RF MEMS Capacitors

Amro M.
Elshurafa
May 2013
RF MEMS Capacitors and Variable

Capacitors – The Future of Wireless
Communication
Before we begin…
You are free to use this presentation as you see fit. Any publications, in the form of slides,
conference papers, journal articles, technical reports, or otherwise, in which these slides
will be used (in their original or modified format) should cite one or more of the following
references:
[+] Amro M. Elshurafa et al., "Low voltage puzzle-like fractal MEMS variable capacitor suppressing pull-
in," IET/IEEE Micro & Nano Letters, Vol. 7, No. 9, pp. 965-969, 2012.
[+] Amro M. Elshurafa et al., "Differential RF MEMS Interwoven Capacitor Immune to Residual Stress
Warping," IET/IEEE Micro & Nano Letters, Vol. 7, No. 7, pp. 658-661, 2012.
[+] Amro M. Elshurafa et al., "Two-Layer RF MEMS Fractal Capacitors in PolyMUMPS for S-Band
Applications," IET/IEEE Micro & Nano Letters, Vol. 7, No. 5, pp. 419-421, 2012.
[+] Amro M. Elshurafa et al., "A Low Voltage RF MEMS Variable Capacitor with a Linear C-V
Response," IET/IEEE Electronics Letters, Vol. 48, No. 7, pp. 392-393, 2012.
[+] Amro M. Elshurafa et al., "RF MEMS Fractal Capacitors with High Self Resonant Frequencies," IEEE
JMEMS, Vol. 21, No. 1, pp. 10-12, 2012.
[+] Amro M. Elshurafa et al., "MEMS Variable Capacitance Devices Utilizing the Substrate: I. Novel Devices
with Customizable Tuning Range," Journal of Micromechanics and Microengineering, Vol. 20, No. 4, 045027
(8pp), 2010.
[+] Amro M. Elshurafa et al., "Effects of Non-uniform Nanoscale Deflections on Capacitance in RF MEMS
Parallel Plate Variable Capacitors," Journal of Micromechanics and Microengineering, Vol. 18, No. 4, 040512
(11pp), 2008.
[+] Amro M. Elshurafa et al., "Finite Element Modeling of Low Stress Suspension Structures and
Applications in RF MEMS Parallel Plate Variable Capacitors,“ IEEE Transactions of Microwave Theory and
Techniques, Vol. 54, No. 5, pp. 2211-2219, 2006. 2
Before we begin…
This presentation was prepared in May 2013. Publications, research, and results reported
afterwards will not be reflected herein.
About the author:
Amro Elshurafa obtained his PhD in 2008 in electrical engineering with a focus on RF
MEMS variable capacitors. Amro is a registered professional engineer (PEng) and is a
senior member of the IEEE. He can be contacted via email at elshurafa@ieee.org.
3
Agenda
What is MEMS and RF MEMS
RF MEMS Capacitors
RF MEMS Variable Capacitors
Simulation
Measurements
State of the Art

4
What is MEMS?
• MEMS abbreviates Micro Electro Mechanical Systems
• Integrating sensors and actuators possessing
dimensions ranging from 1mm to 1μm and relying on
electrical, mechanical, optical, chemical, etc, phenomena.
• You can hear NEMS, (similar to RF, it is no longer radio
frequencies; microelectronics also is nano now!).
• Hair diameter thickness is ~100μm.
• Strong emphasis on fabrication.
• If coupled with IC, the sky is the limit.
5
Most Famous Applications
• Printer Ink Jet Nozzles
• Inertial sensors
– Accelerometers (1D acceleration meter)
– Gyroscope (rotation rate meter)
– Applications in: air bags, Wii, game arcades, iPhones, Samsung
phones, satellites, missiles, etc.
• Biomedical medication dispensers (microfluidics).
• RF switch array in mobile phones (2012).
6
Most Famous Companies
• AD
• HP
• TI
• Siemens
• Bosch
• Xerox
• GE
• STMicroelectronics
• Qualcomm
• Cavendish
• WiSpry
• Omron
• Raytheon
• Intel (classified)
• This list is different than pure MEMS design, fab, and fabless companies.
7
Fabrication – Briefly
Deposit and pattern
Deposit and pattern structural layer
sacrificial layer
Some Substrate
1 2 3
Etch away sacrificial layer to

get free standing structures Repeat steps 2 and 3 again
8
5 4
Foundry –
Standard vs. Non-standard
• The PolyMUMPS process from

MEMSCAP, NC, USA.
• Has been in business since 1992.
• Very reliable and robust.
• Used by hundreds of groups

throughout the world in countless
applications.
• What about CMOS? Can we have

that?
9
Foundry –
Standard vs. Non-standard
10
Why RF MEMS?
Inductors
Capacitors IC’s
Resistors
It is the high-Q
passive
components that
are hindering
miniaturization!
Slide by
Dr. Clark Nguyen at
University of California
at Berkeley.
11
Why RF MEMS?
• Ceramic filters:
• Made of piezoelectric ceramics
• Frequency is adjusted by thickness and size of the
ceramic element
• Typical dimensions are: ~20mm × ~10mm × ~5mm
• Extremely dimensions sensitive: a ±0.1mm
dimension tolerance yields a frequency accuracy of
±220MHz → Expensive
• No further opportunities for further
miniaturization
12
MEMS Benefit: General
Less power consumption
Discrete
electronics
Better performance ICs
High volume fabrication
Less power consumption

Off-chip
passives
Better performance MEMS
and filters High volume fabrication
13
What Can MEMS Offer?
High Q filters:
fo = 8.5MHz
Qvac = 8,000
Qair ~ 50
Lr = 40μm
F. Bannon, J. Clark, and C. Nguyen, “High Frequency Microelectromechanical IF Filters," IEEE

International Electron Device Meetings, pp. 773-776, 1996.
14
High Q resonators:
-84
20μm
Q = 10,100 (air)
Transmission (dB)
-86
-88
Polysilicon -90
Electrode -92
-94
-96
-98
CVD Diamond -100
mMechanical Disk Ground 1507.4 1507.6 1507.8 1508 1508.2
Resonator Plane Frequency (MHz)
J. Wang, J. Butler, T. Feygelson, and C. Nguyen, “1.51GHz nanocrystaline Diamond Micromechanical Disk Resonator with Material
Mismatched Isolating Support,” IEEE Conference on Microelectromechanical Systems, pp. 641-644, 2004. 15
High Q inductors:
J. Zou, J. Nickel, D. Trainor, C. Liu, and J. Schutte-Aine,

“Development of Vertical Planar Coil Inductors Using
Plastic Deformation Magnetic Assembly,” IEEE
International Microwave Symposium, pp. 193-196, 2001.
Jun-Bo Yoon, Byeong-I1 Kim, Yun-Seok Choi, and Euisik Yoon, “3-D
Lithography and Metal Surface Micromachinig for RF and Microwave
16
MEMS,” IEEE Microelectromechanical Systems, pp. 673-676, 2002.
Varactors: CMOS vs. MEMS
CMOS Varactors
MEMS Varactors
(reverse biased diodes)
Leakage currents exists No leakage current
Typical Q is 30-40, but can reach to

