Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17

By D. A. Neamen Problem Solutions

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Chapter 17
17.1
0 − (− 0.2 )
(a) R C = = 2kΩ
0.1
(b) (i) υ1 = −1 V, Q1 off, Q 2 on
υ O 2 = 0 − (0.2 )(2) = −0.4 V
υ O1 = 0
(ii) υ1 = −0.4 V, Q1 on, Q 2 off
υ O1 = 0 − (0.2 )(2) = −0.4 V
υ O2 = 0
(c) For (i) and (ii)
( )( )
P = I Q 0 − V − = (0.2 )(1.8) = 0.36 mW
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17.2
− 1 − 0.7 − (− 2.5)
(a) i E = = 0.08 mA, ⇒ R E = 10 k Ω
RE
0 − (− 0.25)
RC = = 6.25 k Ω
0.04
(b) (i) υ1 = −1.3 V, Q1 off, Q 2 on
− 1 − 0.7 − (− 2.5)
iE = = 0.08 mA
10
υ O2 = 0 − (0.08)(6.25) = −0.50 V
υ O1 = 0
(ii) υ1 = −0.7 V, Q1 on, Q 2 off
− 0.7 − 0.7 − (− 2.5)
iE = = 0.11 mA
10
υ O1 = 0 − (0.11)(6.25) = −0.6875 V
υ O2 = 0
(c) (i) i E = 0.08 mA, P = (0.08)(2.5) = 0.2 mW
(ii) i E = 0.11 mA, P = (0.11)(2.5) = 0.275 mW
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17.3
3−0
iC 2 = I Q = 0.5 = ⇒ RC 2 = 6 K
RC 2
(a)
3 −1
iC1 = I Q = 0.5 = ⇒ RC1 = 4 K
RC1
(b)
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
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⎛V ⎞
I S exp ⎜ BE1 ⎟
iC1
= ⎝ VT ⎠
IQ ⎡ ⎛V ⎞ ⎛ V ⎞⎤
I S ⎢exp ⎜ BE1 ⎟ + exp ⎜ BE 2 ⎟ ⎥
⎣ V
⎝ T ⎠ ⎝ VT ⎠ ⎦
1
=
⎛ VBE 2 − VBE1 ⎞
1 + exp ⎜ ⎟
⎝ VT ⎠
(c) vI = VBE1 − VBE 2
So
iC1 1
=
IQ ⎛ −v ⎞
1 + exp ⎜ I ⎟
⎝ VT ⎠
0.1 1
= = 0.2
0.5 ⎛ −v ⎞
1 + exp ⎜ I ⎟
⎝ VT ⎠
⎛ −v ⎞ 1
exp ⎜ I ⎟ = −1 = 4
⎝ VT ⎠ 0.2
( −vI ) = ( 0.026 ) ln (4)
vI = −0.0360 V
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17.4
(a) vI = 0.5 V, Q1 on, Q2 off = v02 = 3 V
v01 = 3 − (1)(0.5) = 2.5 V
(b) vI = −0.5 V Q1 off, Q2 on ⇒ v01 = 3 V
v02 = 3 − (1)(0.5) = 2.5 V
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17.5
(a) Q2 on, vE = −1.2 − 0.7 = −1.9 V
−1.9 − ( −5.2 )
iE = iC 2 = = 1.32 mA
2.5
v2 = −1V = −iC 2 RC 2 = − (1.32 )( RC 2 )
RC 2 = 0.758 k Ω

(b) Q1 on, vE = −0.7 − 0.7 = −1.40 V

−1.4 − ( −5.2 )
iE = iC1 = = 1.52 mA
2.5
v1 = −1V = −iC1 RC1 = − (1.52 )( RC1 )
RC1 = 0.658 k Ω

(c) For vin = −0.7 V , Q1 on, Q2 off

⇒ vO1 = −0.70V
vO 2 = −1 − 0.7 ⇒ vO 2 = −1.7 V

For vin = −1.7 V , Q1 off , Q2 on

⇒ vO 2 = −0.7 V
vO1 = −1 − 0.7 ⇒ vO1 = −1.7 V
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
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(d) (i) For vin = −0.7V , iE = 1.52 mA

−1.7 − ( −5.2 )
iC 4 = = 1.17 mA
3
−0.7 − ( −5.2 )
iC 3 = = 1.5 mA
3
P = ( iE + iC 4 + iC 3 )( 5.2 ) = (1.52 + 1.17 + 1.5 )( 5.2 )
P = 21.8 mW
or
(ii) For vin = −1.7V , iE = 1.32 mA
−0.7 − ( −5.2 )
iC 4 = = 1.5 mA
3
−1.7 − ( −5.2 )
iC 3 = = 1.17 mA
3
P = (1.32 + 1.5 + 1.17 )( 5.2 )
P = 20.7 mW
or
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17.6
3.7 − 0.7
I3 = = 1.5 mA
a. 0.67 + 1.33
VR = I 3 R4 + Vγ = (1.5)(1.33) + 0.7
or
VR = 2.70 V
= 3.7 − 0.7 ⇒ 3.0 V
b. logic 1 level
For v X = vY = logic 1.
3 − 0.7
iE = = 2.875 mA = iRC1
0.8
vB 3 = 3.7 − ( 2.875 )( 0.21) = 3.10 V
⇒ v01 ( logic 0 ) = 2.4 V

