SPP07N60C3

SPI07N60C3, SPA07N60C3

Cool MOS™ Power Transistor VDS @ Tjmax 650 V

Feature RDS(on) 0.6 Ω
• New revolutionary high voltage technology ID 7.3 A
• Ultra low gate charge
• Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220

• Extreme dv/dt rated 2

• High peak current capability 1

2
3
23
1
• Improved transconductance P-TO220-3-31
P-TO220-3-1

• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

Type Package Ordering Code Marking

SPP07N60C3 PG-TO220-3 Q67040-S4400 07N60C3
SPI07N60C3 PG-TO262 Q67040-S4424 07N60C3
SPA07N60C3 PG-TO220FP SP000216303 07N60C3

Maximum Ratings
Parameter Symbol Value Unit
SPP_I SPA
Continuous drain current ID A
TC = 25 °C 7.3 7.31)
TC = 100 °C 4.6 4.61)
Pulsed drain current, tp limited by Tjmax ID puls 21.9 21.9 A
Avalanche energy, single pulse EAS 230 230 mJ
ID=5.5A, VDD =50V

Avalanche energy, repetitive tAR limited by Tjmax2) EAR 0.5 0.5

ID=7.3A, VDD =50V

Avalanche current, repetitive tAR limited by Tjmax IAR 7.3 7.3 A

Gate source voltage static VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30
Power dissipation, TC = 25°C Ptot 83 32 W
Operating and storage temperature T j , Tstg -55...+150 °C
Reverse diode dv/dt 6) dv/dt 15 V/ns

Rev. 3.2 Page 1 2009-11-27

Rev. 3.3 Page 1 2018-02-13
 SPP07N60C3
SPI07N60C3, SPA07N60C3

Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 50 V/ns
V DS = 480 V, ID = 7.3 A, Tj = 125 °C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1.5 K/W
Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.9
Thermal resistance, junction - ambient, leaded RthJA - - 62
Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm 2 cooling area 3) - 35 -
Soldering temperature, wavesoldering Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at T j=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche V(BR)DS VGS=0V, ID=7.3A - 700 -
breakdown voltage
Gate threshold voltage VGS(th) ID=350µA, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current I DSS VDS=600V, VGS=0V, µA
Tj=25°C - 0.5 1
Tj=150°C - - 100
Gate-source leakage current I GSS VGS=30V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A Ω
Tj=25°C - 0.54 0.6
Tj=150°C - 1.46 -
Gate input resistance RG f=1MHz, open drain - 0.8 -

Rev. 3.2 Page 2 2009-11-27

Rev. 3.3 Page 2 2018-02-13
 SPP07N60C3
SPI07N60C3, SPA07N60C3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g fs V DS≥2*I D*RDS(on)max, - 6 - S
ID=4.6A

Input capacitance Ciss V GS=0V, V DS=25V, - 790 - pF

Output capacitance Coss f=1MHz - 260 -
Reverse transfer capacitance Crss - 16 -
Effective output capacitance,4) Co(er) V GS=0V, - 30 -
energy related V DS=0V to 480V

Effective output capacitance,5) Co(tr) - 55 -

time related
Turn-on delay time td(on) V DD=380V, V GS=0/13V, - 6 - ns
Rise time tr ID=7.3A, RG=12Ω, - 3.5 -
Turn-off delay time td(off) Tj=125°C - 60 100
Fall time tf - 7 15

Gate Charge Characteristics

Gate to source charge Qgs VDD=480V, ID=7.3A - 3 - nC
Gate to drain charge Qgd - 9.2 -
Gate charge total Qg VDD=480V, ID=7.3A, - 21 27
VGS=0 to 10V

Gate plateau voltage V(plateau) VDD=480V, ID=7.3A - 5.5 - V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
5C
o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.
6I <=I , di/dt<=400A/us, V
SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.

Rev. 3.2 Page 3 2009-11-27

Rev. 3.3 Page 3 2018-02-13
 SPP07N60C3
SPI07N60C3, SPA07N60C3

Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25°C - - 7.3 A
forward current
Inverse diode direct current, ISM - - 21.9
pulsed
Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V
Reverse recovery time trr VR=480V, IF=IS , - 400 600 ns
Reverse recovery charge Qrr diF/dt=100A/µs - 4 - µC
Peak reverse recovery current Irrm - 28 - A
Peak rate of fall of reverse dirr /dt Tj=25°C - 800 - A/µs
recovery current

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
SPP_I SPA SPP_I SPA
Rth1 0.024 0.024 K/W Cth1 0.00012 0.00012 Ws/K
Rth2 0.046 0.046 Cth2 0.0004578 0.0004578
Rth3 0.085 0.085 Cth3 0.000645 0.000645
Rth4 0.308 0.195 Cth4 0.001867 0.001867
Rth5 0.317 0.45 Cth5 0.004795 0.007558
Rth6 0.112 2.511 Cth6 0.045 0.412

Tj R th1 R th,n E xternal H eatsink

T case
P tot (t)

