Smart High-Side Power Switch

BTS5215L

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Data Sheet 1 V1.1, 2007-05-29

 Smart High-Side Power Switch
BTS5215L

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Data Sheet 2 V1.1, 2007-05-29

 Smart High-Side Power Switch
BTS5215L

Pin Definitions and Functions Pin configuration

Pin Symbol Function
(top view)
1 GND Ground of chip
1•
2 IN1 Input 1,2 activates channel 1,2 in case of logic
GND 12 Vbb
4 IN2 high signal
IN1 2 11 NC
3 ST1 Diagnostic feedback 1 & 2 of channel 1,2 Vbb*
ST1 3 10 OUT1
5 ST2 open drain, low on failure
IN2 4 9 NC
6,12, Vbb Positive power supply voltage. Design the
ST2 5 8 OUT2
heat wiring for the simultaneous max. short circuit
slug currents from channel 1 to 2 and also for low Vbb 6 7 NC
thermal resistance * heat slug
7,9,11 NC Not Connected
8 OUT2 Output 1,2 protected high-side power output
10 OUT1 of channel 1 and 2. Design the wiring for the
max. short circuit current

Data Sheet 3 V1.1, 2007-05-29

 Smart High-Side Power Switch
BTS5215L

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 6) Vbb 43 V
Supply voltage for full short circuit protection Vbb 36 V
Tj,start = -40 ...+150°C
Load current (Short-circuit current, see page 6) IL self-limited A
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V VLoad dump3) 60 V
RI2) = 2 Ω, td = 400 ms; IN = low or high,
each channel loaded with RL = 13.5 Ω,
Operating temperature range Tj -40 ...+150 °C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC)4) Ta = 25°C: Ptot 3.1 W
(all channels active) Ta = 85°C: 1.6
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150°C4), see diagrams on page 10
IL = 3.5 A, EAS = 178 mJ, 0 Ω one channel: ZL 21.3 mH
IL = 7.0 A, EAS = 337 mJ, 0 Ω two parallel channels: 10
Electrostatic discharge capability (ESD) IN: VESD 1.0 kV
(Human Body Model) ST: 4.0
out to all other pins shorted: 8.0
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
Input voltage (DC) see internal circuit diagram page 9 VIN -10 ... +16 V
Current through input pin (DC) IIN ±0.3 mA
Pulsed current through input pin5) IINp ±5.0
Current through status pin (DC) IST ±5.0

1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
2) RI = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
5) only for testing
Data Sheet 4 V1.1, 2007-05-29
 Smart High-Side Power Switch
BTS5215L

Parameter and Conditions Symbol Values Unit

min typ max
Thermal resistance
junction - Case6) each channel: RthjC -- -- 5 K/W
junction – ambient6) Rthja -- -- --
@ 6 cm2 cooling area one channel active: -- 45 --
all channels active: -- 40 --

Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT); IL = 2 A
each channel, Tj = 25°C: RON -- 70 90 mΩ
Tj = 150°C: -- 140 180
two parallel channels, Tj = 25°C: -- 35 45
see diagram, page 11
Nominal load current one channel active: IL(NOM) 3.7 4.7 -- A
two parallel channels active: 7.4 9.5
Device on PCB6), Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected or pulled up7); IL(GNDhigh) -- -- 2 mA
Vbb = 32 V, VIN = 0,
see diagram page 9
Turn-on time8) IN to 90% VOUT: ton -- 100 250 µs
Turn-off time IN to 10% VOUT: toff -- 100 270
RL = 12 Ω
Slew rate on 8) 10 to 30% VOUT, RL = 12 Ω: dV/dton 0.2 -- 1.0 V/µs
Slew rate off 8) 70 to 40% VOUT, RL = 12 Ω: -dV/dtoff 0.2 -- 1.1 V/µs

6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
7) not subject to production test, specified by design
8) See timing diagram on page 12.
Data Sheet 5 V1.1, 2007-05-29
 Smart High-Side Power Switch
BTS5215L

Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ max
Operating Parameters
Operating voltage Vbb(on) 5.5 -- 40 V
Undervoltage switch off9) Tj =-40°C...25°C: Vbb(u so) -- -- 4.5 V
Tj =125°C: -- -- 4.510)
Overvoltage protection11) Vbb(AZ) 41 47 52 V
I bb = 40 mA
Standby current12) Tj =-40°C...25°C: Ibb(off) -- 4.5 10 µA
VIN = 0; see diagram page 11 Tj =150°C: -- -- 15
Tj =125°C: -- -- 1010)
Off-State output current (included in Ibb(off)) IL(off) -- 1 5 µA
VIN = 0; each channel
Operating current 13), VIN = 5V,
one channel on: IGND -- 0.6 1.2 mA
all channels on: -- 1.2 2.4
Protection Functions14)
Current limit, Vout = 0V, (see timing diagrams, page 12)
Tj =-40°C: IL(lim) -- -- 23 A
Tj =25°C: -- 15
Tj =+150°C:
9 -- ----
Repetitive short circuit current limit,
Tj = Tjt each channel IL(SCr) -- 12 -- A
two channels -- 12 --
(see timing diagrams, page 12)
Initial short circuit shutdown time Tj,start =25°C: toff(SC) -- 2 -- ms
Vout = 0V (see timing diagrams on page 12)
Output clamp (inductive load switch off)15) VON(CL) 41 47 52 V
at VON(CL) = Vbb - VOUT, IL= 40 mA
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis ∆Tjt -- 10 -- K

9) is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)
10) not subject to production test, specified by design
11) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram on page 9.
12) Measured with load; for the whole device; all channels off
13) Add IST, if IST > 0
14 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
15) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
Data Sheet 6 V1.1, 2007-05-29
 Smart High-Side Power Switch
BTS5215L

Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ max

Reverse Battery
Reverse battery voltage 16) -Vbb -- -- 32 V
Drain-source diode voltage (Vout > Vbb) -VON -- 600 -- mV
IL = - 2.0 A, Tj = +150°C

Diagnostic Characteristics
Open load detection voltage V OUT(OL) 1 1.7 2.8 4.0 V

Input and Status Feedback17)

Input resistance RI 2.5 4.0 6.0 kΩ
(see circuit page 9)
Input turn-on threshold voltage VIN(T+) -- -- 2.5 V
Input turn-off threshold voltage VIN(T-) 1.0 -- -- V
Input threshold hysteresis ∆ VIN(T) -- 0.2 -- V
Status change after positive input slope18) td(STon) -- 10 20 —s
with open load
Status change after positive input slope18) td(STon) 30 -- -- —s
with overload
Status change after negative input slope td(SToff) -- -- 500 —s
with open load
Status change after negative input slope18) td(SToff) -- -- 20 —s
with overtemperature
Off state input current VIN = 0.4 V: IIN(off) 5 -- 20 µA
On state input current VIN = 5 V: IIN(on) 10 35 60 µA
Status output (open drain)
Zener limit voltage IST = +1.6 mA: VST(high) 5.4 -- -- V
ST low voltage IST = +1.6 mA: VST(low) -- -- 0.6

16) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 9).
17) If ground resistors R
GND are used, add the voltage drop across these resistors.
18) not subject to production test, specified by design

Data Sheet 7 V1.1, 2007-05-29

 Smart High-Side Power Switch
BTS5215L

Truth Table
( each channel )
IN OUT ST
Normal operation L L H
H H H
Open load L Z L19)
H H H
Overtemperature L L H
H L L

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal valid after the time delay shown in the timing diagrams

Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel (see truth
table). If switching channel 1 to 2 in parallel, the status outputs ST1 and ST2 have to be configured as a 'Wired
OR' function with a single pull-up resistor.

Terms
,EE
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EE , ,1 21
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9,1 9 ,1 , 67 
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9
9 287
67 9 67 
, 9
*1' 287
5
*1'

Leadframe (Vbb) is connected to pin 6,12

External RGND optional; single resistor RGND = 150 Ω for reverse battery protection up to the max.
operating voltage.

19) L, if potential at the Output exceeds the OpenLoad detection voltage

Data Sheet 8 V1.1, 2007-05-29

 Smart High-Side Power Switch
BTS5215L

Input circuit (ESD protection), IN1 or IN2 Overvolt. and reverse batt. protection
9
9EE
5
, 5 67
,1 9
=
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(6'=' ,
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,

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9
=

The use of ESD zener diodes as voltage clamp at DC *1'

5 /RDG
conditions is not recommended. 5 *1'

6LJQDO*1' /RDG*1'

Status output, ST1 or ST2

VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω,
9 RST= 15 kΩ, RI= 3.5 kΩ typ.
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
5 6721
67 active

Open-load detection, OUT1 or OUT2

(6'
=' OFF-state diagnostic condition:
*1'
Open Load, if VOUT > 3 V typ.; IN low
ESD-Zener diode: 6.1 V typ., max 0.3 mA; RST(ON) < 375 Ω
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
9
DC conditions is not recommended. EE

5
(;7
Inductive and overvoltage output clamp, 2))
OUT1 or OUT2
9
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VON clamped to VON(CL) = 47 V typ.

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9 9 9 9
EE ,1 67 *1'

Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).

