Chapter 12 Microwave Amplifier Design

12.1 Two-port power gains

power gains G, GT, GA
12.2 Stability
input and output stability circles, stability criterion
12.3 Single-stage transistor amplifier design
conjugate match, constant gain circle, noise parameters, constant
noise figure circle, LNA (low noise amplifier)
12.4 Broadband transistor amplifier design
balanced amplifier, distributed amplifier, differential amplifier
12.5 Power amplifier
nonlinear operation

12-1 微波電路講義
 12.1 Two-port power gains

Zs
+ transistor +
[S] s L
Vs V1 V2 ZL
- (Zo) -
in out
s in, Pin, Zin out L, PL, ZL
PL
power gain G  (S ,  L )
Pin
Pavn
available power gain GA  (S , S )
Pavs
PL
transducer power gain GT  (S , S ,  L )
Pavs
Pin (in ), Pavs ( s )  Pin in *S
, PL ( L ), Pavn (out )  PL  L *out

12-2 微波電路講義
Discussion
1. Z in
V1  V s  V1  V1  V1 (1  Γin ),
Z s  Z in
Z in  Z o Zs Zo
Γin  , Γs 
Z in  Z o Zs  Zo
Vs Z in V s 1  Γs
 V1  
1  Γin Z s  Z in 2 1  Γ s Γin
 2
2 2
2 1 V1 2 Vs 1  Γs 2
Pin  Ps (1  Γin ) (1  Γin ) 2
(1  Γin )
2 Zo 8Z o 1  Γ s Γin

Vs 1   s
2. V2  S21V1  S22V2 ,V2   LV2 ,V1 
2 1   s  in
Vs S 21 (1   s )
 V2 
2 (1  S 22  L )(1   s  in )
 2
S 21 1   s
2 2 2
1 V2 Vs
PL  Pout (1   L )  (1   L )  (1   L )
2 2 2

2 Zo 8Z o 1  S 22  L 2 1   s  in 2

12-3 微波電路講義
 1  s
2 2
Vs
3. Pavs  Pin in *S

8Z o 1   s 2

S 21 1   s (1   out )
2 2 2 2
Vs S12 S 21 L
Pavn  PL  , in  S11 
 L *out
8 Z o 1  S * 2
1   s  in
2
1  S 22  L
22 out

S 21 1   s
2 2 2
Vs
 Pavn 
8Z o 1  S11 s 2 (1   out 2 )

S 21 (1   L )
2 2
PL
4. G ( S ,  L )  
Pin (1  in 2 ) 1  S 22 L 2

S 21 (1   s )
2 2
P
GA ( S ,  s )  avn 
Pavs (1   out 2 ) 1  S11 s 2

S (1   s )(1   L )
2 2 2
P
GT ( S ,  s ,  L )  L  21  21 , if  s   L  0)
2
( S
1   s in 1  S22 L
2 2
Pavs

12-4 微波電路講義
5.
input output
Zo transistor
matching matching Zo
[S]
circuit Gs circuit GL
Go

s in out L
1  s 1 L
2 2

GT   Gs GoGL
2
S21
1   s in 1  S 22 L
2 2

1  L
2
1
in  *s ,  out  *L  GT max 
2
S21
1  s 1  S 22  L
2 2

1  s 1 L
2 2

S12  0, unilateral transducer gain GTU 

2
S21
1  S11 s 1  S22 L
2 2

1 1
 s  S11* , L  S 22  GTU max   selection of transistor
* 2
S 21
1  S11 1  S22
2 2

微波電路講義
12-5
6. Ex.12.1 A Si BJT@1GHz
S 11  0.38  158, S 12  0.1154, S 21  3.580, S 22  0.4  43
Zs=25, ZL=40, Zo=50
Z  Zo Z  Zo
s  s  0.333,  L  L  0.111
Z s  Zo Z L  Zo
S S 
 in  S11  12 21 L  0.365  152
1  S 22  L
S S 
 out  S 22  12 21 s  0.545  43
1  S11 s
G  13.1, GA  19.8, GT  12.6
P P P P
GT  L  L  G , GA  avn  L  GT
Pavs Pin Pavs Pavs

12-6 微波電路講義
 7. conjugate match using FET equivalent circuit (S12=0, or Cgd=0)

