*ALL INDIA 1" RANK 17 TIMES IN GATE* *ALL INDIA 2™ RANK 10°TIMES IN GATE* Cla KS ZN fers excatant coaching fr: GATE, IES, JTO, APGENCO, APTRANSCO, APPSC, CPWD ot For farther deta contact _ACE EDUCATIONAL ACADEMY 20,24, Rake Pl, Fn, 20 ABB re Malar Schont New Gate) Fea opal ne Myc —S00 016 ‘Ams IDERDADS 00001 Peta esas = 4208, 275007 ww aceenagacademy.com ema ace gatequrugigna.com SYLLABUS lectronie Devices: Enersy bands in sion, inne ad extrinsic ‘con, Cor transport In sicon: atusion curent, dif crret, ‘motility, and ess. Generation and recombination of carers. pn Juneben diode, Zener dode, tunnel ode, BIT, FET, HOS copactor, MOSFET, LED, psn ond avalanche photo diode, Basis of LASERs Device eenology: integrated crcults Fabrication process, odin, uso, fon imparaton, pheolthegraghy, o-tib, ptub and twit (0S processELECTRONIC DEVICES CONTENTS SNo. Chapter Page No. 1, | Semi Conductor Theory o1-a 02. |p-N Junction Theory and Characteristics 32-56 03, | Transistor Theory (BUT,FET) 57-90 (04, | Basics of C Bipolar, MOS and CMOS Types | 91-106 05, | Basics of Opto Electronics 105-114 06,. | Se Assessment Questions 11-126, Pr “GATE, DRDO, PSUs & IES Managing Director Y.V. Gopala Krishna Murthy hi CHAPTER =1 ‘SEMICONDUCTOR fHOERY (Glzctrons and hoes in sonicmitrs, cassis. _mechanis of cent flow in sic, al effet) + Prey sone tance at, 1+ Alonso ite chee inl clcons, hich we cole ea 1+ Aveaofere cence pstvely rgd eles. 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The eos RE MOSFET ty be ‘peed ah pen detest ale 5, Comping FET MOSFET cs ee (6 MOSFET i wey suceple oon vine sed acd pc! haing ing Inline anaged ci is 0 ope tn 1. MOSEET tas ao oft oie. A seme eve bu din cm ‘atcange Tce pops vey nang Sal iene 8 Spi int ns wi chin re pon itn ey halogen as thm mow nae prac le MOSEET we wy dnl VES cc thn FET ease of al Sheer ‘COMPARISON OF N-WITI CHANEL MOSFES 1. The Pune enancemet MOSTET is very pop ae i mh esr ad ayer prc tbe hn vo: 2 Tete may inet 25 tes ower ttn mii. Tha» Phare ‘Mosh aap acs na channel MOSFET hn eying 4. Ted sine of Panel MOSFET then higher nha fr nee che! MOSFET ‘Toe shanel MOSFET haste ih hing es which abs ister in svching eto ee alec en ner nee cca. 5: TheN shame! MOSFET mallet sane compet Pel evi. 6, Duet he psy hp ciouminits, he Neda MOSFET may tm ON (meaty wea he Paha evi wil abe ae16 teronie Devices ACE Academy ‘COMPARISON OF N-WITH F-CHANNEL FETS |.lgae Noel JPET he et cae ton, whe be eet oe Solr ins Phe! FEL 2. 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