® TN2540-G

SCR

FEATURES
HIGH SURGE CAPABILITY A
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY

DESCRIPTION
A G
The TN2540 series of Silicon Controlled Rectifiers
uses a high performance glass passivated tech- K
nology.
This SCR is designed for power supplies up to D2PAK
400Hz on resistive or inductive load.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

IT(RMS) RMS on-state current Tc= 100°C 25 A

(180° conduction angle)

IT(AV) Average on-state current Tc= 100°C 16 A

(180° conduction angle)

ITSM Non repetitive surge peak on-state current tp = 8.3 ms 314 A

(Tj initial = 25°C) tp = 10 ms 300

I2t I2t Value for fusing tp = 10ms 450 A2s

dI/dt Critical rate of rise of on-state current 100 A/µs
IG = 100 mA dIG /dt = 1 A/µs.

Tstg Storage junction temperature range - 40 to + 150 °C

Tj Operating junction temperature range - 40 to + 125

Tl Maximum temperature for soldering during 10s 260 °C

TN2540-
Symbol Parameter Unit
600G 800G
VDRM Repetitive peak off-state voltage 600 800 V
VRRM Tj = 125°C

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TN2540-G
THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth(j-a) Junction to ambient (S=1cm2) 45 °C/W

Rth(j-c) Junction to case for D.C 1.0 °C/W

GATE CHARACTERISTICS
PG (AV)= 1W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) VRGM = 5 V

ELECTRICAL CHARACTERISTICS

Symbol Test Conditions Type Value Unit

IGT VD = 12V (DC) RL= 33Ω Tj= 25°C MIN 3 mA

MAX 40

VGT VD = 12V (DC) RL= 33Ω Tj= 25°C MAX 1.3 V

VGD VD = VDRM RL = 3.3kΩ Tj= 125°C MIN 0.2 V

IH IT= 200mA Gate open Tj= 25°C MAX 50 mA

IL IG = 1.2 IGT Tj= 25°C MAX 90 mA

VTM ITM= 50A tp= 380µs Tj= 25°C MAX 1.5 V

IDRM VD = VDRM Tj= 25°C MAX 5 µA

IRRM VR = VRRM Tj= 125°C MAX 4 mA

dV/dt VD=67%VDRM Gate open Tj= 125°C MIN 500 V/µs

ORDERING INFORMATION Add "-TR" suffix for Tape & Reel shipment

TN 25 40 - 600 G
PACKAGES :
SCR G: D2PAK

CURRENT SENSITIVITY VOLTAGE

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 TN2540-G
Fig. 1: Maximum average power dissipation ver- Fig. 2 : Correlation between maximum average
sus average on-state current . power dissipation and maximum allowable tem-
peratures (Tamb and T case) for different thermal
resistances heatsink+contact.
P(W) P(W) Tcase (°C)
25 25 Rth=3°C/W Rth=2°C/W Rth=1°C/W Rth=0°C/W
D.C.
α=180° 100
α=120°
20 20
α=90°
105
α=60°
15 α=30° 15
110
10 10
115

5 5 120
α=180°
IT(AV)(A) Tamb(°C)
0 0 125
0 5 10 15 20 25 0 20 40 60 80 100 120 140

Fig. 3: Average and D.C. on-state current versus Fig. 4: Relative variation of thermal impedance
case temperature. versus pulse duration.

IT(AV)(A) K=[Zth/Rth]
30 1.00
D.C.
25 Zth(j-c)

20
α=180° Zth(j-a)

15 0.10

10

5
Tcase(°C) tp(s)
0 0.01
0 25 50 75 100 125 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 5: Relative variation of gate trigger current and Fig. 6: Non repetitive surge peak on-state current
holding current versus junction temperature. versus number of cycles.

IGT,IH[Tj]/IGT,IH[Tj=25°C] ITSM(A)
2.5 320
Tj initial=25°C
IGT
280 F=50Hz
2.0
240
1.5 200
160
IH
1.0 120
80
0.5
40 Number of cycles
Tj(°C)
0.0 0
-40 -20 0 20 40 60 80 100 120 140 1 10 100 1000

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TN2540-G

Fig. 7: Non repetitive surge peak on-state current Fig. 8: On-state characteristics (maximum values).
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I2t.

ITSM(A),I²t(A²s) ITM(A)
1000 300
ITSM Tj initial=25°C
100
I²t
500 Tj=Tj max.
Tj max.:
Vto=0.77V
Rt=14mΩ
10 Tj=25°C
200

tp(ms) VTM(V)
100 1
1 2 5 10 0 1 2 3 4 5

Fig. 9: Thermal resistance junction to ambient ver- Fig. 10: Typical reflow soldering heat profile, either
sus copper surface under tab (Epoxy printed circuit for mounting on FR4 or metal-backed boards.
board FR4, copper thickness: 35µm).

Rth(j-a) (°C/W) T (°C)

80 250 245°C

70 215°C
200
60
50 150 Epoxy FR4
board
40
30 100

20 Metal-backed
50 board

10 S(Cu) (cm²)
t (s)
0 0
0 4 8 12 16 20 24 28 32 36 40 0 40 80 120 160 200 240 280 320 360

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 TN2540-G

PACKAGE MECHANICAL DATA

D2PAK
DIMENSIONS
REF. Millimeters Inches
A
Min. Typ. Max. Min. Typ. Max.
E
C2
L2 A 4.30 4.60 0.169 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
D
L B 0.70 0.93 0.027 0.037

L3
B2 1.25 1.40 0.048 0.055
A1 C 0.45 0.60 0.017 0.024
B2 C2 1.21 1.36 0.047 0.054
C R
B D 8.95 9.35 0.352 0.368
E 10.00 10.28 0.393 0.405
G
G 4.88 5.28 0.192 0.208
A2
2.0 MIN.
L 15.00 15.85 0.590 0.624
FLAT ZONE L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
V2
R 0.40 0.016
V2 0° 8° 0° 8°

FOOT PRINT DIMENSIONS (in millimeters)

16.90
MARKING: TN2540
x00G

10.30 5.08

1.30

3.70
8.90

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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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