| BT139-600E 1. General descrip! 4Q Triac 27 September 2013 Product data she Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220A8) plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. This sensitive gate “series E" triacis intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits 2. Features and benefits Direct triggering from low power drivers and logic ICs High blocking voltage capability Planar passivated for voltage ruggedness and reliability Sensitive gate Triggering in all four quadrants 3. Applications * General purpose motor control + General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter (Conditions Min [Typ [Max [Unit Vor repetitive peak off - |; 600. |v state voltage row ‘or-repetitve peak on-| full sine wave; Ty = 25 °C = 185A state current {p= 20 ms: Fla. 4; Fla. 5 Trews) RMS on-state current | fullsine wave; Trp $99 °C; Fig - eA Fig, 2; Eig, 9 Static characteristics ler gate tigger current [Vp=12V; r= 0.1 A, 12 Ges ~ [25/10 [ma T= 25°C; Fi. 7 Vib = 0.1 A Ta Gs = 410 |mA T= 25°C; ia. 7 ‘Sean or click this GR code to view the lates information fortis praductNXP Semiconductors BT139-600E 4Q Triac Symbol Parameter (Conditions [Min Typ [Max [Unit Vo=12V; r= 0.1.8; 72 Gy, - [510 |mA 7)= 25°C; Fia.7 Vp =12V; ir=0.1 A; 72: Gr; - [tt (25 [ma 1,= 25°C; Fia.7 5. Pinning information Table 2.__ Pinning information Pin [Symbol [Description ‘Simplified outline Ganoneel 1 Ti __| main terminal + eBkn 2 T2___| main terminal 2 6 ‘most 3 6 gate mb T2__| mounting base: main terminal 2 HNN 0.2208 (SOT78) 6. Ordering informa Table 3. Ordering information Type number Package Name Description Version BT139-600E TO-220A8 plastic single-ended package; heatsink mounted; 1 mounting | SOT78 holo; Stead 70-2208, BT139-500E/DG | TO-220AB _ plastic single-ended package; heatsink mounted: t mounting | SOT7® hole; 3ead T0-2200B 27 Soptombor 2013, Product data she: 2113NXP Semiconductors BT139-600E 7. Limiting values 4Q Triac Table 4 Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). ‘Symbol Parameter [Conditions “Tin [Max unit | Yoru repetitive peak off-state voltage |- 600 |v Tews) RMS on-state current {ull sine wave; Tm $ 99 °G; Fig. 1; - 6 fa Fig. 2; Fig. 3 ow Ton-repetve peak on-state | fll sine wave; Tyowy = 25 > 18 [A current y= 20ms;Fia. 4 Fig. 5 {ull sine wave; Tony = 25 % > 70 [a t= 16.7 me mi 12 for fusing p= 10ms; SIN > 20 aay diyidt rate of rise of on-state current | Ir = 20 A; Ig = 0.2 A; dig/dt = 0,2 Alps; - 50 Alps: Ter G+ Ip = 20 A; Ig = 0.2 A; dig/dt = 0.2 Alys; - 50 Als: T2G Ip = 20 A; Ig = 0.2 A; dig/dt = 0.2 Alus; - 50 Als: 2-6 0 A; Ig = 0.2 A digit = 02 Alps; - Aus T2-G+ tow peak gate current \- 2 A Pow peak gate power \- 5 w Pow average gate power ‘over any 20 ms period is 0s |w | Tag aoreye temperatire Tao 150 S 7 junction temperature - 5 0 Product data she: 27 Soptombor 2013, 3113NXP Semiconductors BT139-600E 4Q Triac rs) rts a ry wh ° 15 1 2 20 0 ° barge ouraton . ‘ne '0) $= 50 Hz; Trp = 99°C (1) Trp = 99 °C Fig. 1. RMS on-state current as a function of surge Fig. 2. RMS on-state current as a function of mounting duration; maximum values base temperature; maximum values Pas a Trane) fw 0 re) 0 a ‘01 15 7 107 w 10 — 13 5 19 Pres) A) «a= conduction angle 28 = form factor = Irs! ay Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values. Product data sheet 27 Soptombor 2013, 413NXP Semiconductors BT139-600E 4Q Triac Tes kL A, trou a rH Toten = 25°C max rm 2 <= ° 1 io = 50 Hz; n= number of cycles Fig. 4. Non-repotitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values @ 10? Tsay = 25°C max oF toe t$20ms (1) df iit (2) 72- G+ quadrant limit Fig. 5. _Non-repetitive peak on-state current as a function of pulse width; maximum values Product data sheet 5113 27 Soptombor 2013,NXP Semiconductors BT139-600E 4Q Triac 8. Thermal characteristics Table 5. _ Thermal characteristics ‘Symbol Parameter ‘Conditions | |Min Typ [Max [Unit Ringnby thermal resistance half eycle: Fig. 6 ear) Kw