“BIG IDEAS IN PowerTech 30 AMPERES PT-751 SILICON NPN TRANSISTOR MAXIMUM RATINGS SYMBOL Pr7511 Collector Base Voltage ve 200v Collector-Emitter Voltage vee 200v Emitter Base Voltage vee tov Peak Collector Current tome 908 D.C. Collector Cureent re 508 Power Dissipation at 25°C Case Temperature Po 350 Power Dissipation at 100°C Case Temperature Pp 200W Operating Junction Temperature Range i -65 to 200°C Storage Temperature Range Ws 65 t0 200°C Thermal Resistance %\o 05° cv Package T0863 ELECTRICAL CHARACTERISTICS {at 25°C unless noted} u sl ou 1 | conbitions D.C. Current Gain® MRE 10 | 40 1g=B0A, Vo D.C. Current Gain* ee s | - 1e=0A, Vop4V Collector Saturation Voltage eae — | 06 |v |ig-50A, 1g-5A Collector Saturation Voltage’ Vee teat) = | 18 |v | g-908, 1g=188 Base Emitter Voltage Vee — | 15 [oy |te2508. vee2v Base Emitter Voltage Vee = | 26 | Vv }icr908, Voe=4v Collector-Emitter Breakdown Voltage” Veeorsus) | 200 | - | ¥ |tc=200mA, tg=0 Collector Cut-off Current reel = | 20 | ma |Vcp=200V. tgg=0 Collector Cut-off Current @ 150°C ‘eso = | 10 } ma |Vcp100V, tgg=0 Emitter Cutoff Current eee = | 10 | ma |VeQ=8V. be Gain Bandwith Product Typ. fe 10 | — | Miz |ig=54, Vog=10V t=100KHz Collector Capacitance Geen = | 1800 | pt | Vog=t0v, f=1MHte Switching Speed Typ. & = | 25 Jos (PowerTech Test Circuit) a = | 3 | os |ige608 & = | 25 | us |igy=10A, tp958 “PW <300,s., 6. < 2%“BIG IDEAS 1N PowéeérTech 500 AMPERES MT-6010 POWERBLOCK POWER SYSTEM MAXIMUM RATINGS SYMBOL MT-6010 Collector-Base Voltage Vceo. 450V Collector-Emitter Voltage Vee 400v Emitter-Base Voltage VeBo tov Peak Collector Current lem” 5008, D.C. Collector Current le 300 Power Dissipation at 25°C Case Temperature Pp 21000 Power Dissipation at 100°C Case Temperature Pp 1200W Operating Junction Temperature Range w 65 to 200°C Storage Temperature Range Ta -65 to 150°C Package PPS-1200 Thermal Resistance 1c o.08°cAW ELECTRICAL SPECIFICATIONS (at 25°C unless otherwise noted) rest svmson | on | max. | unrts | cont’STons 0.6. Current Gain* bre 300 I¢-300A, Vee=av D.C. Current Gain* hee 100 Icr800A, Vee=av Collector Saturation Voltage Voeteat) 15 | y | tc-2008, tpt Collector Saturation Voltage* Vee (sat) 20 oy Ic=500A, 1g-5A. Base Emitter Voltage" Vee 20 | y | tc=3008, voe-av Base Emittr Voltage” Vee ao | y | tcs008, vce-av Collector-Emittr Breakdown Voltages | Vetus) | 400 vo | teesoma Collector Cutoff Curent** lors 2 | ma | Vear450v, Rae~0 Emittr Cutoff Current*** leso 10 | ma | VeB*t0V, to-0 *< 2006. 06<2% ‘fase #1 connected to Bate #2 ++ *Base #2 open circuit INTERNAL FB = 100 ohms, lage = 10 ohms CONNECTION: breed DARLINGTON. Base ease? EMITTER“BIG IDEAS IN PowéerTech 800 AMPERES MT -5004 MT -5005 POWERBLOCK POWER SYSTEM MAXIMUM RATINGS SYMBOL MT-5004 = MT-5005 Collector-Base Voltage Nard 6ov sov Collector-Emitter Voltage Sein cov sov Emir Bas Vole veo ‘ov ‘ov | Peak Collector Current® le 8008 8008 D.C. Collector Current ie 500A 5008 Power Dissipation @ 26°C Pp 1400W 1400W Power Dissipation @ 100°C Pp soow s00w Thermal Resistance %Jo ond cow 0.12" cw Operating Junetion Temp. Range 65 to 200°C 65 t0 200°C Storage Temperature Range 65 t0 150°C 650 150°C Package PPs-1200 PPS-1200 ELECTRICAL CHARACTERISTICS 25°C LIMITS. u TEST TEST SYMBOL mr-soos | urr-s005 | § | conprTions min. | max.[ nun. max. 7 D.C. Current Gain® ire 400} - | ao] - | - 008, Veg=4V | D.C. Current 6 tins too | - | 100 | - | — | 1¢-200A, Vog=av Collector Saturation Voltage Veetay | - | 20 | - | 20] v | tges00a, ig=1.58 Collector Saturation Voltage" Veet) | - | 28 | - | 25 | v | tc-8008, 1g-8.08 Base Emitter Voltage” Ge - | 25] - | 25 | v | tc-s00A, vee=av Base Emitter Voltage” Nae - | 30] - | 30] v | t¢-8008, vog=av Collector-Emitter Voltage" 8 Veeisu) | 6 | - | 80 | - | v | Ig=200ma, Collector Cutoff Current* eee ~ | 1 | - | - | ma} veg=60v, Rge=0 Collector Cutoff Current** fees ~ | = | = | 15 | ma} Vg=80v, Rge=0 Emitter Curott Current *** Ae - | 5 | - | 5 | ma | Veget0v, tog =0 + | PPS — 1200 ila max. T 0.25 PLACES“BIG IDEAS IN PowerTech sO AMPERES 2N5926 PT - 7507 PT - 7508 SILICON NPN TRANSISTOR FEATURES: Veetant O6V@50A hee. Smin@ 9A Isa, ses 12A@ 100 Veet