Calculos:

Datos

RL=8Ω

P=10 watt

VCEMAX=45V

ICMAX=1.5ª

PCEMAX=12.5watt

Β=134

Transistor BD135G

Analisis en DC

𝑉𝐶𝐶 − 𝑉𝐶𝐸
𝐼𝐵 =
𝑅𝐵
𝐼𝐶 = 𝛽 ∗ 𝐼𝐵
𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶 ∗ 𝑉𝐶
 𝑃 𝑃 10
𝑃 = 𝑉 ∗ 𝐼 → 𝐼2 = = √ = √ = 1.12 𝐴
𝑅 𝑅 8

1.12
𝐼𝐶 = 1.12 𝐴 → 𝐼𝐶𝑄 = 𝐴 = 0.56𝐴
2
𝑉𝐶𝐶 = 𝐼𝐶 ∗ 𝑅𝐶 = (1.12)(8) = 8.96𝑉 ≈ 9𝑉
𝐼𝐶𝑄 0.56𝐴
𝐼𝐶𝑄 = 𝛽 ∗ 𝐼𝐵 → 𝐼𝐵𝑄 = = = 4.18𝑚𝐴
𝛽 134
𝑉𝐶𝐶 − 𝑉𝐶𝐸 𝑉𝐶𝐶 − 0.7𝑉 9𝑉 − 0.7𝑉
𝐼𝐵 = → 𝑅𝐵 = = = 1.98𝑘Ω
𝑅𝐵 𝐼𝐵𝑄 4.18𝑚𝐴
Resistencias Comerciales:

𝑅𝐵 = 1.8𝑘Ω → 𝐼𝐵𝑄 = 4.61𝑚𝐴

𝑅𝐵 = 2.2𝑘Ω → 𝐼𝐵𝑄 = 3.77𝑚𝐴
𝑉𝐶𝐸𝑄 = 𝑉𝐶𝐶 − 𝐼𝐶 ∗ 𝑅𝐶 = 9 − (0.51)(8) = 4.92𝑉
Análisis AC

𝐼𝐸 = (𝛽 + 1) ∗ 𝐼𝐵 = 0.51𝐴
26𝑚𝑉
𝑟𝑒 = = 0.051 → 𝛽 ∗ 𝑟𝑒 = 6.834
𝐼𝐸
(2.2𝑘)(6.834)
𝑍𝑖 = 𝑅𝐵||𝛽 ∗ 𝑟𝑒 = = 6.812
2.2𝑘 + 6.834
𝑍𝑜 = 𝑅𝑙 = 8Ω
𝑅𝑙 8
∆𝑉 = − = = 156.86
𝑟𝑒 0.051
 1 1
𝐶𝐵 = = = 1.14𝑚𝐹
2 ∗ 𝜋 ∗ 𝑓𝑚𝑖𝑛 ∗ 𝑍𝑖𝑛 2𝜋(20)(6.812)
𝐶𝐵 ≫ 1.14𝑚𝐹 → 𝐶𝐵 = 1000𝜇𝐹
Eficiencia:
𝑃𝑜(𝑐𝑎)
%𝑛 = 𝑥100%
𝑃𝑖(𝑐𝑑)
𝑃𝑖(𝑐𝑑) = 𝑉𝑐𝑐 ∗ 𝐼𝑐𝑞 = (9)(0.56) = 5.04
(4.5)(0.56)
𝑃𝑜(𝑐𝑎) = 𝑉𝑐𝑒(𝑟𝑚𝑠) ∗ 𝐼𝑐(𝑟𝑚𝑠) = = 1.26
2
1.26
%𝑛 = 𝑥100% = 24.88%
5.04