The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group. Transistor and Diode Data Book for Design Engineers TEXAS INSTRUMENTS INCORPORATEDTYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE INTERCHANGEABILITY DIODE DATA SHEETS. SENSISTORS®nasa 17 weer Ox, See 11, AASIAUEET: wma, 4 Tone Pond Ra, Wal OCs Sete 1g 240 cage Meee SE lh ASSSURSEET nod. me Popreead ia) an ACS RA Ah 9 ener yh ne. poe me orcs a es BP ae rat mero te 03 view ne, a es Sais 202. 7615 Mee gneone tenveran, 10700 SW. Beaverton Hr. Suis ‘Ridge. Ave. Sute ee eae Seta AE oly ‘565, Beaverton. OR 97005, ($85) 643-8799, its ‘cee a sa MO 2g Se SRE Roe acer runes 268 aman 28pm Ea a = ae ec ena, ny nha c¢ MAB, WoC, ton iy Tear on iz ean 2,08 rh Ste 2s, MP MER, em, WE Ste See etre nae terete # ra Sree trary Sie Soe seston ao a bt tet oe Sg, Mozneu, An Seance has, omen Sane ater Ci ai ee onic, tors ns, enna eee enter Sg dre Pea ae Se sneer, tas ermane spein . en, tao ND: Maren 82730 Beer auts Panumaricans Oem freuate. ane. Ovnmar 02-9170 ae eee ere eee se Fg 0 ant. aa Pd si seam wae aan it ahi Py ee Ce Bis Kine ate me sera ROE tam ut, Sem Jess apne 6: amas 88,12 f Stsiattgogaimens Se ae —— Sheree ae anager a wernstrepasntane EPR Ta SE AESMCSE wem mnin, racet i rs ng hese te amano se Texas INSTRUMENTS Pomin USA INCORPORATEDThe Transistor and Diode Data Book for Design Engineers First Edition TEXAS © INCORPORATEDIMPORTANT NOTICES. ‘Texas Instruments ceserves the right to make changes at any time Im order to improve design snd to supply the best product TH cannot assume any responsibilty for any elteuits shown oF ceprecent that they ar foe from patent infengoment. Copyriht © 1973 “Texas Instruments Incorporated “Third Printing‘THE TRANSISTOR AND DIODE DATA BOOK ‘Since 1964, when Texas Instruments introduced the first silicon transistor to the marketplace, and later with the invention of ‘the integrated circuit, TI has boon pre-eminent in the semiconductor industry. New semiconductor products are introduced almost daily; new applications for semiconductor products are being found or comtemplated at an ever-increasing rate, especially in the consumer and automotive fields. It is a difficult task for the ‘equipment detign engineer to stay abreast of all of the discrete and integrated-circuit products available to him in his efforts 10 choose the best device at the optimum cost effectiveness. It is the aim of Texas Instruments to provide the design engineer with the maximum amount of accurate product data organized in such a manner that the pertinent data may be located in ‘the least amount of time. ‘Due to the amount of data involved, it would be inconvenient to present TI's complete fine of standard discrete products in a single volume. TI's broad line of power products are described in The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404); optoelectronic products are presented in The Optoelectronics Data Book for Design Engineers, First Edition (CC-405). For ease of reference, all current devices listed in those two volumes are contained in the Type Number Index (Section 0) herein. This 1248-page volume is designed to complement those two volumes and essentially eomplete the current description of TI's line of discrete semiconductors by adding all low-power silicon transistors and diodes. (Generally, “low-power denotes fre.air power dissipation of one watt or les.) This volume contains over 800 silicon transistor types (grown-junction, multijunction, unijunction, and fiekd-ffect transistors) and over 500 silicon diode types (switching, rectifying, voltage-regulating, voltage-variable-capacitance, and ‘general purpose diodes as well as multieloment diode arrays and matrices), over 150 of which are being announced for the first time. Although this volume offers specification and interchangesbility data only for low-power silicon transistors and diodes, ‘complete technical information for all TI semiconductor products is available from your nearest TI field-sles office, local authorized TI distributor, or by writing direct to: Marketing and Information Services, Texas Instruments Incorporated, P.O. Box 5012, Dallas, Texas 75222. We hope that you will find The Transistor and Diode Data Book for Design Engineers a useful addition to your technical Wibrary.Type Number IndexTYPENO. ——-SEC.PAGE wast 104 ase, 102 NASA, 102 1nas7 102 14574, 102 ase. 102 asa, 102 1489 102 INABA, 102 asi 102 rasta 102 wasz 102 14524 102 aes 102 asa 102 aca 102 Nasa 102 nae 102 Nae 102 1ae28 102 as, 102 NASA 102 1Nas38 102 1Nao4 102 INABA 102 aNaoKB, 102 Naas. 102 1NABBA 102 1aese 102 Nes 108 1Ne26. 106 Nez? 108 16628, 108 ieee eee 108 roe, 107 wees, 108 NASA, 108 rN, 108 wos 108 rN, 108 1Ne40. 108 1850, 108 1Ne50. 108 1681 108 wes2 10.10 ess, 10.10 702 see 1011 17020 roa w703 rom 17034, 101 TYPE NO. 1704 7044, 1N705 17054, 1708 17084, 1707 1707, 16708, 17008, 1700 7004, AN710 17108, wm ITA, wiz 1N712, ree aN7I3A wre ANT wns, A715 N76 ANTI6A 1N717 aNTv7A aN718 AN7108 w719 7198 1720 17208, aw77 7218 wr ww7zA, 1723 A738 1728 17244, 1725, IN725A 1726, 1726 N76, 17488, 1w7a7 w747, Texas INSTRUMENTS SEC.PAGE 10.11 tor +. toa ron tor ton 101 tot 1019 1013 1013 10.13 10.13 10.413 1013 10.13 10.13 2. 1093, 2+ 1043, 1013 10.13 10.13 10.13 10.413 1013 1013 1013 10.13 1013 1013 1013 1013 1013 10413 10.13 1013 1013 1013, 1013 1013 1013 1013 1013 1013 1013, 10.13 10.16 1015 10415 1015 INCORPORATED. TYPE NUMBER INDEX ‘TYPE NO. 1N748 1N74BA ang 1N7ABA N70 1N7608, 1N781 A761 i782 1N752A 1N783 N75 sn7s4 1N7848, 1N755, AN786A AN786 1N756A 1787 17574, 1N788, 1753, 1789 7894, 1761 1762 w7ea 1764 785, 1766 wie7 1768 760 Nove worn, words, awo1s, so16 1NO16A N91 1No17 wos7 1NOB7A 1wo578 Noss 1NOSBA noses Noo 1N96OA. os08 SEC.PAGE 1046 10.16 1015 1015, 1015, 10418 10158 1018, 1018 1048, 1045 10.15 1015 1018 1015, 10-16 1015 1045 1015 10.15 10.18 10415 1018 10.16 1017 1017 10.17 1017 10.17 10.17 107 1017 1017 1019 10.19 1019 1019 1019 1019 10.19 1019 10.72 107 1022 102 1022 1022 102 1022 1022 1TYPE NUMBER INDEX TYPENO. ——SEC.PAGE TVPENO. —SEC-PAGE TYPENO. ——SEC.PAGE 1960 1022 13070 + 1028 Tecenonae 10.46 tNge0A . 1022 tnssog =. 2... 10.30 ywasse |... 10.88 tugeos 2... 10:22 awaso?... . . 1030 rwas08 10.48 eel eee 1072 wages 2... 1030 sas07 1048, ANDBIA 02 13500. 1030 wwao0e 1048, 1Nge18 1072 wwasio |... 1090 wwarz7 10-80 twoez 2... 1022 wast... . . 1030 ine 2... 1082 aNe2A 22... 1072 wasi2 2... 1030 waren... 1082 19628 1022 13513 1030 wane... 1082 toes 2... 1022 wwasa.. . . 1030 INa7A |... 1082 N063A 102 1N3615 1030 wwa7o.. . . . 10862 1Noe38 + 1022 13516 ++ 1030 1Na7a0q |... 10.82 tneee 2... 1022 1na517 2... 1030 wast. 2... 1082 tngeaa |... 1022 waste. 5... 1030 INABA... 1082 tngeas 2... 10:22 wasia 2... 1090 wnaraz 2... 1082 woes. soz was20 =. . 1090 INA7QA 1082 1NOBBA |... 1022 was21. |... 1030 a Noes 1022 1N2622 1030 NA733A 10.82 ines 52... 1022 wasza .... . 1090 inaraa 1082 19684, 1022 wss2e =... 1030 INSTA... 1082 tngess 2... 1022 13525... 1090 1Na7a5 1082 1Noe7 2... 10:22 13526. 2... 1030 INATISA .. 1052 1N967A, 102 13627 1030 ana7os 1082 1wo67B 2... 1022 1N3s28 =... 1090 iNa7a6A. 1062 twos 2... 1022 iwas29 6... 1030 nara? 2 1082 ANoBA. .. . . 1022 3590 =. 1030 tna7a7A 10.62 wwoess |... 1022 ‘wwaoot 1032 wNa7s8.. . . 1082 twos 6... . 1022 anaooz =. . - 10.32 ina73aa 1082 1NooA... . . 1072 wana. 2. . 1032 ina7zo... . . 1082 qwoes oo. . 1022 ‘Na008 +. 1032 ANGT29R + 1052 970 1022 anaoos =... 10.32 inamao... 1082 INo70A |... 1022 waoos 2... 1032 1na7aon, 1082 iNo708 |... 1022 164007 + tos2 anamat o.. . 1082 wort 1022 anaes 10:4 iNazsia 1082 INOTIA . 2... 1022 a 1038 nave +. 1082 1No718 2s 1022 1Nats0 1038 aNava2a. |. 1082 anor. t07 wast oo... 1038 rwaTas 1082 INBZA |... 1022 anatsz 2... 1038 1wa743a, + 1082 19728 < + 1072 1Nats3, 1038 ina7aa 2 1082 1No73 ss. 1022 wate 1098 1wa7aaa, 1052 INOTBA 1022 164305, 1040 inaas.. . . 1082 19738, 1022 tnaaaa 2... 10640 ANATAGA 10-52 ina 5... 1028 wae 2... 1042 imams 2... 1082 IN20608 2... 1028 waaay 2... 1042 inavasa 1082 12070 1024 iwasas 2... 1042 tava? 10.82 IN2070A .. 1028 wna... 1042 INaza7A 1082 12071 1024 Naas 1044 wwavaao.. 1082 iN2o7”A ss. 10-08 wNasay 1048 inavaaa 10.82 12175. ‘orro. awesz2 1048 wavag.... . 1082 tnaces 2... 1028 Nasa 1046 inavaga 10.52 | OF O--Rater to The Optosisetronict Date Book for Deion Engineer, First Edition (CC-408). TEXAS, INSTRUMENTSTYPENO. ——-SEC.PAGE. 1Na760 1082 Na7eOA 1082 we7sy 2... 1082 NATTA 1082 wera s082 1NA7E28 r08 1Neoa8 1086 15228 1086 1152288 1086 1Ns2768 1086 1wez7.... 1086 1NS227A 1086 152278 1088 1nsz28 1088 NS22BA 1086 1N5z288 1088 wsz 2... 1086 1N5Z20A 1088 152298 1086 1Ne20 1086. 11N5Z30A 1058 152308 1086 wwezat 1086 ANE2aNA 1088 wean 1088 snsza2 1088 NSZ328 1086 1wsza28 1086 1Ns33 1086 N5230A 1088 152308 1086 wwezs ..... 1086. INGZMA .... 1088 N63, 1088 1NBZ5.. . . 1088, 1NSZ35A 1088 1N52368 1086 15236 1086 1152968 1086 152368 1086 1Ne237 1088 NB2a7A 1088 1N2a78 1088 1533 1086. NSZaaA 1086 e288, 1088 ansz30 10856 152208 1086 1N52008 1088 1N5240 1086 TYPENO. ——-SEC.PAGE 5240, 10-66 ‘We2408 1056 Ns241 10.86 Neat 1086 e218 1056 tws242 10.56 ‘52420 1056 152478 1086 rns243 1086 N23 1056 152438 1086 s2ea 10.86 1ws244a 10.56 tNszean 1086 wea 10.56 15245, 1056 weiss... 10-86 wee 22. 10866 152464, 1086 1Ns2468 1086 152407 1086 152474, 1086 182478 10.56 rez 10868 e240, 1056 nszaaa 1056 ts249 1086 152494, 1086 182408 10856 15250 1056 1N5750A, r086 182608 10868 wszst 1056 inszsta 1086 52518 1086 15252 10856 152528, 1086 1652528 1086 165253 1086 15253, 1086 1N52598 1086 IWS254 1086 1Ns754A, 1086 1652548 1086 1N8255, 1056 ‘INS2S5A 1086 1N52558 1086 ‘Ns256 1086 1N5256A, 10.56 sns2s68 1086 “Not snown in thie data book but sl avaliable from Taxes ineuments. (QPTOW Rafer to The Optowectronics Deee Soak for Design Enginear, Fst Edition (CC-405). POWER Refer to The Power Semiconductor Data Book for Oetign Cpnears Fl m (66-404), TEXAS, INSTRUMENTS TYPE NUMBER INDEX TYPE No. sws2s7 NS287A 11052578 ans722 e723 ws726 15725 15768 15760 ws770 ws771 ws772 1Ns772 ws774 aNs778 2nn17 2Nt18 2Ntiea 2Nt19 2N120 2N243 2N2ae 2N263 2N264 2Naa2 2Na33 SEc.PAGE 1086 1086 1056 orto opto. orto orto. ogTYPE NUMBER INDEX weno. stc.race se0-PAge TWENO, —SEC.#AGE asa... 420 Lee POWER anit owen Go anon 420 Power aia ||| POWER 2anaoae > 420 LID) rower autrza rower 2N4o0 420 rower anima romeR anaoan 222)! 22 power ania... | POWER aason | L111 power 2N17204 * poweR N40? anioson ||| power auras... | POWER Nave auinat at ania... an 2Nsas : aNiiaz act 2Ni00 on aun ania a anes 1...) aa ans : auiiso .. 469 antes |||. rowen zee |... POWER aniist a3 auiea7 ||.) POWER anes? rowen anise 0a 2aNie73 ne 2008 an ais |. | 46a 2ani074 “0 moor || ans aes aNt975 a anos 225 Lil aes ana060 |... as anon 1...) 42s LT aes 2vat02 493 any 1... aa billie anaiore || 489 rr) ee znzis0 |. POWER 2N718A an : Nats rower ang... aa ao: 2N2160 496 aN7198 ant ase anata 2... 488 a1. an a8 anaiean ||| | 40 2N7208 aa oat) aNaioa 488 amas Do ase ot 2N21004 rs ana 404 a: nase age avo...) | 436 bills 2N21044 ase aes erase lille 2Na217 a 2Ne49 428 - wiz. 489 anaso 1... 438 : 2Nz218A 23 2Nost 0 vile aaai9. | 409 avesa | “40 ; : 2N22108 433 2Ne70 uaa : wuz. 499 gens 1...) aaa POWER anz201 423 2no10 aa 2 rowen 2Nza218 499 anos 1... aa L211 rower azz... |. 489 2no12 au 2 owen 2azz2A 453 2N0v7 os 212 rowen aaa... 4108 anor aaa Lill an 2N22004 ‘4105 2N029 32 Lilian aNz03 107 2800 452 2Nier1A an 2aNzat0A 2 aso? Ie. ae anier8 an 2nzz70 2N007 96 aun. 478 2N2200 : miooe | 487 ain rowen wie 1. ats zoo 1. || aso anins |. | PoweR 2N2396 ane 2anio7 roweR anne |. POWER aNz87 on auiot™a || soWeR ann? 2... POWER aumea | any auou7e PoweR anne |. roweR aves | ano aioe 1 rowen ania |. | POWER 212200 one 210404 POWER auizo ||| rowen au |) asa POWER Meter to The Power Semiconductor Date Bock tor Design Engineers, First Edition (CC-404), a4 TEXAS, INSTRUMENTSTYPE NO. 2Nza04 2N7095 2N2306 22402 2u24320 2N2889 2N2483 N24e4 2u2007 2N2408 2N2499 2N2800 2N2537 2N2528 2N2809 2v2540 202506 2n2608 ‘22608 22608 202609 20260 202640 2n2641 2n2642 2N2643 2uz6e4 2N2646 2v2647 2w2a02 202803 2v2008 22008 202006 ‘2N2807 202880 ‘anze04 ‘N20 2029040 2N2005 220050 -2N2006 2N2006A 2N2907 2N29070 2N2913 2nzo14 ‘2N2018 2N20160 POWER.Rater to The Powar Semiconductor Data Book for Design Engineers, First Editon (CC-408), SEC-PAGE 4121 ain a2 4125, 4128 an 4129 4120 4131 4131 4131 4131 4192 ata 4192 192 4196 4198 4138, 12 ava aa a3 ava TYPENO, SEC. 2N29160 2N2017 anaes. 