Registrationno: [\ [3/2] \]y lo SILOM 9 Total Number of Pages: 02 B.TECH PomT44ot 7" Semester Regular / Back Examination 2015-16 X-RAY AND ELECTRON MICROSCOPY Branch: MM,MME Time: 3 Hours Max marks: 70 Q.CODE: 1197 Answer Question No.1 which is compulsory and any five from the rest. The figures in the right hand margin indicate marks. Q1 _ Answer the following questions: (2x 10) a) Whats white radiation? b) Whats Moseley's law? ©) Whatis Laue diffraction? 4) Whatis atomic scattering factor? e) Whatis filter? ) Whatis inelastic scattering? 9) Whats depth of focus? h) Whatis spherical aberration? i) Whatis dark field image? i) Whatis back scattered electrons? Q2 a) Describe the basic principles of X-ray generation with schematic 5) diagram. 5) Differentiate between Compton scattering and Thomson scattering, 6) 3 a) What is Debye Scherer Camera? Briefly explain the principles of 6) diffraction using this camera. ») What is structure factor? Calculate the structure factor of FCC crystal 6) Q4 (10) 'dentify the crystal structure and determine the theoretical density ofan unknown cubic metal which was collected using CuKa radiation (A=1.54A). The following angles of diffraction of XRD pattem are 38.43, 44.67, 65.02, 78.13, 82.33, 98.33, 111.83, and 116.36. GS a) Describe the basic principles of different mode of image formation in (6) ‘scanning Electron Microscope (SEM) with schematic diagram, 5) Differentiate between the x-ray diffraction and electron diffraction, 6)Q6 a) b) Q7 a) a8 What is SAED pattern? Explain briefly how it determines the different crystalline and amorphous materials. Differentiate between the reciprocal lattice and real lattice. Describe briefly the function of different components of TEM with schematic. Differentiate between energy dispersive x-spectroscopy (EDS) and wave length dispersive x-spectroscopy (WDS). Write short notes: Mass absorption coefficient. Electron probe microanalysis. Ordered and disordered transformation Scanning tunneling microscope. 6) 6) 6) 6) (5x2)Registrationno.: [| | EE | al Total number of printed pages - 2 B.Tech PCMT 4401 Seventh Semester Regular Examination — 2014 X-RAY AND ELECTRON MICROSCOPY BRANCH(S) : MM, MME QUESTION CODE : H 252 Full Marks — 70 Time : 3 Hours: Answer Question No. 1 which is compulsory and any five from the rest. The figures in the right-hand margin indicate marks. 1. Answer the following questions : 2x10 (a) Whatare Bragg’s conditions ? (>) Whatis order of reflection ? (c) Whatdoes XRD pattem indicate-? -— = dd) State the significance of Mosley law. {e) Whatdoes contrast in SEM mean? (f) State the difference between real lattice and reciprocal lattice. (g) Whatis mass absorption coefficient ? (h) Whatis working distance of SEM? 4) Whatare the defects of electromagnetic lens ? (i) _ State the function of X-ray filter. (2 Caloulate the relative intensity of aluminium (a = 4.04958 A) XRD pattem forthe following 20 angles of 38.43, 44.67, 65.02, 78.13, 82/33, 98.93, 111.83 and 116.36 which was collected using CuK, radiation (2. = 1.54 A). Given atomic scattering factors of Al. 10 04] 05]06)07|08]09} 10) 1112413 |14 15] 6.77| 5.69|4.71|3.88|3.24]2.74| 2:32]2.05|1.83|1.69|1.57 8] PTO. (Siney” Joo] o- 02 | 03 L to __ [9 [1123]0.16]7.88 vDiscuss the: generation and characteristics of x-ray radiations. 10 a Describe the processes and mechanisms of electron beam generation from the electron gun. 10 5. (a) Show that the first order of diffraction (200) plane is equal to second order diction (100) plane of cubic crystal (a=5A) using Cus radiation (a =1.54A). 5 (b) Write down the steps for the calculation of lattice parameter from given X-ray pattem. 5 (@) Differentiate between the x-ray diffraction and electron diffraction. 5 ® Explain the techniques for’ bright field and dark field image formation in TEM. 5 7. (a) Explainthe X-ray diffraction pattem of perfect crystal, ae alae amorphous crystal. (b) Explain the electron diffraction pattem of single perfect crystal, wore and large grained polycrystalline materials. 