Q can reach up to 200 – 300
50-60
Due to continuous downscaling, the
Tuning ranges are high (~5 for
tuning range (Cmax/Cmin) is
varactors and ~50 for switches and
decreasing – Maximum ratio is 3 at
even higher)
millimeter-wave range.
Good at low frequency (inductor
loss dominates for LC tank), but No real concern
lossy at millimeter-wave range
K. Kwok and J. Long, “A 23-to-29 GHz Transconductor-Tuned VCO MMIC in 0.13um CMOS,” IEEE Journal of Solid State Circuits,
Vol. 42, No. 12, pp. 2878-2886, 2007. 17
Why MEMS Varactors?
• Internal antenna, form factor, touch screens, etc, pose real
challenges (remember the death grip in iPhone4).
• Technologies changing rapidly, 2.5G, 3G, 4G: many carriers and

bands. Hence, antennas, filters, power amplifiers need to tune to
these bands.
• Dennis Yost, CEO of Cavendish, states: Theoretical 4G limit is

80Mbps, though testing shows ~8Mbps at best.
• Gabriel Rebeiz: a tunable front end is the holy grail of advanced

multi-mode multi-frequency mobile devices.
• Paratek shipped a tunable device to Samsung (thin-film based

varactor). Interestingly, RIM bought Paratek in 2012!
18
Why MEMS Varactors
• The RF filters are mostly ceramic or SAW filters, and are very
bulky and expensive (off-chip).
• Typical dimensions are 2cm x 1cm x 0.5 cm!
19
Why MEMS Varactors
• Add MEMS filters and receive whatever you want (no size
limitation). You can add many filters or a tunable filter.
• Quality factors > 15,000 at 1.4GHz  BW = 100kHz; better than
the current BW of 35MHz found in today’s phones. 20
The Ultimate Goal is:
A complete MEMS-based transceiver:
21
However…
• Fabrication and integration challenges: CMOS and
MEMS.
• Actuation voltages for MEMS varactors: 10V ~ 40V.
• Lifetime and reliability despite tests have been performed

for billions of cycles in lab conditions.
• Temperature stability and drift.
• Modeling vs. trial and error fabrication.
C. T. C. Nguyen, “Mechanical Radio,” IEEE Spectrum, December 2009. 22

Publications: Numbers
1000
RF MEMS Publications 884 882 862
900
Variable Capacitor Publications 814 826
Number of Publications
800
782
737 750
700
600
537
500
400 358 368 378

349 342
313 316 298 305 324
300 253
197
200 157 135 147
113 116
82
100 59
0
1993 1994 1995 1996 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Year
Source: Engineering Village

23
Publications – Where?
3000
2750 2627
2500
Number of Publications
2250
2000
1750
1500
1250
1000
808
750 621
462 450 400
500
299 272 240
250
189
0
United China France Japan Korea Germany Canada Italy India Belguim
States
Country
Source: Engineering Village.

24
Agenda
RF MEMS Capacitors
Simulation
Measurements
State of the Art

25
A MEMS Perspective
• Typical capacitors in MEMS are of the parallel-plate type:
Criterion CMOS MEMS
Etching Holes No Concern Concern

Residual-Stress
No Concern Concern
Warping
Availability of Metal
No Concern Concern
Layers
Parasitics/balanced
Concern Concern
capability
26
Etching Holes
When a sacrificial layer is present
between two structural layers, it has
to be removed. One way is to do wet-
etching: submerge wafer in an
etcher.
How much time will the etching take

for the example here if we assume
that the etching rate is 10μm/min?
27
Etching Holes
• Now, by adding etching holes
throughout the large structure,
the etchant will have more
opportunities to penetrate through
the structure. Hence, reducing the
etching time required
significantly.
• Also called release holes and

access holes.
• Concerns: affect capacitance,

mechanical performance, and
optical performance.
• What about CMOS?
28
Metal Layer Scarcity
• Self explanatory!
• Most MEMS processes possess

several polysilicon layers but a
single metal layer  obtaining
high Q is difficult.
• What about CMOS?
• InCMOS processes, there are ~9 Faraday Technology Corporation

metal layers  both capacitor www.design-reuse.com
terminals can be metal and hence

not affect Q.
29
Substrate Parasitics:
Balanced/Differential Capability
• In a typical parallel-plate capacitor, the bottom-plate/substrate

parasitic is larger than the top-plate/substrate parasitic.
• Connecting transistors to capacitors is very strict (TSMC) –

many prohibited configurations.
• The output of the circuit is NOT the same if the terminals of the
capacitor are swapped (similar to a polarized capacitor).
•Exists also in discrete capacitors.
• For both MEMS and CMOS. So, what to do?

30
Residual Stress – Examples
http://mems.ece.dal.ca/research.php
R. Al-Dahleh and R. Mansour, “High Capacitance Ratio Warped-Beam Capacitive

MEMS Switch Designs,” IEEE Journal of Microeletromechanical Systems, Vol. 19, What about CMOS?
No. 3, pp. 538-547, 2010.
31
Residual Stress – 1
•What is it?
MATERIAL 1
•First kind is: bending, or warping,
taking place when two materials α1 > α2
with different thermal expansion
coefficients, are on top of each other.
•During fabrication, heating then MATERIAL 2

cooling!
32
Residual Stress – 2
•Second kind is: bending, or warping,
taking place in a single layer while
cooling.
•During cooling, the molecules

reorient themselves in such a way
that the Young’s Modulus is not the
same everywhere within the
material (moving parts).
•Different for fixed-free, fixed-fixed,

etc beam/plate orientations.
•Severe in larger plates and longer

beams. 33
Calculate Capacitance with Warping
A. M. Elshurafa and E. I. El-Masry, “Effects of Nonuniform Nanoscale Deflections on Capacitance in RF MEMS Parallel 34
Plate Variable Capacitors,” Journal of Micromechanics and Microengineering, Vol. 18, No. 4, 2008
Elliptic paraboloid Hyperbolic paraboloid
Capacitance evaluation in 2D Capacitance evaluation in 3D
Closed Form Expressions
37
A. M. Elshurafa and E. I. El-Masry, “Effects of Nonuniform Nanoscale Deflections on Capacitance in RF MEMS Parallel
What are Fractals?
http://www.evl.uic.edu/aej/488/lecture13.html http://www.bathsheba.com/gallery/assorted/
http://www.evl.uic.edu/aej/488/lecture13.html
Fractal Capacitors
• Initially introduced in 1998 in ISSCC by
Samavati et al. while working with Tom Lee
at Stanford.
• Main Concern in capacitance density.
• Benefit from the lateral downscaling.
• Obtain lateral and vertical capacitances
(if two layers are used).
• Increase fringing.
H. Samavati, A. Hajimiri, A. Shahani, G. Nasserbakht, and T. Lee,

