Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 1

Problem Solutions 2 atoms per cell, so atom vol

 4 r 3 
  2  

1.1  3 
(a) fcc: 8 corner atoms  1 / 8  1 atom
6 face atoms  1 / 2  3 atoms
Total of 4 atoms per unit cell
(b) bcc: 8 corner atoms  1 / 8  1 atom Then
1 enclosed atom =1 atom  
 2  4 r
3

Total of 2 atoms per unit cell 

3 
(c) Diamond: 8 corner atoms  1 / 8  1  
Ratio  3
 100%  68%
atom  4r 
6 face atoms  1 / 2  3 atoms  
 3
 
4 enclosed atoms = 4 atoms
Total of 8 atoms per unit cell (d) Diamond lattice
_______________________________________ Body diagonal
8
 d  8r  a 3  a  r
1.2 3
(a) Simple cubic lattice: a  2r  8r 
3

Unit cell vol  a 3   2r   8r 3

3 Unit cell vol  a 3   

 3
 4 r 3  8 atoms per cell, so atom vol
1 atom per cell, so atom vol  1  

 3   4 r 3 
  8  

Then  3 
 4 r 3  Then
 
Ratio  3   
 8  4 r 
3

  100%  52.4%
8r 3  3 
Ratio  3
 100%  34%
(b) Face-centered cubic lattice  8r 
d  
d  4r  a 2  a   2 2 r  3
 
2
_______________________________________
Unit cell vol

 a3  2 2 r  3
 16 2  r 3 1.3
4 atoms per cell, so atom vol o
(a) a  5.43 A ; From Problem 1.2d,
 4 r 3 
  4   

 3  8
Then a r
3
 
 4  4 r 
3

Then r 
a 3

 5.43 3  1.176 Ao
Ratio  3  8 8
  100%  74%
16 2  r 3 Center of one silicon atom to center of
o
(c) Body-centered cubic lattice nearest neighbor  2r  2.35 A
4
d  4r  a 3  a  r (b) Number density
3 8
  5  10 22 cm 3
 
3
 4  8 3
Unit cell vol  a 3    r  5.43  10
 3  (c) Mass density
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1
By D. A. Neamen Problem Solutions
______________________________________________________________________________________


N  At.Wt.

 
5  10 22  28.09 1.7
o
NA 6.02  10 23 (a) Simple cubic: a  2r  3.9 A
   2.33 grams/cm 3 4r o
(b) fcc: a   5.515 A
_______________________________________ 2
4r o
(c) bcc: a   4.503 A
3
2 4r  o
(d) diamond: a   9.007 A
3
1.4 _______________________________________
(a) 4 Ga atoms per unit cell
4 1.8
Number density  (a) 21.035 2  21.035  2rB
5.65  10  8 3
o
 Density of Ga atoms  2.22  10 22 rB  0.4287 A
cm 3

4 As atoms per unit cell o

(b) a  21.035  2.07 A
 Density of As atoms  2.22  10 22
1
cm 3 (c) A-atoms: # of atoms  8  1
(b) 8 Ge atoms per unit cell 8
8 1
Number density  Density 

5.65  10 8
3
  2.07 10  8 3

 Density of Ge atoms  4.44  10 22  1.13  10 23 cm 3

cm 3 1
B-atoms: # of atoms  6   3
_______________________________________ 2
3
Density 
1.5
From Figure 1.15

2.07  10 8
3

 a  3   3.38  10 cm 3 23

(a) d      0.4330  a _______________________________________

 2  2 
 o
1.9
o
 0.4330 5.65  d  2.447 A (a) a  2r  4.5 A
a 1
(b) d    2   0.7071 a # of atoms  8  1
2 8
1
Number density 
  0.7071 5.65  d  3.995 A
o
 4.5  10  8 3

_______________________________________  1.097  10 22 cm
3

1.6 N  At.Wt.
a Mass density   
2 NA
  2 
sin    2    54.74
2 a 3
2
3 2

1.0974 10 12.5 22

   109.5 6.02  10 23
_______________________________________  0.228 gm/cm 3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
4r o o
(b) a   5.196 A Then a  4.62 A
3 Density of A:
1 1
# of atoms 8   1  2   1.01 10 22 cm
8
2

4.62  10 8 3

Number density  3

5.196  10 8
3
 Density of B:
 1.4257  10 22
cm 1
  1.01 10 22 cm
3

4.62  10 8 3

Mass density 3


1.4257 10 12.5 22
(b) Same as (a)
6.02  10 23 (c) Same material
 0.296 gm/cm 3 _______________________________________
_______________________________________ 1.13
1.10 2 2.2   21.8 o
a  4.619 A
From Problem 1.2, percent volume of fcc 3
atoms is 74%; Therefore after coffee is (a) For 1.12(a), A-atoms
ground, Surface density
Volume = 0.74 cm 3 1 1
 2 
_______________________________________ a 
4.619  10 8
2

2
 4.687  10 14 cm
1.11 o
o
For 1.12(b), B-atoms: a  4.619 A
(b) a  1.8  1.0  2.8 A
1
1 / 2  Surface density   4.687  10 14
(c) Na: Density  a2
 2.8 10  8 3
cm 2

 2.28  10 22 cm For 1.12(a) and (b), Same material

3

Cl: Density  2.28  10 22 cm 3

(d) Na: At. Wt. = 22.99

Cl: At. Wt. = 35.45
So, mass per unit cell o
(b) For 1.12(a), A-atoms; a  4.619 A