For v X = vY = logic 0, QR on
2.7 − 0.7
iE = = 2.5 mA = iRC 2
0.8
vB 4 = 3.7 − ( 2.5 )( 0.24 ) = 3.1 V
⇒ v02 ( logic 0 ) = 2.4 V
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17.7
0.7 − 0.7 − (− 2.1)
(a) R1 = = 10.5 k Ω
0.20
0 − (− 2.1)
(b) R5 = R 6 = = 17.5 k Ω
0.12
(c) I Q = I REF = 0.20 mA
υ O1 = −0.7 V, υ C 2 = 0
0. 7 − 0
R C1 = = 3. 5 k Ω
0. 2
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
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(d) I Q = I REF = 0.20 mA

υ O 2 = −0.7 V, υ CR = 0
0.7 − 0
RC 2 = = 3.5 k Ω
0.20
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17.8
V R = −0.5 V
− 0.5 − 0.7 − (− 3)
iE = = 0.4 mA, R E = 4.5 k Ω
RE
− 0.5 − (− 3)
R5 = = 6.25 k Ω
0. 4
0. 7 − 0. 2
V B 2 = −0.5 + 0.7 = 0.2 V, R1 = = 1.25 k Ω
0. 4
0.2 − 0.7 − 0.7 − (− 3)
R2 = = 4. 5 k Ω
0.4
0 − (− 3)
R3 = R 4 = = 3.75 k Ω
0. 8
υ OR = −1 V, ⇒ υ CR = −0.3 V
0.7 − (− 0.3)
RC 2 = = 2. 5 k Ω
0.4
− 0.7 − (− 3)
υ I = 0 , iE = = 0.511 mA
4.5
υ C1 = −1 + 0.7 = −0.3 V
0.7 − (− 0.3)
RC1 = = 1.957 k Ω
0.511
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17.9
υ O = logic 1 = 1.8 V, logic 0 = 1.2 V
For υ I = logic 1 = 1.8 V
1.8 − 0.7
i E = 0.8 = ⇒ R E = 1.375 k Ω
RE
2.5 − 1.9
υ C1 = 1.2 + 0.7 = 1.9 V, ⇒ RC1 = = 0.75 k Ω
0.8
1.5 − 0.7 0.8
For υ I = logic 0, Q R on; i E = = = 0.5818 mA
RE 1.375
υ CR = 1.2 + 0.7 = 1.9 V
2. 5 − 1. 9
RC 2 = = 1.031 k Ω
0.5818
1 .8
R 2 = R3 = = 2.25 k Ω
0 .8
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Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
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17.10
Neglecting base currents:
I E1 = 0, I E 3 = 0
(a)
5 − 0.7
IE5 = ⇒ I E 5 = 1.72 mA
2.5
Y = 0.7 V
5 − 0.7
I E1 = ⇒ I E1 = 0.239 mA
18
IE3 =0
5 − 0.7
IE5 = ⇒ I E 5 = 1.72 mA
2.5
Y = 0.7 V
(b)
5 − 0.7
I E1 = I E 3 = ⇒ I E1 = I E 3 = 0.239 mA
(c) 18
I E 5 = 0, Y = 5 V
(d) Same as (c).
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17.11
(a) VR = −(1)(1) − 0.7 ⇒ VR = −1.7 V

(b) QR off , then vO1 = Logic 1 = −0.7 V

QR on, then vO1 = −(1)(2) − 0.7 ⇒
vO1 = Logic 0 = −2.7 V
QA / QB − off , then vO 2 = Logic 1 = −0.7 V
QA / QB − on, then vO 2 = −(1)(2) − 0.7 ⇒
vO 2 = Logic 0 = −2.7 V
A = B = Logic 0 = −2.7 V , QR on,
VE = −1.7 − 0.7 ⇒ VE = −2.4 V
(c)
A = B = Logic 1 = −0.7 V , QA / QB on,
VE = −0.7 − 0.7 ⇒ VE = −1.4 V

(d) A = B = Logic 1 = −0.7 V , QA / QB on,

−2.7 − (−5.2)
iC 3 = = 1.67 mA
1.5
−0.7 − (−5.2)
iC 2 = = 3 mA
1.5
P = (1.67 + 1 + 1 + 1 + 3)(5.2) ⇒ P = 39.9 mW
A = B = Logic 0 = −2.7 V
iC 3 = 3 mA, iC 2 = 1.67 mA
P = 39.9 mW
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Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
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17.12
a. AND logic function
logic 0 = 0 V
b.
5 − (1.6 + 0.7)
Q3 on, i = = 2.25 mA
1.2
V2 = (2.25)(0.8) ⇒ logic 1 = 1.8 V
5 − 0.7
iE1 = ⇒ iE1 = 1.65 mA
2.6
5 − (0.7 + 0.7)
iE 2 = ⇒ iE 2 = 3 mA
1.2
iC 3 = 0, iC 2 = iE 2 = 3 mA
V2 = 0
c.
5 − (1.8 + 0.7)
iE1 = ⇒ iE1 = 0.962 mA
2.6
5 − (1.6 + 0.7)
iE 2 = ⇒ iE 2 = 2.25 mA
1.2
iC 2 = 0, iC 3 = iE 2 = 2.25 mA
V = 1.8 V
d. 2