“Fractal Capacitors,” IEEE International Solid State Circuits 39
Conference, 256-257, 1998.
One Solution: Fractals
Moore’s Fractal
A. M. Elshurafa, A. Radwan, A. Emira, K. N. Salama, “RF MEMS Fractal Capacitors with High Self Resonant Frequencies,” IEEE 40
Journal of Microelectromechanical Systems, Vol. 21, No. 1, pp. 10-12, 2012.
4th and 5th Iteration
These capacitors are single-layer capacitors
Addressing Etching Holes
A separation exists already throughout the structure!
42
Addressing Residual Stress
The segments are small, and when

long they can be easily anchored.
43
Residual Stress Warping
Parallel Plate 5th order fractal
Addressing Metal Scarcity
Use the only available metal layer.
Addressing ‘Balance-ness’
• Black: Signal Terminal Almost same area for both

• Gray: Ground Terminal terminals, hence it is balanced.
Measurements
SRF Measurements
Self resonant frequency:

the frequency at which the impedance
of the capacitor becomes purely real
(resistive).
C Band: 4 – 8 GHz.
X Band: 8 – 12 GHz.
Ku Band: 12 – 18 GHz.
48
Parallel Plate vs. Fractal
49
More Designs – in 2 Layers
Woven Design Interleaved Design
A. M. Elshurafa and K. N. Salama, "Two-Layer RF MEMS Fractal Capacitors in PolyMUMPS for S-Band Applications," IET 50
Micro & Nano Letters, Vol. 7, No. 5, pp. 419-421, May 2012
More Designs – in 2 Layers
Measurements
Interwoven Design
Amro M. Elshurafa and K. N. Salama, "Differential RF MEMS Interwoven Capacitor Immune to Residual Stress Warping," IET Micro &
53
Nano Letters, Vol. 7, No. 7, pp. 658-661, July 2012.
Interwoven Design
54
J. de Jong and S. Baler, “Integrated Capacitor with Alternating Layered Segments,” US Patent 7,944,732, 2011.
Interwoven Design
A. M. Elshurafa and K. N. Salama, "Differential RF

MEMS Interwoven Capacitor Immune to Residual
Stress Warping," IET Micro & Nano Letters, Vol. 7,
No. 7, pp. 658-661, July 2012.
Comparison*
Criterion PP Interleaved Woven Interwoven Moore’s
C, pF 4.7 1.2 1.1 0.7 0.58
Q 7 3.5 6 9 10
SRF
5.5 10 10 >20 >20
(GHz)
* Measurement results at 2GHz
A. M. Elshurafa and K. N. Salama, "Differential RF MEMS Interwoven Capacitor Immune to Residual Stress Warping," IET Micro & Nano Letters,
Vol. 7, No. 7, pp. 658-661, July 2012.
A. M. Elshurafa and K. N. Salama, "Two-Layer RF MEMS Fractal Capacitors in PolyMUMPS for S-Band Applications," IET Micro & Nano Letters,
Vol. 7, No. 5, pp. 419-421, May 2012.
A. M. Elshurafa, A. Radwan, A. Emira, K. N. Salama, “RF MEMS Fractal Capacitors with High Self Resonant Frequencies,” IEEE Journal of
Microelectromechanical Systems, Vol. 21, No. 1, pp. 10-12, 2012.
56
Fractal Cookbook
Criterion PP Interleaved Woven Interwoven Moore’s
Could be
created in a ✗ ✔ ✗ ✗ ✔
Single Layer?
Balanced ✗ ✔ ✗ ✔ ✔
Capacitance
Value
✔✔ ✔ ✔ ✗ ✗
High SRF ✗ ✔ ✔ ✔✔ ✔✔
Could it be ✔
used in a ✔ ✔ ✗ ✔
not
varactor? readily* in two layers*
Capacity Limits
Cmax = Cmax,x + Cmax,y + Cmax,z
R. Aparicio and A. Hajimiri, “Capacity Limits and Matching Properties of Lateral Flux Integrated Capacitors,” IEEE Custom 58
Integrated Circuits Conference, pp. 365-368, 2001.
Agenda
RF MEMS Capacitors
Simulation
Measurements
State of the Art

59
Variable Capacitors
• What are they? Simply capacitors with a varying capacitance!
•They could be called variable capacitor, varactor, or varicap.
• For a capacitor, figures of merit (FOM): C, Q, SRF.
• For a varactor actuated electrostatically, we add:

• actuation voltage (VDC)
• linearity (R2)
• tuning range (TR)
60
Variable Capacitor vs. Switch!
Variable Capacitor Switch or Switched Capacitor
Two distinct capacitances only
Analog tunability (Linearity)
(digital: High and Low)
High Tuning Range (>~50:1 for
Low Tuning Range (~5:1) switches and ~15:1 for switched
capacitors)
Mostly an insulator layer in
Usually air separates both terminals
addition to air separates both
only
terminals
Dielectric charging is not a concern Dielectric charging is a concern
because no physical contact occurs because physical contact occurs
usually usually
Pull-in limits performance Pull-in is not a real limitation
Actuation Voltage
• A DC voltage is used to achieve movement, i.e. actuation.
• The change in the separating distance governs the change in

capacitance.
• Ideally, want VDC to be

as low as possible.
Typically however, it is at
least 10V, but can reach
50V and more, and very
few designs use low
voltage (~4V).
62
Linearity: C-V
• The capacitance-voltage relation in a parallel plate capacitor
when d is varying is inherently nonlinear; C = εA/d.
• One of the solutions is to use a comb-drive capacitor.
• The catch: requires  area to obtain usable C and  V for
actuation.
Rockwell Labs Varactor 63

Tuning Range (TR)
• Definition: the ratio of the maximum capacitance to the
minimum capacitance; i.e. TR = Cmax/Cmin
• Ideally, want TR to be as high as possible.
• Usually, minimum capacitance takes place when V = 0.
• Usually, maximum capacitance takes place when V = VDC:pull-in
64
TR – Pull In
• Parallel plate variable capacitors suffer from the pull-in
phenomenon, or snap-in phenomenon.
65
Deriving Pull–in: 1
Initial Capacitance A
C
xo  x
Electrostatic Force 1 C 2 1 AV 2 DC