1 1 Surface density

  22.99    35.45 1
2 2  2  3.315  10 14
  4.85  10  23 a 2
6.02  10 23
cm 2
Then mass density
B-atoms;
4.85  10 23
  2.21 grams/cm Surface density
 2.8 10  8 3
 2
1
 3.315  10 14 cm
3 a 2
_______________________________________ 2

o
1.12 For 1.12(b), A-atoms; a  4.619 A
o
(a) a 3  2 2.2   21.8  8 A Surface density
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
1 _______________________________________
 2  3.315  10 14
a 2
1.17
cm  2
1 1 1
B-atoms; Intercepts: 2, 4, 3   , ,  
Surface density  2 4 3
1 (634) plane
 2  3.315  10 14 cm _______________________________________
a 2
2
1.18
For 1.12(a) and (b), Same material o
(a) d  a  5.28 A
_______________________________________
a 2 o

1.14 (b) d   3.734 A

2
1
(a) Vol. Density  3 a 3 o

ao (c) d   3.048 A
3
1 _______________________________________
Surface Density  2
ao 2
1.19
(b) Same as (a) 1 (a) Simple cubic
_______________________________________ (i) (100) plane:
Surface density
1.15
1 1
(i) (110) plane  2 
(see Figure 1.10(b)) a 
4.73  10 8
2

2
 4.47  10 14 cm
(ii) (111) plane
(ii) (110) plane:
(see Figure 1.10(c))
1
Surface density 
(iii) (220) plane 
2
a 2
2
1 1   3.16  10 14 cm
 , ,    1, 1, 0 
2 2  (iii) (111) plane:
Same as (110) plane and [110] direction 1
Area of plane  bh
 1 1 1 2
(iv) (321) plane   , ,    2, 3, 6  o
 3 2 1 where b  a 2  6.689 A
Intercepts of plane at Now
p  2, q  3, s  6 2

[321] direction is perpendicular to 

h2  a 2  2 a 2

 2

  3 a 2
 4
  2

(321) plane  
6 o
_______________________________________ So h   4.73  5.793 A
2

1.16
(a)
Area of plane
1 1 1
 , ,    313
1 3 1
(b) 
1
2

6.68923  10 8 5.79304  10 8  
1 1 1
 , ,   121  19.3755  10 16 cm 2
4 2 4
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
1
3 (c) (111) plane:
Surface density 6
 Surface density
19.3755  10 16 2

2
 2.58  1014 cm
 
3 2 5.43  10 8  2

(b) bcc  7.83  10 14 cm 2

(i) (100) plane: _______________________________________
1
Surface density   4.47  1014 1.21
4 2.37 
2
a 4r o

cm 2 a   6.703 A
2 2
(ii) (110) plane:
(a) #/cm 3
2
Surface density  1 1
a 2
2 8  6
8 2  4
 6.32  1014 cm 2 
(iii) (111) plane:
a 3

6.703  10 8  3

1  1.328  10 22 cm 3
3
Surface density 6 1 1
 4  2
19.3755  10 16 (b) #/cm 2
 4 2
2 2
 2.58  10 14
cm a 2
(c) fcc 2

(i) (100) plane:
2
 6.703 10  8 2
2
Surface density  2  8.94  10
14
2
 3.148  10 14
cm
a
cm 2 (c) d 
a 2

 6.703 2  4.74 Ao
(ii) (110) plane: 2 2
2 1 1
Surface density  (d) # of atoms  3   3   2
a 2
2 6 2
2 Area of plane: (see Problem 1.19)
 6.32  1014 cm o
(iii) (111) plane: b  a 2  9.4786 A
1 1
3
 3 h
6a o
 8.2099 A
Surface density 6 2
 2
19.3755  10 16 Area
 1.03  10 15 cm 2
_______________________________________

1
2
bh 
1
2

9.4786  10 8 8.2099  10 8  
 3.8909  10 15 cm 2
1.20
(a) (100) plane: - similar to a fcc:
2
Surface density  2

5.43  10 8  2 #/cm 2 
3.8909  10 15
2
 6.78  10 14 cm = 5.14  10 14 cm 2

(b) (110) plane:

a 3
d  
 6.703 3  3.87 Ao
4
Surface density  3 3

2 5.43  10 8  2
_______________________________________
2
 9.59  10 14 cm
1.22
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
Density of silicon atoms  5  10 22 cm 3 1
Volume density  3  4  10 cm 3
15
and d
4 valence electrons per atom, so o
Density of valence electrons  2  10 23 cm So d  6.30  10 6 cm  d  630 A
3 o
We have a  5.43 A
o
_______________________________________
d 630
Then   116
1.23 ao 5.43
Density of GaAs atoms _______________________________________
8
  4.44  10 22 cm

5.65  10 8 3

3

An average of 4 valence electrons per atom,

So
Density of valence electrons
 1.77  10 23 cm 3
_______________________________________

1.24
5  1017
(a)  100%  10  3 %
5  10 22

2  1015
(b)  100%  4  10  6 %
5  10 22

_______________________________________

1.25
(a) Fraction by weight


 2 10 10.82  1.542 10
16
7

5 10  28.06
22

(b) Fraction by weight


10  30.98  2.208 10
18
5

5 10  28.06
22

_______________________________________

1.26
1
Volume density  3
 2  10 16 cm 3
d
o
So d  3.684  10 6 cm  d  368.4 A
o
We have a  5.43 A
o
d 368.4
Then   67.85
ao 5.43
_______________________________________

1.27