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17.13
3.5 + 3.1
(a) υ R = (logic 0 + logic 1)/2 − 0.7 = − 0.7 = 2.6 V
2
(b) For υ X = υ Y = logic 1 = 3.5 V
υ E1 = 3.5 − 0.7 − 0.7 = 2.1 V
2.1 − 0
i E1 = = 0.175 mA
12
1 0.4
i RC1 = ⋅ i E1 = 0.05833 mA = ⇒ RC1 = 6.86 k Ω
3 R C1
(c) For υ X = υ Y = logic 0 = 3.1 V
υ E1 = V R − 0.7 = 2.6 − 0.7 = 1.9 V
1.9
iE2 = = 0.1583 mA
12
1 0.4
i RC 2 = ⋅ i E 2 = 0.05277 mA = ⇒ RC 2 = 7.58 k Ω
3 RC 2
(d) For υ X = υ Y = logic 0 = 3.1 V
i E = 0.1583 mA
3.1 − 0.7
i R1 = = 0.3 mA
8
P = (0.1583 + 0.3)(3.5) = 1.60 mW
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Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
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17.14
Assume Vγ = 0.4 V
(a) Logic 1 = 0.2 V, Logic 0 = −0.2 V
0 − 0.7 − (− 3.10 )
(b) i E = = 0.25 ⇒ R E = 9.6 k Ω
RE
(c) i D1 + i R1 = i E
2i R1 + i R1 = 3i R1 = 0.25 ⇒ i R1 = 0.08333 mA
0. 4
R1 = = 4. 8 k Ω
0.08333
0.2 − 0.7 − (− 3.10 )
(d) i E = = 0.2708 mA
9. 6
0.4 0.4
i R2 = = = 0.0833 mA
R 2 4.8
i D 2 = i E − i R 2 = 0.2708 − 0.0833 = 0.1875 mA
(e) i E = 0.2708 mA
− 0.2 − (− 3.10 )
iR4 = = 0.8788 mA
3.3
0.2 − (− 3.10 )
i R3 = = 1.0 mA
3. 3
P = (i E + i R 3 + i R 4 )[0.9 − (− 3.10 )] = (0.2708 + 1.0 + 0.8788)(4 ) = 8.6 mW
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17.15
a.
( −0.9 − 0.7 ) − ( −3)
i1 = ⇒ i1 = 1.4 mA
1
( −0.2 − 0.7 ) − ( −3)
i3 = ⇒ i3 = 0.14 mA
15
( −0.2 − 0.7 ) − ( −3)
i4 = ⇒ i4 = 0.14 mA
15
i2 + iD = i1 + i3 = 1.4 + 0.14 = 1.54 mA
0.4
i2 = ⇒ i2 = 0.8 mA
0.5
iD = 0.74 mA
v0 = −0.4 V
i1 = 1.4 mA
b.
(0 − 0.7) − (−3)
i3 = ⇒ i3 = 0.153 mA
15
i4 = i3 ⇒ i4 = 0.153 mA
i2 + iD = i4 ⇒ i2 = 0.153 mA
iD = 0
v0 = −(0.153)(0.5) ⇒ v0 = −0.0765 V
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
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( 0 − 0.7 − 0.7 ) − ( −3)

i1 = ⇒ i1 = 1.6 mA
c. 1
( −0.2 − 0.7) − (−3)
i3 = ⇒ i3 = 0.14 mA
15
i4 = i3 ⇒ i4 = 0.14 mA
i2 + iD = i3 ⇒ i2 = 0.14 mA
iD = 0.0
v0 = −(0.14)(0.5) ⇒ v0 = −0.07 V
(0 − 0.7 − 0.7) − (−3)
i1 = ⇒ i1 = 1.6 mA
d. 1
(0 − 0.7) − ( −3)
i3 = ⇒ i3 = 0.153 mA
15
i4 = i3 ⇒ i4 = 0.153 mA
i2 + iD = i1 + i4 = 1.6 + 0.153 = 1.753 mA
0.4
i2 = ⇒ i2 = 0.8 mA
0.5
iD = 0.953 mA
v0 = −0.40 V
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17.16
(a) (i) A = B = C = D = 0 V, Q1 , Q2 , Q3 , Q 4 off; Q5 , Q6 on
1 ⎛ i R1 ⎞
2.5 = i R1 (2 ) + 0.7 + ⎜ ⎟(15)
2 ⎜⎝ 91 ⎟⎠
1.8 = i R1 (2 + 0.0824) ⇒ i R1 = 0.8644 mA
Y = 2.5 − i R1 (2 ) ⇒ Y = 0.771 V
(ii) A = B = 0 V, C = D = 2.5 V; Q1 , Q 2 , Q6 off; Q3 , Q 4 , Q5 on
⎛i ⎞
2.5 = i R1 (2 ) + 0.7 + ⎜⎜ R1 ⎟⎟(15)
⎝ 91 ⎠
1.8 = i R1 (2 + 0.1648) ⇒ i R1 = 0.8315 mA
Y = 2.5 − i R1 (2) ⇒ Y = 0.837 V
(iii) A = C = 2.5 V, B = D = 0 V; Q1 , Q3 on, Q5 , Q6 off
i R1 = 0 ⇒ Y = 2.5 V
(b) Y=(A OR B) AND (C OR D)
(c) (i) P = i R1 (2.5) = (0.8644 )(2.5) = 2.16 mW
2.5 − 0.7
(ii) i R 3 = = 0.12 mA
15
P = (i R1 + i R 3 )(2.5) = (0.8315 + 0.12 )(2.5) = 2.38 mW
2.5 − 0.7
(iii) i R 2 = i R 3 = = 0.12 mA
15
P = (i R 2 + i R 3 )(2.5) = (0.24 )(2.5) = 0.60 mW
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Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

