See fee NNO e CU SILICIU : ae. See y ANSON SAKE) : eas “4989LP.R.S.-BANEASA TRANZISTOARE CU SILICIU SILICON TRANSISTORS 1989Acest catalog a fost elaborat in cadrul Intreprinderii de Piese Radio si Semiconductori Baneasa de: ing. T. DUNCA ing. D, RAIU — coordonator ing. D. SDRULLA Au colaborat: C. BARGAUNAS ing. G. CALINESCU fiz. M. CIOBANU ing. D. CRACEA E. DUMITRU M. IVAN T. NEDELCU ing. V. ULIERU Informatiile din acest CATALOG au fost verificate cu atentie si se pot con- sidera reale si utile. Cu toate acestea, nu se asuma nici o responsabilitate pentru eventualele omi- siuni sau inadvertente. In acelasi timp, LP.R.S. — Baneasa nu raspunde de interpretarea gresiti a in- formatiilor continute in acest CATALOG. Specificatiile componentelor _electronice produse de ILP.RS, sint supuse modificd- rilor. De asemenea, producatorul are posibilita~ tea, la cererea beneficiarilor, si livreze componentele sale masurate si in alte conditii electrice sau mecano-climatice. ‘The informations of this DATA BOOK has been carefully checked and is beli- ved to be true and reliable. However,’ no responsability is assumed for possible omissions or inaccuracies. In the same time, LP.R.S. — Baneasa has no responsability in case of, wrons interpretation of informations contained in this DATA BOOK. Speciffications of electronic components manufactured by IPRS, are subject to chanse, Also, the manufacturer has _ possibility, at custom demand, to deliver his com- ponents tested at any other electrical and mechanical conditions. UZ INTERN INTREPRINDEREA POLIGRAFICA CLUJ, Municipiul Cluj-Napoca, ed. nr. 442/1987 BlTRANZISTOARE CU EFECT DE CIMP.. 13 FIELD-EFFECT TRANSISTORS BF&5....... 15 BF2M7....... «18 BF 256....... 21 2N 5020" 2.2... Oh 2N 5021" 2... ee 24 TRANZISTOARE DE MICA PUTERE ... 27 LOW POWER TRANSISTORS BC 107... 6.4% 29 BOMB... .... 29 BCI9.. 2... 29 BC17....... 33 BOIL... eee 35 BOI... ee 35 BCI... ....4 35 BCI... . 2. 35 BC177....... 39 BCI7#8 2... : 39 BCI... 2... 39 BC19 2... 2.24 29 BC 250....... 44 BCQ1..-.... 47 BC 252....... 47 BC253.....-.. 47 BC25......-. 47 BC261....... 50 BC 262 .....-4 50 BC 23 ....... 50 BC266....... 50 BC327.....-.- 56 BC 328 ....... 55 *DATE PRELIMINARE. BCY 5B. 2... BCY 59. ...... BOY 9. .....4 BOY Bo... 2. BOY 79......4 BF 257 BP 257E BY2se.. 2. ee BE 259 BE BE BF BY Br BF 4224 BF 423A BF 457 BF 457E BF 458 BF 47... 2.0% BFA7L 2... 2 ee 58 61 61 65 65 69 72 73 75 75 7 75 79 79 79 79 79 83 83 88 92 92 97 97 97 97 101 101 101 104 107 104 107 110 110 110 110 113 116 113 CUPRINS BLE OF CONTENTS BRA... 2... 116 2N 929 ....... 19 ON 980 22. ee 11g TRANZISTOARE DE INALTA FRECVENTA 123 HIGH FREQUENCY ‘TRANSISTORS BFIIS....... 125, BF 167 ....... 129 BFI23....... 133 BF 1735. .....4.- 138 BF 180. ...... 142 BF ISL... 6... 142, BF 18 2... ee A? BRIG... 2... 147 BY igs... 2... 151 BPI99. 2.2... 154 BF200....... 157 BP 24 ....... 162 B25. .....- 162 BF2AO... 6... 166 BPM... 2... 166 BF 2%S54......5 169 BF 255 ....... 169 BF 272A ...... 172 BF3IGA ...... 177 BF 450. ...... 181 BRAS... 1... 181 BF 479%... 1. 184 BF 506... 2... . 187 BF50O9....... 191 BROW... 2... 194 BFW 9H 2... 197 BPX 89. ...... 199 BEY 90....... 202 _PRELIMINARY DATACUPRINS TABLE OF CONTENTS ON9B .. ee ON 4957 ee ON 4958 2... 2N 4959. 2 2. 2N 5109 2.1... 2N 51094. ..... QN 51098. ..... 2N 5829... we TRANZISTOARE DE COMUTATIE SWITCHING TRANSISTORS BSW 22 ...... BSW 22A...... BSX 12. ...... BSX 1A...... BSX 128 ...... BSX21....... BSX45...0.... BSX BSX BSX BSX BSX BSX BSX BSX 205 208 208, 208 2 2u 2 208 217 217 217 222, 226 230 234 238 238 241 241 244 244 244 248 252 252 252 257 257 257 261 261 261 265 2N 2N 2N 2N aN 2Nn aN 2N aN 2N oN 2N 2N 2N 2N 2907A... . . TRANZISTOARE MARE PUTERE - HIGH POWER TRANSISTORS BD BD BD BD BD BD BD LEE S gy -awzasa 272 277 272 277 282 286 290 286 290 296 300 304 300 304 311 315 319 323 327 327 331 335 331 335 344 344 349 BD I81....... 360 360 360 363 367 363 367 BD237....... 363 BD 238. ...... 367 371 375 pee BML BD 436. ...... 375 BD 437... 2... 379 BD 438... . 383 BD 4399....... 379 BD 440... 22. + 383 BD441....... 379 BD 442....... 383 BD 63... 387 BD 6M... 2... 391 BD 645... . 387 BD 66... 2... 391 BD 47....... 387 BD OB... . 1. 391 BD G9... 2... 387 BD650......, 391 BD67....... 398 BD 675A... ... 395 BD 67%....... 399 BD 670A ...... 399 BD 677 . 395 BD6W7A...... 395 BD6B....... 399 BD 6A... 2. 399 BD 679... 0... 395 BD 679A 2... 395 BD 680....... 399 BD 680A ...... 399 BD 681. ..... + 395 BD GSA... .. + 395BD 682. ...... BD 682A... BDY 29. ....4- BDY 87.......- BDY 71......% BU 204.....- . BU BU BU BU BU BU BU BU BU BU 428 BU 428 BU 428 BU 3264/7 ..... 428 BU 326A/8 2... £8 BU 526....... 431 BU 526/4 - - 2... 431 BU 5265... ... 431 BU 5266 ...... 431 BU 5267... 2. 431 BU 5268... 431 BU 606... 2... 435 BU 606D . . 439 BU 607....... 435 BU 6O7D ...... 439 BUG... 6... 435 BU 6D ...... 439 BU 806+ 2.2... 443 BU 8077 1.1... 443 BU 930. ...... 446 BU SBI... ee 446 BU 932 446 BUR 606... 1... 449 BUR 606D ....- 453 BUR 607 ......- 449 BUR 67D ..-.. 453 * DATE PRELIMINARE BUR 608 ...... 449 BUR 608D ..... 453 BUR 806...... 487 BUR 807 ...... 487 Bust ...... 460 BUS IA* «4... 460 BUS BY... .. 460 BUS IM* . 6... 463 BUS 1I6* «2... 463 BUS 127... 00, 466 BUS 124"... 466 BUS 12B* 466 BUS 124* 2... 469 BUS 12/6" 1.2... 469 BUS 13 2.0... 472, BUS 13A* 2... 472 BUS 134" 7.2... ATS BUS 13/5" . 2... 475 BUS 13/6 ..... 475 BUS 13/77" 2... 475 BUS I4# 2... .. 478 BUS 144"... 478 BUS 44" 2... 481 BUS 14/5" «2... 481 BUS 14/6" 2 2... 481 BUS 14/7* ..... 481 BUT 1* 2... 2. 484 BUT MAY . 2... 484 BUT 11/58 «2... 487 BUT 11/6* 2... 487 BUT 17* 2... 487 BUW 22%... 2... 490 BUW 23"... 2... 493 BUW AM... 496 BuUW 2*...... 499 BUW 25/5 . 2... 499 BUW 2%. 0... 502 BUX 0A ..... 505 BUX IA... 2. 508 BUX WA.....- 5 CUPRINS BLE OF CONTENTS BUX 404 BUX 414 BUX 42A...... BUX 80 BUX 80/4 BUX 805 ..... BUX 80/6 BUX 80/7 BUX 81 BUX 81/9 BUX 82 BUX 82/4 BUX 82/5 Bit 517 520 BUX 84/6* BUX 85* BUX 86* BUX 86/4" 2... BUX 86/5" BUX 86/6* BUX 86/7* BUX 87.2... BUX 87/9* GT cT CT cr ct cr cT ct ct cr cT 150/4" 150/58. ee PRELIMINARY DATA 556CUPRINS, TABLE OF CONTENTS 556 SDM 5010* ..... 534 TD 264/12... 605 556 SDM SOLI* ..... 58 TD2S5...... + 608 556 SDMS50I28 ..... Sa TD265A...... 608 556 SDM 5013* .... 584 TD 265B .... 608 556 SDM 5014 ..... 587 TD265C ...... 608 559 SDM 5015* .. . . 587 TD 25/1... 608 559 SDM 5016+... .. 587 TD 366....... 612 559 «SDM 50I7# .. .. 587 TD 366A ...... Giz 559 SDT 9201...... 590 TD 366B ...... 612 559 SDT 9202...... 590 TD36C ...... 612 589 SDT 92038... 2. 590 TD 367....... 615 559 SDT 9204...... 590 TD 367A... 61s 559 SDT 9205...... 590 TD367B...... 615 562 SDT 9206...... 599 TD3EC ...... 615 562 SDT 9207...... 590 TD63....... 618 562 SDT 9208...... 590 TD G4... 2... 621 562 SDT9209...... 590 TD&S....... 61s 562 SDT 9210...... 590 TDG6....... 621 562 SDT 9301...... 54 TD GT... 2... 68 562 SDT 9302...... 594 TDG... eat 562 SDT 9303...... sof TD6I9.. 6... 618 SDM 4001.00.05 566 SDT 9304...... 594 TD650....... 621 SDM 4002...... 566 SDT 9305...... 594 2N 1487... ... 624 SDM 4003.62... 566 SDT 9306...... 594 2N 1488 2... .. 624 SDM 4004....... 569 SDT 9307...... sof ON 1489 2... 624 SDM 4005.0 06. 569 SDT 9308...... 594 ON 1490 «1... 624 SDM 4006.2... 569 SDT 9309..... 594 2N 3054.1... 627 SbM 4010.00.00. 572 TD 597 2N 3055... ... 630 SDM 4011... ee 572 TD 597 QN 3085H.. 630 SDM 4012...... 572 TD 597 QN3055W...... 630 SDM 401I3...... 572 TD 597 2N 3055/1... ... 633 SDM 4014.0... . 575 «TD 597 ON 3055/2... 2. . 633 SDM 4015...... 575 TD 601 2N 3055/3... . . 633 SDM 4016...... 575 TDIGA...... 601 2N 3055/4. ..... 633 SDM 4017...... 575 TD163B..... 601 en 3055/5 633 cpr Rapa St aw ane ws 3 5 vee es 57 TD IG... 2. SDM 5003" 2... 578 «TD 264....... 605 2N 9055/7... - 633 SDM 500 . 2... 581 TD 264A .,..... 605 2N 3055/8... ~~ 633 SDM 5005" ..... S581 TD264B ...... 605 2N 3055/9... .. + 633 SDM 5006" ..... 581 TD24C ......' 605 2N 3055/10 ..... 693 *DATE PRELIMINARE____ 6 __ PRELIMINARY DATAON 3442. ee 637 ON 34420 we ee 640 QN 3771 2. ee ee 644 2N 37720... wee 644 2N 3773. we ee 647 QN 4347 2. 2 2 we 640 QN448 2... .. 647 2N 5294 2. 1 ee 650 2N 5296 ...... 650 2N 52088 . 2... 650 2N 5490... 2. 653 2N 5492. 7. wee 653 ON 5494 2 we ee 653 QN 5496 2 2 we 653 2N 5575 2. 2 wee 656 QN 5576" 2. 1 we 656 2N 5577" . 2. e 656 2N 5578* . 2... . (656 2N 5579" 2 2 2 ee 656 Qn 5580" 2. 2... &6 2N 5871 «1... 660 Qn 5871/1. ..--.- 660 2QN 5871/2... 22. 660 QN 5872 2. 2 Lee 663 2N 5872A . 2... 663 QN 5872B... 2... 663 QN 5873. wee ee 666 2N 5873/1... 2... 666 ON 5873/2... we 666 2N 5874 7 2 ee 669 2N S874A 0... ee 669 QN 5874B 2. 1 ww 669 QN 6253... - 672 2N 6254... we 675 2N 6257, «7 ee ee 678 2N 6258 ...-.- 681 2N 6259... 2 ee 684 2N 6260 .....-- 687 2N 6261... 2. 690 2N 6262 .....-- 693 *DATE PRE 2N 2N 2N 2N 2N 2N 2N 2N Beee 2N an 2N 2N 2N 2N 2N 2N 2N 2N aN aN CUPRINS TABLE OF CONTENTS 6263.2... 696 6264... ee 699 C274 we ee 702 6275 2. ee ee 702 6276... ee 702 6277... we 702 671 .....- 708 6653 ...... 709 663A... 2... 709 6653B.. 2... 709 Cc 72 6653/2... n2 6653/3... 1. nz 6653/4... n2 6654 2.0... 715 664A... ns 664B.. 2... ns 6654/1... 78 6654/2... .004 718 6654/3... 718 6654/4... 718 6655 2... 6. 721 6655A.. 2... 72 6655B...... 721 on 724 6655/2... 724 6655/3... 724 6655/4... 2. 724 FOTO-TNANZISTOARE 727 PHOTO-TRANSISTORS FT FT Fr FT Fr FT FT WI... ee 729 301%, ee 733 302%... 2... 733 308%... ee 733 B04 733 Blt. ee ee 736 BI... eee 736 UNIJONCTIUNE . 739 UNISUNCTION TRANSISTORS vat TAL © NOVA ABORDARE A PROBLEMEL CALITATIN 2N 3439° . 2N 3440* . 2N §415* , 2N 5416* 2N 5835* . 2N 5836" . 2N 5837* . 2N 6338 A* 2N 6339 A* . 2N 6340 A 2N 6341 A¥ N 6436 A* 2N 6437 A* 2N 6438 A* CAPSULE . CASES PRELIME tae 76L tee F6LINDEX ALFANUMERIC ALPHANUMERICAL INDEX ne re ne ne ne NC 5 BE BC Be ne RC Be ne ue ne 29 29 29 33 35 35 35 35 39 39 39 29 44 47 47 47 47 50 50 50 50 55 53 58 58 6L 61 65 65 69 R 5 75 75 73 vid 79 79 79 79 79 BD 440 BD 441 BF 258 . 395 395 399 399 403 406 409 125 129 133 138 142, 142. 147 147 151 154 187 162 162 166 166 15 18 169 169 21 97 97 97 97INDEX ALFANUMERIC ALPHANUMERICAL INDEX BF27......- 101 101 BF299....... 101 BF 316A... ... 177 BF 420A ..... 5 104 BFAQIA ...... 107 BF 422A... 2... 104 BF 493A ...... 107 BF 450....... 181 BR451....... 181 BF 457... 2. 110 BF4S7E ...... 110 BR458......- 110 BF 459.2... 00. 110 BF 4699... 7. 3 BF470....... 116 BRAWL... 2.2... 113 BR472....... 116 BF 479%. 2.2... 184 BFS506....... 187 BFS509....... 191 BF9I4....... 194 BFW O* 2... 197 BFX 89... 0... 199 BFY90....... 202 217 217 217 222, 226 230 234 238 238 241 241 244 244 2A4 BSX21.......- 248 * DATE PRELIMINARE BU 326A/4 BU 3264/5... BU 3264/6... .. BU 3264/7... . BU 3264/8 BU 5%....... BU 526/4 BU 526/5 BU 5266 .. 2... BU 526/7 252 BUR 66 ....., 449 252 BUR GOD ..... 453 252 BURGOT...... WY 257 BUR GOD ..... 352 257° BUR 608 ..... . 4d 257° BUR 608) .....- 453 261 BUR S06 ...... 457 261 BURS807...... 457 261 BUS II* ...... 460 412 BUS IIA... ... 460 412 BUS IIB*...... 460 416 BUS 114%... ... 463 412 BUS IJ6*.. 2... 463 418 BUS I2* 2... 2. 466 418 BUS 124%... ... 466 422 BUS 12B*..... 466 422 BUS 12/4"... . . 469 418 BUS 12/6... ... 469 425 BUS I3* ...... 472 428 BUS I3A*.... 472 428 «BUS 13/4*. 2... 475 428 BUS 13/8"... . 475 428 BUS 13/6*.. 2... 475 428 BUS 13/7*..... . 475 431 BUS 4" ...... 478 431 BUS MAT... ... 478 431 BUS 14/4*. - 2... 481 431 BUS 14/5*. 22... 481 431 BUS 14/6"... 1. 481 431 BUS 14/7*#. 2 2 481 435 suri oo... 434 439 pur iat 484 435 439 «BUT Wjs*. eee 487 435 BUT 11j6*.....- 487 439 BUT IT. 2. 487 MS puw 2 490 MB tye BUW 2 0... 493 446 BUW 24 2 2... 496 ag BUW 25* 2... 499 PRELIMANARY CATA‘DEX ALFANUMERIC ALPHANUMERICAL INDEX 499 GT 1504"... . . 556 SDM40I1....., 572 502 GT 150/5*. 2... $56 SDM 40I2...... 572 505 GT 1150/6... 2. 586 SDM 4013...... 572 508 GT 150/7*. . 2... 556 SDM 4014...... 575 Sil GT 150/8*...... 556 SDBM401I5...... 575 S14 GT 1509"... . 836 SDM 4016. ..... 575 517 GT 150/10" ..... 586 SDM 401I7...... 575 520 GT 2503 ...... 569 SDM 5001¢ ..... 578 523° GT 250/4...... 559 SDM 5002 oa . 578 526 GT 2505... 559 SDM 5003 ..... 578 526 GT 2506 ...... 559 SDM 500" ..... 581 526 GT 2507 ...... 559 SDM 5005"... . . 581 526 GT 2508 ...... 559 SDM 5006" ..... 581 529° GT 2509 ..... 569 SDM 50100 ..... 584 529 GT 250/10 ..... 589 SDM S5OIIY..... 584 532 GT 4003 ...... 562 SDM 50128 ..... 584 535 GT 4004... 562 SDM 50139* ..... 584 535 GT 4005... . . 562 SDM S017 2... 587 535 GT 4006... . + 562 SDM50I5* ..... 587 535 GT 4007... 562 SDM SOI6* ..... 587 538 GT 4008... 6. 562 SDMS0I77 ..... 587 538 GT 4009... . 562 SDT 9201..... + 590 BUX 8... 541 GT 400/10 2... 562 SDT 9202...... 590 BUK M46" 2... S41 FT NIP. 2 729 SDT 9203...... 590 BUX 85* . 2... S54 FTQL. 2.1... 761 SDT 9204... .. a) BUX 86.0.0... 544 FT 202....... 761 SDT9205...... 590 BUX 86/f* 547 PT SOI... .... 733 SDT 926...... 590 BUX 86/5* 2... 547, «FT 902"... 733 «SDT 9207...... 590 BUX 86/6" 1... 547, «FT 308"... 733 SDT 9208...... 590 BUX 867* 22... S47 PT 304". 2 733 SDT 9209...... 590 BUX 87 6.0... 550 FTSII*....... 736 SDT9U0...... 590 BUX 879% . 2... 550 FTSI2.. 2.2... 736 SDT 9301... 594 GT 100/3*. 2... 553° FT 313*. 2... 736 SDT 9302... a. 594 GT 1009/4"... . FT 3I4*. 2. 736 SDT 9303...... 594 GT 100/5*. 2... SDM 4001... 2... 566 SDT 9304...... 594 GT 10/6"... . SDM 4002...... 566 SDT 9305... ... 594 GT 10977"... 2. SDM 4003...... 566 SDT 9306. ..... 594 GT 1009/8". . : SDM 4004... ... 569 SDT 9307... ... 594 GT 100/9*. 22... SDM 4005...... 569 SDT 9308. ..... 504 GT 100/10" 2... SDM 4006. ..... 569 SDT 9309...... 594 GT 150/8*. . . . 556 SDM 4010...... 872 TD 162....... 897 *DATE PRELIMINARE _ 10 _.. PRELIMINARY DATA(EAL PRs. INDEX ALFANUMERIC ALPHANUMERICAL} INDEX (O BANEASA TD 162A ...... 597 TD 162B ..,.... 597 TD 1620 2... 2... 597 TD 162/12... we 597 TD163......-. 601 TD 163A ...... 601 TD 163B ......- 601 TD 163C ... 2. 601 TD 163/1 . . . 601 TD 264. . 605 TD 264A... 2... 605 TD 264B .. 2.08 605 TD 26440... 2 we 605 TD 64/1... ~ 605 TD265.....2.. 608 TD 265A ...... 608 TD 265B ee 608 TD 265C . . 608 TD 2651... 6. 608 T™36....... 6f2 TD 366A ...... 612 TD 366B 1... 1... 612 TD 3660 .. 2... 612 TD 367 ....... 615 TD 367A... 2... 615 TD 367B ...... 615 TD 3670... 2... 615 TD 643... 2 2 we 618 TD 644..,.~... 621 TD6S 2... ee 618 TD 646... . 2... 621 TD 647... 2. ee 61s TD 648. ..... . 621 TD 649... 2... 618 TD650......-. 621 2N 706 ....... 265 2N 708 .......- 268 ON 9IB 2... 205 aNg29 ......- go 2N M87 2 ww we ~ 624 *DATE PRELIMINARE 272 277 272 277 282 286 290 290 296 300 304 311 315 319 323 71 741 327 327 331 335 331 335, 339 344 339 344 627 630 €30 630 633 633 633 2N 3055/5... 2N 3055/6... 2N 3055/7... ... 2N 3055/8... 2N 3055/9. 2 2... 2N 3055/10 2... 2N 3439 2... 2N 2N 2N 2N 2N aN aN 2N 2N 2N 2N 2N 2N 2N . 2N 5836 2... 774 PRELIMINARY DATA x HDEX ALFANUMERIC L PIR: Ss. Mey ) INDEX BANBASA 4°) ALPHANUMERIC. vee 776 se es 690 ON O6SBL. LL. 72 tee 660 see es 698 IN 6653/2.....~. «712 fee 660 2N 6263 ...... 696 2N6653/3...... 712 sees 660 ON Ot 2... 699 2N 6653/4... .. 712 see 663 9N 6274 2... 702 ONL 7... TIS, bee 663 9N 6275... 2. . 702 QNOHA.L 71S bee 663 2N 6276.11... 702 QNGGHB.. 1... 715 see G66 2NG277.. 2... 702 2N GGL... 2... 718 bee 666 2N 6338A* ..... 779 2N G654/2...... 718 see 666 2N6339A* ..... 779 2N 6654/3. ..... 718 sees. 669 ON G30AS 22... 779 QN 6654/4... 2. 718 sea 669 2NGSIA® ©... . 779 2NG6GS ...... 721 see es 669 ONG 2.2... 706 2N 665A... ... 721 eee 672 2N G436A® . . .. . 782 ON O655B. 2... 