CONTENTS ‘There are no problems and therefore, no problem solutions for the "read-only" Chapters 4,9, and 13 PART I Semiconductor Fundamentals CHAPTER 1 Semiconductors: A General Introduction CHAPTER 2 Carrier Modeling CHAPTER 3 Carrier Action PART IIA pn Junction Diodes CHAPTER 5 pn Junction Electrostatics CHAPTER 6 pn Junction Diode: I-V Characteristics CHAPTER 7 pn Junction Diode: Small-Signal Admittance CHAPTER 8 pn Junction Diode: Transient Response PART UB BJTs and Other Jui CHAPTER 10 BJT Fundamentals n Devices CHAPTER 11 BIT Static Characteristics CHAPTER 12 BIT Dynamic Response Modeling CHAPTER 14 MS Contacts and Schouky Diodes R2 Part II Supplement and Review PART III Field Effect Devices CHAPTER 15 Field Effect Introduction—The J-FET and MESFET CHAPTER 16 MOS Fundamentals CHAPTER 17 MOSFETs.-The Essentials CHAPTER 18 Nonideal MOS CHAPTER 19 Modern FET Structures Lt 34 S1 o-1 7 84 12-1 144 R2-1 15-1 16-1 74 18-1 19-1[CHAPTER 1 Ll (a) From Table 1.1... (i Si or Ge Gi) AIP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InP, InAs, or InSb (b) Crystalline material has the same atomic pattem or order throughout the material, while polycrystalline material has crystalline subsections that are misaligned with respect to each other. (©) A unit cell is a small portion of a crystal that could be used to reproduce the crystal. (The preceding is from the first sentence of Subsection 1.2.1.) @ = — Unitcelt Atoms/unit cell oan @ 1A=108 cm ( a (one lattice constant) (g) 4 (h) As summarized in Table 1.3: ( direction, and < >--equivalent directi (i) See Subsection 1.3.2, tal plane, { }--equivalent planes, { ]--crystal 12 In the Alp sGag 5As unit cell, pictured below, fcc sublattice sites containing the Column TIL elements are equally occupied by Al and Ga atoms. Ll13 (a) Ge crystallizes in the diamond lattice where there are 8 atoms per unit cell (see Subsection 1.2.3). Thus 8 8 DENSITY = tt (5.65 x 10-8)3 4.44 x 1022 atoms/em3 14 (@) From Fig. 1.3(), we conclude nearest-neighbors in the bec lattice lie along the unit cell body diagonal. Since the body diagonal of a cube is equal to V3 times a cube side length (the lattice constant a), ‘Nearest-Neighbor) _ ¥3_ ( Distance he 2% (b) From Fig. 1.3(d), nearest-neighbors in the fc lattice are concluded to lie along a cube- face diagonal. The diagonal of a cube face is equal to V2 times a cube side length. Thus Nearest-Neighbor) _ V2, ( Distance ie 24 15 (a) Looking at Fig. 1.4(a) one concludes e e e e e ho (b) For Si at room temperature a = 5.43 x 10°8 cm. From the above figure one concludes that there are (1/4 x 4 corner atoms) + 1 body atom = 2 atoms per an area of a? on the (100) surface. ‘Thus one has 2 = — 2 ___ = 6.28 x 1014 Si atoms/em? @ (5.43 x 10°8)2 1-2(© For a (110) plane one has the atom placement pictured below (@) On the (110) plane in the area a x V3a one has (1/4 x 4 corner atoms) + (1/2 x2 edge atoms) + 2 body atoms = 4 atoms. Thus one has 4 2N2 14 Si 2 Todi ~ Gasx 19H? ~ 259 X 10! Si atomslem (©) MATLAB program script (paralleling Exercise 1.3)... Solution to Problem 1.5(e) Neinput ("input number of atoms on (100) face of unit cell, N= a=input (‘lattice constant in angstrom, a = '); eurfaccden=N* (1.0€16) /(a*2) Amuuber of atoms/em-2 (Note: This and all other problem solutions are available on disk.) 16 (a) (i) Following the procedure outlined in the text 1,3,1 intercepts (normalized) 1,1, 1 /intercept}s 3,1,3 reduction to lowest whole-number set (313) .Miller index notation for plane Gi) As noted in the text near the end of Subsection 1.2.4, the normal to a plane in the cubic crystal system has the same Miller indices as the plane. (3137 -Miller index notation for normal to plane (b) @) Again following the Miller indexing procedure, vl normalized intercepts 42 .