2N2019 2N20108 2n2920 2N20208 2N2044 2N20448 2N2045 2N20458 2N2046 2N20468 2nz072 2N2073 2N2074 INDI... 2N2076 22077 2N2078 2n2079 mae 2N2068 2N2980 2nz090 2N2001 aoa 2n2902 2n2006 2naoor ‘23002 ‘2n2003 2N3008 22005 2013006 2na007 2N2008 2na012 20015 23021 2ng022 2va023 2na024 2va025 2n2026 2N0098 2wa037 23038 zac... 2wso40 TEXAS INSTRU. PAGE POWER, Power POWER POWER POWER POWER POWER PoweR POWER, POWER POWER POWER an 4175 POWER POWER POWER POWER Power POWER a7 an a1 418 401 IMENTS TYPE NUMBER INDEX VPE NO. 2na042 2va046 203045 2N2046 2us047 2N048 2n3049 23060 2N081 2va0s2 203053 2v206s 2Nt16 2na017 2naaee 2N3245, 2N3260 2Na2508 2Ns281 2N32518 2ua2s2 2N9263 2N3263 2Na266 2Na266 2na266 2N3320 N30 2N3331 2naaae 2N3947 2Naa48 2No349 2N3360 2waast uaa? 2na18 2wsaie 2n2420 2Noa21 2N3499 Naaao 2usaas anaase 2459 203460 2vaas7 2naaoe 203405 2No4esA SEC.PAGE 18 a1 4183 ag 41a 13 4185, 4185 4185 4107 199 POWER, 4-190 4.192 4.194 4.194 POWER POWER POWER POWER, POWER 4.208 4210 4210 4210 4212 az 428 ans osTYPE NUMBER INDEX 2N3870 2Na671 2N3672 2na702 23703 2Na708 2Ng705 2n3706 2na707 2N3708 2N3700 2na710 2Ng7"1 2naria 2narie 2Na7i5 2narie 2na719 2na720 2na726 2NB7248 2n3725 2Na726A 2Na734 2Na725 2na771 2na772 2Na780 POWER-Reter to The Power Semiconductor Data 800k for Delon Engineers, Fist Edition (CC-404) a7 Power 420 am 420 420 428 4250 4750 4.282 42562 472 4.264 4264 4254 4-254 4.254 POWER POWER POWER POWER POWER POWER 4286 4.256 4.256 4.256 4202 4.262 POWER Power POWER 2N3810 2noer1 2N3819 2Noa21 2Ns822 2No924 2N3829 Na TEXAS INSTRUMENTS SEC.PAGE POWER POWER POWER 4.265 4265 4267 4267 4.207 4261 4207 4267 4270 427 aan an aan aan 478 4200 Power POWER POWER POWER POWER POWER POWER POWER POWER BRERRRREEE? EERRREESSEGg2222 RERRERRREGE q G88 POWER POWER BEERETYPE NUMBER INDEX TYPENO. —SEC-PAGE TYPENO. ——_SEC-PAGE TYPENO. —_-SEC.PAGE 2NAAIBA 4345 2nso7. . . . . 4385 ‘2Ns395 POWER Dens... 0308 Neos |... 4.067 2N5306. POWER anaes... 450 2N65050 4367 2087 + POWER 2Ness2 2... 4360 2NSOG |... POWER 2NSSES |... POWER anes... 4350 2NSO61 |... POWER 2N5380 POWER zee... 4.960 26062 += POWER 25200 POWER 2365 4362 ‘2N5063 POWER 2N5007 4403 anaes 4356 2Nses 2... POWER ‘2N5308 2. 4408: INABA... 4.386 2NSOS7 POWER 2Ns00 4407 2387 4355 2vs06s POWER :2N5400 aa 2NAB57 4385 25059 POWER 2nstor aa Nees 385, N50. 437 mney a6 2NAO5EA 4355 gee) is 4371 Nea, a8 2NA350 4355, 2Ns147 POWER 2vseao 4418 2NAB5OA 4.956 anes POWER 2N6450 aa 2n4a80 4385 2NSH49 POWER 2Ns4s1 ate 2Na9608 4355, ‘2NBI50 POWER 25460 4420 2Ne961 4355 2ns151 POWER 2NsAG1 4420 NABI, 4.385 2NSIE2 POWER 2vsse2 4420 2vas01 4380 2vs183 POWER 2N5525 aan ‘aNeso2 30 Ns. POWER 2N5526 azz 2Naa03 4380 26187 POWER 2NS545 4423 2vaaoa 4389 ‘25209 4375 2N8546 4429 2N4g01 POWER 2Ns210 4378 2N8547 4423 2Ne002 POWER 2Ns219 an 2uss49 4405 ‘2Neo03 POWER 2N6220 4379 218550 427 ‘2NA904 POWER 2Ns221 acer 2usss1 an 2N4905, POWER 2Ns272 4963 25671 POWER 2Nao08 =... . POWER 2NS223 |. 4388 2NSB72 |... POWER 2Nagi3.. . . . POWER 2N525 4387 2683 POWER anasa |... POWER 7NE2B 4390 2N5684 POWER Nos... . POWER 2N8227 + 4901 2N66BS + POWER pao? 4361 2Ns241 POWER 2NS685 |. . POWER 2Nao48 4381 2Ns245 + 4303 2NS758 |. POWER 2Nao49 4381 2Ns246 + 4383 2NS780 |. |. POWER 2Na006 4363 2Ns207 4993 2N5760 POWER en en 4363 2NEMB 4.306 2N5887.... POWER ‘2Neo08 PoweR 2Nsa01 POWER 2NS86B . |... POWER mage POWER 2Ns002 POWER 2NS80 |. . POWER ‘25000 POWER 2Ns203 POWER 2NE87 . 2... POWER 2N6001 POWER 2vssaz 4307 2Ns871 POWER aNsooz . . . . . POWER 2Ns333 POWER 2NSB72. |... POWER. 205003 ++ POWER 2Nsass 4.400 2N5873 POWER 2NS003 |... POWER. 2N5350 4400 2N8874 POWER, 2NEOO POWER 2Ne960 2... 4400 28875 POWER 2NSOOS |... POWER 2nsost |)... 4.400 28876. POWER 2vs038 * POWER 2Nee2 4400 2vs877 POWER 2N8029 POWER 2NB963 |... 4400 seas POWER 2NSOS =... 4386 25364 ++ 4400 2NSBTO |... POWER meee 2. 4365 anes... POWER 2Ns@80 POWER POWER—Aeter to The Power Semiconductor Date 200k for Design Engineers, Fret Edition (C404), TUE TEXAS, INSTRUMENTSTYPE NUMBER INDEX TyreNo. —ste.Paae TreNo. _ste.Paae TPeNo. —se0-Paae antes... POWER Wen aaa aera. aa eee 2 rover gue os aaa sra00s e140 ansees |). powen ms eae? pstzeo) | 860 ame ||) | powen aye aan svaoet |) | | aos avons || poweR gun aaa AsTeQoIA | | | 4208 anseos |). owen ae ||| aan nsroona ||| | 4200 cone rower aye ll aaa ners |) | 4am aes |). || POWER moe) aso aero? || aaa aww ||) | powen sie |) aa asrawoe ||| as wet sam mito.) | aa ‘nsT2808 sam 2see0 waz aut = erases |) | zat meat tam pie 11) fase asresn 11. 4205 weosr 1). a miss aa asrasra ||| 423s avsees || am pais 2 ass asreas || 422 aere aa auitea ase prion tae vert? aa ante aa nsrosaa aa verte “= engn 2 aaa asvaes | as neva? owen aus as6 asraror aaa 2et20 rowen anisva sas rare aa 2nez70 POWER aise a6 sra709 az mez ||| rower paisea | ass nerono |. 4354 avers 11) owen miss. | 400 aera 1. aaa sears rower anes ase asraa |) 4276 vex? rowen antes ‘set perm || 428 avert rowen nice ‘ace nereeaa 1) 4are verze rower aie 67 eran a2 nets POWER aNI7 67 sro008 azn 2ves20 POWER ain eas ASrao0e ‘ama 2N0927 rower suis on sra0s m8 neta rower a0 aan fasTso06 ‘200 2ve rower awaca aan psra0%s 208 neo rower ovata “an fnsraoa? ‘ce mises rowen aN ears saa 08 ves? rowen owa0s “78 nsra029 8 nese rower aN708 oan asvaose sn anes ||| powen anor ae psa aan avon | POWER gms 1 ‘406 nsraoso 1) aan 2N6E6 «owen awa oa rast eat aneasr 2) | owen guate 1) 2) ane ssraost aan anew 1) aaar mia | am8 never 1. 43% mnewo 1) sear aa 26 asratae aa muoss 2) aas mae 98 fnsraias sa muease 2) | aaa et 08 asratas aan moos | aaa guar aoe asrea san mows | aaa asvoa || air psa |). 4a wow 0 msraowa aa aera a0 newez ue asraiea |). | 491 nsraz00 ‘aos 2vewes ae aero || 4a noveast 1. 4338 mnowe 21) aes asvarz ‘101 nsveaoa |.) | aan mwa 1 aes ase | a0 nsreaaa |) | 4oM0 POWERRefer to The Power Semiconductor Date 800k for Design Engineers, First Edition (CC-404), —— — os Texas, INSTRUMENTSTYPE NUMBER INDEX TYPENO, ——SEC.PAGE TYPENO. —SEC.PAGE TYPENO, ——_SEC.PAGE asta 6... 434d Asra028 4308 ‘r4s0 a ASSO |... 4343 astéo7 |... 4308 ifieet ee ore ASTSOSB 4360 ABT¢028 4.308 ‘rae 5 AsTsoS 4.969 AsTa029 4.306 mss st ‘ASTS008 4an asvass |... 4311 Tusa astog7 1... 4a ABTA050 asn Tass. + POWER astsi72 4373 agraoco 4311 Tus? 2... POWER AsTs200 4378 astast 2... 4311 Tus2 a ABTS210 + 4378 asrane2 aan Tae asTs219 4377 Agrsi72 «an Tweet ‘ABTS220 a3 ozrats . 450 Tues astsa21 2. 4381 ozr2218 497 Tu96 .. : ABTS223 4.395 2722188 497 T1880 ton ASTS225 |. . 4387 pera 2... 497 Test... 107 AsTs22 4.200 2T22100 497 Ti131-1136 ave27 2... 4.301 pret... 4.184 SERIES... . POWER AsTsdoo |. 41d xT... 4154 Ti151-1186 AsToM1 oad 272908 184 SERIES... . POWER ABTBA60 4420 DzrzO6A |. 4.154 TICSERIES |. POWER AsTsse1 4420 G129 107 1072 asTsasz 4420 6130 Tio, ior ABTSS50 aaa HY mow 2... 1072 ABTE561 aan 435 Tw2 2... . 1072 ASTENG 4435 #38 Two2ta 1. 1076 asten7 4438 460 W220 1076 AsTeNe 4495 Hot T2A |... 1076 asTeuo 4430 62 TMA |... 1076 ABTSA50 4439 S400 110260 1076 aersz2 |... 4380 1.8600 TiD26a 2. 1078 ATTs391 4.208 carzaz2 TWwaA ... |. 1076 ATTEOOIA |. | 4208 272905, T1D30a 2. 1076 Arse. |... 4-208 onrazaa Two3t ++ 1082 ATT5172 an 0213726 Tios2 toa ATT]... 4431 Toe, wss .... 1082 ArT6028 4431 mist T1D34 se. 1088 ABTON 7 182 35 1082 ARTAOMA . 47 1153, ws 1082 AeT3301 4706 Tis 037 C2. 1082 ABTSOIA + 4708 TH55 T1038, 1083 ABTs992 4-208 186 1039 1083 ABT3702 4250 T187 T1040 10.85 ASTa703 4750 158 we... 1088 AgTs74 6... 4782 88 we... 1085 AgT3705 2... 4282 T60 T1043, 1085 ABTSI06 4252 m7 Te 2... 1088 ABTs707 2 4288 ™m Tibi es AnaT3708 4258 W3 ol... Tir... . 1076 ASTI700 «|... 4254 Wa 2. 1069 wor 2. 1076 ABTSNIO 4254 nee 1080 ws 2... 1076 asra7i1 4254 THaSA SERIES |. POWER rio126 1076 (OPTO™ Rate 12 The Optoeiectronies Geta Seok for Design Enginers, Fire Editon (CC 406). POWERReter 1 The Pomer Suriconductor Bets Bock for Deign hginasr, Fle Calton (26-404) Ft FOFOEFTFTHEEFTE™_e_ eRe ™94eW@PN-"=’Yanm™o™m“°"5™NMmm— TEXAS INSTRUMENTSTYPE NUMBER INDEX —— TVPENO. —SEC-PAGE TYPENO, —SEC.PAGE TYPENO. —_—SEC.PAGE Twos . 2... 1076 TWPSERIES . . . POWER T8137... 4808 Tw . 2... 1076 Tis2s 2... 4497 s138 4548 wre... . 1076 i828 + 4407 Twa... 10108, TiD130 +. 1076 1827 ss 4497 Tw2 52... 10108 Tipster 1078) mis? 4890 Tw... 10105 muors2 + 1076 T1838... 4490 twat... 10107 Twos |... 1076 Tiss ce. 4601 Tw25, fs. 10107 wise... 1076 i888 4503 Twvs068 10-109 Tote 1090 THs... 4808 Tw907 ss 10.109 Tips |... 1090 Tise2A 4505 Tiv0g |... 104100 TIF... 1090 Tise3a 4.508 TIXL SERIES |. OPTO Toa 10.90 TISeA 4.505 Tue... tt TWDMoF .. . 1090 Tiseo ... . 4807 TiovoN |... 1090 170.2... 4807 TMF... 1090 873 4500 Tiowin |... 1090 vise 4.500 ipiazF 1080 TW 4500 sion +. 1080 tise. asi Tovar +. 1090 T1886 te. 45M Town + 1090 T1887 Tir |... 1090 Tiesost es ( eceie ToMaN 2... 1090 ‘Tis90m 4516 Two... 1096 Tse. . 488 woe... 1096 TisoM 1... 4516 Twsss |... 1086 mise... 4816 Twos... 1096 TWs9M 2... 4518 woes | 1098 risog.... 4516 jw 11... 1088 Tiss 1, 4818 mre ..... 1098 894 : 2. 4508 TIOMISF . 10-100 T1896 2 4518 Tomas)... 10100 Tise6 es 4518 THOMiesF . . 10:00 97 2. 4518 Tomes)... 10100 Tis03 + 4518 TWoMieaF |... 10-100 Tis. 4518 Tuomes) .. 10100 miso... | 4820 Tomes 10-100 Tision .. . . 4820 Tomiss) 10-100 718105 as THomiesF . 10:00 misiog 4-625 ThomtB6s 10-100 18109 5 4528 TwoMassF .. . . 10-100 misi10 2 4528 Tuomas)... 10100 visit... 488 Twomassr . |. 10:00 misn2 2... 4590 Tuomas)... 10:00 m1s126 4596 woMa6ar 10.100 18126 4538 Tuomasay .. . . 10100 18128 asa TuoMzesF .. . 10-100 118129 4843 tiomaes) | 10100 nnsia3 A845 TioMaseF . . . . 10-100 mista 4505, Tomes) |... 10100 T1s138, 458 Tisenles - - . oFTO rs136 4845 Dean Engineer, Fir Eaton (CC-405). lock for Design Enginaors, Fire Eaton {CC-404), TEXAS, INSTRUMENTSGlossaryINDEX General ‘Terms and Definitions ee Letter Symbols, Terms, and Definitions ‘Signal Diodes and Rectifiers Terms and Definitions Letter Symbols, Terms, and Definitions Voltage-Rogulator and Voltage-Reference Diodes Terms and Definitions Letter Symbots, Terms, and Definitions Voltage-Veriable-Capacitance Diodes ‘Terms and Definitions... « Letter Symbols, Terms, and Definitions Multijunction Transistors Terms and Definitions Letter Symbols, Terms, and Definitions Unijunction Transistors ‘Terms and Definitions Letter Symbols, Terms, and Definitions Field-Effoct Transistors ‘Terms and Definitions. - Letter Symbols, Terms, and Definitions ‘Standards Documents 1 13 7 7 12. 