1N4148 / 1N4150 / 1N4448 / 1N914B

Diodes

Switching diode
1N4148 / 1N4150 / 1N4448 / 1N914B
∗This product is available only outside of Japan.

!Applications !External dimensions (Units : mm)

High-speed switching

!Features CATHODE BAND (BLACK)

1) Glass sealed envelope. (GSD) Type No. φ 0.5±0.1

2) High speed.
3) High reliability. C A

φ 1.8±0.2
29±1 3.8±0.2 29±1

!Construction ROHM : GSD

Silicon epitaxial planar EIAJ : −
JEDEC : DO-35

!Absolute maximum ratings (Ta = 25°C)

IFSM
VRM VR IFM IO IF 1µs P Tj Topr Tstg
Type
(V) (V) (mA) (mA) (mA) (A) (mW) (°C) (°C) (°C)

1N4148 100 75 450 150 200 2 500 200 −65~+200 −65~+200

1N4150 50 50 600 200 250 4 500 200 −65~+200 −65~+200

1N4448
(1N914B) 100 75 450 150 200 2 500 200 −65~+200 −65~+200

!Electrical characteristics (Ta = 25°C)

VF (V) BV (V) Min. IR (µA) Max. Cr (pF) trr (ns)
Type @25°C @150°C VR=6V
@ @ @ @ @ @ @ @ @ @ @ @ @ @ VR=0 IF=10mA
0.1mA 0.25mA 1mA 2mA 5mA 10mA 20mA 30mA 50mA 100mA 200mA 250mA 5µA 100µA VR (V) VR (V) f=1MHz RL=100Ω
0.025 20
1N4148 75 100 50.0 20 4 4
1.0 5.0 75
0.54 0.66 0.76 0.82 0.87
1N4150 − 50 0.1 50 100.0 50 2.5 4
0.62 0.74 0.86 0.92 1.0
0.62 0.025 20
1N4448
− 100 50.0 20 4 4
(IN914B) 5.0 75
0.72 1.0
The upper figure is the minimum VF and the lower figure is the maximum VF value.
 1N4148 / 1N4150 / 1N4448 / 1N914B
Diodes

!Electrical characteristic curves (Ta = 25°C)

100 3.0

CAPACITANCE BETWEEN TERMINALS : CT (pF)

50 100°C f=1MHz
3000 2.5
FORWARD CURRENT : IF (mA)

REVERSE CURRENT : IR (nA)

20 1000
70°C 2.0
10
300
5 1.5
50°C
100
2
30 1.0
Ta=25°C
1
°C
25°C

Ta=25°C
Ta=75°C

Ta=−25

10 0.5
Ta=1

0.5

3
0.2 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 0 5 10 15 20 25 30
FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V)

Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between

terminals characteristics

3 100
REVERSE RECOVERY TIME : trr (ns)

PULSE
VR=6V
SURGE CURRENT : Isurge (A)

50 Single pulse
Irr=1/10IR

2 20

10

1 5

0 1
0 10 20 30 0.1 1 10 100 1000 10000
FORWARD CURRENT : IF (mA) PULSE WIDTH : Tw (ms)

Fig. 4 Reverse recovery time Fig. 5 Surge current characteristics

characteristics

0.01µF D.U.T.

5Ω
PULSE GENERATOR SAMPLING
50Ω
OUTPUT 50Ω OSCILLOSCOPE

INPUT

100ns

OUTPUT
trr
0
0.1IR
IR

Fig. 6 Reverse recovery time (trr) measurement circuit

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.