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Inverted bulk-heterojunction solar cell with cross-linked hole-blocking layer

Article  in  Organic Electronics · May 2014

DOI: 10.1016/j.orgel.2014.02.009

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 ORGELE 2463 No. of Pages 6, Model 3G
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Organic Electronics xxx (2014) xxx–xxx
1

Contents lists available at ScienceDirect

Organic Electronics
journal homepage: www.elsevier.com/locate/orgel

5
6

3 Inverted bulk-heterojunction solar cell with cross-linked

4 hole-blocking layer
7 Q1 Yasemin Udum a,b, Patrick Denk a, Getachew Adam a, Dogukan H. Apaydin a, Andreas Nevosad c,
8 Christian Teichert c, Matthew. S. White a, Niyazi. S. Sariciftci a, Markus C. Scharber a,⇑
9 a
Institute for Organic Solar Cells, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz, Austria
10 b
Institute of Science and Technology, Department of Advanced Technologies, Gazi University, 06570 Ankara, Turkey
11 c
Institute of Physics, Montanuniversitaet Leoben, Franz-Josef-Straße 18, 8700 Leoben, Austria

13
12
14
a r t i c l e i n f o a b s t r a c t
1
2 6
8
17 Article history: We have developed a hole-blocking layer for bulk-heterojunction solar cells based on 29
18 Received 3 November 2013 cross-linked polyethylenimine (PEI). We tested five different ether-based cross-linkers 30
19 Received in revised form 10 February 2014 and found that all of them give comparable solar cell efficiencies. The initial idea that a 31
20 Accepted 11 February 2014
cross-linked layer is more solvent resistant compared to a pristine PEI layer could not be 32
21 Available online xxxx
confirmed. With and without cross-linking, the PEI layer sticks very well to the surface 33
of the indium–tin–oxide electrode and cannot be removed by solvents used to process 34
22 Keywords:
PEI or common organic semiconductors. The cross-linked PEI hole-blocking layer functions 35
23 Q2 Organic solar cell
24 Device design
for multiple donor–acceptor blends. We found that using cross-linkers improves the 36
25 Electrical contact reproducibility of the device fabrication process. 37
26 Stability Ó 2014 The Authors. Published by Elsevier B.V. This is an open access article under the CC 38
27 BY license (http://creativecommons.org/licenses/by/3.0/). 39

40
41
42 1. Introduction aluminum. Under ambient conditions these low work 58
function metals typically form non-conductive oxides 59
43 Within the field of organic solar cells, the conventional leading to a rapid degradation of the solar cell performance 60
44 bulk-heterojunction device comprises a substrate covered [5,6]. Therefore rigorous encapsulation of these devices is 61
45 with a transparent conductive oxide, an electron blocking required using costly packaging materials with very low 62
46 layer, a photoactive layer, in some case a hole blocking oxygen and water permeation. 63
47 layer and a metal electrode [1]. Often indium-tin-oxide is Inverted bulk-heterojunction solar cells are based on an 64
48 used as the transparent electrode, and poly(3,4-ethylene- opposite layer sequence having the hole blocking layer 65
49 dioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) is ap- between the transparent electrode and the photoactive 66
50 plied as electron blocking layer. TiOx, CsCO3 or LiF are layer. The top contact uses an electron blocking layer and 67
51 examples of hole blocking layers used in devices based a high work-function, air-stable material like silver or gold. 68
52 on conventional design [1–3]. The first inverted organic solar cell was prepared by Shi- 69
53 The photoactive bulk-heterojunction layer is located rakawa et al. [7] applying a compact ZnO hole-blocking 70
54 between the hole and electron blocking layers with layer and a gold layer as top electrode. Various other 71
55 domains of acceptor material dispersed in a donor matrix. oxides (such as solution processed TiOx [8] and ZnO[9]), 72
56 Devices are completed with a non-transparent electrode organic or polymeric interlayers[10] or CsCO3[11] were 73
57 made of a low work function metal like calcium or reported as efficient hole-blocking layers on ITO. As 74
electron blocking layers, PEDOT:PSS and different p-type 75
oxides like MoO3 or V2O5 have been applied [12]. Substan- 76
⇑ Corresponding author. tially improved stabilities under ambient conditions were 77
E-mail address: Markus_Clark.Scharber@jku.at (M.C. Scharber).

http://dx.doi.org/10.1016/j.orgel.2014.02.009
1566-1199/Ó 2014 The Authors. Published by Elsevier B.V.
This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/3.0/).