112 145 17 1.27 127 129 131 137GLOSSARY GENERAL —————$—$——— GLOSSARY Introduction This glossary contains letter symbols, abbreviations, terms, and definitions commonly used with semiconductor devices. ‘Most of the information was obtained from JEDEC Publication No. 77. That document has over-riding authority where any conflict may occur. GENERAL ‘Terms and Definitions Term Definition anode aren : ‘The electrode from which the forward current flows within the deviee. anode “Pp cathode ae forward current Dipolar transistor. . ‘A transistor that uilizes charge carriers of both polarities, breakdown eee ‘A phenomenon occuring in reversebiased semiconductor junetion, the initiation of whichis observed asa transition from region of high small-signal resistance to a region of substantially lower smallsignal resistance for an increasing magnitude of reverse current. ‘breakdown region : ao ‘A region of the voltampere characteristic beyond the initiation Of breakdown for an increasing magnitude of reverse current. bbreckdown voltage... + ++ + The voltage measured at a specified current in # breakdown region. (Ref MIL-S-195000 Par. 20.3) blocking ee A state of a semiconductor device or junction which essentilly pprovonts the flow of current. cathode . : +++ ++ The electrode to which the forward current flows within the device. For diagram, see “anodk electrode. oe +++ 1+ An electrical and mechanical contact to @ region of @ semi conductor device. forwardbies The bias which tends to produce current flow in the forward direction tE > current flow forward direction. : The direction of current flow which results when the etype semiconductor region is at @ positive potential relative to the type region. (Ref ISEE 263) opencircuit . . + «A cireuit in which halving the magnitude of the terminating impedance does not produce a change in the parameter being ‘measured greater than the required accuracy of the measurement, (Ref MIL-S-195000 Par. 20.8) rectifying junction. see = + A junction in a semiconductor device which exhibits asym- ‘metrical conductance, ee Texas INSTRUMENTS12 GLOSSARY GENERAL reverse bias. ee reverse direction semiconductor device semiconductor diod@ os semiconductor junction (commonly referred to as{unction) shortcireuit, 6 ee smallsignal 0 =. static value terminal... thermal resistance (steady-state) transistor Definition ‘The bias which tends to produce current flow in the reverse direction. a current flow ‘The direction of current flow which results when the rtype semiconductor region is at @ positive potential relative to the p-type region. {A device whose essential characteristics ‘of charge carriers within a semiconductor. ‘governed by the flow =. + A semiconductor device having two terminals and exhibiting & nonlinear voltage-current characteristic; in more restricted usage, 1 semiconductor device which has the asymmetrical voltage: current characteristic exemplified by a single p-n junction. (Ref IEEE 270) {A region of transition between semiconductor regions of different electrical properties (e.9., nin, p-n, ppt semiconductors), or between a metal and a semiconductor. A circuit in which doubling the magnitude of the terminating impedance does not produce a change in the parameter being measured that is greater than the required accuracy of the measurement, (Ref MIL-S-195000 Par. 20.16) [A signal which when doubled in magnitude does not produce = change in the parameter being measured that is greater than the required accuracy of the measurement. (Ref MIL-S-19500D Par. 20.17) ‘A nonvarying value or quantity measured at @ specified fixed point, or the slope of the line from the origin to the ‘operating point on the appropriate characteristic curve. (Ref IEEE 255 Par. 2.2.1) ‘An externally available point of connection to one or more electrodes, “The temperature difference between two specified points or regions divided by the power dissipation under conditions of ‘thermal equilibrium. (Ref IEEE 223) ‘The change of temperature difference berwaen two specitiod points oF regions at the end of e time interval divided by the step- funetion change in power dissipation at the beginning of the same time interval causing the change of temperature difference. (Ref IEEE 223) ‘An active semiconductor device capable of providing power ‘amplification and having three or more terminals. (Ref 1EC 147-0 Par..0-2.8) — eee Texas, INSTRUMENTSLetter Symbols, Terms, and Definitions Symbol Term For NF average noise figuret average noise factor? ForNe* spot noise figuret spot noise factort te forward current, de ba noise current, equivalent input In reverse current, de Re (formerly 8) thermal resistence Roca thermal resistance, caseto-ambient Rosa ‘thermal resistance, formerly 03.4) junetion-to-ambient Fasc ‘thermat resistance, (formerly 64.0) iunction-to-case stors21 forward transmission coefficient GLOSSARY GENERAL Definition The ratio of (1) the total output noise power within 2 designated output frequency band when the noi temperature of the input termination(s) is at the reference noise temperature, To, at all frequencies to (2) that part of (1) caused by the noise temperature of the designated signalinput termination within 2 designated signal-input frequency band, The ratio of (1) the total output noise power per unit bandwidth (spectral density) at 2 designated output frequency when the noise temperature of the input termination(s) is at the reference noise temperature, To, at all frequencies to (2) that part of (1) caused by the noise temperature of the designated signal-input termination at a designated signal-input frequency. ‘The de current that flows through @ semiconductor junetion in the forward direction. The noise current of an ideal current source (having @ source impedance equal to infinity) in parallel with ‘the input terminals of the device that, together with the equivalent input noise voltage, represents. the Noise of the device, The de current that flows through a semiconductor junction in the reverse direction Refer to thermal resistance (steady-state), page 1-2. The thermal resistance (steady-state) from the device ase 10 the ambient. ‘The thermal resistance (steady-state) from the semiconductor junction (s) to the ambient. The thermal resistance (steady-state) from the ‘semiconductor junction(s) to a stated location on the The ratio of the voltage at the output port to the voltage incident on the input port with the output Port terminated in a purely resistive reference impedance equal to the impedance of the source of ‘the incident voltage. se often uted tor symbols F and F: however, the symbole F and F are preferred. ty in decibate (8. _ Texas INSTRUMENTS INCORPORATED 13GLOSSARY GENERAL EE EEEEESEEEE Symbot Term Definition siorsi Input reflection ‘The ratio of the voltage reflected from the input port coetficient ‘to the voltage incident on the input port with the ‘output port terminated in a purely resistive reference impedance equal to the impedance of the source of the incident voltage. mee utp rfiction The rato of the voltage etlactad frm the output coat port to te voltage Inelgenton Hw output port wth the Inout port termina in a. purly rosie ference impedance must the impedance ofthe tours of te incden von. srorsi2 reverse transmission ‘The ratio of the voltage at the input port to the coefficient ‘voltage incident on the output port with the input port terminated in a purely resistive reference impedance equal to the impedance of the source of ‘the incident voltage. Ta ‘free-air temperature ‘The air temperature measured below a device, in an or environment of substantially uniform temperature, ambient temperature cooled only by natural air convection and not materially affected by reflective and radiant surfaces. (Ref MIL-S-195000 Par. 20.20.1) “The temperature measured at a specified location on the case of # device, (Ref MIL-S-19600D Por. 20.20.2) Te ‘case temperatu w virtual junction 'A temperature representing the temperature of the ‘temperature junetion(s) calculated on the basis of @ simplified ‘model of the thermal and electrical behavior of the semiconductor device. NOTE: Thie term “virtual junction temperature” is taken from IEC standards. It is particularly applicable ‘to multijunetion semiconductors and is used in publication to denote the temperature of the active semiconductor element when required in specifications and test methods, The term “virtual junction temperature” it used interchangeably with the term “junction temperature” in this publication. Tg storage temperature ‘The temperature at which the device, without any power applied, is stored. (Ref MIL-S-195000 Par, 20.20.3) i EEE 14 TEXAS, INSTRUMENTSGLOSSARY GENERAL ee Tr To cf oe Term noise temperature Symbol reference noise temperature delay time fall time ‘tum-off time ‘tum-on time Pulse time rise time storage time Definition ‘The uniform physical absolute temperature (kelvin) ‘a multiport) would have to be maintained if it (and its sources) ‘were passive in order to make available (or deliver) the same random noise power per unit bandwidth (spectral density) at a given frequency as is actually _nailable (or delivered) from the network. ‘A specified absolute temperature (kelvin) to be ‘assumed as a noise temperature at the input ports of 2 network when calculating certain noise parameters, ‘end for normalizing purposes. When the reference noise temperature is 290 K, It is considered to be the standard reference noise temperature, The time interval from the point at which the leading edge of the input pulse has reached 10 percent of ‘maximum amplitude to the point at which the leading edge of the output pulse has reached 10 percent of its maximum amplitude. (Ref MIL-$-195000 Par. 20.11) ‘The time duration during which the trailing edge of a ‘pulse is decresting from 90 to 10 percent of its maximum amplitude. (Ref MIL-S-19500D Par. 20.12) The sum of te +t. ‘The sum of ta + te. The time duration from the point on the leading edge which is 90 percent of the maximum amplitude to the point on the trailing edge which is 90 percent of the maximum amplitude. (Ref MIL-S-19500D Par. 20.15) ‘The time duration during which the leading edge of a pulse is increasing from 10 to 90 percent of its ‘maximum amplitude, (Ref MIL-S-19500 Par. 20.13) ‘The time interval from a point 90 percent of the ‘maximum amplitude on the traling edge of the input Pulse to 2 point 90 percent of the maximum ‘amplitude on the trailing edge of the output pulse. (Reef MIL-S-195000 Par. 20.14) ——————— Texas | NSTRUMENTS 15GLOSSARY GENERAL ——_—— Symbol Term Oot _ puta erage tie “The tine duration fom he point on the leading eae vihich is 6 perant ofthe maximum ampiude 10 8 point on the talng edge which Is 60 percent ofthe maximum” amoltade. (Ref MIL-S-105000 far, 20.10) | LOUTPUT PULSE 3 2 DIAGRAM ILLUSTRATING PULSE TIME SYMBOLOGY ve forward voltage, de The de voluge scrom # semiconductor junetion Associated with te flow of forward current. Va nie voltae, “Te noise voltage ofan idl voltge source (having a ecuialet input source mpadance equ 10 zoo) In saris with the input terminal ofthe device tet, together with the saulvalent input ole current, represents the nos of the doves vr revere vote, de ‘The de voltage applied to a semiconductor junction wich ceuser the current 10 flow in the reverse Section ——_— 16 TEXAS, INSTRUMENTSGLOSSARY SIGNAL DIODES AND RECTIFIERS ‘Terms and Definitions SIGNAL DIODES AND RECTIFIERS ‘Term semiconductor rectifier diode semiconductor signal diode Letter Symbols, Terms, and Definitions (For illustration of the following currents refer to diagrams on page 1-10) ‘Symbot 'E(RMS). It te TRAV). ig, IM team 'esm 'RURMS). tee te TRAV. ig IRM in(Rec). SRM(REC) ‘RRM Teen forward current {00 table, page 1-11) forward current, repetitive peak: forward current, surge peak average rectified forward current reverse current (see table, page 1-11) ceverse recovery current (see table, page 1-11), Definition ‘A semiconductor diode having an asymmetrical voltage-current characteristic, used for rectification, and including its associated ‘housing, mounting, and cooling attachments if integral with it. Graphic symbol for a semiconductor 1 semiconductor signal diode (Ref ANS 32.2): er a ‘A semiconductor diode having an asymmetrical voltage-current characteristic and used for signal detection. jer diode and For graphic symbol, see above Definition ‘The respective value of current that flows through nductor diode or rectifier diode in the forward direction. ‘The peak value of the forward current including all repetitive transient currents, ‘The maximum (peak) surge forward current having a specified waveform and @ short specified time inter: val, The value of the forward current averaged over @ full cycle of haifsine-wave operation at 60 Hz with = ‘conduction angle of 180°. ‘The respective value of current that flows through & semiconductor diode or rectifier diode in the reverse direction. The transient component of reverse current ‘associated with a change from forward conduction to reverse voltage. ‘The maximum (peak) repetitive instantaneous reverse current. ‘The maximum (peak) surge reverse current having & specified waveform and a short specified time inter- val ee TEXAS, INSTRUMENTS18 GLOSSARY SIGNAL DIODES AND RECTIFIERS EEE Symbol Term Pr. PE(AV). forward power PF. PEM dissipation (see table, page 1-11) Pre PRIAV). reverse power dissipation PR. PRM (s2e table, page 1-11) Qs stored charge Ro thermal resistance ws junction temperature tr forward recovery time pulse time te Fite time te reverse recovery time Definition ‘The power dissipation resulting from the flow of the respective forward current. ‘The power dissipation resul respective reverse current. 