[Lfintercept]s. 1,12 lowest whole-number set (12) .-Miller indices of plane 1-3Gi) Assume the vector has a length d. Its projections along the x, y, and z axes are then 0, 0, and d, respectively. Reducing to the lowest possible whole-number set and enclosing in square brackets, then yields (001) Miller indices of direction vector Aa For each of the given planes, the Miller indexing procedure must be reversed to determine the intercepts of the given plane on the coordinate axes. Using part (c) as an example, one proceeds as follows: (123) «Miller indices 1, 2,3 =-[fintercept}s L121B intercepts The plane in question intercepts the x, y, z coordinate axes at a, a/2, and a/3, respectively. Note that any multiple of the cited intercept set — such as 3a, 2a, a— would also be correct. Alll such planes are parallel equivalent planes. 4, LEP x (@) Zz a x ©) 14Ls Miller indices may be viewed as specifying the projection (in arbitrary units) of the to-be- pictured vectors along the coordinate axes. For example, [010] corresponds to a vector with a unit projection along the y-axis and no projection along the x- or z-axes, In other words, [010] is coincident with the +y coordinate axis. The other required direction vectors are deduced in a similar manner and are as pictured below. 19 As noted in the problem statement, two directions (/4yk1/1] and [/gk2/)] will be mutually perpendicular if Ayha + kik + hia = 0 (a) Here (hyil1] = [100], requiring ha = 0. All directions (Okzl2] are perpendicular to [100]. Two specific simple examples are (001] and [011]. (b) Given [f141/1] — [111], one requires the Miller indices of the perpendicular direction to be such that hz + k2 +2 =0. Two specific examples are (01T] and [112]. 1-5Lio ‘As shown in the following left-hand figure, when the [011] and [010] directions are pictured simultancously, it becomes obvious that the angle between the two directions is 45°. Alternatively, the angle between the two directions can be computed using the cos(@) relationship in Problem 1.9. Specifically, given [fyk1/1] = [011] and (/pk2/2] = [010], cos(@) = 1/Y2 and @= 45°. ‘The required positioning of the "grooves" on the wafer’s surface is pictured in the following right-hand figure. fou) | Jas° {010} grooves Lu (@) If the Fig. P1.11 unit cell is conceptually copied and the cells stacked like blocks in a nursery, one concludes the resulting latttice is a [simple cubic lattice| (b) There is one atom inside the unit cell and the unit cell volume is a3. Thus atoms/unit volume = 1/a3]. (©) For a (110) surface plane the atom positioning would be as pictured below. Ha Latom _ 1 unit area ~ (ay(f2ay > V3a2 (@) [111] ... The specified vector has equal projections on the three coordinate axes. 1-6Liz Equivalent planes: (a) 6, (b) 12, (c) 8. Equivalent directions: (d) 6, (e) 12, (f) 8. NOTE: The answers may be deduced from geometrical considerations — or ~ by noting the total number of possible combinations of the given, and negatives of the given, Miller indices. 