Professional Documents
Culture Documents
Outline:
• Motivation for advanced W machining technology
• Electrochemistry of tungsten
• Review of ECM processing methods
• Surface finishing by S‐ECM process
• C‐ECM process development for W structuring
• Conclusions
1 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009
Motivation for Electro-Chemical Methods
in He-cooled W divertor
Requirements:
• Adopted surface machining
• Microstruturing
• No processing introduced defects
• Processes with cost control
Castellation
e.g. slotted
Typical W-parts flow promoter
700°C 700°C
He-cooled modular divertor design Risk: Actual processing technology easily introduces defects
2 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009
Motivation for Electro-Chemical Methods
Typical defects and failures in W parts by conventional machining
3 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009
Electrochemistry of tungsten towards ECM
Advantages of electrochemistry and tungsten specific requirements
pliquid = psolid
Tliquid = Tsolid bulk H H
H
liquid phase H
-
-
p = Atm O
T = RT...100癈 H H
Me+ Δp = 0
Me+ ΔT = 0
Me+
O O
e- O
Me0 W W
O
O
solid metal phase Δp = 0 W WO3 WO3 W WO3 WO3 WO3
ΔT = 0
e-
tungsten metal
W W
O
O
pH = 8
W WO3 WO3 W WO3 WO3 WO3
pH = 7
1 pH = 6 tungsten metal
pH = 3
0,1 pH = 1 WO42-
WO42-
H WO42-
-
+ -
0,01 W + 3 H2O → WO3 + 6 H + 6 e H H
WO42-
0,0001
-0,5 -0,25 0 0,25 0,5 0,75 1 1,25 1,5 1,75 2 2,25 2,5
Potential E [V vs. NHE]
e- H H H+
SEM
O H+
H H H H O
e- H H H H
H+ H+
H+ H+ H+
O O
O
W0 -> W6+ W W
O
O
tungsten metal
5 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009
Electrochemical behavior of tungsten
Basic investigations
Electrochemical reactions
1000
pH = 12,4
pH = 12
100
pH = 11
pH = 10
pH = 9
10 pH = 9
pH = 8
pH = 7
-2
i / mAcm
pH = 7
1
pH = 6
pH = 5
pH = 3
0,1 pH = 1
i = f(pH)
0,01
System: W / TCEE / Pt
v = 1 mV/s, 1000 U/min, d = 16 mm
0,001
0,0001
-0,75 -0,5 -0,25 0 0,25 0,5 0,75 1 1,25 1,5 1,75 2 2,25 2,5 2,75 3 3,25
Applications
6 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009
Electro-Chemical-Machining (ECM) of tungsten
ECM processes and concept definition
Application: Aim: - + e-
Current
Surface finishing in micrometer scale Defect free surfaces
Cathodic Anodic Connexion
Connexion
Tungsten-Substrate
- e- +
Inert Cathode
Application:
Bulk structuring (Processes M-ECM and C-ECM)
agitation by microstep-motor
C-ECM Aim:
framework
Gaps with high aspect ratios -
cathode guiding
+
cathode =
ECM working tool,
negative image
vertically mobile
anode = workpiece
electrolyte
Form cathode Anodization under cath. Regioselective dissolution without mask
Workpiece = Anode propulsion
7 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009
Electrochemical tungsten processing S-ECM
S-ECM in high aspect ratio
S-ECM finishing
of castellation slots
Tile with
castellation
W surface, EDM
Standard conditions
5 min Sono (degasing)
S-ECM: 200 mA/cm2, min. 30 min (150 µm)
8 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009
Anodic W dissolution – bulk shaping
Variants of local metal dissolution by ECM
ECM Requirements ECM Advantages
• Electrolyte development • No cracks by ECM process
• M‐ECM: anode mask process • Surface polishing
• C‐ECM: cathode tool • residue‐free metal removal
ECM process variants M‐ECM and C‐ECM:
M‐ECM hν 365 nm
-
+
M‐ECM , W disk coated by
Slotted W disk
UV‐mask Novolak Depth 800 µm
Mask processing UV-lithography Electrochemical Etching Structured workpiece Restriction by mask stability
C‐ECM
tool
agitation by microstep-motor
Cathode = ECM working tool
workpiece
- - - framework
cathode guiding
+ -
2 H + 2e → H2
-
Anode = workpiece
+ + +
+
Processed workpiece
Me → Me2+ + 2e-
cathode =
Main differing features ECM working tool,
M‐ECM: C‐ECM negative image
Technique conventional installation complex facility vertically mobile
C-ECM scheme
Parameters current × time = charge charge + distance + step rate + convection anode = workpiece
Cathode passive counter electrode active shaping component (by step motor) electrolyte
Tool design 2‐dim. mask (positive) 3‐dim. electrode (negative)
Transformation +2‐dim g +3‐dim ‐3‐dim g +3‐dim
9 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009
C-ECM of tungsten
Me+
Me+ Me+ Me+
Me+ Me+
liquid phase Δp = 0
-
e- e ΔT = 0
Æ
Me0
10 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009
C-ECM of tungsten
Parameter: Gap width
300
200 E = d(AE-GE)
100 System: W / SL1 / Pt
2
i = 200 mA/cm , 1500 U/min, d 0 = 3 mm
0
-100
E / mV (Hg/HgSO 4 )
-200
-300
-400
-500
-600
-700
200 mA/cm2
-800 Determination of optimal gap distance in 100 mA/cm2
-1000
-1100
3000 2750 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 -250
Abstand AE-GE / μm
11 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009
C-ECM of tungsten
Parameter: Electrolyte flow
Convection
Hydraulic diameter
2 mm
Forced electrolyte flow
Electrolyte flow
12 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009
C-ECM of tungsten
Parameter: Pulse current effects
ν = 0 Hz
pH = 10 C-ECM:
Edge steepness as
Function of
Desired pulse frequency ν
flank
profile
i
ti tp
13 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009
C-ECM of tungsten
Parameter: Pulse current effects
i
ti tp
Influence of electric current WO3 + 2 OH- → WO42- + H2O
Pulse scheme t
Pulsed DC current
with ti = tp W + 3 H2O → WO3 + 6 H+ + 6 e-
0 Hz . . .
agitation by microstep-motor
framewor
k cathode guiding
-
+
cathode =
ECM working tool,
negative image
vertically mobile
anode = workpiece ... 1000 Hz
electrolyte
14 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009
C-ECM of tungsten
Demonstrators by C-ECM
Generated W-structures
Angled structure
15 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009
Conclusions
¾ Electro‐chemical behavior of tungsten analyzed.
¾ Suitable electrolytes developed for electro‐chemical machining (ECM) of
tungsten.
¾ Three ECM processes successfully developed for different main
applications in tungsten machining.
‐ S‐ECM for surface finishing.
‐ C‐ECM and M‐ECM for W shaping.
¾ Dependencies of C‐ECM on process parameters analyzed and optimized
for C-ECM processing.
¾ Demonstrators successfully fabricated by ECM.
¾ Cooperation with industries started for W processing by C‐ECM.
¾ Benefit from basic electrochemical work on W for deposition of W scales.
16 W. Krauss; ISFNT‐9, Dalian, China, October 11‐16, 2009