3.12 Determine the positon ofthe intrinsic Fermi energy level with respect tothe center of Ur Pandgsp for (a) silicon, (b) germanium, and (c) gallium arsenide. [Use the density of states effective masses given in Appendix B.] 313) (@) The carver effective masses in a particular semiconductor are m= 1.1S5mp and ‘m= 0.38mo, Determine the positon ofthe intrinsic Fermi level wth respect tothe ‘midap energy. (b) Repeat part (a) ifm; = 0.082m and m= 1.15mo, 34 Caleulate Er, with respect to the center of the bandgap in silicon for T = 200,400, and 600 K. SAS" Plot the intrinsic Fermi energy fy, with respect othe center ofthe bandgap in GaAs for 200 E. where C, is a constant Section 3.2. Dopant Atoms and Energy Levels 3.18 Calculate the ionization energy and radius ofthe donor electron in germanium using the Bohr theory. (Use the density of states effective mass asa first approximation ) 3.19 Repeat Problem 3.18 for gallium arsenide, Section 3.3 The Extrinsic Semiconductor 32) The electron concentration in silicon is no = 3 x 10* em-3. (a) Determine po (6) Is this material n or p type? (c) Determine Er ~ E,. 321) Determine the values of ig and py for silicon at 7” = 300 K if the Fermi energy is 0.22 eV above the valence band energy. Section 3.5 Charge Neutrality 334° Consider a germanium semiconductor at rium concentrations of ny and po for (@) Nq 5x 10 em-3, N, =0, 338° The Fermi level in n-type silicon at T = 300 K is 245 meV below the conduction band and 200 meV below the donor level. Determine the probability of finding an «lectron (a) in the donor level and (6) ina state in the conduction band KT above the 7 9 AAG nen 300 K. Calculate the thermal equilib- 10! em~*, Nz =0, and (6) Ng = conduction band edge. 336) Determine the equilibrium electron and hole concentrations in silicon for the follow- ing conditions: (@) T = 300K, Ny =2 x 10" em™3, Ny =0 0, Ne = 10! em™> = 300K, Ny = N, = 10" em? (d) T = 400K, Ny =0, N, = 10! em-? (@) T = 500K, Ny = 10" em, N, 3.37 Repeat problem 3.36 for GaAs. 338) Assume that silicon, germanium, and gallium arsenide each have dopant concentrations of Nz = 1 x 10" em~* and Ny = 2.5 x 10! em? at T = 300 K. For each of the three materials (a) Is this material n type or p type? (b) Calculate ng and pa Section 3.6 Position of Fermi Energy Level XCD Consider germanium with an acceptor concentration of Ny = 10!% em"? and adonor Concentration of Nz =O. Consider temperatures of T= 200, 400, and 600 K. Calculate the postion ofthe Fermi energy with respect to the intrinsic erm level at these temperatures, 350 Consider germanium at T = 300 K with donor concentations of N, and 10'* cm-3, Let N, = 0. Calculate the posities stk 10", 10",