Due to VGND > 0, no VST = low signal available.

Data Sheet 9 V1.1, 2007-05-29

 Smart High-Side Power Switch
BTS5215L

GND disconnect with GND pull up Inductive load switch-off energy


dissipation
( EE

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,1

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352)(7 287
9EE
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67
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352)(7 287
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EE =/

(5
5
Any kind of load. If VGND > VIN - VIN(T+) device stays off /
Due to VGND > 0, no VST = low signal available.
Energy stored in load inductance:
2
Vbb disconnect with energized inductive EL = 1/2·L·I L
load While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
KLJK 9EE
,1
with an approximate solution for RL > 0 Ω:
352)(7 287 IL· L IL·RL
EAS= (V + |VOUT(CL)|)
2·RL bb
OQ(1+ |V )
67 OUT(CL)|
*1'

Maximum allowable load inductance for

a single switch off (one channel)4)
9
EE / I,/Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω

For inductive load currents up to the limits defined by ZL ZL [mH]

(max. ratings and diagram on page 10) each switch is 
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.






     

IL [A]
Data Sheet 10 V1.1, 2007-05-29
 Smart High-Side Power Switch
BTS5215L

Typ. on-state resistance

521 I9EE7M; IL = 2 A, IN = high

RON [mOhm]

7M ƒ&




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Vbb [V]

Typ. standby current

,EERII I7M; Vbb = 9...34 V, IN1,2 = low

Ibb(off) [µA]

















     

Tj [°C]

Data Sheet 11 V1.1, 2007-05-29

 Smart High-Side Power Switch
BTS5215L

Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 to
channel 4

Figure 2b: Switching a lamp:

Figure 1a: Vbb turn on:
,1
,1
,1

9 EE 67

9
287
9
287

9
287

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/

67RSHQGUDLQ
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W

Figure 3a: Turn on into short circuit:

Figure 2a: Switching a resistive load, shut down by overtemperature, restart by cooling
turn-on/off time and slew rate definition:
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,1

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/

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,
/6&U

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off

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,/
W

Heating up of the chip may require several milliseconds, depending

W on external conditions

Data Sheet 12 V1.1, 2007-05-29

 Smart High-Side Power Switch
BTS5215L

Figure 3b: Turn on into short circuit: Figure 5a: Open load: detection in OFF-state, turn
shut down by overtemperature, restart by cooling on/off to open load
(two parallel switched channels 1 and 2) Open load of channel 1; other channels normal
operation
,1
,1

,,
// 9287
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67
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67
—V —V

ST1 and ST2 have to be configured as a 'Wired OR' function

ST1/2 with a single pull-up resistor.
Figure 6a: Status change after, turn on/off to
overtemperature
Figure 4a: Overtemperature: Overtemperature of channel 1; other channels normal
Reset if Tj <Tjt operation

,1
,1

67
67

—V —V

9
287

7
-

Data Sheet 13 V1.1, 2007-05-29

 Smart High-Side Power Switch
BTS5215L

Package Outlines

6.4 ±0.1 1) 7.5 ±0.1 1)

0.1 ±0.05 3)

2.6 MAX.
A B

2.35 ±0.1

0.25 +0.075
8˚ 8˚

.035
(1.55)
2)

-0
0 +0.1

5˚ ±3˚
0.8
C
0.1 1 0.1 C 12x 0.7 ±0.15
Seating Plane
5x 1 = 5 (0.2)

0.4 +0.13 (4.4)

0.25 M CAB
10.3 ±0.3
5.1 ±0.1 0.25 B
1.6 ±0.1

12 7
(1.8)

4.2 ±0.1

4)
ø0.8 x 0.1 -0.05 Depth
1 6
7.8 ±0.1
(Heatslug)

1)
Does not include plastic or metal protrusion of 0.15 max. per side
2)
Stand OFF
3)
Stand OUT
4)
Pin 1 Index Marking; Polish finish
All package corners max. R 0.25

Figure 1 PG-DSO-12-9 (Plastic Dual Small Outline Package) (RoHS-compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order

You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm

Data Sheet 14 V1.1, 2007-05-29

 Smart High-Side Power Switch
BTS5215L

Revision History

Version Date Changes

V1.1 2007-05-29 Creation of the green datasheet.
First page :
Adding the green logo and the AEC qualified
Adding the bullet AEC qualified and the RoHS compliant features
Package page
Modification of the package to be green.

Data Sheet 15 V1.1, 2007-05-29

Edition 2007-05-29
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 5/29/07.
All Rights Reserved.

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The information given in this document shall in no event be regarded as a guarantee of conditions or
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disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.

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