Ri jX
Ri
+
Vs Rds Cds jB Rds
Vgs Cgs gmVgs
-

s in out L
1
Z in  Z S*   X , Z out  Z L*  wCds   B
wCgs
Vs 1
Vgs 
2 Ri jwC gs
1 1
( g mVgs ) 2 Rds
PL 2 2 g m2 Rds Rds fT 2 gm
GTU     ( ) : 6 dB / octave, f 
2C gs
2 2 T
Pavs 1 1 2 4 w R C 4 R f
( Vs ) / Ri i gs i
2 2

12-7 微波電路講義
12.2 Stability (S, f)
unconditional stable  Z s ,Z L  in  1, out  1
conditional stable  Z s ,Z L  in  1, out  1
Discussion
1. S 12  0, Γin  1, Γout  1  S 11  1, S 22  1

2. S12 S21 L
in  S11   1  output stability circle  L  CL  RL
1  S 22  L

( S 22  S11
* *
) S12 S21
CL  , RL 
S 22   S 22  
2 2 2 2

S12 S21 s
 out  S 22   1  input stability circle  s  Cs  Rs
1  S11 s

( S11  S 22
* *
) S12 S21
Cs  , Rs 
S11   S11  
2 2 2 2

(derivation in p.565)
12-8 微波電路講義
3. conditional stable
|S11|<1 |S11|>1
L-plane |in|=1 L-plane
output
stability
CL RL circle
 L =0
|in|<1

|S22|<1 |out|=1 |S22|>1

s-plane s-plane
input
stability
Cs Rs circle
S  0
|out|<1
微波電路講義
12-9
4. unconditional stable, stability factor K

RL
Rs
Cs CL
|S22|<1 |S11|<1
CS  RS >1 CL  RL >1

Cs CL
Rs RL

unconditional stable S11  1, S 22  1, Cs  Rs  1, CL  RL  1

1  S11  S22  
2 2 2

   1, K   1,   det[ S ] :Rollet's condition

2 S12 S21
(derivation in p.568 and 569)
 K , selection of transistor 12-10 微波電路講義
5. In practice, one should consider stability over a wide bandwidth for
the possible oscillations.
6. Ex.12.2 Triquint T1G6000528 @ 1.9GHz, Zo=50Ω
S11  0.869  159, S12  0.031  9, S 21  4.2561,
S 22  0.507  117
  0.336  1, K  0.383  1
input stability circle Cs  1.09162, Rs  0.205
output stability circle CL  1.59132, RL  0.915
(p.570, Fig.12.6)

12-11 微波電路講義
12.3 Single-stage transistor amplifier design

• conjugate match (maximum transducer power gain)

if   1, K  1
 input and output simultaneously conjugate match in  *s ,  out  *L
1 L
2
1 S 21
 GT  GT max   ( K  K 2  1)
2
S 21
1  s 1  S 22  L
2 2
S12

 2  4 C2
2 2
S S  B B
*s   in  S11  12 21 L   L 
2

1  S22  L 2C2

B1  B12  4 C1
2
S12 S 21 s
*L   out  S22   s 
1  S11 s 2C1
B1  1  S11  S 22   , B2  1  S 22  S11  
2 2 2 2 2 2

C1  S11  S22
*
, C2  S 22  S11*
(derivation in p. 571 and 572)
12-12 微波電路講義
Discussion
1. linear amplifier design procedure
if |<1, K>1 then uses input and output simultaneously conjugate
matches for GTmax
if K<1 then draws input and output stability circles to see if input
and output simultaneously conjugate matches possible, otherwise
selects proper s and L for gain or noise figure considerations.
2. S  0    S * ,   S *
12 s 11 L 22

1 1
GTU max   Gs max S 21 GL max
2 2
S 21
1  S11 1  S 22
2 2

3. Ex.12.3 FET @ 4GHz

S11  0.72  116, S12  0.0357, S21  2.676, S22  0.73  54
  0.488  1, K  1.195  1  s  0.872123,  L  0.87661
GT max  6.2  8.3  2.22  16.7dB

12-13 微波電路講義
 s*  0.872  123
G
1 L*  0.876  61

s* L*
1. y=1-j3.5
2. y=j3.5
2

0.12 0.206

GT

0.206 0.206 -RL

s* L*
f
frequency response (p.575, Fig.12.7)

12-14 微波電路講義
• constant gain circle (S12=0, unilateral assumption)
1  s 1 L
2 2

GT  , S12  0  in  S11

2
S 21
1   s in 1  S 22  L
2 2

1  s 1 L
2 2
1 1
Gs  , Gs max  , GL  , GL max 
1  S11 s 1  S11 1  S22  L 1  S22
2 2 2 2