19 from the flow of the ‘The total amount of charge recovered from a diode ‘minus the capacitive component of that charge when. the diode is switched from a specified conductive condition to a specified non-conductive condition with other circuit conditions (as described in EIA: JEDEC Suggested Standard No, 1) optimized to recover the largest possible amount of charge. ‘See pages 1-2 and 13, ‘See page 1-4. The time required for the current or voltage to recover to @ specified value after instantaneous switching from a stated reverse voltage condition to a stated forward current or voltage condition in a given circuit. SPECIFIED RECOVERY VOLTAGE VOLTAGE [FecoveR, TiMe—— TIME: ‘Soe pages 1-5 and 1-6. See pages 1-5 and 1-6. The time required for the current or voltage to recover to a specified value after instantaneous ‘witching from a stated forward current condition to ‘a stated reverse voltage or current condition in a given circuit. SPECIFIED ‘RECOVERY ‘CURRENT TEXAS INSTRUMENTSGLOSSARY SIGNAL DIODES AND RECTIFIERS LE ‘Symbol tw vier). eR) VF(RMS). Vf. Ve. VF(AV). ve, VEM VR(RMS). Vee Ve. VAR(AV) ve. VRM VRwM VRRM Vasu Term pulse average time breakdown voltage (de, instantaneous total value) forward voltage {see table, page 1-11) reverse voltage (see table, page 1-11) working peak reverse voltage repetitive peak reverse voltage ‘nonrepetitive peak reverse voltage Definition See page 1-6. ‘The value of voltage at which breakdown occurs. ‘The voltage drop in a semiconductor diode resulting from the respective forward current. ‘The voltage applied to a semiconductor diode which ‘causes the respective current to flow in the reverse direction. ‘The maximum instantaneous value of the reverse voltage, excluding all transient voltages, which occurs ‘cross @ semiconductor rectifier diode, ‘The maximum instantanoous value of the reverse voltage, including all repetitive transient voltages but, excluding all nonrepetitive transient voltages, which ‘occurs across a semiconductor rectifier diode, ‘The maximum instantaneous value of the reverse voltage including all nonrepetitive transient voltages ‘but excluding all repetitive transient voltages, which ‘occurs across a semiconductor rectifier diode. —— TEXAS INSTRUMENTS 19GLOSSARY SIGNAL DIODES AND RECTIFIERS DIAGRAMS ILLUSTRATING SYMBOLS FOR DIODE CURRENTS AND VOLTAGES |. FORWARD CURRENT AND VOLTAGE: Maximum (peak) surge value n cenoemrrte valve Ty / L 1 —— Average sus, 180" conduction ante, Maximum (peak) tora value 60 Hr, half sine wave Saas 1eRM— Maxienuen (paBk) Trav repetitive value ‘Average valve with alternating component — eM Maximum (peak total value MW, REVERSE CURRENT AND VOLTAGE: 4 iR(AV) ~ m7 \ 'anM <= 7 Average valve with Instantaneous Meximom (paak) repetitive value Bea genaiaceeeonet Maximum (peak! total value wanna vaiavi surge value ~ cs img (peak) tots value 110 TEXAS, INSTRUMENTS | POST OFFICE ROX S012 + DALLAR, TEXAS 78222Forward Current Forward Current, Average, 180° Conduction Angle, 60-Hz, Half Sine Wave Forward Current, Repetitive Peak Forward Current, Surge Peak Reverse Current Reverse Recovery Current Forward Power Dissipation Reverse Power Dissipation Forward Voltage Reverse Voltage Reverse Voltage, Working Peak Reverse Voltage, Repetitive Peak Reverse Voltage, Nonrepetitive Peak Breakdown Voltage —— GLOSSARY SIGNAL DIODES AND RECTIFIERS -—eeo ‘TABLE OF SYMBOLS FOR CURRENT, POWER, AND VOLTAGE RAS Vas | BE Vite, [Baw Taam reat | ORY no | Sy | Mntnaneo | 4m | suacatn | teen | arnning | emt | Sta _ Component _| Component_| Component Value 'F(RMS) 7 te Te(AV) iF 'FM = = a = 'eRM - - - - - tesM IRIRMS) tr IR TRIAV) in IRM 7 _ 7 = 'R(REC) 'RM(REC) 7 7 Pe PFIAV) PF PEM ni - PR PRIAV) PR PRM VF(RMS) Ve Ve VF(AV) vF VeEM VR(RMS) ve VR VRIAV) vR VRM S S = 7 = vawm ~ - = 7 - RRM : ae - | vase = = Vier) ial MBR) 7 TEXAS INSTRUMENTSGLOSSARY VOLTAGE-REGULATOR AND VOLTAGE-REFERENCE DIODES ‘anode cathode "VOLTAGE-REGULATOR AND VOLTAGE-REFERENCE DIODES ‘Terms and Definitions voltage-reference diode voltage-regulator diode. =. Lotter Symbols, Terms, and Definitions (For illustration of the following currents and voltages refer to diagrams on page 1-13) te 'r tz, 'zK. tM u ‘Symbol ‘Torm forward current, de reverse current, de regulator current, reference current (dc, de near breakdown ki de maximurn-rated current) junetion temperature Definition “The electrode to which the reverse current flows within the device when itis biased to operate in its breakdown region. ‘The electrode from which the reverse current flows within the device when itis biased to operate in its breakdown region. ‘A diode which is normally bissed to operate in the breskdown region of its voltage-current characteristic and which develops ‘across its terminals @ reference voltage of specified accuracy, when biased to operate throughout a specified current and temperature range. (Ref IEC 147-0, Par.0-2.3) Graphic symbol for voltage-reference diode (Ref ANS Y32.2) reverse current —p> crows) Anode envelope optional ‘A diode which is normally biased to operate in the breakdown region of its voltage-current characteristic and which develops. ‘across its terminals an essentially constant voltage throughout @ specified current range. (Ref 1EC 147-0, Par. 0-2.4) Graphic symbol for voltage regulator diode. (Ref ANS Y32.2), reverse current ——te Cathode Anode ‘envelope optional Definition ‘The value of de current that flows through the diode inthe forward direction. “The value of de current that flows through the diode: inthe roverse direction. “The value of de reverse current that flows through the diode when it is biased to operate in its breakdown rogion and at a point on its voltage-current character. istic as follows: Iz: a specified operating point between 12K and tam 12x: @ specified point near the breakdown knee point based on the maximum-rated a —— TEXAS, INSTRUMENTSGLOSSARY VOLTAGE-REGULATOR AND VOLTAGE-REFERENCE DIODES ——————— Symbol Term ve forward voltage, de VR reverse voltage, de vz, ‘regulator voltage, v2M reference voltage (de, de at maximum- rated current) 2, regulator impedance, Zeke reference impedance, am (small-signal, at 12, at izk. at IZM) BREAKDOWN KNEE ‘The voltage drop in the diode, resulting from the de forward current. ‘The voltage applied to the diode which causes the de current to flow in the reverse direction. ‘The value of de voltage across the diode when itis, biased to operate in its breakdown region and at @ voltage-current characteristic 38 Vz! at Iz (see previous page) Vz: at lzm (38 previous page) ‘The small-signal impedance of the diode when it is biased to operate in fts breakdown region and at a specified point in its voltage-current characteristic 2s follows: 2g! at Iz (see previous page) 72k: at IZ (see previous page) 2zmi at IZM (see previous page) ve DIAGRAM ILLUSTRATING SYMBOLS FOR CURRENTS AND VOLTAGES e_——— Texas, INSTRUMENTS 1413GLOSSARY VOLTAGE-VARIABLE-CAPACITANCE DIODES SS \VOLTAGE-VARIABLE-CAPACITANCE DIODES ‘Terms and Definitions Term voltage-variable- ccopacitance diode (aractor diode) -wning diode Letter Symbols, Terms, and Definiti Symbol Torr ac ‘temperature coefficient of capacitance & case capacitance Gj junction capacitance ce total capacitance ca capacitance ratio ea feo cutott frequency bs series inductance " cfficiency a figure of merit 5 series resistance, ‘small-signal w junction temperature A tworter Definition minal semiconductor device in which use is mede of the property that its capacitance varies with the applied voltage. [A voltage-variable-cepacitance diode used for rf tuning. This includes functions such as automatic frequency contro! (AFC) ‘and automatic fine tuning (AFT). Definition ‘The ratio of the change in capacitance to the change in temperature. The ratio is an average value for the total temperature change, (For symbol: Ref USAS ‘Y105-1968 Par. 3.6) ‘The capacitance between the diode terminals of the ‘case with the semiconductor chip not installed or ‘with the semiconductor chip installed but not connected. ‘The small-signal capacitance between the contacts of an uninstalled semiconductor chip. The total small-signal capacitance between the diode terminals of a complete device. (Cr Ce + Cj). ‘The ratio of total capacitance at one voltage to total capacitance at another voltage. ‘The frequency at which the figure of merit Q is equal to 1 “The inductance between specified points on the diode terminals, ‘The ratio of output power to input power. ‘Two pi (2x) times the ratio of the energy stored per cycle to the energy dissipated per cycle. ‘The total smallsignal resistance between the diode ‘terminals, ‘See page 1-4. mT TEXAS, INSTRU. IMENTSGLOSSARY MULTWUNCTION TRANSISTORS ee MULTIJUNCTION TRANSISTORS rms and Definitions Term Definition bees (8) ‘A region which ties between an emitter and a collector of & junction, emitter... saturation transistor, multijunction ‘transistor and into which minority carriers are injected. (Ref. 60 IRE 28.81) = A region through which a primary flow of charge carriers leaves the base. (Ref, 60 IRE 28.51) + A-region from which charge carriers that are minority carriers in the base are injected into the base. (Ref. 60 IRE 28.$1) ‘A semiconductor junction normally biased in the reverse direction, the current through which can be controlled by the Introduction of minority carriers into the base, (Ref. 60 IRE 281) ‘A. semiconductor junction normally biased in the forward direction to inject minority carriers into the base, (Ref. 60 IRE 28.81) A base-current and a collector.current condition resulting in 2 forward:-biesed collector junction. ‘A transistor having a base and two or more junctions. ‘Typical Graphic Symbols: (Ref. ANS Y32.2) NOTE: In the graphic symbols, the envelope is optional if no element is connected to the envelope, NPA TRIODE pave TRIODE Cotctr Cotectr = €) ~€) miter Emiter NPN, DOUBLESASE PN DOUBLE-EMITTER covecter Bae Bae mc®) Emir — Emitter LY miter caitector eae 7 titer "Raterences to bane, collactor and amittar evmbolism (8, by C6, E, and a refer tothe device terminals connected to those eeplons. TEXAS, INSTRUMENTS 145GLOSSARY MULTIJUNCTION TRANSISTORS —_—_—_— Torm Definition | A PNP. thyristor that, together with two external resistors, ‘can generate @ current-voltage characteristic similar to thet of a tunijunetion transistor. The unijunction parameters n. 