*ALL INDIA 1" RANK 17 TIMES IN GATE* *ALL INDIA 2™ RANK 10°TIMES IN GATE* Cla KS ZN fers excatant coaching fr: GATE, IES, JTO, APGENCO, APTRANSCO, APPSC, CPWD ot For farther deta contact _ACE EDUCATIONAL ACADEMY 20,24, Rake Pl, Fn, 20 ABB re Malar Schont New Gate) Fea opal ne Myc —S00 016 ‘Ams IDERDADS 00001 Peta esas = 4208, 275007 ww aceenagacademy.com ema ace gatequrugigna.com SYLLABUS lectronie Devices: Enersy bands in sion, inne ad extrinsic ‘con, Cor transport In sicon: atusion curent, dif crret, ‘motility, and ess. Generation and recombination of carers. pn Juneben diode, Zener dode, tunnel ode, BIT, FET, HOS copactor, MOSFET, LED, psn ond avalanche photo diode, Basis of LASERs Device eenology: integrated crcults Fabrication process, odin, uso, fon imparaton, pheolthegraghy, o-tib, ptub and twit (0S processELECTRONIC DEVICES CONTENTS SNo. Chapter Page No. 1, | Semi Conductor Theory o1-a 02. |p-N Junction Theory and Characteristics 32-56 03, | Transistor Theory (BUT,FET) 57-90 (04, | Basics of C Bipolar, MOS and CMOS Types | 91-106 05, | Basics of Opto Electronics 105-114 06,. | Se Assessment Questions 11-126, Pr “GATE, DRDO, PSUs & IES Managing Director Y.V. Gopala Krishna Murthy hi CHAPTER =1 ‘SEMICONDUCTOR fHOERY (Glzctrons and hoes in sonicmitrs, cassis. _mechanis of cent flow in sic, al effet) + Prey sone tance at, 1+ Alonso ite chee inl clcons, hich we cole ea 1+ Aveaofere cence pstvely rgd eles. 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