Gs
gs   constant gain circle in S -plane S  CS  RS
Gs max
GL
gL   constant gain circle in  L -plane  L  CL  RL
GL max
1  g s (1  S11 )
2
g s S11*
Cs  , Rs 
1  (1  g s ) S11 1  (1  g s ) S11
2 2

1  g L (1  S22 )
* 2
g L S 22
CL  , RL 
1  (1  g L ) S 22 1  (1  g L ) S22
2 2

(derivation in p. 576 and 577)

12-15 微波電路講義
 Discussion
1. Gs=0dB and GL= 0dB circles pass through the Smith chart center.
1  s
2
1
Gs  ( 0dB)  1, Gs max  , * *
1  S11 s
2
1  S11
2 S11 ,Gs max S 22 ,GL max
1  L
2
1
GL  ( 0dB)  1, GL max 
1  S 22  L 1  S22
2 2

Gs 1
gs    1  S11  1  g s  S11 ,
2 2

Gs max Gs max
GL 1
gL    1  S 22  1  g L  S 22
2 2

GL max GL max
GS=0dB GL= 0dB
constant gain circles S  Cs  Rs ,  L  CL  RL
(1  S11 ) S11* 1  g s (1  S11 ) S11 (1  S11 )
2 2 2
g s S11* S11* S11
Cs    , Rs   
1  (1  g s ) S11 1  S11 1  S11 1  (1  g s ) S11 1  S11 1  S11
2 4 2 2 4 2

(1  S22 ) S22 1  g L (1  S 22 ) S 22 (1  S 22 )
* *2 * 2 2
g L S 22 S 22 S 22
CL    , RL   
1  (1  g L ) S 22 1  S 22 1  S 22 1  (1  g L ) S 22 1  S 22 1  S 22
2 4 2 2 4 2

 Cs  Rs , CL  RL   S   L  0

12-16 微波電路講義
2. Centers of constant gain circles are distributed along the lines from
S11* and S22* to the Smith chart center, respectively.
S11* ,GS max *
S22 , GL max
g s S11* *
g L S22
Cs  , CL 
1  (1  g s ) S11 1  (1  g L ) S22
2 2

g s  1, g L  1  Cs ,1  S11* , CL ,1  S 22
*

S11* *
S22
Gs  1, GL  1  Cs ,2  , CL ,2  GS=0dB GL= 0dB
1  S11 1  S22
2 2

1 Re(Cs ,1 ) 1 Re(Cs ,2 ) 1 Re(CL ,1 ) 1 Re(CL ,2 )

 tan  tan , tan  tan
Im(Cs ,1 ) Im(Cs ,2 ) Im(CL ,1 ) Im(CL ,2 )

1 GT 1
2.  
(1  U ) 2 GTU (1  U ) 2
S11 S 21 S12 S 22
U unilaterial figure of merit
(1  S11 )(1  S 22 )
2 2

12-17 微波電路講義
 3. Ex.12.4 design an amplifier with GT=11dB @ 4GHz
S11  0.75  120, S12  0, S21  2.580, S22  0.6  70
GTU max  3.6  8  1.9  13.5dB
choose GTU  2  8  1  11dB

S11* ,GS max *

S22 , GL max 1. s  0.33120, *s  0.33  120
2.  L  0.2270, *L  0.22  70
Gs=2dB GL=1dB 0.179 0.045

2 GT
1
*s *L 0.1 0.432
-RL
s* L*
f
frequency response (p.579, Fig.12.8)

12-18 微波電路講義
• constant noise figure circle
for a two-port amplifier
2
RN 2 4 RN  s   opt
F  Fmin  Ys  Yopt  Fmin  2
Gs Z o (1   2 ) 1  
s opt

noise parameter:Fmin , Yopt , RN equivalent noise resistance of transistor

2
 s   opt F  Fmin 2
N  1   opt
1  s
2
4 RN / Z o
 constant noise figure circle s  CF  RF
2
 opt N ( N  1   opt )
CF  , RF 
N 1 N 1
(derivation in p. 580 and 581)

12-19 微波電路講義
 Discussion
1. Ex.12.5 design a LNA with F=2dB and max. gain @ 4GHz
S11  0.6  60, S12  0.0526, S21  1.981, S22  0.5  60
Fmin  1.6dB, opt  0.62100, RN  20
U  0.059
1 GT 1
0.89     1.13,0.5dB  GT  GTU  0.53dB
(1  U ) 2
GTU (1  U ) 2