from junction to tulole;Fig6 =~=~CS*=<“‘~*S*SCSS:S mounting base a Reva thermal resistance | in ree air = 60 - (KW from junction to ambiont Zaye cam 102 to 10 10 io io? so + 10 ee (1) Unidirectional (half eycle) (2) Bidirectional (fll cycle) Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width Product data sheet 27 Soptombor 2013, orNXP Semiconductors BT139-600E 4Q Triac 9. Characteristics Table 6. Characteristics Parameter (Conditions Min [Typ [Max ]Unit teristics gate tigger current | Vp =12V; r=0.1 A, T2* Ge; - [25/10 [ma T,= 25°C; Fia.7 vi I= 0.1 A, 12+ Gs ~ (4 (10 [ma T= 25°C; Fi? 2V; r= 0.1 A, T2Gy = (5 (10 [ma 1)= 25°C: Fig. 7 Vo=12V; lp=0.1 A; T2- Gr; - (25 [ma T= 25°C; Fig. 7 I Tatching curent| Vp= 12 Vi le=0.1 A: 12+ GH; ~ (8230 |mA T= 25°C; Fig. 8 Vp=12Vile=0.1 Ai T2* Gi ~ 1640 | mA T= 25°C; Fig. 8 Vo = 12V; g=0.1 A: T2-G, ~ [430 |ma 7)= 25°C; Fia. 8 2V; Ig =0.1 A; T2- G+, - [55 40 [ma 25°C; Fig. 8 li holding current Vp=12V; T= 25°C; Fig 9 - [4 45 [ma Wr ‘on-state voltage p= 204; T)= 25°C; Eig. 10 ~ 12 18 Ver gate trigger voltage | V= 12 Vi n= 0.1 A; T)= 25 ~ lor 4 Fig. 11 Vp = 400 Vs Ir= 0.1 As T= 125°C; 02 04 - V ib ‘offs current > or 0s ma Dynamic characteristics aVolat rate of ise of of-state | Voy = 402 Vi T= 125°C; (Vow = 67% = 150 |- [Vins vottage of Vora: exponential waveform: gate open circuit tw ‘gate-controlied turn-on | In = 20 A; Vo = - 2 as time dt=5 Alu Product data she: 27 Soptombor 2013, 7118NXP Semiconductors BT139-600E 4Q Triac tert) ke Teraees Tare a a NC — ~~ | ‘oe st) oO 80 eo) 460) (1) T2Ge Fig. 8. Normalized latching current as a function of, (2) Te junction temperature G)T2.6 (a) T2+ G+ Fig. 7. Normalized gate trigger current as a function of Junction temperature in w olf affe Tray “0 » [ ' Y 0 o 500) ven Fig. 9. Normalized holding current as a function of 195 V; R, =0.018.0 junction temperature (1) 7) 125 °C: typical values (2)7,= 125°C; maximum values (3)7, = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage ais Product data sheet 27 Soptombor 2013,NXP Semiconductors BT139-600E 4Q Triac Varese) 2 oa ‘se ° wo nec Fig. 11. Normalized gate trigger voltage as a function of junction temperature Product data sheet 27 Soptombor 2013, 9113NXP Semiconductors BT139-600E 4Q Triac 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3ead TO-220A8 sore LG i | vcrel Lf fe) tT th con alg! DIMENSIONS (mmm ar th origin! dimensions) wt] ata ye omar] = f[ofofe fe] e iumfSt], fala mm | as [25] os | to | #0 | oa |i52] $0 | or [25] 28 | 27 | 3° | 35 | a7 | 22 noe designs may vary. OuTUNE REFERENCES EUROPEAN] isgue pare VERSION ee TeeEe “TET PROJECTION sore suecrozea | soe 636 | so Fig, 12, Package outline T0-220AB (SOT78) 10113 27 Soptombor 2013, Product data she:NXP Semiconductors BT139-600E 11. Legal information 11.1. Data sheet status Product Definition status (2) “Objecve | Development This docarant contains data fom [short data the objective spectator product Srest evelopment Pratiinary | Qualiiation This document consis dala fom the [short oat preliminary specication. Produa | Producion This dacunont contains he proc [short data spocteson [1] Pose consut he most cont Issued document before ntiating or competing 2 design. [2] Tho orm’short data shoots expaines in soton "Donon TB] The product tats of devices) deserbed inthis document may have hanged snc ths document wes pubished an may afer n case of rnultpl doves. The ists reduc stats formation Is avalabla on tho Internet a URL hip. n.com, 11.2. Definitions Preview — The dacumentisa preview version oly. he documents sti subject to formal approval wrich may resutin meaeatons or addons NXP Seniconaucors doesnot give any representations or warrants 2 0 the acouracy or completeness of ntarmetimninduded hers ad shel have noabilty fortheconsequenoes a use of uch infomation. Draft — The document i raf version oly. The content tilunder Intamalevtew and subject formal approval, rch may esut Imodifeatore or adstons. NXP Semiconductors