721 re en an en tee ~ QN 6655/1... * 724 tee 681 2N 6653... 709 AN 6655/2... 724 see (84 QNG6653A... 2. . : 709 -2N 6655/3... 72K see 687 2NG653B...... 709 2N 6655/4. ..... 724 * DATE PRELIMINARE PRELIMINARY DATA 12TRANZISTOARE CU EFECT DE CIMP FIELD — EFFECT TRANSISTORSBANEASA TRANZISTOARE, CU Stier, CU EFECT DE CIMP, CU JONETIUNS, CANAL BF 245 TO92 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS Voce Tensiune drena-poarta 30 Vv Drain-gate voltage Vos Tensiune drena-sursa +30 Vv Drain-source voltage Ves; Tensiune poarta-sursd —30 v Gate-source voltage Ic Curent de poarta 10 mA Gate current Prot Putere totald disipata (Ty < 25°C) 200 mW Total power dissipation Ty Temperatura maxima a joncfiunii 125 °C Maximum junction temperature Ts Domeuiul temperaturilor de stocare | —55++150 °C Storage temperature rangeBF 245 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Ru ya Rezistenta termica joncfiune-ambiant | max. 500 °C] Ww Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru a . Parameter Min. Typ. Max.) Unit. . =a — Verjss Tensiune de strapungere poarta-sursa Gate-source breakdown voltage —Ie =1 pA; Vos = 0 30 Vv — Toss Curent rezidual poart’-sursé " Gate-source cut-off current —Ves= 15 V; Vos = 0 5 nA Ipss Curent de dreni de saturare Drain saturation current Q) Vps= 15 V; —Ves=0 BF 245 2 25 | mA BF 245 A 2 6,5 | mA BF245B |6 15 | mA BF 245C [12 25 | mA = — Ves ot Tensiune de blocare poarta-surs4 Gate-source cut-off voltage Vos = 15 V; In = 200 pA BF 245 0,5 8 Vv | BF 245 A 0,5 22)V BF 245 B 1,6 3,8 )V | BF 245 C 3,2 75 | V [Vee] Transconductanfa direct& Forward transconductance Vos= 15 V; —Ves=0; f=1 kHz | 30 | mS iva) --Frecventa de taiere | Cut-off frequency (2) Vos= 15 V; —Vos=0; i 700 MHz 6BF 245 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.} Parametru Min. Typ. Max| Cuit. | 1 Ces Capacitate de reactie i Reverse transfer capacitance | Vps= 20 V; —Ves= 1 V; f=1 MHz 41 pF Ca Capacitate de intrare Input capacitance Vps = 20 V; —Ves=1 V; f=1 MHz 40 pF Cos Capacitatea de iesire Output capacitance Vos = 20 V; —Ves= 1 V; f=1 MHz 16 pF 4) tel? < 0.02; tp = 300s (@) Frecvenfa la care partea real& a admitanfei de transfer direct scade cu 3 4B fai de valoa- rea de la 1 kHz. ‘The frecquency at wich the real part of the forward transconductance falls by 3 dB rela~ tive to the value at 1 kHz. 2 — Catalog LP.RS. Dameasa vol. It WWLP.B.S. BF 247 BANRASA © ou SILIGIU, CU EFECT DB Ghar, cu sonepUNE, 0 SILICON N CHANNEL FIELD-RFFECT ‘WRARSISTORS > os G 6 s i TOS2 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS Voc Tensiune drena-poarta +25 Vv Drain-gate voltage Vos Tensiune drena-sursi #25 Vv Drain-source voltage | Ves Tensiune poartd-sursai —25 Vv Gate-source voltage | Ig Curent de poarta 10 mA Gate current Prot Putere totala disipata (T, < 25°C) 200 mW Total power dissipation Ty Temperatura maxima a jonctiunii 125 °C Maximum junction temperature Ts Domeniul temperaturilor de stocare | —55++150 °C Storage temperature range 18BF 247 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Rusa _-Rezistenta termic& jonctiune-ambiant | max. 500 °Cihw Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru . . Parameter hin. Typ. Max. | Unit. Gate-source breakdown voltage —Ic¢=1 pA; Vos=0 30 — Tess Curent rezidual poarti-surs& Gate-source cut-off current —Ves= 15 V; Vos=0 5 Ipss Curent de drena de saturare Drain saturation current (1) Vos=15 V; —Veg=0 < BF 247 10 300 BF 247 A | 30 80 BF 247 B | 60 140 BF 247 C 110 250 — Vesou Tensiune de blocare poarta-sursa Gate-source cut-off voltage Vos = 15 V; Ip = 200 BEBE BF 247 0, BF 247 A /|1 BF 247 B |3 BF 247 C 5, [Yu Transconductanfa direct’ | Forward transconductance I Vps= 15 V; —Vos=0; \ : f=1 kHz ; 8 i mS s G i Ky Is . i TO92 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS Voc Tensiune drend-poarta +30 Vv Drain-gate voltage Vos Tensiune drena-sursa +30 Vv Drain-sourse voltage Ves Tensiune poarti-sursd 30 v Gate-source voltage Ie Curent de poart& 10 mA Gate-current Pot Putere totald disipata (Ts < 25°C) 200 mW Total power dissipation Ty Temperatura maxima a joncfiunii 125 °C Maximum junction temperature Ts Domeniul temperaturilor de stocare °C Storage temperature range 21OO LPR SON ® BF 256 BANBASA OF CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Reza _—-Rezistenta termicd joncfiune-ambiant | max. 500 “c/w Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parameiee Min. Typ. Max.) Unit. Visryocs Tensiune de stripungere drena-poarta Drain-gate breakdown voltage —Io = 1 pA; Vos=0 30 v —lIess Curent rezidual poartd-sursa Gate-source cut-off current —Ves = 20 V; Vps=0 5] nA Inss Curent de drena de saturare Drain saturation current (1) Vos = 15 V; —Vos =0 BF 256 3 18 | mA BF 256 A | 3 7\ mA BF 256 B 6 13 | mA BF 256 C [11 18 | mA — Veso Tensiune de blocare poarta-surs& Gate-source cut-off voltage Vos = 15 V; Ip = 200 pA 0,5 7\Vv [Yee] Transconductanta directa | Forward transconductance | Vos = 15 V; —Ves=0; f= 1KHz| 4,5 ; ms fev) Frecventa de taiere ; : Cut-off frequency ! (2) Vos = 15 V; —Ves = 0 1000 MHz 22(art POR. S. 4) BANEASA BF 256 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Co NE Gog Parametru Parameter Capacitate de iesire Output capacitance Vos = 20 V; —Vos = 0 Capacitatea de reactie Reverse transfer capacitance Vos = 20V; —Ves =1V; f{=1MHz Factor de zgomot Noise figure Vos = 10 V; R, = 470; = MBz (cont.) Min. Typ. Max.| Unit. | 12 pF Cistig in putere in montaj poarta- comuna cu neutralizare Common-gate neutralized insertion power gain Vos = 5 V; R= 470; f = 800 MHz 14 db ty () = < 0,02; tp = 0,3 ms (2) Freeventa la care partea reali a admitantei de transfer direct scade cu 3 dB fat de valoa- rea de la 1 kHz. ‘The frequency at wich the real part of the forward transconductance falls by 3 dB rela- tive to the value at 1 kHz.I. P. BR. 5. & 2N 5020, 2N 5021 _RANBASA oS TRANZISTOARE CU SULICIU: CU FECT DE Imp, CU JONCTIUNE, SULICON. P CHANNEL FIELD EFFECT ue ae TRANSISTORS 8 S$ GD i) sb s TO18 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS Veo Tensiune poarti-drend +25V Drain-gate voltage Vos Tensiune dreni—sursd +25 V Drain—source voltage Prot Putere totala disipaté (T, < 25°C) 250 mw Total power dissipation Thy Temperatura maxima a jonctiunii 150°C Maximum junction temperature | Ts Domeniul temperaturilor de stocare —55...4+150°C Storage temperature range * DATE PRELIMINARE PRELIMINARY DATA 4 Pe2N 5020, 2N 5021 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Rry-a Rezistenta termicd joncfiune-ambiant 5 Junction-ambient thermal resistance max. 355 cIw 3 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru a Parameter | Min. Typ. Max. Visayess Tensiunea de strpungere poarti-surs& Gate-source breakdown voltage Ig = 10 pA; —Vps =0 2N 5020 | 25 2N 5021 | 25 Igss Curent rezidual poarta-surs4 Gate-source cut-off current —Ves =15V; —Vos = 0 1 Vest Tensiunea de blocare poartd-sursa Gate-source cut-off voltage —Vns = 15V; —Ip = 1 pA 1 0,3 5 — Ipss Curentul de drend “de saturare Drain saturation current —Vos = 15 V; Ves =0 | 2N 5020 0,3 1,2 2N 5021 1 10 Yo | ‘Lransconductanta directa Forward transconductance —Vps = 15 V; Vos =0; f =1kHz 0,3 4LPR Sg 2N 5020, 2N 5021 saksmnaix ws CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametru | Min. Typ. Max.| Unit. Cy Capacitatea de intrare Input capacitance —Vns = 15 V; Vos = 0; f = 1 MHz 15 | pF NF Factor de zgomot Noise figure —~Vys=5 V; —Ip=0,3mA ; Re=1MQ; f= 1kHz 65 dBTRANZISTOARE DE MICA PUTERE LOW - POWER TRANSISTORSFANT P. BS. BC 107, BC 108 4) BANEASA BC 109, BC 190 TRANZISTOARE NPN CU SILICIU PLANAR- EPMAMULe BE SOASL ‘FRECVENTA SILICON NPN BPITAXLAL-PLANAR AP TRANSISTORS KY TOW VALORI LIMITA ABSOLUTA BC BC BC BC ABSOLUTE MAXIMUM RATINGS 107 108 109 190 Veno Tensiune colector-bazi (Iz = 0) 50V 30V 30V 70V} Collector-base voltage Veo Tensiune colector-emitor (Ip = 0) 45V 20V 20V 64V Collector-emitter voltage Vez0 Tensiune emitor-baz (Ic = 0) 6V Emitter base voltage Ig Curent de colector 100 mA Collector current Tow Curent maxim de colector 200 mA Collector peak current Ip Curent de bazi 50 mA Base current Prot Putere totala disipata (T, < 25°C) | 300 mW Total power dissipation Ty Temperatura maxim a joncfiunii 175 °C Maximum junction temperature Ts Domeniul temperaturilor de stocare —55...4+175°C Storage temperature range |BC 107, BC 108 BC 109, BC 190 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Ruy-a —_- Rezistenfa termica joncfiune-ambiant max. 500 °C/W Junction-ambient thermal resistance Ruy-c Rezistenfa termicd jonctiune-capsuld max. 200 °C/W Junction-case thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru | Parameter Min. Typ. Max.) Unit. Teno Curent rezidual colector-baza Collector-base cut-off current = 30 BC 108, BC 109 15 | nA BC 107 15} nA BC 190 15 | nA Ves = 30V; Ty = 150°C BC 108, 15 | pA BC 109 15 | eA Ves = 50V; Ta = 150°C BC 107 15 | pA Ves = 70V; Ta = 150°C BC 190 15 | pA Vosrjcro += Tensiune de strapungere colector- emitor Collector-emitter breakdown voltage i (l) Ig =2mA BC 108, BC 109 | 20 v BC 107 45, Vv BC 190 64 Vv Viszyeso Tensiune de strapungere emitor-bazi Emitter-base breakdown voltage In=1pA 6 v Versat Tensiune de saturafie colector-emitor Collector-emitter saturation voltage (1) 10 mA; 0,5 mA 250 | mV (1) 100 mA; TI, SmA 600 | mV (1) tp/T < 0,02: tp = 0,3 ms 30GARE PBB. G “] BANEASA_ CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS BC - 107, BC 108 BC 109, BC 190 Rg=2 kQ ;f=30 Hz...15kHz (cont.) porametra Min. Typ. Max. | Unit, Varo Tensiune baz4-emitor Base-emitter voltage Ip =2mA; Ve=5 V 550 700 | mV bse Factor de amplificare in curent continuu D.C. forward current transfer ratio Ic = 10 pA; Ve=5V gr. A 40 - g. B 100 - gr. C 100 _ Ig =2mA; Ve=5V gr. A | 120 220 | — gr. B | 180 460 | — gr. C | 380 800 | ~— fy Frecventa de tranzitie Gain bandwidth product To =0,5 mA; Veg=5V; f = 30 MHz 85 MHz Ip = 10 mA; Ve=5V; f = 100 MHz 300 MHz Ceo Capacitate colector-baza Collector-base capacitance Ves = 10V; f= 1 MHz 4,5 | pF NE Factor de zgomot Noise figure Ie = 200 4A; Vere=5V; BC 107 10 | dB f=1kHz; Af = 200 Hz BC 108 10 |} dB BC 190 10 | dB Ic = 200 pA; Ver=5V; BC109 4| dB (1) ty/T,< 0,02; tp = 0,3 ms 3BC 109, BC 190 8C 107, BC 108 CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS Parametru . . ‘Parameter Min. Typ. Max.| Unit. 1 Configurafia emitor-comun Common-emitter configuration | Ic = 2mA; Ver=5V; f= 1kHz ‘te Rezistenfa de intrare Short-circuit input resistance ge A 16 4.5 | kQ gr. B 32 85 | kQ gr c 6.0 15 | kQ Hoe Conductanta de iegsire Open circuit output conductance gr A 30 | uS gt. B 60 | uS gr. c 110 | pS Me Factor de amplificare in curent alternativ AC. forward current transfer ratio gr A 125 260) — gr. B 240 500} — gr. C 450 900 | — Not&: BC 190 S are/hes Vigpicgo=80V @ I= 2mA gf fand by = 125 +500 @ Ip = 2mA; Veg = 5V; f = lkHe moto 00) i) tows | Fig. 1, Puterea total’ disipat’ : Total power dissipation “0 Ryy-a Fare radiator (Without heat sink) nm Ryze Cu radiator infinit (With infinite heat Wd sink)TRANZISTOANE NPN CU SILC PLANA ERITAXIALE DE JOAS\ FRECVENTA SILICON NPY EPITAXIAL-PLANAR AP ‘TRANSISTORS | | a2 \e ) VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS Vero Tensiune colector-emitor (Ip = 0) Collector-emitter voltage Veso _-‘ Tensiune emitor-bazi (Ic = 0) Emitter-base voltage Tow Curent maxim de coiector . Collector peak current Iau Curent maxim de bird Base peak curent Prot Puiere totala disipata (1) Total power dissipation mperatura maximA a joncfiunii Maximum junction temperature Ts Domeniul temperaturilor de stocare Storage temperature range | | | | Ty Ty | | (1) Terminatele mentiaute pind la 2mm de capsul& Ia Ty < 25°C At 2mu from the case the leads kept at Ty < 25°C 3 — Catalog LP.R.S, Baneasa vol. IILLPRS. Bc 170 BANBASA CARACTERISTICI TERMICE THERMAL CHARACTERISTICS | Rus-a — Rezistenfa termicé joncfiune-ambiant i Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Yarametry Min. Typ. Max.i Unit. | Icso Curent rezidual colector-bazai Collector-base cut-off current Ves = 15 V Toxo Curent rezidual colector-emitor Collector~ emitter cut-off current max. 500 °C;W 100 | nA pA iune de strapungere colector- emitor Collector-emitter breakdown voltage (2) Ip =2mA 20 Viameso ‘Tensiune de strapungere emitor-bazi Emitter-base breakdown voltage Ty =1pA Versat Tensiune de saturatie colector-emitor Collector-emitter saturation voltage (2) Ic=30mA; Ip =3mA hye Factor de amplificare in curent continuu i D.C. forward current transfer ratio | i Tez=lmA; Vee =1V gr A; 35 1005 — gr. B | 80 250 — gr. C | 200 600: — | Veerjcro Vv a < mV fr Frecvenfa de tranzitie Gain bandwidth product | \ Ve =5V: | | 1 250 | MHz Cono Capacitate colector-bazi ' Collector-base capacitance \ | Veo = 10 V; f = 1 MHz ! 6 | pF (2) tyiT < 0.02; tp = 0,3 ms _ 34LP.R.S. BANEASA BC 171, BC 172 BC 173, BC 174 TRANZISTOARE CU SILICIC NPN PLANAR, EPITAXIALE DE AUDIOFRECVENTA SILICON NPN EPITAXIAL PLANAR AF . Bee ‘TRANSISTORS E B € C8 iE VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS TO92 BC RBC BC BC 171 172 173 174 Vezo -‘Tensiune colector-emitor (Ip =0) | 45V 25V 25V G4V Collector-emitter voltage Storage temperature range - | Veno Tensiune emitor-bazi (Ig = 0) 6V 5V 5V 5V Emitter-base voltage To Curent de colector de virf | 100 mA Collector peak current t Tou Curent maxim de baza i 20 mA Base peak current Pree Putere totala disipat’ (1) 300 mW Total power dissipation Tye ‘Temperatura maxima a jonctiunii | 150 °C Maximum junction temperature Ts Domeniul temperaturilor de stocare | —55++150°C (1) Terminalele mentinute pind la 2 mm de capsula la Ty < 25°C At 2mm from the case the leads kept at Ty < 25°CBC 171, BC 172 BC 173, BC 174 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Raya... Rezistenfa termica jonctiune-ambiant . eon | “Junction-ambient thermal resistance mas. 420 °C/W CARACTERISTICI ELECTRICE (T,; = 25°C) ELECTRICAL CHARACTERISTICS Parametru Parameter Unit. Min. Typ. Max.) Toxo Curent rezidual colector-emitor i Collector-emitter cut-off current | von = 15 V 12| pA | Toes Curent rezidual colector-emitter | Collector-emitter cut-off current ver = 30V; Ver= 0 BC 172 15 | nA BC 173 15 | oA Vee = 50V; Var=0 BC 171 15 | nA Vex =70V; Voe= 0} BC 174 15 | mA Vienyceo Tensiune de strapungere colector- enntor i Cellector-emitter breakdown voltage i (2) Ie=2mA BC 171 | 45 | BC 172 | 25 BC 173 | 25 BC 174 | 64 Tensiune de strépungere emitor-bazi Emitter-base breakdown voltage Te =1yA BC 171 BC 172 BC 173 | BC 174 | Versat ‘Tensicne de saturafie colector-emitor Collector-emitter saturation voltage (2) Ie= 10 mA, Ip =0,5 mA Q) Ic=100mA, Ip=5mA OP Factor de amplificare in curent alternativ AC forward current transfer ratio Ig = 2mA; Vee =5V; f =1 kHz ar A gr. B er. C Frecventa de tranzitie Gain bandwidth product Vee = 5 V; Ic = 10 mA, fr = 100 MHz Capacitate colector-bazi Collector-base capacitance Ves = 10 V; f = 1 MHz BC 171, BC 172 BC 173, BC 174 (cont.) re 7 : Min. Typ. Max.! Unit. | —-| i | | 1,05 V 1 | | 40 _ | 100 — | 100 - ; { i | » 120 220. — | 180 460 | — | 380 800 | | : \ | 125 260; — | 240 500 | — ' 450 900 | — i 250 MHz | i ' 6| pFBC 171, BC 172 LP. R. = BC 173, BC 174 BAngEass OF CARACTERISTICL ELECTRICE (T,=25°C) ELECTRICAL CHARACTERISTICS (cont) parametri Min. Typ. Max.) Unit. Noise figure Ic = 0,2 mA, Ver = 5V, | | NE Factor de zgomot R, =2kQ, f = 30 Tz + 15 kHz ' BC 173 4) 4B | | Io =0,2 mA, Ven =5V, BC 171 1oj ap | =2kO, f= 1kHz BC 172 10 | dB ' Af = 200Hz BC 174 | ty, 2) “F <0.02; tp = 0.8 msBANBASA ‘TRANZISTOARE CU SILICHD PNP PLANAR EPITAXIALE DE JOASA PRECVENTA SILICON PNP EPITAXIAL PLANAR AF TRANSISTORS BC 177, BC 178 BC 