TOSHIBA 2SK2987 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (U-MOS II) 2SK2987 HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE Unit in mm APPLICATIONS, © Low Drain-Source ON Resistance: Rpg (on)=4.5m0 Typ.) © High Forward Transfer Admittance : |Y¢|=80S (Typ.) © Low Leakage Current : Ipgg=100/A (Max.) (Vpg=60V) 3 © Enhancement-Mode —: Vin=1.3~2.5V (Vpg=10V, Ip=1mA) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC sympoi | ratinc | unt |] 4). Dram Source Volage Toss ov) § “alt Drain-Gate Voltage (RGg=20k) Vor. 60 Vv ns Gate-Souree Voltage ‘Vass £20 V_ |] +. care i DC 1D 70 2. DRAIN (HEAT SINK) Drain Current ae Ibe in A || 2 source ‘Drain Power Dissipation (Te=25°C) | Pp 150 W JEDEC = Single Pulse Avalanche Energy” | Eg 490 | md_| | eIAs 80-65 ‘Avalanche Current, TAR 70 ‘A_|[vosnipa 2.16018 Repetitive Avalanche Energy™ EAR 15 | mJ_| Weignt 6p Channel Temperature Tech 150 c Storage Temperature Range Tag | —6~150 | °C ‘THERMAL CHARACTERISTICS CHARACTERISTIC [Thermal Resistance, Channel to Case | Rth(ch-c) | 0.883| “C7 W [Thermal Resistance, Channel to Ambient | Rth(ch-a) | _50 [°C/W Note ; * Repetitive rating ; Pulse Width Lis junction temperature. * Vpp=25V, Starting Te, =25°C, L=136,H, IAR=70A, RG=250 ited by Max. ‘This transistor is an electrostatic sensitive device. Please handle with caution. 261001648 @ TOSHIBA is continually working to Improve the quality and the reliability of fs products. Nevertheless, semiconductor devices in general can malfunction or Tail due to thelr inherent electrical sensitivity and vulnerability to physical stress, it's the responsibilty of the buyer, when utlzing TOSMIBA products, to observe standards of safety, and to avoid Situations In which @ malfunction or failure of @ TOSHIBA. product could. cause loss of human life, bodily injury oF damage tO property. In developing your designs, please ensure thet TOSHIBA products are’ used within spectfieg foperating ranges. os set forth in the most recent’ products specifications. Also, please keep in mind ‘the precautions hd conditions set forth in the TOSHiaA Semiconductor Relablity Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA. CORPORATION for ary infringements of intelectual property or ‘other rights of the third Darties Which may result from its use. No license Is granted by Implication of otherwise under any intelectual roperty or other fights of TOSHIBA CORPORATION or others @ The information contained herein is subject to change without notice 7999-05-26 1/5TOSHIBA 2SK2987 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION Mun. | Typ. |MAx. UNIT Gate Leakage Current Te Vas= = 16V, Vs = | — [210] pA Drain Cut-off Current Ipss = f= [100 [na Drain-Source Breakdown (BR) Ds wl=l=Ty Voltage (BR) DSX, 40} — | — Gate Threshold Voltage Vth | Vpg=10V, Ip=ImA 13 25 | Vv i Vas=10V, Ip=35A — 45] 58 rain-Sour istance | R mo Drain-Source ON Resistance | RDS (ON) [yoe=aV, Ip=35A si] 2 Forward Transfer Nanittanee Ws | Vpg=10V, Ip=35A 4o| so] — | 8 Taput Capacitance Cis = | 9300) — Reverse Transfer - =0V, f=1MHz Capacitance rss | Vpg=10V, Vag=oV, f=1MHz | — | 910! — | pF Output Capacitance Cos = [135 — 1p=35A [Rise Time te 10V iD Your} — | 18) — VGS oy fl [Turn-on Time R= — |} so] — Switching fon S 0.860 ns Time : 3 [Fall Time te — | uo] — Vpp=30v VIN : te t<5ns [Purm-off Time | tot | Duty =1%, tw=10/8 ~ | = Total Gate Charge (Gate- a, m0 Source Plus Gate-Drain) ie Vpp=48V, Veg=10V, = =o Gate-Source Charge Qes Ip=70A = | 15; — |™ Gate-Drain (“Miller”) Charge | Qea = 6, — SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION wan. | Typ. |Max.| UNIT Continous Dra Reverse TR _ _—|—| wla Pulse Drain Reverse Current | _IDRP = == x Diode Forward Voltage Vpsr_[IpR=70A, Vas=0V = [= Vv Reverse Recovery Time tr |IDR=70A, Vag=0V =] | — [as Reverse Recovery Charge Qrr _[dlpg/at=50A/ 8 =| 50[ — | 2c MARKING TosHiBA K2987++— TYPE UY fall 2 Lot Number Month (Starting from Alphabet A) Year (Last Number of the Christian Era) 7999-05-26 2/5TOSHIBA : 8 32 F i has-av DRANSOURCE VUTAGE. Yop &”) Dv se = Vos 100| I F " 20] 100% carmsounce WOLTAGE. Yop &) led = Ip, cous E | bo g i E eo ca) DRAIN CURRENT Ip «> 100 2SK2987 Ip - Vos ‘COMMON Tense s DRAIN CURRENT Ip ? a DRAINSOURCE VOLTAGE Vng «W) Vps ~ Vos counon souRCE Teaase g i 5 A a GATE-SOURCE VOLTAGE Ves Rps(on) ~ 1p | DRAIN SOURCE ON RESISTANCE TRps(ox) nid) T te we 00 DRAIN CURRENT Ip (A) 7999-05-26 3/5