F  2dB  C F  0.56100, RF  0.24

Gs  1.7 dB  Cs  0.5860, Rs  0.15  s  0.5375
1
L  S 22  0.560  GL   1.25dB  GTU  1.7  S 21  1.25  8.53dB
* 2

1  S 22
2

s 0.226 0.25
L

F=2dB Gs=1.7dB
L* 0.144 0.136
s*
s* L* 微波電路講義
12-20
2. Approach for single-stage linear amplifier design
Given transistor S-parameters

otherwise K>1, úΔú1

Calculate K and Δ
using eqs. (11.28) and (11.29)

Plot stability circles Perform conjugate match design

plot input stability circle in ΓS-plane using eq. (11.40a) to calculate ΓS
plot output stability circle in ΓL-plane using eq. (11.40b) to calculate ΓL

Design input and output matching Design input and output matching
circuits by properly selecting circuits
ΓS and ΓL based on constant gain
circle consideration

Verify the stability over a wide

bandwidth
No Yes No

Design DC biasing circuits

and verify the stability again

Perform circuit layout

No No
Verify realizability
Yes
Circuit implementation

12-21 微波電路講義
3. Two approaches for multi-stage amplifier design
(1)

Zo Zo Zo Zo

(2)

Zo Zo
Zout Zin
12-22 微波電路講義
12.4 Broadband transistor amplifier design

• Balanced amplifier

a1 a1 A b2 A
b1 b1 A a2 A
S A 
a1 B b2 B b2
b1 B a2B a2
S B 

 S11 S12  1  S11A  S11B  j (S12 A  S12 B ) 

 S S ú  2   j ( S  S ) ( S  S ) ú
 21 22   21 A 21B 22 A 22 B 

12-23 微波電路講義
 Discussion
1. Derivation of S-parameters 1 2 b
a1 1A

 1 j   1 j  b1 a1 A
 0 2 2
0 ú  0 2 2
0 ú
 ú  ú b1B
 1  j ú  b1   1  j ú  a1  4
 2 0 0  ú
2 ú  a1 A ú  2
0 0  ú
2 ú b1 A ú 3 a1B
90 hybrid 
o
ú,  ú
j  ú
1 ú a1B   j 1 ú b1B ú
 2 0 0  ú 0 0  ú
2ú     2 2ú 0 
 ú  ú
 0 j ú  0 j
0 ú
1 1
0
 2 2 ú  2 2 ú
 1 j 
 0 2 2
0 ú
b2 A 1 2
 ú
 a2 A   1  j ú b2 A  a2 A
S12 A, B   a1 A, B    ú  2  ú
0 0
 b1 A, B   S11 A, B 2ú 0 ú b2 B
b ú   S ú  ú ,  ú ú a2
 2 A, B   21 A, B S22 A, B   a2 A, B   b2 ú   j 1 ú  a2 ú a2 B
 ú  0 0  ú 4 3 b2
 a2 B ú  2 2 ú b2 B ú
ú
 0 j
0 ú
1
 2 2 ú
12-24 微波電路講義
 1 j
b1  b1 A  b1B
2 2
1 j
 ( S11Aa1 A  S12 Aa2 A )  ( S11B a1B  S12B a2 B )
2 2
1 1 j j j 1
 ( S11A a1  S12 A a2 )  ( S11B a1  S12B a2 )
2 2 2 2 2 2
1 j
 ( S11A  S11B )a1  ( S12 A  S12B )a2
2 2
j 1
b2  b2 A  b2 B
2 2
j 1
 ( S21Aa1 A  S22 Aa2 A )  ( S21B a1B  S22B a2 B )
2 2
j 1 j 1 j 1
 ( S21A a1  S22 A a2 )  ( S21B a1  S22B a2 )
2 2 2 2 2 2
j 1
 ( S21A  S21B )a1  ( S22 A  S22B )a2
2 2

12-25 微波電路講義
2. amplifier A=amplifier B, good i/p and o/p match
 good stability

 0  jS12 A 
 jS ú
 21A 0 

3. high reliablity and less tuning work

4. I/p and o/p matching are improved by two 90° hybrids, and
mismatch reflections are absorbed by two resistors.
5. If one transistors fails, gain drops 6dB.
 graceful degradation
6. disadvantages: larger size and lower efficiency
7. Bandwidth is limited by two hybrids.