113 (a) In the simple cubic latice the nearest-neighbor distance is a, where a isthe side length of the cube, and the atomic radius r is therefore a/2. Moreover, there is one atom per unit cell. ‘Thus Occupied volume = Fx r3 = $x (a/28 = na%V6 Total cell volume = a3 Occupied volume Ratio = “Total volume aT “6 (b) In the body centered cubic lattice the atom in the center and any one of the cube comer atoms are nearest neighbors. Thus 1/2 the nearest neighbor distance is r = V3 a/4. Also, there are two atoms per unit cell. diagonal = 4r = 3a Occupied volume = 24% r3) = $x (V3.a/4)3 = 8, a3 Total cell volume = a3 jo — Occupied volume _ V3x Ratio = "Total volume = 8 1-7(c) For a face centered cubic lattice, the closest atoms lie in a cube face. Also, there. are. four atoms per unit cell in the fcc lattice. face diagonal = 4r =Y2a; r = \2a/4 Occupied volume = 4Gnr3) = be 2 a/4y3 -2y a Total volume = a3 io = 2k Ratio = “== (@ As emphasized in Fig. 1.4(c), the atom in the upper front comer of the unit cell and the atom along the cube diagonal 1/4 of the way down the diagonal are nearest neighbors. ‘Since the diagonal of the cube is equal to V3 times a cube side length, the center-to-center distance between nearest-neighbor atoms in the diamond lattice is V3 a/4, and the atomic radius r= 13 a/8. Moreover, there are eight atoms per unit cell in the diamond lattice. Thus Occupied volume = 8Gnr3) 2 2, (3.a)3 = Bras Total volume = a3 jo = 38 Ratio = 7g 1-8ICHAPTER 2 21 (a/(b) The MATLAB program script yielding both the part (a) and part (b) results is listed below. A combined plot comparing the part (a) result (solid-line) and part (b) result (dashed-line) is included before the program script. At T = 300 K the part (a) relationship yields [EGG00K) = 1.1245 eV| al val vol 1.04] + SS o 100 200 300 400 500 600 TKK) MATLAB program script. %EG Computation (EG versus T) close clear sparabolic Fit Parameters EGO=1.170; 4. 7300-47 b=636; Parabolic computation and plot 7=[0:5:600]; 21EG-EGO-a.* (T.*2)./ (T+); EGSUU=EGO-a..* (300.2) . /(3004D) ; plot (T,EG); axis({0 600 1.0 1.2]); grid: xlabel (*T(K)*); ylabel ("EG(eV) ") ; hold on Linear computation and plot EGO=1.205; plot (T, EG," hold off 89=300K result £6300 22 (a) See Fig. 2.4(a). (b) See Tig. 2.4(b) or the left-hand side of Fig. 2.7(b). (0) See the left-hand side of Fig. 2.7(c). (@) See Fig. 2.10(@) (©) See Fig. 2.10(b). 23 (a) See the right-hand side of Fig. 2.7(b). (b) Sce the right-hand side of Fig. 2.7(c). (©) See Fig. 2.13(a). (d) See Fig. 2.13(b). (©) See the extreme left-hand side of either Fig. 2.13(a) or Fig. 2.22(b). (P) See the extreme left-hand side of Fig. 2.13(b). (g) Sce the extreme right-hand side of Fig. 2.16. (h) See the extreme left-hand side of Fig, 2.18. (i See the middle of Fig. 2.18. (i) See the extreme right-hand side of Fig. 2.18. (k) See Fig. 2.19. (WD See Fig. 2.19. 2-224 {@) The removal of the column III Ga atom with three valence electrons leaves five dangling bonds in the vicinity of the vacancy. The removal of the column V As atom with five valence electrons leaves three dangling bonds in the vicinity of the vacancy. (b) When a Si atom with four valence electrons is inserted into the missing Ga site, there is ‘one extra electron that does not fit snugly into the bonding pattern. Conversely, when a Si ‘atom is inserted into the missing As site, there are one too few bonds to complete the bonding scheme.