Scribd Logo
Upload

Welcome to Scribd!

  • EE4412 Mosfet p1

    Uploaded by

    Matt
    24 views22 pages
    First half of Semester: Part 1 of 4

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Report this Document
    First half of Semester: Part 1 of 4

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    24 views22 pages

    EE4412 Mosfet p1

    Uploaded by

    Matt
    First half of Semester: Part 1 of 4

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    of 22
    Technology and Modeling of Silicon Transistors Part ls MOS Devices - CH Ling FE4412__Technology and Modeling of Silicon Transistors Part 1 4 MC Module — 39 hours (20 h) - MOS Device: Module Contents (C H Ling) Topics : Introduction Milestones in VLSI Technology ~ TN Fig 1-1, 1.2, 1.3 ‘The MOS Capacitor; Energy Band Diagram — TN Fig 2.21, 2.22 ‘Charges in the MOS syste: ‘erminology — TN Fig 2.36 Silicon cartier statistics Density of states function Fermi-Dirac function, Maxwell-Boltzmann approximation Electron and Hole concentrations; Intrinsic and Fermi levels Intrinsic and extrinsic carrier concentrations. Field Effect NB #2 Definition of potentials (x) ; sign convention ; energy band diagram heigh Bulk and surface potentials 4, ¢, 3 surface bari Normalized potentials 1, u,, v,; bulk potentials in n- and p- Built-in potential across pn junction space charge region Electron and Hole concentrations n(x), p(x)i_n{u(x)), plu(x)] | | | i | Solution of Poisson Equation: silicon surface electric field F,(u, uy) Charge in silicon Q, ; Potential profile u(x) ; Depletion Approximation Depletion and inversion; Maximum depletion width W,.. I | Energy band diagrams under various gate bias, Criteria for inversion: _y, = ~2¢, and Lindner’s condition Surface barrier height and max depletion width y, =(9N, /2e,)W2, Relationship: W,,, and doping density N, or N,, TN Fig 3.24 ‘MOS Capacitor at Low Frequeney | Definition of static and dynamic (small signal) capacitances Potential distribution across gate, oxide, silicon MOS structure Small-signal equivalent circuit: C= Cz! + Cy! Silicon surface field Fand charge Q, in terms of u,,1,37,.7)3 Pes Pp Silicon capacitance for accumulation, flat band, depletion, inversion CV plot; quasi-static measurement; ideal and non-ideal characteristics Charge, field and potential distributions across MOS structure Charge centroid; Effects of charges in oxide and at interface Extraction of flat-band voltage, oxide thickness BEU412/Modble Contents $250 Technology and Modeling of Silicon Transistors Part: MOS Devices - CH Ling High frequency capacitance 15 Majority carrier response; dielectric relaxation time “Minority carrier response time, sources of carriers: bulk traps Silicon inversion capacitance; energy band diagram, CV plot Minority carrier response mechanisms ‘Thermal generation-recombination at bulk traps, diffusion and drift “| CV Plot; ideal and non-ideal characteristics Deep depletion: non-thermal equilibrium max depletion width Extraction of fixed charge, substrate doping Interface states and energy distribution; physical origin E and P, centres; ESR principle and technique Extraction of CV curve for thin and leaky gate dielectric MOS transistor; Geometry, and structure, TN Fig 3.1, 3.2 Curreni-voltage characteristics: 1, -V5, Ip —Vo Tsividis Fig 1.27 Threshold voltage for N+ Polysilicon NMOSFET: physical origin Long-channel MOSFET models: Gradual channel approximation ‘Square-law and Bulk-charge theories RFP P620 ‘Transistor operation from the perspective of energy band diagrams Drain induced barrier lowering DIBL in short-channel device Vous &nd pinch-off, Linear and saturation regions; TN Fig 3.4, 3.6 Channel conductance, transconductance; Mobility degradation Velocity saturation, velocity overshoot TNFig3.25 ih; Subthreshoid characteristics i Body effect; deep depletion ‘Subthreshold conduction mechanism; subthreshold slope Short-channel effects; 2-D potential contours in device threshold voltage roll-off, control techniques; TN Fig 3.17, 3.18. 