Fe  V DC 
2 x 2 ( xo  x ) 2
Electrostatic Fe CV 2 DC
ke  
Spring Constant x ( xo  x ) 2
CV 2 DC 1
Mechanical Force km x   ke ( xo  x )
2( xo  x ) 2
2km x
What if x = (1/3)xo? ke 
( xo  x )
66
Deriving Pull–in: 2
Electrostatic and 1 AV 2 DC
FE   k M x  FM
Mechanical Forces 2 ( xo  x) 2
2k M x( xo  x) 2
Solve for the Voltage V
A
1
 2k   2 
1
2
V     x ( xo  x)
 A   
1
V  1 
1
  2k 
1
2
1. Take the derivative   x ( xo  x)  x     0
2 2
x  2   A 
2. Equate to 0 1  12 1
 x ( xo  x)  x 2
3. Solve for x 2
x
x o
3 67
Maximum TR
eps.A
Cmin 
d
eps.A
Ideally: Cmax 
2
d
3
Cmax 3
TR    1.5
Cmin 2
C max  C f C max  0.4C max

Practically however: TR1   1.3125
 C min  C f C min  0.4C max
68
How to increase TR – 1
TR = 2.83
69
A. Dec and K. Suyama, “Micromachined Varactor with Wide Tuning Range,” Electronics Letters, Vol. 33, No. 11, pp. 922-944, 1997.
TR = 2.83
1. Dec and K. Suyama, “Micromachined Varactor with Wide Tuning Range,” Electronics Letters, Vol. 33, No. 11, pp. 922-944, 1997.
2. A. Dec and K. Suyama “Micromachined Electro-mechanically Tunable Capacitors and their Applications to RF IC’s” IEEE 70
Transactions on Microwave Theory and Techniques, Vol. 46, No. 12, 1998.
TR = 4.1
Maher Bakri-Kassem and R. R. Mansour, “High Tuning Range Parallel Plate MEMS Variable Capacitors with Arrays of Supporting 71
Beams,” IEEE Conference on Microelectromechanical Systems, pp. 666-669, 2006.
TR = 4.1
Maher Bakri-Kassem and R. R. Mansour, “High Tuning Range Parallel Plate MEMS Variable Capacitors with Arrays of Supporting 72
Beams,” IEEE Conference on Microelectromechanical Systems, pp. 666-669, 2006.
Theoretical TR = ∞
J. Zou, J. Aine, J. Chen, and S. Kang, “Development of a Wide Tuning Range MEMS Tunable Capacitor for Wireless Communication,” 73
IEEE International Electron Device Meeting, pp. 403-406, 2000.
Theoretical TR = ∞
T. Tsang and M. El-Gamal, “Very Wide Tuning Range Microelectromechanical Capacitors in the MUMPS Process for RF 74
Applications,” IEEE VLSI Symposium, pp. 33-36, 2003.
TR = 1.5
G. Ionis, A. Dec, and K. Suyama, “A Zipper Action Differential Micromechanical Tunable Capacitor,” IEEE Conference on 75
Microelectromechanical Systems, pp. 29-32, 2001.
A. M. Elshurafa and E. I. El-Masry, "MEMS Variable Capacitance Devices

Utilizing the Substrate: I. Novel Devices with Customizable Tuning
Range," Journal of Micromechanics and Microengineering – JMM, Vol. 20,
No. 4, 045027 (8pp), April 2010.
76
A. M. Elshurafa and E. I. El-Masry, "MEMS Variable Capacitance Devices

Utilizing the Substrate: I. Novel Devices with Customizable Tuning
Range," Journal of Micromechanics and Microengineering – JMM, Vol. 20,
No. 4, 045027 (8pp), April 2010.
77
TR = 2.2
C. Han, D. Choi, and J. Yoon, “Parallel Plate MEMS Variable Capacitor with Superior Linearity and Large Tuning Ratio using a Levering 78
Structure,”ّّ IEEE J. Microelectromechanical Systems, Vol. 20, No. 6, pp. 1345-1354, 2011.
79
C. Han, D. Choi, and J. Yoon, “Parallel Plate MEMS Variable Capacitor with Superior Linearity and Large Tuning Ratio using a Levering
• Make use of residual stress
•After fabricating the varactor, use ALD
• Tuning range: 5:1
• Q= 29 at 1GHz
M. Bakri-Kassem and R. R. Mansour, “Linear Bilayer ALD Coated

MEMS Varactor with High Tuning Capacitance Ratio,” IEEE J. of 80
Miroelectromechanical Sytems, Vol. 18, No. 1, pp. 147-153, 2009.
•A comment on the relatively high quality factor: the substrate was
etched under the bottom plate
M. Bakri-Kassem and R. R. Mansour, “Linear Bilayer ALD Coated MEMS Varactor with High Tuning Capacitance
81
Ratio,” IEEE J. of Miroelectromechanical Sytems, Vol. 18, No. 1, pp. 147-153, 2009.
How to Increase TR – 8
A. M. Elshurafa, P. H. Ho, and K. N. Salama, "Modeling and Fabrication of an RF MEMS

Variable Capacitor with a Fractal Geometry," IEEE International Symposium on Circuits
82
and Systems – ISCAS, 2013.
F = Force
F subscript = Fringing
V Subscript = Vertical
H Subscript = Horizontal
S Subscript = Substrate
A. M. Elshurafa, A. G. Radwan. P. H. Ho, M. H. Ouda, K. N. Salama, "Low voltage puzzle-like fractal MEMS variable capacitor 83
suppressing pull-in," IET Micro & Nano Letters, Vol. 7, No. 9, pp. 965-969, September 2012.
Actuation
Before Actuation After Actuation
A. M. Elshurafa, P. H. Ho, and K. N. Salama, "Modeling and Fabrication of an RF MEMS Variable Capacitor with a
Fractal Geometry," IEEE International Symposium on Circuits and Systems – ISCAS, 2013. 84
Optical Profiler and CV Curve
85
Comparison
86
Other Requirements: Linearity
A. M. Elshurafa, P. H. Ho, and K. N. Salama, "A Low Voltage RF MEMS Variable Capacitor with a Linear C-V Response," IET 87
Electronics Letters, Vol. 48, No. 7, pp. 392-393, March 2012.
Other Requirements: Linearity
A. M. Elshurafa, P. H. Ho, and K. N. Salama, "A Low Voltage RF MEMS Variable Capacitor with a Linear C-V Response," IET 88
Electronics Letters, Vol. 48, No. 7, pp. 392-393, March 2012.
Close-up
89
A. M. Elshurafa, P. H. Ho, and K. N. Salama, "A Low Voltage RF MEMS Variable Capacitor with a Linear C-V Response,"
IET/IEEE Electronics Letters, Vol. 48, No. 7, pp. 392-393, March 2012.
Performance
A. M. Elshurafa, P. H. Ho, and K. N. Salama, "A Low Voltage RF MEMS Variable Capacitor with a Linear C-V Response," 90
IET/IEEE Electronics Letters, Vol. 48, No. 7, pp. 392-393, March 2012.
Agenda
RF MEMS Capacitors
Simulation
Measurements
State of the Art

