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SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D

 

NPN Silicon
COLLECTOR

1

2
BASE

3
EMITTER

MAXIMUM RATINGS
Rating Symbol Value Unit 1
2
Collector Emitter Voltage VCEO 40 Vdc 3

Collector Base Voltage VCBO 75 Vdc

CASE 2904, STYLE 17
Emitter Base Voltage VEBO 6.0 Vdc TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc
Total Device Dissipation @ TA = 25C PD 625 mW
Derate above 25C 5.0 mW/C
Total Device Dissipation @ TC = 25C PD 1.5 Watts
Derate above 25C 12 mW/C
Operating and Storage Junction TJ, Tstg 55 to +150 C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 C/W
Thermal Resistance, Junction to Case RqJC 83.3 C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage V(BR)CEO 40 Vdc
(IC = 10 mAdc, IB = 0)
Collector Base Breakdown Voltage V(BR)CBO 75 Vdc
(IC = 10 mAdc, IE = 0)
Emitter Base Breakdown Voltage V(BR)EBO 6.0 Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICEX 10 nAdc
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current ICBO Adc
(VCB = 60 Vdc, IE = 0) 0.01
(VCB = 60 Vdc, IE = 0, TA = 150C) 10
Emitter Cutoff Current IEBO 10 nAdc
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current ICEO 10 nAdc
(VCE = 10 V)
Base Cutoff Current IBEX 20 nAdc
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

Motorola SmallSignal Transistors, FETs and Diodes Device Data 1

Motorola, Inc. 1996
P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain hFE
(IC = 0.1 mAdc, VCE = 10 Vdc) 35
(IC = 1.0 mAdc, VCE = 10 Vdc) 50
(IC = 10 mAdc, VCE = 10 Vdc) 75
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55C) 35
(IC = 150 mAdc, VCE = 10 Vdc)(1) 100 300
(IC = 150 mAdc, VCE = 1.0 Vdc)(1) 50
(IC = 500 mAdc, VCE = 10 Vdc)(1) 40
Collector Emitter Saturation Voltage(1) VCE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 0.3
(IC = 500 mAdc, IB = 50 mAdc) 1.0
Base Emitter Saturation Voltage(1) VBE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 0.6 1.2
(IC = 500 mAdc, IB = 50 mAdc) 2.0

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product(2) fT 300 MHz
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance Cobo 8.0 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo 25 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance hie k
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2.0 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 0.25 1.25
Voltage Feedback Ratio hre X 10 4
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 4.0
SmallSignal Current Gain hfe
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 50 300
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 75 375
Output Admittance hoe mmhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 5.0 35
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 25 200
Collector Base Time Constant rbCc 150 ps
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
Noise Figure NF 4.0 dB
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz)

SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VBE(off) = 2.0 Vdc, td 10 ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) tr 25 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts 225 ns
IB1 = IB2 = 15 mAdc) (Figure 2)
Fall Time tf 60 ns

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

2 Motorola SmallSignal Transistors, FETs and Diodes Device Data

 P2N2222A
SWITCHING TIME EQUIVALENT TEST CIRCUITS

+ 30 V + 30 V
1.0 to 100 s, 1.0 to 100 s, 200
200
+16 V DUTY CYCLE 2.0%
+16 V DUTY CYCLE 2.0%

0 0
1 k 14 V 1k CS* < 10 pF
2 V CS* < 10 pF
< 2 ns < 20 ns
1N914

Scope rise time < 4 ns 4 V

*Total shunt capacitance of test jig,
connectors, and oscilloscope.
Figure 1. TurnOn Time Figure 2. TurnOff Time

1000
700
500 TJ = 125C
hFE , DC CURRENT GAIN

300
200
25C
100
70
55C
50
30 VCE = 1.0 V
20 VCE = 10 V

10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

1.0
TJ = 25C
0.8

0.6 IC = 1.0 mA 10 mA 150 mA 500 mA

0.4

0.2

0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

Motorola SmallSignal Transistors, FETs and Diodes Device Data 3

P2N2222A
200 500
IC/IB = 10 VCC = 30 V
300 IC/IB = 10
100 TJ = 25C
200 ts = ts 1/8 tf IB1 = IB2
70 tr @ VCC = 30 V
50 TJ = 25C
td @ VEB(off) = 2.0 V
100
td @ VEB(off) = 0
t, TIME (ns)

30

t, TIME (ns)
70
20 tf
50
30
10
7.0 20
5.0
10
3.0 7.0
2.0 5.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Turn On Time Figure 6. Turn Off Time

10 10
RS = OPTIMUM f = 1.0 kHz
IC = 1.0 mA, RS = 150 RS = SOURCE
8.0 RS = RESISTANCE 8.0
500 A, RS = 200 IC = 50 A
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

100 A, RS = 2.0 k 100 A
6.0 50 A, RS = 4.0 k 6.0 500 A
1.0 mA

4.0 4.0

2.0 2.0

0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects Figure 8. Source Resistance Effects

f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)

30 500
VCE = 20 V
20 TJ = 25C
300
Ceb
CAPACITANCE (pF)

10 200

7.0

5.0
100
Ccb
3.0 70

2.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 9. Capacitances Figure 10. CurrentGain Bandwidth Product

4 Motorola SmallSignal Transistors, FETs and Diodes Device Data

 P2N2222A
1.0 +0.5
TJ = 25C

0.8 0 RqVC for VCE(sat)

COEFFICIENT (mV/ C)
V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10
1.0 V 0.5
0.6
VBE(on) @ VCE = 10 V 1.0
0.4
1.5

0.2
2.0 RqVB for VBE
VCE(sat) @ IC/IB = 10
0 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. On Voltages Figure 12. Temperature Coefficients

Motorola SmallSignal Transistors, FETs and Diodes Device Data 5

P2N2222A
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION XX J 0.015 0.020 0.39 0.50
V C K 0.500 12.70
L 0.250 6.35
N 0.080 0.105 2.04 2.66
1 N P 0.100 2.54
R 0.115 2.93
N V 0.135 3.43

STYLE 17:
CASE 02904 PIN 1. COLLECTOR
2. BASE
(TO226AA) 3. EMITTER
ISSUE AD

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*P2N2222A/D*
6 P2N2222A/D
Motorola SmallSignal Transistors, FETs and Diodes Device Data