3.19 Extraction of threshold voltage TN Fig 3.3, 3.9, 3.10 Extraction of parasitic capacitances, series resistances, channel length Sealing rules 10 Other topics Hot carrier degradation mechanisms & suppression techniques Substrate, dielectric and drain engineering; CMOS latch-up. Gated diode and gate induced drain leakage GIDL mechanism, SOI MOSFETs, strained-silicon MOSFETs Reference Texts: EH Nicollian and J R Brews (NB) MOS (Metal Oxide. Y Tar and TH Ning (TN) Fundamentals of Modem VLSI Devices, Cambridge University Press, UK, 1998 RF Pierret (RP) Semiconductor Device Fundamentals, Addison Wesley Longman, US, 1996 TBEA#12/Modhle Contents emiiconductor) Physics and Technology, John Wiley & Sons, New York, 1982 Technology and Modeling of Silicon Transistors Part!: MOS Devices - CH Ling Chapter 1: Introduction Reading Material: TN §1.1, 1.2, 2.3; RP §14.1, 16.2 1.1 Evolution of VLSI Technology — Moore’s Law Minimum lithographic feature size reduces by 0.7X every 3 years One-transistor First bipolar DRAM cell transistor invented 0987) (1968) First MOSFET (760) VLSI era + + t + + + + _ wi 1950 figeof 92d) 198 1990-2000 Mos invented (1963) ie Fisst micro- invented processor (1958) 97) Fig 1.1 Chronology of major milestones in the development of VLSI [DRAM] 5 a 202 2 200 Miz, 2 E ‘a ‘6 — 7 os & 2 Lithography & 5 03 § 1Ee4 02 . creer eee 1970 1980 1990 2000 Year Fig 1.2: Trends in lithographic feature size and number of transistors Technology and Modeling of Silicon Transistors Part]: MOS Devices - CH Ling MOSFET pMOSFET petype substrate Fig 1:3: Schematic device cross section for a CMOS technology 1.2 The MOS Capacitor The MOS capacitor is probably the most important single device that lays the foundation for the understanding of the MOS system. Gate electrode (metal or polysilicon) Silicon dioxide Silicon substrate Fig 1.4: Schematic cross section of an MOS capacitor Technology and Modeling of Silicon Transistors Parti: MOS D. CH Ling _ far on O° tego fron Sb Son weed & Seer + (yor 04S )e¥s Vacuum Vacuum Ve level zal ee level 0.95 eV Ee 44m = 4.10 6V 92= 4.05 eV BOeV Metal 7 (aluminum) x Silicon dioxide Fig 1.5: Energy band diagrams for the 3 components: metal (Al), SiOz, p-Si Common reference energy — the vacuum level, is defined as the energy level at which the electron is free, not bonded to the lattice. The energy difference between the vacuum level £, and the Fermi level £, is the workfunction gb = (£,=£,)of the material: The workfunction |g, isy an invariant fundamental property of the specified metal. Some values of g, : 3.66eV(Mg) °° fie weet ond 4.10 eV (Al) 5.15 eV (Ni) Ticmeel , P , q®, =q{+(E,-E,)p5 at flat band (FB) or zero field condition in Si, where the electron affinity 9 =(E,~E,)jygcr 48 an invariant fundamental property of the specified semiconductor. Technology and Modeling of Silicon Transistors Part: MOS Devices - CH Ling 4.0 eV (Ge) 4.05 eV (Si) 4.07 eV (GaAs) 0.95 eV (SiO2) Some values of gy : Note that the semiconductor component (£,-£,),, depends on the position of the Fermi level, which can be obtained from the doping level. ‘The invariant fundamental property of the electron affinity means that the ‘energy difference between the conduction band edges of Si and SiOz This energy difference is (4.05 — 0.95) = 3.1 eV. An electron in the Si conduction band must have this minimum energy to be injected into the SiOz, an important consideration in MOSFET hot-carrier reliability. 