17.17
a. logic 1 = 0 V
logic 0 = −0.4 V
v01 = A OR B
b.
v02 = C OR D
v03 = v01 OR v02
or
v03 = ( A OR B ) AND (C OR D)
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17.18
a. For CLOCK = high, I DC flows through the left side of the circuit.. If D is high, I DC flows through
the left R resistor pulling Q low. If D is low. I DC flows through the right R resistor pulling Q low.
For CLOCK = low, I DC flows through the right side of the circuit maintaining Q and Q in their previous
state.
P = ( I DC + 0.5I DC + 0.1I DC + 0.1 I DC )( 3)
b.
P = 1.7 I DC ( 3) = (1.7 )( 50 )( 3) ⇒ P = 255 μ W
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17.19
(a) (i) For υ I = 0.1 V
υ1 = 0.8 V
2.5 − 0.8
i1 = = 0.1417 mA
12
i 2 = i 3 = 0 , υ O = 2 .5 V
(ii) For υ I = 2.5 V
υ1 = 0.7 + 0.8 = 1.5 V
2.5 − 1.5
i1 = i 2 = = 0.0833 mA
12
υ O = 0.1 V
2.5 − 0.1
i3 = = 0.20 mA
12
(b) (i) υ1 = 0.7 + 0.7 = 1.4 V
υ I = υ1 − 0.7 = 0.7 V
(ii) υ1 = 0.7 + 0.8 = 1.5 V
υ I = υ1 − 0.7 = 0.8 V
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Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
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17.20
(a)
vI = 0 ⇒ V1 = 0.7 V
3.3 − 0.7
i1 = = 0.433 mA
6
iB = iC = 0
vo = 3.3 V
(b)
vI = 3.3 V v1 = 0.7 + 0.8 = 1.5 V
3.3 − 1.5
i1 = = 0.3 mA
6
0.8
iR = = 0.04 mA
20
iB = 0.3 − 0.04 = 0.26 mA
3.3 − 0.1
iC = = 0.8 mA
4
vo = 0.1 V
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17.21
vX = vY = 0.1 V ⇒ v′ = 0.8 V
i. For
5 − 0.8
i1 = ⇒ i1 = 0.525 mA
8
i3 = i4 = 0

ii. For v X = vY = 5 V,
v ′ = 0.8 + 0.7 + 0.7 ⇒⇒ v′ = 2.2 V
5 − 2.2
i1 = ⇒ i1 = 0.35 mA
8
0.8
i4 = i1 − ⇒ i4 = 0.297 mA
15
5 − 0.1
i3 = ⇒ i3 = 2.04 mA
2.4
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17.22
(i) υ X = υ Y = 0.1 V
υ ′ = 0 .8 V
3.3 − 0.8
i1 = = 0.3125 mA
8
i3 = i 4 = 0
(ii) υ X = υ Y = 3.3 V
υ ′ = 0 . 8 + 0 .7 + 0 . 7 = 2 . 2 V
3. 3 − 2. 2
i1 = = 0.1375 mA
8
0. 8
i 4 = 0.1375 − = 0.08417 mA
15
3.3 − 0.1
i3 = = 1.333 mA
2. 4
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
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17.23
a. For v X = vY = 5 V , both Q1 and Q2 driven into saturation.
v1 = 0.8 + 0.7 + 0.8 ⇒ v1 = 2.3 V
5 − 2.3
i1 = ⇒ i1 = iB1 = 0.675 mA
4
5 − (0.8 + 0.7 + 0.1)
i2 = ⇒ i2 = 1.7 mA
2
i4 = iB1 + i2 ⇒ i4 = 2.375 mA
0.8
i5 = ⇒ i5 = 0.08 mA
10
iB 2 = i4 − i5 ⇒ iB 2 = 2.295 mA
5 − 0.1
i3 = ⇒ i3 = 1.225 mA
4
v0 = 0.1V
5 − (0.1 + 0.7)
iL′ = = 1.05 mA
4
iC (max) = β iB 2 = NiL′ + i3
b.
(20)(2.295) = N (1.05) + 1.225
So
N = 42
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17.24
(a) υ1 = 0.8 + 0.7 + 0.8 = 2.3 V
3.3 − 2.3
i1 = = 0.25 mA = i B1
4
υ C1 = 0.8 + 0.7 + 0.1 = 1.6 V
3.3 − 1.6
i2 = = 0.85 mA
2
i 4 = i B1 + i 2 = 0.25 + 0.85 = 1.10 mA
0. 8
i5 = = 0.08 mA
10
iB2 = i 4 − i 5 = 1.10 − 0.08 = 1.02 mA
3.3 − 0.1
i3 = = 0.80 mA
4
(b) iCo (max ) = β i B 2 = i 3 + N i L′
3.3 − (0.1 + 0.7 )
i L′ = = 0.625 mA
4
(20)(1.02) = 0.8 + N (0.625) ⇒ N = 31.36 ⇒ N = 31
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Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
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17.25
DX and DY off, Q1 forward active mode
v1 = 0.8 + 0.7 + 0.7 = 2.2 V
5 = i1 R1 + i2 R2 + v1 and i1 = (1 + β )i2
5 − 2.2 = i (1 + β ) R1 + R2 ]
2[
So
Assume β = 25
5 − 2.2
i2 = ⇒ i2 = 0.0589 mA
(26)(1.75) + 2
i1 = (1 + β )i2 = (26)(0.05895) ⇒ i1 = 1.53 mA
i3 = β i2 ⇒ i3 = 1.47 mA
0.8
iBo = i2 + i3 − = 0.0589 + 1.47 − 0.16 ⇒
5
iBo = 1.37 mA
Qo in saturation
5 − 0.1
iCo = ⇒ iCo = 0.817 mA
6
______________________________________________________________________________________

