MITSUBISHI RF POWER MODULE M57745 430-450MHz, 12.5V, 33W, SSB MOBILE RADIO. OUTLINE DRAWING Oreniens mmm | [BLOCK DIAGRAM 3 1 a i oa iro Pw Pm =e PUT Boo | DASE BAS SUPPLY + vou et Oo SUPPLY 7 voce! dnd. 00 SUPPLY 2. set HI Groom curr Si] [eameeeeemememeecameean |e to eno : FN 1 lee a He j ABSOLUTE MAXIMUM RATINGS (Te= 25°C unless otherwise noted) Sabot ——Franater Conaions [anes One Vee] Supyvalige 7 17 v Van ——[ Base bis — 10 v Tee | Total eure : 10 A Pras | Inout power os: W Patan | Ovtout power — - 40 ow ei | Onnaton aed taneares = eto] —e Tass | Storage temoerature [=a te ti0 © Nola, Above putts ae guxarien] epee ELECTRICAL CHARACTERISTICS (Tc =25°C unless otherwise notes) Tims Symbol Parameter : Test coneitions a ae] Ut | Freaueney renee 7 430 | ~ 450 Fo | Ourout ower Pn-03W 3 77 Total effiseney view iasv 40 Bie Bra harmerie Vea = av = | Sed harmon Zo=2.=509 =30_| in Inoct VSWR 25. : eat No deoradation . coe eee Load VSWR= 8.8: 1 (All phase), | or destroy Zo= 509 Note Above partes, vainga Wnts ond condone ow subject to charge Nov. 97MITSUBISHI RF POWER MODULE M57745 430-450MHz, 12.5V, 33W, SSB MOBILE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, LINEAR POWER GAIN, TOTAL EFFICIENCY, INPUT VSWR OUTPUT POWER, TOTAL COLLECTOR VS. FREQUENCY CURRENT, VS. INPUT POWER *9 100 109 rea im ‘a = vent, Pola Baas « z 38 ofronase ' oS > al = z¢ + £ 2 ho = &2 2 z 27 Pg £3 Zz = 4 eo € 5 Bee fee ee ze Eo ler & 82 wf tobe 2 4 Hoe & pqotwaoaw | he oa t nz 2 ot et jo ot Jor cane ees a Eee ao ad FReQUENcr + te INPUT POWER Pin (ni) INTERMODULATION DISTORTION INPUT IMPEDANCE, OUTPUT IMPEDANCE Vs. OUTPUT POWER Vs, FREQUENCY “7 a eure INTERMOOUUIION OISTORTICN (OUTPUT FOWER Povoem) (W) nov 7MITSUBISHI RF POWER MODULE. M57745 430-450MHz, 12.5V, 33W, SSB MOBILE RADIO DESIGN CONSIDERATION OF HEAT RADIA- TION. Please refer to following consideration when designing heat shink. 1. Junction temperature of incorporated transis: tors at standard operation. (1) Thermal resistance between junction and package of incorporated transistors, a) First stage transistor Runners = 12° CW (Typ) 'b) Second stage transistor Ruhinei2 =4°CMW (Typ) Final stage transistor en (ocia * 1-75°CAW (Typ.) Junction temperature of incorporated transistors at standard operation Contin for sa Po = 30W, Voc Qi lard operstion. 2.5V, Pin = 0.9W, ny = 40% (min ‘mum rating), Poy N28 1!" = 2W, Pop) = BW, Iy = 6A, (719) = 0.354, ro? 32A, |73) = 4,334) Note 1: Output power ofthe first stage transistor Note 2: Output power of the second stage transistor Note 3: Circuit current ofthe first stage transistor Note 4: Cirouit current of the second stage transistor Note 8: Cirouit current of the final stage transistor © Junction temperature of se frst stage ransstor Tyr = (ec * Ir = Por + Pin) x Renij-ci1 + To! 12.5 x0.95 -2 +03) x 12+ Te 2+ Te (°C) Note 6: Package temperature of device Junction temperature of the second stage transistor Tia = (Wee x Ir2 ~Poz + Por) x Renijel2 * Te 125 x 1.32-8+2)x 4 + Te 2+ Te (C) «Junction temperature of the final stage transistor Tia = (oe x Ira ~ Po * Po2) X Renii-c13 * Te = (125 x 4.39 30 +8) x 1.75 + Te <56+T. (°C) 2. Heat sink design In thermal design of heat sink, try to keep the package temperature at the upper limit of the operating ambient temperature (normally T= 60°C) and at the output power of 30W below 90°C. ‘The thermal resistance Ryn(cug)(! of the heat sink to real ine this: Renicnad a: 80 (Polnt)~PotPin (30/0.4) - 30 +0.3 86 (°C/W) Note 7: Inclusive of the contact thermal resistance be- tween device and heat sink. Mounting the heet sink of the-obove thermal resistance on the device, Tix = 122°C, Tia = 132°C, Tia = 146°C at Ta = 60°C, Te= 90°C, In the annual average of ambient temperature is 30°C, Tjy = 92°C, Tin = 102°C, Tig = 116°C. ‘As the maximum junction temperature of these incorpo rated transistors Tjmax 818 175°C, application under fully erated condition is ensure. Tor 7