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144

  Problems  

II Sample Problems
Chapter 1 Problems
Problem 1-1.

Problem 1-2.

Problem 1-3.

Problem 1-4.
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Chapter 2 Problems
Problem 2-1. Why do you think that although III-V and II-VI materials are often suitable as
semiconductors I-VII materials are not?

Problem 2-2. The measured values for the lattice constants of group IV materials are:

C = 0.357nm, Si = 0.543nm, Ge = ? nm, Sn = 0.649nm

a) Using the bandgap data given for these materials in Figure 2.12, estimate the lattice constant for Ge.
b) Is the relationship between spacing and bandgap what you expected? Expain.
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Chapter 3 Problems
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Chapter 4 Problems

(atoms/cm2),
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Chapter 5 Problems
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Chapter 6 Problems
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Chapter 7 Problems
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Chapter 8 Problems
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Chapter 9 Problems
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Chapter 10 Problems
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Chapter 11 Problems
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Chapter 12 Problems
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Chapter 13 Problems
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Chapter 14 Problems
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Chapter 15 Problems
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Chapter 16 Problems
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Chapter 17 Problems
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Chapter 18 Problems
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Chapter 19 Problems
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Chapter 20 Problems
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Chapter 21 Problems
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Chapter 22 Problems
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Chapter 23 Problems
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Chapter 24 Problems
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Chapter 25 Problems
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Chapter 26 Problems
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Chapter 27 Problems
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Chapter 28 Problems
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III Solutions to Sample Problems


Chapter 1 Solutions
Solution 1-1.

Solution 1-2.
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Solution 1-4.
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Chapter 2 Solutions
Solution 2-1. This solution requies a discussion of the type of bonding that occurs between group I and
group VII versus the other types.

Solution 2-2.

a) The lattice constant for Ge = 0.565nm (requires functional fitting and interpolation).

b) The fitted value should be close to the actual value and lie between the lattice constants for Si and
Sn.
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Chapter 3 Solutions
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Chapter 4 Solutions
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Chapter 5 Solutions
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Chapter 6 Solutions
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Chapter 7 Solutions
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Chapter 8 Solutions
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Chapter 9 Solutions
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Chapter 10 Solutions
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Chapter 11 Solutions

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Chapter 12 Solutions
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Chapter 13 Solutions
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Chapter 14 Solutions
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Chapter 15 Solutions
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Chapter 16 Solutions
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Chapter 17 Solutions
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Chapter 18 Solutions
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Chapter 19 Solutions
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Chapter 20 Solutions
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Chapter 21 Solutions
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Chapter 22 Solutions
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Chapter 23 Solutions
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Chapter 24 Solutions
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Chapter 25 Solutions
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Chapter 26 Solutions
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Chapter 27 Solutions
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Chapter 28 Solutions
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IV Physical Constants and Material Properties

Quantity Symbol Value

Angstrom Unit Å 10-8 cm = 10-10 m


Boltzmann’s Constant k 8.62x10-5 eV/K
1.381x10-23 J/K
Electronic Charge q 1.602x10-19 C
Electron Volt eV 1.602x10-19 J
Electron Rest Mass mo 9.11x10-31 kg
Free Space Permittivity εo 8.854x10-14 F/cm
Plank’s Constant h 6.626x10-34 J-s
4.14x10-15 eV-s
Thermal Voltage at 300K 1 kT/q 0.0259 V

Properties of Silicon at 300K

Quantity Symbol Value

Intrinsic Carrier Concentration ni 1.45x1010 cm-3


Effective Densities of States Nv 1.08x1019 cm-3
Nc 2.8x1019 cm-3
Electron Affinity χSi 4.05 eV
Energy Gap Eg 1.08 eV
Bulk Electron Mobility µn 1350 cm2/V-s
Bulk Hole Mobility µp 470 cm2/V-s
Surface Electron Mobility 520 cm2/V-s
Permittivity εSi 11.7εo

Properties of Silicon Dioxide

Quantity Symbol Value

Permittivity εox 3.9εo


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V Laboratory Instructions

Lab Tutorial - HP4145 Parameter Analyzer

Experiment 1 - PN Junction Diode Parameter Extraction

Experiment 2 - Current Flow in the BJT

Experiment 3 - MOSFET Drain Current Modelling

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