doesnot que any ‘eprosoniaions or warrants a ote acsrary or eompllonaes of Intoraton included eran nd sha have no ait forthe consequences ‘fue of uch formation, ‘Short datasheet — A shor dala shea san exact rom aul datasheet with the same product ype number() ana Wo. A chor dala shes s inindod for quckreternce only and shoul ot be relied upon fo contin ‘elaed ara fal nfomaton. For delsies ard llvormation swe felevant os data sheet, which saat on request via the teal NX Semiconductors sales ofa. Incase of any incosisteney o can wh the short data shes, ill ata shoot shall prova. Product specication — Tha infomation and data provided a Product ala shoot sal dfn the specteton ofthe product as agreed botwoon NX® Semiconductors and is estomen seless AXP Semiconsclos ard ‘ustomer have exlly agreed stherwise wring I no evel Mawar, hall sn agreement be van vic the NXP Semconductre product is ceomod to ofa unclons and qualities boyend those deserbod i the Product data shoot, 11.3. Disclaimers Limit warranty and ability — Information in this documents beloved {oe aczurato an reliable. However, NXP Somicondutors does not ve ‘hy repasentton o wats, sxpressed or mpd. a 6 te accuracy ‘rcompletanae of auch intrmaton and shal have no lab for he ansequencos of use of such infomaton. NXP Semiconductors axa no responsbify for hs canfotin Bis document provides by an information ‘oures aust o NXP Semonductors. 4Q Triac Inno vent shall NXP Somsconductors be labl for any indirect, ince, puntve, special > eorsoquebal damages (neki = witout imaton = feat prt, ost savings, business irtaruptan, costs lalad tthe removal ‘or teplacoment of any poaucsor rowan cnarpee) wheter orn such damages are bases on fr (nusing negligence), waranty, reach of anal o any ob legal hey Notwithstanding ary damages tha ustomor might incur fer any reason \whasoover, NAP Seniconductors' aggregate and curative aby toads {ustomar for he products aosenbed herein sas be id In accordance ‘it tne Tame and condone of commerca eae of NXP Semicondors, Right to make changes — NXP Semiconductors reserves he right io ‘maka changos fo lformaton published inthis documers, cuang without Train spectietons ae product descriptors, al anytime and without ole. Ths document supareedes and replaces all wormsatonsuppos pit {othe pubestion hereot ‘Suitability for use— NXP Semiconductors prdut are not designe, [uhorzed or warraniad abe autabl for use nie supp. e-ial Ssloy-ticalsystoms or equipment, nor in apolcatens where fale oF ‘maftincion ofan NXP Semiconductors product can reasonaly be expected {Gesu in personal ny, dea or sever poperty or enorme damage. NXP Samlcorauctrs and ts suppliers ascent no lab or ‘nelson andor cso of NXP Semiconductors preducs in such oauipment or palicatons and therfore such nlasion andor os she customers own ‘Quick reference deta — The Gui eeronca dais an extrac ofthe ‘product dia gven te Lining values and Charactoratc socons of is Gocumet, an as such sna compat, exhaustive or legally binding ‘Applications — Aypcaons tat are desorbed hes or any of tebe ‘reduce are for ustaive purposss ony NX® Semiconductors makes 0 ‘erasenaton or waranty tat such appeaione wo! be sabe forthe Spoctiod use witout hte sing or modieaton ‘Customers are response forthe design and operaton of aie palcions and prosuts using NXP Semiconductors prods, and NXP ‘Somicarducts acrops o ably for any asisanes wih appesens of customer product design tls customer's soe responsi to detrmine \uhoter th NXP Semiconductors products sutable and forthe Customer appleatons and product lannad, a wel as fr te planed ‘Spalcation and use of custom’ thr pat estomar() Customers shoul ‘roviéeapproprate dasign and operating safeguards to minmiza he ks Sstocatd wth the appeations and product [NAP Semiconductors doos not accept any Labi eats to ary dau damage, costs or pool which Is bas on any weakness or deft ‘nthe csiome's aplcatons produ, or he appeaton or uso By customers tha party