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Tutorial - Semiconductor Bandgap Ate msic Chperee concenteatyon ev ten?) Si vie V5 xid° Ge 0°66 Q-3x3 Gals ao. 12 wpe a NY Bi mn = Ny exp (- = A NeNy e(. so Mf He > vn; of Si > ay, of Gals Vader dnemmah GMA DPIUM — retOMenakton, ‘ute (Rin) © pepetunal to clectron contentratun m cenductron leven end. hole. concentration 46 On valence band 2 & Ran = pp ers Proportional conrant - A Anermal equaliloemm generuton wate (Gi) 1s equa to recom brnahun rae (Rn) > Gin Rin = OMn0 Poo ‘ under « MOV) Type sernicun ductor Mo > electron concentyatton Pe fete cee Yo > hole » . umncler optrtah excitatun R= Prmntn = PlInetnd) (Pro +m ) my > excess electron concentrator hw > > hoe ” New generation rate. A= GwtGv emt ~me. net vale of change ™ cron carever concentration = =G-R= Pmt GR ak Seady stake, ero Loe Q@v= R-Gin =U U = Caress YE COMINAITON “Pele 20 = Planets [fot )— F Mono = plot K+ hao) bo Fue Low myectim Cane mm ay De tre Sernicanductor pace tno “px no and paps Mn0 , Pn- ne $Y = PMyo PH = PR nol Pr Pro) = — Tp = Aifelome of me reno core pyens ae 81a) py USES tore Es = Gu- (R-Gm) = GL- dence ef aby Swat en) = 7 Pr- Pno- Spa = C exe (te) Ok tel een in = 10 C= - OGL ext (7a) Fo Poo = Tha. = = Tou exp (- si) NW n= boo TAL [a- exp (. tak tes =~) (we) w t>terr see Fee ein

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