91
Modeling of MEMS
Before that, how is CMOS modeling performed:
Cadence: Virtuoso, Hspice, Spectre, Encounter: One stop shop!
• DC/AC/Transient analysis
•Steady State Generally, the results
• Periodic Steady State
acquired from Cadence are
• Digital Flow
• Layout reasonably accurate, and
• LVS/DRC simulations do predict the
• System Level Simulation behavior of the fabricated
• Temperature Analysis chip very well.
• Inductor design
• Capacitors
• Frequency Response
• Filter Design
• Noise Analysis
• Leakage
• Monte Carlo 92
Modeling of MEMS
Let’s look at a typical MEMS problem – a thermal actuator:
Pad – Anchored
Thin Arm – Suspended
5V
Current
GND Current
Pad – Anchored
Thick Arm – Suspended
Movement Direction
93
Modeling of MEMS
• In thermal actuators: three physics are
involved:
a. Electric currents COMSOL ©
b. Thermal losses
c. Structural interaction
• Electrostatic problems:
a. Electrostatic force
b. Mechanical deflection
• Microfluidic problems
• Magnetic actuation
• Gyroscopes/accelerometers
• RF performance! 94
Modeling of MEMS
LEdit
Layout Cadence
Clewin
ANSYS
COMSOL
Coventorware
Multiphysics
MEMS Sugar
Modeling Intellisuite
HFSS
MatLab/Simulink
Equations Maple
Mathematica
SolidWorks
3D Drawing
AutoCAD 95
Typical Flow
96
Finite Element Modeling
• Given the interdisciplinary nature of MEMS, the FEM
method seems to be the most suitable way of solving
problems.
• Divide the structure to elements (i.e. mesh the structure).
• Specify boundary conditions for each physics.
• Know the solution for one element, then add all

independent solutions for a global solution.
97
Real Example
Heat Flux
Physics: Thermo Fixed Boundaries
Physics: structural
DC Voltage
Physics: Electrical Ground
98
Physics: Electrical
Tips and Tricks
• Start with a coarse mesh first, then
refine. More elements, better
accuracy, but more time and
memory.
• Start with a single physics first,

then add.
• Verify
with a known simple problem to verify your model, then
do yours.
• Make use of Symmetry.
•Do you always get a more accurate result with more elements?
99
Agenda
RF MEMS Capacitors
Simulation
Measurements
State of the Art

100
Measurements
• In order to characterize RF MEMS varactors and/or
switches, we can do a 1-port or a 2-port measurement,
and for that we need:
a. Vector network analyzer (VNA)
b. DC Voltage source
c. Appropriate Probe (1 or 2)
d. Calibration Impedance Substrate
e. Contact Substrate
f. Bias-T network
g. Correct Layout/Pads
h. Cables and adapters (VERY IMPORTANT).
• Can I use an LCR meter? 101

Microwave Probes
•The most popular probe is a ground-signal-ground probe, or a
GSG probe.
S
G G
102
Source: Gavin Fisher; Cascade Microtech
Preparing Probes - Planarity
Not planarized
Use contact
substrate to
perform this
task.
Planarized
103
Probe Preparation - Alignment
Recommended over-travel (skidding or skating)
Pitch (150μm usually)
In addition to planarization, we need to perform alignment:

• Arrive at the reference (not landed yet).
• Land (vertical)
• Skid/skate (horizontal)
• Repeat to adjust
104
Probes are ready – Calibrate!
•We can now calibrate. Let’s start with a 1-port calibration,
also could be named SOL calibration. We will:
Define a short Define an Open Define a load (50Ω)
Land on load
Land on a line that Stay in air!

shorts all tips
This is done using a calibration substrate.

105
For a 2-port Calibration:
•The only difference is that you need a Thru and you do
calibration for both probes (hence SOLT).
• For SOL, you will obtain information regarding S11 only

(i.e. reflection), while for the SOLT you obtain information
for S11 and S21 (i.e. reflection and transmission).
•You need calibration only for

RF frequencies.
106
Setup
VNA VDC
+ _ GND
DC
No DC
RF No RF
RF+DC
107
Setup
VNA VDC
+ _ GND
DC
To Check:
1. Connectors
(male or female,
size, etc)
2. Cables
RF
3. Frequency
range
4. Max Power
5. Max voltage
RF+DC
108
A Few Tips on Pads
• Too much current, and you blow your probes away!
• Your boss will not be happy.
109
A Few Tips on Pads
• Ensure you design pitch is the
same as the probes you have!
• Small pads: less parasitics.
• Big pads mean: easier

landing.
Pitch
• 70um is reasonable or use an
insulator substrate.
110
Smith Chart Considerations
• Top half of the Smith

Chart is Inductive, and
bottom half is capacitive.
L
• Resonance is the middle
horizontal line.
• Be on the outer sides for

high quality factor Q =
imaginary/real.
• Reasonable method up to
Qs of 100 or maybe 200. C
111
A Real Measurement
112
Agenda
RF MEMS Capacitors
Simulation
Measurements
State of the Art

113
WiSpry – Tuner Board
•Published in January
2013 in IEEE TMTT by
Gu and Morris.
•Built using MEMS

tunable capacitors
•Operates from 300MHz

to 500MHz.
Q. Gu and A. Morris, “A New Method for Matching Network Adaptive Control,” IEEE Transactions on Microwave Theory 114
and Techniques, Vol. 61, No. 1, pp. 587-595, 2013.
WiSpry – Antenna Tuner
•World’s smallest antenna

tuning developers’ kit for
smart phones and tablets.
•Designed for
optimization during the
development stages.
•Fits inside a true form-

factor smartphone or
tablet products.
115
Omron and Radant Switches
•Omron’s switch. Professor Rebeiz •Radant Switch.

describes it as ‘amazing’. ‘The
best RF MEMS switch in the
world’.
•Difference DC requirement between handheld devices and base

stations
116
Classic CMOS MEMS-VCOs (0.5um)
A. Dec and K. Suyama, “A 1.9GHz CMOS VCO with Micromachined

A. Dec and K. Suyama “Micromachined Electro-mechanically Tunable
Electromechanically Tunable Capacitors,” IEEE Journal of Solid
Capacitors and their Applications to RF IC’s” IEEE Transactions on
Microwave Theory and Techniques, Vol. 46, No. 12, 1998. State Circuits, Vol. 35, No. 8, pp. 1231-1237, 2000.
117
Classic CMOS-MEMS Oscillator
•Developed at UC Berkeley.
•Wang developed the resonator first circa 1989.
•Nguyen integrated both in circa 1994 (PhD

dissertation) but published later in 1999.
C. Nguyen and R. Howe, “An

Integrated CMOS
Micromechanical Resonator High-
Q Oscillator,” IEEE Journal of
Solid State Circuits, Vol. 34, No.
4, pp. 440-455, 1999.
CMOS-MEMS Variable Capacitor
•Benefit from Residual Stress.
• Thermal actuation first, then electrostatic.
J. Reinke, G. Fedder, T. Mukherjee, “CMOS MEMS 3-bit Digital Capacitors with Tuning Ratios Greater Than 60:1,” IEEE 119
Transactions on Microwave Theory and Techniques, Vol. 59, No. 5, pp. 1238-1248, 2011.
• Maskless, post-CMOS etching.