1.3. Charges in the MOS System Charges give rise to potentials and fields which directly impact electrical behaviour of MOS devices. There are 3 regions of interest: seclivm ton acantl / é (1)bulk oxide (2)Si-SiO, a (3)Si substrate saucapte: fons % PF, depletion lar eg Mobile Sani charge can O) ov5e wacepecred short between “ve “unchion (ured Cdeas termina lp) @ (ots can alse Move 4 Hae exihe camsicd, ectwcal be lane te vary with ting | @ Mtr Wwealkedowa beravier of pr janchiens by treating Bells nm diaall regions. = + + + + + Fixed oxide charge, ne Ke Xe KK Nie Interface trapped charge 2 Ox Ke Nee } Mobile ionic charge a Ce Sido Got pute eet *} Oxide trapped charge Fig 1.6: Types of Charges in the MOS structure + Onide biced chage vefeds te localised charge Cotes tual caunsk change tar chery! by ewchauge of daa bide careiees with te Silom. Technology and Modeling of Silicon Transistors + (aterfac ier charge refea clarge locaizet — Partl: MOS Devices - CH Ling : oa Ceudert that cm clang fe ae arb stake bg 2charge ed cvbila Carer es wet 1.4 Nomenclature Parameter | Symbol | Unit attetedh, { | Oxide fixed charge density Or Com ouidaton Oxide trapped charge density] raramijavin its |__ Que Com’ cendstioné, | Mobile ion charge density |" 0» [oR%#) Qn Cem" annsabing , t Interface trap charge density Qu amo coutawiants| Interface trap level density Du a =o SaaEEEEe O, = 4 [D, (Bae «ten fae, tape alent ‘mace wabilly. | stmt mabe dng ey eee fap je tater face NOTE: In the study of semiconductors, the unit of potential is the VOLT (V), and the unit of energy is the ELECTRON-VOLT (eV). 1 electronic charge x 1 volt = (1.6#10-" Coulomb) x (1 Volt) = 1.60°10°” Joules In the literature, quite often distinction is not made of the two units. For example, the workfunction is sometimes referred to as volt, though the correct unit is electron-volt 1.5 Physical Constants Technology and Modeling of Silicon Transistors Partl: MOS Devices - CH Ling a Description Symbol Value and unit Electronic charge Boltzmann's constant Vacuum permittivity Silicon permittivity Oxide permittivity Velocity of light in vacuum Planck’s constant Free-electron mass Thermal voltage (T = 300 K) Angstrom Nanometer Micrometer (micron) Millimeter Meter Electron-volt = chargexvoltage Power = current-voltage Time = resistance x capacitance Current = chargeltime Resistance = voltage/current capacitance x voltage 1=Q/t R=V/I q 1.6 x 10°C k 1.38 x 10°? YK & 8.85 x 10°" F/em 8s 1.04 x 107! F/em Boe 3.45 x 10°? F/em te 3 x 10" cm/s h 6.63 x 10-4 J-s mo 9.1 x 10 kg KTIq 0.0259 V A nm hm mm J mm = 0.1 em m im= 10? cm eV TeV=1.6x 10°?) B= qV¥) — Joule=CoulombxVolt Q@=CV — Coulomb = Farad xVolt P=IV Watt = Amperex Volt t=RC second = 2 (ohm)xFarad Ampere = Coulomb/second Q (chm) = Volt/Ampere Table 1.1 Physical constants Technology and Modeling of Silicon Transistors Part: MOS Devices - CH Ling 1.6 Physical Properties of Si and SiO; TABLE 2.1 Physical Properties of Si and SiO2 at Room Temperature (300 K) Property Si SiOz Atomic/molecular weight 28.09 60.08 Atoms or molecules/cm? 5.0 x 10? 2.3 x 10” Density (g/cm) 2.33 227 Crystal structure Diamond Amorphous Lattice constant (A) 5.43 2 a Energy gap (eV) 112 8-9 Dielectric constant an fs 39 Intrinsic carrier concentration (em™>) 14x 10! _ Carrier mobility (cm?/V-s) Electron: 1430 _ Hole: 470 a Effective density of states (crv Conduction band, N,:3.2 x 10" Valence band, N.: 1.8 x 109 — Breakdown field (V/em) 3x 10° >107 Melting point @C) 1415 1600-1700 Thermal conductivity (W/em-°C) 15 0.014 Specific heat (J/g-°C) 07 1.0 ‘Thermal diffusivity (cm?/s) 09 0.006 ‘Thermal expansion coefficient (°C~!) 