12-26 微波電路講義
8. Power amplifier application

1/2W 1/4W 1W
1/4W 1W

6dB
1/4W 1W 2W
6dB

9. Balanced amplifiers can be implemented in a tree structure with a

very high power in radar and communication applications.
10. Ex 12.7, two amplifiers of ex.12.4 are implemented as a balanced
amplifier to improve its i/p and o/p return loss at 4 GHz. Then, the
stub lengths are optimize to give better matching and gain flatness
from 3 to 5 GHz bandwidth.
frequency response (p.588, Fig.12.11)
12-27 微波電路講義
 • Distributed (traveling wave) amplifier
TEM line “extreme wide operation bandwidth”

cut off frequency

1
fc 
 LC

FET equivalent
circuit

drain line

gate line
12-28 微波電路講義
 ld

Io
gm Vc1

lg
+
Vi +
-
Vc1
- Lg
Discussion Zg 
C g  C gs / lg
1. unit cell of gate line
jwC gs / lg
g  jwLg ( jwC g  )
1  jwRi C gs
Lg
G=1/Rilg small loss w2 Ri Z g C gs2 C gs
Cg   jw Lg (C g  )
jB=jwCgs/lg wRi C gs 1 2lg lg
  g  j g
12-29 微波電路講義
(derivation of 1)
Lg
jwC gs / lg G=1/Rilg
Z  jwLg , Y  jwC g 
1  jwRi C gs Cg
jB=jwCgs/lg
Z small loss Lg
Zg  
Y wRi C gs 1 C g  C gs / lg
jwC gs / lg wRi C gs 1
jwC gs (1  jwRiC gs )
 g  ZY  jwLg ( jwC g  )  jwLg [ jwC g  ]
1  jwRi Cgs lg

C gs ( jw)3 Lg Ri C gs2
 ( jw) Lg (C g 
2
)
lg lg
1 1 1
1 
( a b ) 2  a 2  a 2 b 3 2
2 Cgs
1 ( jw) Lg Ri C gs / lg
 ( jw) Lg (Cg 
2
)
lg 2 jw Lg (C g  C gs / lg )

w2 C gs Lg Ri Cgs2 Cgs w2 Ri Cgs2 Z g

 jw Lg (Cg  )  jw Lg (C g  )   g  j g
lg 2 Cgs lg lg 2lg
Cg 
lg

12-30 微波電路講義
2. unit cell of drain line Ld
Zd 
Cd  Cds / ld
Ld
1 C
d  jwLd [  jw(Cd  ds )]
Rds ld ld
Cd G= jB = small loss Zd C
  jw Ld (Cd  ds )
1/Rdsld jwCds/ld Id 2 Rds ld ld
  d  jd
3. o/p current
1 N 1
I o    I dn e ( N n )  d ld , I dn  g mVcn ,Vcn  Vi e
 ( n 1)  g lg
( )
2 n 1 1  jwRi Cgs
N l
g mVi  N  d ld  g lg N  n (  g lg  d ld ) g mVi e g g  e N  d ld
 Io   e e e 
2 n 1 2 e g lg  e d ld

12-31 微波電路講義
 (derivation of 2) Ld
1 C
Z  jwLd , Y   jw(Cd  ds )
Rds ld ld
Z small loss Ld
Cd G= jB =
Zd   1/Rdsld jwCds/ld Id
Y Rds ld 1 Cd  Cds / ld
1 C C jwLd
 d  ZY  jwLd [  jw(Cd  ds )]  ( jw) 2 Ld (Cd  ds ) 
Rds ld ld ld Rds ld
1 1 1
1 
( a b ) 2  a 2  a 2 b
2 Cds 1 1 jwLd
 jw Ld (Cd  )
ld 2 ( jw) 2 Ld (Cd  Cds / ld ) Rds ld

Cds 1 Ld 1 C 1 1 Ld
 jw Ld (Cd  )  jw Ld (Cd  ds ) 
ld 2 Rds ld Ld (Cd  Cds / ld ) ld 2 Rds ld Cd  Cds / ld
Cds 1 Zd
 jw Ld (Cd  )   d  jd
ld 2 Rds ld

12-32 微波電路講義
 (derivation of 3)

