TOSHIBA 2SK2232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L?--MOSV) 2$K2232 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm APPLICATIONS. © 4V Gate Drive © Low Drain-Source ON Resistance: Rpg (ON)=36m2 (Typ.) ¢ High Forward Transfer Admittance : [Yfa|=16S (Typ.) © Low Leakage Current : Ipgg=100/A (Max. (Vpg=60V) © Enhancement-Mode —: Vyh=0.8~2.0V (Vpg=10V, Ip=1mA) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC syMpoL] RATING [unr]) 3 Drain-Source Voltage pss «|v gas 5 Drain-Gate Voltage R@g=20k) | Vpcr 6 [Vv Gate-Source Voltage Vass £20 Vv + Shaw Drain c De 1D 25 [A 3. source rain Current Pulse | _Ipp 700 | A Ilsapeo = Drain Power Dissipation (Te=25°0) | Pp 35 |W Single Pulse Avalanche Energy* EAs. 156 mas | EAS C67, Avalanche Current TAR 25 [A _|[TOSHIBA _2-10R1B Repetitive Avalanche Bneray® EAR 35 [ms] Weight : 19g Channel Temperature Ten 150 [°C Storage Temperature Range Ta | =35~150 | *C THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL |MAX.| UNIT Thermal Resistance, Ohannel To Case Run(eng | 357 POT PThermal Resistance, Channel To Ambient | Rth (ch-a)| 62.5 [°C/W Note ; * Repetitive rating ; Pulse Width Limited by Max. Junction temperature, ** Vpp=25V, Starting Te TaR=25 25°C, L=339/H, RG=250, This transistor is an electrostatic sensitive device. Please handle with caution. sc1003 OTOHBA,F oopaly worRng (p,/mpoye, Te Gully ond Ge relay, prosuce, Neverhelen, semconaiqy caves general can SOUTER aru 18 chvere anders of sty, and'to stoi auatons in ch & mafoncion of elute t's FOShea prod ud cate 1 eh human body any of damoge co prop fn devoapng You! srsue tra TOSHIBA’ procot ar ued win species Sperntnsanae eft len tare rods Speci. Abs Baba Yaep mind te precovions and nde ons the © CBhetieRn ft ry inargenens of checual Proper arcu’ okt tte repute, wach iho a. ee i subject to change without nonce oe stmonducterRelsbiy Harabook raion contain etek pesetied only ab a gude for the applcations of our products No reponsbily 1 agumed by, TOSHIBA © He'intormaton conttved he 1998-11-12 15TOSHIBA 2SK2232 ELECTRICAL CHARACTERISTICS (Ta = 25°C) cHaracteristic | SYMBOL ‘TEST CONDITION mon. | Typ. |Max.] unr] Gate Leakage Current Toss |Vas=+16V, Vpg=0V — | = J eto] va Drain Cut-off Current Ipss__|Vps=60V, Vas=0V = | = J t00[ pa Drain-Source Breakdown . . Voltage 'V BR) Dss|Ip=10mA, Vgg=0V eo | — | — Gate Threshold Voltage Vin |Vps=10V, tp=imA os | — [20 Vas=4V, Ip=12A — [0.057] 0.08 Drain-Source ON Resistance {Rj a DS(ON) — [0.036] 0.046 Forward Transfer Admittance Nel wo} se - 18s Input Capacitance Ciss = [1000] = Reverse Transfer Capacitance Cras | f=1MHz = |] = | FF Output Capacitance Cons = [550] = Rise Time C wv Ip=12A =|} 2%) - a v vos oS 1 out vent Turn-on Time | ton 5 RLS — | so} — Switching g 2.50 {Time < ns Fall Time cy =| 55) — VIN : tr, t¢<5ns Turnoff Time! tor — | Duty =1%, ty=10p8 — | 130) — Total Gate Charge (Gate- Source Plus Gate-Drain) % —| 8) = Gate-Source Charge Qes — [2] — | 7° Gate-Drain(“Miller”)Charge | Qua =| 13] = SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION wan. | Typ. | Max. | UNIT] Gontnncs Drain Reverse | y) _ _|_T ala Pulse Drain Reverse Current | _IDRP = = | = J t00 [7a Diode Forward Voltage Vosr _|Ipr=25A, Vas=0V — |= [-is[v Reverse Recovery Time trr___|IpR=254, Veg=0V — [60 | — [as Reverse Recovery Charge Qe |dlipr/dt=50A/ ys — as | — | ac MARKING * Lot Number k2232-}— TYPE fe L- Month (Starting from Alphabet A) UY Year (Last Number of the Christian Era) T998-11-12_2/5TOSHIBA i ARENT Ip (A) i ‘® Ms FORWARD TRANSFER ADMITTANCE 2SK2232 1p = Vos 1p ~ vos counox souRce sake vess28¥ a Yaa a Ia a DRAINSOURCE VOLTAGE Vos «W) DRAINSOURCE VOLTAGE. ps 1p - Vos Vos ~ Vas “—4 : 209 Vial “i _| source, ‘COMMON SOURCE A fot | sone sease if Vose10v Bo a 2 s 1 Ipe2sa a § & 12. ro 2 a 2 <| J Pry yy a I 1 Ta GATESOURCE VOLTAGE Vos > GATE-SOURCE VOLTAGE. Vos) Nol - 1, Rpscow) - In counon souReE Yos=10¥ 5 : 38 oot 38 3 ool “Tos 1 SC DRAIN CURRENT Ip «) DRAIN CURRENT Ip (A) 1998-11-12 3/5TOSHIBA Rpg (on) ~ Te on ‘connon 8 source a a2 e. 25 on 2 2 oa 5 2 o 3 a Vosn10¥ { Py ita ee oa ‘CASE TEMPERATURE. Te ¢) CAPACITANCE - ¥; 000, DS. 5 gs roo] SOURCE vos=t co Taga 0 DRAINSOURCE VOLTAGE Vpg «V) Pp =e e LL ttt ttt & 4 : Gn 2 i (CASE TEMPERATURE Te C0) ‘GATE MRESHOLD VOLTAGE. Van «) [RAIN REVERSE CURRENT Ipg & DRAIN SOURCE VOLTAGE Vs. (W) 2SK2232 Ip - Vos. connox soURCE ege0,-1¥ source <0 ast DRAINSOURCE VOLTAGE Vg «W) Vin - Te ‘COMMON SOURCE CASE TEMPERATURE Te ¢) DYNAMIC INPUT/ OUTPUT CHARACTERISTICS. ‘COMMON SOURCE Was! ‘GATE.SOURCE VOLTAGE Vos TOTAL GATE CHARGE Qy 0) 1998-11-12 4/5TOSHIBA DRAIN CURRENT ip A) INGLE PULSE. oo on ti Sip 10op te MMPEDANCE rice) Ren ieb-ed th = tw. Rehich PULSE WIDTH ty ‘eo, ‘SAFE OPERATING AREA fp MAX (PULSED) 100 sof conrinvous) | DC OPERATION 5] * SINGLE NONREPETIIVE PULSE te=25 “bs T T 130 100 DRAIN-SOURCE VOLTAGE Ypg. (¥) 2SK2232 Eas ~ Teh Po = 60] 2 Bs dw = cansommreureannine ta, £0 Bypss sv tan, h ‘TEST CIRCUIT WAVE FORM _—Bvpss_ ‘Bypss- Yop’ 1998-11-12 5/5