NEC NPN SILICON TRANSISTOR 2SC945 DESCRIPTION The 25C945 is designed for use in driver stage of AF amplifier and low speed switching PACKAGE DIMENSIONS in miimeters inches) 2 wax FEATURES ® High Voltage Lvce0 : 50 V MIN. iat ase) © Excellent hee Linearity heer (0.1 mAl/hpe (1.0 mA) 0.92 TvP. Le 33 ABSOLUTE MAXIMUM RATINGS 8 Maximum Temperatures bets lee Storage Temperature 85 to +125 °C ar q |Re Junetion Temperature +125 °C Maximum 2s ease Maximum Power Dissipation (Ta joa eg Total Power Dissipation asomw | 8th jeshee. Maximum Voltages and Currents (T | aoe} 52 imum Voltage rents ey 53 | Vepo Collector to Base Voltage 60 v Pe Vceo Collector to Emitter Voltage so v hewirten clay: 30438 Vego Emitter to Base Voltage 50 v ZcouLecTon se0ec TOs? le Collector Current 100 ma lg Base Current . 20 ma ELECTRICAL CHARACTERISTICS (Ta=25 °C) SyMaoL CHARACTERISTIC win, WR MAX, UNIT TEST CONDITIONS Wee: BE Current Gain 0185 Vee-60V, 1g-0.1 mA nee OC Current Gain 90 200600 VeEsBOV, lent Oma ne Noise Figure 08 15 dB Vog 60, Ic=0.1 mA, RG=20 KA, fo1.0 KH " ‘in Bandnidth Product 160250450. MHz VgE~6.0V, Ig--10 mA | Cop Caller to Base Capacitance 30 40 pF Veg-60V, Ig=0,t=10 MH lego Collector Cutt Curent 100 nA. Vog60¥. le=0 leo Emitter Cutoff Currant 100 nA Veg"S0V.I¢r0 Vee Base to Emitter Voltage oss 062 085 V_ Vce~B.0V,Ic=1.0mA Veet) Collctor Saturation Votope O18 03 V te=tODmA,Iget0.ma Vata) Bate Sturtion Voltage 086 10 Igst00mA Igs10mA Clasitication of hee2 ree [a] = K Range | 90-180 | 198-270 | 200 ~ 400 | 300 ~600, ‘npea Test Conditions : VE ~60 V, I¢= 1.0 mA 258NEC TYPICAL CHARACTERISTICS (Ta=25 °C unless otherwise noted) TOTAL POWER ousiPaTion «NORMALIZED coLLecTOR cuTOrE TOMMMSIANFSSREE ATION ——-RORMALIFED Son LESTOR Suro ne 2 Era nee) oe ae : 3 a 5 3 tel ir i & val 23 3 eo “od 1° : 2 a ale 7 7 Sh a eo a oe ia Te Teo Se a Ta—Anbint Tenoerae—" iB LLECTOR CURRENT be cURMENT Gain SOTTO Se tS Mten voutace SS SAREE Cement = sa i § x) zE 2 Te E 1 Je=05 be | ° | “in veer cone Vana tance ee ie Vee coe Eater Wage-¥ er a couyecton cunnent goruscron AND BASE SATURATION SOREETROSUATENVorrace —-SBLHRELNUSESSRAIURAEAT rea ia 5d “Foe | ke peace to Enter Vatage—V ‘ecoletee Curent—mt 2S8C945 COLLECTOR CURRENT. Wr SOLLECTOR To EMITTER VOLTAGE hee=00 Curent Gln Ie-Cateer Current 7=Gain Bandwith Prodact—Hbe T Bs ot oe Calctort Enter Vatoge— bc CURRENT Sain FONE OR Wnnent | ig Colatr Corrnt—ra GAIN BANDWIOTH PRODUCT SAUTER SOR AEaT ES a Grads top oy aie=a Bi teEniter Corent=nk 2592SC945 EMITTER TO BASE AND COLLECTOR TO BASE CAPACITANCE we. REVERSE VOLTAGE ve 5 es ae ip-Emiter to Bae Capsctance—pF Sop Cabetoe fo ase Copactance Ve—Emitar 1 ase Vataee-V ‘os —Colectar Yo Sa Votbge —V soanotuesea conaers e eT Me—Normaizedh=Paramatars AN, o=Colector Cerent—ma Teese wel ign Catector Curent—ine 260 SMALL SIGNAL CURRENT GAIN wn'Se CURRENT CAIN I Teens eee Bos 8 g Smal Signal Current Gan EOC Curent Gain NORMALIZED PARAMETERS ete Fon Te eurrTER VOLTAGE fd ey i Voe~catctor te Emer Votage—W tw eaaav is = iol fost a oh sgnColacter Crvenka NEC RATIO AND OUTPUT ADMITTANCE Se 'SMALL SIGNAL CURRENT GAIN eet Admitance— 1 y-Nie Votage— W/E S 3 i i Tei padinee =a Treat ‘e=Smal Signal Curent Gao Te—Coetor Curent NoIse FIGURE MAP 3 Grog as ar P os 17 ce Balector Cerent—mk