2.5 x 10-6 0,5 x 10°¢ Table 1.2: Physical properties of Si and SiO. eae Coy ate) 4 & and \ nw) \/ ) Technology and Modeling of Silicon Transistors Partl: MOS Devices - CH Ling Chapter 2: Silicon Carrier Statistics Reading Material: TN §2, NB §2, RF §2 2A Density of States The silicon crystal has ~ 5 x 10% atoms cm”, giving rise to ~ 5 x 10” energy levels in both the conduction and the valence bands, each band accommodating ~ 2 x (5 x10”) electrons. If T(E) is the total number of quantum states up to energy E, then density of quantum states is defined as Eatlovedl emery tats’) dv M(E)= TE (2.1) ‘Assuming parabolic bands near the band edges, the density of states in the conduction and the valence bands are given by Cac : - ae, =F fom lee, y ~reieior( : ) ene". 99) s M,(E)= (Fm, )i(E, - BE) ~ 2.846 or a ) ame" oy ay where subscripts c, v refer to the conduction or valence band, m;,, are the electron or hole effective mass, and E,, are the respective band edges, i.e. energy level at the bottom of the conduction band or at the top of the valence band. 2.2 Fermi-Dirac statistics The probably that a quantum state at an energy level E is occupied by an electron is given by 1 i : exp ——* iT : (24) where E, is the Fermi energy, and &7 is thermal energy ~ 25 meV at room temperature T = 300 K. The probably that a state at the energy level F is empty of an electron or occupied by a hole is given by [I~ f(E)]- detos f(E)= g! [EEG 2/Chapter2: Silicon carer statisties Technology and Modeling of Silicon Transistors e Partl: MOS Devices - CH Ling For (E~E,)/kT >3, f(E)<0.05. Hence we may consider all states above the Fermi energy to be empty and all states before the Fermi energy to be full. Boltzmann function /(£)> exp[-(E = £,)/ kT), which is the form that will be used frequently. wnen Eo far frm Be, Cie e-eg oo Few lets ~3 2.3 Electron and Hole Concentrations aap) The electron concentration in the conduction band and the hole concentration in the valence band are given by acenmote Ee My n= Ju enrende ~N, on 5 (2.5) and e : E,-E,] 5 3et Pe Ju. FEE ~ W, ox ry jeg (2.6) invoking Boltzmann approximation, and where N.= vf emt } NAT =300K)=3.2¢10" om™ , (2.7) ‘And “ery fe) N,(7=300K)=1.8+10" cm”. (2.8) N, may be interpreted to mean the “effective” total number of electron states/em® in the conduction band, with all states located at E, (which, of course, they are NOT!); N, may be interpreted to mean the “effective” total number of hole states/cm’ in the valence band, with all states located at E,. 2.4The Intrinsic Fermi Level When n= p~=n,, the intrinsic carrier concentration, the Fermi level equals the intrinsic level, given by EEA412/Chapter2: Silicon carer statistics 2. vsefal for duladl ating cont wavotty juste we ‘Silior ak lows os Te Technology and Modeling of Silicon Transistors Partl: MOS Devices - CH Ling 1 1 N E, =E, -He.+e)ehn®), (2.9) and for N,/N, ~1 e “HEHE, (2.10) 2. where E, is the band gap energy and equals ~ 1.12 eV for Si. 2.5 The pn Product at Thermal Equilibrium Eq (2.5) and (2.6) lead to ey wee EEs412/Chapter2: Silicon carer statistics 4 Technology and Modeling of Silicon Transistors Partl: MOS Devices - CH Ling Chapter 3: MOS Surface Physics Reading Material: NB §2.3, TN §2.3, RF §16 Note: There exist some discrepancies, between different texts, in the magnitude (such as bandgaps) and definition (such as the electrostatic potential) of some parameters. In this module, we will adopt the NB definition for potential, which I find to be most consistent. 