TOSHIBA AN25,4N25A,4N26,4N27,4N28(Short) TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N25(Short), 4N25A(Short), 4N26(Short), 4N27(Short), 4N28(Short) AC LINE / DIGITAL LOGIC ISOLATOR Uni DIGITAL LOGIC/ DIGITAL LOGIC ISOLATOR ‘TELEPHONE LINE RECEIVER. TWISTED PAIK LINE RECEIVER. HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. z RELAY CONTACT MONITOR. 2 TS 5 ‘The TOSHIBA 4N35 (Short) through 4N28 hort) consists of rannnan, $8) rane. gallium arsenide infrared emitting diode coupled with a silicon | 3 phototransistor in a dual in-line package. 5 's © Switching Spoods : 8s (Typ.) oszasl Usesoirg | ooo © DC Current Transfer Ratio : 100% (Typ.) wees ¢ Isolation Resistance 210412 (Min.) ¢ Isolation Voltage +: 2500Vims (Min.) 8 © UL Recognized : ULI5T77, File No. E67349 TOSHIBA __LU-7A8 Weight : 0.4g PIN CONFIGURATIONS (Top view) : ANODE, : CATHODE NC. EMITTER COLLECTOR, : BASE TRS OE Pe are Le {RHR prose 9 corere anrdr of salen, and to vols stuaonrn which malfunction fie gf = TOHHBA. produc coud catne Tok tana a ie ene me tei ei tn et, tes rte aed Ce (© Glium srsenide (Gass) "ss substance ised in the products dexribed in this document, GaAs dust and fumes are toxe Do not break, cut oF Secrest Satta nota ss SN Set SS ee st 93 eth Ss CSeSmRP ip iets: fete ctype a Sete Oa al SPS rt StS 0 Heiter Sante’ wee ee ete lca ee 7998-02-27 16TOSHIBA AN25,4N25A,4N26,4N27,4N28(Short) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL | RATING | UNIT Forward Current (Continuous) Tr 80 mA Forward Current Derating ap eC 1.07 ()_fmaTC| © [Peak Forward Current (Nove 1) TPF 3 A 5 [Power Dissipation Pp, 150 mW Power Dissipation Derating aPy iC 2.0.6) _paW/ Reverse Voltage Vr 2 Vv & |Collector-Bmitter Voltage BVCEO 30 Vv [Collector-Base Voltage BYcBO. 70 Vv © [Emitter-Collector Voltage BVECO 7 Vv 58 [Collector Current (Continuous) TC 100 mA & [Power Dissipation Po. 150 mW & [Power Dissipation Derating aPcrC 2.0) _faW/ | Storage Temperature Range Tatg =55~150 | °C & | Operating Temperature Range Tope -55~100_| °c = [Lead Soldering Temperature (10s) Teo 260 °C 5 [Total Package Power Dissipation Pr. 250 mW 8 Poa Peknee Power Dissipation app" 330 pwr (Note 1) Pulse width 300s, 2% duty eycle. (*) Above 25°C ambient. 7998-02-27 2/6TOSHIBA AN25,4N25A,4N26,4N27,4N28(Short) ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION, MIN. | TYP. |MAX.| UNIT) = [Forward Voltage Vp |ip= toma = asp is, Vv 2 [Reverse Current Tr _ — | 100 | «A > [Capacitance Cp ‘V=0, f=IMHz = | 30[ — | oF DC Forward Current Gain | bre | VGR=5V, Iq=6002K aa — Collector-Emitter iz [Breakdown Voltage V (BR) CEO|Ic=1mA, Ip=0 so} —| -—| Vv Collector-Base Breakdown ¢ [Gere (BR) cBOlTO=10024 w|—]|—|v 8 Emitter-Collector a r =100p —|f- & [Breakdown Voltage (BR) ECO|1E= 100A 7 v #2 [Collector Dark Current | Tong | Vow=10V = [am [an Collector Dark Current | Igo | VcR=10V — [oa [20 | mA Collector-Emitter Conecttanee coe [V=0, f=1MH2 — | w| — | Current Transfer Ratio | Ig7iy _[ip—0mA, Vog—10v 20 | 100; — | Collector-Emitter — om, Satination Voltage Vor (sat) |IP=50mA, 1¢=2mA — | 01] 05 | v Capacitance Input to ee Output cg Vg=0, f=1MHz — | os| — | wr © [Isolation Resistance Rg Vg=500V, RH =60% weft —[— fa 3 BVg [AC 1 minute 2500 | — | — [Vrms 5 Ioolati 4N25, 4N25A 2500 | — = Nee | AN26, 4N27 AC, Peak 1500 | — | — | vpk 9 | voltas my [AC oo Voltage 4N28 BYS() 500 | — = aNZ5A ‘AG, 1 second i775 | — | — | Vrms 5 sm ; Ven=10V, 1¢— mk — = Rise/Fall Time trite [RoR ey 2 Hs : . Vop=10V, Iop=50:A Rise/Fall Time teste [ROBT NY — | 200] — | as (*) JEDEC registered minimum BVg, however, TOSHIBA specifies a minimum BVg of 2500Vrms, 1 minute. 7998-02-27 3/6