1 N 1
I o    I dn e  ( N  n )  d ld , I dn  g mVcn ,Vcn  Vi e
 ( n 1)  g lg
( )
2 n 1 1  jwRi Cgs
g N
g mVi  N  d ld  g lg N  n (  g lg  d ld ) r (1  r N )
 Io   m
2
V
n 1
cn e  ( N  n )  d ld

2
e e e
n 1
,r 
n

1 r
 ( N 1)(  g lg  d ld )  (  l  d ld )
g V  l e e g g e  d ld
  m i e  N  d ld e g g  (  l  l )
  d ld
2 e g g d d 1 e
 ( N 1)(  g lg  d ld )  (  g lg  d ld )
g V  l e e
  m i e  ( N 1)  d ld e g g  g lg
2 e  e d ld
N l
g mVi e g g  e  N  d ld

2 e  g lg  e  d ld

12-33 微波電路講義
4. For matched i/p and o/p ports
2
Io Zd 2
2  N  g lg  N  d ld

2
Pout 2 I Z Z g Z Z e e
G   o d g
 m d g
 l
e g g  e   d ld
2 2
Pin Vi Vi 4
2Z g
2
g m2 Z d Z g e  N ( g lg  j g lg )  e  N ( d ld  jd ld )
  (  l  j l )
4 e g g g g  e  ( d ld  jd ld )
under synchronization condition  g lg  d ld (  g  d )
g m2 Z d Z g ( e  N g lg  e  N d ld ) 2
G   g l g d ld 2
,N   G  0
4 (e e )
dG ln( g lg / d ld )
 0  N opt 
dN  g l g   d ld
For a lossless amplifier (R i =0, R ds  ) and if Z d  Z g  Z o
g m2 Z d Z g N 2 gm Zo N 2
G  ( ) ,G  N 2
4 2 微波電路講義
12-34
5. Ex.12.8 Zd= Zg = Zo=50, Ri=5 , Rds=250 , Cgs=0.3pF,
gm=30mS
w2 Ri C gs2 Z o
 g lg   0.1@16GHz
2
Zo
 d ld   0.114@16GHz
2 Rds
 N opt  9.4, frequency response (p.593, Fig.12.16)

N=16
G N=8
(dB)
N=4 16 GHz
N=2

f
12-35 微波電路講義
 • Differential amplifier
2
 0 
0 1 1 0   0    ja ú
  ú
1úú  0 úú  2 ú
1
 j 1 0 0

2 1 0 0 1 ú  0 ú  ja ú
 ú ú  ú
0 1 1 0  a   2 ú 3
 0 ú
  4
balun

Vi
Vgs 
1  j Ri C gs
RD Rds g m RD Rds
Vo   g mVgs  Vi
RD  Rds (1  j Ri C gs )( RD  Rds )
Vo  (Vo ) g m RD Rds
Ad  =
Vi  (Vi ) (1  j Ri C gs )( RD  Rds ) output swing and fT doubled

12-36 微波電路講義
 11.5 Power amplifiers
• nonlinear operationS(input power, f, DC, T, ZL)

FET nonlinear S G D
equivalent
circuit (large-signal
S-parameter)

Discussion
1. power amplifier characteristics: efficiency, gain, intermodulation
product, thermal conduction
Pout  Pin
power added efficiency PAE 
PDC

12-37 微波電路講義
2. DC bias consideration
Ids Vgs = 0V
high gain
high power
Vgs = - 1V
class A
LNA
Vgs = Vp
Vds
high efficiency
3. design consideration: large-signal source impedance Γs (source-pull
contour) and load impedance ΓL (load-pull contour)

Input [S] Output

Zo
matching Go matching Zo
circuit Gs circuit GL

s in out L
12-38 微波電路講義
 4. Ex.12.9 a transistor has small-signal S-parameters at 2.3GHz as
S11  0.593178, S12  0.009  127, S21  1.77  106, S22  0.958175
For class A operation at VDS  28V and I D  0.6 A, Po  10W , G  16.4dB,
Z SP  10  j 3, Z LP  2.5  j 2.3, design the input and output matching
circuits.

From small-signal S-parameter,   0.579  1, K  2.08  1  unconditional stable

From Z SP and Z LP   SP  0.668187,  LP  0.905  175
From small-signal S-parameter for GT max   S  0.508166,  L  0.954  176
For Pout  10W , Pin  Pout  G  23.6dBm  229mW
Pout  Pin 10  0.229
ηPAE    25%
VI 28  0.6

ADS examples: Ch12_prj

12-39 微波電路講義