C th1 C th2 C th,n

T am b

Rev. 3.2 Page 4 2009-11-27

Rev. 3.3 Page 4 2018-02-13
 SPP07N60C3
SPI07N60C3, SPA07N60C3

1 Power dissipation 2 Power dissipation FullPAK

Ptot = f (TC) Ptot = f (TC)

SPP07N60C3
100 34
W W

28
80

70 24
Ptot

Ptot
60 20

50
16

40
12
30
8
20

4
10

0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

3 Safe operating area 4 Safe operating area FullPAK

ID = f ( V DS ) ID = f (VDS)
parameter : D = 0 , TC =25°C parameter: D = 0, TC = 25°C
2
10 10 2

A A

10 1 10 1
ID

ID

10 0 10 0

tp = 0.001 ms
tp = 0.001 ms
tp = 0.01 ms
tp = 0.01 ms
10 -1 tp = 0.1 ms 10 -1 tp = 0.1 ms
tp = 1 ms
tp = 1 ms
DC
tp = 10 ms
DC

10 -2 0 1 2 3
10 -2 0 1 2 3
10 10 10 V 10 10 10 10 V 10
VDS VDS

Rev. 3.2 Page 5 2009-11-27

Rev. 3.3 Page 5 2018-02-13
 SPP07N60C3
SPI07N60C3, SPA07N60C3

5 Transient thermal impedance 6 Transient thermal impedance FullPAK

ZthJC = f (t p) ZthJC = f (t p)
parameter: D = tp/T parameter: D = tp/t
1
10 10 1

K/W K/W

10 0 10 0
ZthJC

ZthJC
10 -1 10 -1
D = 0.5
D = 0.2 D = 0.5
D = 0.1 D = 0.2
D = 0.05 D = 0.1
D = 0.02 D = 0.05
10 -2 D = 0.01 10 -2 D = 0.02
single pulse D = 0.01
single pulse

10 -3 -7 -6 -5 -4 -3 -1
10 -3 -7 -6 -5 -4 -3 -2 -1 1
10 10 10 10 10 s 10 10 10 10 10 10 10 10 s 10
tp tp

7 Typ. output characteristic 8 Typ. output characteristic

ID = f (VDS); Tj=25°C ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS
24 13
A
20V 20V
A 10V 8V
8V 7V 11 6.5V
10 6V

6,5V 9
16
ID

ID

8
5.5V
7
12 6V
6

5 5V
8 5,5V
4

3 4.5V
5V
4 2
4V
4,5V
1

0 0
0 5 10 15 VDS 25 0 2 4 6 8 10 12 14 16 18 20 22 V 25
V VDS

Rev. 3.2 Page 6 2009-11-27

Rev. 3.3 Page 6 2018-02-13
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SPI07N60C3, SPA07N60C3

9 Typ. drain-source on resistance 10 Drain-source on-state resistance

RDS(on)=f(ID) RDS(on) = f (Tj)
parameter: Tj=150°C, VGS parameter : ID = 4.6 A, VGS = 10 V
SPP07N60C3
10 3.4
Ω 4V Ω

4.5V 2.8
8

RDS(on)
RDS(on)

7 2.4

5V
6 2
6V
5
6.5V 1.6
8V
4 5.5V
20V
1.2
3
0.8 98%
2
typ
0.4
1

0 0
0 2 4 6 8 10 12 A 15 -60 -20 20 60 100 °C 180
ID Tj

11 Typ. transfer characteristics 12 Typ. gate charge

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate)
parameter: tp = 10 µs parameter: ID = 7.3 A pulsed
SPP07N60C3
24 16
A
V
20 25°C

18 12
VGS

16 0,2 VDS max

ID

10 0,8 VDS max

14
150°C
12 8

10
6
8

6 4

4
2
2

0 0
0 2 4 6 8 10 12 14 16 V 20 0 4 8 12 16 20 24 28 nC 34
VGS Q Gate

Rev. 3.2 Page 7 2009-11-27

Rev. 3.3 Page 7 2018-02-13
 SPP07N60C3
SPI07N60C3, SPA07N60C3

13 Forward characteristics of body diode 14 Typ. switching time

IF = f (VSD) t = f (ID), inductive load, T j=125°C
parameter: Tj , tp = 10 µs par.: V DS=380V, VGS=0/+13V, R G=12Ω
2 SPP07N60C3
10 90

ns
A
td(off)
70

10 1 60
IF

t
50

40

10 0 30
tf
Tj = 25 °C typ
td(on)
Tj = 150 °C typ 20 tr
Tj = 25 °C (98%)
Tj = 150 °C (98%) 10

10 -1 0
0 0.4 0.8 1.2 1.6 2 2.4 V 3 0 1 2 3 4 5 6 A 8
VSD ID

15 Typ. switching time 16 Typ. drain current slope

t = f (RG), inductive load, Tj=125°C di/dt = f(R G), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=7.3 A par.: V DS=380V, VGS=0/+13V, ID=7.3A
500 3000
ns
A/µs
400