--There is a hole in the bonding scheme. Answer-(a) Answer-(b) (© [n-type] ... The extra electron noted in part (b) is readily released yielding an increase in the electron concentration. (A) [p-type] ... The missing bond noted in part (b) is readily filled at room temperature yielding an increase in the hole concentration. © @ n-type p-type 2-325 As noted in Subsection 2.4.1, gc(E)dE represents the number of conduction band states/cm} lying in the energy range between E and E + dE. It follows that the number of states/cm3 in the conduction band lying between energies Ec and Ec + 94 is simply ‘obtained by integrating gc(E)dE over the noted range of energies. Et kT + poe peer statesfem3 = [ geEae = Mn 200 | ni YE~Eq dE le. wa de ida are wis © 2.6 (a) The probability of electrons occupying states at a given energy under equilibrium, conditions is given by the Fermi function. Here we are told the energy of interest is E=Ep. Thus oe 1 L RED) = oer boat = 2 (b) The desired probability is again given by the Fermi function. Here we are told Ep = Ee and the energy of interest is E = E¢ + kT. Consequently, E, + kT) = ——__1___ RE e+ RD = eat) (©) The problem statement indicates flEc+kT) flEctkD), or 1 1 1 __e(GetkT-ER KT 14 CEctkT-EpVAT | 4 (EetkT-ERUT | 4 @ (Ect kT-Ep) ‘Thus we must have Ec + kT Ep = Ep— (Ec + KD) or 2-422 The distribution of electrons in the conduction band is given by ge(EY{E); the distribution of holes in the valence band is given by gy(E)[1 —/(E)]. Working with the electron distribution we note, AE) = —1___z (8 - Fever 1+ e€-Enikt for all E > Ey if the semi- conductor is nondegenerate Thus gelE YE) = mela Es) eo Ph = « (EE)! e-E-EDMT ‘The extrema points of any function are obtained by taking the derivative of the function and setting the derivative equal to zero. df .(E YE] = —K—— eE-FORT — (pp)? @E-BDKT fs) e THEE e 2(E-E,)'? set 0 Clearly 2NEpeakE or Epeak - Ee = kT/2 and Epoak = Ec + kT/2| for electrons in the conduction band ‘The development leading to the peak energy of Eyeak = Ey ~ KT/2 for holes in the valence band is completely analogous. 2-528 ‘The electron population at any energy is given by ge(EY{E). Also, since the semiconductor is nondegenerate = 1 __ zs .-€epir . AE) Tae@— ep = e «for all E > Ec ‘The electron population at E = Ee + 5kT normalized to the peak electron population at E-E.,+kT/2 is therefore ratio = Sc(Ect SKM(Eet SKT) Bc(Ect ET /2)flEctkT/2) = VSKT eEetSkT-ERT _ AS 2 2 = Vin 2EokI-Bpet ¥10 e 3.51 x 10 29 ‘The hole and electron distributions are given respectively by Bc(EY(E) = Bade. YE~Eg e~€-BrVeI we (electron dist.) a [mn 2m -egiser YE~Eg e“€-Boikt KS and : (hole dist.) = g(E{1— fe) = ™P ro VE, E e(-Exvkt wh - (sivare Lm esto VERSE et aur 293 wh Note that the approximate (non-degenerate) expressions for the Fermi function established in Subsection 2.4.2 were employed in writing down the carrier distributions. 2-6‘The required MATLAB program script and resultant plots are presented below. Computations were performed employing Eg = 1.12 eV, kT = 0.0259 eV, ma*/mg = 1.18 and mp*/mg = 0.81 from Table 2.1, and h = 6.63 X 10 joule-sec and mg = 9.11 x 103! ke from the table of physical constants (inside back cover). The plots are clearly consistent with Fig. 2.16 in the text. (Note that the electron distribution scale is multiplied by 1015 while the hole distribution scale is multiplied by 106.) The distributions peak at kT/2 from the band edges graphically reconfirming the peak positions noted in Problem 2.7. MATLAB program script... sproblem 2.9...Carrier Distributions sIntialization close clear Constants BG=1.12; mpr=0.81; = 63e-34/ (2*pi) ; 6e-19; joules = cl*ev 1200-6 Sim 3=c2*om~3 Computation deltak=linspace (0, 5*kT) + SdeltaE = E-Ee or Ev-E in eV Asn0* sqrt (24m0) / (pi*2*hbar*3) ; An-mnr* (3/2) *A;_ Ap=mpr’ (3/2) *A; e_dist=cl*c2*Aan*exp(-EG/(4*KT) ) .