Please cite this article in press as: Y. Udum et al., Inverted bulk-heterojunction solar cell with cross-linked hole-blocking layer, Org. Elec-
tron. (2014), http://dx.doi.org/10.1016/j.orgel.2014.02.009
 ORGELE 2463 No. of Pages 6, Model 3G
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2 Y. Udum et al. / Organic Electronics xxx (2014) xxx–xxx

78 reported for inverted devices while the power conversion substrates at 2000 rpm and then annealed at 105 °C on a 136
79 efficiencies of conventional and inverted bulk-heterojunc- hotplate for 10 min. Then the blend of P3HT and PCBM 137
80 tion solar cells made of the same absorber blend were was spin coated at 1500 rpm. and annealed at 110 °C for 138
81 found to be comparable. In addition, Krebs et al. demon- 5 min. The active layer thickness was 80 nm. Finally, an 139
82 strated that inverted cells can be manufactured solely via 8 nm MoO3 layer and a 100 nm Ag layer were evaporated 140
83 solution processing making the inverted design especially through a shadow mask to define the active area 141
84 interesting for large area coating [13]. (9 mm2) and form the hole-collecting electrode. Conven- 142
85 The amine-rich polymer polyethylenimine (PEI) may tional bulk heterojunction solar cells were prepared by 143
86 also serve as a hole-blocking layer in organic solar cells, spin-coating a 50 nm thick PEDOT:PSS layer (Clevios P 144
87 as published in the patent application (US2008/0264499 4083) on top of a cleaned glass substrates coated with 145
88 A1, now patent US8242356) in 2008. Recently Zhou et al. ITO. The active layer was deposited and annealed as 146
89 [14] reported the use of PEI as thin interlayer between described above. The device was finished by evaporating 147
90 the photoactive layer and an electrode material. The 0.8 nm of LiF and 80 nm of Aluminium through a shadow 148
91 authors demonstrated that applying PEI on various differ- mask. Devices were characterized on a Steuernagel solar 149
92 ent materials shifts the work function and leads to an elec- simulator and external quantum efficiencies were 150
93 tron selective contact. This system allows air-stable measured on a home-built setup based on a white-light 151
94 materials to be used in place of reactive Ca or LiF. Here lamp, a monochromator and a lock-in detection. Device 152
95 we report a similar approach applying a cross-linked PEI lifetime studies were performed by storage of the devices 153
96 layer on top of ITO. The motivation for this work was to in ambient air conditions, with periodic measurements 154
97 show that cross-linked PEI-layers were insoluble and more under white light. 155
98 robust, which may be used in solution processed multi- Kelvin probe force microscopy (KPFM) was employed to 156
99 junction devices. Cross-linking PEI is very well known in confirm the intended changes in work function of the PEI 157
100 the framework of membrane science and we have selected interlayers. KPFM is a variant of atomic force microscopy 158
101 5 different ether-based cross-linkers [15]. After some opti- (AFM) that allows mapping the local contact potential dif- 159
102 mization, high performance devices were made with all of ference between an AFM tip and the sample surface 160
103 the selected cross-linkers. We found that all PEI films, with [20,21]. The technique therefore yields the local work 161
104 and without cross-linking, were robust to various solvent function and is also applicable to organic thin films 162
105 treatments. However, the developed process for cross- [22,23]. The KPFM investigations were performed on an 163
106 linked PEI interlayers is easy and insensitive to small vari- MFP-3D atomic force microscope from AsylumResearch. 164
107 ations in the processing conditions, which is essential for As probes, TiN coated NSG 03 silicon cantilevers from 165
108 processing very thin (<10 nm) layers. NT-MDT were employed. These probes feature a tip radius 166
below 35 nm, a typical resonance frequency of 90 kHz and 167
a spring constant of 1.74 N/m. For the TiN coated tip, a 168
109 2. Experimental work-function of approximately 5 eV was estimated [24]. 169
A profilometer (DektakXT, Bruker) was used to determine 170
110 Regio-regular poly(3-hexylthiophen-2,5-diyl) (P3HT) the layer thickness of the cross-linked PEI layers. After 171
111 was purchased from Rieke Metals, Poly[[4,8-bis[(2-ethyl- scraching the layer with a sharp needle the profile was 172
112 hexyl)oxy]benzo[1,2-b:4,5-b0 ]dithiophene-2,6-diyl][3-fluo scanned with the dektak tip (see Fig. 1). Q3 173
113 ro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]]
114 (PTB7) was purchased from 1-Material, PC60BM was pur-
115 chased from SolenneBV, polyethylenimine branched 3. Results and discussion 174
116 (Mw = 800 g/mol) and the cross-linkers glycerol diglycidyl
117 ether (CL1), bisphenol A diglycidyl ether (CL2), 1,4-butane- The work function of the different bottom electrodes 175
118 diol diglycidyl ether (CL3), poly(propylene glycol) diglyc- was studied using Kelvin probe force microscopy. Typical 176
119 idyl ether (CL4) and trimethylolethane triglycidyl ether Kelvin probe pictures of ITO and an ITO layer covered with 177
120 (CL5) were purchased from Sigma Aldrich [2]. Materials cross-linked PEI are shown in Fig. 2. The complete set of 178
121 were used as received without further purification. P3HT topographies and CPD scans can be found in the Supple- 179
122 and PC60BM were dissolved together in chlorobenzene mentary content. Average values for the contact voltage 180
123 (1:0.7 wt%). PEI was dissolved in butanol (0.27 mg/ml). potentials of all investigated devices are summarized in 181
124 PEI and crosslinkers were also dissolved in butanol at Table 1. The measurements show that the applied 182
125 following weight ratios per milliliter of butanol: PEI- and cross-linked PEI-layers reduce the work function 183
126 PEI/Glycerol diglycidyl ether (0.27 mg/0.44 mg), of the ITO by about 400–500 mV. The consistently high 184
127 PEI/Bisphenol A diglycidyl ether (0.27 mg/0.74 mg), PEI/ VOC and FF in our solar cells show that this large shift is 185
128 1,4-Butanediol diglycidyl ether (0.27 mg/0.44 mg), PEI/ sufficient to convert the ITO into a high performance 186
129 Poly(propylene glycol) diglycidyl ether (0.27 mg/0.82 mg) hole-blocking electrode. 187
130 and PEI:Trimethylolethane Triglycidyl Ether (0.27 mg/ The topographies of all investigated surfaces were 188
131 0.42 mg). Devices were fabricated on indium tin oxide found to be very similar. Please note, that the CPD 189
132 (ITO) coated glass substrates with a sheet resistance fluctuations in the KPFM images, presented in Fig. 2, as 190
133 15 X/square. The substrates were cleaned by sonication for the other samples investigated are in the range of 191
134 in acetone and isopropanol for 15 min. PEI-solution and 0.05 V. These fluctuations are mainly caused by slight 192
135 the PEI:Crosslinker solutions were spin coated on the ITO changes of the AFM-tip properties during scanning. This 193