• TR = 63:1!
• Q = 160 at 1 GHz.
120
J. Reinke, G. Fedder, T. Mukherjee, “CMOS MEMS 3-bit Digital Capacitors with Tuning Ratios Greater Than 60:1,” IEEE
M. Bakri-Kassem, S. Fouladi, and R. Mansour, “Novel High Q MEMS Curled-Plate Variable Capacitors Fabricated in 0.35um
121
CMOS Technology,” IEEE Transactions on Microwave Theory and Techniques, Vol. 56, No. 2, pp. 530-541, 2008.
• Maskless, post-CMOS etching.

• TR = 6:1!
• Q = ~300 at 1.5 GHz.
122
M. Bakri-Kassem, S. Fouladi, and R. Mansour, “Novel High Q MEMS Curled-Plate Variable Capacitors Fabricated in 0.35um
CMOS Technology,” IEEE Transactions on Microwave Theory and Techniques, Vol. 56, No. 2, pp. 530-541, 2008.
Temperature Insensitivity
• Tuning Range: 3
• Q is very high > 100!
• Stable up to +125 C and processed in a university.
R. Mahameed and G. Rebeiz, “Electrostatic RF MEMS Tunable Capacitors with Analog Tunability and Low Temperature 123
Sensitivity,” IEEE International Microwave Symposium, pp. 1254-1257.
UCSD: 10W Switch!
• Tuning Range: 7
• Q is very high: >>200!
• Could handle 10W of power.
H. Zareie and G. M. Rebeiz, “High Power (>10W) RF

MEMS Switched Capacitors,” IEEE International
Microwave Symposium, 2012.
124
Tunable Filter
•Bandwidth from 1.5GHz to 2.5GHz.
•Q is around 100 using variable devices.
M. El-Tanani and G. Rebeiz “High Performance 1.5-2.5GHz RF MEMS Tunable Filters for Wireless Applications,” IEEE 125
Tunable Filters - Michigan
A. Abbaspour-Tamijani, L. Dussopt, G. M. Rebeiz, “Miniature and Tunable Filters Using MEMS Capacitors,”
IEEE Transactions on Microwave Theory and Techniques, Novl. 51, No. 7, pp. 1878-1885, 2003. 126
To Integrate or Not to Integrate -1
• IMEC:
(Interuniversity
Microlectronics
Center) provide
the SiGe-MEMS
process.
www.imec.be
• Same wafer
processing
• Why SiGe?
127
To Integrate or Not to Integrate - 2
• Invensense Nasiri Fabrication Platform: www.invensense.com
• Different wafers – superb bonding (their competitive edge).
128
To Integrate or Not to Integrate - 3
• DALSA MEMS process with CMOS 0.8: www.dalsa.com
• Same wafer, achieved through wafer packaging, vias, bonding.
• Structural layer is metal.
129
Future Outlook
• Challenges that need to be overcome are:
– Packaging: SiP, SoC, SoP, Bonding, Seamless,
Hermetic.
– Temperature Drift: Material selection and
optimization.
– Mechanical Reliability: Material selection,
actuation techniques, and fatigue.
– Voltage Actuation Requirement: intelligent MEMS
designs or high performance charge pumps*.
– CMOS Opportunities: MEMS interface circuits.
* A. Emira, M. AbdelGhany, M. Elsayed, A. M. Elshurafa, S. Sedky, and K. N. Salama, "50V All-PMOS Charge Pumps Using Low-Voltage
Capacitors," IEEE Transactions on Industrial Electronics, 2013, (10.1109/TIE.2012.2213674). 130
Conclusion
• Variable/Tunable devices are needed for
next generation wireless
communication, and RF MEMS variable
capacitance devices can satisfy the
requirements.
• To integrate seamlessly or not to