*sqrt (cl*deltaE) . “exp (-deltaz/kT) ; hodist=cl*c2*ap*exp (~3*8G/ (4*kT) ) .*sqrt (cL *deltak) . 4exp (—deltaB/KT) ; ‘Note use of cl and c2 to make distribution units number/cm*3-eV sPlots subplot (2,1,1), plot(e_dist,deltaE/kT); grid xlabel (‘electron distribution (nunber/cn3-eV) ") ylabel (* (E-Ec) /kT") subplot (2,1,2), plot (h_dist,-deltaz/kT); grid axis ({0,1.467,~5,0]) xlabel (‘hole distribution (number/cm*3-eV) ') + ylabel (* (E-Ev) /kT") 2-7(EEWKT & 12 14 4 6 8 10 hole distibition (numberlem“3-¢¥) xto* 2.10 (a) Utilizing Eq. (2.6a), the approximate (nondegenerate) expression for the Fermi function established in Subsection 2.4.2, Eq. (2.13a), and Eq. (2.16a), one obtains (m, av 2ma [r2h3) YEE, eE-ERKT 2(m@errante)” e(Ee-FevkT (normalized dist) = SEWED ~ 2VE-Ee e-ELOMKT Weary? (b) A plot of the normalized electron distribution verus energy for three different temperatures and the MATLAB program script yielding the plot are given below. From the plot one observes that the peak energy, which occurs at kT/2, moves to progressively higher energies with increasing T. More significantly, the distribution becomes less peaked in nature and the height of the peak decreases with increasing temperatire. 2-8MATLAB program script... sproblem 2.10...Normalized Electron Distribution as a function of T SIntialization close clear SComputation and plot k=8.617e-5; T=[300 600 1200]; Krk. *17 E_Ec=Linspace (0,0.4) 3, sqrt (E_Ec) / (sqrt (pi) #kT (4) * (3/2) .*exp (-B_Ec/KT (1)) )=dist plot (& Ec,y); grid axis({0,0.4,0,20}) xlabel (‘E-Ec (eV)'); ylabel (‘normalized distribution (1/ev)"); text (005,12, $300K", 'Color', *yellow'); text (.01, 7, "600K", Color", magenta") ; text (.015, 3, "120K", "Color", 'cyan') normalized distribution (1leV) 00s at ots 0 EEC(ey) 025 0a 0as 04 2-92M Substituting the Eq.(2.6b) expression for gy(E) and the Eq.(2.7) expression for f{E) into Eq.(2.8b), one obtains 1 - 1 1+e€-EOkT ~ | 4 eGr-EykT and Ley mpvdmp YE, -E dE TAP Yepagg 1 € EF EMME Now letting yo Bk AT ny = Eek ye Evouom —> —2 yields p =rnbe/ Drag ery? ” nan re yp 1+ en Recognizing = 1 Finn) =f eet eni-pira mera of oder 12 lp Lt etn and defining vy = 28427? Qn cone obtains 2-10 (2.9) (2.10a)" (2.10b)" (2.10c)" (2.11) (2.12) (2.13b)p= My 2 Fin (ty) (2.14b) If the semiconductor is nondegenerate, such that Ep > Ey + 3K7, then ty <-3. Since 112.0 in the Fermi-Dirac integral, exp(7-tWv) 2 exp(3) for all 7). Thus one obtains FinGw) = [ nide(rn dn = HE (GENT 0 Substituting this approximate relationship into Eq.(2.14b) finally yields p = NyeGr Eek (2.16) 2.12 fa) electron distribution = ge(E\f(E) = (Nc/KT) e-EERUKT where use has been made of the fact that the semiconductor is nondegenerate (E Ee 2-1then n= ["s (EYEE = eo ke ET] Jp, 1+ eE-Ennr Let 1 =F, ne = FEF: Bip 3 = This yields di n =Ne [ ue ‘The integral here can be performed in closed-form. n= Ne[n-In(+e™ )[ = Nelne + In(1+e% J] The relationship analogous to Eqs.(2.14a) is therefore Ne [ne + Int If the semiconductor is nondegenerate, Mle <-3. Thus In(l+e) = Ife" (1+e7 )] “Ne + eM We therefore conclude n = Neel = Nc elte-Ee kT since exp(Mc) << 1 and In(1-+x) = = -Ne + In(1+eM ) ifx<< 1, ‘The above holds for a nondegenerate semiconductor and is the desired relationship analogous to Eq.(2.16a). Actually, the relationship has turned out to be identical to Eq.(2.16a).213 (a) Rewriting Eqs.