Please cite this article in press as: Y. Udum et al., Inverted bulk-heterojunction solar cell with cross-linked hole-blocking layer, Org. Elec-
tron. (2014), http://dx.doi.org/10.1016/j.orgel.2014.02.009
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Fig. 1. Schematic device structure of a conventional and an inverted bulk-heterojunction solar cell.

Fig. 2. 5 by 5 lm topography images and corresponding contact potential difference maps of ITO on glass (a) and Glass/ITO/PEI + glycerol diglycidyl ether
(CL1) (b).

Table 1
Average contact potential differences of different layers.

Layer stack Contact potential difference (V)

Glass/ITO 0.05
Glass/ITO/PEI 0.39
Glass/ITO/PEI + glycerol diglycidyl ether (CL1) 0.49
Glass/ITO/PEI + bisphenol A diglycidyl ether (CL2) 0.57
Glass/ITO/PEI + 1,4-butanediol diglycidyl ether (CL3) 0.55
Glass/ITO/PEI + poly(propylene glycol) diglycidyl ether (CL4) 0.53
Glass/ITO/PEI + trimethylolethane triglycidyl ether (CL5) 0.47

194 confirms the high homogeneity in work function of the The current–voltage curves of typical solar cells, with 201
195 prepared films. and without PEI-interlayers, are plotted in Fig. 3, and the 202
196 The layer thickness measurements performed with a important device parameters are summarized in Table 2. Q4 203
197 profilometer confirm that the PEI layers are very thin. All short circuit currents were corrected for the spectral 204
198 Thickness in the range of 3–5 nm were observed. Due to mismatch of the used solar simulator by determining the 205
199 the roughness of the investigated layers, a precise determi- external quantum efficiency of the solar cells. The recorded 206
200 nation of the layer thickness was not possible. spectra are shown in the Supplementary content. 207