179 TOS VALORI LIMITA ABSOLUTA BC BC BC ABSOLUTE MAXIMUM RATINGS 177178179 —Veso Tensiune colector-bazi (—In=0) 50V 30V 25V Collector-base voltage i =Vero —Tensiune colector-emitor (—Ip= 0) | 45V 25V 20V , Collector-emitter voltage ‘ —Veno Tensiune emitor-bazi (—Ic = 0) 5Vv i Emitter-base woltage | —Te Curent de colector 300 mA : | Collector current | + —Tos Curent maxim de colector 200 mA | Collector peak current ' —Ip Curent de bazi 50 mA | Base current | Prot Putere total& disipata (T, <25°C) 300 mW | | Total power dissipation | Ty Temperatura maxima a jonctfiunii 175 °C ! Maximum junction temperature | —55++175°C | Ts Domeniul temperaturilor de stocare Storage temperature rangeBC 177, BC 178 BC 179 CARACTERISTICL TERMICE THERMAL CHARACTERISTICS — | Raya Rezistenta termic& joncfiune-ambiant x. 500 °C/W | Junction-ambient thermal resistance | | Ruse Reristenfa termic& joncfiune-capsula max. 200 °C/W | Junction-case thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS ' Parametru Min. Typ. Max, Unit. ' } I 1 —Teno Curent rezidual colector-baza ‘ : Collector-base cut-off -current ! Va 10) nA : —Ves = > Ta = 150°C 40 uA i ' 1 —Vaarjcao Tensiune de strapungere colector-baza i tor-base breakdown voltage | Io = 10 pA BC 177 ; 50 iv BC 178 | 30 iy BC 179 | 25 iv —Vinayro Tensiune de strapungere colector- | : | i + breakdown voltage j | () a | gs i BO 7 | 48 voo| : : BC 178 | 25 ivooG : BC 179 | 20 iv | —Vesneso Tensiune de stripungere emitor-bazi | i : Emitter-base breakdown voltage | —Ip=1pA 5 iv | 40BC 177, BC 178 BC 179 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) —Veesat (1) —Voxon hrg it Cozo “A ‘3 (1) tp/T < 0,02; tp Parametru Parameter Tensiune de saturafie colector-emitor Collector-emitter saturation voltage —Ic = 10 mA; ~I, = 0,5 mA —I, = 100mA; —Izp =5mA Tensiune bazi-emitor Base-emitter voltage —Vee = 5V; —Ie = 2mA Factor de amplificare in curent continuu DC forward current transfer ratio —Te = 10 pA; —Ven = 5V —Ie =2mA; —Vee=5V gr. Ours OP Frecvenfa de tranzitie Gain bandwidth product —Ver = 5 V; —Ic = 10 mA; f = 100 MHz Capacitate colector-baza Collector-base capacitance —Ves = 10V; f = 1 MHz Factor de zgomot Noise figure —Veg = 5V; Te = 200 pd; R,=2kQ;f£=1kHz BC 177 Af = 200 Hz BC 178 —Vew = 5 V; —Ic = 200 pA; R, =2kQ; f= 30Hz...15 kHz BC 179 3 ms Min. Typ. Max., Unit. | 200 | mV 950 | mv 700 | mV pFBC 177, BC 178 LERS® BC 179 CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS | Farametrt Min. Typ. Max.! Unit. i - i Montaj in emitor comun | | { Common emitter configuration | | —Ip=2mA; —Vee =5V; | f=1kHz he Rezistenta de intrare i Short circuit input resistance | ' gr. VI | 04 2,2 | kQ | gr A 12 45 | kQ \ gr. B | 32 85 | kQ | gr. C 6 15 | kQ 1 Doe Conductanfa de iegire ! Open circuit output conductance i gr. VI 40 | us gre A 50 | pS gr. B 70 | pS gC 150 | us be Factor de amplificare in curent alternativ | A.C. forward current transfer ratio | gr. VI | 75 150] — gr A | 125 260! — gr. B | 240 500) — | gr. C 450 900! — 427 Ala Putere totalé disipata ‘Total power dissipation Ruy-a Fark radiator (Without heat sink) Ruj—c Cu radiator infinit (With infinite heat sink) BC 177, BC 178 BC 179BC 250 ‘TRANZISTOARE CU SILICIL PAP PLANAR RPITAXIALE DE AUDIOFRECVENTS . SILICON PNP EPITAXIAL PLANAR AP ‘TRANSISTORS T092 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATIN! I Storage temperature range —Vego} | Tensiune colector-emitor (—Ig = 0) 20V Collector-emitter voltage —Veso Tensiune emitor-bazi (—Ic = 0) 4v Emitter-base voltage | —ler Curent de colector de virf | 100 mA Collector peak current | ~Iox Curent maxim de bazi 20 mA | Maximum base current Prot Putere totali disipata (1) 200 mW Total power dissipation | ee De Temperatura maxim’ a joncfiunii 150 °C Maximum junction temperature | —55++150°C | Ts Domeniul temperaturilor de stocare (1) Terminatele menfimute pin la 2 mm de capsul la Ty < 25°C At 2 mm from the case the leads kept at Ty < 25°C a4BC 250 CARACTERISTICI TERMICE ‘ THERMAL CHARACTERISTICS Raya -Rezistenfa termici joncfiune-ambiant Junction-ambient thermal resistance max. 420 °C/W | CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS i Parametru i | ans | Parameter Min. Typ. Max} Unit. | —Iczo Curent rezidual colector-emitor Collector-emitter cut-off current —Vee = 15 V | 12) uA | ! —Ieno Curent rezidual colector-bazi | i Collector-base cut-off current] i —Ves = 15 V 100 | nA i | —Vierjezo Tensiune de strapungere colector- | emitor i | Collector-emitter breakdown voltage (2) —Ie =2mA 20 —Vosnyeno Tensiune de strapungere emitor-bazi Emitter-base breakdown voltage —Iy = 100 nA 4 —Vexsat Tensiune de saturatie colector-emitor i Collector-emitter saturation voltage | I, = 10 mA, —Ip = 1 mA —Voassat Tensiune de saturatie bazi-emitor : Base-emitter saturation voltage | —Ic = 10 mA, —Ip = 1 mA 09;,VvLPR BE BC 250 BANEASA OF CARACTERISTICL ELECTRICE (1, = 25°C) ELECTRICAL CHARACTERISTICS Parametru Parameter Min. Typ. Max.| Unit. | hre Factor de amplificare in curent continuu | DC forward current transfer ratio | ~Ie=1mA, —Va=1V gr A 35 100} — gr. B 80 250} — gC 200 600 | — fy Frecventa de tranzifie Gain bandwidth product —Vee =5V, —Ie = 10 mA, f= 100 MHz 250 MHz 2) % coz: tp = 0,3 msoe iP. B.S, BC 251, BC 252 BANEASA — BC 253, BC 256 TRANZISTOARE CU SILICIO PNP. PLANAR EPITAXIALE. DE AUDIOPRECVESTA SLLICON PNP EPITAXIAL PLANAR AF ‘TRANSISTORS rn | TO92 VALORI LIMITA ABSOLUTA BC BC BC BC ABSOLUTE JMAXIMUM RATINGS 251) 252 253 254 | — Veeo ‘Tensiune colector-emitor (—Ip = 0) 45V 25V 25V 64V | Collector-emitter voltage \ | Storage temperature range — Vaso Tensiune emitor-bazi (—Ic = 0) 4V Emitter-base voltage | — few Curent de colector de virf 100 mA Collector peak current — Ts Curent maxim de baza 20 mA | Base peak current : | Prot Putere totali disipata (1) 300 mW | Total power dissipation | Tye ‘Temperatura maxim’ a joncfiunii | 150 °C Maximum junction temperature i i i Ts Domeniul temperaturilor de stocare —55++150 °C (1) Terminalele menfinute pind la 2mm de la capsuld la T, < 25°C At 2 mm from the case the leads kept at T, < 25°C 47BC 251, BC 252 BC 253, BC 256 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Ruy-a Rezistenfa termica joncfiune-ambiant Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS max. 420 °C/W | Pi tr . ae i Parameter Min. Typ. Max.| Unit. I —Iceo Curent rezidual colector-emitor | Collector-emitter cut-off current i —Veg = 15V 12] pa — Tees Curent rezidual colector-emitor Collector-emitter cut-off current —Veg = 25V; —Vsz =0 BC 252 15 | nA BC 253 15 | nA —Vce = 45V; —Vag =0 BC 251 15} nA —Veg = 64V; —Vaz =0 BC 256 15] nA | — Vosryczo Tensiune de strapungere colector- emitor Collector-emitter breakdown voltage \ (2) -Io=2mA BC 251 45 iv ' BC 252, BC 253 | 25 iV i BC 256 | 64 |v — Veneno Tensiune de stripungere emitor-baza | Emitter-base breakdown voltage i | —Ig = 100 nA 4 iv — Voeut ‘Tensiune de saturafie colector-emitor Collector-emitter saturation voltage —Ie = 10mA; —Ip=1mA 03) V — Veeat Tensiune de saturatie buzi-eimitor Base-emitter saturation voitage —Ic = 10 mA, —Ip = 1 mA 0,9 | Vv@:.. R. Ss. BC 251, BC ‘252 BANEASA BC 253, BC 256 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.} Farametru Min. Typ. Max. Unit. t I bre Factor de amplificare in curent | | i continuu i ' DC forward current transfer ratio i | —Ic = 10 pA; —Ver = 5V gr A 40 _— gr. B | 100 _— er. C | 100 jo : Ie =2mA; —Veg =3V gr A | 120 ao) oj gr. B | 180 460; — 3} gr. Cc | 380 800} — Dee Factor de amplificare in curent } alternativ ‘ AC forward current transfer ratio | Ic =2mA; —Ver =5V; i f=1kHz gr A | 125 260! — gr. B | 240 500 | — gr. Cc | 450 900 | — fr Freevenja de tranzitie i bandwidth product | i i 5V; —I-e = 10mA; ' t = 100 MHz | 250 | MHz NE Factor de 2gomot ¢ figure i >= O.2mA; —Ven =5V; | <0; f 2 30 Hz + 15 kHz BC 253 4| 4B 3 —Vee = 5 V; i = 1 kHz BC 251 | I BC 252, BC 256 | 10 | dB 4 — Caislog 1.?.R.S. Bémeasa vol, It asBC 261, BC 262 IPR. Ss. ‘1 BC 263, BC 266 BANEASA Wh THANGISTOARE CU SILC” PNP PLANAR EPITAXIALE DE JOASA PRECVENTA SULICON PMP EPITAXIAL PLANAR AP ‘TRANSISTORS “ € ‘ K 1s TO18 VALORI LIMITA ABSOLUTA BC BC BC BE ABSOLUTE MAXIMUM RATINGS 261 262 263 266 — Verso Tensiune colector-bazi (—Iz = 0) 50 V 30 V 25 V 70V Collector-base voltage x — Vceo Tensiune colector-emitor (—Ip = 0) 45. V 25 V 20V 64V | Collector-emitter voltage i — Vexo ‘Tensiune emitor-bazi (—Ie = 0)] 5Vv Emitter-base voltage — Ic Curent de colector 100 mA Collector current — Tew Curent maxim de colector | 200 mA Collector peak current | | — I Curent de baz& 4 50 mA. | Base current | | Pye Putere total& disipatd (Ta < 25°C) | 300 mW i Total power dissipation Tyx Temperatura maxima a joncfiunii 175 °C Maximum junction temperature Ts Domeniu!l temperaturilor de stocare —55+4175 °C Storage temperatureBC 261, BC 262 BC 263, BC 266 CARACTERISTICI TERMICE } THERMAL CHARACTERISTICS me a Ruy-a Rezistenfa termici joncfiune-ambiant max. 500°C/W Junction-ambient thermal resistance Ruy-c —- Rezistenfa termicd joncfiune-capsula max. 200°C/W Junction-case thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru m | Parameter Min. Typ. Max.) Unit. —Iczo Curent rezidual colector-baza Collector-base cut-off current — Ves = 20 V 10 | nA — Ven = 20 V; Ta = 150°C 4] yA —Vsxjeno Tensiune de strapungere colector-bazi Collector-base breakdown voltage — Ic =10 pA BC 261 50 v BC 262 30 Vv BC 263 25 Vv BC 266 70 Vv —Visrycro Tensiune de strapungere colector- emitor Collector-emitter breakdown voltage (l) — Ie =2 mA BC 261 | 45 v BC 262 | 25 v BC 263 | 20 Vv BC 266 64 v | 51BC 261, BC 262 BC 263, BC 266 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) ra I peametn Min. Typ. Max.| Unit. ! { — Vsrjeno Tensiune de strapungere emitor-bazi | Emitter-base breakdown voltage i —Ig=1 pA 5 Vv Tensiune de saturafie colector-emitor | Collector-emitter saturation voltage —Ie=10 mA; — Ip =0,5 mA 200 | mv —Ic=100 mA; — Ip=5 mA 950 | mV Tensiune bazd-emitor Base-emitter voltage (1) - Vee=5 V; —Ip=2 mA 700 | mV | beg Factor de amplificare in curent Hl continuu DC forward current transfer ratio —Ic=10 pA; — Ven=5V gr. A 40 fo g. B 100 - gr. C 100 _ —Ig=2 mA; — V=5V ! gr. VI | 70 130} — ge A 120 220 - gr. B 180 460} — | gc 380 800} — | fr Frecventa"de tranzitie i Gain bandwidth product — Ve=5V; — Ic = 10 mA; £= 100 MHz 130 MHz A) tp/T < 6,02; tp = 0,3 ms 52BC 261, BC 262 BC 263, BC 266 CARACTERISTICI ELECTRICE '(T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) ] Parametru : A | Parameter Min. Typ. Max.| Unit. | Ccpo Capacitate colector-bazai | Collector-base capacitance — Vee= 10 V; f=1 MHz | 7\ pF NF Factor de zgomot | Noise figure — Vea=5 Vi — Ie = 200 pA Rg=2kQ;f=1kHz ‘BC 261) 10 | dB Af = 200 Hz BC 262 10 | dB BC 266 10 | dB | =5V; — Io=200 vA; I < 8 Ry =2 kQ; BC 263 | 4| ap | CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS Farametr Min. Typ. Max.| Unit. | | Montaj in emitor comun | Common emitter configuration | —Ip=2 mA; — Ve=5V; f=1 kHz Bie Rezistenta de intrare Short circuit input resistance gr. VI 0,4 2,2 | kQ gr A 1,2 45 | kO gr. B 32 8,5 | kO gr. 6 15 | KO 53BC 261, BC 262 I. P. Ry Ss. BC 263, BC 266 BANEASA CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS / (cont.) Parametru |stin. Typ. Max.| Unit. | | dee Conductanfa de iesire | Open circuit output conductance 40 | pS 50 | ys 70 | uS 150 | pS 1 Dee Factor de amplificare in curent | alternativ A.C. forward current transfer ratio gr. VI 7 150} — aA 125 260} — gr. B 240 500 | — gr 450 900} — H Tit Pp SL Low | sed EA tT ok ! o 00 a0 Putere total& disipatt Total power dissipation Rtsj—a Fara radiator (Without beat sink) Ruj—c Cu radiator infinit (With infimite heat sink)[ent PRS Di BC 327, BC 328 TRANZISTOARE CU SILICIU PNP PLANAR EPITAXIALE DE AUDIOFRECVENTA sit T™® (P EPITAXIAL PLANAR AP RS ey @ TO92 ALORI LIMITA ABSOLUTA BSOLUTE MAXIMUM RATINGS BC 327 BC 328 — Vees Tensiune colector-emitor (—Vez=0) | 50V 30V Collector emitter voltage — Vero Tensiune colector-emitor (— Ip = 0) 45V 20V | Collector-emitter voltage | — Veso ‘Tensiune emitor-bazi (— Ie = 0) | 5V Emitter-base voltage ~Ic Curent de colector 800 mA Collector current — Tae Curent de colector de virf 1A Collector peak current -—Ip Curent de baza 100 mA Base current Prt Putere totala disipata (1) 625 mW Total power dissipation | Ty Temperatura maxima a joncfiunii 150°C Maximum junction temperature Ts Domeniul temperaturilor de stocare —55++150°C Storage temperature range (1) Terminalele menfinute pind la 2mm de la capsuli la Ty < 25°C At 2mm from the case the leads kept at Ty < 25°C 55m2 BC 327, BC 328 nawnasa CS CARACTERISTICL TERMICE THERMAL CHARACTERISTICS Rusa. Rezistent& termica jonctiune-ambiant 1 ) Junction-ambient thermal resistance | max. 250 “C/Ww Rey-a Rezistenfa termica joncfiune-ambiant cu radiator de cupru 10x 10mm x3um | max. 200 °CiWw Junction-ambient thermal resistance. with copper cooling area Ruj-¢ Rezistenti termici jonctiune-capsuli | max. 90 oClw Junction-case thermal resistance CARACTERISTICE ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS P: t . a Parameter Min. Typ. Max Unit. — Ices Curent rezidual colector-emitor Collector-emitter cut-off current | — Vee = 45 V; —Vse=0 BC 327 100 | na = Ven = 25 V; —Vex =0 BC 328 100 | nA — Veerjces Tensiune de strapungere colector- | emitor j Collector-emitter breakdowa voltage | —Ic=0,1A; —Vee=0 BC 327 | 50 |v BC 328 | 30 iv — Verjro Tensiune de stripungere colector- | i emitor i | Coliector-eritter breakdown voltage | ' — Ic = 10 mA BC 327 | 45 ,v BC 328 | 20 v 56IP. RS cS BC 327, BC 328 BANEASA CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametru lan te ' Parameter i Min. Typ. Max.) Unit. i | —Vaxwso Tensiune de strapungere emitor-bazii | i Emitter-base breakdown voitage | — Ie = 100 pA ; 5 I | iv \ ~Verat Tensiune de saturafie colector-emitor | Collector-emitter saturation voltage (2) = Ie = 500 mA; ~ Ip = 50 mA [mv | View Tensiune bazi-emitor | Base-emitter voltage | QQ) — Vee=1V; —Ic=300 mA, 12} v \ i : bee Factor de amplificare in curent continuu DC forward current transfer ratio (2) — Vee =1V; — Io = 300 mA (2) 40 Q) - Ve =1V; —Ie= 100 mA gr. 16 gr. 25 gr. 40 100 250, - | 160 400 | 250 630 | -- fr Frecvenfa de tranzitie Gain bandwidth product Luo | ME Coso Capacitate colector-baza Collector-base capacitance Hl } — Vee= 10 V;f=1 MHz i 12 | pF te c. @) F< 002; ty = 0,8 msIPRS. OR BC 337, BC 338 pAneasa QDS TRANZISTOARE CU SILICIU NPN PLANAR EPHTAXIALE DE AUDIOPRECVENTA SILICON NPN EPITAXIAL PLANAR AY TRANSISTORS TO92 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS BC 337 BE 338 Veus ‘Tensiune colector-emitor (Vaz = 0) [ 50V 30V Collector-emitter voltage | | Vero Tensiune celector-emitor (Ip = 0) 45V 20V : Collector emitter voltage | Vewo Tensiune emitor-baz (Ip = 0) ' 5V Emitter-base voltage ! | Ic Curent de colector 800 nA | Collector current i Tow Curent de colector de virf | 1A | Collector peak current | Is Curent de bazk : 100 mA Base current Pact Putere totali disipat& (1) ; 625 mW Total power dissipation | Tye Temperatura maxima a joncfiunii | 150°C | | Maximum junction temperature i Ts Domeniul temperaturilor de stocare —55++150°C | Storage temperature rang: (1) Ternsnalele mentinnte pind Ja 2mm dec AU 2 nm frew the cose the Jead at Jy 028°CH(i P. R. Ss, BANEASA CARACTERISTICL TERMICE THERMAL CHARACTERISTICS BC 337, BC 338 Ray-a _ Rezistenfi termic& joncfiune-ambiant (1) Junction-ambient thermal resistance ezistenfi termica joncfiune-ambiaut Resy-a : cu radiator de cupru | Junction-ambient thermal resistance with copper cooling area 10 x 10mm x 35 ym max. 200 °C/W Ray-e Revistenfa termica joncfiume-capsuli | max. 90 c/w Junction-case thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS max. 250 CW Parametru a Parameter | Min. Typ. Max.