+H Typical Hycteresis Loops for oft. Hagnetic Hotesials And Hewd Mognetic Materials PSSST | Overs KS OSSOE ROD ba Bsc e Valence Conductor Energy Band DiogeamsCon tINvITY EQUATION Decreace within the Volume = tadn p © Incseace within the Volume = eadng ua. a) Decreace Within the volume = dX, - Gil) Inceease within the Velume = Cade dp ) nnn oes de a +eadeg— dy -- I, = aEpep, —- ae by de these E> applied electcic Field na Py > mobi) ? poet O, > diffusion constant, ey se (vii) Cembintng (Vv), Vi) ond Wi) we have Che E er. 0, PP eps dt * aHALL EFFECT Ch = Bev...) Ey= Va ov Y= End = Bud Cv Ey =Bw d = 0h d=ZL=iots A wd ev ve a Por ~~ From (ji) and iy we howe Yow Bit - OF Awd Pwo Ry = Electric Field due te Hall effect Gorrent Density x Magnetic Field = Fy = W/d = 8I \ JxB IxB Pw dxdJxB =i = +; D=wdd PwdHar ANGLE e . ete tk es B= ten’ Ey ergias Now Ey= Ya and Ex = Voltage dvop along the length 1 —Targth of Specimen at ooh TEM) x sesistividy fot ee as =i@= 2 diy Substituting wigs Feom aly and ditiy in dy =ton’ Va/d = ty’ Ciewya “Vy = Bl d/r Ve Pw =tr' BIP re Jaz dr ia 7 Br Pe =tan' BrRy » Rua =to ~B spokeCuRRENT IN Diode Under ferwaxd bias, diode current I=1,@:+k.@ “OD where T, > cucsert caued by holes entering N segion. Tp> cxcrent caused by clectrans entering P region. 4, = a Dh Pro [emi] L, = dl ®& Ie = oe Le Mb “We, se Gil, e 1 ay o= Wwhese :- A> oxen of material in m> Dy diffusion constant for holes in nt/s De > di ffurion Comatant for electraw in ni/s € > mognitude Of charge ch heles/ electyons Lydif fusion legth of heles in m Les diffusion length of electsam in m Pro > cancentrsation of holes in N wegion of thesma! j \ibo wt user Bl pe > cncentstien of electsans in P wegion ot thesmal eqriliosivm V— voltage applied acwess PN diode Vr Volt equivalent of temperatiwe Using @, di) & dl) Ieintk | >= Ce“ 1)