FUNGONAMiENTO DEL MOSFET DE
Carackeristica de transperencia
Toma)
f Eom
TIPO INCREMENTAL
Cana) n induaido
He Wo ly Cox (%)
re long ck car
Toma) He la L iy Mee
ace oe le drea ie
Cox
iP
% i + =
Vr Vis Vis Yes Ven i Vs ays 5 3
threshold re
- en re ion Ohmica
K+ faninelo de meric fancit fy K [a (es Vr)Vos Vos J mi
f Experime nialmenie
To = kK (Ves-Vr)
m= tp ~ 2k (Yos- Vr)
A , Totmendde) _ AVES | Vas. gre
[Ves(cencet}— Vr]
ke Tocencendido Riis enundice — br *CMOS: Complementary Mos
|
Se
A MOSFET
j canal p
aa fn
i + MOSFET
ENTI i
pe oe é Canal N
Gp ite .ce oe,
= T
Fundonomterlo 7
tuardo ta enlruda eile” en un nivel alto => (1) Mateo
od qu Ver = Vis) ef morrer n-ch fine a su
fever Ven sn qu lo coloca en estado de saluracon ON
j Vouion = [OJ pus el morret N-ch es cant corlociruilo
entre Dn 4 9
fn cambio, qparta al morer P-ch Vepsp =O porgut
Gp cle’ af “mmo pobnid gut SpBS170
Electrical Characteristics (7¢ = 250 unless oineewiss noted)
‘Symbol Parameter I Conditions mio | typ | max | units
arrcnnpacrensTes
is_| Oansnece Baio Vp | Weg = B= 1A = 7
tan | Zuo Gus vouge aca [veg = 2 ag =O oe fn
tos_| te eta, Fo Ves = 1.466 = 07 ‘elm
on canacrensTics (1
Nesioy | ato resto vonage Vos = Vos. oa fan] s |v
ast | Ste Dansouce poses zfs | a
Senne
a [reer Taree = wT ole |
Brune cipacrensnics
Ce | et ecerce aa en = [ole
Cons Ouiput Capacitance: —— a7_| 90 | oF
| Rote Tut cae 7 be Ce
Surroue GuanAcTeMSTIES ew
te _| Tun Te Yao Ae = mA = TOV Le
tae [tant scan ele
MERA CHARACTERS
ex | Tere Restarts Ano we Te
MMBF170
Electrical Characteristics (1. - 25'c uvsss tnerwse notes)
‘Symbol Parameter I ‘Conditions. ‘win [tye | wax | vrs
arrcnanacrens
Bvass_| on sove Senor Vase Vag“ 01> pa a v
tas zuo tue vage runcet Yon = Vas = 07 oa [an
tase Gao ey hon, od es = 18. = ‘elm
oncaracreneice fe
Toso | Sa DairSorce Ver 16 = f0mA aie
Senos
a [Foe Tsai Ta Fieaga la = BA a
Pru canacrensmis
ce Vos 1 og au = aloe
a eb
—— hw br
caer cumcranTC
To ie = fda aa 107 ats
2 men a2
een onacrensns
Ta Ther even Arco to aa eee
toot oth br