| Unit. Tews Curent rezidual colector-emitor ' | Collector emitter cut-off current | i Tn 45V50 Vp BC 337 | 00 nA ’ BC 338. | 100 | na ripungere colector- i i | Collector-emitter breadkown voltage | | to Ol mA; Ves =0 BC 3387 > 50 /x BC 338 | 30 lv ipungere colector- | | emitor : | Collector-cmitter breakdown voltage | | (2) Te = 10 mA BC 337 | 45 iv BC 338 j 20 |v Veano ‘Tensiune de strépungere emitor-baza | | Emitter-base breakdown voltage | Tr = 100 pA 13 vBC 337, BC 338 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametra | Min. Typ. Max., Unit Collector-emitter saturation voitage (2) Te = 500 mA; Ip = 50 mA 3 Venue ‘Tensiune de saturatie colector-emitor | : : | i i mV VaEoa Tensiune bazi-emitor ' Base-emitter voltage | (2) Ver =1 V; Ic = 300 mA | 12 | i \ bre Factor de amplificare in curent centinuu D.C. forward current transfer ratio’ 2) Ves =1 V; Ic = 300 mA (2) Vos =1 Vi To= 100 mA gr. 16 gr. 25 gt. 40 B38 88 fy Freeventa de tranzifie Gain bandwidth product Ven = 5 V; Io = 10 mA; f = 50 MHz 100 MEz Cozo Capacitate colecter-baza Coilector-base capacitance : Vee = 10 V; f= 1 MHz i 12 | pF 4; 2) t < 0,02; tp = 0,3:nsBANEAS: A. TRANZISTOARE CU SILICIO NPN PLANAR BEXTAXIALE. CU ZGOMOT REDUS, DE AUDIO-FBECVENTA SILICON NPN EPITAXIAL PLANAR LOW NOISE AP TRANSISTORS How Norst x TOS VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS BC 413 BC 414 Veso Tensiune colector-baz4 (Ip = 0) 45V. 5soV i Collector-base voltage j Vero -—Tensiune colector-emitor (In = 0) 30v 45 CS Collector-emitter voltage Vaso Tensiune emitor-bazi (Ip = 0) 5V Emitter-base voltage Tow Curent de colector de virf | 100 mA | Collector peak current i { Tou Curent de baz& | 20 mA Base current | Pt --Putere totala disipat& (1) | 300 mW Total power dissipation i Tre Temperatura maxima a jonctiunii 150°C Meximum junction temperature Ts Domeniul temperaturilor de stocare —55++150°C Storage temperature range (1) Terminalele menfinute pind lo 2mm de capsuld ta, Ty < 25°C 2 mm from the case the leads kept at Ty < 25°C etIP. B.S. © 8C 413, BC 414 BAneasa OPS CARACTERISTICI TERMICE THERMAL CHARACTERISTICS | | Rusa - Rezistenfa termicd joncfiune-ambiant max. 420 °C/W | Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru " Parameter Min. Typ. Max. | Unit. Teso Curent rezidual colector-baza Collector base cut-off current Vos = 30 V 15 | nA Izzo Curent rezidual emitor-baza Emitter base cut-off current Ves = 4 V 15] nA Vianieno —- Tensiune de striapungere colector-baza Collector-base breakdown voltage | | | | i | emitor | | I Ie = 10 pA BC 413 | 45 v BC 414 50 Vv Visryczo © Tensiune de strapungere colector- Collector-emitter breakdown voltage (2) Ic = 10 mA BC 413 | 30 Vv BC 414 45 Vv Vosnyeeo Tensiune de strapungere emitor-bazi Emitter-base breakdown voltage Tz = 10 pA 5 VvCARACTERISTICI ELECTRICE (T, = 25°C) LPR S. jf BANEASA, ELECTRICAL CHARACTERISTICS BC 413, BC 414 (cont.) Parametru Parameter | Min. Typ. Max. | Unit. Versat rg | Tensiune de saturafie colector-emitor | Collector-emitter saturation voltage Ip =10 mA; Ip=0,5 mA Te = 100 mA; Ip = 5 mA Tensiune de saturafie bazi-emitor Base-emitter saturation voltage Io= 10 mA; Ip =0,5 mA Ip = 100 mA; Ip=5 mA Factor de amplificare in curent continua DC forward current transfer ratio Ie = 10 pA; Vee=5 V gr. gr. gr. Ie = 2 mA; Venp=5 V gr. gr. gr. Factor de amplificare in curent alternativ AC forward current transfer ratio Ve=5 V;Ie=2 mA f=1 kHz gr A OF OD Frecventa de tranzifie Gain bandwidth product Vee =5 V; Io= 10 mA; £= 100 MHz 700 100 120 180 125, 240 450 aR a So mV mV mV mV iBC 413, BC 414 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametru | Parameter Min, Typ. Mas.| Unit | Ceso -Capacitate colector-baz& | | Collector-base capacitance \ | Vee = 10 V; f= 1 MHz | 25 | pF NF Factor de zgomot | Noise figure | | ! Ven =5 Vi Te = 200 uA; Ry =2 KQ; f= 30 Hz + 15 KHz 3| 4B vw ‘Tensiune de zgomot la intrare | ! Noise voltage at transistor input | Vor=5 V; Te = 200 vA; | ! R, =2 KQ; f = 10+50 Hz | 0,185) aV i Cireuit de test pentru: Vo Test circuit for * Reactie megativd pentra amplificare de tensiune constant& Negative feedback for a constant voltage amplificationTRANZISTOARE CU SILICIU PNP PLANAR EPITAXIALE, CU ZG0MOT REDUS, DE AUDIO-PRECVENTA SILICON PNP EPITAXIAL PLANAR LOW NOISE AL TRANSISTORS VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS BC 415 BC 416 — Veso Tensiune colector-bazi (—Iz = 0) | 45Vv 50 V Collector-base voltage ! — Veno Tensiune colector-emitor (— Ip = 0) 30V 45 Collector-emitter voltage ! ! — Vero ‘Tensiune emitor bazi (—Ie=0) | 5Vv Emitter-base voltage ' | — Tew Curent de colector de virf i 100 mA | Collector peak current | ; — Tem Curent maxim de bazd { 20 mA i Base peak current | | Pie Putere total disipat& (1) ! 300 mw | ‘Yotal power dissipation i | Ty Temperatura maxim’ a jonctiunii 150°C | Maximum junction temperature \ Ts Domeniul temperaturilor de stocare | —55++4150°C Storage temperature range (1) Terminalele menfinute pind la 2mm de capsula la Ty < 25°C At 2mm from the case the leads kept at T, < 25°C “5 — Catalog LP.RS. Banease vol. ULIP. RS. Oar BC 415, BC 416 , CARACTERISTICI TERMICE THERMAL CHARACTERISTICS ~ Raya Rezistenga termica joncivne-ambiant | max. 420 ecw | ! Junction-ambient thermal resistance | CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru + . joe | | Parameter /Min. Typ. Max.| Unit. ! i Timo Curent sezidual colector-bazi | | ] Collector-base cut-off current | | — Vex = 30 V | 15 | nA —Ixrxo Curent rezidual emitor-baza | i Emitter-base cut-off current 15, nA : — Vep= 4V | —Vexno Tensiune de strapungere colector-bazi : Collector-base breakdown voltage \ j —Ic=10 pA BC 415 45 v BC 416 | 50 v —Vanjxo Tensiune de stripungere colector- | ' emitor j ! Collector-emitter breakdown voltage ! (2) — Ie=10 mA BC 415 | 30 ‘ov BC 416 45 ; ov —Vinreso Tensiune de strapungere emitor-bazi i | Emitter-base breakdown voltage i —Te=10 pA 5 | vi —Versat Tensiunea de saturatie colector-emitor i | Collector-emitter saturation voltage | i —I¢=10 mA; — Ip 5 mA ! 300 mV ' — I, = 100 mA; — Ig mA | 600 mVBC 415, BC 416 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametru . las Min. Typ. Max. | . Parameter | in. Typ. Max. | Tnit | | — Vout; Tensiune de saturafie bazi-emitor | \ Base-emitter saturation voltage i —Ic=10mA;—Ip=05mA | 700 mV —Ie=100mA;—Ip=5 mA | 900 mV | hes Factor de amplificare in curent i \ continuu DC forward current transfer ratio — Ic =10 pA; — Ve =5 V gr A | 40 - gr. B | 100 - gr. C 100 — —-Ie=2 mA; — Ve=5 V ‘ gr. A | 120 220; — } gr. B | 180 460, — er. C | 380 800; — 1 he Factor de amplificare in curent alternativ AC forward current transfer ratio | — Ve=5 V; — Ie =2 mA; | | f=1 kHz gr A | 125 260) — gr. B | 240 500 | — gr. C | 450 900} ~ fr Frecvenfi de tranzitie ; ! Gain bandwidth product ; — Vee=5 V; — Ic = 10 mA; | 250 MHz f = 100 MHz i Ceso Capacitate colector-bazi i Collector-base capacitance i — Ve=10 V;i=1 MHz 25 pF xdBC 415, BC 416 CARACTERISTICI ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametru lage ro, Parameter Min. Typ. Max,| Unit, XF Factor de zgomot : ise figure Nois — Vor = 5 V; — Io = 200 wd; f = 30 Hz +15 kHz; Ry = ZkQ 2: 4B siune de zgomot la intrare ' ¢ voltage at transistor input | = 5 V5 — Ic = 200 pa; i ! ;f£=10 +50 Hz O11 | pV Ve [oy sus Vout PASS FILTER Ae 10-50 H2 Cireuit de test pentru: Vy ‘Test cireuit for: * Reactie negativ’ pentru emplificare de tensiune constanté Negative iecdLack for a constant voltage amplificationBC 516 TRANZISTOR (UV SILICIU PNP PLANAR EPITAXIAL DARLINGTON SILICON PNP EPITAXIAL PLANAR DARLINGTON TRANSISTORS: SW TOS2 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS 7 i 1 : — Vero Tensiune colector, bazi (—Ig = 0) | 40 Vv i Collector-base voltage | : — Vcxo Tensiune colector-emitor (—Ip = 0) | 30 Vv ! Collector-emitter voltage | | — Vino Tensiune emitor-bazi (—Te = 0) | 10 voi Enitter-base voltage | —k Curent de colector | 400 omA Collector current i Poot Putere total disipata (1) | 625 aw | Total power dissipation i : | \ Ty Temperatura maxima a joncfiunii | 150 | Maximum junction temperature t ! Ts Domeniul temperaturilor de stocare —55++150 °C Storage temperature range (1) Terminalele menfinute pind la 2mm de capsuli la Ty = 25°C At 2mm from the case leads kept at Ty = 25°CoP. RB. S. ® BC 516 BANEASA ABD CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Rusa —- Rezistenta termicd jonctiune-ambiant Junction-ambient thermal resistance max. 200 °C/W CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametra | ain. Typ. Max.| Unit. — Icpo Curent rezidual colector-baza Collector-base cut-off current —Ves = 30 V 100 | nA — Vsryeno Tensiune de strapungere colector-baza Collector-base breakdown voltage — Ie = 10 pA 40 — Vorycro Tensiune de stripungere colector- emitor | Collector-emitter breakdown voltage (2) —Ie =2 mA 30 v — Vepryrno Tensiune de strapungere emitor-baza Emitter-base breakdown voltage —Tg = 100 nA 10 iy | — Veo. Tensiune bazii-emitor i Base emitter voltage —Vee = 5 V; —Ie = 10 mA 4iv | — Vensat Tensiune de saturatie colector-emitor | Collector-emitter saturation voltage ' (2) Ic = 100 mA; —I,=0,1 mA 1| | (2) —Ic = 350 mA; —I, = 0,35 mA 2 asS L ‘ o] BAMBARA CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametru Parameter Min. Typ. Max. | Unit. | | i — bre Factor de amplificare in curent continuu i DC forward current transfer ratio ! | —Vee = 2 V; —Ie = 20 mA 30 000 Pe Collector-base capacitance Cexo Capacitate colector-baza \ | “Vey = 10 V; f=1 MHz 45 lor i fy Freeventa de tranzifie | | Ven =5 V; —Ie= 10 mA; ' 1 = 100 MHz 220 | MHz | t | | | Gain bandwidth product 2) 2 < 0,02; tp = 0,3 ms 71TRANZISTOR CU SILI EPITAXIAL DARLINGTON BILICON NPN EPITAXIAL PLANAR Ae DARLINGTON TRANSISTOR e U NPN PLANAR Lh PLR. S. & _BANHASA ® Storage temperature range TO92 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS : j Vono —‘Tensiune colector-baz4 (In = 40 Vv Collector-base voltage Voeeo ‘Tensiune colector-emitor (Ip = 0) | 30 v | Collector-emitter voltage i Vexo —‘Tensiune emitor-bazi (Ic = 0) 10 voy Emitter-base voltage | { Ic Curent de colector 400 mA | Collector current | i Pet Putere total disipata (1) | 625 mW | | Total power dissipation ! | ys emperatura maxitad a joncfiunii | «130 °C Maximum junction temperature | 1 os Domeniul temperaturilor de stocare +4150 °C | (1) Terminalele menfinute pind la 2mm de capsuli la Ty = 25°C At 2mm from the case the leads kept at Ty = 25°Ca P. R. 8. we BANEASA CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Reyna Rezistenfi termicd jonctiune-ambiant | I-A isten}a termics Joncfiune-a | max. 200 eC Junction-ambiert thermal resistance | | CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru . Parameter | Min. Typ. Max. i | | | ' | I i i Unit. | Topo Curent rezidual coiector-baza | i Collector-base cut-off current | Ves = 30 V 100; nA! Vinrjcno Tensiune de strapungere colector-baza i Collector-base breakdown voltage} i Te = 10 pA i 40 v Veercno Tensiune de stripungere colector- emitor i Collector-emitter breakdown voltage | (2) Ie=2 mA | 30 iy ! t ' Varepo ‘Tensiune de strépungere emitor-bazi | } Emitter-base breakdown voltage ! | : | I, = 100 nA 10 Vv Von Base-emitter rote | Vee =5 Vj Ie = 10 mA 14 ' I | | | Verat Tensiune de saturafie colector-emitor | ! | Collector-emitter saturation voltage ! | (2) Ie= 100 mA; Ip —0,1 mA | 1| (2) Ic = 350 mA; Ic = 0,35 mA 2 |__ BAWRASA »} CARACTERISTICi ELECTICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) i Parametru | Parameter Min. Typ. Max.| Unit. | i bee Factor de amplificare in curent continuu D.C. forward current transfer ratio Vee = 2 Vj Ic = 20 mA i i | | ; Ceso Capacitate colector-baza | t Collector-base capacitance | i | - i { 30 000 |- i vos = 10 V; f= 1 MHz fr Frecventa de tranzifie Gain bandwidth product Vee = 5 V; Ie = 10 mA; f= 100 MHz MHz (2) 2 2) 7 < 0,02; tp = 0,3 ms !fart FP. RS. BC 546, BC 547, BC 548 BANEASA BC 549, BC 550 TRANZISTOARE CU SILICIU NPN PLAN: EPITAXIALE CU ZGOMOT REDUS DE AUDIO-FRECVENTA SILICON NP EPITAXIAL PLANAR LOW NUISE AP TRANSISTOR _ Storage temperature range i j TO92 VALORI LIMITA ABSOLUTA BC 546 BC 547 BC 548 ABSOLUTE MAXIMUM RATINGS BC 550 BC 549 Veno —‘Tensiune colector-bazi (Iz = 0) 80V 50V 3s0v ! Collector-base voltage | Veo Tensiune colector-emitor (Iz = 0) ! 6 V 45V 30V Collector-emitter voltage j Veno — Tensiune emitor-bazi (Ip = 0) + 6V 6V 5V ! Emitter-base voltage { i Io Curent de colector | 100 mA | Collector current | t | lew Curent de colector de virf | 200 mA : | Collector peak current | i Tou Curent de bazi de virf 200 mA | Base peak current | | Pet Putere totali disipaté (1) \ 300 mW i | Total power dissipation | i Tye Temperatura maxima a jonc i 150°C Maximum junction temperature i Ts Domeniul temperaturilor de stocare | —55+-+-150°C ( 1) Terminalele menfinute pind la°2mm de capsulé Ja Ta < 25°C At 2mm from the case the leads kept at Ta < 25°CBC 546, BC 547, BC 548 BC 549, BC 550 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Riya Rezistenta termic& joncfiune-ambiant | max. 420 ocjw Junction-ambient thermal resistance i CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS i Farametru Min. Typ. Max.| Unit. Iczo Curent rezidual colector-baza | Collector-base cut-off current j | Ves = 30 V 15 | nA Ves = 30 V; Ta = 125°C 5 | pA Teno Curent rezidual emitor-baz& | Emitter-base cut-off current Ven = 4V 15 | nA Veeneso ‘Tensiune de stripungere colector-bazd Collector-base breakdown voltage | Te = 10 pA BC 546 | 80 v BC 547; BC 550 | 50 Vv BC 548; BC 549 | 30 v Vioxceo Tensiune de stripungere colector- emitor Collector-emitter breakdown voltage (2) Te =2 mA BC 546 | 65 v BC 547; BC 550 | 43 lv BC 548: BC 549 | 30 iv Vioryxso Tensiune de stripungere emitor-bazi | Emitter-base breakdown voltage Ic =1 pA BC 546 BC 547; BC 550 BC 548; BC 549 ADD <BC 546, BC 547, BC 548 BC 549, BC 550 CARACTERISTICI ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS (cont. ) Parametru a bee i Parameter Min. Typ. Max. Unit. Veuut Tensiune de saturafie colector-emitor | { { Collector-emitter saturation voltage \ | (2) Ic = 10 mA; Ip =0,5 mA 250 | may (2) Ic = 100 mA; Ip =5 mA | 600 | my Vast Tensiune de saturatie bazd-emitor : Base-emitter saturation voltage 1 (2) Ic = 10 mA; Ip =0,5 mA | 700 jamv (2) Ic = 100 mA; Ip=5 mA : 900 ! mv hee Factor de amplificare in curent i continuu i DC forward current transfer ratio | Toe =5V;le=l0 yA gr A 90 | - | gr. B 150 f- 4 gr. Cc 270 in Vee =5 V; Ie =2 mA gr. A | 110 2200;- } gr. B } 200 450 | — | gr. C | 420 800 | — Vee =5 V;Ie= 100 mA gr. A | 120 on gr. BY 200 i gr C | 400 i He Factor de amplificare in curent { i alternativ i | | 1 AC forward current transfer ratio I i Vee =5 V; Ie =2 mA; | ! | f = kHz gr A | 125 260 | - } ger. B | 240 500} — | i gr. C | 450 900 | ~ | f& Frecvenfa de tranzifie | i Gain bandwidth product \ Vee = 5 V; Ic = 10 mA; | | f = 100 MNz 130 | MHz |BC 546, BC 547, BC 548 BC 549, BC 550 a CARACTERISTICI ELECTRICE (T, = ELECTRICAL CHARACTERISTICS 25°C ) Yurameter Parametru Min. Typ. Max| Cczo y Capacitate colector-baza Collector-base capacitance Ven = 10 V; f= 1 MHz Crzo* Capacitate emitor-baza Emitter-base capacitance Vrs = 0,5 V; f=1 MHz NF Factor de zgomot Noise figure Vex = 5 V; Io = 200 pA; Ry =2 kQ Ves = 5 V; Ie = 200 pA; Ry = 2 kO A = 30...15.000 Bz Ver =5 Vi Te = 200°pA; R, =2kQ i= 10+50 Hz 1 kHz; BC 547; = 200 Hz BC 549; Tensiune de 2gomot Ja intrare Noise voltage at transistor input BC 548 BC 550 % BC 549 BC 550. BC 550 3 | 10 ES 0,135 pF pF dB dB dB dB Vv 7" << 0,02; tp = 0,3msBC 556, BC 557, BC 558 BC 559, BC 560 TRANZISTOARE CU SILICIU PRP PLANAR SPITAXIALE CU ZGOMOT REDUS DE AUDLOFRECVENTA SILICON PNP EPITAXIAL PLANAR LOW NOISE AF TRANSISTORS Ke TO92 VALORI LIMITA ABSOLUTA BC556 BC557 BC 558 ABSOLUTE MAXIMUM RATINGS BC 560 BC559 —Veno ‘Tensiune colector-bazi (Ie =0) |80V 50¥ 30V Collector-base voltage —Veeo Tensiune colector-emitor (Is =0) |65V 45 V 30V Collector-emitter voltage | — Veno ‘Tensiune emitor-bazi (—I, = 0) | 5V | Emitter-base voltage | — Ie Curent de colector | 100 mA Collector current — Tet Curent de colector de virf 200 mA ! Collector peak current i — Inu Curent de baz4 de virf 200 mA ' Base peak current | Poe Putere totala disipata (1) 300 mw { Total power dissipation {Tye Temperatura maxima a joncfiunii 150 °C | Maximum junction temperature Domeniul temperaturilor de stocare —55++150 °C Storage temperature range | (1) Terminalele mentinute pind la 2 mm de capsuli la Ta < 25°C At 2mm from the case the leods kept at Ta < 25°C 9BC 556, BC 557, BC 558 BC 559, BC 560 C THE RACPERISTICL TER MICE RMAL CHARACTERISTICS Raya CARACTERISTICI ELECTRICE (7, ELECTRICAL CHARACTERISTICS Parametru n | : Parameter Min. Typ. Max.