DATA SHEET SILICON TRANSISTOR 2SC4177 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DIMENSIONS 21401 125201 20402 ose loa wor FEATURES © Complementary to 2SA1611 (© High DC Current Gain: hee = 200 TYP, . (Veg = 6.0 V, Ie = 1.0 mA) (© High Voltage: Vceo = 50 V ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Current (T3 = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Power Dissipation ‘at 25 °C Ambient Temperature Maximum Temperatures Junction Temperature ‘Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25°C) Veen «60 Veco 80 Veco 50 Vv le 100 mA. Py 150 mW v 190 °C Tug —88t0 +150. °C (CHARACTERISTIC symeou | MIN. | TP | MAX | UNIT TEST CONDITIONS ‘Gallector Cutotf Curent 180 oa A | Vep=60V.1e=0 Emitter Gur Gurrent 1E60 on vA | Vep=50V,ic=0 DC Current Gain hee. m0 | 200 | 600 Vee =60¥V, 1¢= 10 mA™ Collector Saturation Voltage Veet) 1s | 03 V__[ te= 100mA,1g= 10m Bere 0 Saturation Voltage Vee tat) oss | 10 V__| te= 100A, Ig= 10mA Beso Emitter Voltage Vee | 05s | 062 | 065 V__| Voe=80V, 1¢= 10 ma (Gain Bandwidth Product tt 250 wiz | Voe=80V, le=—10™mA ‘Output Capacitance Cob 30 PF | Vea=60V, Ip=0,1= 10H * Pulsed: PW 350 us, Duty Cycle 52% hee Clas Marking “ 1s uw bre ‘90x10 | 13510270 | 200%0400 | 30010 600, © NEC Corporation 198728C4177 ' NEC escr aves TYPICAL CHARACTERISTICS (Ta = 25°C) TOTAL POWER DISSIPATION w=. = MoRWALIze0 couLecron curore Rehtn frenaOne % SORMANPED SRaiET SeSeri ne 200 § 10000 180 fr 3 mE is 10 3 se Bomb 3 200 3 0 i H é £ a 5 20 3 2 9 3 c 2 : fa ae EEA { ae t Me Noo ao aaa Ton T2010 Teo “8 two 8 fa~Ambient Temperature —"C a Ty-Ambont Temperature "6 COLLECTOR CURRENT vs COLLECTOR CURRENT v4 4 af a i i = 3 2 Ea _ = 8 & 15) 2 & = wa | a i cea rte Ylage-¥ Vee" Scare Ente lee-¥ os, cunman on be, cunnenr aan ve ra 0 4 ml dol 5 J a 24 gs 2 Ss 3 z tec Cent te-CactCaremCOLLECTOR CURRENT vw. SASE To eiTren VOLTAGE es 5 sol uted 2 ¢ 10} 2 3 os 2 a3] oot 285 OF O58 BF OE OFF pease to Emitter Votge—V EMITTER CURRENT . 10000 : z 1000 E500) ee=10 vp-6 ¥ 2 ev 3 ive = 50 é vd Spr=ua-as-1=2 —$ 10-20 ~30-ito le-EimitarCurant- ok SMALL SIGWAL CURRENT CAIN vt BeASGEAENG Si 100 é | | I 3 ttt & T = | I it 2 1 oa G05 8ST T0 hhee~DC Current Gain 2SC4177 COLLECTOR AND BASE SATURATION SOCTAGE we COLLECTOR CURRENT o2| aa voused, Base Saturation Voltage—V oo 02|—} feist & 3 a i vs grea as 1 2. 5 10-20 g-Collector Curent—mA OUTPUT AND INPUT CAPACITANCE wm REVERSE VOLTAGE 100 20 Gp nout capaci Ce Butput Gana os o2| al ore? 0s 12s 50-100 oa ~Collector to Gase Voltage —V ‘VEB—Emittr to Base Voltage V 1026 INPUT IMPEDANCE, VOLTAGE FECOBACK RATIO ANG GUTPUT ADMITTANCE ve SMALL SIGNAL sony oy 8 CO ees Fao} Fao} ¢ oo ALL zolem|a 2 3 (? cs | 404 $2013 20 ett § solbuol t / aldo olZo 0305400800 Boo hjeSmall Signal Current Gain_28C4177 NEC exzcrnon cence NORMALIZED hPARAMETER ve NORMALIZED nrAnAMeTER ve @ , : } a i i ia i I ? £ ‘or ez ue 2 S10 7 6 20 30 apes Vee-Coce 0 Ent atape-¥ re-2108 Secu eam Printed in Jas