Please cite this article in press as: Y. Udum et al., Inverted bulk-heterojunction solar cell with cross-linked hole-blocking layer, Org. Elec-
tron. (2014), http://dx.doi.org/10.1016/j.orgel.2014.02.009
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208 All devices with a thin PEI interlayer between ITO and voltages 620 mV were obtained. Device data can be 231
209 the active layer show a comparable performance. Applying found in the Supplementary content, Table S1. It is even 232
210 the same processing conditions, we found no significant more surprising that pure PEI and the cross-linked PEI lay- 233
211 difference between the five tested cross-linkers in our ers were equally robust to these solvent treatments. It ap- 234
212 experiments. It is interesting to note that even the device pears that there is a strong interaction between ITO and PEI 235
213 with a MoO3 electron blocking layer and no hole-blocking leading to an immobilization of the PEI-polymer on the ITO 236
214 layer exhibits a diode-like current–voltage curve and a surface. 237
215 power conversion efficiency of 1.6%. This suggests that The cross-linked PEI-layers also work for other polymer- 238
216 only one optimized contact is sufficient for a working fullerene blends different to P3HT/PCBM. We demonstrate 239
217 bulk-heterojunctions solar cell. their use with Poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2- 240
218 We then exposed the various PEI layers (on ITO) to sev- b:4,5-b0 ]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)c- 241
219 eral different solvent treatments before deposition of the arbonyl]thieno[3,4-b]thiophenediyl]] (PTB7)-PCBM devices 242
220 active layer. This was primarily to test the robustness of prepared following the procedure described in [10], result- 243
221 the PEI to potential processing solvents for high through- ing in devices with PCE > 6% (see Supplementary content, 244
222 put manufacturing and even tandem solar cells. We find Fig. S3). In general the power conversion efficiencies of con- 245
223 that soaking the processed PEI layers in butanol (the same ventional and inverted devices were found to be very simi- 246
224 solvent used to deposit the PEI) for 30 min has essentially lar. In some cases slightly different processing conditions 247
225 no impact on the device performance. Exposing the PEI- of the active layer were required for the preparation of high 248
226 layers to solvents for the organic semiconductors like chlo- performance inverted solar cells. This may be related to a 249
227 robenzene for 2 h, also showed minimal effects in the final vertical phase separation of the donor and acceptor. For 250
228 performance. The device parameters are statistically indis- the conventional device, an acceptor rich phase near the 251
229 tinguishable with or without the solvent treatments, and low work-function electrode is preferable and the top sur- 252
230 fill-factors between 60% and 67% and an open circuit face of the photoactive layer of an inverted solar cell should 253

Fig. 3. Current–voltage curves of different P3HT-PCBM solar cells with different interlayers between ITO and photoactive layer and the chemical structures
of the investigated cross-linkers.

Table 2

Sample Jsc (mA/cm2) Voc (mV) FF (%) Efficiency (%)

Conventional DeviceITO/PEDOT:PSS/P3HT:PC61BM/LiF/Alu 6.3 590 61 2.3
ITO/P3HT:PC61BM/MoO3/Ag 5.7 550 52 1.6
ITO/PEI/P3HT: PC61BM /MoO3/Ag 6.4 620 67 2.7
ITO/PEI:CL1/P3HT:PC61BM/MoO3/Ag 6.9 620 67 2.9
ITO/PEI:CL2/P3HT:PC61BM/MoO3/Ag 6.6 620 64 2.6
ITO/PEI:CL3/P3HT:PC61BM/MoO3/Ag 6.6 630 69 2.9
ITO/PEI:CL4/P3HT:PC61BM/MoO3/Ag 6.4 620 68 2.7
ITO/PEI:CL5/P3HT:PC61BM/MoO3/Ag 6.8 620 68 2.9

Please cite this article in press as: Y. Udum et al., Inverted bulk-heterojunction solar cell with cross-linked hole-blocking layer, Org. Elec-
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Y. Udum et al. / Organic Electronics xxx (2014) xxx–xxx 5

Fig. 4. Power conversion efficiencies of conventional and inverted P3HT-PCBM devices stored under ambient conditions (left). Right: Current–voltage
curves measured on a conventional device during the degradation process.

254 be predominantly made of donor material. This can be (FWF) within the Wittgenstein Prize scheme (Z222-N19 290
255 achieved by using different solvents or solvent mixtures or Solare Energieumwandlung). 291
256 by working with processing additives [2].
257 The inverted devices exhibit significantly better stabil-
258 ity under ambient conditions. In Fig. 4, the power conver- Appendix A. Supplementary material 292

259 sion efficiencies measured after different storage times of

260 three conventional and two inverted devices are plotted. Supplementary material associated with this article can 293

261 While storage in air leads to a rapid degradation due to be found, in the online version, at http://dx.doi.org/10. 294

262 oxidation of the aluminum electrode in conventional 1016/j.orgel.2014.02.009. 295

263 devices, the performance of the inverted devices remains

264 essentially unchanged. Because these inverted cells are References 296
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