UNIT «1 +L +E 1 VV AV + ct V. & Expecssion R BjPy + Rye + RR, 9. Nodal analysis = KCL Number of independent mesh equations is given by,19. avo vaio =f fena AIS Vai Average Vai oak tactor = Mavinwun Va Ser RMS Vat Uinpestance of AY. cirouit RON Lmpedance of AC citeuit R-jX Impedance of REC citeuit Rep -Xe) Fox, X REA —¥) ForX>® Conversion of polar to rectangular form 4.20 = Acos0 + jBsin Conversion of rectangular to polar form Where, d= Va +B = aw"(2) UNIT - IL Series resonant frequency 1 Mz rev Lc arallel resonant frequency 1 ii Re axle Band width BW ==Quality factor, eta lp oR Upper half power freque 6 1, Self inductance, N 1 1 & Mutual inductance aw Nida _ Naty hd Coefficient of coupling, M VoL; 10. For the circuit with dependant source, Thevenin ML. In Thevenin’s circuit, the current flowing 2. 13. Power across the load is given by 14, Condition for maximum power transfer, aP, =0 aR, 15. Maximum power transfer to the load is given by 2 “aR, SPECTRUM ALL-IN-ONE JOURNAL FOR ENGINEERING STUDENTS —________ SIA GR;ere tere are no mobile charges and only bound or fixed charges are sare Iris also known as depletion ezion- Press Deplton Regia: Te 2100 whi wee charge region ide is called a 5 nent equation i given BY The total diode peye"D ‘Where

= 1.2% The Fourier series representation of the output current for the half-wave rectifier circuit is given by, Filters Capacitor filter : 1 RF 4V3fCRt For full rectifer 1 2Vi few For halfwave rectifier Inductor filter : Ry f 3¥20L L-section filter : 1 Re Saute resection filter : RP LG GR,wa INTE HY DER AEADY |ASIC ELECTRICAL AND ELECTRONICS ENGINEES! he ’ UNIT - IV. 1 Wansistor A junction 4 “Bipola iy is transistor’ or “Bipolar Junction Transistor BIT)" & SP ee senmnmcto device is Basel a semiconductor ena] frmed #0106 a 2% Wpevorwar A\DBipolar Junction Transistor (BIT) is generally classified 8 (NPN transistor Gi) PNP tansstr. eS j | © a) NPN Transistor PMP Transistor 4. Theediferent types of transistor configurations are Common Base Configuration i) Common Emitter Con 1 Collector Configuration 4 @ a related by cin The relationship between and [due to majority carer © Jated bY 5 Comaon Emitter Current Gain (8) at J, ina D.C. mode is defines = ‘Te melationahip between elector cuent and base cust fy 2 D. ale Bus * Aly & Collector Current of a Common-base Transistor Jew tla to. ea ia 1. Operating Point of a Transistor Tez signal colector cuent and emit collector voltage are known as OPENS point. Another name for this pointis “Quiescent point” (or) Q-point : 4 Biasig: For the transistor to act as an amplifier is must be operated in its active reB!00. ‘The method of applying external ‘oltages 0 operate the transistor in the ative region is known as biasing, 9. Stabilization acting as an amplifier shifts mainly with changes in Icy, “B” and ¥,,- The prosess of ‘The operating point ofa transistor dent of [a B and F,, is known as stabilization. making the operating point indepen 10, Stability Factor, S ‘The rate of change of collector current (I) with respect to collector-base leakage current (J,.) ate I) ctor at constant d Bis called stability factor ‘S’ (tee er ak »S= =o Aco Look for the SIA GROUP Loco {ff on the TITLE COVER before you buymM Constant Vahey | 8 in rar a 3 : Stability theton, 9. aU, nies Way | Stability Factor gn | The rate of eh change of eg #9 ler creat, With re a m oI, . : Fixed Bias S=14p in + Re(+p) Teo : - laa, 1+ lf Thermal Resistance Thermal resistance is denoted by “0 and 8=(7,-TyP, Where, ‘can be expressed as, T, = Collector base junction temperature r, .mbient temperature P= Power dissipated. et mLates ee oaSse ee eee Tie a BASIC ELECTRICAL AND ELECTRONICS ENGINEFRING [NTU Hy. \ 7 hy Preset nal Stability : the requ the rate nt whic heat iv eetemsed at the eer ge ‘which the heat ean be diss ler stondy wlate condition, m ique sasitive devices stich as diodes, transistors are used, which p ng points constant teters of Two Port Network or two port network a rovide compensalint Yl any, is input impedance in ohms is reverse voltage gain forward current gain + output admittance in mhos, Je Stage Transistor Amplifier Using b-parameters + 1th, 2, Deh th AZ hy hy Beth ifier Using b-parameters hg Fy Ry Irate & ble RR resistance (4,,)= 4y.—% B+; Rs resistance (,) = 4," RR Ee SIA GROUP Loco Zh on the TITLE COVER before vou buy— Lo ust OF MPORTANT FORMULAE Current Gain(4,). "a Teh R Input Resistance (R, hay %) = 4 Thy .R A R Nowsee Bn )= 4, fe i Output Conductance (G,,)= hy ape ie thy 23. Analysis of CC Amplifier Using h-parameters 0 1h, Re Current gain( 4, Input resistance(R,.) = h, Voltage gain( 4, Ire Output conductance(G,.) = hy hth UNIT -V L Field Effect Transistor an be used 3s i lar transistor, and ¢ three terminal semiconductor device that is similar to bipo Field effect transistor is a threeBASIC ELECTRICAL AND ELEC Symbol of Tunnel Diode Svmhal af Varartar Diode