CMos Technology Cw-e] Complementary Metal Oxide (cmos) is the main technology behind the boom of in tegrated ereuit jndustry. Sem iconduelor The mos freld transistor was proposed. by Lilienfeld jn 1925. low power dvan 5 cmos advantages § high level of inTegration VES! (very large scale integra iow ) achievable through the use of cmos Technology makes possible fo put a lot of funchous on a single piece of srlrcon C possibly an entire sysTem ). This ‘ncreases the rebabslity of toe SysTéin on The Chip , and lowers Hae cost. cmos technology uses two + Mos transistors : a cane p-type transistor ( pMosS) and n-type transistor CnMos ),Source. n-MOS transistor DRAIN GATE Source drain source. n-subsirale p- Mos transistor The fabrication of a Mos structure requires several chemicad processing sles. After those steps a typical mos structure is composed by the overla pPping. of the following ayers : diffusion [see pictues taken from: v.P. Uyemura Physical Design of CHos poly silicon Integrated Circuits using LET metal PWS Publi’shing Company Le) , insulatorSilicon dioxide: (a) Initial layering Substrate Photoresist () Photoresist coating Substrate Ultraviolet (©) Exposure Light Unexposed Pattern Mask (@) After development (©) Etching Ion implant ZEEE —=ny (@) After doping A mmm Doped region Figure 2.1. The basic lithographic sequence(a) Initial layering Substrate Photoresist (b) Photoresist coating Substrate Light (©) Exposure Mask gif CLALLALLDIALLAALAAILIDU Substrate Photoresist (@) After development Poly 3 Substrate (©) After poly etching ( Final pattern Substrate Figure 2.2, Poly patteming sequence