48 Write short notes on any two of the following = a (a) Lorentz-Polarization factor 5 Electron ProbeMicroanalysis(EPMA) = SSstst—C— als |4 Total number of printed pages—2 B. Tech 7: PCMT 4401 Seventh Semester Examination — 2013 u X-RAY AND ELECTRON MICROSCOPY BRANCH : MME, MM QUESTION CODE : C-297 Full Marks -70 Time: 3 Hours »: Answer Question No. 1 which is cempulsory and any five from the rest. 1. Answer the following questions : del 1 ue Fe Sel 2) “) 9) sh A ro) (a) (b) (b) The figures in the right-hand margin indicate marks. 2 x1 oO eee filter is used for Mo target in X-ray tube for the X-ray generation. a was the first crystal determined by X-ray diffraction. The geometry of sample is determined by. diffraction technique. The shape of diffraction pattem in Laue method is The intensity of X-ray diffraction is structure factor. X-ray diffraction peak broadening is contributed due to. oy The typical CuAu phase belongs to. crystal system. Image formation in SEM is due to electrons from the specimen. The main advantage of TEM over SEMis. SAD pattem of TEM represents of crystal. Drawa schematic diagram of X-ray generation. Explain the properties of continuous and characteristic X-ray radiation. 5 Write short notes on Moseley’s law and Bragg's law. 5 : PTO.re ~\t , Aes ce eA -3. (a) Whatis Debye Scherer method ? Describe the process of crystal structure «. determination and its limitation. Sion (b) Determine the crystal structure and lattice parameter from the following 20 values of 38.43, 44.67, 65.02, 78.13, 82.33, 98.93, 111.83, and 116.36 E see recorded using Cu Ka radiation. bee Sa sa _© (a) Whatis integrated intensity of X-ray diffraction ? Explain briefly the factors= 4, that affect the diffracted intensity. Sa (b) Whats structure factor? Derive the structure factor of copper. & os S 5 5. (a) What is residual stress? How is it determined by using X-ray diffraction 2 & oo ¥ | (b) What is electromagnetic lens? Explain briefly its principles and its‘, function. Shot J (@) Draw the schematic ling diagram of SEM and level its different ° ” ! components. ees (b) Describe briefly the different interaction of electron beams with the : ‘specimens. a . : % (@) Describe the dark and bright field image formation in TEM using ray, ‘ diagram. 5 (b) What is SAD pattern? Briefly describe the process of crystal structure determination using SAD pattern. 4 Go 8% Answer ANY TWO of the following: 5x2 4a) Thomson scattering and Compton scattering ae (b) Order and disorder transformation o e) Energy and Wavelength dispersive X-ray spectroscopy (d) Chromatic and spherical aberration. « PCMT 4401 2 -¢i fo [5 [ole [2 Registration No. [o [a | 0 | I Total number of printed pages — 3 B.Tech PCMT 4401 | Seventh Semester Examination — 2012 | X-RAY AND ELECTRON MICROSCOPY Full Marks —70 Time : 3 Hours Answer Question No. 1 which is compulsory and any five from the rest. The figures in the right-hand margin indicate marks. 4. Answer the following questions (any ten) : 2x10 és Whatis Mass absorbance coefficient ? (ii) Whatis Glide plane of symmetry ? Git] Whatis reciprocal lattice @ iv) Whatis macro residual stress ? Af What do you mean by k absorption edge ? vi’ Whatare the filters used for Mo and Co target in XRD studies ? (vii) What is Motif ? Uvii) Whats Moseley's law ? > exse Lengiiy © \lixy” What is atomic scattering factor ? 09 Whatis Compton Effect ra ei” Whats super lattice ? (xii) What is high temperature X-ray diffraction ? (xili) Why X-rays may also be called as anti photoelectric effect ? (giv What are the most common target used in X-ray tubes ? or Whatis Bravais Lattice ? ee THY S peas te a cles PTO.we (a) (b) 3. (a) (b) * ) () 5 (a) (b) we (a) (b) Explain the principle of X-ray diffraction. Derive Bragg's law. 5 The diffraction pattern of copper metal was measured with x-ray radiation of wavelength of 1.315A. The first order Bragg diffraction peak was found at an angle 2 theta of 50.5 degrees. Calculate the spacing between the diffracting planes in the copper metal. 5 Explain sample preparation for TEM work. 5 Discuss the application of SEM in Metallurgy with special reference to failure analysis and 5 Whatis Lorentz polarization factor ? Discuss. 3 Explain the difference between camera ‘method and diffraction method for X-ray diffraction for powder material. 5 Whats the basis of SAD ? Discuss its utility and superiority over XRD. +4 What is the basic principle of EDS ? Discuss its strength and limitations with special reference to elemental analysis. 