ig the tito ters dor mal ange onof loa due ndas ad 10 = Problems References CCamlaw, H.S., and J.C. Jaeger, Conduction of Heat in Solids, 2nd ed.’ Oxford University Press, London, 1986, Schneider, P.J,, Conduction Heat Transfer, Addison- Wesley, Reading, MA, 1957, Kakac, S.. and Y. Yener, Hear Conduction, Taylor & Francis, Washington, DC, 1993, Poulikakos. D... Conduction Hear Transfer, Prentice-Hall, Englewood Cliffs, NI, 1994 Yovanovich, M. M., "Condi Resistances. (Conductances) mn and Thermal Contact in W. M. Rotsenow, Problems Qualitative Considerati SI Consider a thin eloctical heater atached 10 a plate and tucked by insulation. Initially, the heater and plate are at the temperature of the ambient air, T,. Suddenly, the power to the hoster is activated, yielding a constant heat ux q) (Winx") at the inner surface of the plate. Prat (a) Sketch and label, on Tox coordinates, the temperae ture distributions: intial, steady-state, and at wo inermodiate times. (b) Sketch the heat fux at tbe outer surface gL.) asa function of time. ‘The inner surface of a plane wall is insulated while the cuter surfuve is exposed to an airstream at 7 The wall isat a uniform temperature corresponding t that ofthe sirstream. Suddenly, a radiation heat source is switched ‘on applying a uniform fhex gto the outer surface, agtare> 0 ‘ Insaation~+ — t, Le od (a) Sketch and label, on Tr coordinates, the tempera- ture distributions: intial, steady-state, and at (wo inermediate times. 319 J.P, Hartnett, and Y. 1. Cho, Fds. Handbook of Heat Transfer, MeGraw-Hil, New York, 1998, pp. 31-373, 6. Hirsch, L.R.,R. J. Stafford, J. A. Bankson, S. R. Sershen, B. Rivera, RE. Price, J. D. Harle, N.J. Halas, and JL. West, Proc, Nat. Acad. Sciences of the US. 100, 13549-13554, 2003 7, Cahill, D.G., Rev. Sc. nstram., 61, 802-808, 1990, (b) Skotch he heat fx atthe outer surface of.) 0 fonction of time 5.3 A microwave oven operates onthe principle that applica tion of a high-frequency fcld causes electrically polar= Jed molecules in food 10 oscillate. The net effec is nearly uniform generation of thermal energy within the ood. Consider the process of cooking a sab of beet of thickness 2¢ in a microwave oven and compare it wi cooking in a conventional oven, where euch side of the slab is heated by radiation. In each case the meat is to be heated from 0°C to a minimum temperature of 90°C. ‘ase your comparison on a sketch of the temperature distribution at selected times for each of the cooking processes. In particular, consider the time fy at which heating is initiated, atime t, during the heating process, the time 7, comresponding to the conclusion of heating, ad atime ¢, well into the subsequent cooling process 5A A plate of thickness 22, surfuce area A,, mass M, and specific heat c, initially ata uniform temperature Tis suddenly heated on both surfaces by a convection process (7, fora period of time 1, following which the plate is insulated. Assume thatthe midplane temper- ature doesnot reach within this period of time, (a) Assuming Bis 1 for the heating process, sketch and label, on T-r coordinates, the following tem perature distributions: intial, steady-state (1°) Tx," and at wo imermediate times between fe yand >, (©) Skeich and label, on T-t coordinates, the midplane and exposed surface temperature distributions (©) Repeat pans (a) and (b) assuming BY <1 for the plate. i320 (@) Derive an expression for the steady-state tempera ture Tx, #) = T;, leaving your result in terms of plate parameters (M, c), thermal conditions (T, T= ‘nthe surface temperature TL, 1), and the heating time t, Lumped Capacitance Method ‘SS Steel balls 12 mm in diameter are annealed by heating to T1S0 K and then slowly cooling to 400 K in an air ‘enviroament for which T. = 325 Kand h= 20 Whmn!+K. Assuming the properties ofthe steel w be k= 40 Wrin K, p= 7800 kg/m’, and c = 600 Weg K, estimate the time required forthe cooling process. ‘5.6 Consider the stel balls of Problem 5.5, except nov the air temperature increases with time as T(@) = 325 K+ dar whore a = 0.1875 Ki. (2) Sketch the ball temperature versus time for 0 = 1-= 1h, Also show the ambient temperature, Tin your sraph. Explain special features of te ball tempera ture behavior () Find an expression for the ball temperature as a function of time, 7), and plot the ball temperature for 0 = r= 1h, Was your sketch correct? 45.7 The heat transfer coeicient for ar lowing over a sphere isto be determined by observing the temperatare-time history of a sphere fabricated from pure copper. The sphere, which is 12.7 mm in diameter, is at 66°C before iis inseried into an airstream having a temperature of 27°C. A thermocouple on the outer surface of the sphere indiestes 55°C 69s after ihe sphere is inserted in the airstream. Assume, and then justify, that the sphere behaves as a spacewise isothermal object and caloulate ‘the heat transfor coeiient 5.8 A solid stel sphere (AIST 1010}, 300 mm in diameter, is coated with a dielectric material layer of thickness 2:mm and thermal conductivity 0.04 Wim K. The coated sphere is initially ata uniform temperature of S00°C and i sud- nly quenched in a large oll bath for which T- = 100°C and f~ 3300 Wim?» K. Estimate the time required for the coated sphere temperature tp reach 