Ib 43,33A
Khi kim lch 3/4 FSD:

Im = 0,75 50A = 37,5A; Vm = 37,5A 50 = 1,875mV.

1,875mV
I2 27,5A; Ib =37,5A + 27,5A = 65A.
68,18
Vm 1,3V
R x R1 20k R x 20k 15k 5k
Ib 65A

2.5 Tnh dng in chy qua c cu o v lch ca kim ch th ca ohm-k c mch d nh hnh v
khi ta s dung tm o R1 trong hai trng hp:
a)Rx = 0
b) Rx = 24

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O LNG IN BI TP

Hnh B.2.5

Gii:

Mch tng ng ca ohm- k khi ta s dng tm o R1 trong hai trng hp Rx = 0 v Rx = 24

nh sau:
1,5V
Rx = 0; I b
14 10 // 9,99k 2,875k 3,82k

1,5V
Ib 62,516mA
14 10 // 16,685k
Dng Im chy qua c cu o:
10
I m 62,516mA
10 16,685k

Im = 37,5A = Ifs: Khi kim lch ti a.

Rx = 24:
1,5V
Ib 31,254mA
24 1410 // 16,685k
10
I m 31,254mA 18,72A : kim lch 1/2 FSD.
10 16,685k

2.6 Tnh dng in chy qua c cu o v lch ca kim ch th ca ohm-k c mch nh bi 5, khi s
dng tm o R100 va R10k trong trng hp Rx = 0.

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O LNG IN BI TP

Hnh B.2.6

Gii:

Mch tng ng ca Ohm-k khi ta s dng tm o R100 v R = 0.

1,5V
Ib
1470 1k // 9k 2,875k 3,82k
1,5V
622,38A
236k 1k // 15,695k
1k
I m 62238A 37,5A I fs : kim ch th lch ti a.
1k 6,695k

Mch tng ng ca ohm-k khi ta s dungj tm o R10k v Rx = 0.

15V
Ib
236k 10k // 2,875k 3,82k
15V
62,5A
236k 10k // 6,695k
10 k
I m 62,5A 37,5k I fs : Kim ch th lch ti a.
10k 6,695k

2.7 Ta o in tr bng cch dng phng php V v A c mc r di. Ampe-k ch 0,5A,vn k ch

500V.Ampe k c Ra = 10,10k/V. Tnh gi tr R.

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O LNG IN BI TP

Hnh B.2.7
Gii:
E + EA = 500V; I = 0,5A
E E A 500V
Rx R 1000
I 0,5 A

R = 1000 - Ra = 1000 - 10 =990.

2.8 Cc ampe-k, vn k v in tr R bi 2.7 c mc r ngn. Hy tnh ch ca vn k v ampe-

k (ngun cung cp vn l 500V).

Hnh B.2.8
Gii:
Ni tr ca vn k :
Rv = 1000V 10k/V =10M
Rv // R = 10M // 990 = 989,9
500V Rv // R 5000V 989,9
ch ca vn k : E 495V
R a Rv R 10 989,9
E 495V
ch ca ampe-k: I I v R // R 989,9 0,5 A .
v

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O LNG IN BI TP

CHNG III:
O IN DUNG, IN CM V H CM

3.1.Cho cu o nh hnh v , bit C1 =0.1F v t s R3/R4 c th chnh c thay i trong khong :

100/1 v 1/100 . Hy tnh CX m cu c th o c.

Hnh B.3.1

Gii:

Ta c: Cx = C1R3/R4 . Vi : R3/R4 =100/1

=>CX = 0,1F(100/1) =10F

Vi : R3/R4 =1/100 => 0,1F(1/100) =0,001F

Vy cu c tm o : t 0,001F 10F

3.2. Cho cu in dung nh hnh sau, thnh phn mu C1 =0,1F ;R3 =10k. Bit rng cu cn bng khi ngun
cung cp co f = 100Hz; R1 =125 v R4 = 14,7 . Hy tnh gi tr Rs , CS v h s tn hao D ca t?

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O LNG IN BI TP

Hnh B.3.2

Gii:
Ta c : Cs =C1R3/R4;

0,1F 10k
CS = 14,7 k
= 0.068F ;

R1 R 4 125 14,7 k
RS = = =183.3
R3 10k

D = CSRS = 2 . 100Hz 0,068F 183,8 = 0,008

3.3. Cho cu in dung nh hnh sau, thnh phn mu C1 =0,1F ;R3 =10k. Bit rng cu cn bng khi ngun
cung cp co f = 100Hz; R1 =125 v R4 = 14,7 . Hy tnh gi tr Rs , CS v h s tn hao D ca t?

Hnh B.3.3

Gii:
Ta c : Cs =C1R3/R4;

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O LNG IN BI TP

0,1F 10k
CS = 14,7 k
= 0.068F ;

R1 R 4 125 14,7 k
RS = = =183.3
R3 10k

D = CSRS = 2 . 100Hz 0,068F 183,8 = 0,008

3.4.Cu Maxwell o in cm dng thnh phn mu C3 = 0,1F, ngun cung cp c tn s f=100Hz. Cu cn

bng khi R1 =1,26k; R3= 470 v R4 =500 .Tnh tr gi in cm LS, in tr RS v h s phm cht Q ca
cun dy.

Hnh B.3.4

Gii:

Ta c :LS =C3R1R4 =0,1F 1,26k 500 63mH

R1 R 4 1,26k 500
RS = 1.,34k
R3 470

LS 2 100 Hz 63mH
Q= 0,03
RS 1,34k

3.5. Cu c ngun cung cp f= 100Hz cn bng khi C3 =0,1F, R1 =1,26k , R3 =75 v R4 =500. Tnh in
cm LP ,in tr RP v h s phm cht Q ca cun dy?

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O LNG IN BI TP

Hnh B.3.5

Gii:
L P C 3 R1 R 4 0,1F 1,26k 500 63mH

R1 R 4 1,26k 500
RP 8,4k
R3 75

RP 8,4k
Q= 212
L P 2 100 Hz 63mH

3.6. Hy tnh thnh phn tng ng LS,RS ca cun dy c :LP =63Mh ; RP = 8,4k ( f =100Hz).
Gii:
2
RP X P
RS = 2 2
2 ;th: RP = 8,4k ; R P
7,056 10 7 ; X P LP
X P RP

=>XP =2 100Hz 63mH =39,6

X 2P =1,57 10 3 ; X P2 R P2 =7,056 107
8,4k 1,57 10 3
RS = 0,187 ;
7,056 10 7

7,056 10 7 39,6
XS = 39,6
7,056 10 7

XS 39,6
LS = = = 63mH
2 100 Hz

3.7. Hy tnh thnh phn tng ng CP ,RP ca t in c RS =183,8 v CS =0,068f (f=100Hz).

Gii:

Ta c: RP =( RS2 +XS2 )/RS ; RS2 = (183,8)2 =33,782 10 3

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O LNG IN BI TP

XS =1/2fCS = 1/(2.100Hz.0,68F) =23,405.103

2
X S =5,478.108

RP =( 33,78.103 +5,478 10 8 ) / 183 2,99M

R S2 X S2 33,78 10 3 5,478 10 8
XP = =23,41.103
XS 23,405 10 3

CP = 1/(2.100Hz.23,41k)= 0,068F

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