esa V2V@EOA tyeeeeceecereeees 2neee Esp ses 6 Joules SAFE OPERATING AREA JEDEC T0-63 PKG. PowerTech’s transistors offer high current capability, high breakdown voltage and the lowest available saturation voltage. They have exceptional resistance to both forward and reverse second breakdown. This unique combination of device char acteristics makes them particularly suited for a wide variety of high current applications, which include series and switching regulators, motor controls, servoamplifiers and power control circuits. The transistors will provide outstancing performance when used as replacements for paralleled lower current devices, resulting in considerable reductions in weight, space and circuit complexity, Their reliability is assured through 100% power testing at 5OV, 4 @ 100°C case temperature. These tran- sistors exceed the requirements of MIL-$-19500 and are well suited for the most severe military-zerospace applications. MAXIMUM RATINGS SYMBOL PT-7507 2N5926 PT-7508 Collector-Base Voltage Vena 120v 150 178V Colleetor-Emitter Voltage VEO tous) 100v 120V 150V Emitter-Base Voltage reset 10V Peak Collector Current i 908 D.C. Collector Current is 50A Power Dissipation @ 25°C Po 350W Power Dissipation @ 100°C. Py 200w ‘Thermal Resistance Bo 08° cw Operating Temperature Range 65 to 200°C Storage Temperature Range 65 10 200°CELECTRICAL CHARACTERISTICS 25°C LIMITS ¥ TEST sympoL [_pt7s07_| _2N5926 P17508 | 1 TES t CONDITIONS MIN.|MAX.| MIN. | MAX. | MIN.| MAX.| 5 D.c. Current Gain* tee | 10] 40 | w [40 [10 [40 | - [i= 50, Vee -2v .c. Current Gain? tee JS |-] 8 | - [8 | - | - [tp = 900. \e =4v Collector Sotoration Volts:*| Yor gay | | 060] - | 0.60] - | 0.60 | v |ig=50A,lp ~ 54 Cotter Saturation Vott."| Vor aay | -| 15] -]18 | - [45 | v[ig=o0atg = tea Bose Emitter Voltage" | Yor ~ [a2] -fu2 | -]2 | ¥ Jig = savor = Base Emitter Voltages | Voe -|25| -|es | -]2s | v|tc~ o0A.vee - collecter-Emitter Vottage™ | Veco ux) | 100) - | 120] - | 150] - | v}ig = 200m, jy=0 collector Cutott Current | tego -[2 | -| - | -] - [ma] %p = 120. tes collector Cutott Current | Iggy -| =] -fe | =] - |ma] veg - 180¥, tes rotlector Cutott Current | ep =| -| =| - | -]2 [ma] ves = 175v, tes = 0 collector Cutoff Current @ 150°C lopo ecto ees (E(on ee Emitter Cutoff Current Teach eee eles 4 JGain Bandwidth Product (yp) ‘ iy | ete collector Capacitance | aap =| 1200] = | 1800] - switching Speed (Typ.) | -| 25] -| 2s | - | 28 fuse] c= soa, (PowerFech Test Circuity | 4, Bl ea 2 |e |e ee le t =| 25] -| 25 | -| 25 |nsee *£200j.see Pulse 2% Duty Cycle yenive Theatre fare : 3 “Copa E t a a “Sioa aE 0 TY voem™ se t a Tn p Le Feet 28 ee“BIG IDEAS IN PowéeértTech 100 AMPERES PT - 500 PT-501 PT -S502 SILICON NPN TRANSISTOR FEATURES: Voetest) OG V@SOA hppeeeeeeees---. SmIN@1OVA Igypy-......... 12A@100V VP oes 12V@50A 25sec Egppecessees 6 Joules SAFE OPERATING AREA SEDEC TO-114 PKG. PowerTech’s transistors offer high current capability, high breakdown voltage and the lowest available saturation voltage. They have exceptional resistance to both forward and reverse second breakdown, This unique combination of device char- ‘acteristics makes them particularly suited for a wide variety of high current applications, which include series and switching regulators, motor controls, servoamplifiers and power control circuits. The transistors will provide outstanding performance when used as replacements for paralleled lower current devices, resulting in considerable reductions in weight, space and circuit complexity. Their reliability is assured through 100% power testing at 50V, 4 @ 100°C case temperature, These tran sistors exceed the requirements of MIL:$-19500 and are well suited for the most severe military-aerospace applications. MAXIMUM RATINGS SYMBOL PT-502 PTs01 PT-500 Collector-Base Voltage vee 120v 10v 178V Colleetor-Emitter Voltage Veco ae tov 120 160V Emittr-Base Voltage VEEo, tov Peak Collector Current ts 1008, D.C. Collector Current i 0A Power Dissipation @ 25°C °5 350W Power Dissipation @ 100°C P5 200W ‘Thermal Resistance 8c 0.8 cw Operating Temperature Range -65 t0 200°C Operating Temperature Range -65 t0 200°C