140°C. Hint Neglect the effect of energy storage in the dielectric ‘material, since its thermal capacitance (pcV) is small ‘compared to that ofthe stcl sphere. [Bile tase plate ofan ron has thickness of = 7 mm and is made from an alumioum alloy (p= 2800 kg/m’, c= 900 fkgK, k= 180 Wim: K, ¢ = 0.80). An elec: trie resistance healer is atached to the inner surface of the plate, while the outer surface is exposed to ambient air and large surroundings st T. = Ty, = 25°C. The acas ‘of both the inner and outer surfaces are, = 0.040 mi Chapter 5 = Transient Conduction Basepate wekeaguay fan approximately uniform heat flux of of = 1.25 10" Wim" is applied to the inner surface of the base plate and the convection coefficient at the outer surface is h= 10 Wis K, estimate the time requieed forthe plate to each a temperature of 135°C. Hin: Numeric integration is suggested in order to solve the problem. 5.10 Carbon steet (AISI 1010) shafts of 0.1-2 diameter ae heat treated in a gas-fied fumace whose gases are at 1200 K and provide a convection eootficient of 100 Wii K. tthe shafts enter the furnace at 300 K, how long must they remain inthe furnace to achieve a centerline tem- perature of 800 K? 5.11 A thermal energy storage unit consists of a large rectan- ‘gular channel, which is weil insulated on its outer sit. face and encloses alternating layers of the storage material and the Bow passage. stage smstetal L4 Each layer ofthe storage material san aluminum sh of width W = 0.05, which sa a ntl temperate of 25°C. Consider conditions for which the storage vit is charged by passing a hor gas through the pasages ‘with the gas temperature andthe convection coefces assumed to have constant values of 7, = 6O0"C and = 100.Win’“K throughout the chanel. Hove long will it take to achieve 75% of the maximum possiblesyle © and Jong, ossible = Problems ‘energy storage? What is the temperature of the alu- ‘minum at this time? $12 Thermal energy storage systems commonly involve a. packed bed of solid spheres, through which a hot gas flows if the system is being charged, ora cold gas ift is being discharged. In a charging process, heat transfer from the hot gas increases thermal energy stored within the eolder spheres; during discharge, the stored energy ecreases as heat is. transferred fom the warmer spheres tothe cooler gas Pace be Consider 3 packed bed of 75-mm-diameter aluminum spheres (p= 2700 kwim’, © = 950 Tkg- K, = 240 Wa K) and a charging process for which gas enters ‘he storage unit ata temperature of T,, = 200°C. Ifthe initial temperature ofthe spheres is 7)= 25°C and the conection coefficient is A= 75 Wim? K, how long does it take a sphere near the inlet of the system to accumulate 90% of the maximum possible thermal ‘nergy’? What isthe corresponding temperature atthe conter of the sphere? Is there any advantage to using ‘copper instead of aluminum? 513A ool used for fabricating semiconductor devices Consists of a chuck (thick metalic, cylindrical disk) ‘on10 which a very thin silicon wafer (p = 2700 kg/m’, 875.Ukg-K, k= 177 Wim+K) is placed by robotic arm. Onee in postion, an electric field in the chuck is energized, creating an electrostatic force thet holds the wafer firmly tothe chuck. To ensure a repeo- ‘neible thermal contact resistance between the chuck and the wafer from eycleso-eycle, pressurized helium 225 is introduced at the center of the chuck and flows (very slowly) radially outward between the asperitos ofthe interface region, Wate, Tt, T= F, = 100% w=0758 mm at Fela aoe arse Intwtaceegon, Chuck, 7, sweaty omega 55 321 ‘An experiment hus bcen performed under conditions for which the wafer, initially at a uniform temperature Ta = 100°C, is suddenly placed on the chuck, Which is ‘a uniform and constant temperature T, = 25°C. With ‘the wafer in place, the electrostatic force and the helium gas flow are applied. After 15 seconds, the tem perature of the wafer is determined to be 33°C. What is the thermal contact resistance R", (m?- K/W) between the wafer and chuck? Will the value of R', increase, ‘decrease or remain the same if ait, instead of helium, is used asthe purge gas? A spherical vessel used a8 «reactor for proucing Pharmaceuticals has a Sommtick stainles ste! wal (= 17 Wim-K) and an inner diameter of D. = Lm Daring production, the vessel fled with estat or which p= (100 kg and c= 2400 kg wile xotbemic reactions eles energy at volume rate of @= 10° W/m’. As first approximations, the reactants ‘may be assumed to be well stived and the Mermal apcitance of the vessel may be need (@) The exterior surface of the vessel is exposed ambiem aie (Z. = 25°0) for which w convection cocflicient of b= 6 Win K muy be assume it the inal tomperatre of the reactants is 25°C, ‘what isthe temperature ofthe reece afer fve hours of process tne? What isthe conesponding tempera atthe outer surtace of he vere? [DE spor the te of varying the convection cet cient on tmsient thermal conditions within the reactor ‘Batch processes ae often used in chemical and pharma: ceutical operations to achieve a desired chemical com Position for the final product end typically involve Uansient heating operation to take the product from room temperature to the desired process temperature. soles tuning (ehh) Std lt TeV. Be \ Pr contin ea) S