| Unit. | '— Tego Curent rezidual colector-bazi | | j ' Colfector-base cut-off current | ! i Vo = 30V i 15}na | | —Ven = 30V; Ty = 125°C i 5 PRA | | —Iyso Curent rezidual emitor-bazd | i Emitter-base cut-off current | } —Vis =4V 15 | nA | — Vasxczo Tensiune de strapungere colector-baza | ! Collector-base breakdown voltage | \ Ie = 10 pA BC 556 | 80 iv i BC 557; BC 560 | 50 Vv ! BC 558; BC 559 | 30 |v | _ Vinnero Tensiune de stripungere colector- I i emitor | Collector-emitter breakdown voltage { —Ic = 2mA BC 556 | 65 lv i (2) BC 557; BC 560 | 45 Vv i BC 558; BC 559 | 30 |v | — Visr,.so Tensiune de strapungere emitor-bazi | i; Emitter-base breakdown voltage i —Ip=1pA 5 iv | — Vers Tensiune de saturatie colector-emitor : | Collector-emitter saturation voltage j | | —Ic = 10mA; —Ip = 0,5mA 300 | mV i —Ic = 100 mA; —Iz =5 mA | 650 | mvHi P. B.S. BC 556, BC 557, BC 558 @ BANEASA BC 559, BC 560 CARACTERISTICE ELECTRICE (T, = 25°C) ELECERICAL CHARACTERISTICS Parametru . Parameter | Min. Type — Vorat Tensiune de saturatie bazi-emitor | -emitter saturation voltage ! A : (2) -Ie = 10 mA; —Ip = 0,5 mA i 730 imv | | @) Ie = 100 mA; —Ip = 5 a i 1100 pm¥ | bss Facter de amplificare in curent | continua 1 DC forward current trausfer ratio \ : Ven =5V; —Ie=l0pA gr A | go Ia, gr. BS 150 pt er. C 27 Po —Ve; =5V; —Ie=2mA gr. A | 110 220) gt. B | 200 450! — gr. C | 420 800) — Ven = 5 V3; —Ie = 100 mA i i ge A! 120 p-G g. Bj 200 ee ere Cj 400 - | hee Factor de amplificare in curent alternativ H AC forward current transfer ratio ! — Ve 5V; —Ip=2 mA; t i f=1kEz gr A | 125 260) = gr. B | 240 500! — | gr. C | 450 90 — | fy Frecventa de tranzifie | i Gain bandwidth product : —Vae=5V;—k=10mA; | i : f= 100 MHz : 150 ’ MHz i Cczo Capacitate colector-bazi : i Coliector-base capacitance i — Vee = 10 V; f= 1 MHz | 6lpr 6 ~ Catalog LP.2-S. Baneasa vol. 11t aBC 556, BC 557, BC 558 I. Pp. BR. 8. BC 559, BC 560 “BANEASA rs CARACTERISTICI ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS (cont. ) Parametru |atin. Typ. Mas. Unit. 1 Parameter NF Factor de zgomot Noise figure =5 V; — Ic = 200 uA; | i ' i Re = 2 kO BC 556 10 | dB kHz; Af = 200 Hz BC 557 10 | 4B BC 558 10 | dB BC 559 4| dB | BC 560 4/ 4B =5.V; — Ie = 200 wA; | i ko BC 859 4| aB | 0... 15000 Hz BC 560 2| 4B | Va Tensiune de zgomot la intrare | Noise voltage at transistor input | — Veg =5'V; — Te =200 uA; | | i Ry =2 kQ BC 560 0,11) pV | f = 10+50 Hz | (2) tp/T < 0,02; tp = 0,3ms 82TRANZISTOARE CU SILICIU NPN PLANAB 200 °C j Maximum junction temperature | Ts Domeniul temperaturii de stocare Storage temperature range Eira Xia SILICON NPN EPITAXIAL PLANAR ‘TRANSISTORS: £ zB ie TOS VALORI LIMITA ABSCLUTA ABSOLUTE MAXIMUM RATINGS BCY 58 BCY 59 i i Veno Tensiune colector-baza (Iz = 0) | 32V. 0 45 Collector-base voltage i Vexo Tensiune colector-emitor (Ip = 0) { 32V 45V Collector-emitter voltage | Veso Tensiune emitor-bazi (Ic = 0) | iv Emitter-base voltage : | Te Curent de colector ' 200 mA | Collector current Tp Curent de bazd | 50 mA | Base current | on Putere totalé disipaté (Te < 45°C) | lw Total power dissipation | Type Temperatura maxim& a joncfiunii | | i | | | |BCY 58, BCY 59 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Raya Ruy-¢ Rezistenta termic4 joncfiune-ambiant Junction-ambient thermal resistance Rezistenfa termicd jonctiune-capsula Junction-case thermal resistance i | U max. 450 °C/W max. 150 °C/W CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru Parameter Min. Typ. Max.| Unit. Tens Torx Tzs0 Voerjceo Veaneeo Curent rezidual colector-emitor Collector-emitter cut-off current Vee = 32 V;Vez=0; BCY 58 T, = 150°C BCY 58 ; Vaz = 0 BCY 59 | ; Ta = 150°C BCY 59 Curent rezidual colector-emitor Collector-emitter cut-off current on = 32 V; Vaz = 0,2 V; Ta = 100°C BCY 58 Ven = 45 V; Vaz = 0,2 V; Ta = 100°C BCY 59 Curent rezidual emitor-bazi Emitter-base cut-off current Ves =5 V Tensiune de stripungere colector- | emitor Collector-emitter breakdown voltage | Ig =2 mA BCY 58 BCY 59 ‘Tensiune de stripungere emitor-bazi Emitter-base breakdown voltage In=1 pA | 10 | nA 10 | pA 10 | nA 10 | A i | 20 uA 20 | pA oj na | ' 32 | v 45 |v , lv cryTAY BR Wi winnaca CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS BCY 58, BCY 59 (cont.) ; : Parametn Min. Typ. Max. Unit. i ; Verrsat Tensiune de saturatie colector-emitor ' ' Collector-emitter saturation voltage (1) Ic = 10 mA; Ip = 0,25 mA 0,35 | V Voesat Tensiune de saturatie bazi-emitor | Base-emitter saturation voltage | (1) Ic = 10 mA; Ip = 0,25 mA 0,6 0,85| V (1) Ic = 100 mA; Ip = 2,5 mA 0,75 12 /V Vera Tensiune bazd-emitor j Base-emitter voltage | Ip =2 mA; Vex =5 V 0,55 07 | Vv hee Factor de amplificare in curent | continuu DC forward current transfer ratio | Ic =10 pA; Vee =5V_ gr. VIL 78 {- gr. VIII | 20 1 — gr. IX 40 - gr X 100 - Ig=2 mA; Ve=5V_ gr. VIL 120 220 | — gr. VIII | 180 340 | — gt. IX 250 460 | — gr X 380 630 | — Ig =10 mA; Ves==1V_ gr. VIL 80 - gr. VIII | 120 400 | — gr. IX 160 630 | — gr. xX ; 240 1000 | — Ic = 100 mA; Veg=1V_ gr. VII 40 [- gr. VII | 45 i gr. IX 60 — gr X 60 ~BCY 58, BCY 59 CARACTERISTICI ELECTRICE (T; =[25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametru \ ai Typ. 4 | Uni | Parameter in. Typ. Max.) Unit. | i fr Frecventa de tranzitie | ' Gain bandwidth product | | von = 5 V; Ig = 10 mA; } 1 f = 100 MHz | 125 | MHz i i Ceno Capacitate colector-baza | Collector-base capacitance ! Ves = 10 V; £=1 MHz 6 | pF | Ceso Capacitate emitor-bazi | | Emitter-base capacitance | Vey = 0,5V; f = kHz 15 | pF t NF Factor de zgomot i Noise figure | Vex = 5 Vi; Ie = 200 pA; Rg=2k0Q; f= 1 kHz; Af = 200 Hz 6 i dB i i ton Timp de comutatie directa i t Turn-on time i | QQ) Ic=10 mA; Ip =—In=1mA | 150 | ns i (2) Ic = 100 mA; Ip = —Ipe = 10 mA! 150 | ns tert Timp de comutatie invers’ ' | Turn off time ! (2) Ic=10 mA | 800 | ns (2) | S00 ns (2) Vezi circuitul de masuri See test circuit(aN i Po R I BANEASA BCY 58, BCY 59 CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS i Parametra | Min. Typ. Max. Unit. | I i | | Configuratie in emitor-comun \ | ' : 4 i ; | I Common emitter configuration : | Vee = 5 V3 Ig = 2mA; | | f£=1 kHz | | | | | Boe Conductanta de iesire | i | Open circuit output conductance | gr. VII 30 | pS | gt. VIII | 50) uS | i gr. IX 60 | pS gr X 10 | us hye Factor de amplificare in curent alternativ AC forward current transfer ratio f=1 kHz gr. VIL | 125 250 | — gr. vt | 175 350 | — gr. IX | 250 500 | ~ er. X 350 700 | — Circuit de m&suri pentru ton, toff Test circuit for a) Io:Ipy: — Ip, & 10:1: 1mA kQ, 9900 b) I Tp, © 100: 10: 10 mA R, = 500 0, Ry = 700 2: Ry = 980 87BCY 69 TRANZISTOARE CU SILICIU NPN PLANAR EPITAXIALR SILICON NPN EPITAXIAL PLANAR TRANSISTORS Ip. B.S. AX BANEASA Wi Storage temperature range TOs VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS 1 j i Veuo ‘Lensiune colector-bazi (Iz = 0) i 20 v i Collector-base voltage | Vero Tensiune colector-emitor (Ip = 0) : 20 v | Collector-emitter voltage | Veso Tensiune emitor-bazd (Ic = 0) 1 5 y | Emitter-base voltage | \ | Te Curent de colector ; 200 A | Collector current : | Ip Curent de bazi : 50 ' Base current i Pet Putere total disipata (Ta < 25°C) | 0,3 woot | Total power dissipation (To < 25°C) | 1 w | | Tye Temperatura maxima a joncyiunti | 269 | Maximum junction temperature ! | Ts Demeniul temperaturilor de stocareBANEASA iy IPRS. & BCY 69 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Ruyy-s Rezistenja termici jonctiune-ambiant | max, 450 ecw Junction-ambient thermal resistance | “a | Raye Rezistenta termici jonctiune-capsula | max. 150 CTW t . Junction-case thermal resistance CARACTERISTICL ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS > parametru Min. Typ. Max.) Unit. ! | Icao Curent rezidual colector-bazi ! | Collector-base cut-off current ! i Vos = 20 V ; 15 | nA Ves = 20V; Ta = 150°C 15 | pA \ Taupo Curent rezidual emitor-baza | | Emitter-base cut-off current | Vis =3V 1] pA ! Vinryezo ‘Tensiune de stripungere colector- : | emitor { { Collector-emitter breakdown voltage Io =2mA 20 v i Vioxyeso Tensiune de strapungere emitor-baza | Enmitter-base breakdown voltage | i | I; =1pA 5 iv Versat Tensiune de saturatie colector-emitor : Collector-emitter saturation voltage | i (1) Ie =J0mA; Ip = 0,5 mA 0,25 | V (1) Ic = 100 mA; Ip =5mA 05 |vBCY 69 CARACTERISTICI ELECTRICE (T, = ELECTRICAL CHARACTERISTICS Parametru Parameter be P. R. S. BANEASA B 25°C) Min. Typ. Max.! Uni Voron bre fr Cono tp 2 < 0,02 Q) ye < 0.02; Tensiune bazi-emitor Base-emitter voltage Io =2mA; Ver =5V Factor de amplificare in curent continuu DC forward current transfer ratio Vee = 5 Vv: Ig = 10 mA Frecventa de tranzitie Gain bandwidth product Ver = 5V; Io = 10 mA; f = 100 MHz Capacitate colector-baza Collector-base capacitance Vee = 10 V; f = 1 MHz Factor de zgomot Noise figure 2kO; f=1kHz; ‘Af = 200 Hz 0,7 | Vv MHz (cont. ) iTWO PORT CHARACTERISTICS CARACTERISTICI DE CUADRUPOL Parametru Parameter Min. Typ. Max.) Unit. | hie Bee hee Configuratie in emitor comun Common emitter configuration Vee = 5V; Ig =2mA; f =1kHz Rezistenfa de intrare Short circuit input resistance Factor de atenuare a tensiunii | | | 8 15 | kQ | | | Open circuit reverse voltage transfer ratio Conductanta de iesire Open circuit output conductance Factor de amplificare in curent alternativ i i AC forward current transfer ratio | 1250 == Ig Imay Cistigul static in curent DC current gainTRANZISTOARE CU SILICIU PNP PLANAR EPITAXIALE SILICON PNP EPITANIAL-PLANAR STORS FRANSISTO! BCY 78, BCY 79 VALORI LIMITA ABSOLUTA SOLUTE MAXIMUM RATINGS — Vous — Veeo — Veno Prot Ty Ts Tensiune colector-emitor (—Vpr = 0) Collector-emitter voltage Tensiune colector-emitor (—Ip = 0) Collector-emitter voltage Tensiune emitor-baz4 (—I, = 0) Emitter-base voltage Curent de colector Collector current Curent de bazi Base current Putere total disipatd (‘te < 45°C) ‘Lotai power dissipation Temperatura maxim’ a joncfiunii Maximum junction temperature Domeniul temperaturilor de Storage temperature range 200 mA 20 mA LW 200°C = 65-24 200°CSI. P. RS. +) aeK BCY 78, BCY 79 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Ruy-a —_ Rezistenfa termic& joncfiunc-ambiant | max. 450 ‘C/W Junction-ambient thermal resistance Rus-c Rezistenta termic& joncfiune-capsuli max. 150 °C/W Junction-case thermal resistance CARACTERISTICI' ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS | — Varno Tensiune de strapungere emitor-bazi_ | \ Emitter-base breakdown voltage —In=1pA ' ' — Vert Tensiune de saturatie colector-emitor Collector-emitter saturation voltage : (1) —Ig = 10 mA; —Ip = 0,25 m \ qd) Te = 100 mA; Ip = 2,5 mA Parametru | Parameter be i 1 1 { — Ices Curent rezidual colector-emitor | ! i Collector-emitter cut-off current | ! ' = BCY 78; 100 nA | 50°C BCY 78 | yA | | 0 BCY 79; 100; pA | | ‘4 = 150°C BCY 79 | 10 | wa | Inno Curent rezidual emitor-bazi | ' | Emitter-base cut-off current : | i Vin =4V ' 20, 0A | ~Veameno Tensiume de strapungere colector- | \ emitor . i | i Collector-emitter breakdown voltage | i : —Ie =2mA BCY 78 i 32 Vv i i BCY 79! 45 ly \ | t | | \ | 1 |LER Spy BCY 78, BCY 79 BANBAS. ‘® CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont. ) P | Mi i Parameter Min. Typ. Max.| Unit. — Vaewt Tensiune de saturatie baza-emitor Base-emitter saturation voltage (Q) Ie = 10 mA; —Iy = 0,25 mA 0,85 | V Q@) —Ie = 100 mA; —Ip =2,5mA 12 |v | — Vpeon Tensiune baza-emitor Base-emitter voltage —Vee = 5. VV; —Io = 2 mA 0,55 07 |v her Factor de amplificare in curent continuu DC forward current transfer ratio —Te = 10"A; —Vex = 5V gr. VIL 78 - gt. VIII 20 - i gr. IX 40 - | gr. xX 100 - —Ig =2mA; —Vee =5V gr. VII 120 220 | — gr. VIII | 180 340 | — gr. IX 250 460 | — gr. X 380 630 | — —Ip=10 mA; —Vee=1V gt. VIE. | 80 - gr. VIIT | 120 400 | — gr. IX 160 630 | — gr. X 240 1000 Ic = 100 mA; —Vex =1V | gr. vir. | 40 - | gr. VIL | 45 - | gr. IX 60 IH gr. Xx 60 i tp a) r < 0,02; tp =0,3 ms 4i BANEASA BCY 78, BCY 79 CARACTERISTICI ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS (cont. } fy Copo Cuno ton BS 2, tott (2) 2) Parametru Parameter Frecventa de tranzitie Gain-bandwidth product —Ic = 10 mA; —Vegp=5V; = 100 MHz Capacitate colector-baz4 Collector-base capacitance —Ven = 10V; f= 1 MHz Capacitate emitor-baza Emitter-base capacitance —Ven = 0,5V; f= 1MHz Factor de 2gomot Noise figure Ic = 0,2 mA; =1kHz; R, Timp de comutatie directa Turn-on time Ie = 10 mA; —Im = In: = 1 mA —Ic = 100 mA ; —Ip; = Ine = 10 mA | Timp de comutafie inversi Turn-off time —Ic = 10 mA; Ic = 100 ma; x Unit. | | MHz pF | pF | dB ns 2) Vezi circuitul de misuri See test circuitIP. B.S. BANBASA CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS r Parametru 7 Vn Toa Parameter | Min. Typ. Max., Unit. Configurafia emitor comun | Common emitter configuration Vi -Ie=2mA; i i | i i Me Factor de amplificare in curent | alternativ \ AC forward current transfer ratio gr. VIL. | 125 2 | gr. VII | 175 3 gr. IX 5 | gr. X | 350 I | Moe Conductanta de iesire Open circuit output conductance | gr. VI 30 gr. VIII 50 gr. IX 60 gr X 60 2} Circuit de masur& pentru ton, toff Test circuit for Ry = 980, Vaz =5VLP. B.S. BF 258, BF 259 BF 257, BF 257E AASTOARE CU SIMIC NPY PLANAR ALE DE INGLTA TEASIUNE, TANIAL-PLANAB HIGH ORs T0393 VALORI LIMITA ABSOLUTA BF BF BF BE ABSOLUTE MAXIMUM RATINGS ase 259 IGOV 2604 250V 800V) 7 | Vero Tensiune colector-bazi (Ip == 0) | Collector-base voltage i | Veew Tensiune colector-emitor (Ip => 0) 1GOV 200V 250V SoOVt Collector-emitter voltage | | Vuno — Leusiune emitor-bazi (Fe == 0) 5Y | Emitter-base voltage | | | | Te Curent de colector 100 mA i | Collector current i \ } Ps Putere total disipata (Te < 25°C) | aw i i ‘Total power dissipation i { i I ory ‘Temperatura maxima a joncfiunii | 175C | Maximum junction temperature ! t | i Ts Tomeniul temperaturilor de stocare | Storage temperature + | 7 —Catsing LP.RS. Binasa vol. 11 oBF 257, BF 257E BF 258, BF 259 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS 1. P RS. py we BANEASA Rac Rezistenfa termica jonctiune-capsula Junction-case thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS man. 30° C/W Parametru Parameter T | Min. Typ. Max.) Unit. | r i { { i | ' | { i | | ! { 1 | { i i \ \ i | | Tcso Viuryeno Vericro Curent rezidual colector-baza Collector-base cut-off current Vee = 100 V BF 257 BF 257E BF 258 BF 259 Tensiune de stripungere colector-bazi Collector-base breakdown voltage Tc = 100 pA BF 257 BF 257 E BF 258 BF 259 ‘Tensiune de strapungere colector- emitor Collector-emitter breakdown voltage Te == 10 mA BF 257 BF 257 E 8 Tensiune de strapungere emitor-bazi Emitter-base breakdown voltage Ty; == 100 pA 160 210 250 160 210 250 + 300 50 50 50 60 Total power dissiipatd Ray—a Fark radiator (Without heat sink) Ryy—c Cu radiator infinit 0 Puterea total dispation (With infinite heat sink)BF 257, BF 257E BF 258, BF 259 Veg IV) Vel V! Caracteristict de iegire Outpat characteristizsToAPE CU LE bE ME SUEAC OX NPN EFITANL AND i(ful CETAGL 4 £ BC VALOR LEGHPA ABSOLUTA ABSOLUTE MAXIMUM RATINGS TOSs2 BF BF BF 297 298 299 | Ven Tensiune colector-bazd (Iz = 0) : Collector-base voltage 5 Vaw Tensiune colector-emitor (Ip = 0) | Collector-emitter voltage | Vevo Tensiune emitor-bazi (Ic = 0) Emitter-base voltage Ic Curent de colector Collector current Poot Putere totali disipata (1) Total power di i Tx ‘Temperatura maxima a joncfiunii Maximum junction temperature Ts Domeniul temperaturilor de stecare Storage temperature range GOV 250V 200 V i , 160V 250V 300 V i ! | i sv 100 mA 625 mW 150°C —55-+150°C (1) Terminalcle menfinute pind la 2mm de capsulé la T, < 25°C At 2mm from the case the leads kept at T, < 25°C 301LPR S. gy BANEASA WS BF 297, BF 298, BF 299 CARACTERISTICI TERMICE THERMAL JCHARACTERISTICS Ruy-a _ Rezistentd termicd joncfiune-ambiant | Junction-ambieut thermal resistance | max. 200 °C/W CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru Min. Typ. Max.