Name

Admission/No.
Date
Marks
Cumulative CAT marks

1. State the use of the following films in the manufacture of semiconductor materials:
i. Silicon dioxide
ii. Silicon nitride.

2. State the THREE methods of:

i. Physical vapour deposition of metals
ii. Chemical vapour deposition of tungsten.

3. State the demerits of copper compared to aluminium, when used as metallic contacts in
the manufacture of ultra large scale integrated circuits.

4. Explain, with the aid of chemical equations where applicable, the steps leading to the
production of electronic grade silicon from silicate.

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5. Explain why silicon is preferred over carbon and germanium, in the production of
semiconductor materials.

6. Explain the use of collimator in metallic ion sputtering

7. With the aid of a diagram, explain the difference between the process of thermal and
chemical vapour deposition oxidation.

2
8. With the aid of a diagram describe the Bridgman technique of growing a single crystal
gallium arsenide.

9. Determine the concentration of a dopant in molten silicon in terms of the initial

concentration in the melt, in the Czochralski method of single crystal growth, when the
weight of solid is half the weight of the initial melt and the segregation coefficient is 3.

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10. Explain the three ways of enabling conduction through a Via.