17.26
(a) vI = 0 V, Q1 forward active
5 − 0.7
iB = = 0.717 mA
6
iC = (25)(0.71667) = 17.9 mA
iE = (26)(0.71667) = 18.6 mA

(b) VI = 0.8 V
5 − (0.8 + 0.7)
iB = = 0.583 mA
6
Because of the relative doping levels of the Emitter and collector, and because of the difference in B-C
and B-E areas, we have −iC ≈ iB = 0.583 mA and iE = small value.
(c) vI = 3.6 Q1 inverse active.
5 − (0.8 + 0.7)
iB = = 0.583 mA
6
iE = − β R iE = −(0.5)(0.583) = −0.292 mA
iC = −iB − iE = −0.583 − 0.292 ⇒ iC = −0.875 mA
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Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
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17.27
(a) (i) For υ I = 0.1 V, υ1 = 0.1 + 0.8 = 0.9 V, and υ O = 2.5 V
2.5 − 0.9
i1 = = 0.1333 mA
12
i 2 = i3 = 0
(ii) For υ I = 2.5 V, υ1 = 0.8 + 0.7 = 1.5 V, and υ O = 0.1 V
2.5 − 1.5
i1 = = 0.0833 mA
12
i 2 = i1 (1 + 0.1) = (0.0833)(1.1) = 0.09167 mA
2.5 − 0.1
i3 = = 0.20 mA
12
(b) (i) υ1 = 0.7 + 0.7 = 1.4 V
υ I = 1.4 − 0.8 = 0.6 V
(ii) υ1 = 0.8 + 0.7 = 1.5 V
υ I = 1.5 − 0.8 = 0.7 V
______________________________________________________________________________________

17.28
a. i. v X = vY = 0.1 V, so Q1 in saturation.
5 − (0.1 + 0.8)
i1 = ⇒ i1 = 0.683 mA
6
⇒ iB 2 = i2 = i4 = iB 3 = i3 = 0

ii. v X = vY = 5 V, so Q1 in inverse active mode.

Assume Q2 and Q3 in saturation.

5 − (0.8 + 0.8 + 0.7)
i1 = ⇒ i1 = iB 2 = 0.45 mA
6
5 − (0.8 + 0.1)
i2 = ⇒ i2 = 2.05 mA
2
0.8
i4 = ⇒ i4 = 0.533 mA
1.5

iB 3 = ( iB 2 + i2 ) − i4 = 0.45 + 2.05 − 0.533

or
iB 3 = 1.97 mA
5 − 0.1
i3 = ⇒ i3 = 2.23 mA
2.2
b. For Q3 :
i3 2.23
= = 1.13 < β
iB 3 1.97
For Q2 :
i2 2.05
= = 4.56 < β
iB 2 0.45

Since ( C B )
I /I < β
, then each transistor is in saturation.
______________________________________________________________________________________
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

17.29
(a) (i) υ X = 0.1 V, υ Y = 3.3 V
υ ′ = 0 . 1 + 0 .7 = 0 . 8 V
3.3 − 0.8
ii = = 0.156 mA
16
i3 = i 4 = 0
(ii) υ X = υ Y = 3.3 V
υ ′ = 0 . 8 + 0 .7 + 0 . 7 = 2 . 2 V
3. 3 − 2. 2
i1 = = 0.06875 mA
16
0. 8
i 4 = 0.06875 − = 0.02875 mA
20
3.3 − 0.1
i3 = = 0.5333 mA
6
(b) i C1 (max ) = β i 4 = i 3 + N i L′
3.3 − (0.1 + 0.7 )
i L′ = = 0.15625 mA
16
(50)(0.02875) = 0.5333 + N (0.15625) ⇒ N = 5.8 ⇒ N = 5
(c) iC1 (max ) = β i 4 = (50)(0.02875) = 1.44 mA < 5 mA, ⇒ N = 5
______________________________________________________________________________________

17.30
a. For v X = vY = 5 V, Q, in inverse active mode.
5 − ( 0.8 + 0.8 + 0.7 )
iB1 = = 0.45 mA
6
iB 2 = iB1 + 2 β R iB1 = 0.45(1 + 2 [ 0.1]) = 0.54 mA
5 − ( 0.8 + 0.1)
iC 2 = = 2.05 mA
2
0.8
iB 3 = ( iB 2 + iC 2 ) − = 0.54 + 2.05 − 0.533
1.5
or
iB3 = 2.06 mA
Now
5 − (0.1 + 0.8)
iL′ = = 0.683 mA
6
Then
iC 3 (max) = β F iB 3 = NiL′
or (20)(2.06) = N (0.683)
⇒ N = 60
′
b. From above, for v0 high, I L = (0.1)(0.45) = 0.045 mA. Now
⎛ 5 − 4.9 ⎞ (21)(0.1)
I L′ (max) = (1 + β F ) ⎜ ⎟ =
⎝ R2 ⎠ 2
= 1.05 mA
So
I L (max) = NI L′
or 1.05 = N (0.045)
⇒ N = 23
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
______________________________________________________________________________________