| Unit. Teno Curent rezidual colector-bazd Collector-base cut-off current Ven = 100 V BF 297 50 | nA Ves = 200 V BE 298 50 | nA Vos = 250 BF 299 50 | nA Timo Curent rezidual emitor-bazi | Emitter-base cut-off current : Ven = 3V _ 50, nA Viuryeno" Tensiune de stripungere colector-bazi : Collector-base breakdown voltage { Tc = 100 pA BF 297 160 ;v BF 298 | 250 v BF 299 | 300 v ' Visriczo Tensiune de stripwigere colector- i : emitor i Collector-emitter breakdown voltage | (2) Ie =10mA BF 297 160 iv BF 298 250 v BF 299 300 v Visryeso Tensiune de strapungere emitor-baza Emitter-base breakdown voltage Tg = 100 pA 5 lvGaQr PRS Bo ivcase BF 297, BF 298, BF 299 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametru T Parameter Min. Typ. Max.| Unit. ; i Versat Tensiune de saturafie colector-emitor | Collector-emitter saturation voltage (2) Te=30mA; Ip=6mA i 1 | | Varsat Tensiune de saturatie baza-emitor | le Base-emitter saturation voltage | . (2) “Te=80mA; Ip=6mA ' | i i frp Factor de amplificare in curent continuu, DC forward current transfer ratio Ver = 10 V; Io = 30 mA fy Frecvenja de tranzitie | Gain bandwidth product | Ven = 10V; Ic = 10 mA, | f= 20MHz 90 | Miz Cero Capacitate colector-baza Collector-base capacitance Von = 30V; f= 1 MHz a wr me (2) tp . 2) F< 002; tye 0.3 ms 103BF 420 A, BF 422 A TRANZISTOARE CC STLICIU NPN PLASMA EPITANIALE LITERA A SPECIFICA FAPTUL CA TRANZISTOARELE IPRS AU CONPIGURATIA TEKMINALELOR BDC (ON NPN EPITAXIAL PLANAR, iSISTORS, ‘THE FACT THAT IPRs BBC LEAD VALORI LIMITA ABSOLUTA I... Pp. R..S. AY mawnnsa WR ABSOLUTE MAXIMUM RATINGS BF 20A BF 422A Veso Tensiune colector-baz4 (I); = 0) | 300 V 250 V i Collector-base voltage | | Vago Tensiune colector-emitor (lp = 0) - 2350 V i Collector-emitter voltage | Voug ‘Tensinne colector-emitor (Raw=2,7 kQ) | 300 V - i Collector-emitter voltage | + ¥eno ‘ensiune emitor-baz (Ie = 0) 5V Emitter-base voltage Io Curent de colector 25 mA Collector current Tow Curent dee or de virf 100 mA Collector peok current Pye Putere totala disipata (1) 830 mW “Total power dissipation i | Ty Temperatura inaxim& a joncfiunii 150°C ! Maximum junction temperature | Ts Domeniul temperaturilor de stocare +150°C Storage temperature range lipit pe cablaj pe o suprafati de ricire de arie minim& 10 mm x 10 mm. 1) Aceste valori sint valabile daca terminalul de colector, avind o lungime de max. 3 mm, este ‘These values apply if the collector lead, whose length will be less than 3 mm, is soldered on 1 copper cooling area of at least 10mm x 10 mm. 104GaN PRS. Wad BANEASA CARACTERISTICL TERMICE THERMAL CHARACTERISTICS BF 420 A, BF 422 A Ruy-a _Rezistenfa termicd joncfiune-ambiant | Junction-ambient thermal resistance | CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru Parameter 7 Tcxo Curent rezidual colector-baza | Collector-base cut-off current ' Ven = 200 V | Verso Tensiune de stripungere emitor-bazi | Emitter-base breakdown voltage | In = 10pA Vesycso Tensiune de strapungere colector-bazi Collector-base breakdown voltage Tc = 10 pA BF 420A BF 4224 emitor Collector-emitter breakdown voltage i Ig =1mA BE 4224 1 | i | Vismero ‘Tensiune de stripungere colector- Viprycer Tensitne de stripungere colector- | emitor Collector-emitter breakdown voltage | Te = 1 yA; Rog =2,7kQ BF 420A; hips Factor de amplificare in curent : continuu i DC forward current transfer ratio | Ven = 20V; Ie = 25mA BF 420A BF 422A | on 25 & 40 50 Min. Typ. Max.| Uni <<a 422 - LP. RB. S. F% BF 420 A, BF 422 A vacnen CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parammetru | Min. Typ. Max. Unit. i | | ' Cre Capacitate de reactie | Feedback capacitance Ves = 30V; Ie = 0; f = 1 MHz fr Frecvenfa de tranzifie Gain brandwidth product 10V; Ic = 10 mA; | | 16 | pF 1 | MHz | Veeatue ‘Tensiune de saturatie colector-emitor de radiofrecventa Collector saturation RF voltage | Ic = 25 mA; Ty = 150°C 20 | Vv 106LPRS. Os BF 421 A, BF 423 A TRANZISTOARE CU SILICIU PNP PLANAR EPITAXIALE LITERA A. SPECIFICA FAPTUL CA TRANZISTOARELE IPRS AU CONFIGURATIA TERMINALELOR EBC. SILICON. PNP. EPITAXIAL PLANAR] ATMANSIST LETTER A PECFIES Tue Pac THAT eit ‘TRANSISTORS WAVE EBC LEAD CONFIGURATION TOI2 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS BF 421A BF 423A * V&s Tensiune colector-bazd (—In = 0) 300V-250v—COS Collector-base voltage | — Vceo Tensiune,colector-emitor (—I_ = 0) i _ 250 V } Collector-emitter voltage : i — Veer Tensiune colector-emitor (Raz=2.7kQ) | 300 V - i Collector-emitter voltage | | — Vago Tensiune emitor-bazi (—Ic = 0) 5V | Emitter-base voltage i —Ic Curent de colector 25 mA i Collector current ! — Ica Curent de colector de virf 100 mA i Collector peak current : Prot Putere totala disipata (1) 830 mW i Total power dissipation j Ty, Temperatura maxima a joncfiunii 150°C | Maximum junction temperature Ts Domeniul temperaturilor de stocare —65-++150°C 1 Storage temperature range j (1) Valoarea aceasta este valabilé daci terminalul de colector, avind Iungimea de max. 3mm, este lipit pe cablaj pe o suprafafa de racire de are minima 10 min x 10 mm. This value applies if the collector lead, whose leagth will be less than 3 mm, is soldered on a cooper cooling area of at least 10mm x 10 mun.CARACTERISTICI ELECTRICE (T, = 25°C) SCTRICAL CHARACTERISTICS enta termica jone?! biant ‘tion-ainbient the: Parametru Parameter Unit. — Vearyeso | — Venrjeno ! | = Vepricro { \ ! — Vosrcer brs rezidual colector-baza -base cut-off current 06 -V Tensiune de st Enitter-baze = 10 pA Tensiune de stripungere colector-baz& Collector-base breakdown voltage Te = 10 pA BF 421A BF 4234 ‘Tensimme de stripungere colector- emitor Collector-emitter breakdown voltage —Ie = 1 mA BF 423A Tensiune de strapungere colector- emitor Collector-emitter breakdown voltage —Ie= 1 eA; Rog = 2,7 kQ BF 421A Factor de amplificare in curent continuu DC forward current transfer ratio Vee = 20V; Ic = 25 mA BF 4214 BF 423A pungere emitor-baza ptreakdown voltage 250 Ss nA Vv Vv Vv VvBF 421 A, BF 423 A CARACTERISTICL ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS (eont.) i _ Parametru Ves oe Parameter Min. T Nie i ( | . 16 pr | poh i | \ 1 60 | Mis | Veron Tenisiune de colector-emitor | | i : 2 radiofrecvent i : : : ! | j —Ic = 25 mA; Ty = 150°C j 207 109BF 457, BF 457E BF 458, BF 459 TRANZISTOAKE CU SILICTE NPN PLANAR EPITAXIALE DE ENALTA TENSIUNE SILICON EPITAXIAL PLANAR JNGI ‘VOLTA GI ISTORS VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS I Veno _—_Tensiune colector-baza Collector-base voltage Vero Tensiune colector-emitor Collector-emitter voltage Vzzo Tensiune emitor-baza Emitter-base voltage Tow Curent de colector de virf Collector peak current Prot Putere total disipati (T, < Total power dissipation Te Temperatura maxima a jonctiunii Maximum junction temperature Ts Domeniul temperaturilor de stocare Storage temperature range LPR. 3% _ BANEASA ® TOI26 BF BF BF BF 457 457E 458 4597 7 160V 210V 250V 300V 160V 210V 250V 300V| 5 Vv 100 mA 1,2 W 150 °C | —55++150 °C ae@: PRS. BF 457, BF 457E BANEASA BF 458 BF 459° CARACTERISTICI TERMICE THERMAL CHARACTERISTICS { : . | Rey-¢ — Rezistenfa termicd joncfiune-capsuli max. 10 ecw | i Junction-case thermal resistance CARACTERISTICI ELECTRICE (T, < 25°C) ELECTRICAL CHARACTERISTICS jl Parametru | age Po ! Pararmetee Min. Typ. Max,| Tnit. | ' | | Teso Curent rezidual colector-bazi ' Collector-base cut-off current | Ven = 100 V BF 457, BF 457 E 50 | nA Veo = 200 V BF 458 30 | nA \ Vea = 250 V BF 459 50 | nA Visnycwo ‘Tensiune de strapungere colector-bazi : ' Collector-base breakdown voltage i i Ig = 100 pA BF 457 | 160 |v BF 457 E, 210 uv BF 458 250 iv | BF 459 300 iv \ Viszjceo ‘Tensiune de strapungere colector- i | emitor | Collector-emitter breakdown voltage ' (1) Te = 10 mA BF 457 160 Ly BF 457, E 210 iv | BF 458 250 v | . BF 459 300 | Vv | Veayeso Tensiune de stripungere emitor-baz& | | Emitter-base breakdown voltage | | Tz = 100 pA 5 lv i (1) tp/T < 0.02; tp = 0,3 ms intBF 457, BF 457E BF 458, BF 459 Lp. RS. BANEASA CARACTERISTICI ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS (cont.) i Parametru ew ont i Parameter Iain. Typ. Max, Unit. Vers ‘Tensiune de saturatie colector-cmitor | { Collector saturation voltage : Ie = 30 mA, Ig =6 mA | liv I | i i 1 | hr, Factor de amplificare in curent continuu DC forward current transfer ratio Vo; =10V, Ic = 30 mA, f = 25 MHz 25 i= i fr Frecvenfa de tranzitie i Gain bandwidth product : Vex = 10 V, Ic = 15 mA, | f= 25 MHz 50 MHz Ceno Capacitate colector-bazi Collector-base capacitance Vee = 30 V, f = 1 MHz 5,5 A Pot Yee (Ww) | | 8 y60v: 250V) Vee = 300V 4 2 R Puterea total’ disipata ths JA ‘Total power dissipation radiator (without heat 0 0 10 20 R — Ty Te PO) a sink). radiator iniinit (with infinite heat v2©) THANZISTOARE CU SELIC EPITANIALE DE INALTA TI ‘ON NPN BPITAXIAL-PLANAM VOLTAGE TRANSISTORS I PLR. Ss. BANEASA BF 469, BF 47% TOG VALONI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS BF 469 BF 471 Vevo ‘Tensiune cclector-bazi (I: = 0) | 250V =300V Collectcr-base voltage Vero Tensivne colector-emitor (Ip = 0) 250 V — i Collector-emitter voltage | | | Veer ‘Tensiune colector-emitor (Rex =2,7 kQ) | — 30V | | Collec:or-emitter voltage | v, Tensiune cmitor-bazi (Ic = 0) 5v \ Lmitter-base voltage i Te Curent de colector | 30 mA \ Collector current i Tex Curent de colector de virf 100 mA i Collector peak current | Pyotr - Putere total& disipata (Tc < 110°C) | Total power dissipation i i Tyr ‘Temperatura maxim& a jonctiunii | 150°C | | Maximum junction temperature i j Ts Domeniul temperaturilor de stocere | i Storage temperature range | 5. Baneasa vol Il] nsI. P. R. Ss. <8 BF 469, BF 471 paneass We CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Ruy-a _ Rezistenfa termicdjoncfiume-ambiant | max. 100 °C/W (1) Junction-ambient thermal resistance Rey-c Rezistenta termicd jonctiune-capsula | max. 20 °C/W } Junction-case thermal resistance | (1) Valoarea aceasta este valabil& dac4 terminalul de colector este lipit pe cablaj pe o suprafafs de ricire de arie minima 10mm x 10 mm. This value applies if the collector lead is soldered on a copper cooling area of at least 10mm x 10mm. CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru . 4 Parameter | atin. Typ. Max. Unit. | | oso Curent rezidual colector-baza } Collector-base cut-off current ! Ves = 200 V 10 | nA | Tgpo Curent rezidual emitor-bazai | | Emitter-base cut-off current Ves = 5 V | Visrjcso = Tensiune de strapungere colector-baza Collector-base breakdown voltage } Io = 10 pA BF 469 | 250 Lv BF 471 | 300 i | | Visajceo Tensiune de strapungere colector- t emitor | Collector-emitter breakdown voltage | Ip =1 mA BF 469 | 250 | li® LPR S. (A BANEASA CARACTERISTICI ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS (cont.) BF 469, BF 471 Min. Typ. Max.) Unit. Parametru | Parameter i | Vosrcer Tensiune de strapungere colector- i emitor ' Collector-emitter breakdown voltage i Io=1 pA; Rez = 2,7 kQ ' | ! | | | i | | BF 471 | 300 | Vv hrs Factor de amplificare in curent | continuu DC forward current transfer ratio Veg = 20 V; Ip = 25 mA BF 469 | 50 - BF 471 40 — Cre’ Capacitate de reactie H Feedback capacitance | | Ves = 30 V; Ie =0; f=1 MHz 18 | pF | fr Frecventa de tranzitie Gain bandwidth product Vor 10 V; Ip = 10 mA; f=25 MHz 60 | MHz Veesatnr Tensiune de saturatie colector- emitor de radiofrecventa Collector saturation HF voltage Te = 25 mA; Ty = 150°C 20) V NeBF 470, BF 472 TRANZISTOARG CU SIVICIU PNP PLANAR- EPITAXIALE DE IN. NALTA TENSIUNE, SILICON PNP PLANAR-EPITANIAL AIIGH VOLTAGE TRANSISTORS VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS TOUI26 BF470 BF472 — Veso —~ Vero — Veer — Vexo Tye Ts 6 Tensiune colector-bazi (—Ip = 0) Coilector-base voltage Tensiune colector-emitor (—Ip = 0) Collector-emitter voltage ‘Tensiune colector-emitor (Rgg=2,7kQ) Collector-emitor voltage Tensiune emitor-baz4 (—Ic = 0) Emitter-base voltage Curent de colector Collector current. Curent de colector de virf Collector peak current Putere totalé disipata (Tc < 110°C) Total power dissipation Temperatura maxima a jonctiunii Maximum junction temperature Domeniul temperaturilor de stocare Storage temperature range 2350 V 300 V = 300 V 30 mA 100 mA 2Ww 150 °C —65++150 °CBF 470, BF 472 CARACTERISTIC] TERMICE THERMAL CHARACTERISTICS | max. 100 °C/W I Ray-c Rezistenf& termicd jonctiune-capsulé | | Junction-case thermal ace max. 20 °C iw ' Joarea aceasta este valabili dac& terminalul de colector este lipit de cablaj pe o supta- aya de r&cire de arie minima 10mm x 10 mm. ‘This value applies if the collector lead is soldered on a copper cooling aréa of at least 19 mm x 10 aun, CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru n tay | Parameter | tin. Typ. Max. Unit. | — Teno Curent rezidual colector-bazi | i Collector-base cut-off current : | Ves = 200 V | 10 | nA | — Inno Curent rezidual emitor-bazi t | Enmitter-base cut-off current | | —Vis =5 V 0) ua ; | — Voarno Tensiune de strapungere colector-bazi | | | Collector-base breakdown voltage | | i Ie = 10 wd BF 470 | 230 lv | BF 472 | 300 | v | — Vesrcxo Tensiune de strapungere colector- : emitor | Collector-emitter breakdown voltage | “Ie =1 mA BF 470 | 250 v 117n 26 BF 470, BF 4 BANE. ASA CARACTERISTICI ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS (cont.) paramerrt Min. Typ. Max. Unit. —Verjex Tensiune de stripungere colector- | | emitor ! Collector-emitter breakdown voltage | -- Te =1 vA; Rgs = 2,7 kO i BF 472 | 300 i; Vv brs Factor de amplificare in curent | continuu \ DC forward current transfer ratio —Ver = 20 V3; —Ig = 25 mA | BF 470 50 _ BF 472 40 - Cre Capacitate de reactie Feedback capacitance —Ves = 30 V; —Ic=0; f=1 MHz 18 | pF fz Frecventa de tranzitie Gain bandwidth product | —Vee = 10 V; —Ig = 10 mA; = 25 MHz 60 | MHz Verstur’ Tensiune de saturatie colector- emitor de radiofrecvent& Collector saturation HF voltage —Ic = 25 mA; Ty = 150°C 20) V'# BANEAS/ 2N 929, 2N 930 TRANZISTOARE NPN CU SILICIU PLANAB- WPITAXIALE DE JOASA FRECVENTL SILICON NPN RPITAXIAL-PLANAR AP TRANSIST! £ 8 fe 2 4 TOI18s VALORI LIMITA ABSOLUTA ABSOLUTE JMA XIMUM RATINGS Veno - Tensiune colector bazé (Iz = 0) i 45 Vv Collector-base voitage Veno -—- Tensiune colector-emitor (Ip = 0) 45 V Collector-emitter voltage Vepo Tensiune emitor-baz4 (Ic = 0) 5Vv Emitter-base voltage Ig Curent de colector 200 mA Collector current In Curent de baza | 50 mA Base current | Pos Putere totala disipaté (T, < 25°C) 300 mw Tot alpower dissipation (Te < 25°C) 10 W Tru Temperatura maxima a jonctiunii 175 °C Maximum junction temperature ww TS Domeniul temperaturilor de stocare —65...