MITSUBISHI IGBT MODULES

CM400DY-24A
HIGH POWER SWITCHING USE

CM400DY-24A

IC ................................................................... 400A
VCES ......................................................... 1200V
Insulated Type
2-elements in a pack

APPLICATION
AC drive inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

110
930.25
14 14 14 4
E2 G2

6
620.25

(20.5)
80

30
15
G1 E1

C2E1 E2 C1

3-M6 NUTS 25 25 21.5 4-6.5 MOUNTING HOLES 11

SCREWING DEPTH
E2 G2

18 7 18 7 18 TAB #110. t=0.5

8.5

C2E1 E2 C1
+1.0
0.5

21.2

LABEL
G1 E1
29

CIRCUIT DIAGRAM

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM400DY-24A
HIGH POWER SWITCHING USE

ABSOLUTE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified)

Symbol Parameter Conditions Ratings Unit

VCES Collector-emitter voltage G-E Short 1200 V
VGES Gate-emitter voltage C-E Short 20 V
IC DC, TC = 85C*1 400
Collector current A
ICM Pulse (Note 2) 800
IE (Note 1) 400
Emitter current A
IEM (Note 1) Pulse (Note 2) 800
PC (Note 3) Maximum collector dissipation TC = 25C*1 2710 W
Tj Junction temperature 40 ~ +150 C
Tstg Storage temperature 40 ~ +125 C
Viso Isolation voltage Terminals to base plate, f = 60Hz, AC 1 minute 2500 Vrms
Main terminals M6 screw 3.5 ~ 4.5
Torque strength Nm
Mounting M6 screw 3.5 ~ 4.5
Weight Typical value 580 g

ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
ICES Collector cutoff current VCE = VCES, VGE = 0V 1 mA
Gate-emitter threshold
VGE(th) IC = 40mA, VCE = 10V 6 7 8 V
voltage
IGES Gate leakage current VGE = VGES, VCE = 0V 0.5 A
Collector-emitter saturation Tj = 25C 2.1 3.0
VCE(sat) IC = 400A, VGE = 15V V
voltage Tj = 125C 2.4
Cies Input capacitance 70
VCE = 10V
Coes Output capacitance 6 nF
VGE = 0V
Cres Reverse transfer capacitance 1.4
QG Total gate charge VCC = 600V, IC = 400A, VGE = 15V 2000 nC
td(on) Turn-on delay time 550
tr Turn-on rise time VCC = 600V, IC = 400A 180
ns
td(off) Turn-off delay time VGE = 15V 600
tf Turn-off fall time RG = 0.78, Inductive load 350
trr (Note 1) Reverse recovery time IE = 400A 250 ns
Qrr (Note 1) Reverse recovery charge 16 C
VEC(Note 1) Emitter-collector voltage IE = 400A, VGE = 0V 3.8 V
Rth(j-c)Q IGBT part (1/2 module)*1 0.046
Thermal resistance
Rth(j-c)R FWDi part (1/2 module)*1 0.085 K/W
Rth(c-f) Contact thermal resistance Case to heat sink, Thermal compound Applied (1/2 module)*2 0.02
RG External gate resistance 0.78 10
*1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips.
*2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m K)].
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150C.

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM400DY-24A
HIGH POWER SWITCHING USE

PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
800 4

SATURATION VOLTAGE VCE (sat) (V)

VGE = 15 Tj = 25C VGE = 15V
20V
COLLECTOR CURRENT IC (A)

700 13

COLLECTOR EMITTER
600 12 3

500

400 2
11
300

200 1
10
100 Tj = 25C
9 Tj = 125C
0 0
0 2 4 6 8 10 0 100 200 300 400 500 600 700 800

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION FREE-WHEEL DIODE

VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
10 103
SATURATION VOLTAGE VCE (sat) (V)

Tj = 25C 7
5
EMITTER CURRENT IE (A)