'BB, IP, and ty (see pages 1-27 and 1-28) can be varied by selection of 1] the values ofthe two resistors, transistor, programmable ur EMITTER, E 82 Re ANODE, Ag Interbae Resistance gp ~ RI+R2 Rt 1 Intrinsie Standot Ration = SOEs caTHODE, K > BASE 1.81 PROGRAMMABLE UNNJUNCTION CIRCUIT VaKiVesty NEGATIVE cuTorF SATURATION = —-pie- RESISTANCE —efe- = ce REG eCION Sern 10N VelVest(ea) =~ ws DIAGRAM ILLUSTRATING CURRENT-VOLTAGE CHARACTERISTIC ‘OF THE PROGRAMMABLE UNLIUNCTION CIRCUIT — 116 TEXAS, INSTRUMENTSLetter Symbols, Terms, and Definitions ‘Symbol Term Cob, interterrinal Coe, capacitance eb (collector-to-base, collector-to-emitter, emitter-to-base) open-circuit input ‘capacitance (common-base, common-emitter) Cts, short-circuit input Cies capacitance (common-base, common-emitter) Cobo. ‘open-circuit output Coco, ‘capacitance (common-base, common-emitter) capacitance (common-base, common-emitter) obs. short-circuit output Coss Ci. short-ireuit reverse Cres transfer capacitance (common-base, common-emitter) Cte, depletion iayer Cte capacitance (collector, emitter) GLOSSARY MULTIJUNCTION TRANSISTORS Definition The direct interterminal capacitance between the terminal indicated by the first subscript and the reference terminal indicated by the second subscript, with the respective junction (collector-base, collector: emitter, emitter-base) reverse-biased and. with the ing terminal (emitter, base, collector) open circuited to de, but sc-connected to the guard ‘terminal of a three-terminal bridge. ‘This capacitance includes the interelement capaci- tances plus capacitance to the shield where the shield, is connected to one of the terminals under measure- ment. ‘The capacitance measured across the input terminals (emitter and base, base and emitter) with the collector open-circvited for ac. (Ref IEEE 255) ‘The capacitance measured across the input terminals, (emitter and base, base and emitter) with the collector short-circuited to the reference terminal for 2c. (Ref IEEE 255) ‘The capacitance measured across the output terminals. (collector and base, collector and emitter) with the input open-circuited to ac. (Ref IEEE 265) ‘The capacitance measured across the output terminals, (collector and base, collector and emitter) with the third terminal shortcircuited to the reference ‘terminal for ac. (Ref IEEE 255) ‘The capacitance measured from the output terminal to the input terminal with the respective reference ‘terminal (base or emitter) and the case, (unless connected internally to another terminal) connected 10 the guard terminal of a three-terminal bridge and with the device biased into the active region. ‘The part of the capacitance across the (collector-base, emitter-base) junction that is astociated with its depletion tayer. NOTE: This capacitance is a function of the total potential difference across the depletion layer. (Ref TEC 147-0 Par. 114.8, 4.9) _—_—— TEXAS, INSTRUMENTS 147GLOSSARY MULTWUNCTION TRANSISTORS —_—_—_—<—< << —<—$—<——————— eee ‘Symbol Toren Definition FoF noise figure, average or spot See page 1.3. fnto- smattsignal short ‘The lowest frequency st which the modulss (mognk fife ciruit forward tude) of the small-signal short-circuit forward current current transfer ratio. transter ratio is 0.707 of its value at a specified low cutoff frequency frequency (usualy 1 kHz or le). (Ret IEEE 256) 1] (common-bas, common-emiter) frnax maximum frequency “The maximum frequency at which 8 transistor can be of oxilation made to oscillate under specifi conditions. NOTE: This approximates to the frequency at which the maximum available power gbin has decreased to tunity. (Ref IEC 147-0 Per. 1.4.17) tr transition frequency “The product of the madulus (magnitude) of the or common-emitter smallsignal short-circuit forward frequency st which current transfer ratio, fel, and the frequency of small signa forward toasurement when this frequency is stficiently high current transfer to that rie Is decreasing with @ slope of approx! ratio (common-emitter) mately 6 dB per octave, (Ref IEEE 255) extrapolates to unity " frequency of unity ‘The frequency at which the modulus (magnitude) of current transfer ratio ‘the common-emitter small-signal short-circuit forward current transtr ratio, Je) has decreased to unity. (Ref 1EC 147-0 Par. 1.4.19), Gps. large signa insertion ‘The ratio, usually expressed in dB, of the signe! Gre power gain (common: ower delivered to the load to the large-signal power bate, common-emitter Gelivored tothe input. Spb. small ignal insertion ‘The ratio, usually expressed in dB, of the signal Spe power gain (common- power delivered to the load to the small-signal power base, common-eritter) delivered to the input. Gre. large-signal transducer ‘The ratio, usually expressed in dB, of the signal Gre power gain (common-base, ower delivered to the load to the maximum large commorremitter) Signal power avaiable from the source. St. small signal transducer The ratio, usually expressed in dB, of the signal Gre power gein (common-base, power delivered to the load to the maximum small: commonemitte) ‘gna power available from the source. hee. static forward current ‘The ratio of the de output current to the de input bre ‘wansfer ratio (common- eureent. (Ref MIL-S-196000 Par. 30.28) base, common-emitter) ee 118 TEXAS INSTRUMENTSPootimea) or Im(hoe) hoe (real) Rethoel heb, Term smal signal short circuit forward ‘current transfer ratio (common-base, ‘common-emitter) ‘common emitter) imaginary part of the small-signal short Circuit input impedance, (common-emitter) real part of the small- signal short-circuit input impedance, (common-emitter) small-signal open- Circuit output admittance (common-base, ‘common-emitter) imaginary part ofthe smal signal open-circui output admittance, {common-emitter) teal part of the small- signal open-circuit ‘output admittance, {common-emitter) ‘small-signal open: circuit reverse voltage ‘transfer ratio (common-base, common-emitter) current, de (base-terminal, collector-terminal, emitter-terminal) ‘current, rms value of ‘alternating component (ase-terminal, collector-terminal, emitter-terminal) GLOSSARY MULTWUNCTION TRANSISTORS Definition ‘The ratio of the ac output current to the small-signal ‘2c input current with the output short-circuited to ac. (Ref MIL-S-19500D Par. 30.20) ‘The ratio of the small-signal ac input voltage to the ac input current with the output short-circuited to ac. (Ref MIL-S-19000 Par, 30.24) The ratio of the out-of-phase (imaginary) component Of the smellsignal ac base-emitter voltage to the ac base current with the collector terminal. short- circuited to the emitter terminal for ac ‘The ratio of the in-phase (real) component of the small-signal ac base-emitter voltage to the ac base ‘current with the collector terminal short-circuited to the emitter terminal for ac. ‘The ratio of the ac output current to the small-signal ‘2 output voltage applied to the output terminal, with the input opensircuited to ac. (Ref (MIL-S-195000 Par. 30.15) The ratio of the ac collector current to the outof- phase {imaginery) component of the small-signal collector-emittor voltage with the base terminal open- circuited to ae. ‘The ratio of the ac collector current to the in-phase (real) component of the small signal collector-emitter voltage with the base terminal open-crcuited to ac. ‘The ratio of the ac input voltage to the small-signal ac output voltage with the input open-circuited to ac. (Ref MIL-S-195000 Par. 30.18) ‘The value of the de current into the terminal indicated by the subscript. The rootmean-square value of alternating current into the terminal indicated by the subscript. 7—_—_——— TEXAS, INSTRUMENTSGLOSSARY MULTIJUNCTION TRANSISTORS 120 ‘Symbol cs ic. ie omcrennaring [yg gy rt at rennaring 'BEV ‘cao Term Definition ‘current, instantaneous ‘The instantaneous total value of current ito the total value terminal indicated by the subscript. (base-terrinal, collector-terminal, cemitter-terminal) axa pean i i i peg ate j ge gun DIAGRAM ILLUSTRATING SYMBOLS AND TERMS FOR CURRENTS (Ref IEEE 255) base cutoff The de current into the base terminal when current, de collector cutoff ‘The de current into the collector terminal when itis. current, de, biased in the reverse direction with respect to the ‘emitter open base terminal and the emitter terminal is open circuited. (Ret IEEE 256) ee ——————— ————— Texas, INSTRUMENTSGLOSSARY MULTWJUNCTION TRANSISTORS Symbot Ice. leer. lees. Icev. TIE 2(0ff) Heclofs) ‘ees Imtyie) Term collector cutoff ‘current, de, with (base open, resistance between ‘base and emitter, base short-circuited to emitter, voltage between base and emitter, circuit between ‘base and emitter) emitter cutoff current emitter cutoff ‘current, de, collector open ‘emitter-collector offset current emitter cutoff current, de, base short-circuited ‘to collector Definition ‘The de current into the collector terminal when itis biased in the reverse direction® with respect to the ‘emitter terminal and the base terminal is (es indicated by the last subscript letter es follows) = opencircuited. returned to the emitter terminal through @ specified resistance. = short-circuited to the emitter terminal. \V= returned to the omitter terminal through 2 specified voltage. Xs retuned to the emitter terminal through a specified circuit. (Ref IEEE 255) "For these parameters, the collector terminal is considered to be biased in the reverse direction when it is made positive for N-P-N transistors or negative for P.N-P transistors with respect to the emitter termin ‘The current into the emitter-1 terminal of a double- emitter transistor when the emitter-1 terminal is biased with respect to the emitter-2 terminal and the ‘transistor isin the off state (the collector-base diode is not forward-biased) with specified termination of the collector and base terminals. ‘The de current into the emitter terminal when it is biased in the reverse direction with respect to the base terminal and the collector terminal is open- circuited. (Ref IEEE 255) ‘The external shortcircuit current between the ‘emitter and collector when the base-collector diode is, reverse biased. ‘The de current into the emitter terminal when it i biased in the reverse direction* with respect to the collector terminal and the base terminal is short: circuited to the collector terminal. (Ret IEEE 265) “For this parameter the emitter terminal is considered to be biased in the reverse direction when it is made positive for N-P-N transistors or Negative for P-N-P transistors with respect to the collector terminal, ‘See preferred symbol yielimeg) ee TEXAS INSTRUMENTS INCORPORATED. 121GLOSSARY MULTIJUNCTION TRANSISTORS —_—— Symbol Term Definition Iml¥oe) Soe preferred symbol Yoetimag) ly noise current, See page 1.3 equivalent input WF or NF* re, average or spot ‘See page 1-3. Pip. {arge-sgnal input ‘The product of the large-signal ac input current and mE power (common-bese, voltage with the comman reference terminat circuit commonemitter) configuration. Pip. sal signal input “The product of the smeltsignal a¢ input current and Pie power (common-base, vyoltage with the common reference terminal circuit common-emitter) configuration. Pos. farge-signal output ‘The product of the large-signal ac output current and. PoE power (commmon-bese, voltage with the common reference terminal circuit common-emitter) configuration. Pob. small-signal output ‘The product of the small signal ac output current and Poe power (common-base, voltage with the common reference terminal circuit, common-emitter) contiguration. Pr total nonreactive ‘The sum of the products of the de input currents and. power input to all voltages, Le, Terminals Vpe"ls + VoE-Ic or Veesle + Vop"Ie ree collector-base The product of the intrinsic base resistance and time constant collector capacitance under specified small-signal conditions. ree (sat) saturation resistance, The resistance betwoon the collector and emitter collector to-emitter terminals for the saturation conditions specified. (Ret IEEE 255) Relvie) See preferred symbol Vie(eal) Retvoe) See preferred symbol Yoe(real) Fete2(0n) smallsignal emitter- ‘The smollsignal resistance between the emitter emitter on-state terminals of @ doubleemitter transistor when the resistance base-collector diode is forward:biased. Ro thermal resistance ‘See pages 1-2 and 1-3. #0 0r 521. forword transmission coefficient >] The respective forward or reverse transmission Ste oF S216 (common-base, common-emitter] > coefficient with the transistor in the indicated configuration. See pages 1-3 and 1-4 SbF Stab. reverse transmission coefficient se OF 8129 (common-base, common-emitter) IF and NF abbreviation ae oftan used for 29m 12 Texas INSTRUMENTSGLOSSARY MULTWJUNCTION TRANSISTORS SU Un Uren ‘Symbol Sib OF S1tb, Bie OF S116 Sob oF $22, $00 OF $226 cere g gered Vas. Vee Vec. Vee. Ves. Vee, Ves. Vec eb Yea. eb. Yee VieR)c80 (formerly BVcgo) Term input reflection coefficient (common-base, common-emitter) ‘output reflection coefficient (common-base, common-emitter) junction temperature delay time fall time ‘turn-off time ‘umn-on time Pulse time rise time storage time se average time ‘supply vottage, de (ese, collector, emitter) voltage, de or average (base-to-collector, bbase-to-emitter, ccollector-to-bese, collector-to-emitter, ‘omitter-to-bece, emitter-to-collector) voltage, instantaneous value of alternating component (bese-to-collector, bbase-to-omitter, collector-to-base, collector-to-emitter, emitter-to-hase, ‘emitter-to-collector) breakdown voltage, collector-to-base, femittor open. Definition ‘The respective input or output reflection coefficient with the transistor in the indicated configuration. See page 1-4. ‘See page 1-4, See pages 15 and 16. See pages 1.5 and 1-6. ‘The sum of t +f, See pages 15 and 16, “The sum of t+ ty See pages 1.5 and 16. See pages 1-5 and 1-6 See pages 15 and 16. ‘See pages 15 and 16 See page 1-6. ‘The de supply voltage applied to a circuit connected ‘to the reference terminal, ‘The de voltage between the termina i first subscript and the reference terminal (stated in ‘terms of the polarity at the terminal indicated by the ficst subscript), The instantaneous value of oc voltage between the terminal indicated by the first subscript and the reference terminal. ‘The breakdown voltage between the collector terminal and the base terminal when the collector terminalis biased in the reverse direction with respect. to the bese terminal and the emitter terminal is open-circuited. (Ref IEEE 256) es TEXAS INSTRUMENTS 123124 GLOSSARY MULTIJUNCTION TRANSISTORS —S Symbol ‘W4BR)CEO (formerly BVcEO} ViBRICER (formerly BVcER) Vipryces. (fromerty BVces) ‘V(BRICEV (formerly BVcev) ‘ViBR)CEX (formerly BVCEX) WiBRETE2 V(BRIEBO. (formerly BVEBO) ‘VipR)ECO, (formerly BVeco! Veaiti: Voeifl- VeBiti): Veciti) Term breakdown voltage, collector-to-emitter with (base open, resistance between base and emitter, base short-circuited to emitter, voltage between ‘base and emitter, Gireuit between ‘base and emitter) emitter-emitter breakdown voltage ‘breakdown voltage, ‘emitter-to-base, collector open ‘breakdown voltage, ‘emitter-to-collector, base open ‘de open-circuit voltage {floating potent (collector-to-bese, collector-to-emitter, emitter-to-base, emitterto-collector) Definition ‘The breekdown voltage between the collector terminal and the emitter terminal when the collector terminal is biased in the reverse direction® with respect to the emitter terminal and the base terminal is (as indicated by the last subscript letter as follows): = opencircuited. R-returned to the emitter terminal through ‘specified resistance. short-ciceuited to the emitter terminal. V=retumed to the emitter terminal through specified voltage. returned to the emitter terminal through = specified circuit (Ref IEEE 256) “For these parameters, the collector terminal considered to be biased in the reverse direction when it is made positive for N-P-N transistors or negative for P-N-P transistors with respect to the emitter terminal ‘The breakdown voltage between the emitter terminals, of a double-emitter transistor, with specified termination between collector and base. ‘The breakdown voltage betweon the emitter and base ‘terminals when the emitter terminal is biased in the reverse direction with respect to the bese terminal ‘and the collector terminal is open-circuited. (Ref IEEE 255) ‘The breakdown voltage between the emitter and collector terminals when the emitter terminal biased in the reverse direction” with respect to the ‘collector terminal and the base terminal is open circuited. “For this parameter the emitter terminal is considered to be bissed in the reverse direction when it is made positive for N-P-N transistors oF negative for P-N-P transistors with respect to the collector terminal ‘The de open-circuit voltage {floating potential) between the terminal indicated by the first subscript ‘and the reference terminal when the remaining ‘terminalis biased in the reverse direction with respect to the reference terminal. (Ref IEEE 255) —_— TEXAS INSTRUMENTSGLOSSARY MULTWUNCTION TRANSISTORS — _ Symbol eso Vee(or) Veetea) Vceo, VoER. Vers. Veev. Veex VeBo VECIofs) Mere2(0%9)| laVerE2I0ts)laig JAVErE2(0f)l4T Va Term collector-to-base voltage, de, emitter ‘open collector-emitter offset voltage saturation voltage, collector-to-emitter collector-to-emitter voltage, dc, with (base open, resistance between ‘base and emitter, base short-circuited to emitter, voltage between base and emitter, Circuit between base ‘and emitter) emitterto-bese voltage, de, collector open emittercollector offset vottoge magnitude of the emitter-emitter offset voltage ‘magnitude of the change in offset voltage with base current magnitude of the ‘change in offset voltage with ‘temperature noise voltage, equivalent input Definition ‘The de voltage between the collector terminal and the ‘base terminal when the emitter terminal is open: circuited. ‘The open-circuit voltage between the collector and emitter. terminals when the base-emitter diode is forward:-biased. ‘The de voltage between the collector and the emitter ‘terminals for specified saturation conditions. (Ref IEEE 255) ‘The de voltage between the collector terminal and the ‘emitter terminal when the base terminal ie (as indicated by the last subscript letter as follows): (0 open circuited. Reroturned to the emitter termi specified resistance. ‘S short-circuited to the emitter terminal. ‘Ve returned to the omitter terminal through 2 specified voltage, X= returned to the emitter terminal through a specified circuit, I through a ‘The de voltage between the emitter terminal and the base terminal with the collector terminal open- circuited. ‘The open-circuit voltage between the emitter and collector when the base-collactor diode is torward- biased. ‘The absolute value of the open-circuit voltage between the two emitters of a doubleemitter ‘transistor when the base-collector diode is forward- biased. ‘The absolute value of the algebraic difference between the emitter-emitter offset voltages of & double-emitter transistor at two specified base ‘The absolute value of the algebraic difference between the emitter-emitter offset voltages of a doubleemitter transistor at two specified ambient ‘temperatures ‘See page 1-6, oo Texas INSTRUMENTS 125126 GLOSSARY MULTWUNCTION TRANSISTORS — eee Symbol Vat Vier vie Vib. Vie imag) Imtyie) Yie(reat) Relvie) Yob- Yor Yootimag) Im(¥oe) Yootreai) Relvoe) Ye. vee Term reach-through (punch-the voltage ‘small-signal short circuit forward: transfer admittance (common-base, common-emitter) small-signal short circuit input admittance (common-base, common-emitter) Imaginary part of the small-signal short-circuit input admittance {common-emitter) real part of the small-signal short circuit input admittance {common-emitter) ‘small signal short- circuit output ‘admittance (common-base, ‘common-emitter) imaginary pert of ‘the small-signal short-circuit output ‘admittance {common-emitter) real pert of the ‘small-signal short- circuit output admittance {common-emitter) smal signal short- cireuit reverse tranefor admittance (common-base, common-emitter) rou) Definition That value of reverse collector-to-base voltage at which the space-charge region of the collector-base junction extends to the spacecharge region of the emitter-base junction. (Ref 1EEE 255) ‘The ratio of rms output current to rms input voltage with the output short-circuited to ac. ‘The ratio of rms input current to rms input voltage ‘The ratio of rms input current to the rms outof- phase (imaginary) component of the input voltage ‘The ratio of rms input current to the rms in-phese {real) component of the input voltage with the output short-circuited to ac. ‘The ratio of rms output current to rms output voltege ‘with the input short-circuited to ac. ‘The ratio of rms output current to the outo-phese imaginary) component of the rms output voltage ‘with the input short-circuited to ac. ‘The ratio of rms output current to the in-phase (real) component of the rms output voltage with the input short-circuited to ac. ‘The ratio of rms input current to rms output voltage with the Input short-circuited to ac. eee TEXAS INSTRUMENTSGLOSSARY UNWJUNCTION TRANSISTORS UNIJUNCTION TRANSISTORS: ‘Terms and Definitions Letter Symbols, Terms, and Definitions Symbot Term n intrinsic standoff ratio tB2{mod) ‘interbase modulated current 'e820 (peak-point current ) raters 0 the device Definition ‘A region of a semiconductor device into which minority carriers are injected. ‘A region from which charge carriers that are minority carriers in the base are injected into the base. (Ref. 60 IRE 28.51) ‘A semiconductor junction normally biased in the forward direction to inject minority carriers into the base. (Ref 60 IRE 28.81) The point on the emitter current-voltage characteristic cor: responding to the lowest current at which dVepi/dle = 0. See page 1-16. ‘The point on the emitter current-voltage cheracteristic corres: ponding to the second lowest current at which dVEBq /dlE = 0. ‘A three-terminal semiconductor device having one junction and a stable negative-esistance characteristic over a wide temperature, range. Graphic symbols for unijunction transistors (Ref, ANS 32.2): N-2 (P-Type Base) PN (N-Type Base) =H emitter ae emitter base 1 base 1 NOTE: In the graphic symbols, the envelope is optional if no element is connected 10 the envelope. Definition ‘The ratio (VP—VFI/VB2B1, where VF is the forward voltage drop of the emitter junction, ‘The current into the base-2 terminal when the emitter ‘current is greater then the vallay-point current. ‘The current into the emitter terminal when it is biased in the reverse direction with respect to the bbave-2 terminal and the base-1 terminal is open: circuited, ‘The emitter current at the peak point. minal connected to thow resin. TEXAS, INSTRUMENTS 127GLOSSARY UNWJUNCTION TRANSISTORS —_—_—— Symbot Term Definition v valley-point current “The emitter current atthe valley point. "8B Interbase resistance ‘The resistance between the two bases with the ‘emitter current equal to zero, w junction temperature See page 1-4 tp pulse time See pages 1-5 and 1-6. w pulse average time Sea page 1-6. Vezet Interbase voltage ‘The de voltage between base 2 and base 1 Veet (sat) emitter saturation ‘The forward voltage between the emitter and base 1 voltage at an emitter current greater then the valley-point current. ost base-1 peak “The peak voltage measured across the resistor in series voltage with bese 1 when the device is operated as a relaxation oscillator in a specified circuit. vp peak point ‘The voltage between the emitter and base 1 at the voltege peak point. w valley-point ‘The voltage between the emitter and base 1 at the voltage valley point. Veet NEGATIVE, curorr _ a SATURATION __ recion resistance of °“TeGiow ve eax row | 1 1 ' | pvauiey pone \ VEGI ise — Ww: ° DIAGRAM ILLUSTRATING CURRENT-VOLTAGE CHARACTERISTIC ee 128 TEXAS, INSTRUMENTSGLOSSARY FIELD-EFFECT TRANSISTORS Terms and Definitions Term channel ee a s In the sbove drawings of the insulated-gate devices, the substrate (bulk) is shown terminated lther internally or externally. The symbol at the right ilustrates an ‘unterminated (passive) substrate, PASSIVE SUBSTRATE TEXAS INSTRUMENTSGLOSSARY FIELD-EFFECT TRANSISTORS —_—_——— Lotter Symbols, Terms, and Definitions brs, bis, bos. bes Cas Cau Cis ‘Symbo! Term ‘common source smal: ignal (forward transfer, input, output, reverse transfer) susceptance drain source capacitance drain substrate ‘capacitance shorteireult input ‘capacitance, common: short-circuit output ‘capacitance, common source short-circuit reverse ‘transfer capacitance, ‘noise figure, average or spot ‘common-source small- signal (forward transfer, input, output, reverse ‘ransfer) conductance ‘small-signal insertion ower gain, (common- gate, common source) ‘small-signal transducer Power gain (common: gate, common source) drain current, de drain cutoff current Definition The imaginary part of the corresponding admittance, See Yfs: Vis: Yos: and Yrs. Symbols in the forms bx ‘and Ycx(imag) ore equivalent. ‘The capacitance between the drain and source terminals with the gate terminal connected to the ‘uard terminal of a three-terminel bridge. ‘The capacitance between the drain and substrate terminals with the gate and source terminals, ‘The capacitance between the input terminals (gate ‘and source) with the drain short-circuited to the source for