customers). Customers responsible to cing all ‘necessary tasting forthe customars apolestons and product using NXP “Semiconductors prodicts inorder io avoid a dofalt of th applications and he products oof be appeatin or ute by stones te party ‘ustomers). NXP doesnot ancept any aly ns espe. Limiting values — Stoss above one of mote tning values (a8 dafied in ‘he Absolute Manu Ratings Sytem of EC 80134) wil ease permanant Gamage tothe deve. Limang value are stoss ratings oly and (proper), ‘operation ofthe doves a those o ary othe eovatons above thse {Geen in he Recommend operating contre section faresnt) ofthe Gharactenstes excban of te documents not warated, Constant or ‘repented expos fo big value will pemanerty and overs afet {he qualty array ofthe doves ‘Terms and conditions of commercial eals — NXP Semiconductors products are sold subject othe general ors ang conatons of emer ht, 0 publahed a ip wautan cotnotetares,untess aherwise ‘greed ha valid wlten aviv agreement Incase an iaidual’ {greemont sconces only ta arms and cantons of te respect {agreement shall apply. NXP Semiconductors hereby expressly objects poling the eustmer'sgoneal ers and condor wi regard athe Durchate of NXP Semiconductors prods by custome. ‘No offer to ell or ieente — Nothing in hs Socuant may be inercsod cor constued as an oferocel products Wats open for azoeptance othe 27 September 2013, 14143NXP Semiconductors BT139-600E ‘grant, convoyane ormpistion of any leans under any copyights,paonts Boho util or ntact propery igs Export control — This document as wo asthe Hema) dosecbea horn maybe subjeto export contol regulators. Export might requre a por ‘uthrization om competent autres. Non-automotive qualified products — Unoss this dats shea expresely ‘Salo that tis specfe NXP Semsconducors product autometve gua ‘he product Isnt stable for automotive se, ie naler qualfas nor lesa in acordanes wih automate tsing application requires, NXP Semiconductors accepts noi for incon andor ase nor ‘tome quail product in aitonve equipment or apalctions, Inthe event hat customer ues te product for design and use ulomsve pplations to automate speclicabons and stansarts, ustomer (a) shall use the product wtnot NXP Samlonducters waranty of he product for such autometveapelcatons, use and speceators, and {ey wnenover customer ues the product for auiomatveappleatons Beyond NXP Semicanauctor' speciation sucn Use shall be solely at customer's ‘oun sk, ae) customer ful nsemnifes NXP Somiconducos fr any Tit damages or failed product slams resulting from customer deagn and neo he product or automave applets beyond NXP Somiconauctrs andard waranty and NXP Semiconductors product spacteatona, ‘Translations — A non-Engieh (Kantted) verion of documents ee ‘elorence only. The Englah verso shall preva case of any dscrepancy beeen ne anslated and Engieh versions 11.4 Trademarks Notice: Altfernced brands, product names, service names and Irademarts ae the property of ther especive canes ‘Adelante, Btport, Bitsound, CoolFux, CoReUise, DESFire, EZ:HV. FabKey, Greenchip, HiPerSmart, HITAG, MC-bus loge, CODE. LCODE, ITEC, Labelution MIFARE, MIFARE Plus MIFARE Uitralight, WoReUse, LPAK. Silicon Tuner SlicooMAX, SmartXA STARIug, TOPFET, ‘renchMOS, ied and UCODE — ae tademana of NXP 3. HO Radio and HO Rado Ingo — are trademarks of Biquty Dial Corporation, 4Q Triac 27 September 2013, 1243NXP Semiconductors BT139-600E 4Q Triac 12. Contents 1 Genoral description . 2 Features and benefits. 3 Applications wennmsnninieninninninnannnin’ 4 Quick reference data 1 5 Pinning Information snnsesnnnnsnsininsnnonen® 6 Ordering information 7 Limiting values .. 8 Thermal characteristics 9 Characteristics. 10 Package outline 14 Legal information .. 11.1 Data sheet status 11.2 Definitions 11.3 Disclaimers .. 114 Trademarks ‘SARE LV 2. A gh ezonve or mars ean pear a piewe com Fei ae pie toro eter cen Product data shi 27 September 2013, 13113This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.