17.31
(a) (i) Vin = 0.1 V
5 − (0.1 + 0.8)
i RB = = 1.025 mA
4
i RCP = i Bo = 0 , Vout = 5 V
(ii) Vin = 5 V
5 − (0.7 + 0.8 + 0.7 )
i RB = = 0.70 mA
4
V out = 0.7 + 0.1 = 0.8 V
5 − 0.8
i RCP = = 4.2 mA
1
i BS = (1.1)(0.7 ) = 0.77 mA
i Co = β i Bo , iCS = 4.2 − β i Bo , i ES = 0.77 + (4.2 − β i Bo )
0.7
i Bo = i ES −
1
i Bo = 0.77 + 4.2 − β i Bo − 0.7
4.27
(1 + β )i Bo = 4.27 ⇒ i Bo = = 0.0837 mA
51
(b) (i) Vin = 0.1 V, V out = High,
i L′ = 5β R i RB = 5(0.1)(0.7 ) = 0.35 mA
V out = 5 − (0.35)(1) = 4.65 V
P = (5 − 0.1)(1.025) + (0.35)(5 − 4.65) = 5.145 mW
(ii) i L = 5(1.025) = 5.125 mA
P = (0.77 + 4.2 )(5) + (5.125)(0.1) = 25.4 mW
______________________________________________________________________________________

17.32
a. v X = vY = vZ = 0.1 V
5 − (0.1 + 0.8)
iB1 = ⇒ iB1 = 1.05 mA
3.9
Then
iC1 = iB 2 = iC 2 = iB 3 = iC 3 = 0

b. v X = vY = vZ = 5 V
5 − (0.8 + 0.8 + 0.7)
iB1 = ⇒ iB1 = 0.692 mA
3.9
Then
iC1 = iB 2 = iB1 (1 + 3β R ) = (0.692)(1 + 3[0.5])
⇒ iC1 = iB 2 = 1.73 mA
5 − (0.1 + 0.8)
iC 2 = ⇒ iC 2 = 2.05 mA
2
0.8
iB 3 = iB 2 + iC 2 − = 1.73 + 2.05 − 1.0
0.8
⇒ iB 3 = 2.78 mA
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

5 − 0.1
iR 3 = = 2.04 mA
2.4
5 − (0.1 + 0.8)
iL′ = = 1.05 mA
3.9
iC 3 = iR 3 + 5iL′ = 2.04 + (5)(1.05)
⇒ iC 3 = 7.29 mA
______________________________________________________________________________________

17.33
5
(a) (i) I L′ = 5 μ A, i B 4 = = 0.098 μ A
51
V B5 = 5 − (0.000098)(2) ≅ 5 V
υ O = 3 .6 V
5
(ii) I L′ = 5 mA, i B 4 = = 0.098 mA
51
V B5 = 5 − (0.098)(2) = 4.804 V
υ O = 4.804 − 1.4 = 3.404 V
(iii) Q 4 in saturation
5 − V B 5 − (V E + 0.8)
IB = =
2 2
5 − VC 5 − (V E + 0.1)
IC = =
0.13 0.13
5 − (V E + 0.7 ) 5 − (V E + 0.1)
I B + I C = I E = I L = 25 = +
2 0.13
25 = 2.10 − V E (0.5) + 37.69 − V E (7.692) ⇒ V E = 1.81 V
υ O = 1.81 − 0.7 = 1.11 V
(b) V B 4 = 0.7 + 0.8 = 1.5 V
5 − 1.5
I B4 = = 1.75 mA
2
5 − 0.8
VC 4 = 0.7 + 0.1 = 0.8 V, I C 4 = = 32.31 mA
0.13
I L = 1.75 + 32.31 = 34.06 mA
______________________________________________________________________________________
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

17.34
a. v X = vY = vZ = 2.8 V, Q1 biased in the inverse active mode.
2.8 − (0.8 + 0.8 + 0.7)
iB1 = ⇒ iB1 = 0.25 mA
2
iB 2 = iB1 (1 + 3β R ) = 0.25(1 + 3 [0.3])
⇒ iB 2 = 0.475 mA
vC 2 = 0.8 + 0.1 = 0.9 V
0.9 − (0.7 + 0.1) 0.1
iB 4 = =
(1 + β F )(0.5) (101)(0.5)
= 0.00198 mA (Negligible)
5 − 0.9
iR 2 = = 4.56 mA
0.9
⇒ iC 2 = 4.56 mA
0.8
iB 3 = iB 2 + iC 2 − = 0.475 + 4.56 − 0.8
1
⇒ iB 3 = 4.235 mA

b. v X = vY = vZ = 0.1 V
5 − (0.1 + 0.8)
iB1 = ⇒ iB1 = 2.05 mA
2
From part (a),
iL′ = β R ⋅ iB1 = (0.3)(0.25) = 0.075 mA
Then
5iL′ 5(0.075)
iB 4 = = ⇒ iB 4 = 0.00371 mA
1+ βF 101
______________________________________________________________________________________

17.35
a. v X = vY = vZ = 0.1 V
2 − (0.1 + 0.8)
iB1 = + iB 3
RB1
where
(2 − 0.7) − (0.9) 0.4
iB 3 = =
RB 2 1
⇒ iB 3 = 0.4 mA
Then
1.1
iB1 = + 0.4 ⇒ iB1 = 1.5 mA
1
iB 2 = 0 = iC 2
Q3 in saturation iC 3 = 5iL′ For v0 high,
vB′ 1 = 0.8 + 0.7 = 1.5 V ⇒ Q3′ off
2 − 1.5
iB′ 1 = = 0.5 mA
1
iL′ = β R iB′ 1 = (0.2)(0.5) = 0.1 mA
Then
iC 3 = 0.5 mA
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

b. v X = vY = vZ = 2 V
From part (a),
⇒ iB1 = 0.5 mA
iB 3 = 0 = iC 3
iB 2 = iB1 (1 + 3β R ) = (0.5)(1 + 3 [0.2])
iB 2 = 0.8 mA
iC 2 = 5iL′ , ′
and from part (a), iL = 1.5 mA
So
iC 2 = 7.5 mA
______________________________________________________________________________________