alternating current. (Ref. 1EEE 256) ‘The capacitance between the output terminals (drain ‘and source) with the gate shortcircuited to the source for alternating current. (Ref. IEEE 255) ‘The capacitance between the drain and gate terminals with the source connected to the guard terminal of a ‘three-terminal bridge. See page 1:3, ‘The real part of the corresponding admittance. See Vis Vise Yos: 2nd rs. Symbols in the forms Gx and Yxx(real) are equivalent, The retio, usually expressed in dB, of the signal Power delivered 10 the load to the signal power delivered to the input. ‘The ratio, usually expressed in dB, of the signal ‘The direct current into the drain terminal ‘The direct current into the drain terminal of a depletion-type transistor with a. specified reverse ‘gate-source voltage applied to bias the device to the off state, —_—————$—$—— TEXAS, INSTRUMENTS 131432 GLOSSARY FIELD-EFFECT TRANSISTORS _—_ — — ‘Symbol 'oton) toss. Ig 'oF Ion less, \ossF tessa im(vte), Im(vis). Imtvos). lmlvrs) Is stort 'sos Term on-state drain current ‘oro-gate-voltage drain current gate current, de forward gate current reverse gate current reverse gate current, drain short-circuited 10 source forward gate current, drain short-circuited 10 soures reverse gate current, ‘drain short-circuited to source noise current, equivalent input source current, de source cutoff current zero-gate-vottage source current Definition The direct current into the drain terminal with specified forward gate-source voltage applied to bias the device to the on state. ‘The direct current into the drain terminal when the ‘gate-source voltage is zero, This isan on-state current in a dopletion-type device, an off-state current in an enhancement-type device. ‘The direct current into the gate terminal. The direct current into the gate terminal with » forward gate-source voltage applied. See VGSF- The direct current into the gate terminal with a reverse gate-source voltage applied. See VSR. ‘The direct current into the gate terminal of a junction-gate fieldettect transistor when the gate terminal is reverse-biased with respect to the source terminal and the drain terminal is short-circuited to the source terminal. The direct current into the gate terminal of an Ingulated gate field-effect transistor with a forward gatesource voltage applied and the drain terminal short-circuited to the source terminal. See V@sF. ‘The direct current into the gate terminal of an insulated-gate field-effect transistor with @ reverse gate-source voltage applied and the drain terminal short-circuited to the source terminal. See VGgR- See page 1.3, See preferred symbols bfs oF ¥fs(imog)- Dis OF Vis(imag): Dos oF Yos(imag)- brs oF Yestmag) ‘The direct current into the source terminal. ‘The direct current into the source terminal of a doplotion-type transistor with a specified gatedrain voltage applied to bias the device to the off state. ‘The direct current into the source terminal when the ‘gate-drain voltage is 2er0, This is on on-state current in a depletion-type device, an offstate current in an enhancement-type device. SSS TEXAS, INSTRUMENTSGLOSSARY FIELD-EFFECT TRANSISTORS ——————_— — Symbot NF of NF* *dsfon) "DS{on) Retyts). Retvid, Retvos). Reyes) Sg OF S21, st5Or 8215 fg 0F 8125. 515 0° 5125 Sig Or 811g, Sis or stig $09 9F $229. 805 9F $225 vw ta(ott) Term ‘noise figure, average oF spot small-signal drein- source on-state static drain-source onetate resistence thermal resistance forward transmission coafficient (common gate, common-source) reverse transmission coefficient {common-gate, common-source) input reflection coefficient (common -gate, common source) output reflection coetficient (common-gate, common-source) junction temperature turn-off delay time Definition ‘See page 1-3. ‘The smaltsignal resistance between the drain and source terminals with a specified gate-source voltage ‘@pplied to bias the device 10 the on state. For a ‘depletion-type device, this gate-source voltege may be 00, ‘The de resistance between the drain and source ‘terminsis with a specified gate-source voltage applied ‘to bias the device to the on state. For a depletion- ‘ype device, this gate source voltage may be zero. ‘See preferred symbols: ofs OF Visreal)- is OF Vis(rea), ‘0s °F Vorireal). ‘rs OF Yes(real) ‘See pages 1-2 and 1-3. The respective forward or reverse transmission ‘coetficient with the transistor in the indicated ‘configuration. See pages 1-3 and 1-4. ‘The respective input or output reflection coefficient ‘with the transistor in the indicated configuration. See age 1-4, ‘See page 1-4. ‘The time interval from a point 90 percent of the ‘maximum amplitude on the trailing edge of the input, pulse t0 » point 90 percent of the maximum ‘amplitude on the trailing edge of the output pulse, ‘This corresponds to storage time for a multijunetion transistor. See pages 1-6 and 16. NOTE: This definition assumes a device initially in the off state with an input pulse applied of proper polarity to switch the device to the on state “RT and WF abbreviations ae oftn used for mumbots F and F: however, the nmol F and F are praterre. TEXAS, INSTRUMENTS 133134 GLOSSARY FIELD-EFFECT TRANSISTORS TEER ‘Symbol talon) fo) ceo ‘VieRiGss, V(BRIGSSF ViBRIGSSR Yop. Vas. Vss. Vos Vos ‘Term ‘turn-on delay time fell time turn-off time tumon time pulse time rise time pulse average time ‘gate-source breakdown voltage forward gate-source breakdown voltage reverse gate-source ‘breakdown voltage supply vottage, de (drain, gote, source) drain-gate vottoge rain source voltage Definition ‘The time interval from a point 10 percent of the ‘maximum amplitude on the leading edge of the input pulse t0 a point 10 percent of the maximum amplitude on the leading edge of the output pulse This corresponds to delay time for a multijunction translator. See pages 1-5 and 16. NOTE: This definition assumes a device initially the off state with an input pulse applied of proper polarity to switch the device to the on state. See pages 1.5 and 1-6 The sum of tajott + tf. See pages 1-5 and 1-8. “The sum of tafon) + te See pages 15 and 16. See pages 1.5 and 1.8. See pages 15 and 16, See poge 1-6. “The breskdown voltage between the gat and source terminals with the drain terminal short-circuited to the source terminal NOTE: The. symbot V(gAyGss ® primarily used with junction-gate fiidetfect transistors. The symbols V(BR)GSSR OF VIBRIGSSF should be used with insulated gate transistors hovng shunting dioder (or similar voltge-fimiting devices. “The breskdown voltage between the gate and source terminals with a forward gate-source voltage applied ‘and the drain terminal short-circuited to the source terminal. See VGSF. ‘The breakdown voltage between the gate and source ‘terminals with @ reverse gate-source voltage applied and the drain terminal short-circuited to the source terminal. See VGSR. “The de supply voltage applied to @ circuit connected to the reference terminal. ‘The de voltage between the drain and gate terminals. The de voltage between the drain and source terminals, —_ Texas, | INSTRUMENTSGLOSSARY FIELD-EFFECT TRANSISTORS ——— Symbot Voston) Vou Vos Vesr Vesr Vasioft) Vosith) Vou Va Vsu vfs Yis Yor Term drain source on-state voltage drain substrate voltage gate-source voltage forward gate-source voltage reverse gate-source voltage ‘gate-source cutott voltage gate-source threshold voltage gate substrate voltage noise voltage, ‘equivalent input source-substrate voltage common-source small: signal short-circuit forward transfer ‘admittance ‘common-source small- signal short-circuit Input admittance common-source small- signal shortcireuit ‘output admittance Definition ‘The de voltoge between the drain and source ‘terminals with a specified forward gate-source voltage: ‘applied to bias the device to the on state. ‘The de voltage between the drain and substrate terminals, ‘The de voltage between the gate and source terminal. ‘The de voltage between the gate and source terminals. of such polarity that an increase in its magnitude ‘causes the channel resistance to decrease, ‘The de voltage between the gate and source terminals, ‘of such polarity that an increase in its magnitude ‘causes the channel resistance to increase. ‘The reverse gatesource voltage at which the magnitude of the drain current of a depletion-type field-effect transistor has been reduced to 2 specified low value, magnitude of the drain current of an enhancementtype fieldeffect transistor hes been increased to a specified low value. ‘The de voltage between the gate and substrate terminals. ‘See page 1-6. ‘The de voltage between the source and substrate ‘terminals. The ratio of rms drain current to rms gate-source voltage with the drain terminal ac short-circuited t0 the source terminal. ‘The ratio of rms gate current to rms gatesource voltage with the drain terminal ac short-circuited to the source terminsl, ‘The ratio of rms drain current to rms drain-source voltage with the gate terminal ac short-circuited to the source terminal, —_—_—_—_—_ TEXAS, INSTRUMENTS 135GLOSSARY FIELD-EFFECT TRANSISTORS ‘Symbol Term Definition ves common source smll- The ratio of rms gate current to rms drain-source signal short cirouit voltage with the gate terminal ac short-circuited to reverse transfor the souree tari ‘admittance Yfstimog)s commonsource small: “The imaginary part of the corresponding admittance. Yislimag)- signal (forward transfor, See YS Vis, Yos. and Yrs. Symbols in the forms Yostimag)- input, output, reverse Yestimea) transfer) susceptance Ytstreat) common-source small: “The real part of the corresponding admittance. See Yistreall- signal (forward transfer, Yfs: Vie: Yos, and Yrs. Symbols in the forms ¥xx{real) Yosireal- input, output, reverse and gy re equivalent. Yesreal). transfer) conductance SSS 138 TEXAS INSTRUMENTSSTANDARDS SEMICONDUCTOR STANDARDS DOCUMENTS Following are sources of standards material relating to low-power transistors and diodes: EIA and JEDEC Standards Electronic industries Association 2001 Eye St. N.W. Washington, D.C. 20008 “Telephone: 20250-7200 E Rogistered Outlines and Gauges for Semiconductor Devices—JEDEC Publication No. 12 Preferred Lead Configurations for Field-Etfect Transistors—JEDEC Publication No. 6A, JEDEC Recommendations for Letter Symbols, Abbreviations, Terms, and Definitions for Semiconductor Device Data Sheets and Specifications—JEDEC Publication No. 77 Recommended Practice for Measurement of Transistor Lead Temperature—JEDEC Publication No. 84 Quality Program Requirements for Solid-State Device Manufacturers—JEDEC Publication No. 85 ‘Standard Test Methods for Electronic Component Parts—E1A Standard RS-186-C ‘Test Methods for the Collector-Base Time Constant and the Resistive Part of the Common-Emitter Input Impedance-E1A Standard RS-284 Forward Transient Measurement on Semiconductor Diodes—EIA Standard RS-266 Measurement of SmallSignal HF, VHF, and UHF Power Gain of Transistors-E1A Standard RS:306 Voltage Regulator Diode Noise Voltage Messurement-E1A Standard RS-207 Messurement of Transistor Noise Figure at MF through VHF-—EIA Standard RS-311A Messurement of Reverse Recovery Time for Semiconductor Diodes-EIA Standard RS-318 Characterization of a Reverse Recovery Test Fixture—E1A Standard RS-318-1 ‘Thermal Equilibrium Conditions for Measurement of Diode Static Paremeters-EIA Standard RS-320 Numbering of Electrodes in Multiple Electrode Semiconductor Devices and Designation of Units in Multiple Unit ‘Semiconductor Devices—E1A Standard RS-321A ‘The Measurement of ICrel-E1A Standard RS-340 ‘The Measurement of Transistor Noise Figure at Frequencies up to 20kHz by Sinusoidal Method—EIA Standard RS-353 Measurement of Transistor Equivalent Noise Voltage and Equivalent Noise Current at Frequencies up to 20 kHz—EIA Standard RS-364 Designation System for Discrete Semiconductor Devices—EIA Standard RS-370 ‘The Measurement of Small‘Signal VHF-UHF Transistor Short-Circuit Forward Current Transfer Ratio—EIA Standard RS-371 ‘The Measurement of Small Signal VHF-UHF Transistor Admittance Parameters-EIA Standard RS-372 Method of Diode “CQ” Massurement—E1A Standard RS-381 ‘Measurement of Small Values of Transistor Capacitance-E1A Standard RS-208 Method of Direct Measurement of Diode Stored Cherge-JEDEC Suggested Standerd No. 1 ‘The Measurement of Small‘Signal Transistor Scattering Parameters-JEDEC Tentative Standard No. 10 ——— TEXAS, INSTRUMENTS 137138 STANDARDS ee International Electrotechnical Commission (IEC) Standards ‘American National Standards Institute, Ine. 1430 Broadway New York, N.Y. 10018 ‘Telephone: 212-8681220 Publication 147: Essential Ratings and Characteristics of Semiconductor Devices and General Principles of ‘Measuring Methods. Part 0 — General and Terminology Part 1 — Essential Ratings and Characteristics art 2 — General Principles of Measuring Methods Part 3 — Reference Methods of Measurement Publication 148: Letter Symbols for Semiconductor Devices and integrated Microcircuits Publication 191: Mechanics! Standardization of Semiconductor Devices (Military Standards ‘Commanding Officer U.S. Naval Publications and Forms Center 5801 Tabor Avenue Philadelphia, Pa. 19120 MIL-$-19500: Semiconductor Devices, General Specification for MIL‘STD-105: Sampling Procedures and Tables for Inspection by Attributes MIL-STD-202: Test Methods for Electronic and Electrical Component Parts MIL-STD-760: Test Methods for Semiconductor Devices, MIL-STD-883: Test Methods and Procedures for Microelectronics —_—— TEXAS, INSTRUMENTS,Transistor Selection GuidesTRANSISTOR SELECTION GUIDES “These guides are arrayed into families according to trensistor structure and applications. These families are: FAMILY GUIDE Page Low-Level Amplifiers tee cee 2 (ee 660001000 b0000Guc0GeG tes 22 High-Voltage Amplifiers os eee aaa High-Voltage Amplifiers 2. 