+175 °C Storage temperature range | 119Ip. B.S. 2N 929, 2N 930 BANEASA So CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Ruj-a _Rezistenfa termicd jonctiune-ambiant | max. 500°C Wi Junction-ambient thermal resistance i \ " { Ruy-c Rezistenfa termicd jonctiune-capsuld max. 200 ‘C;W Junction-case thermal resistance CARACTERISTICI ELECTRICE (T, == 25°C) ELECTRICAL CHARACTERISTICS Parametru Parameter Min. Typ. Max.| Unit. Teno Curent rezidual colector-baz& Collector-base cut-off current Ves = 45 V 10 Texo Curent rezidual colector-emitor | Collector-emitter cut-off current Ver = 5 V ISis Curent rezidual colector-emitor | Collector-emitter cut-off current | | | | nA ix) nA Ver = 45 V; Var = 0 i 10} nA Ti:uo™ Curent rezidual emitor-baza Emitter base cut-off current Via =5 V 10 Veexcxo ‘Tensiune de stripungere colector- emitor Collector-emitter breakdown voltage | Q) Ip=2 mA 45 Lv Visxynso © Tensiune de strapungere emitor-baza | Emitter-base breakdown voltage =1yA Versat Tensiune de saturatie colector-emitor i Collector-emitter saturation voltage | (1) Ic=10 mA; Ip =0,5 mA 1Yy a a 1) tp/'T < 0.02; tp = 0,3 ms 1202. BANEA SA CARACTERISTICL ELECTRICE (T,= 25° ELECTRICAL CHARACTERISTICS ({cont.) Parametru Parameter |Min. Typ. Max.| Unit. Virusat dee fr Ceno Tensiune de saturatie bazd-emitor Base-emitter saturation voltage Te = 10 mA; Ip = 0,5 mA actor de amplifi continu DC forward current transfer ratio 5 re in curent Te = 10 pA; Ve Vo 2N 929 | 40 2x 930 | 100 Jo =0,5 mA; Ver 2Nx 929 | 60 2N 930 | 150 (1) Ic =10 mA; Vee =5 V 2N 929 2N 930 Factor de amplificare in curent alternativ AC forward current transfer ratio | Ie= 1 mA; Von = 5 V; | f=1 kHz 2x 929 | 60 2Nn 930 | 150 Freeventa de tranzitie \ Gain bandwidth product Ie = 0,5 mA; Vee =5 V | 30 Capacitatea colector-baza Collector-base capacitance Vee =5 V; f= 1 MHz Factor de zgomot Noise figure Io = 10 pA; Ver = 5 V; R, = 10 kQ = 10 Hz...15 kHz 2N 929 2N 930 150 300 200 300 120 300 350 350) 600) i i i MHz | pF dB dB 1242N 929, 2N 930 CARACTERISTICI DE CUADRUPOL LPRS Fr : ‘BANEASA ty) TWO PORT CHARACTERISTICS Parametru Parametru | Configuratia bazi-comund Common-base configuration | To=1 mA; Ven=5 V; f=18Hz i hp —_Rezistenfa de intrare Short-cireuit input resistance bop Conductanta de iesire Open circuit output conductance bey Factor de atenuare a tensiunii Open-circuit reverse voltage transfer ratio | 122 | Min. Typ. Max. Unit. | | | i | j | | 25 3 2 | 1 : | | | 1 ys 6 | x10-4TRANZISTOARE DE INALTA FRECVENTA HIGH FREQUENCY TRANSISTORSFANT PBS g ) BANBASA, ‘TRANZASTOR CU SILICIY NPN PLANAR BNA EPITAXIAL DB INALTA FRA SILICON NPN EPITAXIAL-PLANAR HF TRANSISTOR Storage temperature range ‘ ™ TO72 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS Veno Tensiune colector-bazi (Te =: 0) i 50 V i Collector-base voltage Vero ‘Tensiune colector-emitor (Ip = 0) 30 V Collector-emitter voltage | Vers Tensiune colector-emitor (Vis; = 0) | 30 V Collector-emitter voltage | Vino Tensiune emitor-bazi (Ic = 0) | 5v Emitter-base voltage i Te Curent de colector | 30 mA I Collector current \ Prot Putere totala disipata (Th < 25°C) | 165 mW | Total power dissipation ' | Tye Temperatura maxima a jonctiunii | 175 °C | Maximum junction temperature | | Ts Domeniul temperaturilor de stocare | © —53++178 °C { 325LP. RS oy BANEASA Be BF 115 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS i Ruj-e Rezistenfa termicA joncfiune-capsula | 1 | Junction-case thermal resistance max. 500 °C/W | Raya Rezistenfa termic& joncfiune-ambiant | Junction-ambient thermal resistance max. 900 °C/W CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru Parameter Min. Typ. Max.| Unit. I i ! | Toxo Curent rezidual colector-baza | Collector-base cut-off current | Yen = 10 V 100 | nA } \ \ Venajcao ‘Tensiune de strapungere colector-baz Collector-base breakdown voltage To = 10 pA 50 v Visaycno Tensiune de strapungere colector- emitor Collector-emitter breakdown voltage (1) Io =2 mA 30 v Visrjeso ‘Tensiune de strapungere emitor-baza Emitter-base breakdown voltage Ts = 10 pA 5 Vv bre Factor de amplificare in curent i continua | DC forward current transfer ratio Ie = 1 mA; Veg = 10 V 40 164 - (1) tp/T < 0,02; tp = 0,3 ms 126BF 115 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametru lees om oo Parameter Min. Typ. Max.| Unit. ! — —! Var Tensiune bazd-emitor Base-emiter voltage Te = 1 mA; Ver = 10 V 0,65 Gmav | fy Frecvenfa de tranzifie | : i i i ' | & | \ Gain bandwidth product Ie=1 mA; Ver = 10 V; ' f= 100 MH» | 150 | MHz | Constanta de timp colector-bazii : Collector-base time constant | Ie =1 mA; Veg = 10 V; | f= 50 MHz | 35 | ps Capacitate de reactie | i t Feedback capacitance | Ig =1 mA; Ver = 10 V; j ; f= 500 kHz | OS | pF Factor de zgomot i | Noise figure | | Ves = 10 V; Ie= 1 mA; ' ' f = 100 kHz; G, = 3,3 mA/V 1418 | 4B Ves = 10 V; Io = 1 mA; : | { = 300 kHz; G, =3,3 mA/V : LS 4B Ven = 10 V; Io 1 mA; { j f=1 MHz; G i 3,5 \dB | Von = 10 V; Io=1 mA: : | i f=1 MHz; G,=33 mA/ i 12 (4B | Factor de zgomot de conversie : : | Noise figure for mixer \ | ‘oo = 10 V; Ie =1 mA; I i f= 100 kHz; G,=2 mA/Vv | 35 ap! i Ves = 10 V; Ic=1 mA; | : { | f= 300 kHz; G,=2 mAjv | 35 “dB | \ Ven = 10 V; Io =1 mA; : f=1 MHz; G,=2 majVv 25 lap |a LPR S @& BF 115 _BANEASA Ss x0 igs-s00nA CI ‘c 400 ‘cou [mal 250A nto £200p A 4 i 150y cpr root 10 + HOO WA oT Sou A 25uA 0 5 0 15 20 Nel vd Caracteristici de iegire Output characteristics wo" 1 10! 10? — Ie [mal Cigtig static in curent gi la semnal mic DC and stall signal current gainH)} LP. RS. BF 167 BANEASA Bazpres, U SILICIO NPN PLANAR DE ENALTA FRECVENTA SILICON NPN PLANAR BF TRANSISTOR 3 rok B TO72 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS 1 1 Veo Tensiune colector bazi (Ig = 0) | 40 Vv ‘ Collector base voltage : Veao ‘Tensiune colector emitor (Ip = 0) : 3) V i Collector emitter voltage | Vigo Tensiune emitor bazi (Ic = 0) | 4v Emitter base voltage i | Te Curent de colector i 23 wa | Collector current i t Ip Curent de bazi i 3 mA i Base current } bo Pos Putere totalé disipata (Ty < 45°C) | 130 mW } i Total power dissipation ' ' 1 Tne Temperatura maxima a joncfiunii | 175 °C ' i Maximum junction temperature i i i Ts Domeniul temperaturilor de stocare | —65=+175 °C Storage temperature range | iBF 167 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS LER ST BANEASA i) [Rasa in Rezistenfa termici joncfiune-ambiant Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS mex. 1060 Tony : Voeoryczo + Veryero (1) : Vareno { Varen hr () (1) Up tT $0,022 to 330 Parametru Parameter Tensiune de strépungere colector-baza Collector-base breakdown voltage Te = 10 pA Tensiune de strapungere colector- emitor Collector-emitter breakdown voltage Ip = 4 mA Teusiune de strapungere emitor-baza Emitter -base breakdown voltage Tr = 10 pA Tensiune emitor-bazd Base-emitter voltage Vee =10 V; Ie=4 mA Factor de amplificare in curent continua DC forward current transfer ratio ¥ V; Ic= 4 mA 2V; Ie=10 mA Frecventa de tranzitie Gain bandwidth product OV; Io=4 ma; MHz 3,3 ms | Min, Typ. Max. 30 be on i | | 40 | 359 840 , MHz Unit. | iy mV© L P. B.S: BANEASA CARACTERISTICI ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS Parametru Cre Capacitate de reactie Feedback capacitance Vea= 10 V; f= 1 MHz alternativ AC forward current transfer ratio Vea = 10 V; Ip = 4 mA; f = 100 MHz Veg =6 V; Io =8 mA; f£=50 MHz NE Factor de zgomot Noise figure Veo = 10 V; Ie = 4 mA; : R, = 100 9; £ ' | | 5 { Dee Factor de amptificare in curent i I { | | om Cistig in putcre | Power gain i Veg = 25 V; ig =4 mA; R, = 100 Q; f= 35 MHz ' T Parameter | Mia. Typ. Me 0,25 26CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS LPRS. aR BANEASA we (cont.) Parametru Parameter | Min. Typ. Max. Tnit. Montaj in emitor comun Common emitter configuration 5 MHz 3 =10V;Ic=4 mA; Admitanta de intrare imitanta de reactie Short circuit reverse transfer admittance ‘Yes Admitanta de transfer direct Short circuit fornerd transfer admittance x, Admitanta de iesire Short circuit output admittance | 1 ! Yu | Short circuit input admittance | | | | } Notd: BF 1678 are/bas Vepeso 132 = 5,80 + 615V @ 1, +03 mA®:. TRANZISTOR CU SILI BPITAXIAL DE INAL1 PITAXIAL-PLANAR BP SILICON ‘TRANSIST( I P..R Ss, BANEASA NPN PLANAE BACVENTA Storage temperature range 8 Yo iC CK NS AZ E 072 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS Veno ‘Tensiune colector-bazi (Ig =0) | 40+ | Collector-base voltage | | Vero Tensiune colector-emitor (Iy= 0) | 25V \ Collector-emitter voltage | : \ | Veso ‘Tensiune emitor-bazi (Ic = 0) ' av \ | Emitter-base voltage | i \ | | Te Curent de colector | 25 ou | Collector current | ' | In Curent de baz& | 2mA | | Base current | Poot Putere total disipata (T, < 25°C) | mW | disipata (T, < 25°C 200 | ‘Total power dissipation : i 1 Taw Temperatura maxim’ a joncfiunii | 175 °C i Maximum junction temperature i | Ts Domeniul temperaturilor de stocare —65+ +175 °C- " “L Bp R. S. fe far BF 173 S BANBASA CARACTERISTICY TERMICE THERMAL CHARACTERISTICS Riy-a Rezistenya termicd jonctiune-ambiant | max, 600 “CAV Junction-ambient thermal resistance | CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS ee Min. Typ. Max. Collector-base breakdown voltage Io = 10 pA 40 Vinyeno Tensiune de stripungere colector- | emitor | Collector-emitter breakdown voltage Ic =7 mA 25 iy Tensiune de stripungere emitor-bazi | Emitter-base breakduwn voltage i Te = 10 pA i 4 iv Views Tensiune bazi-emitor ! | Base-emitter volt i : Vee =10 Vi Ie =7 mA 900i mv | Dass Factor de amplificare in curent continuu { DC forward current transfer ratio : Ver = 10 V; Ie = 7 mA | 40 Vee =2 Vj; Igo = 20 mA { Frecventa de tranzifie i Gain bandwidth product i Vea = 10 V; Ie = 5 mA; j f= 100 MHz 550 | Viexeno Tensiune de strapungere colector-bazi | MHz ualanit ak eB BANEASA | CARACTERISTICI ELECTRICE (T, = 25°¢) ELECTRICAL CHARACTERISTICS Cre Tin Core Parametru Parameter Capacitate de reacfie Feedback capacitance Ven = 10 V; Io =1 mA; i = 10,7 MHz Constanta de timp colector-bazi Collector-base time constant Ie =7mA; Vez=10V, f= 50) MHz Cistig in putere Power gain Vee = 20 V; Ie =7,2 mA; f = 36,4 MHz CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS Parametru Parameter (cont.) | Min. Typ. Max. 1 ! 03 0 pl i 6 ps | i 26 db Min. Typ. Max. € Montaj in emitor conan Common emitter coniiguration Ves = 10 V; Ie=7 mA; f = 35 MHz Admitanta de intrare Short circuit input admittance Admitanta de transfer invers Short circuit reverse transfer admittance Admitanfa de transfer direct Short circuit forward transfer admittance Admitanta de iesire Short circuit output admittance 45 mS 55 as 145 inS i 65 husBF 173 i PBS 6 BANEASA Putere totala disipati Total power dissipation Ryj-. Fark radiator (Without heat sink) Ryj-e Cu radiator infinit + (With infinite heat sink) « 3 (gr HOOn a tml ap 300A | 15 ' 10 50uA 5 | 50y 20 HA 4 | 0 10 20 30 Val Vd Caracteristici de iegire Output characteristics 136AX Ip. B.S. we Bb BANEASA BF 173 30 ic (ma] | 0 £ =100MHZ 550 Ty225°C se 500 3 7 T 450 1 350 : 50 05 r= 150mg 03 o «© 6 2 % 2 ~ — Meiv) Fig. 3 Curbe izo-fy 1S0-fy curves 137BF 1735S TRANZISTOR CU SILICIU NPN PLANAn- EPITAXIAL DE INALTA PRECVENTA SILICON NPN EPITAXIAL-PLANAR IF TRANSISTOR ALORIJLIMITA ABSOLU' ABSOLUTE MAXIMUM RATINGS LP. R. 8. BANEASA 8 T072 | Total power dissipation » Tye Temperatura maxima a jonctiunii i Maximum junction temperature Veno —-Tensiune colector-bazi (In = 0) | Collector-base voltage i | Vego ‘Tensiune colector emitor (Ip =0) Collector emitter voltage | Vino Tensiune emitor-bazi (I, = 0) | Emitter-base voltage Ic Curent de colector Collector current | Ip Curent de baza i Base current | Prot Putere total disipata (IT, < 25°C) | | | os Domeniul temperaturilor de stocare 1 Storage temperature range 138 40 V 25 Vv 25 mA 2maA 200 mW 175 °C —65++175 °C. P, RL Ss. OF BANEASA BF 173S CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Rung Rezistenta termici jouctiune-ambiant Junction-ambient thermal resistance max. 600 °C/W CARACTERISTICI ELECTRICE (T, ELECTRICAL CHARACTERISTICS = 25°C) Parametru Parameter . Typ. Max. Vieryeno Voaryczo (1) Vosryrn0 | Vpr0a brg | Tensiune de strapungere colector-bazi Collector-base breakdown voltage To = 10 pA Tensiune de strapungere colector- emitor Collector-emitter breakdown voltage Ie = 2 mA ‘Tensiune de strapungere emitor-bazi Emitter-base breakdown voltage Tr = 10 pA Tensiune emitor-baza Emitter-base voltage Ie =7 mA; Vee = 10 V Factor de amplificare in curent continuu DC forward current transfer ratio Ic =7 mA; Vee =10 V To = 20 mA; Vern =2 V tp (1) F <0,02; ty = 0,3 mms 38 15. 138BF 173 $ CARACTERISTICL ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) | Parametru | Min, Typ. Max.| Unit, | lt Erecventa de tranzitie i i | vain bandwidth product Ip =7 mA; Va = 10 V; i { = 100 MHz | 900 MHz TepCyre Constanta de timp colector-baza Collector-base time constant Io =7 mA; Vez = 10 V; | | f= 50 MHz | 6 ips | CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS P: . | Parte Min. Typ. Max. | Unit. Ste Factor de transfer direct | Forward transmission coeficient | Ip = 7 mA; Ver = 10 V; 4 dB | { = 200 MHz 240BF 1738 7 O° ip iwal Caracteristica de colector Collector characteristic we 7 imal Cistigul static in curent, aormat DC normalised current gain \ ° Fe o 8 pet Caracteristica de intrare Input characteristic fy {MHz} yn ' 0? ma Wr We Ema) Frecventa de tranzitie Gain bandwith product 14ATOARE CC SIL Ervvaiie be WaLrd NPN PLANAR VENTA j BULICON NPN EPITAXEAL PLANAR HF ; TRANSISTURS: Storage temperature range ic ror By ye VV é TO72 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS BF 180 BF 181 ' Veo Tensiune colector-baz4 (Ip = 0) 300 30 V : Collector-base voltage Veeo Tensiune colector-emitor (Is = 0) 1 20 Vv 20 Vv Collector-emitter voltage i | Vepo ‘Tensiune emitor-bazi (Ic = 0) 3Vv i Emitter-base voltage | | Te Curent de colector 20 mA Collector current | Prot Putere totali disipati (Ty < 25°C) 200 mW | Total power dissipation (Te < 25°C) 375 mW | Tpa Temperatura maxima a jonctiunii 175 °C | Maximum junction temperature i Ts Domeniul temperaturilor de stocare | —55-++175°C | { i t IlBF 120, BF 181 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS : Rmy-c Rezistenfa termic& joncfiune-capsuld max. 400 °C/W ! Junction-case thermal resistance | | | Ray-a Rezistenta termicd joncfiune-ambiant max. 730 °C/W! ! ! Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru «on io. Parameter Min. Typ. Max. Unit. Collector-base cut-off current i i Ves = 20 V | 100) nA Tes Curent rezidual colector-bazi | | | \ i Vosrxo Tensiune de strapungere colector- | | : emitor | \ Collector-emitter breakdown voltage | _ ' | | Io=3 mA 20 v4 Vesnevo ‘Tensiune de stripungere emitor-baz& Emitter-base breakdown voltage | | | 1 Ip = 10 pA 3 ! Vv ' ge Factor de amplificare in curent \ | | continuu i \ | DC forward current transfer ratio i (1) Ie=3 mA, Vee = 10 V | 20 20 | | (1) Ip=12 mA; Vee =7 V j 6 P| ' Vpgon Tensiune baza-emitor { i : Base-emitter voltage { \ { i Io =2 mA; Veg = 10 V | Os. vt a (1) P< 0.02; ty = 0.8. msLPR S. BF 180, BF 181 BANEASA CARACTERISTICI ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS (cont. ) Parametru Parameter Min. Typ. Max. Unit. Frecventa de tranzitie Gain bandwidth product Ic =2 mA; Vee = 10 V; f = 100 MHz BE 180 700 MHz BF 181 600 MHz Capacitate de reactie Feed-back capacitance Von = 10 V; f=1 MHz 04 | pF Factor de zgomot | oise figure Te BE 180 7| 4B ; BF 181 5| dB i i i | og 10 V3; Ie =2 mA; | | : 800 MHz 12 BOC | AG, a de reglaj a cistigului in putere wer gain regulation range { ' Te = 10 mA; f= 500 MHz. | 40 aB® LP. RS BANEASA CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS BF 180, BF 18% Sie St» Srp Parametru Parameter Configuratia bazi-comund Common base configuration Ves = 10 V; Ip = 2 mA; Ze = Z, = 50 Q Coeficient de reflexie la intrare Input reflexion coefficient f= 500 MHz BF 180 LF 181 f= 800 MHz BF 180 BF 181 Coeficient de transfer direct Forward transmission coefficient f= 500 MHz BF 180 BF 181 f = 800 MHz BF 180 BF 181 Coeficient de transfer invers Reverse transmission coefficient £ = 500 MHz i= S00 MHz Cocficicnt de reflexie la iegire Output reflexion coefficient f= 500 MHz f= 800 MHz 1@ — Caletog LP.RS. Bixeasa vel. 19 Valori tipice Typical values 0,55; 130° 0,6; 150° 0,65; 110° 0,7; 15; —70° 14; —85° 14; —110° 14; —126° —12° g 5 —20°BF 180, BF 181 Putere totalé disipata Total power dissipation Riya P&rk radiator (Without heat sink) Cu radiator infinit (With infinite heat sink) LPR S. & BANEASA WS Tye Hep (mA Lee ae i OPA, T T + 60pA + rr | i++ iii 20uA | 0 B= 0 0 — Vegl 1 Caracteristici de iegire Output characteristics f = 150 MHz 5 n —— Ic {mA} Frecvena de tranzifie Gain bandwith product 146IPRS. BANEASA BF 184, BF 185 TRANZISTOARB CU SILICIU NPN PLAKAR ERMTAMALE De INALTA. FRECYESTA SILICON NPN EPITAXIAL-PLANAR UF TRANSISTORS Storage temperature range y, » TO72 VALORI LIMITA ABSOLU ABSOLUTE MAXIMUM RATINGS BF 184 BF 185 ‘cBO. ‘ensiune colector-bazi (Ip = Vv Tensi Ie baza (I; 0 | 30 V 30 V Collector-base voltage Vero Tensiune colector-emitor (Ip = 0) 30 V 30 V Collector-emitter voltage | Vers Tensiune cclector-emitor (Vse=0) | 30V 30V | Collector-emitter voltage | | | Vero Tensiune emitor-baza (Ic = 0) | 4Vv | | Emitter-base voltage Te Curent de colector | 30 mA Collector current | Prot Putere totalé disipata (Ty < 25°C) 165 mW Total power dissipation | Tye Temperatura maxima a joncfiunii 175 °C 1 | Maximum junction temperature | | ! { | Ts Domeniul temperaturilor de stocare | —55...+175 SC |IP. R. 8, BF 184, BF 185 BANEASA eo CARACTERISTICI TERMICE THERMAL CHARACTERISTICS i . tye . | =, | Raye Rezistenfa termic& joncfiune-capsuli | max. 300° C/W i Junction-case thermal resistance i > Raya Rezistenfa termicd jonctiune-ambiant Junction-ambient thermal resistance max. 900 °C/W CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS | Parametru . . i Parameter Min. Typ. Max. | Unit. ‘ i i | ! Topo Curent rezidual colector-baza | } Collector-base cut-off current { Ven = 10 V 100 | nA Visricao ‘Tensiune de stripungere colector-bazii j Collector-base breakdown voltage Te = 10 pA 30 Vv Visecno Tensiune de strapungere colector- emitor Collector-emitter breakdown voltage (1) Ie =2 mA 30 < Viereoo _Tensiune de stripungere emitor-baza Emitter-base breakdown voltage | In = 10 pA 4 < t a) z < 0,02; tp = 0,3 ms 148MEP wh BiNbAS BF 184, BF 185 CARACTERISTICI ELECTRICE (I, = 25°C) ELECTRICAL CHARACTERISTICS (cont. ) i Parametru ! Parameter Min. Typ. Max.) Unit. { | bee Factor de amplificare in curent continua } DC forward current transfer ratio | Ie=1 mA; Vex =10 V BF 184 | 67 330, — BF 185 | 36 125 | — Vga Tensiune bazd-emitor Base-emitter voltage | ve = 10 V; Ie =1 mA 0,65 0,74 fr Frecventa de tranzitie Gain bandwidth product Ig =1 mA; Vee = 10 V; f= 100 MHz 250 MHz Tow Cye Constanta de timp colector-bazi | Collector-base time constant i Ie = 1 mA; Vee = 10 V; | f = 50 MHz BF 184 22 | ps BF 185 | 15 | ps Cee Capacitate de reactie Feedback capacitance ‘oo = 10 V; f= 1 MHz 08 | pF | NF Factor de zgomot Noise figure Ig = 1 mA; Vee = 10 V; f= 100 MHz BF 185 | 6 | dB 149LPR Sy BANEASA Sr Sopa ped o . 2 3 —~VyiV) Caracteristici de iegis Caracteristici de iesire Output characteristics Output characteristics cs 8 2% 2 ~== Vee iV] Caracteristic de iesire Caracteristici de sesire Output characteristics Output characteristicsTerter- R. 8. ws BANEASA TRANZISTOR CU SIJCIL NPN PLANAR. EPITAXIAL DE MICA PUTERE $I aNALTA FRECVENTL SILICON NPN EPITAXIAL PLANAR LOW POWER TOR RP TRASSIS Storage temperature range TO92 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS Veno Tensiune colector-baza (In = 0) 40 V Collector-base voltage Vero Tensiune colector-emitor (Ip = 0) 30 V Collector-emitter voltage Veso ‘ Tensiune emitor-bazd (Ic = 0) 4Vv | Emitter-base voltage | Ig Curent continuu de colector 25 mA Collector current i Ip Curent de baza 3 mA - Base current | | Prot Putere total disipata (1) 300 mw | : Total power dissipation j 1 Ty Temperatura maxima a joncfiunii 150 °C j Maximum junction temperature Ts Domeniul temperaturilor de stocare —55++150 °C | (1) Terminalele menfinute pind la 2mm de capsuld la Ta < 25°C At 2mm from the case the leads kept at T, < 25°C 151LPR S py BF 198 BANEASA wh CARACTERISTICI TERM ICE THERMAL CHARACTERISTICS Res-a —_Rezistenta termicd joncfiune-ambiant | max. 350 ‘CW Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametria + S Parameter | in. Typ. Max.| Unit. Visxycno —-Tensiune de strapungere colector-baza | | Collector-base breakdown voltage | | To = 10 pA 40 ly Veenceo ‘Tensiune de stripungere colector- | emitor i | Collector-emitter breakdown voltage | | (2) Ig =2mA 30 y | 1 1 Viereso Tensiune de strapungere emitor-baz_ | | Emitter-base breakdown voltage | | Ig = 10yA i 4 ly : i Vion ‘Tensiune bazi-emitor i | ! | Base-emitter voltage : i I (2) Ven = 10V, Io = 4mA i 750 jmv | bre Factor de amplificare in curent | continua ! | DC forward current trensfer ratio | i Vor = 10 V, Io = 4 mA / 27° 80 I | i i t @ + < 6,02; tp = 03 ms 1626) I. Pp. R. ‘Ss. x BF 19) ( BANEASA 8 CARACTERISTICL ELECTRICE (Ts = 25°C) ELECTRICAL CHARACTERISTICS (cont. ) P i 1 parame | Min, Typ. Max. Unit, fy Frecventa de tranzitie i Gain bandwidth product | | Vee = 10 V, Ic=4mA, | | f = 100 MHz ! 400 | MHz Ce Capacitatea de reactie i | Feedback capacitance i | Ves =10V, Ie=1mA,f=1MHz |) u,22 pF NF ! R, = 1002) f = 35 MHz 3 dB 2» 5 Ic , j {ma} 11000 . 6 400 { 400 Ptot ‘ | 3% nw) e 200 ' j so 200} 8 1 i & tp=50 pA 0 tl ‘0 0 oy 20 o 0 20 x hrc) — MeV) Putere tota!a disipata Caracteristici de iesire Ootal power dissipation Output characteristicsLPR. S BF 199 BANEASA oC TRASZICTOR CU) scLicte Pec SILICON NPN EPITAXIAL PLANGIE LOW bows NSISTOH Storage temperature rarec 8 ¢ 8 \ E TO92 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS | Veno— Tensiune colector-baz’ (In = 0) | oo ov | | Coilector-base voltage i ! Veeo Tensiune colector-emitor (Iz = 90) | 32 | | Collector-emitter voltage | ; | Ves Tensiune emitor-baza (Ic = (} i 4 | Emitter-base voltage i de Curent de colector 05 i ! Collector current ! 1 Is Curent de baza 2 ma | Base currert : I pie Putere totali disipata (1) 300 | Total power dissipation : 1 Tyan Temperatura maxima a jonctiunii 59 cf | Maximum junction temperature i | | Ts Domeniul temperaturiior ¢. stocare con (1) Terminalele menfinute pint la 2mm de At 2mm from the case the leads kept at Ty < 154CARACTERISTICI TERMICE THERMAL CHARACTERISTICS re Ruy-a Rezistenfa termicd joncfiune-ambiant - an, °C/W | Junction-ambient thermal resistance | max. 350 °C/ CARACTERISTICL ELECTRICE (T, = 25°C) ELECTRICAL COARACTERISTICS Factor de amplificare in curent continua Cc forward current transfer ratio =10V, Ie =7mA 38 88 ametru Parameter | Min. Typ. Max.| Unit. | [ 1 Vioreno’ Tensiune de strapungere colector- I | baza { Collector-base breakdown voltage | | Ic = 10 pA 40 iv Visricso Tensiune de stripungere colector- | i | emitor | i Collector-emitter breakdown voltage | | (2; :=im\ » 82 ty | Vv Apangere emitor-bazad i ! rcakdown voltage i | | 4 iv | | | i 750 Pav | | _| l ty @) r < 0,02; tp = 0,3 ms 135i. Pp. R. S. CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) P, - ; Paranvetee | Min. Typ. Max.) Unit, | 1 | Freeventa de tranzitie | i | Gain bandwidth product | | i Ver = 10 V, Ig = 5 mA, i f =: 100 MHz 550 [Matz Cre Capacitatca de reactic | Feedback capacitance Veo = 10V, To mA, = 1 MHz | 0,32 pF Ses ¢ eo imal a ' + 1 5 i Oh A seeenebeeees et Jig= s0uA ° To i os € 26 DE —Velvi Putere totald disi Total power dissi Carneteristic’ de iegire v 156BANEASA TRANZISTOR CU SILICIU NPN PLANAR. MPITAXIAL DE INALTA FRECVENTA SELICON NPN EPITAXIAL PLANAE DF ‘TRANSISTOR 8 E 2372 VALORI LIMITA ABSOLUTA} ABSOLUTE’ MAXIMUM RATINGS 7 j j Veso Tensiune colector-baz4 (Iz = 0) i 30 Vv t Collector-base voltage j Veo Tensiune colector-emitor (Ip = 0) | 20 Vv | Collector-emitter voltage | | i | Veno Tensiune emitor-bazi (Ic = 0) i 3 v i Emitter-base voltage \ | Ig Curent de colector ' 20 mA | Collector current | Pra Putere totala disipata (T, < 200 mW Total power dissipation (Wo < 375 mW i 1 Dye Temperatura maxim’ a jonciunii | 175 c Maximum junction temperature ' | | Ts Domeniul temperaturilor de stocare —55-4175 CC | Storage temperature range BF8F 200 Lop. Re “6 Aa RBANEASA SF CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Ruj-c — Rezistenfa termica jonctiune-capsuli | max. 400 °C/W i Junction-case thermal resistance i 5 8 x — a 3 Ruy-a - Rezistenta termicd joncfiune-ambiant “c/w Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS t Parametru lags ‘ ! Parameter |atin. Typ. Max.| Unit. Topo Curent rezidual colector-bazit i Collector-base cut-off current | Yes =20V 100 | nA | Vameeo ‘Tensiume de strEpungere colector- | fan | | Collector-cinitter breakdown voltage () Ie=3ma 20 iv Visnyeso ‘Tensiune de strapungere emitor-baz& : \ Emitter-base breakdown voltage | i \ Ip = 10yA 3 V | | hes Factor de amplificare in curent | i continuu | ! DC forward current transfer ratio i (I) Ie=3mA, Veg = 10V ; 20 2500 — i () Ig=12mA; Vee =7V 1 6 — i | Veron Tensiune bazi-emitor ' se-emitter voltage | Ig =2mA; Vee = 10V 081 Vv i i ; tp = 0,3 msBF 200 CARACTERISTICI ELECTRICE (T,= 25°C) Gain bandwidth product ELECTRICAL CHARACTERISTICS (cont. } Parametru | Parameter | i fy Frecventa de tranzitie \ | i Io =2mA; Vex = 10V; i f = 100 MHz : 500 “Me | ' | \ i bee Factor de aniplificare in curent ! | i j alternativ i : AC forward i GQ) Ie=SmA; Veg =5 4i- | ' Cre Capacitate de reactie : ! Feedback capacitance Vee = 10V; f= 1 MHz O5 | NF Factor de zgomot i : | | Noise figure i Ie =3mA; Vex = 10V; f = 200 MHz; Re = 1 Gea Cigtig in putere Power gain i Ver = 10V; Ie =3 mA; { i = 200 MHz ap tp (1) =< 0.02; tp = 0,3ms (rp)? @ Ga ee Zip * SotBF 200 IL P. R. S. EANEASA CARCTERISTIC] DE CUADRUPOL TWO PORT CHARACTERISTICS S Parametru . i Parameter Min. Typ. Max.) Unit. Biv —dis Yeo Oe, Pe Configuratia bazi comuna Common base configuration Ven = 10V; Ie =3mA Conductanta de intrare i Input conductance = 900 MHz f = 200 MHz Susceptanta de intrare Input susceptance f = 50 MHz f = 200 MHz Admitanta de reactie Veed-back admittance 30 MHz * = 200 MHz Unghiul admitantei de reactie Mase angle of feedback admittance | = 50 MHz i -= 200 MHz Admitanga de transfer direct Vorward trausici “diittance 50 MHz 200 MHz Unghiul admitan{ci de transfer Phase angle of forward admittance | f = 50 MHz f = 200 MHz BR 55 180 270° 270° I So 165° 145° mS mS mS mS Ps) us mS mS 160jaune BANEASA, BF 200 CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS (cont.) Parametru Min, Typ. Mas.) Unit. | Boo Conductanja de iesire | Output conductance ! f = 50 MHz 5 fas | f = 200 MHz 150 us Dob Susceptanta de iesire | Output susceptance \ f = 50 MHz 280 us f = 200 MNHz | 1100 | us | BF 2008 arejhas bpp =40+70 @ le=U,5mA; Ve gland byg=40+70 @ Ic= 2A; Vo m0 200 —Ylc) Puterea totald disipatd Total power dissipation Ruy-a Fark radiator (without heat sink) Riny ¢ Cu radiator infinit (with infinite heat sink) 1 = Catalog 1.P.R.8. BaneiP. R. Se BF 214, BF 215 BANEASA Ho} TRANZISTOARE CU SILIGU NPN PLANAR RPITAXIALE, DE INALTA FRECVENTA SILICON NPN EPITAXIAL PLANAR DF ‘TRANSISTORS Storage temperature range TO72 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATIN' Veo Tensiune colector-baz4 (Iz = 0) 30 Vv | Collector-base voltage | Vezo ‘Tensiune colector-emitor (Iy = 0) 300° Collector-emitter voltage | Vers Tensiune colector-emitor (Vaz= 0) | 30 Vv Collector-emitter voltage ' | Vino Tensiune emitor-bazi (Tc = 0) | 4 vo. Emitter-base voltage i i ! ! Te Curent de colector : 3000 ma Collector current Pret Putere totala disipaté (T, < 25°C) | 16s mW Total power dissipation | Tas Temperatura maxim’ a jonctiunii 178 ‘cf | Maximum junction temperature i Ts Domeniul temperaturilor de stocare | coTe P. RS oO BF 214, BF 215 a BANBASA CARACTERISTICI TERMICE THERMAL CHARACTERISTICS ; . . | Rusa Rezistenfa termica jonctiune-ambiant max. 900 “cw | | Junction-ambient thermal resistance | Reyld— Reristent& termicd jonctiune-capsula | max. 500 °C/W Junction-case thermal resistance | CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS | Parametru Parameter Min, Typ. Max.) Unit. 1 Ieso Curent rezidual colector-baza i Collector-base cut-off current | Vea= 10 V i 100} ond l | ng Visnjeso | Tensiune de strapungere colector-bazi Collector-base breakdown voltage Te= 10 pA BF 214 Emitter-base breakdown voltage as 30 | BF 215 | 3) | | Vesrjczo" Tensiuue de strapungere colector- | emitor | Collector-emitter breakdown voltage | | | () Ip =2 mA BE 214 | 99 oy BE 215 | 59 | v | Voameso ‘Lensiune de stripungere emitor-bazd | | 1 1 | i \ Ts = 10 pA 14 Vv ' Factor de amplificare in curent ! i continuu : =1mA; Vue =10V BF 214 | 90 3301 D.C. forward current transfer ratio | | | BF 215 | 40 165 | -IP. RS. Far BF 214, BF 215 BANEASA 4} CARACTERISTICI ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametra Min. Typ. Max.| Unit, | i Viszon Tensiune bazé-emitor : Base-cmitter voltage ' Ip=1 mA, Vee = 10 V | 0,65, 0,74 | V ! fy Freevenfa de tranzitie i Gain bandwidth product ! Tc = 1 mA; Vex = 10 V; | | f = 100 MHz 250 MHz tev Cre Constanta de timp colector-baz& Collector-base time constant Ie =1 mA; Ve = 10 V i f=50 MHz BF 214 22 | BF 215 | 15 | Cre Capacitate de reactie Feedback capacitance i Vee = 10 V; f= 1 MHz 0,7 NF Factor de zgomot i Noise figure | Jo = 1mA; Vee = 10V; i = 100 MHz BF 215 6 % EB© LPRS. i BANEASA: Putere total disipats Total power dissipation BF 214, BF 215 — Vel Caracteristici de iegire Output characteristics 10 ig (mA] g { 00 \ hee MOL | ia 80 , { | © ‘ oh | i 2 20}—— 1 Veez0v | 0 a a 1 70 9 5 ; atl. —~ ima) | — Nelv) Factor de amplificare in curent - Caracteristici de icsire continuu ‘D.C. forward current transfer ratio Output characteristics 165IP. B.S. ey BF 240, BF 241 pAnrasa QPS ZASTOARE CU SILICIU NPN PLANAR AM De MICK PUTERE 1 INALTA SILICON NPN EPITAXIAL PLANAR POWER KE TRANSISTORS vow TO072 YVALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS Vous Pensiune colector-bazi (In = 0) | 42 v Collector-base voltage { Vero Tensiune colector-emitor (Ip = 0° | 42 v Collector-emitter voltage { Vivo ‘Tensiune emitor-bazi (Ic = 0) 4 v Emitter-base voltage Ty Curent de colector j 25 mA Collector current | Ty Curent de baza | 2 mA Base current Veot Putere totalé disipata (1° 300 mW | Total power dissipation Tyr Temperatura maxima a joncfiuny 150 °C | Maximum junction temperature ‘is Domeniul temperaturilor de stocare —55++4+150 °C | Storage temperature range inalele menfinute pind la 2mm de capsuli la Ty < 25°C At 2mm from the case the leads kept at Ty < 25°C