integrate: two views and I like to stand
in the middle.
131
Further Reading
1. RF MEMS: Theory, Design, and Technology (Textbook).
2. Tuning in to RF MEMS, IEEE Microwave Magazine, 2009.
3. Handling RF Power: The Latest advances in RF MEMS Tunable Filters,
IEEE Microwave Magazine, 2013.
4. RF MEMS-CMOS Device integration: An Overview of the Potential for
RF Researchers, IEEE Microwave Magazine, 2013.
5. The Search for a Reliable MEMS Switch???: Metal-Contact Switches,
IEEE Microwave Magazine, 2013.
6. Mechanical Radio, IEEE Spectrum, 2009.
7. MEMS Technology for Timing and Frequency Control, IEEE
Transactions on Ultrasonics, Ferroelectrics, & Frequency Control, 2007.
8. RF MEMS for Ubiquitous Wireless Connectivity: Parts I and II, IEEE
Microwave Magazine, 2004.
132
Thank You
References: Variable Capacitors
1. A. M. Elshurafa, P. H. Ho, and K. N. Salama, "A Low Voltage RF MEMS Variable Capacitor with a Linear CV Response," IET/IEEE Electronics
Letters, Vol. 48, No. 7, pp. 392-393, March 2012.
2. A. M. Elshurafa and E. I. El-Masry, "MEMS Variable Capacitance Devices Utilizing the Substrate: II. Zipping Varactors," Journal of
Micromechanics and Microengineering, Vol. 20, No. 4, 045028 (7pp), April 2010.
3. A. M. Elshurafa and E. I. El-Masry, "MEMS Variable Capacitance Devices Utilizing the Substrate: I. Novel Devices with Customizable Tuning
Range," Journal of Micromechanics and Microengineering, Vol. 20, No. 4, 045027 (8pp), April 2010.
4. A. M. Elshurafa and E. I. El-Masry, "Effects of Non-uniform Nanoscale Deflections on Capacitance in RF MEMS Parallel Plate Variable
Capacitors," Journal of Micromechanics and Microengineering, Vol. 18, No. 4, 040512 (11pp), April 2008.
5. A. M. Elshurafa and E. I. El-Masry, "Finite Element Modeling of Low Stress Suspension Structures and Applications in RF MEMS Parallel
Plate Variable Capacitors," IEEE Transactions of Microwave Theory and Techniques, Vol. 54, No. 5, pp. 2211-2219, May 2006.
6. A. M. Elshurafa and E. I. El-Masry, "A Novel 3-in-1 MEMS Variable Capacitance Device with Customizable Tuning Ranges," IEEE
International Device and Test Workshop, November 2009.
7. A. M. Elshurafa and E. I. El-Masry, "Design Considerations in MEMS Parallel Plate Variable Capacitors," IEEE Midwest Symposium on
Circuits and Systems (INVITED), pp. 1173-1176, August 2007.
8. A. M. Elshurafa and E. I. El-Masry, "Effects of Etching Holes on Capacitance and Tuning Range in MEMS Parallel Plate Variable
Capacitors," IEEE International Workshop on System on Chip, pp. 221-224. December 2006.
9. A. M. Elshurafa and E. I. El-Masry, "Quality Factor Estimation of Fabricated MEMS Parallel-Plate Variable Capacitors in MUMPS," IEEE
Proceedings of the 2nd Northeast Workshop on Circuits and Systems, pp. 109-112, June 2004.
10. Y. Shim, Z. Wu, and M. Rais-Zadeh, "A Multimetal Surface Micromaching Process for Tunable RF MEMS Passives," IEEE Journal of
11. J. Gauvin, F. Barriere et al., "Design, Fabrication, and Measurements of Reliable Low Voltage RF MEMS Switched Varactors," IEEE Microwave
Integrated Circuits Conference, pp. 434-437, 2011.
12. R. Stefanini, B. Chen, A. Yu, and J. Shi, "Miniature RF MEMS Metal Contact Switches for DC – 20GHz Applications," IEEE Solid State Sensors,
Actuators, and Microsystems Conference, pp. 406-409, 2011.
13. U. Shah, M. Sterner, and J Oberhammer, "Basic Concepts of Moving Side Tuneable Capacitors for RF MEMS Reconfigurable Filters," IEEE
European Microwave Conference, pp. 1087-1090, 2011.
14. Maher Bakri-Kassem and R. R. Mansour, “An Improved Design for Parallel Plate MEMS Variable Capacitors,” IEEE International Microwave
Symposium, pp. 865-868, 2004.
15. Maher Bakri-Kassem and R. R. Mansour, “High Tuning Range Parallel Plate MEMS Variable Capacitors with Arrays of Supporting Beams,”
IEEE Conference on Microelectromechanical Systems, pp. 666-669, 2006.
16. H. Hsu and D. Peroulis "A CAD Model for Creep Behavior of RF-MEMS Varactors and Circuits," IEEE Transactions on Microwave Theory and
Techniques, Vol. 59, No. 7, pp. 1761-1768, 2011. 134
References: Variable Capacitors
17. U. Shah, M. Sterner, and J Oberhammer, "Basic Concepts of Moving Side Tuneable Capacitors for RF MEMS Reconfigurable Filters," IEEE
European Microwave Conference, pp. 1087-1090, 2011.
18. J. Reinke, G. Fedder, T. Mukherjee, “CMOS MEMS 3-bit Digital Capacitors with Tuning Ratios Greater Than 60:1,” IEEE Transactions on
Microwave Theory and Techniques, Vol. 59, No. 5, pp. 1238-1248, 2011.
19. Maher Bakri-Kassem and R. R. Mansour, “An Improved Design for Parallel Plate MEMS Variable Capacitors,” IEEE International
Microwave Symposium, pp. 865-868, 2004.
20. A. Abbaspour-Tamijani, L. Dussopt, and G. Rebeiz, “Miniature and Tunable Filters using MEMS Capacitors,” IEEE Transactions on
Microwave Theory and Techniques, Vol. 51, No. 7, pp. 1878-1885.
21. I. Reines and G. Rebeiz, “A Robut Power Handling (>10W) RF MEMS Switched Capacitor,” IEEE Microelectromechanical Systems, pp. 764-
767, 2011.
22. M. Bakri-Kassem, S. Fouladi, and R. Mansour, “Novel High Q MEMS Curled-Plate Variable Capacitors Fabricated in 0.35um CMOS
Technology,” IEEE Transactions on Microwave Theory and Techniques, Vol. 56, No. 2, pp. 530-541, 2008.
23. A. Dec and K. Suyama, “A 1.9GHz CMOS VCO with Micromachined Electromechanically Tunable Capacitors,” IEEE Journal of Solid State
Circuits, Vol. 35, No. 8, pp. 1231-1237, 2000.
24. H. Zareie and G. M. Rebeiz, “High Power (>10W) RF MEMS Switched Capacitors,” IEEE International Microwave Symposium, pp. 1-3, 2012.
25. Z. Yao et al, “Micromachined Low-loss Microwave Switches,” Journal of Microelectromechanical Systems, Vol. 8, No. 2, pp. 129-134, June
1999.
26. A. Dec and K. Suyama, “Micromachined Electro-mechanically Tunable Capacitors and Their Applications to RF IC’s,” IEEE Transactions on
Microwave Theory and Techniques, Vol. 46, No. 12, pp. 2587-2596.
27. Q. Gu and A. Morris, “A New Method for Matching Network Adaptive Control,” IEEE Transactions on Microwave Theory and Techniques,
Vol. 61, No. 1, pp. 587-595, 2013.
28. M. Bakri-Kassem and R. R. Mansour, “Linear Bilayer ALD Coated MEMS Varactor with High Tuning Capacitance Ratio,” IEEE J. of
Miroelectromechanical Sytems, Vol. 18, No. 1, pp. 147-153, 2009.
29. C. Han, D. Choi, and J. Yoon, “Parallel Plate MEMS Variable Capacitor with Superior Linearity and Large Tuning Ratio using a Levering
30. G. Ionis, A. Dec, and K. Suyama, “A Zipper Action Differential Micromechanical Tunable Capacitor,” IEEE Conference on
31. T. Tsang and M. El-Gamal, “Micromechanical Variable Capacitors for RF Applications,” IEEE Midwest Symposium on Circuits and Systems,
pp. 25-28, 2002.
32. J. Zou, J. Aine, J. Chen, and S. Kang, “Development of a Wide Tuning Range MEMS Tunable Capacitor for Wireless Communication,” IEEE
International Electron Device Meeting, pp. 403-406, 2000.
33. A. Dec and K. Suyama, “Micromachined Varactor with Wide Tuning Range,” Electronics Letters, Vol. 33, No. 11, pp. 922-944, 1997. 135
References: Fixed Capacitors
1. A. M. Elshurafa and K. N. Salama, "Two-Layer RF MEMS Fractal Capacitors in PolyMUMPS for S-Band Applications," IET Micro & Nano
Letters, Vol. 7, No. 5, pp. 419-421, May 2012.
2. A. M. Elshurafa, A. G. Radwan, A. Emira, and K. N. Salama, "RF MEMS Fractal Capacitors with High Self Resonant Frequencies," IEEE J.
Microelectromechanical Systems - JMEMS, Vol. 21, No. 1, pp. 10-12, February 2012.
3. H. Samavati, A. Hajimiri, A. Shahani, G. Nasserbakht, and T. Lee, “Fractal Capacitors,” IEEE International Solid State Circuits Conference , 256-
257, 1998.
4. J. de Jong and S. Baler, “Integrated Capacitor with Alternating Layered Segments,” US Patent 7,944,732, 2011.
5. R. Aparicio and A. Hajimiri, “Capacity Limits and Matching Properties of Lateral Flux Integrated Capacitors,” Custom Integrated Circuits
Conference, pp. 365-368, 2001.
6. A. M. Elshurafa and K. N. Salama, “Differential RF MEMS Interwoven Capacitor Immune to Residual Stress Warping,” IET Micro and Nano
Letters, Vol. 7, No. 7, pp. 658-661, 2012.
136
References: Resonators and Filters
1. W. Chen, W. Fang, and S. Li, "High Q Integrated CMOS MEMS Resonators With Submicrometer Gaps and Quasi-Linear Frequency
Tuning," IEEE Journal of Microelectromechanical Systems, Vol. 21, No. 3, pp. 688-701, 2012.
2. J. Wang, J. Butler, T. Feygelson, and C. Nguyen, “1.51GHz nanocrystaline Diamond Micromechanical Disk Resonator with Material
Mismatched Isolating Support,” IEEE Conference on Microelectromechanical Systems, pp. 641-644, 2004.
3. F. Bannon, J. Clark, and C. Nguyen, “High Frequency Microelectromechanical IF Filters,” IEEE International Electron Device
Meeting, pp. 773-776, 1996.
4. V. Sekar, M. Armendariz, and K. Entesari, "A 1.2 – 1.6 GHz Substrate integrated Waveguide RF MEMS Tunable Filter," IEEE
5. K. Chan, S. Fouladi, R. Ramer, and R. Mansour, "RF MEMS Switchable Interdigital Bandpass Filter," IEEE Microwave and
Wireless Components Letters, Vol. 22, No. 1, pp. 44-46, 2012.
6. K. Chan, S. Fouladi, R. Ramer, and R. Mansour, "RF MEMS Switchable Interdigital Bandpass Filter," IEEE Microwave and
Wireless Components Letters, Vol. 22, No. 1, pp. 44-46, 2012.
7. W. Chen, W. Fang, and S. Li, "High Q Integrated CMOS MEMS Resonators With Submicrometer Gaps and Quasi-Linear Frequency
Tuning," IEEE Journal of Microelectromechanical Systems, Vol. 21, No. 3, pp. 688-701, 2012.
8. F. Bannon, J. Clark, and C. Nguyen, “High Frequency microelectromechanical IF Filters," IEEE International Electron Device
Meetings, pp. 773-776, 1996.
9. R. Agner et al., "Advancements of MEMS in RF-filter Applications," IEEE International Electron Device Meeting, pp. 897-900,
December 2002.
10. M. El-Tanani and G. Rebeiz “High Performance 1.5-2.5GHz RF MEMS Tunable Filters for Wireless Applications,” IEEE TMTT, Vol.
58, No. 6, pp. 1629-1637, 2010.
11. C. Nguyen and R. Howe, “An Integrated CMOS Micromechanical Resonator High-Q Oscillator,” IEEE Journal of Solid State
Circuits, Vol. 34, No. 4, pp. 440-455, 1999.
137
References: General
1. C. T. C. Nguyen, “RF MEMS for Wireless Applications,” Device Research Conference Digest, pp. 9-12, June 2002.
2. J. Smith, “Embedded Micromechanical Devices for the Monolithic Integration of MEMS with CMOS,” Proceedings of the IEEE
International Electron Device Meeting, pp 609-612, December 1995.
3. K. Van Caekenberghe, "Modeling RF MEMS Devices," IEEE Microwave Magazine, Vol. 13, No. 1, pp. 83-110, 2012.
4. K. Van Caekenberghe, "RF MEMS on the Radar," IEEE Microwave Magazine, Vol. 10, No. 6, pp. 99-116, 2009.
5. E. Lourandakis, R. Weigel, H. Mextorf, R. Knoechel, "Circuit Agility," IEEE Microwave Magazine, Vol. 13, No. 1, pp. 111-121, 2012.
6. C. T. C. Nguyen, "Micromechanical Circuits for Communication Transceivers," IEEE Proceedings of the BiCMOS Circuits and
Technology Meeting, pp. 142-149, 2000.
7. Interuniversity Microelectronic Center: www.imec.be
8. Yole Dévelopoment. Website: www.yole.fr.
9. WiSpry. Website: www.wispry.com.
10. Invensense: www. Invensense.com
11. RF MEMS Magazine. Website: www.scoop.it.
138