2 Ae eee 23 High-Frequency Amplifiers... ee 24 High-Frequency Amplifiers 2... 2 ee O06 24 NPN General Purpose. ee ee eee aco PNP General Purpose fee 27 lGinchne eee eee Det 28 Switches 2 g560 eee 210 (Giioewern) eee ee eee ea an (ciioppers) eee ee an Matched Duals... 2. at ee 242 Matched Duals... eee : ners) (eT 6 adh abo ddondo0gdod5 0000 2. 29 Unmatched Duals a sees 248 243 214 SFET P-Channel Low-Frequency, Low-Noise Amplifiers... 2 ee 244 SFET N-Channel General Purpose Amplifiers... 248 SFET P-Channel General Purpose Amplifiers ee 245 SET High-Frequency Amplifiers... . 2... tee Fes 26 IGFET High-Frequency Amplifiers 2. ee eee ete SFET N-Channel Switches and Choppers 2... 2 ee BAT SET P-Channel Switches and Choppers. ee oe aro IGFET N-Channel Switches and Choppers oo 200 IGFET P-Channel Switches and Choppers... 2. De eee 2B JFET Duals eae te 218 (gar 5 bob 6ocgspcocgcocgcaceudcGooFcaea 218 Unijunction, Conventional... - + dagadoddga000 65 249 Unijunction, Programmable. ee 249 ‘The tabular entries within these femilies are not made on the usual manner of increasing type number, which would hhave litle inherent utility, but rather are ranked by the most-significant electrical characteristic of that family. Where there is more than one transistor type having the identical primary characteristic, the types within that group are further ranked by a secondary characteristic, and s0 on. “This form of organization works most efficiently when the user's selection criteria coincides with the organizational lay-out, but should not present undue difficulties i it does not. It should be noted thet the entries are nonexclusive; that isa transistor type may appear in more than one famil ‘specifications so dictats. ‘Grown junction transistors and certain other types not recommended for new design do not appear in these guides.TRANSISTOR SELECTION GUIDES ————— N-P-N LOW-LEVEL AMPLIFIERS ‘NOISE FIGURE bre Weericeo Fe pevice . ec MINMAX ue F worse sw Tyre package’ | cHIr MAX +See puge 220. Tae 30 wv Nase TO46 wie 10nA 30- s0v 2n2432 T0418 NB toma 30. asv 2N24328 To48 nig t0ua 40:20 av TB 115.7 eH) 2N@29 Toe Nn Tome 20120 cov Fab oT ere N24 Tose nT 10ua 100300 av FaB (16.7 eH) 2Ns30 To18 wu t0na 1100-800 cov Bape 1 kHe 2N2404 T0148 nit 10uA 120-360 4sv 2N2506 7018 nu TOnA "250-500 wv Teas @ TORE INSTT? Toe wT 10,0 400.800 cov 1548.0 10H 2Na104 T0186 Nu 100 ua 100300 sov Fa (18.7 kee) 2N5200 Tos2 Nat 100A 100-300 cov Fa 116.7 we ‘ASTS200 AAA. 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Tima 0 35V ‘N28, TO-46 tema 70 2ov 2N29454, Tos mA 20. tov N26 To46 mA 90530 ov Agraoe1 Tos2 Tima ‘90350 30 ‘2NA06T Toaz mk 90390 20v ABTA061 AAA 1m 100. tov 2N20008 7046 ma 12060 sov ABT4062 0.92 T mA 780-660 ‘20 ‘2Na062 Tos ma 180-860 sov AsTa0s2 AAA 2ma 50700 s0v AsTs227 AAA 2ma 50700 ov 25227 7092 Tama "30400 av ‘ABTa0s T0982 tama 20400 av ATAOAA t092 rama, 30400 av AsTaos AAA sama, 20400 a5v ASTAOAA AAA Texas INSTRUMENTSTRANSISTOR SELECTION GUIDES V———— NPN HIGH-VOLTAGE AMPLIFIERS. Vieniczo re DEVICE : MIN on saneanax, vPE acme can v40W Tima 3 RRS Tost Wa ov ma 0. ASTSS50 ARK Naz tov 30ma 30120 znaite 10.29 Nts 1sov 25mA 20. Tis101 AAA naz 160V Tima 3 2NSS5 T097 N27 1eov ma 80. ‘ASTSS61 Aan 27 tov 25mA 20 Tist00 AAA Nz 20v 30mA 20-160 ASTE050 AAA Nts 70¥ 30mA ‘30160 ‘2NSO58 To39 Nis 300¥ 30mA 5180 ASTsO5e AAA ns 300v 30ma 35.160 205058 yoso |_nis P-NP HIGH-VOLTAGE AMPLIFIERS Vieniceo FE Device MN ete na, TYPE aseatead oe wv Tm a Fs TOs au ov tma 4 AsT3496 ANA P17 sov ma 40 2N3496 018 py vzov ma «0 2N3405 70s Pay 120 Tima a0 ASTHOT AAR Pi 120v ma ‘0. 2Na497 10.18 P17 tov toma 40100 ‘ABTS400 AMA P22 tov toma 40-180 2Ns400 082 22 tov ‘Oma 50-180 ‘203694 7039 P22 ov 50mA 100.300 2na835 70.39 P22 180 10ma 60240 ASTsA01 AAR Pea 10V 10mA 60240 2Ns401 ros2 ez 15v ‘soma 50150, "2N3696 7039 Pa 175 Oma 100:300 23637 70.30 2 +See package drawings on page 2:20. —_———— Texas, INSTRUMENTS, 2324 TRANSISTOR SELECTION GUIDES _— — —— N-P-N HIGH-FREQUENCY AMPLIFIERS 7 ViBRICEO ‘CAPACITANCE DEVICE aos min MIN, PARAMETER MAX ‘TYPE 500 Miz 12V Cob, 1.3 pF TISeAA AAR ry 300 Mite sv cob 19F Tis106 AAR N20, 380 MHz 30 Cree 04 pF Tisea ry m7 360 Mz 30 Cree OApF mis108 AAA Ni7 500 MHz 12V Ceb 13 eF TIS62A AAA Naz 480 MH 30v Con OapF Tis128 AAA N28 aso Mite 18V Cob 1.3pF 26222 ros2 Nae 450 MHz 16v. 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P20 zv s0ma 0300 | to0MmHe 247 AMA P20 25v Soma 100. 180 Maz ‘ASTSE30A AMA r20 gov 2ma 0180_| 200mne AsTar25 AMA P16 ov ma ‘50150 | 200mHe "2NGI25 Tost PAB, 3ov soma 30180 | toomHs 23703 Tos P20 3ov soma 30160 | tomes sasr3703 rose P20 zov oma 20180_| roomm: 2Nse48 AAA P20 36v 160 mA 2048 | come: aNT2 To.18 P20 BV 180mA 204s | soMn: 2utat 1099 #20 av 150ma 000 | Gombe 2w122 T0418 20 35V 160mA 3090__| com: 2uit32 1090 P20 35V T50mA e200 | eon 2wz308 Tos 920 vov 10mA 0150 | 250mm 23260 T0418 Pz sov 10mA soso | 200mHz AST3005 AAA Ps wv 10mA co160__| zoo mez 203905 092 Pas “ov toma 100300 | SooMH N26 To-18 P23 ov toma 10000 | 250s ‘ABTa908 AAA m5 ‘ov toma 100900 | 250 MHz 2N3006 092 Ps sov somA 100900 rris01 092 20 4ov somA___100.300 T1803 AMA 20 See package drawings on pege 220. —— INSTRUMENTS CORPORATE Texas |TRANSISTOR SELECTION GUIDES P.N-P GENERAL PURPOSE (Continued) Tre 7 DEVICE y on MINMAX sin TPE PACKAGE: our Tema “40-120 | 200 ir 7NZB08 TOs P20 160ma 40-120 | 20min 2N2008 T0418 P20 180mA 40-120 | 200MHz 2NS48S To48 P20 160mA 50-160___| 150. 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Tos ust Sua @ 1040. 708 @ 1040, 2N6116 Toe vat SuA@ 10x0. Jona 1040. ase AAA vat LL TEXAS, INSTRUMENTSTRANSISTOR SELECTION GUIDES PACKAGE DRAWINGS Tos 0-18 1039 T0468 Tos2 JSHORT CAN VERSION| To-71 tor 1076 OF 10-78 Tosz T T0116 uv AAA 000 220 TEXAS, INSTRUMENTSTransistor InterchangeabilityTRANSISTOR INTERCHANGEABILITY ‘These lists of low-power (generally one watt or less of power dissipation in free-air) transistors are des design engineer in determining the recommended TI replacement when only the device type number is known. Also included is @ summary of the significant ratings and electrical characteristics of the referenced types. ‘These lists are extensive (approximately 4800 entries) but not definitive, An attempt was made to include all current and recently obsolete domestic types, both JEDEC registered and nonregistered. Undoubtedly there are some inadvertent ‘omissions, Purposely omitted are the European PROELECTRON types, Japanese 25 types, and “hobbyist” types. Careful engineering judgement has been used to provide the recommended TI replacement based on the specifications alone; final application might dictate another choice. Equally careful judgement should be used in selecting a replacement except where the recommended replacement type number coincides with the referenced type. In most cates, the recommended replacement has the same general package as the referenced type; that is, plastic for plastic ‘and metal for metal. For plastie-encapsulated devices, the “recommended” replacement has the same or similar terminal assignments as the referenced type although this terminal assignment may not be truly preferred. The user may consider this ORGANIZATION ‘Those interchangeability lists are divided into six broad classes as follows: Master List of Resistered Types... ss oe . 34 Master List of Nonregistered Types. bees Sees 363 Registered Field-Effect Transistors... ss beeen ee - 392 Nonrogistored Field-Eftect Transistors. bees cee 3104 acisred Unilunezion crengeores een cere epee nies 3116 Nonragistred Unijunction Transistors ee 3417 ‘The Field-Effect Transistor and Unijunction Transistor lists are subsets of the appropriate Master List, ‘oF nonregistered. her registored Every effort has been made to ensure the accuracy of each entry. However, TI makes no warranty as to the information furnished and the user assumes all risk in the use thereof. KEY TO MANUFACTURER CODES (CR — Crystalionics Division, Teledyne Incorporated M_ — Motorola Semiconductor Products F — Fairchild Semiconductor Corporation NA National Semiconductor Corporation GE — General Electric Company RC — RCA Corporation GI ~ General instrument Corporation SI ~ Siliconix, Incorporated IN — Intersil, Incorporated TI ~ Texas Instruments IncorporatedTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES — aa EATS TECAL GuaactmaTs 5 = nl Ne emaconer oe Yeu | @ | Ceres — |ig=25°¢ Yes Vero ay souvainer sre=a8%e Tan WX @ te [MAK @ | MN | ma fw yw smarlevy tmnt] | latz fume Jor | annv7 020 jatar or | annie 10 30 jawriga own Jor | arrnea 104s tie few for | annie 130 90 fawi20—|rwm for | anz0 150s 70393 feo frame for | anaai7 150 fo oP fanteoa, Ine Jor | ana2i7 13040 99 E tet Inn foe | anaar7 1 ® 999 i" 4 1 — esta ren [or | ananir 0 1939) lantea nen foe | anaaie 0 1999 fawteza fm or | arate ay 9.99 antes few for | anazie wo 40 a9 fawtesa rm [or | anaaie 00 999 fawas” rm Jor | anaaa 7% © zea Ine Jo | anzue 7 ase lene Jor | axav08 2 3% 1s ease ene ae | axavos 20300 | mason [or | anavos 2010 mason one lor | anaes 20 50 net le Jor | axaros [7 perry Ime Jor | anasoe 0 10 ‘aezsza owe or | anaes 2% 30 aes ew [or | avane wo 4s mo] asta to sto] ae ase wen for | anazir wo 4s | moss to fis to] jazz ewe [or | anavoa 3090 fanaa |mnw for | anavos ms | na a}a os fmuazme enw Jor | anavoe ms 0 | pa a} 3 5} a naz Jrme_|ar | 2nas04 oS rasta [me [or | axavox us| oe af ao fname fone ce | anavoe ms 0a | teas a[ 3 wl a naz? me lar | anasoa 30 rsara [rer ar_| avaroe ms | ate 2 15 fanaa irre [or | anavon ms sone apa st | fnao me ar | anos as aon wor | znav06 ms jasase |e for | anaz wos |_| fawasza fm [or | anaaaa 30s . Ss assume foe | amas 10s assaf for | anaa34 moss 1 os nae new for | anaoa 148 —_—$ Texas, INSTRUMENTSTRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES ————— AAU RATIO SERIE, CURACTERTICS 3 * Me re reacneet oe Vou | @ | nina Trmaust — |ranasre Youo Vero ite Fouvaleer ete=aste Tan WOK ete |MAX @ te] MIN | mun mw vy) oayfivy oma] |e massa ren Jor | anazaa ms 1 os faassen lor | anasua ar ar) 1 3/0 faa New far | avass io fmaasa few for | 2na354 mo sas 1s faassen [or | axaasa = 0 «© + 3| # fase | for | anaae wo 4s fauasea fen [or | 2naaea mw ros fmesr ew [or | 2naa7 is 45 | mss to faeaara [ew [or | ansa7 mw ms 10 v9] fee urn or | 2naa8 as 4] asi 10 fawsata wen. 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