I agree with the above.

The band gap of a

semiconductor is the energy difference between the
valence band and the conduction band edges of
inorganic materials (or between the HOMO and
LUMO of an organic semiconductor). You can
estimate the (optical) bandgap of a semiconductor
by using optical absorption measurements (from the
absorption edge or, more accurately, from the tauc
plot). The Fermi level is an energetic level usually
located within the band gap of the material which
represents the maximum energy occupied with
electrons at absolute zero temperature. The position
of the Fermi level is a criterion for the type of the
semiconductor e.g., when it is near the conduction
band edge you have a n-type semiconductor. You can
estimate the position of the  Fermi level by
measuring the work function which is the energy
difference between the fermi and the vacuum level.
To measure the work function you need to perform
ultra violet photoemission spectroscopy
measurements.

11 Recommendations

Samares Kar 3 years ago

59.67 Indian Institute of Techn…

Band-gap is the forbidden energy range, in which no

states are allowed, i.e. the density of states in the
band-gap is zero There are many such forbidden