(2.13), one obtains spe = rn ve mba «)32, (in = nol and ta where Using the numbers cited in the problem statement, the k-value given on the inside back cover, and remembering to convert from eV to joules, one calculates No = 2[ 20-109 x 10°1 (8.617 x 10°5 (300)(1.602 x 109 )]°? (6.625 x 10347 = 2.510 x 1025/m3 = 2.510 x 10!%/em3 and therefore Nov = (2.510 x 1019%/em3) (m*/mg)3/2 (b) Semiconductor Nc (em) Ny (cv) Si 3.22 x 1019 1.83 x 1019 Ge 1.02 x 1019 5.42 x 1018 GaAs 4.26 x 1017 9.41 x 1018214 (a) Referring to Fig. 2.20, one concludes: (i) ni(Si) = ni(Ge, 300K) at T = 430K. Gi) ni(GaAs) = nj(Ge, 300K) at T = 600K. (b) With the differences in the effective masses neglected, Tia. @PGAPAT _ 4 (egp-EGaVkT = @1/0.0518 — 2.49 x 108 Tin ~ ¢-EophT 2.15, ‘The MATLAB program script implementing the requested nj(Ge) vs. T computation is reproduced below along with sample numerical results. As must be the case since the same computational equation was used in both cases, the numerical results are found to be consistent with the values displayed in Fig. 2.30. MATLAB program script ‘problem 2.15...ni versus T for Ge SInitialization close; clear Computation k=8.617e-5; 475); ni= (1.76216) .* (T.“1.5) .*exp(-0.3923/(k.*T)): epioplay result on screen j=Length (1) ; Eprinté (*\n\nt(K) ni (Ge) \n") for if=1:j, fprinté ("8-10.£8-10.3e\n" 7 (44) ,ni (44)) 7 end) TK) —ni(Ge) 225 9.841e+10 250 8.705e+11 275 5.25le+12 300 2.375e+13 325 8.597c+13 350 2.61 le+14 375 6.888e+14 400 1.620c+15 425 3.463415 450 6 838e+15 475 1.263e+162.16 @ AsT 0, n-0 and p> 0. (See the discussion in Subsection 2.5.7.) (b) Since N >> nj, one would have n= Np and p = n2/Np_ ...ifadonor p= Na and n = n2/Na_...if an acceptor We are told n = N and p = n/N. Clearly the impurity is a donor . (c) Here we are given the minority carrier concentration, n = 105/cm3, As long as the Siis nondegenerate, one can always write np = Thus p = npn ~ G0? _ Note: From previous problems we recognize that the above carrier concentrations do indeed correspond to a nondegenerate semiconductor. @ Given Ep—Ej = 0.259eV. and T = 300K, n= n,eEF-EMT = (1010) ¢0.259/0.0259 — 2.29 x 10!4/em3 p= n,eG-ENIkT ~ (1910) ¢-0.259/0.0259 _ 4.54 x 105/em3 (©) Employing the np product relationship, np = n%2 =n? n =V2n, = 1.414 X 10!3/em3 Next employing the charge neutrality relationship, p-n+Np-Na = n2-n+Np = 0 Np = n/2 = njfV2 = 0.707 X 10!3/em3217 (a) Atroom temperature in Si, nj =10!0/cm3. Thus here Np >>Na, Np >> ni and n Np = 10!5/cm3 p= n2/Np = 105/cem3 (b) Since Na >> Np and Na >> nj, NA (c) Here we must retain both Na and Np, but Np - Na >> ni. Np-Na = 105/em3 n2(Np = Na) = 105/em3 (d) We deduce from Fig. 2.20 that, at 450K, nj(Si) = 5 x 1013/em3. Clearly, nj is comparable to Np and we must use Eq.(2.29a). 172 ne Np « [of +02 = 121% 10!/em3 2 13)2 Se Gx y 8 497 x 105/em3 1.21 x 1014 (©) We conclude from Fig. 2.20 that, at 650K, nj = 10!6/cm3. Here nj >> Np. Thus n = ny = 10'6/cm3 " p = nj = 1016/cm3218 (i) As established in the text [Eq.(2.36)], By = FZ Ey 4 Fer indmg*ima*) ‘Taking mp*/ma* to be temperature independent and employing the values listed in Table 2.1, one concludes Ej displacement part TK) kT(eV) from midgap (eV) fc) 300 0.0259 0.0073 @ 450 0.0388 0.0109 © 650 0.0560 0.0158 Alternatively, the mp*/mg and mn*/mg versus T fit-relationships cited in Exercise 2.4 may be used to compute the mip*/mg* ratio. One finds Ej displacement pat TAK) —mpt{mint KTV) idgap (eV (a-c) 300 0.680 0.0259 —0.0075 (d) 450 0.703 0.0388 ~0.0103, (©) 650 0.719 0.0560 —0.0139 (ii) Ep - Ej is computed using the appropriate version of Eq.