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Self Running Free Energy Device Muller Motor Generator Romerouk Version1 1
Self Running Free Energy Device Muller Motor Generator Romerouk Version1 1
FS3KM-9
HIGH-SPEED SWITCHING USE
6.5 ± 0.3
3 ± 0.3
15 ± 0.3
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25 2.54 ± 0.25
4.5 ± 0.2
1 2 3
2.6 ± 0.2
w
q GATE
w DRAIN
¡VDSS ................................................................................ 450V q
e SOURCE
¡rDS (ON) (MAX) ................................................................. 3.5Ω
¡ID ............................................................................................ 3A e
¡Viso ................................................................................ 2000V TO-220FN
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3KM-9
HIGH-SPEED SWITCHING USE
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V 450 — — V
V (BR) GSS Gate-source breakdown voltage IG = ±100µA, VDS = 0V ±30 — — V
IGSS Gate-source leakage current VGS = ±25V, VDS = 0V — — ±10 µA
IDSS Drain-source leakage current VDS = 450V, VGS = 0V — — 1 mA
VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 2 3 4 V
rDS (ON) Drain-source on-state resistance ID = 1A, VGS = 10V — 2.7 3.5 Ω
VDS (ON) Drain-source on-state voltage ID = 1A, VGS = 10V — 2.7 3.5 V
yfs Forward transfer admittance ID = 1A, VDS = 10V 1.0 1.5 — S
Ciss Input capacitance — 300 — pF
Coss Output capacitance VDS = 25V, VGS = 0V, f = 1MHz — 35 — pF
Crss Reverse transfer capacitance — 6 — pF
td (on) Turn-on delay time — 13 — ns
tr Rise time — 10 — ns
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω
td (off) Turn-off delay time — 30 — ns
tf Fall time — 30 — ns
VSD Source-drain voltage IS = 1A, VGS = 0V — 1.5 2.0 V
Rth (ch-c) Thermal resistance Channel to case — — 4.17 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA
50 101
7
5 tw=10µs
POWER DISSIPATION PD (W)
3
DRAIN CURRENT ID (A)
40 100µs
2
100
30 7 1ms
5
3
2 10ms
20
10–1
7 DC
5 TC = 25°C
10
3 Single Pulse
2
0 10–2
0 50 100 150 200 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
10 5
PD = 30W TC = 25°C PD = 30W TC = 25°C
Pulse Test Pulse Test VGS=20V
10V
DRAIN CURRENT ID (A)
8 4
8V
6 3
VGS=20V 6V
4 10V 2
8V
6V
2 1
5V
5V
0 0
0 10 20 30 40 50 0 4 8 12 16 20
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3KM-9
HIGH-SPEED SWITCHING USE
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
32 8
VOLTAGE VDS (ON) (V)
20V
24 6
ID=4A
16 4
3A
8 2A 2
1A
0 0
0 4 8 12 16 20 10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101
8
FORWARD TRANSFER
ADMITTANCE yfs (S)
3
2 TC=25°C
6
100
4 7 75°C
125°C
5
3
2
2
0 10–1 –1
0 4 8 12 16 20 10 2 3 5 7 100 2 3 5 7 101
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
7 5
5 Tch = 25°C
3 VDD = 200V
3 VGS = 10V
2 Ciss 2
SWITCHING TIME (ns)
tf
CAPACITANCE
102 102
7
5 7
5 td(off)
3 Coss
2 3
2
101 td(on)
7
5 Tch=25°C Crss 101 tr
f=1MHz
3 VGS=0V 7
2 5
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 10–1 2 3 5 7 100 2 3 5 7 101
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3KM-9
HIGH-SPEED SWITCHING USE
25°C
12 200V 6
400V 75°C
8 4
4 2
0 0
0 4 8 12 16 20 0 0.8 1.6 2.4 3.2 4.0
5 ID = 1/2ID
Pulse Test 4.0
VOLTAGE VGS (th) (V)
3
2
3.0
100
7 2.0
5
3
1.0
2
10–1 0
–50 0 50 100 150 –50 0 50 100 150
Feb.1999
This datasheet has been download from:
www.datasheetcatalog.com