17.36
5.8 − 0.7
IB + ID = = 0.51 mA
(a) 10
5 − (0.7 − 0.3)
IC − I D = = 4.6 mA
1
Now
IC IC
I D = 0.51 − I B = 0.51 − = 0.51 −
β 50
Then
⎛ I ⎞ ⎛ 1 ⎞
I C − I D = I C − ⎜ 0.51 − C ⎟ = I C ⎜1 + ⎟ − 0.51 = 4.6
⎝ 50 ⎠ ⎝ 50 ⎠
I C = 5.01 mA
So
IC 5.01
IB = = ⇒ I B = 0.1002 mA
β 50
I D = 0.51 − 0.1002 ⇒ I D = 0.4098 mA
VCE = 0.4 V

I D = 0,VCE = VCE ( sat ) = 0.1 V

(b)
5.8 − 0.8
IB = ⇒ I B = 0.5 mA
10
5 − 0.1
IC = ⇒ I C = 4.9 mA
1
______________________________________________________________________________________

17.37
(a) (i) υ I = 0 , υ1 = 0.3 V
1 .5 − 0 .3
i1 = = 1.2 mA
1
i B = i C = 0 , υ O = 1.5 V
(ii) υ I = 1.5 V, υ1 = 0.7 + 0.3 = 1.0 V
1.5 − 1.0
i1 = = 0.5 mA
1
0. 7
i B = 0.5 − = 0.465 mA
20
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

1.5 − 0.4
iC = = 0.9167 mA, υ O = 0.4 V
1.2
(b) (i) υ1 = 0.7 + 0.3 = 1.0 V, υ I = 0.7 V
i B = iC = 0
(ii) υ1 = 1.0 V, υ I = 0.7 V
1.5 − 0.4
iC = = 0.9167 mA
1.2
i 0.9167
iB = C = = 0.03667 mA
β 25
(c) iCo (max ) = β i B = iC + N i L′
1.5 − (0.4 + 0.3) 0.4
i L′ = − = 0.78 mA
1 20
(25)(0.465) = (0.9167) + N (0.78) ⇒ N = 13.7 ⇒ N = 13
______________________________________________________________________________________

17.38
a. v X = vY = 0.4 V
vB1 = 0.4 + 0.7 ⇒ vB1 = 1.1 V
5 − 1.1
iB1 = ⇒ iB1 = 1.39 mA
2.8
vB 2 = 0.4 + 0.4 ⇒ vB 2 = 0.8 V
iB 2 = iC 2 = iB 0 = iC 0 = iB 5 = iC 5
= iB 3 = iC 3 = 0 ( No load )
5 = iB 4 R2 + VBE + (1 + β )iB 4 R4
5 − 0.7
iB 4 = ⇒ iB 4 = 0.0394 mA
0.76 + (31)(3.5)
iC 4 = β F iB 4 ⇒ iC 4 = 1.18 mA
vB 4 = 5 − (0.0394)(0.76) ⇒ vB 4 = 4.97 V

b. v X = vY = 3.6 V
vB1 = 0.7 + 0.7 + 0.3 ⇒ vB1 = 1.7 V
vB 2 = 1.4 V
vB 0 = 0.7 V
vC 2 = 1.1 V
5 − 1.7
iB1 = ⇒ iB1 = 1.1786 mA
2.8
iB 2 = iB1 (1 + 2 β R ) = 1.18(1 + 2 [0.1])
iB 2 = 1.41 mA
1.1 − 0.7
iB 4 = ⇒ iB 4 = 0.00369 mA
(31)(3.5)
5 − 1.1
iR 2 = = 5.13 mA ⇒ iC 2 ≈ 5.13 mA
0.76
iB 0 ≈ iB 2 + iC 2
iB 0 = 6.54 mA
______________________________________________________________________________________
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

17.39
2.5 − (0.4 + 0.3) 1
(a) For the load, i RB1 = = (0.2 ) ⇒ R B1 = 18 k Ω
R B1 2
For υ X = υ Y = υ Z = logic 1
2.5 − (0.7 + 0.8)
i RB1 = = 0.05556 mA
18
2.5 − (0.7 + 0.1)
i RC1 =
R C1
1.7 0.7
i B 2 = 0.1 = 0.05556 + − ⇒ RC1 = 1.63 k Ω
RC1 0.7
(b) υ X = 0.4 V, υ B1 = 0.7 V, υ B 2 = 0
υ O ≅ 2.5 − 0.7 = 1.8 V
All i B = 0 , All iC = 0
(c) υ B1 = 1.5 V, υ B 2 = 0.7 V
2.5 − 1.5
i B1 = = 0.0556 mA
18
2.5 − (0.7 + 0.1)
i C1 = = 1.043 mA
1.63
iB2 = 0.10 mA
4[2.5 − (0.4 + 0.3)]
iC 2 = = 0.40 mA
18
υ O = 0 .4 V
(d) iC 2 (max ) = β i B 2 = N i L′
i L′ = 0.1 mA
(20)(0.1) = N (0.1) ⇒ N = 20
______________________________________________________________________________________