4 Discuss the Fundamental Principles of Scanning Electron Microscopy (SEM). 3 With a schematic drawing mention the position of different components of SEM. Discuss the application of SEM in Metallurgy with special reference to failure analysis. 443 Ce (a) Describe the “backscattered electrons” contrast in SEM. Describe EDS technique in SEM and mention the problems with EDS. 343 (b) Acrystal has a cubic unit cell of 4.2 A. Using a wavelength of 1.54 A at what angle (2.6) would you expect to measure the (111) peak ? 4 8. Answer ant three of the following : 10 (a) Characterisation radiation is independent of applied voltage. Why ? (b) Niis used as filter material for Cu Ka. radiation —justity. PCMT 4401 2 Contd.(c) () (c) (d) (e) Distinguish between Sealed and demountable X-ray tube, Absorption effect is lower for planes with higher indices. Why 7 (e) TOI, IOT, O10, IIT belong to a plane of zones whose zone axis is IOI. — Justify the statement. 9. Write short note on any three of the following : 10 (a) Grain size measurement (b) Reciprocal lattice Lau method in diffraction Quantitative analysis of different phases by X-ray diffraction Ideal and non-ideal diffraction. PCMT 4401 3 -cRegistration No. : Total number of printed pages—2 B.Tech PomTador (3: “' Seventh Semester Examination — 2011 Ss om X-RAY AND ELECTRON MICROSCOPY ee Full Marks ~70 nh 0 ak | 2 Time : 3- Hours Answer Question No. 1 which is compulsory and any five from the rest. fi") (iii) ae fw (vi vii The figures in the right-hand margin indicate marks. iswer the following questions : 2x10 @ Characterization radiation is independent of applied voltage. Why? Distinguish between Sealed and Demountable X-ray tube. — Why is Pb used for protection of personal in X-ray laboratory? — What is Compton Effect ? Explain briefly the limitations of it.-~ What is atomic scattering factor? How does it affect by angle diffraction? -~ ef + dt What is mass absorption coetticient ? ~ | J What are the most common target used in X-ray tubes 704 vill) What do you mean by Bremsstrah lung radiation? — AX) What type of lens does an electron microscope use ?_— 7) What are the two types of electron microscopes ? .~ | ey Discuss the mechanism of production of X-rays, What do you mean by | (b) (b) (a) filter? How the filter materials are chosen for X-ray diffraction? 24142 What is Residual Stress ? Discuss the use of X-ray in Residual Stress Determination. 2+3 What is reciprocal lattice ? Give the relation between the direct lattice and the reciprocal lattice. 244 How the reciprocal lattice is used in different X-rays? 4 Iscuss how to determine the crystal structure for cubic symmetry by X-ray. What is super lattice 2 3.542 LU pro, 6 Olle of MeU (b) For BCC iron compute, x 5 (i) The inter planner spacing, and a 2? (il) The diffraction angle for the \22U} set of planes. The lattice parameter for Fe is 0.2866 nm. Also, assume that monochromatic radiation having a wave length of 0.1790 1m is used, and the order of reflection is 1. ae 45 5. &, Explain the principle of X-ray diffraction. Derive Bragg's law. 242 ,(b) Discuss some physicochemical properties of X-ray. 3 Determine the wavelength of copper radiation for K, line 4y=0.61977A°, Ian= 4.9120 a, |} 3 6. Write short notes on any three 10 (i) Film loading in Debye Scherer Camera. Ail) Characteristics of X-rays (iii) White Radiation (iv) Chemical analysis using X-ray (vy) Use of TEM in in microstructural investigation of metallic materials (vi) Laue method in diffraction. Avil) Specimen interaction volume. 77 (a) Discuss the Fundamental Principles of Scanning Electron Microscopy ars (SEM). a ee 3 (b) With a schematic drawing mention the position of different components if of SEM. Discuss the application of SEM in Metallurgy with special reference to failure analysisn~ 4+3 8. (a) Whatis the basis of SAD ? Discuss its utility and superiority over XRD. 244 Pe) What is the basic principle of EDS ? Discuss its strength and limitations with special reference to elemental analysis. 4 Discuss the Fundamental Principles of Electron probe micro-analyzer (EPMA) aa ee 2 With a schematic diagram discuss the working of a EPMA instrument with reference to electron source, electromagnetic lenses, sample , chamber and detectors, 2 5) Discuss few applications of EPMA. PCMT 4401 2 -c