8
COLLECTOR-EMITTER

3
2
6
102
IC = 800A 7
4
IC = 400A 5

3
2
2 Tj = 25C
IC = 160A
Tj = 125C
0 101
6 8 10 12 14 16 18 20 0 1 2 3 4 5

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

CAPACITANCEVCE HALF-BRIDGE
CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
102 103
7 td(off)
CAPACITANCE Cies, Coes, Cres (nF)

Cies 7
5 tf
3 5
td(on)
SWITCHING TIME (ns)

2
3
101 2
7
5
Coes
3 102
2 7
tr Conditions:
100 5
Cres VCC = 600V
7
5 3 VGE = 15V
3 RG = 0.78
2
2 Tj = 125C
VGE = 0V Inductive load
101 1 101 1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 102 2 3 5 7 103

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM400DY-24A
HIGH POWER SWITCHING USE

TRANSIENT THERMAL
REVERSE RECOVERY CHARACTERISTICS IMPEDANCE CHARACTERISTICS
OF FREE-WHEEL DIODE (IGBT part & FWDi part)
(TYPICAL)
103 2 3 5 7102 2 3 5 7101 2 3 5 7 100 2 3 5 7 101
REVERSE RECOVERY CURRENT lrr (A)

103 100

THERMAL IMPEDANCE Zth (jc) (ratio)

Single Pulse
REVERSE RECOVERY TIME trr (ns)

7 7
5 TC = 25C

NORMALIZED TRANSIENT
5
3 Under the chip
2
3
2 101 101
Irr 7 7
5 5
102 3 3
7 trr 2 2
Conditions: IGBT part:
5 102 Per unit base = 102
VCC = 600V
7 7
3 VGE = 15V 5 Rth(jc) = 0.046K/W 5
RG = 0.78 FWDi part:
2 3 3
Tj = 25C 2
Per unit base = 2
Inductive load Rth(jc) = 0.085K/W
101 1 10 3 103
10 2 3 5 7 102 2 3 5 7 103 105 2 3 5 7104 2 3 5 7 103

EMITTER CURRENT IE (A) TIME (s)

SWITCHING LOSS vs. SWITCHING LOSS vs.

COLLECTOR CURRENT GATE RESISTANCE
(TYPICAL) (TYPICAL)
102 103
7 7
Conditions:
VCC = 600V
SWITCHING LOSS (mJ/pulse)

SWITCHING LOSS (mJ/pulse)

5 5
VGE = 15V
3 3 IC = 400A
Tj = 125C
2 2
Inductive load
C snubber at bus
101 Esw(off) 10 2
Conditions:
7 7 Esw(on)
Esw(on) VCC = 600V
5 VGE = 15V 5
Esw(off)
3 RG = 0.78 3
Tj = 125C
2 2
Inductive load
C snubber at bus
100 1 101 1
10 2 3 5 7 102 2 3 5 7 103 10 2 3 5 7 100 2 3 5 7 101

COLLECTOR CURRENT IC (A) GATE RESISTANCE RG ()

RECOVERY LOSS vs.

RECOVERY LOSS vs. IE GATE RESISTANCE
(TYPICAL) (TYPICAL)
102 102
7 7
RECOVERY LOSS (mJ/pulse)

RECOVERY LOSS (mJ/pulse)

5 5

3 3
Err Err
2 2

101 101
Conditions: Conditions:
7 7
VCC = 600V VCC = 600V
5 5 VGE = 15V
VGE = 15V
3 RG = 0.78 3 IE = 400A
Tj = 125C Tj = 125C
2 2
Inductive load Inductive load
C snubber at bus C snubber at bus
100 1 100 1
10 2 3 5 7 102 2 3 5 7 103 10 2 3 5 7 100 2 3 5 7 101

EMITTER CURRENT IE (A) GATE RESISTANCE RG ()

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM400DY-24A
HIGH POWER SWITCHING USE

GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 400A
GATE-EMITTER VOLTAGE VGE (V)

VCC = 400V
16
VCC = 600V
12

0
0 500 1000 1500 2000 2500 3000

GATE CHARGE QG (nC)

Feb. 2009