17.40
a. For v X = vY = 3.6 V
5 − 2.1
vB1 = 3(0.7) = 2.1 ⇒ iB1 = = 0.29 mA
10
5 − 1.8
vC1 = 0.7 + 0.7 + 0.4 = 1.8 V ⇒ iC1 = = 0.32 mA
10
1.4
iB 2 = iB1 + iC1 − = 0.29 + 0.32 − 0.0933
15
So
iB 2 = 0.517 mA
vC 2 = 0.7 + 0.4 = 1.1 V
5 − 1.1
iC 2 = = 0.951 mA
4.1

0.7
iB 5 = iB 2 + iC 2 − = 0.517 + 0.951 − 0.175
4
or iB 5 = 1.293 mA
′
For v0 = 0.4 V, vB1 = 0.4 + 0.7 = 1.1 V
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

Then
1.1 − 0.7
iB′ 1 = = 0.00086 mA
(31)(15)
5 − 1.1
iL′ = − 0.00086 or iL′ ≈ 0.39 mA
10
So iC 5 (max) = β iΒ 5 = NiL′
(30)(1.293) = N (0.39) ⇒ N = 99

b. P = (0.29 + 0.32 + 0.951)(5) + (99)(0.39)(0.4)

P = 7.805 + 15.444 or P = 23.2 mW
(Assumming 99 load circuits which is unreasonably large.)
______________________________________________________________________________________

17.41
a. Assume no load. For v X = logic 0 = 0.4 V
5 − (0.4 + 0.7)
iE1 = = 0.0975 mA
40
Essentially all of this current goes to ground from VCC .
P = iE1 ⋅ VCC = (0.0975)(5) ⇒ P = 0.4875 mW

5 − (3)(0.7)
iR1 = = 0.0725 mA
b. 40
5 − (0.7 + 0.7 + 0.4)
iR 2 = = 0.064 mA
50
5 − (0.7 + 0.4)
iR 3 = = 0.26 mA
15
P = (0.0725 + 0.064 + 0.26)(5)
P = 1.98 mW

c. For v0 = 0, vC 7 = 0.7 + 0.4 = 1.1 V

5 − 1.1
iR 7 = ⇒ iR 7 = 78 mA ≈ iSC
0.050
______________________________________________________________________________________

17.42
3 − (0.7 + 0.3)
(a) i E = = 1.0 mA
2
2.4 − 0.7
(b) i E = = 0.85 mA
2
3 − 2. 4
RC = = 0.706 k Ω
0.85
(c) (i) P = (1.0 )(3) = 3.0 mW
(ii) P = (0.85)(3) = 2.55 mW
______________________________________________________________________________________
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

17.43
(a) v I = v O = 2.5 V; A transient situation
vDS ( M N ) = 2.5 − 0.7 = 1.8 V
vGS ( M N ) = 2.5 − 0.7 = 1.8 V ⇒ M N in saturation
vSD ( M P ) = 5 − (2.5 + 0.7) = 1.8 V
vSG ( M P )5 − 2.5 = 2.5 V ⇒ M P in saturation
iDN = K n (vGSN − VTN )2 = (0.1)(1.8 − 0.8) 2 ⇒ iDN = 0.1 mA
iDP = K P (vSGP + VTP )2 = (0.1)(2.5 − 0.8) 2 ⇒ iDP = 0.289 mA
iC1 = β iDP = (50)(0.289) ⇒ iC1 = 14.45 mA
iC 2 = β iDN = (50)(0.1) ⇒ iC 2 = 5 mA

Difference between iE1 and iDN + iC 2 is a load current.

(b) Assume iC1 = 14.45 mA is a constant
1 i ⋅t (V )(C )
VC =
C ∫ iC1dt = C1 ⇒ t = C
C iC1
(5)(15 × 10−12 )
t= ⇒ t = 5.19 ns
14.45 × 10−3
(5)(15 × 10−12 )
t= ⇒ t = 260 ns
(c) 0.289 × 10−3
______________________________________________________________________________________

17.44
Microelectronics: Circuit Analysis and Design, 4th edition Chapter 17
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(a) Assume R1 = R2 = 10 kΩ; β = 50

0.7
iR1 = iR 2 = = 0.07 mA
Then 10

NMOS in saturation region; vGSN = 2.5 − 0.7 = 1.8 V

iDN = K n ( vGSN − VTN ) = ( 0.1)(1.8 − 0.8 )
2 2

iDN = 0.10 mA
Then iB 2 = 0.03 ⇒ iC 2 = (50)(0.03) = 1.5 mA
iE1 = 1.53 mA ⇒ iB1 = 0.03 mA ⇒ iC1 = 1.5 mA
So DP = 0.10 mA
i

Now, M P biased in non-saturation region

vSGP = 2.5 V
iDP = 0.10 = 0.10 ⎡⎣ 2(2.5 − 0.8)vSD − vSD
2
⎤⎦
2
0.10 vSD − 0.34 vSD + 0.10 = 0
0.34 ± (0.34) 2 − 4(0.10)(0.10)
vSD =
2(0.10)
Or
vSD = 0.325 V
Then vo = 5 − 0.325 − 0.7
vo = 3.975 V
1 i ⋅t
C∫
v= idt =
(b) C
Cv (15 × 10−12 )(5)
t= =
i 1.53 × 10−3
t = 49 ns
(c)
Cv (15 × 10−12 )(5)
t= =
i 0.1× 10−3
t = 0.75 μ s
______________________________________________________________________________________