Scribd Logo
Upload

Welcome to Scribd!

  • 2sa1244 Driver Turbo Toyota

    Uploaded by

    david silveira
    28 views4 pages
    drv turvo toyota

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Report this Document
    drv turvo toyota

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    28 views4 pages

    2sa1244 Driver Turbo Toyota

    Uploaded by

    david silveira
    drv turvo toyota

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    of 4
    TOSHIBA 2SA1244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1244 HIGH CURRENT SWITCHING APPLICATIONS Unit in mm “ oman, 3 © Low Collector Saturation Voltage ore es Vowisat) = -0.4V (Max) at Ig = -3A © High Speed Switching Time : totg = 1.0 us (Typ.) © Complementary to 2803074 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC sympou | RATING | unrT |] Collector Base Voltage Vono =60 Vv pot Collector-Emitter Voltage VcEO =50 Vv A Emitter-Base Voltage VEBO <5 Vv & | fda Collector Current To =5 A Manu. a" Base Current 1B =I A_|| seer Collector Power Ta = 25°C 10 Dissipation Te=25°0| PC 20, w [Junction Temperature T 150 °C. rage Temperature Rani =B5~ 5 2 €oltecroR Storage Temperature Range Tag s5~150 | °C a Neuse, [JEDEC — BIAS = [TOSHIBA (4)2-7B1A_(B)2-7H24 Weight : 0.36 g 261001648 @ TOSHIBA is continually working to Improve the quality and the reliability of fs products. Nevertheless, semiconductor devices in general can malfunction or Tail due to thelr inherent electrical sensitivity and vulnerability to physical stress, it's the responsibilty of the buyer, when utlzing TOSMIBA products, to observe standards of safety, and to avoid Situations In which @ malfunction or failure of @ TOSHIBA. product could. cause loss of human life, bodily injury oF damage tO property. In developing your designs, please ensure thet TOSHIBA products are’ used within spectfieg foperating ranges. os set forth in the most recent’ products specifications. Also, please keep in mind ‘the precautions hd conditions set forth in the TOSHiaA Semiconductor Relablity Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA. CORPORATION for ary infringements of intelectual property or ‘other rights of the third Darties Which may result from its use. No license Is granted by Implication of otherwise under any intelectual roperty or other fights of TOSHIBA CORPORATION or others @ The information contained herein is subject to change without notice 7999-06-16 1/4 TOSHIBA 2SA1244 ELECTRICAL CHARACTERISTICS (Ta = 25°0) CHARACTERISTIC | SYMBOL ‘TEST CONDITION man. | Typ. [Max.]unrr] Collector Cutolt Current Toso [Von = —50V,Ip=0 == T= ae Emitter Cutoff Current Tepo [Ves = —5V, Io = == tak Collector-Emitter - Breakdown Voltage VBR) CEO] Io = ~10 mA, Te ~e| [=] FE = = _ DC Current Gain (Note) _|VoE = -1V. To = * 240 hrg (2) _|VCE = -1V, Ic 30] — | — Saturation [Collector Emitter | Von (sat) [Ic = —3A, Tp = [=03 oa, Voltage [Base-Emitter | Vpn (eat) [lo = —3A, Ip = = [=09=12 Pivansition Frequency ff Vor = -4V, Io ee Collector Output Capacitance | Coy | YOR 10 Ys IB = 0 — | 10] — | pr Turnon Time | ton some Puri pom! — | oa] — us < Switehin ; Jno Ta g witching | Storage Time | tstg | apy a =} _ | 10] — | us =Ip1 = Ina Sov Fall Time te DUTY CYCLE, ie ee Note : hr (1) Classification 0: T0~140 ¥ : 120~240 7999-06-16 2/4 TOSHIBA 2SA1244 Ie - Vor Yor - to . 1) | commos exrrren . | Siete 3 rent a, tas toon | te 8 g i 8 be : 2 Eg “ zg 3 ~~ 3 L et | Z I= “10m i Zs ° COLLECTOR CURRENT Ie. (A) Venisat) - IC bre - Ic a se P couMON er ; common rte 2 Jeg =20 wo iw Bs 2 a aa 3 EF ->9 2 2 Sof ca g 2 2 aos 2-07-03 10 “hos or 03 Tt COLLECTOR CURRENT Ie A) COLLECTOR CURRENT Ic.

    You might also like