[p-esue] TORRE oso wc a | de [2c | peeurcmse > | u |aeaQimuwesiaeeed [Av eaRd As Y i | | 2 FIG. 3.35 Kleal collector characteristics forte transistor of Pia, 3.38 PROBLEMS e Nore: Asterisks indicate more difficult problems, 5.2. Transistor Construction 1. What names are applied to the two types of BJT tunsistors? Sketch the basie constuction «ch and label the various minority nd majority carriers in each, Draw the graphic symbol ¥y ofthis information altered by changing fom a silicon 8 germanium base? toeach. Is 2 What isthe major differonce between a bipolar and a unipolar device? 5.3. Transistor Operation 4. How must the Ho tansistrjunetions be biased for proper transistor amplifier operation’ 3 4. What i the source ofthe leakage current in 2 transistor? ire similar to Fi. 3.3 forthe Forwaed-biased junction of an pw tansistor, Des 6, ‘Sketch a figure similar to Fig. 34 forthe revers-hiased junction of an npn tnsisor, Dee the resulting cartier motion, 7. Sketch a figure similar to Fig, 3.5 forthe majoity-and minority-carrier Now of an npn tas tor. Doserbe the resulting carrier motion. 8. Which ofthe transistor currents is always the largest? Which is alway the smallest? Which currents are relatively close in magnitude? 9. {tthe emitter current of a transntor is ¥ mA and Js W/HKD ff. deesmine the Feels oJ 5.4 Common-Base Configuration 10, From memor ‘conventional Now direction For each curren sketch the transistor symbol fora pnp and an npn transistor, and then insetYsing the characterises of Hig. 3.7. determine Vix tt fy = Sm for Voy = 1. 10s and 20.15, reasonable 10 assume on an approximate basis that Vig fas ony a sight effect on the rela- eship between Vpy and fe? Determine the average a resistance for the characteristics of Fi. 3.10b, For networks in which the magnitude of the resistive elements typically in kilohins is the approximation of Fig. 3106 a valid one [based on the results of par)? Using the eharactristies of Fig. 3.8, determine the resltin and Vey = 4. Repes part) collector current, = 45 mA S mA and Voy = 16 fn Vey atfocted the result Hows have the chan level of he? (On am upproximate basis, how are J, an J Felated ase! on the results above? Using the characteristcy of Figs. 3.7 and 3.8, determine cif Vey = 1OV and Vag = 80m. Determine Vig if fo = SMA and Voy = 10. Repeat part (h) using the characteristics of ig. 3.106, Repeat part (h) using the characteristics of Fig. 3.108 ‘Compare the solutions for Vy or part (b) through i). Can he difference be ignored if volt- age Kevels greater than a few volts ae typically encountered? Given an ay, of 0.998, determine fc if J, = 4 mA. Determine ey if J, = 28 mA and fy = 20 pA. fe Find fy if Fy = 40 A and ey, is O98, From memory only sketch the common-hase BJT transistor configaration (for npn and pp) and indicate the polarity ofthe applied bits und resulting curent directions. ‘Transistor Amplifying Action Eatculate the voltage esin (A, = V/V) for the network of Fig, 3.12 46, = 500 mV and R= 1K. (The other circuit values remain the same.) Calculate the voltae gain (A, = V/V) forthe network of tal resistance of 100 £2 in series with V 3.12 ifthe source has am inter. Common-Emitter Configuration Detine fey and Jey, How re they diferent? How are the magnitude? related Are they typically lose in Using the characteristics of Fig, 3.14 ‘& Find the value off. corresponding to Vay = +750 mV and Vi, ~ +3¥ 2. Find the value of Vey and Vgr corresponding Wo fo = 3 mA ad Jy = 30 pA. 4 For the common-emitter characteris of Fi, 3.14, find the de beta at an operating point O Vie = +8 Vand f= 2 ma. Find the value of a voresponding to this operating poi AL Vey = 18 V. find the corresponding vale of Fey, Calculate the approximate value of fey using the de beta value obtained in pt (a. ‘8 Using the characterises of Fig, 34a, determine fos at Vex = IDV. Determine Bat Jy = 10 wA and Voy = 10. + Using the Bx. determined in part (bh, caleate Fr Using the characteristics of Fig. 3. 