(2.37) or (2.38). 4a) Bp~ Ey = kT In(Npsni) = 0.0259 n(1015/1019) = 0.298 eV (b) Ej- Eg = kT In(Na/nj) = 0.0259 In(10'6/ 1019) = 0.358 eV (©) Ep Ej = kT In{(Vp-Na)/nj] = 0.0259 In(10!5/10!) = 0.298 ev (@) Ep- Ej = KT In(n/nj) = 0.0388 In(1.21 x 10!4/5 x 1013) = 0.034 eV (e) Ep- Ej = kT In(n/nj) = 0 Gi) 0.57 0.55) (a) and (c) ()0.55} 1015 0.53} 0.49 Ey Ey @ (©) 2.19 (@) A sample MATLAB program that computes n, p, and Ep-Ej given T, Np, and Na is listed below. The program incorporates the nj(T) computation given in the solution to Exercise 2.4a. MATLAB program script... Scalculation vf n,p and EF-Ei (nondegenerate, fully ionized) ‘Initialization clear; close Specification of basic parameters T=input ("Please input the temperature, T, in Kelvin... nput ("Please input NA(cn-3)...NA="); nput ("Please input ND(cm-3)...ND="); ke8.617e-5; Nnet=ND-NA; 'ni computation (from Exercise 2.4a solution) Sconstants and T-range 510019; 0074; Walue was adjust to match SéG ni (300K) value 'Band Gap vs. T ek = 7300-4; 36: EG=EGO-a.* (T.*2)./ (TH) % SEffective mass ratio (anr-mn*/m0, mpr=mp*/m0) +028 + (6.1le-4) AT - (3.09e-7) .*7.927 1610 + (7.83e-4) 7 = (4.46e-7) 47.°23 Actual ni calculation ni=A.* ((T./300) .*(1.5)) .* ((mnr.*mpr) .* (0.75) ) -*exp (~(EG-Eex) ./ (2 2k.) 2-18Computation of n, p, and EF-Ei if Nnet—=0, elseif Nnet>0, neNnet/2+sqrt ( (Nnet /2) *2#ni*2) : Printout of results format compact; a Pp Bet (b) Results obtained employing the part (a) program are tabulated below. The Problem 2.17/2.18 part (d) and (e) results are slightly different because of inaccuracies in reading the clevated temperature values of nj from Fig. 2.20. Part| T (K) | Na(cmm3)| Np(cm3)|_ nj (em3)_|_n(env3)_|_p (cnv3)_| Er-Ei (eV) (a) | 300 0 1o!5__| 1.00x1010 | 1.00x10!5 |_1.00x105 | 0.298 (by | 300 | 10'6 0 | 1.00x1079 | 1.00x104 | 1.00x1016 [0.357 ©) | 300 | 9x10!5 | 10!6 | 1.00x10!0 | 1.00x10!5 |_1.00x105 | 0.298 _@) | 450 0 10!4 | 4.71x1013 | 1.19x10!4 | 1.87x1013 | 0.0359 () | 650 0 1014 | 1.146x1016] 1.151x1016} 1.141x1016| 2.44104 2.20 ‘There is more than one way to work this problem, with alternative approaches likely to yield slightly different answers. ‘The most straightforward approach is recorded here. At the onset of degeneracy Ep = Ec-3kT n-type semiconductor Ep = Ey+3kT ‘p-type semiconductor and the maximum nondegenerate carrier concentrations are therefore 2-19n= NceEr-ENT = Nee p = Ny e&r- ERAT = yy e-3 However n= Np n-type Si at room T ~ it 2 --p-type Si at room T Thus 3.22 x 1019) e-3 = 1.60 x 10!8/em3 = (1.83 x 1019) e3 = 9.11 x 10!7%/cm3 Nc and Ny were computed using the expression Ne,y ~ (2.51 x 10!/em3)(rin,p"/iry)3 and the effective mass values in Table 2.1. The cited computational relationship is given in the text below Eq.(2.14b). Also see Problem 2.13. 2.21 ‘The MATLAB program listed below computes Ep — Ej vs. Na or Np up to the nondegenerate limit (Va or Np = 1018/cm3) and yields results very similar to Fig. 2.21. MATLAB program script... SEF-Ei versus NA or ND (nondegenerate, fully ionized, 300K) clear; close Sspecification of basic parameters kT=0.0259; 20e10; ogspace (13,18); 8NBEND or NA ‘Computation of EF-Ei versus doping EFAD=kT.*10g (NB. /ni) ; EFLA=-EFAD; SPlot out Fermi level positioning semilogx(NB, EFiD, NB, EFiA); axis ([1.0e13,1.0218,-0.56 0.56]); grid; xlabel('ND or NA‘); ylabel(*EF-Ei'); text (1.0e14,0.30, ‘Donor'); "text (1.0e14,-0.30, Acceptor"); 2-20