3.1 MOS Structure and Band Diagram af 4g pwed yt B & 5 = sate S 2 f+— Oxide 5 J¢— SILICON abate loo ‘OHMIC CONTACT PBN Fig3.1: Al-Si0, ~ pSi MOS structure and band diagram A An energy of 3.2 eV is needed to bring an energy of 4.3 eV is needed to bring an electron from the silicon valence band to the lowest unoccupied state in the oxide conduction band. At thermal equilibrium, equalization of Fermi levels in the metal £,, and ‘inthe silicon £,,, leads to the formation of a dipole layer: (a) a layer of positive charge in the metal at the metal/oxide interface, of thickness ~ 1 A (0.1 nm), and (b)a layer of negative charge) in the silicon near the oxide/silicon interface, of equal magnitude but of opposite polarity. TEEAII2Chopter3: MOS Surface Physics 1 Chap and bandelres cam 4.) mos Stractu re L pp hr convention te pefubont of potentals 33 Electom b hole dens hes 3-4 Pbsom Egua tion $3 chepe of poles! Larner 2 Deplikion uppron duction 37 Max. depletion vod th 3.9 Max - doplthon Lath & opavt clea $1 3:4 Depletron with wnclen non thortats/ eptulibe iti Conchiion Chap GI TE and teoedg state #2 sete £ ad ctpertahral cop auiban C2 © YB Small signal equieleat Creu of MOS capac or $4 Geen surface clrge under Afferent gate beg conbhan (3) deplehom Gi) accumulation Git) pavorsion vs Clulaton of LE eapauitance YG tdeal Mos equations : 49 Copautina at Platband = % a8 Cpachnce ah Stang aceuunglap or — meee (4) Bol’) 4-1 Capautaae ot Deplebrw oS, flo Copreten® af Sromy prversion woe (I ‘eo wu LE o-y plot GD Technigys( yon Cid) B Ouest dechagud. fr Chge | held and potentral distabadions of gate ewe OB LE cag autany curves Technology and Modeling of Silicon Transistors Partl: MOS Devices » CH Ling 3.2 Definition of Potentials and Sign Convention Deir: ) fll 2] al Leiomze ocnors ["Renecraons TP 2.9 (a) Energy diagram of the MOS system for n-type silicon in accumulation. The yhown slong with their sign conventions os ‘The charge distribution diagram below the lation is made up entirely of vcapaonnason is sown, Charan deotn diagram below th gram shows that surface charge in depletion-inversion Is made up of holes and fonized donors. © ww horse bait Y=W7— dy fre fe AS bale mney ce) peeabia| surfoce 00) potential i rae, ueRne A -LECTRONS. 2.10 (a) Energy diagram of the MGS system for Palype-slleoniin accumvlation, The Gartovs potentials defined in the text ere shown along with thelr sign conventions as Indicated by the arrows. fagram shows that surface charge in accumulation Is ma ) Same 28 (a), 6xcopt depletion-Inversion Is shown. Charge distribution diag‘am below the energy diagram shows that surface charge in depletion-inveraion is mado up of electrons, ‘and ionized acceptors. ate = Eg - EI) Fig3.2:__ Energy band diagram of silicon surface EEAM|/Chopter3; MOS Surface Physics Technology and Modeling of Silicon Transistors Partl: MOS Devices - CH Ling : 1 oe) =e, - E(x). By The ‘intrinsic energy level in the-bulk £,(x— ») is taken as the reference, Atthe surface x=0, 9(0)=9, defines the surface potential. Inthe bulk x3, — ¢(co)=4, defines the bulk potential. Note: $,>0 for n-type Si, ly t and lt f <0 for paypeSi. om 44 (2) Band Bending is defined as 1 t VIX) = 9) = ~ glee x) ee 62) Le. the electrostatic potential at a point x in the space charge region with | Subscripts ¢, v, i refer to the conduction band edge, valence band edge and intrinsic level. (3) Barrier Height is the total potential difference between the silicon: YW, =W(x=0)=9,-%, - (3.3) (4) Dimensionless Potentials u(x) = ga) /AT v(x) = Gy (X)/KT , and = v(x) =u(x)-u, - (3.4) It is common for electrostatic: potentials to» be: “normalized” to thermal; voltage kT /q , and electron energies to thermal energy kT” EEH412/Chaprer 3: MOS Surface Physics Technology and Modeling of Silicon Transistors Partl: MOS Devices - CH Ling 3.3 Electron and Hole Densities n(a)=N, ox{- 20%) ; kT and : wie ee n(x=N, onl - E.G@)-E) ) i AT giving osm 1808 ube = no)= nox FiO Ep, explu(s)] ier w e. donor density : and wng=njexplu@)=V@) yy. | (3.5) Hence