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Amro M.

RF MEMS Capacitors and Variable

About the author:

RF MEMS Variable Capacitors

State of the Art

Etch away sacrificial layer to

• The PolyMUMPS process from

• Has been in business since 1992.

• Very reliable and robust.

• Used by hundreds of groups

• What about CMOS? Can we have

Less power consumption

F. Bannon, J. Clark, and C. Nguyen, “High Frequency Microelectromechanical IF Filters," IEEE

J. Zou, J. Nickel, D. Trainor, C. Liu, and J. Schutte-Aine,

Leakage currents exists No leakage current

Typical Q is 30-40, but can reach to

• Technologies changing rapidly, 2.5G, 3G, 4G: many carriers and

• Dennis Yost, CEO of Cavendish, states: Theoretical 4G limit is

• Gabriel Rebeiz: a tunable front end is the holy grail of advanced

• Paratek shipped a tunable device to Samsung (thin-film based

• Actuation voltages for MEMS varactors: 10V ~ 40V.

• Lifetime and reliability despite tests have been performed

• Temperature stability and drift.

• Modeling vs. trial and error fabrication.

C. T. C. Nguyen, “Mechanical Radio,” IEEE Spectrum, December 2009. 22

400 358 368 378

Source: Engineering Village

Source: Engineering Village.

RF MEMS Variable Capacitors

State of the Art

Criterion CMOS MEMS

Etching Holes No Concern Concern

How much time will the etching take

• Also called release holes and

• Concerns: affect capacitance,

• What about CMOS?

• Most MEMS processes possess

• What about CMOS?

• InCMOS processes, there are ~9 Faraday Technology Corporation

terminals can be metal and hence

• In a typical parallel-plate capacitor, the bottom-plate/substrate

• Connecting transistors to capacitors is very strict (TSMC) –

•Exists also in discrete capacitors.

• For both MEMS and CMOS. So, what to do?

R. Al-Dahleh and R. Mansour, “High Capacitance Ratio Warped-Beam Capacitive

•During fabrication, heating then MATERIAL 2

•During cooling, the molecules

•Different for fixed-free, fixed-fixed,

•Severe in larger plates and longer

Elliptic paraboloid Hyperbolic paraboloid

Capacitance evaluation in 2D Capacitance evaluation in 3D

H. Samavati, A. Hajimiri, A. Shahani, G. Nasserbakht, and T. Lee,

These capacitors are single-layer capacitors

A separation exists already throughout the structure!

The segments are small, and when

Parallel Plate 5th order fractal

Use the only available metal layer.

• Black: Signal Terminal Almost same area for both

Self resonant frequency:

Woven Design Interleaved Design

Woven Design Interleaved Design

Woven Design Interleaved Design

A. M. Elshurafa and K. N. Salama, "Differential RF

C, pF 4.7 1.2 1.1 0.7 0.58