𝑉𝑖𝑛 = (𝑅𝐿 + 𝑅).

𝐼𝐺𝑇 + 𝑉𝐺𝑇

𝑉𝑚 𝑆𝑒𝑛(𝑤𝑡) = (𝑅𝐿 + 𝑅). 𝐼𝐺𝑇𝑚𝑖𝑛 + 𝑉𝐺𝑇𝑚𝑖𝑛

Si : 𝛼 = 90 = 𝑤𝑡

200√2 = (𝑅𝐿 + 𝑅)𝐼𝐺𝑇𝑚𝑖𝑛 + 𝑉𝐺𝑇𝑚𝑖𝑛

200√2 − 0.8𝑣
(𝑅𝐿 + 𝑅) =
2𝑚𝐴

(𝑅𝐿 + 𝑅) = 155𝐾Ω

𝑉𝐺𝑚𝑎𝑥 = −5𝑣

El diodo limita la tensión inversa en el gate:

𝑉𝐵𝑇𝑚𝑖𝑛 0.8
𝑅𝐺 = = = 400Ω
𝐼𝐺𝑚𝑖𝑛 2𝑚𝐴

Si: 𝛼 = 30

200√2𝑆𝑒𝑛(30) − 0.8
𝑅𝐿 + 𝑅 =
2𝑚𝐴

𝑅𝐿 + 𝑅 = 77.5𝐾Ω

Como: 𝑅𝐿 = 1𝐾Ω

𝑅 = 76.5𝐾Ω

Cuando el SCR no conduce (OFF):

𝛼 = 𝜑 + 𝛽 ≤ 0/ 𝛽 = 0

𝑉𝐹 + 𝑉𝐺𝑇𝑚𝑖𝑛
𝛽 = 𝑠𝑒𝑛−1 = 0.2
𝑉𝑚
√(𝑊𝐶𝑅)2 + 1
( )

1 𝑡
𝑉𝑖𝑛 = 𝑖(𝑅𝐿 + 𝑅) + ∫ 𝑖𝑑𝑡
𝑡 0

𝑉𝑚
𝑉𝑐 = 𝑠𝑒𝑛(𝑤𝑡 − ∅)
√(𝑊𝐶𝑅)2 + 1

∅ = 𝑡𝑔−1 (𝑊𝐶𝑅)
 𝑇𝑟
𝛼=𝑇− = 𝑅´𝐶 − 4.15
4
Si: 𝑅´ = 100KΩ y 𝐶 = 0.1𝜇𝐹
180
𝛼 = 5.85𝑚𝑠𝑒𝑔( )
8.3𝑚𝑠𝑒𝑔
𝛼 = 126