et os git and Also At the surface, x=0 and u(0)=u,, (0) Surface densities are n, =n, exp(u,)= Ny exp(s) » and exp(-u,) = N, expl-¥,) » 3.7) 3.4 Poisson Equation 8) where e, is the permittivity of silicon €,(Si) = €,€, = 11.8 #8.854 010° F,~ 1.04010" F/em~1 pF/em £,(SiO,) =3.9*8.854 © 10" ~ 0.345. pF Jem ~ &,(Si)/3. EEA12/Chapter 5: MOS Surface Physics 4 Technology and Modeling of Silicon Transistors Partl: MOS Devices - CH Ling and charge density chore beadeatitity shenteh eatel cee oe baile pix) = alps) ma) #NG Nu] poer-n60) +N Aa <0 BD) Nd ~Na + alco )—p (oo), Now > = a Cexplur) —e ple) ] n(x) ~ p(x) = 2m, sinhlu(x)] , = ndGigh(s) nae .10) N, -N, =2n,sinhlu,] , me Hoe compl’ takedt Lonnin(@t) act fo Hea Uteidepenclence of Cantor hensitf om au _ 1 Feniyay—sinituyy) , Potente hed “Ae aruell -baligmane dtu =gt) eB lsinh(u)—sinh(u,)] » Pe (atten. Ga) ae where intrinsic Debye length is defined as AT 2 zz Bae (Gn) For T =300K, 10° cm, 1 pFlom, A,~28 pm. Th is felt. A criterion to be used could be the distance at which the tensity of the charge imbalance (measured by, for example, the potential) drops by Ie. (The Coulombic force between two charges decays inversely as the square of distance and is zero at infinite distance. What is the effective distance at which the force is practically zero???) From Eqn (3.11), with boundary conditions at the surface x=0 and in the bulk x= " (du) _2"r 7 HG) og Jsinney since / (3.12) i Ve (4 d a x 5%) where aes & dx kT *? A (3.13) EE4412/Chapter3: MOS Surface Physies nan 5 5 aegis” aby Technology and Modeling of Silicon Tansisior Partl: MOS Devices - CH Ling aii and F,=F(x=0) is the electric field at the surface. (Note that the negative sign is left out in Eqn (3.13), to be consistent with Nicollian & Brews’ definition of the electric field.) Integrating Eqn (3.12) leads to = Fle, —u,)sinh(u,) — {eosh(u,)—cosh(u,)}] 14) or A I a (uy, —u,)sinh(u,) — {eosh(u,) —cosh(u, )}}? (3.15) Also the electric field at a point x in the space charge region is given by * tug from i ae onitier kT ! gue ‘out FO= A(T fo —u(x)}sinh(u,) — feosh(u,) - cosh(u(a))} FE 3.16) A dimensionless electric field at the surface is defined thus F, Jays) S FCus.4e) F(u,.t,) = V2[(u, —, )sinh(u, )— feosh(u,)— cosh(u, HH GID Note: Bee (1) kT / ga, = 254107 /28 Vi zm ~ 9 Vicm (2) The & sign in Eqn (3.15 - 3.16): Electric field is, by convention, positive if it points from a point at a more positive potential to a point at a less positive potential. (3) Total charge in the silicon of an MOS structure is given by (3.18) €,/4, ~1/28 pF lem* um ~ 350 pF lem? (2:1) Fo (3-20) solueel by Faleiag free carter centeatra tion ¢ ple Ace cul EEAIYChapter3: MOSSuibee Phsiclivey clescrike charge cleusily , Peo, auek 7 pelouiod uitwbicbinul vie $y aurea “all vilaas of Uy mse dio D9 p05 Technology and Modeling of Silicon Transistors Partl; MOS Devices - CH Ling 3.5 Shape of the Potential Barrier Now Foy=eh de F(x9: V/em q a see or nua. ; F(a,,): dimensionless a, q dx Hence eas Feun) or (3.19) Eqn (3.19) normally can not be solved analytically. In the trivial case when the silicon is intrinsic and_w, =0, Eqn (3.19) has a solution 2 tanine, a 4,7 tanhu74) (3.20) 3.6 The Depletion Approximation ‘The transition region from the space charge region to neutral region af 2n, } 1 Nua), ap extends over a few extrinsic Debye length 4, DEPLETION APPROXIMATION DEPLETION LAYER EDGE TOTAL CHARGE prn=o IG FREE a INCLUDING FRI CARRIERS s : x ‘ace Chawneg: venir 244 Silicon surtace charge density in the depletion approximation. Depletion layer wiath Is w. Total charge density Including free carriers Is shown as a dotted curve. The dotted line drops below the solid tine for x

    You might also like