14a, determine By at fy Repeat pur (a) at Jy ~ Ssh and Ven = 15 V & Repeat part (a) ay = 30 cA and Ve = 10, Reviewing the results of part (a) throuzh (c). dos the value of fy change fmm point to point con the ear the higher values found? Can you develop any gene ‘lusions about the value of Bi. ona set of characteristics such as those provided in Using the characteristics of Hg. 3.144, determine Bat fy = 80 HA and Vp, Repeat pat (a) a fy = $ eA and Vex = 15 V Repeat part (a) at fy = 30 A and Vey = 10. Reviewing the results of parts (a) thous SOWA and Vy, = SV, crises? Where we Rae? (eh does the value of change From point 10 Point on the characteristics? Where are the high values locsted! Can you develop any gen eral conclusions about the value of Bon ase af eollector characte "he chosen points in this exercise are the same as those emplayed in Problem 23. 1f Prob lem 23 was performed. compare the levels of and. foreach point ann comment on the trend in magnitode for each quantity Using the characteristics of Fig. 3.14a, determine By. at Jy = 25 A and Voy = 10-V, Then calculate x, and the resulting level of (Use the level of I determined by Je= Byte)134 BIPOLAR JUNCTION TRANSISTORS FIG. 3.6 [Novation nc symbols sed with the common-base configuration: (a) mp tmansstor: ) npn transisor For general-purpose transistors, J; is measured in milliamperes and Icy is measured in microamperes or nanoamperes. Ip, like /, for a reverse-hiased diode, is temperature sensi tive and must be examined carefully when applications of wide temperature ranges are con- sidered. Itcan severely affect the stability ofa system at high temperature if not considered properly. Improvements in construction techniques have resulted in significantly lower lev ignored, els of fry 10 the point where its effect can often be 34 IMON-BASE CONFIGURATION com ‘ONFIGU! - e ‘The notation and symbols used in conjunction with the transistor in the majority of texts ‘and manuals published today are indicated in Fig. 3.6 for the common-base contiguration with pnp and npr transistors. The common-base terminology is derived from the fact that the base is common to both the input and output sides of the configuration. [n addition, the base is usually the terminal closest to, or a, ground potential. Throughout this book all cur rent directions will refer to conventional (hole) flow rather than electron flow, This choice was based primarily om the fact that the vast amount of literature available at edu and! industrial institutions employs conventiona ows in all eleewoni sym bols have a direction defined by this convention, Recall thatthe arrow in the diexle symbul defined the direction of conduction for conventional eurent. For the transistor flow, and the a The arrow in the graphic symbol defines the direetion of emiter current (conventional flow) through the device All the current directions appearing in Fig. 3.6 are the actual directions as defined by the ‘choice of conventional flow. Note in each case that fy = f+ fy. Note also that the applied biasing (voltage sources) are such as to establish current inthe direction indicated for euch branch, That is, compare the direction of J, to the polarity of Vor each configuration and the direction of f. to the polarity of Vec ‘To fully describe the behavior of a three-terminal device such as the cor plifiers of Fig. 3.6 requires two sets of characteristics—one for the driving point or input narameters and the other for the ouiput side. The input set for the common-base amplific as shown in Fig. 3.7 relates an input current (J,) to an input voltag ‘of output voltage (Vy). on-base any 1¢(Vgy) for various levels Je nay FIG. 3.7 Input or driving point curacteristies for a common-base silicon transistor amplifier The output set relates an output eurrent (J) 10 an output voltage (V,) for various levels of input current (/,) as shown in Fig. 3:8. The output or collector set of characteristics has three basic regions of interes, as indicated in Fig. 3.8: the active, cutof’ and saturation regions. The ‘active region is the region normally employed for linear (undistorted) amplifirs. ln pasticulr In the active region the base-emitter junction is forward-biaved, whereas the cnllector-base junction is reverse-biased,