350
2000
di/dt

300
t

250 td(off) 1500

200 di/dt(on)
1000
150
td(on)
100 tf
tr 500
di/dt(off)
50

0 0
0 20 40 60 80 100 Ω 130 0 20 40 60 80 100 Ω 130
RG RG

Rev. 3.2 Page 8 2009-11-27

Rev. 3.3 Page 8 2018-02-13
 SPP07N60C3
SPI07N60C3, SPA07N60C3

17 Typ. drain source voltage slope 18 Typ. switching losses

dv/dt = f(RG), inductive load, Tj = 125°C E = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=7.3A par.: V DS=380V, VGS=0/+13V, R G=12Ω
100 0.025
*) E on includes SDP06S60
V/ns diode commutation losses.

mWs
80

70
dv/dt

E
60 0.015

50
dv/dt(on)

40 0.01 Eoff

30

20 0.005
dv/dt(off) Eon*
10

0 0
0 20 40 60 80 Ω 120 0 1 2 3 4 5 6 A 8
RG ID

19 Typ. switching losses 20 Avalanche SOA

E = f(RG), inductive load, Tj=125°C IAR = f (tAR)
par.: VDS=380V, VGS=0/+13V, ID=7.3A par.: Tj ≤ 150 °C
0.2 8
*) Eon includes SDP06S60
mWs diode commutation losses.
A

0.16 Tj(START)=25°C
6
0.14
IAR

5
E

0.12 Tj(START)=125°C

0.1 4
Eoff
0.08
3

0.06
Eon*
2
0.04

1
0.02

0 0 -3 -2 -1 0 1 2 4
0 20 40 60 80 100 Ω 130 10 10 10 10 10 10 µs 10
RG t AR

Rev. 3.2 Page 9 2009-11-27

Rev. 3.3 Page 9 2018-02-13
 SPP07N60C3
SPI07N60C3, SPA07N60C3

21 Avalanche energy 22 Drain-source breakdown voltage

EAS = f (Tj) V(BR)DSS = f (Tj)
par.: ID = 5.5 A, V DD = 50 V
SPP07N60C3
260 720
mJ
V
220

200 680

V(BR)DSS
180
EAS

660
160

140 640

120
620
100
600
80

60 580
40
560
20

0 540
20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 180
Tj Tj

23 Avalanche power losses 24 Typ. capacitances

PAR = f (f ) C = f (VDS)
parameter: E AR=0.5mJ parameter: V GS=0V, f=1 MHz
500 10 4

pF

W Ciss
3
10
PAR

300

10 2
Coss
200

10 1
Crss
100

0 4 5 6
10 0
10 10 MHz 10 0 100 200 300 400 V 600

f VDS

Rev. 3.2 Page 10 2009-11-27

Rev. 3.3 Page 10 2018-02-13
 SPP07N60C3
SPI07N60C3, SPA07N60C3

25 Typ. Coss stored energy

Eoss=f(VDS)

5.5
µJ

4.5

4
Eoss

3.5

2.5

1.5

0.5

0
0 100 200 300 400 V 600
VDS

Definition of diodes switching characteristics

Rev. 3.2 Page 11 2009-11-27

Rev. 3.3 Page 11 2018-02-13
 SPP07N60C3
SPI07N60C3, SPA07N60C3

PG-TO220-3-1, PG-TO220-3-21 : Outline

Rev. 3.2 Page 12 2009-11-27

Rev. 3.3 Page 12 2018-02-13
 SPP07N60C3
SPI07N60C3, SPA07N60C3

Outline PG­TO220 FullPAK

1 2 3

MILLIMETERS
DIMENSIONS
MIN. MAX.
DOCUMENT NO.
A 4.50 4.90
Z8B00003319
A1 2.34 2.85
A2 2.42 2.86 REVISION
b 0.65 0.90 07
b1 0.95 1.38
b2 0.95 1.51 SCALE 5:1
b3 0.65 1.38 0 1 2 3 4 5mm
b4 0.65 1.51
c 0.40 0.63
D 15.67 16.15
D1 8.97 9.83 EUROPEAN PROJECTION
E 10.00 10.65
e 2.54
H 28.70 29.75
L 12.78 13.75
L1 2.83 3.45
øP 3.00 3.30 ISSUE DATE
Q 3.15 3.50 27.01.2017

Rev. 3.2 Page 13 2009-11-27

Rev. 3.3 Page 13 2018-02-13
 SPP07N60C3
SPI07N60C3, SPA07N60C3

PG-TO-262-3-1/PG-TO262-3-21 (I²-PAK)

Rev. 3.2 Page 14 2009-11-27

Rev. 3.3 Page 14 2018-02-13
600VCoolMOSªC3PowerTransistor
SPx07N60C3

RevisionHistory
SPx07N60C3

Revision:2018-02-27,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
3.3 2018-02-27 Outline PG-TO-220 FullPAK update

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TrademarksupdatedAugust2015

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15 Rev.3.3,2018-02-27